CN1434496A - Method for assembling QFN type image sensor and structure thereof - Google Patents
Method for assembling QFN type image sensor and structure thereof Download PDFInfo
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- CN1434496A CN1434496A CN03104413A CN03104413A CN1434496A CN 1434496 A CN1434496 A CN 1434496A CN 03104413 A CN03104413 A CN 03104413A CN 03104413 A CN03104413 A CN 03104413A CN 1434496 A CN1434496 A CN 1434496A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This invention relates to a building method and its structure for a QFN type image sensor including molding a colloid wall surrouding a metal carrier, then joining sticking crystal and wire in the carrier opposite the wall, after that, filling transparent colloid in the wall space, sealing a chip in it to be cut into image sensor meeting the trend of minification for products and using the element structure and chip loading pad and pin bottom surface form concave to provide a design of filling transparent colloid in it to strengthen the connecting force with the carrier and protect it from moisture.
Description
Technical field
The present invention relates to a kind of QFN type Image Sensor construction method and structure thereof, especially finger is a kind of does not have overhanging pin-type (Quad Flat No-lead at quad flat, QFN) construction method of Image Sensor and structure thereof are adorned the design that is proposed, make it can be applicable to structure and adorn undersized Image Sensor product, reduce cost, and make this component products can promote functions such as sealing.
Background technology
The structure dress mode of early stage Image Sensor, the substrate that promptly uses the ceramic material sintering to form, and chip is attached in the default depression of this substrate, constitute with routing engagement means pin that each contact on the chip is corresponding with substrate again and electrically connect, afterwards, with clear glass cemented on substrate with respect to the chip top, with the chip sealing in interior, by this, this Image Sensor is welded on the circuit board, can controlled purposes as image capture.
The Image Sensor that aforementioned use ceramic substrate is made because of being not easy to a large amount of productions, and has the higher shortcoming of manufacturing cost, adopts the plastics structure process so the manufacturing of Image Sensor now changes mostly.The design of known now Image Sensor construction method and assembling structure thereof, generally announce " encapsulating structure of image sensing chip and method for packing thereof " patent of invention case those disclosed herein No. 461059 as Taiwan, please cooperate that to consult specification shown in Figure 4, its construction method mainly uses the bottom surface to be adhesive with the metallic carrier (50) (shown in Fig. 4 a) of adhesive tape (51), this carrier (50) has bearing pads (52) and is spaced in the pin (53) of bearing pads (52) periphery, in addition the tool (80) of Q-RING round being positioned over adhesive tape (51) goes up corral carrier (50) and defines (54) between element region (shown in Fig. 4 b), secondly, the bearing pads (52) that chip (60) is sticked in carrier (50) is gone up (shown in Fig. 4 c), and be connected between each weld pad of chip (60) and its corresponding pin (53) with lead (61), again transparent colloid (70) is poured into the interior coating chip of tool (80) (60) (shown in Fig. 4 e), and filling is between carrier (50) adjacent leads (53) and in the gap between bearing pads (52) and pin (53), after treating that transparent colloid (70) solidifies, remove the adhesive tape (51) of carrier (50) bottom surface, take off tool (80), finish the structure dress of this Image Sensor.
The construction method design of aforementioned known Image Sensor, though by the means of directly pouring into transparent colloid coating chip and metallic carrier, in the hope of the purpose that reaches volume production, reduces cost, yet, component structure behind this construction method and the structure dress thereof still has some problems and waits to overcome in enforcement and use, wherein:
1, the Image Sensor product is towards the development trend of size downsizing at present, this Image Sensor product is answered designing requirement, its size more and more little (as 5mm*5mm or with inferior), the chip size size of this element internal is quite approaching with structure dress back component products size, make the chip outer rim very short to the distance of transparent colloid outer rim, and aforementioned construction method needs earlier tool to be fixed in to define between element region on the carrier, stick brilliant again, steps such as routing joint and encapsulating, wherein when routing engages, for avoiding the start termination bump tool of routing facility, and cause element or facility to damage, so need to keep enough activity spaces, make chip can't go reduction again with respect to size intermarginal in the tool, the structure dress that causes this construction method can't be applied to miniaturization Image Sensor product is made.
