CN1459017A - System and method to control radial delta temperature - Google Patents
System and method to control radial delta temperature Download PDFInfo
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- CN1459017A CN1459017A CN 02800595 CN02800595A CN1459017A CN 1459017 A CN1459017 A CN 1459017A CN 02800595 CN02800595 CN 02800595 CN 02800595 A CN02800595 A CN 02800595A CN 1459017 A CN1459017 A CN 1459017A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
- F27D21/0014—Devices for monitoring temperature
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
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- Condensed Matter Physics & Semiconductors (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
A system and method of minimizing stress related to the ramp rate of variable by limiting the ramp rate as a function of the current value of the variable is provided. More specifically, the present invention provides a system and method of maintaining the radial delta temperature of a semiconductor substrate or other heated body below the crystal slip curve by dynamically controlling the temperature ramp rate during processing.
Description
Related application intersection contrast
The application requires to authorize the U.S. Provisional Application of submitting to March 8 calendar year 2001 60/274,532, and the unsettled U.S. Patent application of submitting on February 6th, 2,002 10/068,127, priority, this two document be disclosed in that this is whole in conjunction with as a means of contrast.
The field of the invention
The present invention relates generally to reduce as far as possible with manufacture process during the System and method for of the relevant stress of control variables slope, semiconductor chip or chip temperature during all substrates in this way of this control variables are handled.More particularly, the invention provides a kind of System and method for of reinforcement, wafer radial delta temperature (RDT) is lower than the temperature stress curve that exceeds standard during keeping handling by the slope of controlling temperature during handling.In semi-conductor industry, wish during the temperature cycles of substrate, to obtain the uniformity of temperature.The uniformity of temperature provides substrate uniform technology output, and such as bed thickness, resistivity, and junction depth activate step for temperature and comprise the film deposition, the diffusion of oxide growth and impurity.In addition, in order to prevent " slip " of wafer damage such as bending, generation of defects and chip architecture that thermal stress is brought out, the uniformity of temperature is necessary in the substrate.
Background of the present invention
Make and other treatment system relates generally to change the value of one or more control variables, include but not limited to temperature, pressure, specific gas flow rate, concentration, tension force, voltage, the power that applies, and the position.The rate of change of control variables from the initial value to the end value is the slope or the first derivative of this variable, is commonly referred to as slope.For example, the position is a speed to slope or the first derivative (such as dx/dt) of time.Usually wish to reduce as far as possible the stress that equipment and/or product are subjected in technical process.The stress that exceeds standard may cause technical process to lower efficiency and equipment or the too early inefficacy of product.In many systems, stress is the function of one or more control variables slopes.Slope can be lowered to keep stress to be lower than acceptable threshold value.Yet the slope restriction of unnecessary strictness also is undesirable, the output of technical process because this can slow down.The illustrative example of this notion is from semiconductor processing system.Yet should be noted that the slope relevant with problem is not that the application that goes through is proprietary here.Example only is exemplary just, never is restriction.
In the semiconductor and IC manufacturing aspect important be handling during the semiconductor wafer variations in temperature and the value that are subjected to.Heating and cooling to semiconductor wafer are added with two important restrictions 1) acceleration of temperature slope and slowing down can not occur allowing than wafer thermal inertia faster, and 2) center and the temperature difference between the edge of wafer should keep enough little of to prevent thermal expansion damage wafer.Thermal inertia described material to from steady temperature or zero slope state to limited non-zero slope and turn back to the resistance that moment of stable state jumps again.Actual object temperature slope can not be moment with unlimited " acceleration " and " deceleration ", thereby must heating and cooling under these desirable requirements.The acceleration of temperature and deceleration are the second derivatives of temperature.As for the acceleration and deceleration that are in static quality, the acceleration of temperature and deceleration rate also can not be unlimited.
