CN1441545A - Power amplifier - Google Patents
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- CN1441545A CN1441545A CN 03106303 CN03106303A CN1441545A CN 1441545 A CN1441545 A CN 1441545A CN 03106303 CN03106303 CN 03106303 CN 03106303 A CN03106303 A CN 03106303A CN 1441545 A CN1441545 A CN 1441545A
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Abstract
To provide a power amplifier that operates in a thermally stable manner and features a low distortion. In the power amplifier, a bypass path through a first and a second impedance paths Z1 and ZZ is formed for a high-frequency component at both ends of a resistor RB, which is connected between a base terminal B of a bipolar transistor Q1 and a base bias voltage supplying terminal VB. Therefore, part of an alternating current component of a base current that flows from the base bias voltage supplying terminal VB to the resistor RB is distributed to above bypass path. Thus, an increase in voltage drop at the resistor RB can be substantially suppressed, gain compression can be suppressed, and the power amplifier can operate at a low distortion. Moreover, the impedance of at least one of the first and second impedance circuits Z1 and ZZ is open to a direct current component and conductive to the alternating current component, thus making it possible to hold down the increase of base current due to a temperature rise by the voltage drop at the resistor RB.
Description
Technical field
The present invention relates to the low distortion that uses on the high frequency band of portable phone etc., the power amplifier that working heat stability is high.
Background technology
Bipolar transistor is representative with the GaAs heterojunction bipolar transistor, is used for the power amplifier of portable phone etc.
In addition, bipolar transistor is the device with hot positive feedback characteristic, and heating increases base stage and collector current, so for thermally-stabilised work, the general additional circuit that collector current rises and increases with temperature that suppresses.
In addition, use at transmit power amplifier under the situation of bipolar transistor, in order to increase power output, the power output that a plurality of bipolar transistors that generally are connected in parallel obtain stipulating.In the case, because the inhomogeneities of temperature between each transistor, current concentration can not obtain desirable parallel operation in specific transistor, perhaps under the poorest situation, causes component wear.Therefore, must add the circuit that the inhibition collector current rises and increases with temperature.
Suppress collector current with the circuit that temperature rises and increases as this, the circuit that has inserted resistance between base terminal and base bias power supply is arranged.In this circuit, suppress base current by above-mentioned ohmically pressure drop and increase, so consequently can suppress the increase of collector current with the temperature rising.
The conventional example (United States Patent (USP) (US 5608353)) that this circuit structure is applied to the parallel operation of a plurality of bipolar transistors is shown in Figure 11.
This conventional example is that the individual bipolar transistor Q101～Q10n of n (integer that n:2 is above) carries out the circuit of parallel operation, Q101～Q10n is the grounded emitter bipolar transistor, and RB101～RB10n is the resistance that connects between the base terminal of each transistor Q101～Q10n and the base supply VB.In addition, C101～C10n is the capacitor that connects between the base terminal of each transistor Q101～Q10n and the signal input terminal RFIN.This capacitor C101～C10n has following function: signal input terminal RFIN is separated direct current with base supply terminal VB, will import the base terminal of each bipolar transistor Q101～Q10n from the high-frequency signal of signal input terminal RFIN input simultaneously.
In addition, in this circuit, even the base current of each bipolar transistor Q101～Q10n is produced under the situation of uneven distribution, (k=1～n), the pressure drop on resistance R B101～RB10n is little for the little transistor Q10k of base current; (k=1～n), the pressure drop on resistance R B101～RB10n is big and for the big transistor Q10k of base current.Consequently, (collector current of k=1～n) is homogenized, can obtain thermally-stabilised work for each bipolar transistor Q10k.
Yet, use at the power amplifier that the communicator of in recent years employing digital modulation and demodulation mode is used under the situation of bipolar transistor circuit of above-mentioned conventional example, following problem is arranged.
That is,,, require the work of power amplifier low distortion so need amplifying signal waveform verily because digital modulation mode generally adopts QPSK (quarternary phase-shift keying (QPSK)) or QAM (quadrature amplitude modulation) etc. that information is carried in the amplitude of signal and the mode on the phase place.Therefore, in this power amplifier, need the output current amplitude that increases to direct ratio (collector current amplitude) of the current amplitude (base current amplitude) of output and input signal.
Yet in above-mentioned conventional example, along with the collector current amplitude increases, the increase of base current increases the pressure drop on resistance R B101～RB10n, so the increase of the increase of base current amplitude and collector current amplitude can not be kept proportional relation.This is so-called gain compression (a ゲ イ Application コ Application プ レ Star シ ョ Application), makes amplifier produce amplitude distortion.
Therefore, the present invention proposes in order to solve above-mentioned problem, and its purpose is to provide the power amplifier of a kind of thermally-stabilised work and low distortion.
Summary of the invention
To achieve these goals, power amplifier of the present invention is characterised in that, comprising:
The grounded emitter bipolar transistor, its collector terminal is connected on the signal output terminal;
Resistance, the base terminal and the base bias that are connected above-mentioned grounded emitter bipolar transistor provide between the terminal; And
Impedance circuit portion provides the above-mentioned resistance between the terminal to be connected in parallel with respect to the base terminal and the aforementioned base bias voltage of above-mentioned grounded emitter bipolar transistor, and DC component is open circuit, and is conducting to alternating current component.
In power amplifier of the present invention, be connected in parallel, be the impedance circuit portion of conducting constitutes above-mentioned resistance to AC signal bypass for open circuit and to alternating current component DC component with respect to above-mentioned resistance.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned impedance circuit portion is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, in one embodiment, in above-mentioned power amplifier, above-mentioned impedance circuit portion has: the 1st impedance circuit, an one terminal is connected on the base terminal of above-mentioned grounded emitter bipolar transistor, and another terminal is connected on the signal input terminal; And
The 2nd impedance circuit, an one terminal is connected on the above-mentioned signal input terminal, and another terminal is connected the aforementioned base bias voltage and provides on the terminal;
In above-mentioned the 1st impedance circuit or above-mentioned the 2nd impedance circuit at least one is open circuit to DC component, and is conducting to alternating current component.