2, the Image Sensor product can have different designs because of client's demand at present, and for this reason, this tool promptly need cooperate each component products customized respectively, causes the increase of equipment cost.
3, this construction method between the defined element region of tool in the perfusion transparent colloid, because of encapsulating and after treating that transparent colloid solidifies, this tool is essential to be taken out, therefore, engaging force between tool and transparent colloid must be considered, thus need further tool to be done special surface treatment, to fall the engaging force between tool and the transparent colloid, thus, more increase the manufacturing cost of tool.
4, in the image sensor component structure made from this construction method, type body because of its metallic carrier same thickness, its pin and bearing pads are smooth lamellar body, so its pin, bearing pads only its flat surface of mat are pasted with transparent colloid, its engaging force is relatively poor, and because of the difference of thermal coefficient of expansion to each other, be subjected under the thermal environment, easily produce between this pin, bearing pads and transparent colloid and peel off phenomenon, cause aqueous vapor easily to peel off the position and invade, and influence the reliability of this Image Sensor to chip from this.
Summary of the invention
In order to overcome aforementioned Image Sensor construction method and structural problem, the object of the present invention is to provide a kind of innovation Image Sensor construction method and structure, make it aspect the component configuration processing procedure, the development trend that can meet the downsizing of semiconductor product size, and reduce cost, then can promote engaging force between carrier and transparent colloid in configuration aspects, to promote the reliability of component products.
For reaching above-mentioned purpose, Image Sensor construction method proposed by the invention is place, the periphery on metallic carrier molding colloid embankment wall mainly, unhinderedly stick in respect to embankment wall after crystalline substance and routing engage in carrier again, liquid transparent colloid is poured in the colloid embankment wall in the space, the chip sealing in interior, is cut into the Image Sensor finished product again.
Image Sensor assembling structure proposed by the invention is the glutinous chip of establishing on the chip bearing pad of metallic carrier mainly, each contact of this chip is connected with lead with being positioned between the corresponding pin of chip bearing pad periphery, carrier be provided with transparent colloid with the chip sealing in interior, wherein, this carrier forms recess in the bottom surface, end that rebasing periphery of chip bearing and pin face bearing pads, recess and for the transparent colloid filling wherein.
The present invention can reach following characteristics by the aforementioned techniques design for scheme, wherein:
1. aspect construction method:
A, the present invention are when glutinous crystalline substance and routing engagement step are carried out, and its scope of activities periphery does not have and highly plays thing restriction, thus the structure dress manufacturing that makes the present invention can use the small-sized component product, the development trend of equivalence element size downsizing.
B, the present invention do not use tool, are not subjected to the restriction of various product, and can reduce equipment cost.
C, with above-mentioned described, the present invention does not use tool, do not have to exempt to the engaging force that reduces between tool and transparent colloid and makes the problem that special surface is handled.
2, aspect assembling structure:
In the designed assembling structure of a, the present invention, can utilize the chip bearing pad and the pin bottom surface of carrier to form recess, transparent colloid filling design wherein is provided, promotes the engaging force between transparent colloid and carrier, avoid carrier and transparent colloid to produce situation about peeling off because of engaging force is not good.
B, the present invention utilize the chip bearing pad of carrier and pin bottom surface to form recess, transparent colloid filling design wherein is provided, still can prolong aqueous vapor and may invade path and degree of difficulty, reach the effect that prevents that aqueous vapor from invading, improve the reliability of Image Sensor to chip.
Description of drawings
Figure 1A～H is the schematic flow sheet of construction method of the present invention.
Fig. 2 is the assembling structure schematic diagram of Image Sensor of the present invention.
