CN1459618A - Method of measuring built crystal layer thickness - Google Patents
Method of measuring built crystal layer thickness Download PDFInfo
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- CN1459618A CN1459618A CN02146939.3A CN02146939A CN1459618A CN 1459618 A CN1459618 A CN 1459618A CN 02146939 A CN02146939 A CN 02146939A CN 1459618 A CN1459618 A CN 1459618A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Abstract
A method for measuring the thickness of an epitaxial layer on substrate includes such steps as generating a non-monocrystal layer on substrate, generating an epitaxial layer to be measured to become polycrystal on the non-monocrystal layer, measuring the thicknesses of polycrystal layer and non-crystal layer and the difference between their thickness sum and said epitaxial layer to be measured, and subtracting.
Description
(1) technical field
The relevant a kind of method of measuring built crystal layer thickness of the present invention, the method for measurement built crystal layer thickness on particularly a kind of relevant production line.
(2) background technology
In the processing procedure of semiconductor element, the thickness measure of epitaxial layer is very important on the semiconductor wafer.The method of the thickness of traditional measurement epitaxial layer comprises many methods of interfering the physical optics principle according to infrared ray (Infrared).According to these principles, infrared radiation is on wafer and from the surface of epitaxial layer and epitaxial layer and the reflection of wafer interface.Desire is measured the thickness of place's epitaxial layer on the wafer, is about to the zonule of infrared ray incident beam to this place.This infrared ray incident beam is divided into two folded light beams.One beam reflection is from the surface of epitaxial layer, and another road beam reflection is from epitaxial layer and wafer interface.This twice light beam interferes with each other, and the thickness of epitaxial layer then can be by this through spectral reflectance method or interference technique decision.
The spectral reflectance method is can do periodic change with each wavelength of spectrum according to the optical interference degree of twice folded light beam.Because in the constructive interference and the destruction interference degree of different wave length, these change generation one is row maximum reflection value and minimal reflection value.The method is to come calculated thickness with the two maximum reflection values or the minimal reflection value of measure spectrum reflection.
In the interference technique, be to use interferometer to make two folded light beams produce a conoscope image.Conoscope image comprises central peak (Peak) and the both sides peak value that is produced by the displacement of interferometer reflection mirror.Under desirable condition, interferometer be the degree of symmetry and catoptron displacement between two positions corresponding to the both sides peak value, be to be directly proportional with the thickness of epitaxial layer.But in fact interferometer is asymmetric and must use two fourier transform and other mathematical methods producing desirable conoscope image, by in the conoscope image between the peak value of both sides the catoptron displacement can calculate the thickness of epitaxial layer.
Not excessive epitaxial layer is that identical material and its dopant concentration difference are very little with ground, or the dopant concentration of epitaxial layer is when being lower than the dopant concentration of ground, and Fu Li leaf transformation infrared spectrum (FTIR) method that optical means is for example above-mentioned and other traditional electrical mensurations are no longer suitable as four point measurement rules.
Therefore be necessary very much to propose a kind of novel method of the measurement built crystal layer thickness that can solve the above problems, and method of the present invention is just meeting such demand.
(3) summary of the invention
A purpose of the present invention is for providing a kind of new method of measuring built crystal layer thickness, under the applicable any condition of the method, particularly when epitaxial layer be that identical material and its dopant concentration difference are very little with ground, or the dopant concentration of epitaxial layer is when being lower than the dopant concentration of ground.
It is identical material is measured built crystal layer thickness on production line new method with ground that another object of the present invention is worked as epitaxial layer for proposition is a kind of.
Another purpose of the present invention is for providing a kind of new method of measuring built crystal layer thickness and polycrystal layer and single crystalline layer growth speed ratio.
For realizing above-mentioned purpose, the invention provides a kind of method of measuring built crystal layer thickness, the method of this measurement built crystal layer thickness comprises the following steps: to provide a ground at least, has a non-single crystalline layers on this ground, and wherein this non-single crystalline layers only covers this ground some; Form an epitaxial layer and cover this ground and this non-single crystalline layers, wherein the part that is positioned on this non-single crystalline layers of this epitaxial layer grows up to a polycrystal layer; Measure the thickness of this polycrystal layer and the thickness of this non-single crystalline layers; And measure this polycrystal layer together with the thickness difference between this non-single crystalline layers and this epitaxial layer, the thickness of this epitaxial layer equals this polycrystal layer and deducts this polycrystal layer together with the thickness difference between this non-single crystalline layers and this epitaxial layer together with the gross thickness of this non-single crystalline layers.