When in stove from a temperature during to heating of another temperature or cooling, as the semiconductor wafer processing system, it is usually important to reach required temperature set-point in the time quantum of minimum.Stove uses the inclination of Linear Control to change to another temperature set-point from a temperature set-point traditionally.Linear tilt is subjected to the puzzlement of two defectives: postpone to reach to be heated the required temperature slope of substrate; And the temperature of substrate is tended to surpass required set point and vibrate near set point temperatures then before reaching steady temperature.At common unsettled U.S. Patent application S.N.10/068, described in 127 adopt physically accessible temperature slope acceleration and deceleration stage to this way to solve the problem, this article is whole in conjunction with as a means of contrast at this.
Restriction maximum temperature slope other importance is, prevent since in the object excessive internal temperature gradient institute extremely to heated object or the negative fuel factor of a plurality of object.This is special care in the semiconductor wafer processing system, and wherein important manufacture view is variation of temperature and the value that semiconductor wafer is stood during handling.Specifically, the temperature difference during handling in rapid thermal treatment stove or other similar equipment between the center and peripheral of wafer has significant values, because the edge of wafer is with respect to the excessive heating in its center or cool off its possibility of result and cause physics and/or damage chemically, this may make wafer can not use or cause the semiconductor chip initial failure of being made by this wafer.Edge-center temperature difference is called as radial delta temperature, or radial delta-T (RDT).The special influence of this problem is to the batch stove of a pile wafer outward flange heating.With footpath heat source such as resistance heating coil or heating lamp between the period of heating, Waffer edge sometimes may be than high several years of center wafer (even tens degree), because the footpath thermotropism shifts in the Waffer edge maximum.Otherwise during cooling, the edge is subjected to heat loss faster by radially cooling off, thereby can be tangible colder than center wafer.When high temperature, this RDT may bring out the distortion that slides to of crystal in the wafer.
The limit temperature slope is known to reduce the stress-induced advantage that the translation gliding of semiconductor chip is damaged of heat expansion as far as possible.Wish to reduce as far as possible RDT during handling to be reduced in the excessive thermal stress of appearance in the substrate as far as possible.Temperature slope during the processing is the primary factor of decision RDT.Under higher slope, the thermal inertia of heated substrate may be aggravated the variations in temperature between its edge and its center, because the heat that applies to the edge can not be transmitted to the center of substrate immediately.Under lower temperature, can stand bigger RDT not causing under the excessive thermal stress, because silicon atom is stronger and can tolerate bigger thermal stress to the combination of atom at low temperatures.Like this, be desirable to provide a kind of system and method that is used for the whole control of substrate RDT.For fear of surpassing the maximum thermal stress that allows on the wafer, the method for prior art depends on the artificial programmed order of fixed slope.This method has hindered process slope with maximum possible in whole heating or cooling procedure to play a role, because as mentioned above, the actual maximum of avoiding RDT-to bring out thermal stress damage can allow slope to change with temperature.Thereby heat in discrete temperature inclination mode and to have departed from desirable greatest gradient curve.
Thereby need a kind of improved temperature control system and method, so that can control slope as the temperature funtion of object that is heated or cooled or substrate.
General introduction of the present invention
The objective of the invention is to provide a kind of improved system and method, the temperature slope during being used for handling by control limits substrate radial delta temperature when being heated.Specifically, the invention provides by using the dynamically changeable temperature slope to control the system and method for whole substrate radial delta temperature (RDT).In general, temperature slope reduces when the temperature of object increases.More particularly, the invention provides and be controlled in the manufacture process, such as but not limited to semiconductor wafer processing and equipment, the improved System and method for of the radial delta temperature that occurs when substrate is heated.
One embodiment of the present of invention provide the method for the speed that dominated variable is tilted.The maximum that calculates at the current set-point value place of variable variable can allow slope.Before the specification of variables point value that reaches under the next control, the inclination of variable can not can allow slope greater than this maximum.
In another embodiment of the present invention, a kind of method is provided, use a kind of temperature control algorithm to change object temperature the heating cavity be contained in temperature controlling stove to end temp from the beginning temperature.Temperature data and temperature set points from one or more temperature-detecting devices in the heating cavity are provided, and as the input to temperature control algorithm, the power of this control algolithm control one or more controlled heating element heaters in stove transmits.But function calculation maximum allowable temperature slope as set point temperatures.Temperature set-point is accelerated with limited rate of acceleration from the beginning temperature, but up to reaching the maximum allowable temperature slope that is calculated for the Current Temperatures set point.Temperature set-point is decelerated with limited deceleration, up to reaching end temp, makes the temperature of object reach the temperature of end setup point smoothly, and is no more than end temp or vibration in its vicinity basically.