Fig. 3 is the schematic top plan view of Image Sensor of the present invention.
Fig. 4 a～g is the structure dress schematic flow sheet of prior art Image Sensor.
Symbol description among the figure
(10) carrier (11) adhesive tape
(12) cell (13) bearing pads
(131) recess (14) pin
(141) recess (142) depression
(15) external series gap
(20) colloid embankment wall
(30) chip (31) lead
(40) transparent colloid
(50) carrier (51) adhesive tape
(52) bearing pads (53) pin
(54) between element region
(60) chip (61) lead
(70) transparent colloid
(80) tool
Embodiment
The specific embodiment of relevant QFN type Image Sensor construction method of the present invention please cooperate and consult shown in Figure 1ly, and it includes following steps:
The metallic carrier (10) that provides a bottom surface to be adhesive with adhesive tape (11), shown in Figure 1A, has array cell (12) on this carrier (10), each cell (12) comprises that chip bearing pad (13) and plural number are spaced in the pin (14) of chip bearing pad (13) periphery, this carrier (10) utilizes the means that etch partially to form recess (131) (141) in the place, bottom surface, end that bearing pads (13) bottom surface periphery and pin (14) face bearing pads (13) again, in addition can between adjacent elements unit (12) between the corresponding pin (14) that links to each other the place, bottom surface utilize the means that etch partially to form the depression (142) that reduces thickness;
In the positive peripheral molding colloid embankment wall of carrier (10) (20), shown in Figure 1B, each cell (12) is included in interior;
Chip (30) is located on the chip bearing pad (13) of each cell of carrier (10) (12), shown in Fig. 1 C so that sensing area mode up is glutinous;
With lead (31) be connected in chip (30) go up each contact corresponding with it pin (14) between, constitute electric connection, shown in Fig. 1 D, at this moment, because of the obstruct of the no protrusion of lead link position periphery, so lead (31) Connection Step can not carried out limitedly smoothly;
Liquid transparent colloid (40) is poured into carrier (10) upward to be solidified in the space with respect to colloid embankment wall (20) inboard, shown in Fig. 1 E, in chip (30) is coated on, and be filled between carrier (10) adjacent leads (14) and pin (14) and bearing pads (13) between the gap in;
Tear the adhesive tape (11) that sticks in carrier (10) bottom surface off, shown in Fig. 1 F; And
Be partitioned into the Image Sensor finished product that each comprises chip (30) with the cutting means, shown in Fig. 1 G, H, wherein utilize the default depression (142) in carrier (10) bottom surface between the pin (14) that correspondence between adjacent elements unit (12) links to each other to reduce its thickness, be beneficial to the carrying out of cutting.
As Fig. 2, shown in Figure 3, the present invention comprises by the made Image Sensor structure of aforementioned construction method:
One metallic carrier (10), it has chip bearing pad (13) and plural number is spaced in the pin (14) of chip bearing pad (13) periphery, have external series gap (15) between this chip bearing pad (13) and pin (14) and between adjacent leads (14), the bottom surface, end that this bearing pads (13) bottom surface periphery and pin (14) face bearing pads (13) forms recess (131) (141);
One chip (30) is located on the chip bearing pad (13) so that sensing area is glutinous up, and each contact is connected to corresponding pin place with lead on it; And
One transparent colloid (40), be fixedly arranged on metallic carrier (10) and go up coating chip (30), this transparent colloid, outer rim is concordant with pin (14) outer rim, and be filled in the external series gap (15) and recess (131) (141) of carrier (10), promote the engaging force between transparent colloid (40) and carrier (10), and prolong aqueous vapor and may invade to the path and the degree of difficulty of chip (30) and reach the effect that prevents the aqueous vapor intrusion, and constitute the good Image Sensor of a reliability.
This Image Sensor can utilize the surface mount technology weldering to be located on the circuit board, make the circuit on its pin (14) and the circuit board constitute electric connection, by this, make this Image Sensor can controlledly make its chip (30) sensing area see through transparent colloid (40) and carry out the effect of image capture.