In this embodiment, at the two ends that the base terminal and the base bias of bipolar transistor provides the resistance that connects between the terminal, the high fdrequency component via the 1st, the 2nd impedance circuit is formed bypass.Therefore, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, two terminal impedances of at least one in the above-mentioned the 1st and the 2nd impedance circuit are open circuit to DC component, and are conducting to alternating current component, rise with temperature and increase so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, an execution mode comprises a plurality of enlarging sections that are made of above-mentioned grounded emitter bipolar transistor, above-mentioned resistance and above-mentioned the 1st impedance circuit;
In the 1st impedance circuit of above-mentioned a plurality of enlarging sections or above-mentioned the 2nd impedance circuit at least one is open circuit to DC component, and is conducting to alternating current component.
In this execution mode, comprise a plurality of above-mentioned enlarging sections, a plurality of above-mentioned grounded emitter bipolar transistors are connected in parallel constitutes power amplifier.In the case, be that the 1st impedance circuit of open circuit or at least one in the 2nd impedance circuit also constitute the bypass of above-mentioned resistance to AC signal to direct current.
According to this structure, the aforementioned base bias voltage provides the part of the alternating current component of the base current between the base terminal of terminal and each bipolar transistor to be assigned to above-mentioned bypass.Thus, actual effect is to suppress the increase of each ohmically pressure drop, and the gain compression that can suppress to see in the conventional example makes the power amplifier can low distortion work.
In addition, can suppress base current by each ohmically pressure drop and increase, so consequently, can suppress the increase of the collector current of each bipolar transistor, can realize work and low distortion work that heat is even and stable simultaneously with the temperature rising.
In addition, in one embodiment, above-mentioned impedance circuit portion has:
The 1st impedance circuit, an one terminal is connected on the signal input terminal, and another terminal is connected on the base terminal of above-mentioned grounded emitter bipolar transistor; And
The 2nd impedance circuit, an one terminal is connected the aforementioned base bias voltage and provides on the terminal, and another terminal is connected on the aforementioned base terminal;
Above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component.
In the power amplifier of this execution mode, the aforementioned base bias voltage provides the 2nd impedance circuit that connects between terminal and the base terminal that DC component is open circuit, and is conducting to alternating current component.
Therefore, above-mentioned the 2nd impedance circuit constitutes the direct bypass of the above-mentioned resistance of direct bypass to AC signal.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, an execution mode comprises a plurality of enlarging sections that are made of above-mentioned grounded emitter bipolar transistor, above-mentioned resistance, above-mentioned the 1st impedance circuit and above-mentioned the 2nd impedance circuit; Above-mentioned the 2nd impedance circuit of above-mentioned a plurality of enlarging sections is open circuit to DC component, and is conducting to alternating current component.
In this embodiment, the 2nd impedance circuit that each enlarging section has is open circuit to DC component, and is conducting to alternating current component.
Therefore, above-mentioned the 2nd impedance circuit constitutes the bypass of the above-mentioned resistance of direct bypass to AC signal.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, in one embodiment, at least one in the above-mentioned the 1st or the 2nd impedance circuit has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.
In the power amplifier of this execution mode, at least one in the above-mentioned the 1st or the 2nd impedance circuit has above-mentioned capacitor, and it is the circuit of conducting for open circuit and to alternating current component that enough this capacitors of energy form DC component.Therefore, can realize in the 1st or the 2nd impedance circuit at least one with simple circuit configuration.
In addition, in one embodiment, above-mentioned the 2nd impedance circuit has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.
In this embodiment, can enough this capacitors to form DC component be the circuit of conducting for open circuit and to alternating current component for above-mentioned the 2nd impedance circuit.Therefore, can realize above-mentioned the 2nd impedance circuit with simple circuit configuration.
In addition, in one embodiment, comprise that base voltage provides parts; Provide terminal and aforementioned base voltage to provide between the parts at the aforementioned base bias voltage, be connected with variable impedance circuit.
In this embodiment, the impedance of the above-mentioned variable impedance circuit amplitude that depends on the signal of input changes.This variable impedance circuit for example comprises as the diode of variable impedance element or bipolar transistor.According to this variable impedance circuit, when the electric current that provides parts to provide from base voltage increased along with the increase of input signal power, base voltage provided parts and base bias to provide the impedance between the terminal to reduce, and the pressure drop on the variable impedance circuit reduces.Therefore, this execution mode is for can further suppressing the power amplifier of distortion.
On the other hand, above-mentioned variable impedance element has the characteristic of the temperature of depending on, so additional above-mentioned variable impedance element is the main cause that causes the work of power amplifier thermally labile, but the thermally-stabilised work effect that base terminal and base bias by above-mentioned grounded emitter bipolar transistor provide the resistance that connects between the terminal can be avoided above-mentioned thermally labile work.
Description of drawings
Fig. 1 is the circuit diagram of the 1st execution mode of power amplifier of the present invention.
Fig. 2 is the circuit diagram of the 2nd execution mode of power amplifier of the present invention.
Fig. 3 is the circuit diagram of the 3rd execution mode of power amplifier of the present invention.
Fig. 4 is the circuit diagram of the 4th execution mode of power amplifier of the present invention.
Fig. 5 is the circuit diagram of the 5th execution mode of power amplifier of the present invention.
Fig. 6 is the circuit diagram of the 6th execution mode of power amplifier of the present invention.
Fig. 7 is the circuit diagram of the 7th execution mode of power amplifier of the present invention.
Fig. 8 is the circuit diagram of the 8th execution mode of power amplifier of the present invention.
Fig. 9 is the circuit diagram of the 9th execution mode of power amplifier of the present invention.
Figure 10 is the circuit diagram of the 10th execution mode of power amplifier of the present invention.
Figure 11 is the circuit diagram of existing power amplifier.
Figure 12 is the circuit diagram of the 11st execution mode of power amplifier of the present invention.