Another embodiment of the present invention provides a kind of stove, and this stove changes the temperature of object in the stove according to the method for above general introduction.
These methods are applicable to the system of the accurate control procedure variable of various needs, and these process variables are such as temperature set-point, specific gas flow rate, concentration, pressure, tension force, voltage, power that applies and position etc.In one exemplary embodiment, system and method for the present invention is implemented at the multizone stove that is used for semiconductor processes.
Brief description of drawings
Reading detailed description of the present invention and the following claims that provide and during with reference to accompanying drawing, gas purpose of the present invention and advantage will be apparent, wherein:
Fig. 1 is the schematic diagram of an example of the employed stove that adopts system and method for the present invention in the semiconductor manufacturing.
Fig. 2 is for the maximum radial delta temperature of the silicon chip that is obtained from equation 1 curve map to wafer edge temperature.
Fig. 3 is the flow chart of an embodiment of expression method of the present invention.
Fig. 4 is an image, expression: (i) set point of Qing Xieing reaches (ii) the weighted average for the chip temperature of All Ranges.
Fig. 5 is an image, expression: (i) for the center and peripheral temperature of the reality of All Ranges; (ii) for the RDT value of All Ranges; And (iii) according to one embodiment of present invention for the power of each regional stove to time relation.
Fig. 6 is an image, expression: (i) weighted average of center and peripheral (2/3 edge+1/3 center) temperature on the semiconductor-based wafer, and this is used as the temperature of expression entire wafer usually; The (ii) RDT value of All Ranges; And (iii) according to one embodiment of present invention for the power of each regional stove to time relation.
Fig. 7 is an image: (i) the top closure of expression chip temperature curve shown in Figure 5 reaches the weighted average that (ii) shows according to one embodiment of present invention All Ranges.
Fig. 8 is an image, the expression: (i) for All Ranges for 5,10,15,7 and 20 the degree Cmin
-1Temperature slope actual wafer center and lip temperature; (ii) for the RDT value of each zone for each slope; (iii) for the inclination that does not have RDT control method of the present invention for each each slope stove power of zone to the relation of reality.
Detailed description of the present invention
As mentioned above, desirable is radial delta temperature or the RDT that reduces semiconductor chip for example or the whole object of wafer as far as possible, to avoid occurring excessive thermal stress or crystal " slip " on the object.The greatest gradient that method of the present invention also can generally be used for needs restrictions control variables is with any process of the stress that reduces system as far as possible.According to one embodiment of present invention, keep RDT to be under the excessive temperature pressure curve by the control temperature slope.It is the function of temperature that this maximum can allow temperature pressure curve.But varying with temperature, regulation maximum temperature slope of the present invention keep excessive temperature pressure curve to be lower than maximum permissible value for heated object Current Temperatures.
Such as objects such as semiconductor wafers at a lower temperature than it under higher temperature, the damage of the excessive thermal stress that the less RDT of being subjected to brings out.Because the temperature slope in the stove (shown in figure) is the main driving factors of decision RDT, but thereby limit maximum allowable temperature slope, the RDT on the object that just is being heated or cooled in the control stove by function as Current Temperatures in the stove.Allow slope bigger at a lower temperature.Reduce this slope gradually with the rising of temperature.Temperature slope this reduces gradually and produced level and smooth basically as the function of time, continuous temperature curve.Like this, the present invention provides maximum allowable temperature slope for variable.By such control slope and RDT, the present invention has reduced to make object can not cause the time quantum of substrate overstress or damage to another temperature tilt variation from a temperature as far as possible.