Following detailed description only is preferred embodiment and unrestricted.Other equivalences that do not break away from spirit of the present invention change or replace in the claim of the present invention that all should be included in.
(4) description of drawings
In order to allow purpose of the present invention, characteristics and advantage become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is elaborated as follows:
Fig. 1 shows that one has the sectional view of non-single crystalline layers ground thereon; And
Fig. 2 shows that formation one epitaxial layer is covered in the result on the ground shown in Fig. 1.
(5) embodiment
In this mandatory declaration is that fabrication steps described below and structure do not comprise complete processing procedure.The present invention can implement with various integrated circuit manufacture process technology, only mentions at this and understands process technique required for the present invention.
Below will appended diagram be described in detail, and please note that diagram will be simple form and not according to scaling, and size all is beneficial to understand the present invention by exaggerative according to the present invention.
With reference to shown in Figure 1, show a ground 100, have one deck 102 on this ground 100.Ground 100 comprises the semiconductor ground at least, and for example one has＜100〉lattice direction silicon base material, but is not limited to have＜100〉lattice direction silicon base material.The semiconductor substrate that ground 100 also can comprise other is the carbon of similar diamond for example, also can comprise semiconductor substrate such as germanium, gallium arsenide and indium arsenide.Layer 102 comprises a non-single crystalline layers at least, for example a polycrystal layer.Layer 102 can be for example for example a silicon dioxide layer and a silicon nitride layer of polysilicon layer or a dielectric layer of a conductor layer.The thickness of layer 102, extremely preferable between about 200 dusts with about 100 dusts for instance, but also can be thicker or thinner.
With reference to shown in Figure 2, an epitaxial layer 104 forms and is covered on ground 100 and the layer 102.The material of epitaxial layer 104 and ground 100 should be identical.For instance, if ground 100 for to have＜100〉lattice direction silicon base material, epitaxial layer 104 should be to have＜100〉lattice direction crystal silicon layer of heap of stone.Because layer 102 is a for example polycrystal layer of non-single crystalline layers, the part that epitaxial layer 104 is positioned at layer 102 may have grown into a polycrystal layer 106 rather than a single crystalline layer with lattice direction identical with ground.If epitaxial layer 104 is a crystal silicon layer of heap of stone, then polycrystal layer 106 is a polysilicon layer.Common ground 100 a for example silicon base material can be mixed with admixture, and epitaxial layer 104 also can mix the admixture identical with ground simultaneously when deposition.Particularly when epitaxial layer 104 and ground 100 dopant concentration differences dopant concentration very little or epitaxial layer 104 are lower than the dopant concentration of ground 100, the thickness measure of epitaxial layer 104 will be very difficult.
In order to measure the thickness t of epitaxial layer 104
Epi, must know the thickness t of polycrystal layer 106
PolyThickness t A with layer 102.The thickness t of polycrystal layer 106
PolyThickness t with layer 102
ACan get by traditional optical method for measuring.t
PolyWith t
ACan utilize polariscope (Ellisometer) to measure, it is to realize by reflection of shining the laser beam on layer 102 and epitaxial layer 104 and absorption.The polariscope utilization enters the laser beam internal reflection of transparent material or the maximization of absorption is measured.The measurement reflection is from upper surface or pass thickness and the polarity that the outside residual ray intensity that penetrates of upper surface can get film.
The thickness difference t Δ of the gross thickness that layer 102 thickness and epitaxial layer 104 add polycrystal layer 106 can be by a character of surface detection instrument profiling machine (Profiler) for example that with the probe is sniffer.Profiler utilizes atomic force to survey the upright position of its probe, when inswept epitaxial layer 104 of probe and polycrystal layer 106 surfaces, therefore can get t
ΔThe thickness t of epitaxial layer 104
EpiCan calculate by following equation: t
Epi=t
Poly+ t
A-t
ΔSpeed ratio t thus grows up
Poly/ t
EpiAlso can obtain.
Above-mentioned relevant detailed description of the invention only is preferred embodiment and unrestricted.Other equivalences that do not break away from spirit of the present invention change or replace in the scope of patent protection of the present invention that all should be included in.