Figure 13 is the circuit diagram of the 12nd execution mode of power amplifier of the present invention.
Figure 14 is the circuit diagram of the 13rd execution mode of power amplifier of the present invention.
Figure 15 is the circuit diagram of the 14th execution mode of power amplifier of the present invention.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.
(the 1st execution mode)
Fig. 1 illustrates the 1st execution mode of power amplifier of the present invention.The power amplifier Amp1 of the 1st execution mode comprise have base terminal B, the grounded emitter type bipolar transistor Q1 of collector terminal Co and base bias provide the resistance R B that connects between terminal VB and the base terminal B.The collector terminal Co of above-mentioned grounded emitter type bipolar transistor Q1 is connected on the signal output terminal RFOUT.
In addition, the power amplifier Amp1 of the 1st execution mode comprises the 1st impedance circuit Z1 with 2 terminals P a1, Pb1, and the terminals P a1 of this impedance circuit Z1 is connected on the signal input terminal RFIN, and terminals P b1 is connected on the aforementioned base terminal B.In addition, the 1st execution mode comprises the 2nd impedance circuit ZZ, and the terminals P a of the 2nd impedance circuit ZZ is connected on the above-mentioned signal input terminal RFIN, and terminals P b is connected the aforementioned base bias voltage and provides on the terminal VB.
Here, be open-circuit condition to DC component between 2 terminals of at least one among the 1st impedance circuit Z1 and the 2nd impedance circuit ZZ, and be conducting state alternating current component.Above-mentioned the 1st impedance circuit Z1 and the 2nd impedance circuit ZZ constitute the impedance circuit ZI1 of portion.
Therefore, in the 1st execution mode, concerning direct current, base bias provides between terminal VB and the base terminal B has only resistance R B.Therefore, suppressing base current by the pressure drop on the above-mentioned resistance R B increases with the temperature rising.Thus, consequently, can suppress the increase of the collector current of grounded emitter type bipolar transistor Q1, can guarantee that the variation or the spontaneous heating of transistor Q1 opposing environment temperature stably worked.
On the other hand, the high-frequency signal from signal input terminal RFIN input is imported into base terminal B via impedance circuit Z1.Concerning high frequency,, the high fdrequency component via the 1st, the 2nd impedance circuit Z1, ZZ is formed bypass at the two ends that base terminal B and the base bias of bipolar transistor Q1 provides the resistance R B that connects between the terminal VB.Therefore, the part of alternating current component that flows to the base current of above-mentioned resistance R B is assigned to above-mentioned bypass.Therefore, actual effect is to suppress the increase of the pressure drop on the above-mentioned resistance R B, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, in the 1st execution mode, the 1st, the 2nd impedance circuit Z1, ZZ are to the bypass of resistance R B formation high fdrequency component, so passing through phase place or by amplitude, also can adjust the current waveform that is injected among the base terminal B by the signal in this bypass of change.In addition, in the 1st execution mode, above-mentioned bypass is made of 2 impedance circuit Z1, ZZ, so be to adjust the high circuit structure of the degree of freedom that is injected into the current waveform among the base terminal B.
(the 2nd execution mode)
Then, Fig. 2 illustrates the 2nd execution mode of power amplifier of the present invention.The 2nd execution mode is an example of and simple execution mode more concrete than aforementioned the 1st execution mode, and the 1st impedance circuit Z1 among Fig. 1 is made of capacitor C1, and the 2nd impedance circuit ZZ is made of capacitor Ca1.
According to the 2nd execution mode, can constitute by the such simple components of capacitor C1, Ca1 to the direct current open circuit and to the 1st, the 2nd impedance circuit Z1, the ZZ that exchanges conducting, same with aforementioned the 1st execution mode, can realize thermally-stabilised work and low distortion work simultaneously.
(the 3rd execution mode)
Then, Fig. 3 illustrates the 3rd execution mode of the present invention.The 3rd execution mode is that will be connected in series on capacitor Ca1 in aforementioned the 2nd execution mode series circuit of resistance R a1 forms as the 2nd impedance circuit.The 1st impedance circuit and the 2nd execution mode are same, and C1 constitutes by capacitor.
According to the 3rd execution mode, the resistance value adjustment of resistance R a1 that can be by constituting the 2nd impedance circuit is flow through the alternating current component of the base current of resistance R B.Therefore,, compare, can suppress the gain compression of power amplifier accurately with the 2nd execution mode according to the 3rd execution mode.
(the 4th execution mode)
Then, Fig. 4 illustrates the 4th execution mode of power amplifier of the present invention.The 4th execution mode comprise have base terminal B, the grounded emitter type bipolar transistor Q1 of collector terminal Co and base bias provide the resistance R B that connects between terminal VB and the base terminal B.The collector terminal Co of above-mentioned grounded emitter type bipolar transistor Q1 is connected on the signal output terminal RFOUT.
In addition, the power amplifier of the 4th execution mode has: the 1st impedance circuit Z1, and its terminals P a1 is connected on the signal input terminal RFIN, and terminals P b1 is connected on the base terminal B; And the 2nd impedance circuit ZZ, its terminals P a is connected base bias and provides on the terminal VB, and terminals P b is connected on the base terminal B.1st, the 2nd impedance circuit Z1, ZZ constitute the impedance circuit ZI2 of portion.
In the 4th execution mode, be open-circuit condition to direct current between 2 terminals P a, the Pb of the 2nd impedance circuit ZZ, and to exchanging conducting.Therefore, in the 4th execution mode, concerning direct current, base bias provides between terminal VB and the base terminal B has only resistance R B.
Therefore, in the 4th execution mode, can suppress base current by the pressure drop on the above-mentioned resistance R B and increase, so consequently, can suppress the increase of collector current with the temperature rising.Therefore, variation or the spontaneous heating that can guarantee transistor Q1 opposing environment temperature stably worked.
