CN1456923A - Piezo driven F-P chamber tunable optical filters and manufacture thereof - Google Patents
Piezo driven F-P chamber tunable optical filters and manufacture thereof Download PDFInfo
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Abstract
In the method, the piezoelectric driving mode is combined with an advantage of quantized production for MEMS and the special structuval design for barrier block is applied to ensure the parallelism of two parallel mirror face in cavity for decreasing difficulties in assembly. The provided Fabry-Perot cavity is composed of decompositve two pieces of piezoelectric blocks, a high-reflecting film at up and a high-reflecting film at bottom, of which the high-reflecting film at up can be planar or concave shape or can be spherical surface or cylindrical surface of concave shape or their similar in order to form resonant cavity in plannar shape or "plannar-concave" shape separately.
Description
Technical field
The present invention relates to a kind of novel Fabry-Perot cavity (Fabry-Perot of technical field, hereinafter to be referred as FP) tunable optical filter spare, or rather, the present invention relates to a kind of Piezoelectric Driving FP chamber tunable optical filter spare and method for making, belong to the micro mechanical structure field.
Background technology
Growth at full speed along with the global traffic amount, the market active demand can be transmitted information, intelligent optical communication system at a high speed, in a large number, and the tunable optical filter of function admirable is the core component of wavelength-division multiplex in the optical communication system (WDM), dense wave division multipurpose (DWDM), OADM module (OADM), optical cross connection (OXC), optical property monitor (OPM), tunable optical transceiver key equipments such as (Tunable Optical Transceiver).The FP chamber has been widely used in aspects such as spectral fine structure analysis, laser resonant cavity, optical filter as a kind of important multiple-beam interference structure.Caused the great attention of world scientific research personnel and photoelectronic industry circle with its excellent comprehensive performance based on the adjustable filter of FP interferometer principle.
Optical fiber FP filter structure is adopted in the FP adjustable optical filtering that has come into the market usually, this structure utilizes fiber end face as the high reflection mirror face, outside optical fiber, adhere to the piezoelectricity drawing mechanism, axial spacing by flexible change two fiber end faces of piezoelectric after powering up, and then the chamber that changes FP is long, thereby realize adjustable filtering (Clayton et al.United States Patent5,073,004; Stephen R.Mallinson, Applied Optics, 430-436, Vol.26, No.3,1February1987; J.Stone, ElectronicLetter, 504-505, Vol.21, No.11,23rd, May, 1985).This scheme advantage is to reach hundreds of and even thousands of fineness, and tuned speed is a Millisecond, dependable performance, good reproducibility.Shortcoming is the depth of parallelism that needs meticulous adjusting optical fiber radial missing and two fiber end faces, the cost of manufacture height, and device volume is bigger than normal, adopts assembly technology in a large number, is difficult to the process compatible with IC, is unfavorable for other photoelectric device integratedly, is unfavorable for mass production.
Utilize the FP adjustable filter of MEMS fabrication techniques to cause the extensive attention of all circles as a kind of new scheme.It produces FP cavity and static driven mechanism by micro mechanical technology in a very little space, regulate the depth of parallelism of FP two minute surfaces and change the spacing of two minute surfaces and then change the chamber long by electrostatic force.MEMS adjustable filter tuned speed is fast, can reach inferior millisecond and even microsecond magnitude, and manufacture craft is with the IC process compatible, can large-scale production, and be a kind of selection that has competitive power.But this scheme generally adopts surface treatment (A.Spisser, etc.IEEE Photon.Technol.Lett., vol.10, pp.1259-1261, Sept.1998; A.T.T.D.Tran, etc.IEEE Photon.Technol.Lett., vol.8, pp.393-395, Sept.1996) or body silicon bonding technology (J.S.Harper, etc.Electronics Letters, Vol.25, No.16,3rd August 1989; J.H.Jerman, etc.Sensors and Actuators A, vol.29, pp151-158,1991) make, complex process, yield rate is lower, and device performance is subjected to the external environment factor, as temperature, humidity, vibration etc., influence greatlyyer, its reliability also needs further check.Though existing in the market indivedual companies are at the adjustable filter of selling this type, high because of price eventually, can not suit provides in enormous quantities.Actual requirement apart from optical communication market also has certain gap.
Summary of the invention
The object of the invention is to provide the structural design and the method for making of a kind of FP chamber tunable optical filter spare.It is that the stability of the Piezoelectric Driving mode advantage with the MEMS batch machining is combined, and adopts special stopper structural design to guarantee the depth of parallelism of cavity two parallel minute surfaces, has reduced assembly difficulty, thereby guarantees device performance.The design adopts bulk silicon technological, and is simple in structure, with low cost, do not have thin beam etc. to be subject to the parts of ectocine, and volume is little, is easy to making in enormous quantities.The design has extremely strong technological feasibility, and device reliability is secure, and excellent performance will play a significant role in optical communication system and field of optoelectronic devices.