In one embodiment of the invention, provide a kind of method, be used for limiting control variables-present embodiment and be temperature-increase or the greatest gradient of minimizing.The present invention also implements on semiconductor stove as shown in Figure 1.Stove among Fig. 1 comprises the heating element 12 with five zones that separate 14, holds the heating cavity 16 of one or more semiconductor-based wafer 20.Power command or signal 22 are controlled in each zone 14 respectively.The purpose of heating element 12 is that heated chip 20 is to required temperature 24.Temperature controller 26 with temperature control software 30 and process control software 32 is to furnace heater element 12 transmitted power command signals 22.Though shown is the specific semiconductor stove 10 with five zones 14, but those skilled in the art are to be understood that, system and method of the present invention can adopt in the stove of other type, and and then can be at the semiconductor equipment of other type, or design is used for implementing to another set point temperatures controllably changes the miscellaneous equipment of object or object temperature from a set point temperatures.Specific examples shown in the invention is not restricted to.For example, the present invention can be used for having the stove in different numbers zone.Similarly, the present invention can be used for other process or system, and slope that wherein can be by the restriction control variables is as the function of this variable and proof stress.In addition, this method can be used to slope by limiting one or more variablees as the function of these one or more variablees and proof stress.
In one embodiment of the invention, temperature controller 26 comprise temperature control software 30 such as, for example be configured to keep the RDT control software of the control of stove 10.The tilt variation of set point depends on temperature and final set point, and is crooked during tilting.More particularly, slope is the inclination of set point temperatures.Can tolerate higher RDT down and not have the thermal expansion damage than the temperature (such as about 600 ℃ to 1200 ℃) that raises because semiconductor chip (generally is lower than 600 ℃) under lower temperature, the present invention is configured to begin to make set point to tilt quickly when temperature is low relatively.When temperature rose, maximum can tolerate RDT and reduce, and slope slows down when temperature increases like this.The temperature of substrate or wafer is high more, and employed slope is slow more.The present invention dynamically changes greatest gradient as current set point temperatures.This greatest gradient can be from allowing the look-up table of RDT as the maximum of the function of temperature, or other provides greatest gradient to derive as the function that is programmed of temperature funtion from some.An example of this look-up table is provided in table 1.In the temperature of making between the value of table, allow RDT to carry out interpolation to maximum, so that smooth change is as the maximum permission RDT of the function of temperature.The calibration factor that experiment is determined is used for allowing maximum RDT to be converted to the maximum temperature slope.This calibration factor may be constant or itself also may be the function of temperature.Be lower than the wafer of 300mm, the calibration factor is preferably 0.5 ℃ of every ℃ of per minute of RDTD.Can use different slope tables, thereby realize that software of the present invention preferably is configured to allow these slope tables can select in process is allocated.In addition, the relation between temperature and the greatest gradient can be programmed to the mathematical function of a series of one or more temperature.It is predetermined by experiment to temperature funtion that maximum can allow slope, and this experiment produces following equation for maximum Δ T as temperature funtion:
F ε/ft strain rate wherein, E is yang type modulus (E=1.9 * 10
11Nm
-2), α is the thermal coefficient of expansion of substrate (being silicon under this situation), C and n are numerical constant (C=4.5 * 10
4Nm
-2And n=2.9), k is Boltzmann constant (k=1.38 * 10
-23JK
-1), T is the absolute temperature of substrate edge, supposes that thermal gradient is the highest here.This equation and radius are irrelevant, so can be used for the substrate of virtually any size.The maximum Δ T of this calculating the results are shown in Fig. 2.
Table 1: greatest gradient look-up table
| Temperature set-point, ℃ | The maximum RDT that allows, ℃ |
| ????600 | ??80 |
| ????700 | ??60 |
| ????800 | ??44 |
| ????900 | ??34 |
| ????1000 | ??26 |
| ????1100 | ??22 |
| ????1200 | ??18 |
More particularly, method of the present invention embodiment is shown in Fig. 3.Fig. 3 is the flow chart of an embodiment of expression method of the present invention.The step 40 of this method beginning and in step 42 inquiry of tilting.If be judged to be not, then use previous set point in step 44.Be then to inquire about to see whether be the time that begins the slope deceleration if be judged to be in step 46.If being judged to be of step 46 be, then this method is calculated the rate of deceleration in step 48.If being judged to be not of step 46, whether then this algorithm checks slope is current slows down.If slow down, then calculate set point based on this rate of deceleration, and this method is finished (step 54) in step 32 at step 50 slope.If find that in step 50 slope does not slow down, then consult by table and in case of necessity interpolation is determined the maximum RDT of Current Temperatures in step 56.And, consult the maximum RDT value of returning from table and use the calibration factor to be converted into greatest gradient in step 56.