Claims (10)
1. a method of measuring built crystal layer thickness is characterized in that, comprises the following steps: at least
One ground is provided, has a non-single crystalline layers on this ground, wherein this non-single crystalline layers only covers this ground some;
Form an epitaxial layer and cover this ground and this non-single crystalline layers, wherein the part that is positioned on this non-single crystalline layers of this epitaxial layer grows up to a polycrystal layer;
Measure the thickness of this polycrystal layer and the thickness of this non-single crystalline layers; And
Measure this polycrystal layer together with the thickness difference between this non-single crystalline layers and this epitaxial layer, the thickness of this epitaxial layer equals this polycrystal layer and deducts this polycrystal layer together with the thickness difference between this non-single crystalline layers and this epitaxial layer together with the gross thickness of this non-single crystalline layers.
2. the method for measurement built crystal layer thickness as claimed in claim 1 is characterized in that, this ground comprises a silicon base material at least.
3. the method for measurement built crystal layer thickness as claimed in claim 1 is characterized in that, this ground comprises a gallium arsenide ground at least.
4. the method for measurement built crystal layer thickness as claimed in claim 1 is characterized in that, this non-single crystalline layers comprises a polycrystal layer at least.
5. the method for measurement built crystal layer thickness as claimed in claim 1 is characterized in that, the thickness of this polycrystal layer and the thickness of this non-single crystalline layers are to measure with a polariscope.
6. the method for measurement built crystal layer thickness as claimed in claim 1 is characterized in that, this polycrystal layer is to measure with a profiling machine together with the thickness difference between this non-single crystalline layers and this epitaxial layer.
7. a method of measuring built crystal layer thickness is characterized in that, comprises the following steps: at least
One ground is provided, has a dielectric layer on this ground, wherein, this dielectric layer only covers this ground some;
Form an epitaxial layer and cover this ground and this dielectric layer, wherein, the part that this epitaxial layer is positioned on this dielectric layer grows up to a polycrystal layer;
Measure the thickness of this polycrystal layer and the thickness of this dielectric layer; And
Measure this polycrystal layer together with the thickness difference between this dielectric layer and this epitaxial layer, the thickness of this epitaxial layer equals this polycrystal layer and deducts this polycrystal layer together with the thickness difference between this dielectric layer and this epitaxial layer together with the gross thickness of this dielectric layer.
8. a method of measuring built crystal layer thickness is characterized in that, comprises the following steps: at least
One silicon base material is provided, has a non-single crystalline layers on this silicon base material, wherein, this non-single crystalline layers only covers this silicon base material some;
Form a crystal silicon layer of heap of stone and cover this silicon base material and this non-single crystalline layers, wherein, the part that this crystal silicon layer of heap of stone is positioned on this non-single crystalline layers grows up to a polysilicon layer;
Measure the thickness of this polysilicon layer and the thickness of this non-single crystalline layers; And
Measure this polysilicon layer together with this non-single crystalline layers and should crystal silicon layer of heap of stone between thickness difference, the thickness of this crystal silicon layer of heap of stone equal this polysilicon layer together with the gross thickness of this non-single crystalline layers deduct this polysilicon layer together with this non-single crystalline layers with should crystal silicon layer of heap of stone between thickness difference.
9. the method for measurement built crystal layer thickness as claimed in claim 8 is characterized in that, this non-single crystalline layers comprises a dielectric layer at least.
10. the method for measurement built crystal layer thickness as claimed in claim 8 is characterized in that, this dielectric layer comprises a silicon dioxide layer at least.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33639501P | 2001-10-31 | 2001-10-31 | |
| US60/336,395 | 2001-10-31 | ||
| US10/145,696 US6521470B1 (en) | 2001-10-31 | 2002-05-16 | Method of measuring thickness of epitaxial layer |
| US10/145,696 | 2002-05-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1459618A true CN1459618A (en) | 2003-12-03 |
| CN1205457C CN1205457C (en) | 2005-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02146939.3A Expired - Lifetime CN1205457C (en) | 2001-10-31 | 2002-10-25 | Method of measuring built crystal layer thickness |
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|---|---|
| US (1) | US6521470B1 (en) |
| CN (1) | CN1205457C (en) |
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2002
- 2002-05-16 US US10/145,696 patent/US6521470B1/en not_active Expired - Lifetime
- 2002-10-25 CN CN02146939.3A patent/CN1205457C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1205457C (en) | 2005-06-08 |
| US6521470B1 (en) | 2003-02-18 |
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