The structural unit of the FP tunable optical filter of a kind of Piezoelectric Driving provided by the invention is characterised in that it is to be combined closely and formed by A, B, three parts of C, as shown in Figure 1.A can be silicon body, glass or other is easy to the body material of micromachined, and B is the piezoelectrics material, and C is soi wafer or common silicon chip.Wherein:
(1) last silicon body 1 is arranged on the A, last anti-reflection film 2, last high-reflecting film 3, left end electrode of metal 4, right-hand member electrode of metal 5 be totally five parts.According to the different process process, last silicon body 1, left end electrode of metal 4, right-hand member electrode of metal 5 can mutual conduction, also can mutually insulated.
(2) B has identical and about two of separating lay respectively at, piezoelectrics 6 is arranged on each piece, piezoelectrics upper strata metal 7, and piezoelectrics lower metal 8, and be used for five parts such as the bonding upper glue layer 9 of same A, C part, lower glue layer 10.The FP cavity by high-reflecting film 3 on two piezoelectric blocks, that separate and once high-reflecting film 13 constitute.
(3) six parts such as end silicon layer 11, high platform 12, following high-reflecting film 13, following anti-reflection film 14, left end metal bottom electrode 15, right-hand member metal bottom electrode 16 are arranged on the C, in manufacturing process, also can produce stopper 17 on the C, make the back stopper 17 that finishes at last and be removed.High platform 12 is positioned at the central authorities of C in Y direction.
Its basic functional principle is: the stock (as silicon or glass etc.) that constitutes A, C two parts is to the light in certain wavelength coverage transparent (as 1.3 microns current in the optical communication and 1.55 microns infrared light), two planes of A, C two part evaporation high-reflecting films are parallel to each other, constitute a FP chamber, by outer, chamber Z axle, in some cases, can depart from the concrete angle of Z axle, the light of incident is repeatedly reflection between the two highly reflecting films minute surfaces in FP chamber, carries out multiple-beam interference.The energy transmissive of having only certain wavelength at last in like manner, also has only the luminous energy of certain wavelength to be reflected back to the device other end, can accept specific wavelength transmitted light or reflected light with optical fibre device in the relevant position, thereby reach the function of optically filtering.Under the constant situation of other condition, the wavelength of transmission (or reflection) lives forever in funtcional relationship with the chamber in FP chamber.Top electrode 4 or 5 and bottom electrode 15 or 16 between add voltage, then electrostrictive effect can take place in piezoelectrics 6 under the effect of electric field of Z-direction, thereby drive last silicon body 1 attached thereto and relative Z axial displacement takes place with Gao Tai 12, thereby the chamber that has changed the FP chamber is long, has finally changed the centre wavelength of the light wave of transmission (or reflection).There is fixing funtcional relationship in the piezoelectrics collapsing length with applying between the magnitude of voltage.Realized thus finally having realized the function of adjustable filter with electric signal tuning to light filtering centre wavelength.
Piezoelectric Driving FP provided by the invention chamber is tunable optical filter spare preparation technology sketch down:
(1) preparation of A part, as shown in Figure 2.Mating plate can be silicon chip or glass shown in Fig. 2 (a).Useful dry etching or corroding method are made the break-through groove of some along X-direction.The main effect of this break-through groove is when the evaporation metal electrode, metal can be steamed in the side of groove, thereby the metal electrode on anti-reflection film on the correspondence 2 and the last high-reflecting film 3 can be linked up, the break-through groove can also cause A part in the length of Y direction less than the length of C part in Y direction, thereby can directly metal lead wire be drawn from bottom electrode 14 or 15, as shown in Figure 6.After the break-through groove performs, long good anti-reflection film and high-reflecting film on respective face.After protecting area with gluing or other method,,, can finish the preparation of A part again with the metal-stripping of not wanting steaming metal (can be gold, aluminium or other can do the metal of electrode) with perpendicular two surfaces of Z axle in order to logical light.
(2) B partly prepares.Piezoelectrics are laminated, and thickness is the length of piezoelectrics 6 in Z-direction, and two surfaces should be parallel as far as possible up and down, two surfaces are steamed and are gone up metal, polarize, cut into rectangular (shown in B among Fig. 4 (a)) again, rectangular width is the length of piezoelectrics 6 in the Y-axis defence line.