Then, inquire about in step 58 and see whether slope is lower than greatest gradient.If not, then use greatest gradient to calculate new set point in step 60.If then quicken slope and trend towards greatest gradient in step 62.
Illustrate an exemplary realization of result curve set point among Fig. 4.In fact this embodiment of the present invention can realize by following concept nature step: but calculate maximum allowable temperature slope as mentioned above for current set point temperatures, and make set point temperatures can allow the gradient of slope to tilt to be no more than this maximum.
The further embodiment according to the present invention, all temperature set-points are bending, make when increasing or quicken slope from zero to greatest gradient in the temperature of beginning, and reduce or deceleration slope when turning back to zero from greatest gradient in the temperature that finishes then, in the stable state (zero slope) of heating or cooling procedure and provide level and smooth transition between the inclination stage.Be accelerated to maximum with limited physically accessible speed slope, and decelerate to final set point downwards, so that reduce of the vibration of actual object temperature as far as possible with respect to set point temperatures.In a preferred embodiment of the present invention, quicken and the rate of deceleration (temperature set-point is a constant about the second dervative of time) acceleration and the inclination of deceleration temperature with linearity.Yet, preferably hair line deceleration under certain conditions.
Present to the set point slope of temperature controller and follow following smaller: a) can allow the slope temperature curve to the form of temperature and the maximum of the dynamic acquisition of the calibration factor from RDT for current set point temperatures, b) slope that provides by setpoint profile, and c) pass through the accessible greatest gradient of stove near final set point up to set point temperatures.The smoothed deceleration of set point slope is to satisfy final end temp then.This method of the present invention carries out the transition to required temperature with the fastest possible speed that can keep RDT to be lower than the slip curve with wafer.
In this embodiment, preferably use two groups of thermocouples to carry out temperature survey as shown in Figure 1: one or more pulse signal thermocouples 34 and one or more profile thermocouple 36.Pulse signal thermocouple 34 is near heating element winding (not shown), and faster response control input.Profile thermocouple 36 can be represented its temperature so better near wafer 20.Temperature controller 26 with temperature control software 30 receives required temperature 24 set points from the process controller 32 with process control software, and reads the measured temperature 38 of thermocouple.Be combined on dut temperature 38 mathematics to produce control temperature (not shown), this provides a kind of estimation to wafer 20 temperature.The control temperature is preferably by the weighted average of pulse signal thermocouple 34 with the temperature of profile thermocouple 36 measurements.Weighting makes that preferably as the function of temperature and change pulse signal thermocouple 34 temperature weights are stronger when high temperature.In another preferred embodiment, the mathematical combination of dut temperature 38 also comprises one or more temperature offset amount.These side-play amounts can be static state or dynamic.In an example, poor between the temperature of heated wafer or other object and the electric thermo-couple temperature adopts the static shift amount to proofread and correct the control temperature.Can use the wafer that thermocouple is housed to determine these side-play amounts in the mode of experiment.Based on the control of control algolithm and input and set point temperatures, temperature controller 26 is determined the quantity of power that apply to each zone of furnace heater element 12.
When having stipulated slope, set point will tilt with selected speed.In a preferred embodiment, the set point smooth curved is near the final set point the set point end in inclination stage.During final set point bending, slope is linear to slow down at set point.The end that this bending of the temperature set-point that is programmed is preferably in inclination adopts.Yet this beginning that also is advantageously used in inclination is to avoid the big vibration of power demand.