On the other hand, the high-frequency signal from signal input terminal RFIN input is imported into base terminal B via impedance circuit Z1.In the 4th execution mode, concerning high frequency, at the two ends that base terminal B and the base bias of bipolar transistor Q1 provides the resistance R B that connects between the terminal VB, the 2nd impedance circuit ZZ forms bypass to high fdrequency component.Therefore, the part of alternating current component that flows to the base current of above-mentioned resistance R B is assigned to above-mentioned bypass, actual effect is to suppress the increase of the pressure drop on the above-mentioned resistance R B, can suppress the gain compression as the problem of above-mentioned conventional example, makes the power amplifier can low distortion work.
(the 5th execution mode)
Then, Fig. 5 illustrates the 5th execution mode of power amplifier of the present invention.The 5th execution mode be the 4th execution mode more specifically and also an example of simpler execution mode.That is, in the 5th execution mode, the 1st impedance circuit Z1 shown in Figure 4 is capacitor C1, and the 2nd impedance circuit ZZ is capacitor Ca1.
In the 5th execution mode, same with the 4th execution mode, the 1st impedance circuit Z1, the 2nd impedance circuit ZZ by this simple circuit configuration that is made of capacitor C1, capacitor Ca1 can realize thermally-stabilised work and low distortion work simultaneously.
Wherein, in above-mentioned the 1st to the 5th execution mode, comprise 1 bipolar transistor Q1, but also can between above-mentioned signal input terminal RFIN and signal output terminal RFOUT, be connected in parallel a plurality of grounded emitter bipolar transistors.
(the 6th execution mode)
Then, Fig. 6 illustrates the 6th execution mode of power amplifier of the present invention.The 6th execution mode comprises n grounded emitter type bipolar transistor Q1～Qn.Collector terminal Co1～Con of grounded emitter type bipolar transistor Q1～Qn is connected on the signal output terminal RFOUT, and emitter is grounded.
In addition, the base terminal B1 of the 1st grounded emitter type bipolar transistor Q1 is connected on the terminals P b1 and resistance R B1 of the 1st impedance circuit Z1.In addition, the terminals P a1 of above-mentioned impedance circuit Z1 is connected on the signal input terminal RFIN, and resistance R B1 is connected base terminal B1 and base bias provides between the terminal VB.
Equally, ((the base terminal Bk of k=2～n) is connected k the 1st impedance circuit Zk, and (the terminals P bk of k=2～n) is (on k=2～n) and k the resistance R Bk for k=2～n) grounded emitter type bipolar transistor Qk for k.In addition, ((k=2～n) be connected on the signal input terminal RFIN, (k=2～n) is connected k transistor Qk, and (base terminal Bk and the base bias of k=2～n) provide between the terminal VB terminals P ak of k=2～n) for k resistance R Bk for k impedance circuit Zk.
In addition, 1 the 2nd impedance circuit ZZ is connected signal input terminal RFIN and base bias provides between the terminal VB.
Above-mentioned the 1st grounded emitter type bipolar transistor Q1, the 1st impedance circuit Z1 and resistance R B1 constitute the 1st enlarging section U1, and above-mentioned k grounded emitter type bipolar transistor Qk, the 1st impedance circuit Zk and resistance R Bk constitute k enlarging section Uk.Therefore, in the 6th execution mode, comprise n the enlarging section U1～Un that is made of n grounded emitter type bipolar transistor Q1～Qn, n resistance R B1～RBn and n the 1st impedance circuit Z1～Zn, this n enlarging section U1～Un is connected signal output terminal RFOUT and signal input terminal RFIN, base bias provide between the terminal VB.
In the 6th execution mode, all n the 1st impedance circuit (is open-circuit condition to DC component between 2 terminals of at least one among Z1～Zn) and 1 the 2nd impedance circuit ZZ, and is conducting to alternating current component.
Therefore, in the 6th execution mode, concerning direct current, base bias provides between base terminal B1～Bn of terminal VB and each bipolar transistor Q1～Qn has only resistance R B1～n.
Therefore, in the 6th execution mode, can (base current that the pressure drop on the k=1～n) suppresses each bipolar transistor Q1～Qn rises with temperature and increases by above-mentioned resistance R Bk.Therefore, consequently, can suppress the increase of the collector current of each bipolar transistor Q1～Qn.Therefore, variation or the spontaneous heating that can guarantee each bipolar transistor Q1～Qn opposing environment temperature stably worked.
On the other hand, import base terminal B1～Bn of each bipolar transistor Q1～Qn by the 1st impedance circuit Z1～Zn from the high-frequency signal of signal input terminal RFIN input.
In the 6th execution mode, concerning high frequency, ((k=1～n) and base bias provide the resistance R Bk that connects between the terminal VB, and (two ends of k=1～n) are to (high fdrequency component of k=1～n) forms bypass via the 2nd impedance circuit ZZ and the 1st impedance circuit Zk for the base terminal Bk of k=1～n) at each bipolar transistor Qk.Therefore, (part of the alternating current component of the base current of k=1～n) is assigned to above-mentioned bypass to flow to above-mentioned resistance R Bk.Therefore, actual effect is can suppress above-mentioned resistance R Bk (increase of the pressure drop on the k=1～n) can suppress the gain compression as the problem of above-mentioned conventional example, makes the power amplifier can low distortion work.
In addition, in the 6th execution mode, 1 the 2nd impedance circuit ZZ and n the 1st an impedance circuit Zk (k=1～n) to n the resistance R Bk (k=1～n) bypass of formation high fdrequency component.In the case, by changing passing through phase place or, also can adjusting the current waveform among the base terminal B1～Bn that is injected into each bipolar transistor Q1～Qn of signal in each bypass by amplitude.In the 6th execution mode, in above-mentioned each bypass, be provided with 2 impedance circuit ZZ, Zk (k=1～n), so by these 2 impedance circuit ZZ, Zk (k=1～n), can improve the degree of freedom that the current waveform that is injected among each base terminal B1～Bn is adjusted.