(3) preparation of C part.As shown in Figure 3.Fig. 3 (a) is unprocessed soi wafer; make stopper 17 with etching or corroding method in the above; shown in Fig. 3 (b), because the middle protect oxide layer of soi wafer is arranged, so the height of the stopper of producing 17 is the thickness that its length in Z-direction is the soi wafer top layer silicon.Also can utilize common silicon chip to corrode or etch the stopper 17 of certain depth earlier, produce structures such as high platform 12 and bottom silicon 11 again.Also can utilize selective epitaxial growth process extension on common silicon chip to go out the stopper 17 of certain altitude, produce structures such as high platform 12 box bottom silicon 11 again.Behind the figure, again it is carried out photoetching shown in oxidation Fig. 3 (b), etching or erode away high platform 12 and bottom silicon 11.Shown in Fig. 3 (c).The gained figure is removed monox, high-reflecting film 13 and following anti-reflection film 14 about the respective table face length, C partly makes to accuse and finishes.
(4) assembling.As shown in Figure 4.Fig. 4 (a) is assembling preceding A, B, C three part relative orientations.Fig. 4 (b) is the whole slice, thin piece synoptic diagram after assembling.Respectively there is this moment adhesive gum special to exist between B and A, the C, can solidifies at a certain temperature.When solidifying, apply inwards pressure in Z-direction, glue 9 and 10 all is extruded, but because the existence of stopper 17 is arranged, the Z axial spacing of last high-reflecting film 3 and following high-reflecting film 13 is fixed in the height of stopper.Because the height of each stopper is decided by the thickness of SOI top layer silicon, high conformity.And when with common silicon chip, the height of stopper is decided by the degree of depth of burn into etching or the height of selective epitaxial growth.Above technology has guaranteed the depth of parallelism of two-supremes mirror surface preferably.
(5) scribing is cut apart.Treat after glue 9 and 10 full solidification, Fig. 4 (b) figure is divided into earlier rectangularly, along Y direction each rectangularly is divided into the individual unit as Fig. 1 again along the break-through groove on the A.If former sizes such as A, C are 4 inches, then can make hundreds of and even thousands of separate units, really realized batch process.
(6) draw electrode, as shown in Figure 6.Fig. 6 (a) is a front view, and Fig. 6 (b) is an oblique view.
The effect signal of stopper 17: as shown in Figure 5, if two height at a distance of nearest stopper are respectively h1, h2, horizontal spacing is L, then A, C compress mutually that angle theta is between the two-supremes anti-membrane plane of back | the h2-h1|/L radian, | h2-h1| generally can reach 1 micron and even lower by the decision of soi wafer manufacture craft, L is if get the radius of four inches slice, thin pieces, be 50.8mm, then angle theta can reach 0.00002 radian, and promptly 4 " about.
The effect of four electrical leads 18,19,20,21: the insulation mutually of each lead-in wire, can be with 18 and 19 altogether, the available circuit design is preset certain voltage 20 or 21 in advance, can further regulate the depth of parallelism of two parallel minute surfaces.And then further simultaneously apply extra voltage 20,21 according to the needs of filtering, can carry out high performance adjustable filtering.In like manner, also can on 18 and 19, apply voltage with 20 or 21 altogether.
Piezoelectric Driving FP provided by the invention chamber tunable optical filter, except that top described structure, also having upward, high-reflecting film 3 is not plane but makes a recessed cylinder, sphere or approximate cylinder, sphere 22 in the central, constitute " plano-concave " FP resonator cavity, promptly one is the plane, and another is cylinder, sphere or approximate cylinder, sphere.
This structure basic functional principle is: constitute A, the stock (as silicon or glass etc.) of C two parts is to the light in certain wavelength coverage transparent (as 1.3 microns current in the optical communication and 1.55 microns infrared light), A, one in two faces of C two part evaporation high-reflecting films are the plane, one is cylinder or sphere, the normal direction of cylinder or sphere is vertical with another plane, constitute " plano-concave " FP resonator cavity, by outer, chamber Z axle, in some cases, can depart from Z axle certain angle, the light of incident is repeatedly reflection between the two highly reflecting films minute surfaces in FP chamber, carries out multiple-beam interference.The energy transmissive of having only certain wavelength at last in like manner, also has only the luminous energy of certain wavelength to be reflected back to the device other end, can accept specific wavelength transmitted light or reflected light with optical fibre device in the relevant position, thereby reach the function of optically filtering.Under the constant situation of other condition, the wavelength of transmission (or reflection) lives forever in funtcional relationship with the chamber in FP chamber.Top electrode 4 or 5 and bottom electrode 15 or 16 between add voltage, then electrostrictive effect can take place in piezoelectrics 6 under the effect of Z axial electric field, thereby drive last silicon body 1 attached thereto and relative Z axial displacement takes place with Gao Tai 12, thereby the chamber that has changed the FP chamber is long, has finally changed the centre wavelength of the light wave of transmission (or reflection).There is fixing funtcional relationship in the piezoelectrics collapsing length with applying between the magnitude of voltage.Realized thus finally having realized the function of adjustable filter with electric signal tuning to light filtering centre wavelength.