When tilting at maximum temperature slope place under the method for the present invention, the transient temperature set point be not resemble common employing such as PID system equitemperature controller, jump to final set point immediately.But quicken set point with limited physically accessible speed, up to or reach maximum accessible slope for this zone and set point, perhaps reach the maximum that obtains from allowing the product of the RDT and the calibration factor for current set point temperatures maximum for Current Temperatures and can allow slope from table 1.From the product of radial delta-T, but obtain maximum allowable temperature slope in real time as the function of current set point temperatures to the temperature funtion and the calibration factor.RDT is to provide as mathematical relationship or in the look-up table described in the last embodiment to the function of temperature.If the temperature place maximum that use look-up table, software are configured to not provide for the value of tabling look-up can allow RDT to carry out interpolation.Be used for that can to allow the calibration factor of slope can be constant can allow RDT to be converted to maximum as temperature funtion in given temperature place maximum, or itself also can be the function of temperature.
A kind of system also is provided in another embodiment, and method wherein of the present invention is used for controlling the slope of set point temperatures in the temperature control stove.
A kind of system is provided in another embodiment, the temperature-controlled process combination described in method wherein of the present invention and the common unsettled U.S. Patent application 10/068,127, this is opened in this whole combination as a means of contrast.
Experiment
Experiment is similar to stove shown in Figure 1 and adopts the wafer (having the thermocouple semiconductor wafer that the different zone of wafer is provided the embedding of temperature data) that thermocouple is housed, and has carried out several tests with regard to system and method for the present invention.Fig. 4 to 7 illustrates the chip temperature data and the stove power that thermocouple are housed for exemplary experiment and provides, and wherein temperature slope is quickened by linearity and slows down, and greatest gradient is controlled to keep RDT to be in maximum can to allow under the temperature pressure curve.The wafer that thermocouple is housed under these conditions is heated to 950 ℃ from 600 ℃.Fig. 5 is the curve map of the data of collecting in this experiment, expression: (i) for the center and peripheral temperature of the reality of All Ranges; (ii) for the RDT value of All Ranges; And (iii) for each regional stove power to time relation.It is average that Fig. 6 (i) illustrates the weighting (2/3 edge+1/3 center) of center and peripheral temperature on the wafer that thermocouple is housed in this experiment, and Fig. 7 illustrates the closure at the top of Fig. 5 medium dip, and for the weighted average of All Ranges.
In another experiment, system and method for the present invention carries out vertical fast the processing in (RVP) type stove that has five zones as shown in Figure 1.Fig. 4 illustrates the set point of inclination, adds for the tested chip temperature weighted average of All Ranges.This curve map has showed how actual chip temperature tilts consistent with temperature set-point well.
Fig. 8 illustrates the result that slope is not tested by the linear tilt of the present invention's control.Except being bent at the top that tilts, set point is by linear tilt.Fig. 8 illustrates for the center wafer of following slope All Ranges reality and the temperature at edge: 5,10,15 and 20 degree C min
-1The part of Fig. 8 (ii) illustrates RDT for wafer, and part (iii) illustrates the power that applies as the function of time.As shown in Figure 8, under the situation of not controlling, increase slope and cause than viewed situation in the Figure 4 and 5 that adopt method of the present invention tempestuously greater than the RDT value based on the RDT slope.
System and method of the present invention provides required performance.The description of above specific embodiment of the present invention and example only is that though by above certain example the present invention has been carried out the example explanation, this should not be interpreted as being restricted to this for the purpose of example and explanation.They are not to want limit or limit the invention to disclosed precise forms, and obviously many remodeling can be arranged according to the above, embodiment and distortion.Scope of the present invention be as here disclosed and comprise by claims and equivalent thereof the field.
Claims (13)
1. a kind of method of dominated variable slope may further comprise the steps:
Calculate described variable and can allow slope in the maximum of the described variable of currency; And
Limit the slope that described variable is tilted, make it be no more than the described maximum slope that allows.
2. the process of claim 1 wherein that described variable is the set point temperatures of just heated object.
3. the method for claim 2, wherein said just heated object is one or more semiconductor chips.
4. the method for claim 3, it is the function of current temperature maximum radial delta temperature on the wafer that wherein said maximum can allow slope.