Wherein, in the used transmit power amplifier of portable phone or WLAN communicators such as (local area network (LAN)s), for the output that obtains stipulating, as the 6th execution mode, a plurality of bipolar transistors that generally are connected in parallel carry out amplification work.Therefore, the power amplifier of the 6th execution mode is to use the preferred implementation under the situation of these purposes.
(the 7th execution mode)
Then, Fig. 7 illustrates the 7th execution mode of power amplifier of the present invention.The 7th execution mode be aforementioned the 6th execution mode more specifically and also simpler execution mode.In the 7th execution mode, the n among Fig. 6 impedance circuit Z1～Zn is made of n capacitor C1～Cn, and 1 the 2nd impedance circuit ZZ is made of 1 capacitor Cax.
According to the power amplifier of the 7th execution mode, can constitute the simple circuit configuration of the 1st, the 2nd impedance circuit with n capacitor C1～Cn, 1 capacitor Cax, same with aforementioned the 6th execution mode, can realize thermally-stabilised work and low distortion work simultaneously.
(the 8th execution mode)
Then, Fig. 8 illustrates the 8th execution mode of power amplifier of the present invention.The 8th execution mode is replaced into the series circuit that this capacitor Cax and resistance R ax are connected in series and form with the capacitor Cax of aforementioned the 7th execution mode, and this series circuit constitutes the 2nd impedance circuit.
In the 8th execution mode, can adjust by the resistance value of 1 resistance R ax and flow through n the resistance R Bk (alternating current component of the base current of k=1～n) respectively.Therefore,, compare, can suppress the gain compression of power amplifier accurately with the 7th execution mode according to the 8th execution mode.
(the 9th execution mode)
Then, Fig. 9 illustrates the 9th execution mode of power amplifier of the present invention.The 9th execution mode comprises n grounded emitter type bipolar transistor Q1～Qn.Collector terminal Co1～Con of this n grounded emitter type bipolar transistor Q1～Qn is connected on the signal output terminal RFOUT.
Be connected with the 1st the 1st impedance circuit Z1 between the base terminal B1 of the 1st grounded emitter type bipolar transistor Q1 in this n grounded emitter type bipolar transistor Q1～Qn and the signal input terminal RFIN.In addition, provide between the terminal VB, be connected in parallel to the 1st resistance R B1 and the 1st the 2nd impedance circuit Zx1 at aforementioned base terminal B1 and base bias.
Equally, at k grounded emitter type bipolar transistor Qk (the base terminal Bk of k=2～n) (k=2～n) and be connected with k the 1st impedance circuit Zk (k=2～n) between the signal input terminal RFIN.In addition, provide between the terminal VB, be connected in parallel to k resistance R Bk and k the 2nd impedance circuit Zxk (k=2～n) at aforementioned base terminal Bk and base bias.
Above-mentioned the 1st grounded emitter type bipolar transistor Q1, the 1st impedance circuit Z1, resistance R B1 and the 2nd impedance circuit Zx1 constitute the 1st enlarging section V1, and above-mentioned k grounded emitter type bipolar transistor Qk, the 1st impedance circuit Zk, resistance R Bk and the 2nd impedance circuit Zxk constitute k enlarging section Vk.Therefore, in the 9th execution mode, comprise that by n grounded emitter type bipolar transistor Q1～Qn, n resistance R B1～RBn, n the 1st impedance circuit Z1～Zn and n n enlarging section V1～Vn that the 2nd impedance circuit Zx1～Zxn constitutes this n enlarging section V1～Vn is connected in parallel in signal output terminal RFOUT and signal input terminal RFIN, base bias provide between the terminal VB.
In the 9th execution mode, (2 terminals P xak, the Pxbk of k=1～n) (are open-circuit condition to DC component between k=1～n), and are conducting to alternating current component said n the 2nd impedance circuit Zxk.
Therefore, in the 9th execution mode, concerning direct current, base bias provides terminal VB and each bipolar transistor Qk, and (the base terminal Bk of k=1～n) (has only resistance R Bk (k=1～n) between the k=1～n).Therefore, in the 9th execution mode, can (pressure drop on the k=1～n) suppresses base current and rises with temperature and increase by above-mentioned resistance R Bk.Therefore, consequently, (increase of the collector current of k=1～n) is stably worked so can guarantee the variation or the spontaneous heating of transistor Q1～Qn opposing environment temperature can to suppress each bipolar transistor Qk.
On the other hand, import base terminal B1～Bn of each bipolar transistor Q1～Qn by n the 1st impedance circuit Z1～Zn from the high-frequency signal of signal input terminal RFIN input.
In addition, in this embodiment, concerning high frequency,, the high fdrequency component via the 2nd impedance circuit Zx1～Zxn is formed bypass at the two ends that base terminal B1～Bn and the base bias of each bipolar transistor Q1～Qn provides the resistance R B1～RBn that connects between the terminal VB.Therefore, the part of alternating current component that flows to the base current of above-mentioned resistance R B1～RBn is assigned to above-mentioned bypass, so actual effect is to suppress the increase of the pressure drop on above-mentioned resistance R B1～RBn, can suppress gain compression, make the power amplifier can low distortion work.
In the used transmit power amplifier of communicators such as portable phone or WLAN, for the output that obtains stipulating, a plurality of bipolar transistors that generally are connected in parallel carry out amplification work.Therefore, the power amplifier of the 9th execution mode is to use the preferred implementation under the situation of these purposes.
(the 10th execution mode)
Then, Figure 10 illustrates the 10th execution mode of power amplifier of the present invention.The 10th execution mode be aforementioned the 9th execution mode more specifically and also an example of simpler execution mode.That is, in the 10th execution mode, the 2nd impedance circuit Zx1～Zxn among Fig. 9 is made of capacitor Cx1～Cxn, and the 1st impedance circuit Z1～Zn is made of capacitor C1～Cn.
According to the 10th execution mode, can realize thermally-stabilised work and low distortion work simultaneously with this simple structure.