Its preparation technology in top first kind basic identical, only in the A of step (1) makes, add one again and utilize burn into etching or other mechanical method to make cylinder, sphere or approximate cylinder, sphere 22, its normal direction is vertical with another plane.
Description of drawings
Fig. 1 unit front view.Fig. 1 (a) is the each several part figure before the assembling; Fig. 1 (b) is the unit figure after having assembled; Fig. 1 (c) has and stops that the block structured unit is rejected at last for to have the unit figure that stops after block structured has assembled.
Fig. 2 A partly makes synoptic diagram.Fig. 2 (a) is that unprocessed silicon body, glass or other are easy to the body material of micromachined, and Fig. 2 (b) is for having made the synoptic diagram of break-through groove.
Fig. 3 C partly makes synoptic diagram.Fig. 3 (a) is unprocessed SOI silicon body or common silicon chip, and Fig. 3 (b) is for processing the SOI silicon body or the common silicon chip of stopper 17, and Fig. 3 (c) is for processing SOI silicon body or the common silicon chip of end silicon layer 11 and Gao Tai 12.
Assembling synoptic diagram before Fig. 4 scribing.Fig. 4 (a) is unconjugated A, B, C three part synoptic diagram.Fig. 4 (b) is in conjunction with A, B, the C three part synoptic diagram for the treatment of scribing after intact.
Fig. 5 stopper guarantees depth of parallelism principle schematic.
The unit presses the synoptic diagram of upper left metal wire 18, upper right metal wire 19, lower-left metal wire 20, bottom right metal wire 21 after Fig. 6 scribing.Fig. 6 (a) is a front view, and Fig. 6 (b) is an oblique view.
The distressed structure of Fig. 7 A part.Fig. 7 (a) is the assembling front view of A, B, C three parts, and Fig. 7 (b) presses synoptic diagram behind the metal lead wire for the unit.
1-goes up silicon body, the last anti-reflection film of 2-, the last high-reflecting film of 3-, 4-left end electrode of metal among the figure, 5-right-hand member electrode of metal, 6-piezoelectrics, 7-piezoelectrics upper strata metal, 8-piezoelectrics lower metal, the 9-upper glue layer, 10-lower glue layer, silicon layer at the bottom of the 11-, the high platform of 12-, high-reflecting film under the 13-, anti-reflection film under the 14-, 15-left end metal bottom electrode, 16-right-hand member metal bottom electrode, the 17-stopper, the upper left metal wire of 18-, the upper right metal wire of 19-, 20-lower-left metal wire, 21-bottom right metal wire, 22-cylinder or sphere.
Embodiment
Embodiment 1 the invention provides Piezoelectric Driving FP chamber tunable optical filter structural unit shown in Fig. 1 (b).This structure is by being combined closely and formed by A, B, three parts of C, and A can be silicon body, glass or other is easy to the body material of micromachined, and B is the piezoelectrics material, and C is a soi wafer.Last silicon body 1 is arranged on the A, last anti-reflection film 2, last high-reflecting film 3, left end electrode of metal 4, right-hand member electrode of metal 5 be totally five parts; About B has two of identical separation to lay respectively at, piezoelectrics 6 are arranged on each piece, piezoelectrics upper strata metal 7, piezoelectrics lower metal 8, and be used for five parts such as the bonding upper glue layer 9 of same A, C part, lower glue layer 10; Six parts such as end silicon layer 11, high platform 12, following high-reflecting film 13, following anti-reflection film 14, left end metal bottom electrode 15, right-hand member metal bottom electrode 16 are arranged on the C, in manufacturing process, also can produce stopper 17 on the C, make the back stopper 17 that finishes at last and be removed.
When A, B, C three partial geometries together the time, A, C two parts combine by two piezoelectrics upper glue layers 9 about middle B and lower glue layer 10, thus the FP cavity by high-reflecting film 3 on two piezoelectric blocks, that separate and once high-reflecting film 13 constitute.