5. use the temperature control algorithm to change a kind of method that is contained in object temperature in the temperature control stove heating cavity to end temp, may further comprise the steps from the beginning temperature:
Provide temperature data from one or more temperature-detecting devices described heating cavity and a temperature set-point, as input to described temperature control algorithm, this algorithm control one or more power supplies of controlling heating element heater in described stove;
But calculating is as the maximum allowable temperature slope of temperature funtion;
Quicken described temperature set-point with limited rate of acceleration from described beginning temperature, but up to reach described maximum allowable temperature slope for the Current Temperatures set-point value till; And
With the limited rate of deceleration described temperature set-point that slows down, up to reaching described end temp, make the temperature of described object smoothly reach described end setup point temperature, and be no more than described end temp or vibration in its vicinity basically.
6. according to the method for claim 5, wherein saidly control the group selection of heating element heater from forming by radiation heating lamp and heater coil.
7. according to the method for claim 5, wherein said temperature-detecting device is one or more thermocouples, provides one or more temperature to described one or more heating element heaters of controlling.
8. according to the method for claim 7, are inputs wherein to described temperature control algorithm as the control temperature of the mathematical combination of described one or more electric thermo-couple temperatures.
9. method has according to Claim 8 wherein also been stipulated to have from the known skew of described electric thermo-couple temperature to described control temperature.
10. according to the method for claim 9, wherein said temperature drift is a static shift, and it proofreaies and correct described control temperature for the temperature of described object and the difference between the described electric thermo-couple temperature.
11. according to the method for claim 5, wherein said object is a semiconductor chip.
12. a temperature control stove that is used to change object temperature comprises:
Hold one or more heating element heaters of controlling, and the heating cavity of one or more temperature-detecting devices; And
Be configured to the temperature controller of the method for enforcement of rights requirement 1.
13. a temperature control stove that is used to change object temperature comprises:
Hold one or more heating element heaters of controlling, and the heating cavity of one or more temperature-detecting devices; And
Be configured to the temperature controller of the method for enforcement of rights requirement 5.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27453201P | 2001-03-08 | 2001-03-08 | |
| US60/274,532 | 2001-03-08 | ||
| US10/068,127 | 2002-02-06 | ||
| US10/068,127 US6901317B2 (en) | 2001-02-06 | 2002-02-06 | Inertial temperature control system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1459017A true CN1459017A (en) | 2003-11-26 |
Family
ID=26748605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02800595 Pending CN1459017A (en) | 2001-03-08 | 2002-03-08 | System and method to control radial delta temperature |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1328966A4 (en) |
| JP (1) | JP2004519855A (en) |
| CN (1) | CN1459017A (en) |
| AU (1) | AU2002242327A1 (en) |
| WO (1) | WO2002073660A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
| US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063518A (en) * | 1989-11-16 | 1991-11-05 | Grumman Aerospace Corporation | Alarm system for a crystal growing furnace |
| US5044943A (en) * | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
| US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
| US6133550A (en) * | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| US5963840A (en) * | 1996-11-13 | 1999-10-05 | Applied Materials, Inc. | Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions |
| JP2002515648A (en) * | 1998-05-11 | 2002-05-28 | セミトゥール・インコーポレイテッド | Heating reactor temperature control system |
| US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
| US6294394B1 (en) * | 1999-07-01 | 2001-09-25 | Voyan Technology | Ramp rate limiter to control stress during ramping |
| US6350964B1 (en) * | 2000-11-09 | 2002-02-26 | Applied Materials, Inc. | Power distribution printed circuit board for a semiconductor processing system |
-
2002
- 2002-03-08 WO PCT/US2002/007034 patent/WO2002073660A2/en not_active Application Discontinuation
- 2002-03-08 AU AU2002242327A patent/AU2002242327A1/en not_active Abandoned
- 2002-03-08 EP EP02707964A patent/EP1328966A4/en not_active Withdrawn
- 2002-03-08 CN CN 02800595 patent/CN1459017A/en active Pending
- 2002-03-08 JP JP2002572612A patent/JP2004519855A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004519855A (en) | 2004-07-02 |
| EP1328966A2 (en) | 2003-07-23 |
| WO2002073660A3 (en) | 2003-02-13 |
| WO2002073660A2 (en) | 2002-09-19 |
| EP1328966A4 (en) | 2006-08-30 |
| AU2002242327A1 (en) | 2002-09-24 |
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