(the 11st execution mode)
Then, Figure 12 illustrates the 11st execution mode of the present invention.The power amplifier of the 11st execution mode provides terminal VB and base voltage that parts are provided in the base bias of the power amplifier Amp1 identical with the power amplifier Amp of above-mentioned the 1st execution mode shown in Figure 1---and base voltage provides and is connected with variable impedance circuit 122 between the circuit 121.That is, in the 11st execution mode, provide with the base stage B of bipolar transistor Q1 and base voltage in the amplification of above-mentioned power amplifier Amp1 (with reference to Fig. 1 and Figure 12) to be connected with variable impedance circuit 122 between the circuit 121.
The impedance of above-mentioned variable impedance circuit 122 depends on the current value that flows through this variable impedance circuit 122.That is, by the existence of this variable impedance circuit 122, when the electric current that provides circuit 121 to provide from aforementioned base voltage increased along with the increase of input signal power, base bias provided terminal VB and base voltage to provide the impedance between the circuit 121 to reduce.Therefore, when the signal power of the input signal in the base stage B that is input to above-mentioned amplification usefulness bipolar transistor Q1 increased, the pressure drop on the above-mentioned variable impedance circuit 122 reduced, so can further suppress the distortion of power amplifier.
In addition, above-mentioned variable impedance circuit 122 is for example realized by waiting as the base-emitter junction of the diode of variable impedance element, bipolar transistor or base-collector junction.These variable impedance elements have the characteristic of the temperature of depending on, so the temperature characterisitic that the above-mentioned variable impedance element that superposes on the temperature characterisitic of amplifying with base-emitter junction of bipolar transistor Q1 has.In the past, owing to this reason, base current rose with temperature and increased more significantly, became the main cause that causes the work of power amplifier thermally labile.In contrast, in the 11st execution mode, the pressure drop on the resistance R B of Fig. 1 that can be by constituting amplifier Amp1 suppresses base current rises with temperature and increases, even and additional this resistance R B also can realize the low distortion work of power amplifier.
(the 12nd execution mode)
Then, Figure 13 illustrates the 12nd execution mode.In the 12nd execution mode variable impedance circuit 122 in the 11st execution mode shown in Figure 12 become circuit structure variable impedance circuit 132 more specifically.
In the structure example of the 12nd execution mode, variable impedance element is diode Dx.This diode Dx is connected base voltage provides parts---and base voltage provides circuit 121 and base bias to provide between the terminal VB, and its forward points to base bias terminal VB is provided.Provide at this diode Dx and base voltage to be connected with resistance R x1 between the circuit 121, between the tie point Px and ground of this diode Dx and resistance R x1, be connected in series with resistance R x2 and capacitor Cx.
This resistance R x1, Rx2, and capacitor Cx be used to setover and adjust and the adjustment of variableimpedance amount, resistance value, the capacitance of each element (resistance R x1, Rx2 and capacitor Cx) are suitably set.
(the 13rd execution mode)
Then, Figure 14 illustrates the 13rd execution mode.The 13rd execution mode becomes circuit structure variable impedance circuit 142 more specifically with the variable impedance circuit 122 in the 11st execution mode shown in Figure 12.
In the structure of the 13rd execution mode, variable impedance element is made of base-emitter junction of bipolar transistor Qx.The emitter of this bipolar transistor Qx is connected base bias and provides on the terminal VB, and collector electrode is connected base voltage through resistance R x1 parts are provided---and base voltage provides on the circuit 121.In addition, the base stage of this bipolar transistor Qx is connected on the above-mentioned collector electrode.
The tie point Px1 of above-mentioned collector electrode and resistance R x1 is connected on the tie point Px2 of above-mentioned collector electrode and base stage, between this tie point Px2 and ground, is connected in series with resistance R x2 and capacitor Cx.
This resistance R x1, Rx2, and capacitor Cx be used to setover and adjust and the adjustment of variableimpedance amount, resistance value, the capacitance of each element (Rx1, Rx2 and Cx) are suitably set.
(the 14th execution mode)
Then, Figure 15 illustrates the 14th execution mode.The 14th execution mode comprises that the base voltage of the 11st execution mode that replaces Figure 12 provides the 1st base voltage of circuit 121 to provide circuit 151 and the 2nd base voltage that circuit 152 is provided.In addition, in the 14th execution mode, comprise variable impedance circuit 153, it replaces the variable impedance circuit 122 of Figure 12.
In the 14th execution mode, variable impedance element is bipolar transistor Qx.The emitter of this bipolar transistor Qx is connected base bias and provides on the terminal VB, and collector electrode is connected the 2nd base voltage and provides on the circuit 152.In addition, the base stage of this bipolar transistor Qx is connected the 1st base voltage via resistance R x11 provides on the circuit 151.In addition, between the tie point Px11 and ground of aforementioned base and resistance R x11, be connected in series with resistance R x22 and capacitor Cxx.
In structure example shown in Figure 15, variable impedance element is made of base-emitter junction of bipolar transistor Qx, but be with the difference of the structure example of Figure 14, the base stage of bipolar transistor Qx is connected the 1st base voltage and provides on the circuit 151, and collector electrode is connected the 2nd base voltage and provides on the circuit 152.In the 14th execution mode, to base bias provide electric current that terminal VB provides can collector electrode by bipolar transistor Qx1 on direct-connected the 2nd base voltage provide circuit 152 to provide.Therefore, provide the ability height of base current, the gain compression in the time of can suppressing high output to the power amplifying transistor Q1 shown in Figure 1 of power amplifier Amp1.
Wherein, in the 11st～the 14th execution mode of Figure 12～shown in Figure 15, as power amplifier Amp1, comprise the 1st execution mode shown in Figure 1, but this power amplifier Amp1 also can be any power amplifier in the 2nd～the 10th execution mode of Fig. 2～shown in Figure 10.