Present embodiment each several part architectural feature and interdependence:
1. go up silicon body 1 plane perpendicular to the Z axle, main composition upper reflector face and carrying are gone up anti-reflection film 2, are gone up high-reflecting film 3, left end electrode of metal 4, right-hand member electrode of metal 5, silicon plane, upper body is about the XZ plane symmetry, last silicon body 1 in the length of Y direction less than bottom silicon 11 and Gao Tai 12 lower surfaces length in Y direction;
2. bottom silicon 11, high platform 12 are formed by same buik silicon, and its plane is perpendicular to the Z axle, and face overlaps bottom.Bottom silicon 11, high platform 12 be separately about the XZ plane symmetry, and in the equal in length of X-direction, greater than bottom silicon 11, high platform 12 is centered close to XYZ coordinate axle initial point to high platform 12 in the length of Z-direction;
3. each piece piezoelectric blocks 6 is a hexahedron, two piezoelectrics 6 are arranged in a full unit, mutually about the XZ plane symmetry, length in X-direction equates with upper body silicon 1, be less than or equal to respective metal top electrode (left end electrode of metal 4 or right-hand member electrode of metal 5) in half of the difference of Y direction length in the length of Y direction, be slightly less than stopper 17 upper surfaces and bottom silicon 11 upper surfaces spacing in the length of Z-direction in Z-direction, under the Z-direction electric field, piezoelectrics 6 are flexible in Z-direction.
4. stopper 17 is positioned on the high platform 12, it is initially the top layer silicon of SOI material, is less than or equal to the length of high platform 12 in X-direction in X-direction length, about the XZ plane symmetry, length in Z-direction determines that by SOI material itself this length also is that the initial cavity in FP chamber is long;
5. go up high-reflecting film 3 and be deielectric-coating (a plurality of optical thicknesses are the mutual superposition of the high refractive index layer and the low-index layer of 1/4th operation wavelengths) or metal film, be positioned at silicon body lower surface, the last plane of reflection in main composition FP chamber, its length in X-axis, Y direction is equal to silicon body 1;
6. descend high-reflecting film 13 to be deielectric-coating (a plurality of optical thicknesses are the mutual superposition of the high refractive index layer and the low-index layer of 1/4th operation wavelengths) or metal film, be positioned at the upper surface of bottom silicon 11 and Gao Tai 12, high-reflecting film on wherein high 12 constitutes the following plane of reflection in FP chamber, in the unit that stopper 17 is arranged, following high-reflecting film 13 is positioned at the upper surface of stopper 17 and bottom silicon 11, give up at last, its length in X-axis, Y direction is equal to the lower surface of bottom silicon 11 and Gao Tai 12;
7. going up anti-reflection film 2 is deielectric-coating, is positioned at the upper surface of silicon body 1, purpose be incident to with making the light signal low-loss high-reflecting film 3 surfaces or low-loss ground by last high-reflecting film 3 surperficial outgoing to the device outside, its length in X-axis, Y direction is equal to silicon body 1;
8. descending anti-reflection film 14 is deielectric-coating, be positioned at the lower surface of bottom silicon 11 and Gao Tai 12, purpose be make light signal low-loss ground by high-reflecting film 13 surperficial outgoing down to device outside or low-loss be incident to down high-reflecting film 13 surfaces, its length in X-axis, Y direction is equal to the lower surface of bottom silicon 11 and Gao Tai 12;
9. piezoelectrics upper strata metal 7 is positioned at the upper surface of piezoelectrics 6, and piezoelectrics lower metal 8 is positioned at the lower surface of piezoelectrics 6, and it mainly plays the polarized piezoelectric body, and make applied field in piezoelectrics on the XY plane branch even;
10. left end electrode of metal 4 is positioned at the upper surface left end of anti-reflection film 2 and the lower surface left end of last high-reflecting film 3, thereby the metal on this two surface is by the left end side evaporation metal conducting of last silicon body 1, and the same silicon body 1 insulation, left end electrode of metal 4 is less than or equal to silicon body 1 and Gao Tai 12 in half of the difference of Y direction length in the length of Y direction, and more than or equal to the length of piezoelectrics 6 in Y direction, left end electrode of metal 4 with right-hand member electrode of metal 5 with respect to the XZ plane symmetry;
11. right-hand member electrode of metal 5 is positioned at the upper surface right-hand member of anti-reflection film 2 and the lower surface right-hand member of last high-reflecting film 3, thereby the metal on this two surface is by the left end side evaporation metal conducting of last silicon body 1, and the same silicon body 1 insulation, right-hand member electrode of metal 5 is less than or equal to silicon body 1 and Gao Tai 12 in half of the difference of Y direction length in the length of Y direction, and more than or equal to the length of piezoelectrics 6 in Y direction, have the end electrode of metal 5 with left end electrode of metal 4 with respect to the XZ plane symmetry;
12. left end metal bottom electrode 15 is positioned at high-reflecting film 13 upper surface left ends down, on the left side of high platform 12, its length in Y direction equals half of bottom silicon 11 (not comprising high platform 12);
13. right-hand member metal bottom electrode 16 is positioned at high-reflecting film 13 upper surface right-hand members down, on the right of high platform 12, its length in Y direction equals half of bottom silicon 11 (not comprising high platform 12);
14. glue-line 9 electrode of metal 4 or 5 and piezoelectrics upper strata metal 7 between, glue-line 10 metal bottom electrode 15 or 16 and piezoelectrics lower metal 8 between, mainly play a part A, B, C three bondingly, it is in the adjustable length of Z-direction;
Embodiment 2 as shown in Figure 7, the lower surface central authorities of silicon body 1 are a recessed cylinder, sphere or approximate cylinder, sphere 22 on the present embodiment, its normal direction is vertical with another plane, constitutes " plano-concave " FP resonator cavity.
Present embodiment other with embodiment 1.
Embodiment 3 changes the soi wafer of making the C part among the embodiment 1,2 into common silicon chip, utilize common silicon chip to corrode earlier or etch the stopper 17 of certain depth, need carry out glossing again to the bottom surface that erodes away behind the stopper 17, improve surface quality, utilize the technology of corrosion or etching to produce high platform 12 again and end silicon layer 11 waits other structure.Other is with embodiment 1,2.
Embodiment 4 grows the stopper 17 of certain altitude with common silicon chip among the embodiment 3 with the way of selective epitaxial growth on original surface, produce high platform 12 and end silicon layer 11 waits other structure in the technology of utilizing corrosion or etching at common silicon chip original surface.Other is with embodiment 1,2,3.
Claims (10)
1. Piezoelectric Driving Fabry-Perot cavity tunable optical filter spare is characterized in that it is partly combined closely by A, B, C three to constitute, wherein:
(1) last silicon body (1), last anti-reflection film (2), last high-reflecting film (3), left end electrode of metal (4), right-hand member electrode of metal (5) totally five parts is arranged on the A; Last silicon body (1) plane vertical Z axle, last high-reflecting film (3) is positioned at silicon body lower surface, the last reflecting surface of main composition FP, it is used for silicon body (1) in length of X-axis, Y direction etc.; Last anti-reflection film (2) is positioned at silicon body (1) upper surface, and its length in X-axis, Y direction is equal to silicon body (1); Left end and right-hand member electrode of metal (4), (5) lay respectively at lower surface left end, the right-hand member of upper surface left end, right-hand member and the last high-reflecting film (3) of anti-reflection film;
(2) about B has two of identical and separation to lay respectively at, piezoelectrics (6), piezoelectrics upper strata metal (7), piezoelectrics lower metal (8) are arranged on each piece; Piezoelectrics upper strata metal (7) and lower metal (8) lay respectively at the upper surface and the lower surface of piezoelectrics (6); The FP cavity is by anti-film of high pressure (3) on two piezoelectric blocks, that separate and high-reflecting film (13) formation once; Form plane FP cavity;
(3) end silicon layer (11), high platform (12), following high-reflecting film (13), following anti-reflection film (14), left end metal bottom electrode (15), (16) six parts of right-hand member metal bottom electrode are arranged on the C, left end and right-hand member metal bottom electrode (15), (16) lay respectively at down the left and right end of high-reflecting film (13) upper surface, on the left and right limit of Gao Tai (12); Equal half of bottom silicon (11) in the length of Y direction; Bottom silicon (11) He Gaotai (12) is formed by same buik silicon, and the plane is perpendicular to the Z axle, and face overlaps bottom; High platform (12) is positioned at the central authorities of C in Y direction; Following highly reflecting films (13) are positioned at the upper surface of bottom silicon (11) He Gaotai (12), high-reflecting film on the high platform (12) constitutes the face reflecting surface in FP chamber, following anti-reflection film (14) is positioned at the lower surface of bottom silicon (11) He Gaotai (12), and its length in X-axis, Y direction is equal to the lower surface of bottom silicon (11) He Gaotai (12).
2. by the described Piezoelectric Driving Fabry-Perot cavity of claim 1 tunable optical filter spare, it is characterized in that upper glue layer (9) is positioned between left and right electrode of metal (4), (5) and the piezoelectrics upper strata metal (7); Lower glue layer (10) is positioned between left and right metal bottom electrode (14), (15); Combining closely of B and A, C two parts is the upper glue layer (9) and the bonding realization of lower glue layer (10) of leaning on the piezoelectric blocks.