From as can be known above, power amplifier of the present invention provides the resistance that connects between the terminal to be connected in parallel with respect to the base terminal and the base bias of grounded emitter bipolar transistor, is the bypass of the impedance circuit portion of conducting to the above-mentioned resistance of AC signal formation bypass for open circuit and to alternating current component to DC component.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from base bias.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned impedance circuit portion is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, in one embodiment,, the high fdrequency component via the 1st, the 2nd impedance circuit is formed bypass at the two ends that the base terminal and the base bias of bipolar transistor provides the resistance that connects between the terminal.Therefore, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from base bias.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, the impedance of at least one in the above-mentioned the 1st and the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component.So can suppress base current by above-mentioned ohmically pressure drop increases with the temperature rising.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, an execution mode comprises a plurality of enlarging sections that are made of above-mentioned grounded emitter bipolar transistor, above-mentioned resistance and above-mentioned the 1st impedance circuit, and a plurality of above-mentioned grounded emitter bipolar transistors are connected in parallel constitutes power amplifier.In the case, direct current is the 1st impedance circuit of open circuit or at least one bypass to the above-mentioned resistance of AC signal formation bypass in the 2nd impedance circuit.
According to this structure, the aforementioned base bias voltage provides the part of the alternating current component of the base current between the base terminal of terminal and each bipolar transistor to be assigned to above-mentioned bypass.Thus, actual effect is to suppress the increase of each ohmically pressure drop, and the gain compression that can suppress to see in the conventional example makes the power amplifier can low distortion work.
In addition, can suppress base current by each ohmically pressure drop and increase, so consequently, can suppress the increase of the collector current of each bipolar transistor, can realize work and low distortion work that heat is even and stable simultaneously with the temperature rising.
In addition, in one embodiment, above-mentioned impedance circuit portion has a terminal and is connected that the aforementioned base bias voltage provides on the terminal, another terminal is connected the 2nd impedance circuit on the aforementioned base terminal, and above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component.
Therefore, above-mentioned the 2nd impedance circuit constitutes the bypass of the above-mentioned resistance of direct bypass to AC signal.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, in one embodiment, comprise a plurality of enlarging sections that are made of above-mentioned grounded emitter bipolar transistor, above-mentioned resistance, above-mentioned the 1st impedance circuit and above-mentioned the 2nd impedance circuit, the 2nd impedance circuit that each enlarging section has is open circuit to DC component, and is conducting to alternating current component.
Therefore, above-mentioned the 2nd impedance circuit constitutes the bypass of the above-mentioned resistance of direct bypass to AC signal.Thus, provide the part of the alternating current component of the base current that terminal flows to above-mentioned resistance to be assigned to above-mentioned bypass from the aforementioned base bias voltage.Therefore, actual effect is to suppress the increase of above-mentioned ohmically pressure drop, can suppress above-mentioned gain compression, makes the power amplifier can low distortion work.
In addition, above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component, rises with temperature and increases so can suppress base current by above-mentioned ohmically pressure drop.Thus, consequently, the increase of collector current can be suppressed, thermally-stabilised work and low distortion work can be realized simultaneously.
In addition, in one embodiment, at least one in the above-mentioned the 1st or the 2nd impedance circuit has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.Therefore, can realize in the 1st or the 2nd impedance circuit at least one with simple circuit configuration.
In addition, in one embodiment, above-mentioned the 2nd impedance circuit has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.Therefore, can realize above-mentioned the 2nd impedance circuit with simple circuit configuration.
Claims (9)
1, a kind of power amplifier is characterized in that, comprising:
The grounded emitter bipolar transistor, its collector terminal is connected on the signal output terminal;
Resistance, the base terminal and the base bias that are connected above-mentioned grounded emitter bipolar transistor provide between the terminal; And
Impedance circuit portion provides the above-mentioned resistance between the terminal to be connected in parallel with respect to the base terminal and the aforementioned base bias voltage of above-mentioned grounded emitter bipolar transistor, and DC component is open circuit, and is conducting to alternating current component.
2, power amplifier as claimed in claim 1 is characterized in that,
Above-mentioned impedance circuit portion has:
The 1st impedance circuit, an one terminal is connected on the base terminal of above-mentioned grounded emitter bipolar transistor, and another terminal is connected on the signal input terminal; And
The 2nd impedance circuit, an one terminal is connected on the above-mentioned signal input terminal, and another terminal is connected the aforementioned base bias voltage and provides on the terminal;
In above-mentioned the 1st impedance circuit or above-mentioned the 2nd impedance circuit at least one is open circuit to DC component, and is conducting to alternating current component.
3, power amplifier as claimed in claim 2 is characterized in that,
Comprise a plurality of enlarging sections that constitute by above-mentioned grounded emitter bipolar transistor, above-mentioned resistance and above-mentioned the 1st impedance circuit;
In the 1st impedance circuit of above-mentioned a plurality of enlarging sections or above-mentioned the 2nd impedance circuit at least one is open circuit to DC component, and is conducting to alternating current component.
4, power amplifier as claimed in claim 1 is characterized in that,
Above-mentioned impedance circuit portion has:
The 1st impedance circuit, an one terminal is connected on the signal input terminal, and another terminal is connected on the base terminal of above-mentioned grounded emitter bipolar transistor; And
The 2nd impedance circuit, an one terminal is connected the aforementioned base bias voltage and provides on the terminal, and another terminal is connected on the aforementioned base terminal;
Above-mentioned the 2nd impedance circuit is open circuit to DC component, and is conducting to alternating current component.
5, power amplifier as claimed in claim 4 is characterized in that,
Comprise a plurality of enlarging sections that constitute by above-mentioned grounded emitter bipolar transistor, above-mentioned resistance, above-mentioned the 1st impedance circuit and above-mentioned the 2nd impedance circuit;
Above-mentioned the 2nd impedance circuit of above-mentioned a plurality of enlarging sections is open circuit to DC component, and is conducting to alternating current component.
6, as claim 2 or 3 described power amplifiers, it is characterized in that,
In the above-mentioned the 1st or the 2nd impedance circuit at least one has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.
7, as claim 4 or 5 described power amplifiers, it is characterized in that,
Above-mentioned the 2nd impedance circuit has capacitor, by this capacitor, DC component is open circuit, and is conducting to alternating current component.