3. by the described Piezoelectric Driving Fabry-Perot cavity of claim 1 tunable optical filter spare, it is characterized in that the last silicon body of described A part or be the body material that is easy to micromachined for glass; It and left end electrode of metal (4), right-hand member electrode of metal (5) or mutual conduction, or mutually insulated.Upper body silicon (1) in the length of Y direction less than the length of bottom silicon (11) He Gaotai (12) lower surface in Y direction; Last high-reflecting film is deielectric-coating or metal film, and last anti-reflection film is a deielectric-coating; The following high-reflecting film of C part is deielectric-coating or metal film, and following anti-reflection film is a deielectric-coating.
4. by the method for making of the described Piezoelectric Driving Fabry-Perot cavity of claim 1 tunable optical filter spare, it is characterized in that
(1) preparation of A part: the break-through groove of producing some with dry etching or corroding method along X-direction, the side of groove is steamed and is gone up metal, thereby the metal electrode on anti-reflection film on the correspondence (2) and the last high-reflecting film (3) is linked up, the break-through groove also can cause A part in the length of Y direction less than the length of C part in Y direction, thereby directly metal lead wire is drawn from bottom electrode (14) or (15); After the break-through groove performs, long good anti-reflection film and high-reflecting film on respective face; After protecting area with gluing, steaming metal, again with the metal-stripping of not wanting with perpendicular two surfaces of Z axle in order to logical light;
(2) B partly prepares: piezoelectrics are laminated, and thickness is the length of piezoelectrics (6) in Z-direction, and upper and lower surface should be parallel, and metals steam are gone up on two surfaces, polarize, and cuts into rectangularly again, and rectangular width is the length of piezoelectrics (6) in the Y-axis defence line;
(3) preparation of C part: produce stopper (17) with etching or corroding method on unprocessed soi wafer, the height of the stopper of producing (17) is its length in Z-direction, equals the thickness of soi wafer top layer silicon; Or utilize common silicon chip to corrode or etch the stopper (17) of certain depth earlier, produce high platform (12) and bottom silicon (11) structure again; Or, produce high platform (12) box bottom silicon (11) structure again with selective epitaxial growth process epitaxial growth stopper (17) on common silicon chip;
(4) assembling: respectively have adhesive gum special to exist between B and A, the C, solidify at a certain temperature, when solidifying, apply inwards pressure in Z-direction, glue (9) and (10) all are extruded, and the Z axial spacing of last high-reflecting film (3) and following high-reflecting film (13) depends on the height of stopper (7);
(5) electrode is cut apart and is drawn in scribing: treat after glue (9) and (10) full solidification, be divided into earlier along the break-through groove on the A rectangular, again along Y direction with each rectangular individual unit that is divided into; Four electrical leads (18,19,20,21) mutually insulated; Or with (18,19) altogether, (20,21) apply voltage, or with (20,21) altogether, apply voltage on (18,19).
5. press the method for making of the described Piezoelectric Driving Fabry-Perot cavity of claim 4 tunable optical filter spare, it is characterized in that described stopper height depends on the thickness of SOI top layer silicon, during with common silicon chip, barrier height depends on the degree of depth of burn into etching or the height of selective epitaxial growth.
6. Piezoelectric Driving Fabry-Perot cavity tunable optical filter spare is characterized in that it is partly combined closely by A, B, C three to constitute, wherein:
(1) last silicon body (1), last anti-reflection film (2), last high-reflecting film (3), left end electrode of metal (4), right-hand member electrode of metal (5) totally five parts is arranged on the A; Last silicon body (1) plane vertical Z axle, last high-reflecting film (3) is positioned at silicon body lower surface, the last reflecting surface of main composition FP, it is used for silicon body (1) in length of X-axis, Y direction etc.; Last anti-reflection film (2) is positioned at silicon body (1) upper surface, and its length in X-axis, Y direction is equal to silicon body (1); Left end and right-hand member electrode of metal (4), (5) lay respectively at lower surface left end, the right-hand member of upper surface left end, right-hand member and the last high-reflecting film (3) of anti-reflection film;
(2) about B has two of identical and separation to lay respectively at, piezoelectrics (6), piezoelectrics upper strata metal (7), piezoelectrics lower metal (8) are arranged on each piece; Piezoelectrics upper strata metal (7) and lower metal (8) lay respectively at the upper surface and the lower surface of piezoelectrics (6); The FP cavity is by two piezoelectric blocks that decompose, and recessed cylinder, sphere or approximate cylinder, sphere and a high-reflecting film (22) reach high-reflecting film (13) formation platycelous resonance control;
(3) end silicon layer (11), high platform (12), following high-reflecting film (13), following anti-reflection film (14), left end metal bottom electrode (15), (16) six parts of right-hand member metal bottom electrode are arranged on the C, left end and right-hand member metal bottom electrode (15), (16) lay respectively at down the left and right end of high-reflecting film (13) upper surface, on the left and right limit of Gao Tai (12); Equal half of bottom silicon (11) in the length of Y direction; Bottom silicon (11) He Gaotai (12) is formed by same buik silicon, and the plane is perpendicular to the Z axle, and face overlaps bottom; High platform (12) is positioned at the central authorities of C in Y direction; Following highly reflecting films (13) are positioned at the upper surface of bottom silicon (11) He Gaotai (12), high-reflecting film on the high platform (12) constitutes the face reflecting surface in FP chamber, following anti-reflection film (14) is positioned at the lower surface of bottom silicon (11) He Gaotai (12), and its length in X-axis, Y direction is equal to the lower surface of bottom silicon (11) He Gaotai (12).