8, power amplifier as claimed in claim 1 is characterized in that,
Comprise that base voltage provides parts;
Provide terminal and aforementioned base voltage to provide between the parts at the aforementioned base bias voltage, be connected with variable impedance circuit.
9, power amplifier as claimed in claim 8 is characterized in that,
Above-mentioned variable impedance circuit comprises diode or bipolar transistor.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002051600 | 2002-02-27 | ||
| JP051600/2002 | 2002-02-27 | ||
| JP051600/02 | 2002-02-27 | ||
| JP2002273169A JP4287116B2 (en) | 2002-02-27 | 2002-09-19 | Power amplifier |
| JP273169/02 | 2002-09-19 | ||
| JP273169/2002 | 2002-09-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100736379A Division CN1838527B (en) | 2002-02-27 | 2003-02-21 | Power amplifier |
Publications (2)
| Publication Number | Publication Date |
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| CN1441545A true CN1441545A (en) | 2003-09-10 |
| CN1255936C CN1255936C (en) | 2006-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100736379A Expired - Lifetime CN1838527B (en) | 2002-02-27 | 2003-02-21 | Power amplifier |
| CN 03106303 Expired - Lifetime CN1255936C (en) | 2002-02-27 | 2003-02-21 | Power amplifier |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100736379A Expired - Lifetime CN1838527B (en) | 2002-02-27 | 2003-02-21 | Power amplifier |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4287116B2 (en) |
| CN (2) | CN1838527B (en) |
| TW (1) | TW580786B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101053151B (en) * | 2004-11-29 | 2012-01-25 | 株式会社村田制作所 | Semiconductor device and power amplifier |
| CN101677229B (en) * | 2008-09-18 | 2013-02-27 | 夏普株式会社 | Power amplifier, method for controlling power amplifier, and wireless communication apparatus |
| CN108429541A (en) * | 2017-02-15 | 2018-08-21 | 立积电子股份有限公司 | Predistorter for compensating for linearity of amplifier |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4155326B2 (en) | 2004-11-29 | 2008-09-24 | 株式会社村田製作所 | Semiconductor device and power amplifier |
| WO2006057104A1 (en) * | 2004-11-29 | 2006-06-01 | Murata Manufacturing Co., Ltd. | Semiconductor device and power amplifier |
| JP4142660B2 (en) | 2005-03-23 | 2008-09-03 | 松下電器産業株式会社 | High frequency power amplifier |
| JP2006325096A (en) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | High-frequency power amplifier |
| JP4535983B2 (en) * | 2005-10-24 | 2010-09-01 | パナソニック株式会社 | High frequency power amplifier |
| JP4699204B2 (en) * | 2005-12-28 | 2011-06-08 | 新日本無線株式会社 | High frequency amplifier circuit |
| JP4332570B2 (en) | 2006-09-29 | 2009-09-16 | シャープ株式会社 | Bias circuit and power amplifier |
| JP2008147869A (en) * | 2006-12-07 | 2008-06-26 | Matsushita Electric Ind Co Ltd | Semiconductor amplifier circuit |
| CN101453196B (en) * | 2007-12-03 | 2011-01-12 | 联阳半导体股份有限公司 | Amplifier circuit |
| JP2010124433A (en) | 2008-11-21 | 2010-06-03 | Panasonic Corp | High-frequency power amplifier |
| JP5253221B2 (en) | 2009-02-17 | 2013-07-31 | キヤノン株式会社 | Image processing apparatus, image processing method, and program |
| CN101924522A (en) * | 2010-09-07 | 2010-12-22 | 沈阳中科微电子有限公司 | Radio-frequency power amplifier with adaptive linear biasing circuit |
| CN103095225A (en) * | 2011-11-03 | 2013-05-08 | 中国科学院微电子研究所 | Power amplifying transistor circuit and method for improving stability thereof |
| US9768729B2 (en) | 2014-11-12 | 2017-09-19 | Murata Manufacturing Co., Ltd. | Power amplifier |
| KR101793237B1 (en) * | 2016-08-19 | 2017-11-02 | 부산대학교 산학협력단 | Linear HBT based power amplifier using parallel-combined transistors with IMD3 cancellation |
| JP2018142833A (en) | 2017-02-27 | 2018-09-13 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020027992A (en) | 2018-08-10 | 2020-02-20 | 株式会社村田製作所 | Power amplifier circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3668099B2 (en) * | 2000-04-28 | 2005-07-06 | シャープ株式会社 | Power amplifier |
| JP2001332935A (en) * | 2000-05-19 | 2001-11-30 | Fujitsu Ltd | Microwave amplifier |
-
2002
- 2002-09-19 JP JP2002273169A patent/JP4287116B2/en not_active Expired - Fee Related
-
2003
- 2003-01-28 TW TW92101829A patent/TW580786B/en not_active IP Right Cessation
- 2003-02-21 CN CN2006100736379A patent/CN1838527B/en not_active Expired - Lifetime
- 2003-02-21 CN CN 03106303 patent/CN1255936C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101053151B (en) * | 2004-11-29 | 2012-01-25 | 株式会社村田制作所 | Semiconductor device and power amplifier |
| CN101677229B (en) * | 2008-09-18 | 2013-02-27 | 夏普株式会社 | Power amplifier, method for controlling power amplifier, and wireless communication apparatus |
| CN108429541A (en) * | 2017-02-15 | 2018-08-21 | 立积电子股份有限公司 | Predistorter for compensating for linearity of amplifier |
| CN108429541B (en) * | 2017-02-15 | 2021-09-17 | 立积电子股份有限公司 | Predistorter for compensating for linearity of amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| TW580786B (en) | 2004-03-21 |
| CN1838527A (en) | 2006-09-27 |
| CN1255936C (en) | 2006-05-10 |
| CN1838527B (en) | 2010-09-29 |
| JP4287116B2 (en) | 2009-07-01 |
| JP2003324325A (en) | 2003-11-14 |
| TW200303647A (en) | 2003-09-01 |
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