7. by the described Piezoelectric Driving Fabry-Perot cavity of claim 6 tunable optical filter spare, it is characterized in that upper glue layer (9) is positioned between left and right electrode of metal (4), (5) and the piezoelectrics upper strata metal (7); Lower glue layer (10) is positioned between left and right metal bottom electrode (14), (15); Combining closely of B and A, C two parts is the upper glue layer (9) and the bonding realization of lower glue layer (10) of leaning on the piezoelectric blocks.
8. by the described Piezoelectric Driving Fabry-Perot cavity of claim 6 tunable optical filter spare, it is characterized in that the last silicon body of described A part or be the body material that is easy to micromachined for glass; It and left end electrode of metal (4), right-hand member electrode of metal (5) or mutual conduction, or mutually insulated.Upper body silicon (1) in the length of Y direction less than the length of bottom silicon (11) He Gaotai (12) lower surface in Y direction; Last high-reflecting film is deielectric-coating or metal film, and last anti-reflection film is a deielectric-coating; The following high-reflecting film of C part is deielectric-coating or metal film, and following anti-reflection film is a deielectric-coating.
9. by the method for making of the described Piezoelectric Driving Fabry-Perot cavity of claim 1 tunable optical filter spare, it is characterized in that
(1) preparation of A part: the break-through groove of producing some with dry etching or corroding method along X-direction, the side of groove is steamed and is gone up metal, thereby the metal electrode on anti-reflection film on the correspondence (2) and the last high-reflecting film (3) is linked up, the break-through groove also can cause A part in the length of Y direction less than the length of C part in Y direction, thereby directly metal lead wire is drawn from bottom electrode (14) or (15); After the break-through groove performs, long good anti-reflection film and high-reflecting film on respective face; After protecting area with gluing, steaming metal, again with the metal-stripping of not wanting with perpendicular two surfaces of Z axle in order to logical light; Utilize burn into lithographic method system post Xu, sphere or approximate cylinder, its normal direction of sphere (22) vertical with another plane;
(2) B partly prepares: piezoelectrics are laminated, and thickness is the length of piezoelectrics (6) in Z-direction, and upper and lower surface should be parallel, and metals steam are gone up on two surfaces, polarize, and cuts into rectangularly again, and rectangular width is the length of piezoelectrics (6) in the Y-axis defence line;
(3) preparation of C part: produce stopper (17) with etching or corroding method on unprocessed soi wafer, the height of the stopper of producing (17) is its length in Z-direction, equals the thickness of soi wafer top layer silicon; Or utilize common silicon chip to corrode or etch the stopper (17) of certain depth earlier, produce high platform (12) and bottom silicon (11) structure again; Or, produce high platform (12) box bottom silicon (11) structure again with selective epitaxial growth process epitaxial growth stopper (17) on common silicon chip;
(4) assembling: respectively have adhesive gum special to exist between B and A, the C, solidify at a certain temperature, when solidifying, apply inwards pressure in Z-direction, glue (9) and (10) all are extruded, and the Z axial spacing of last high-reflecting film (3) and following high-reflecting film (13) depends on the height of stopper (7);
(5) electrode is cut apart and is drawn in scribing: treat after glue (9) and (10) full solidification, be divided into earlier along the break-through groove on the A rectangular, again along Y direction with each rectangular individual unit that is divided into; Four electrical leads (18,19,20,21) mutually insulated; Or with (18,19) altogether, (20,21) apply voltage, or with (20,21) altogether, apply voltage on (18,19).。
By the described Piezoelectric Driving Fabry-Perot cavity tunable optical filter spare of claim 6 and method for making with, it is characterized in that described stopper height depends on the thickness of SOI top layer silicon, during with common silicon chip, barrier height depends on the degree of depth of burn into etching or the height of selective epitaxial growth.
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