In aforementioned construction method and architectural feature explanation, when learning: the construction method design of its innovation of the present invention, can stick operations such as crystalline substance and routing joint on carrier can unhinderedly carry out, make this construction method meet the product structure reload request of downsizing day by day, and the component configuration structure of utilizing this construction method to make, and carrier chip bearing pads and pin bottom surface formation recess, transparent colloid filling design wherein is provided, promote the engaging force between transparent colloid and carrier and prevent the effect that aqueous vapor is invaded, improve the reliability of this Image Sensor, it is the design that a tool has industrial utilization, therefore, the present invention meets the important document of patent of invention, and mere formality is filed an application in accordance with the law.
Claims (4)
1. a QFN type Image Sensor construction method is characterized in that, may further comprise the steps:
The metallic carrier that provides a bottom surface to be adhesive with adhesive tape has the array cell on this carrier, each cell comprises that chip bearing pad and plural number are spaced in the pin of chip bearing pad periphery;
In the place, periphery of metallic carrier molding colloid embankment wall, each cell is included in interior;
Be located on the chip bearing pad of each cell of carrier chip is glutinous, continuously be connected between the pin that each contact is corresponding with it on the chip with lead;
Liquid transparent colloid is poured on the carrier with respect to solidifying in the space in the colloid embankment wall, in chip is coated on, and is filled on the carrier between adjacent leads and in the gap between pin and bearing pads;
Tear the adhesive tape that sticks in the carrier bottom surface off, be partitioned into the Image Sensor finished product that each comprises chip with the cutting means again.
2. QFN type Image Sensor construction method as claimed in claim 1 is characterized in that, utilizes the means that etch partially to form recess in the place, bottom surface, end that carrier bearing pads bottom surface periphery and pin face bearing pads, and to make recess be that transparent colloid is filled wherein.
3. QFN type Image Sensor construction method as claimed in claim 1 or 2 is characterized in that, utilizes the means that etch partially place, bottom surface between the pin that correspondence between carrier adjacent elements unit links to each other to form the depression that reduces thickness.
4. a QFN type Image Sensor assembling structure is characterized in that, comprising:
One metallic carrier, it has the chip bearing pad and plural number is spaced in the pin of chip bearing pad periphery, between this chip bearing pad and pin and have external series gap between adjacent leads, the bottom surface, end that this bearing pads bottom surface periphery and pin face bearing pads forms recess;
One chip, glutinous being located on the chip bearing pad, each contact is connected to corresponding pin place with lead on it; And
One transparent colloid is fixedly arranged on coating chip on the metallic carrier, and is filled in the external series gap and recess of carrier, and the transparent colloid outer rim is concordant with the pin outer rim, and constitutes an Image Sensor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031044131A CN1214461C (en) | 2003-02-13 | 2003-02-13 | Method for assembling QFN type image sensor and structure thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031044131A CN1214461C (en) | 2003-02-13 | 2003-02-13 | Method for assembling QFN type image sensor and structure thereof |
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| CN1434496A true CN1434496A (en) | 2003-08-06 |
| CN1214461C CN1214461C (en) | 2005-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031044131A Expired - Fee Related CN1214461C (en) | 2003-02-13 | 2003-02-13 | Method for assembling QFN type image sensor and structure thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897018B (en) * | 2005-07-15 | 2010-05-26 | 威刚科技股份有限公司 | Method for packaging memory card device |
| CN103928353A (en) * | 2014-04-14 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | Non-outer-pin packaging structure and manufacturing method and wire frame of non-outer-pin packaging structure |
| WO2017156829A1 (en) * | 2016-03-17 | 2017-09-21 | 深圳市华星光电技术有限公司 | Substrate packaging method |
-
2003
- 2003-02-13 CN CNB031044131A patent/CN1214461C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897018B (en) * | 2005-07-15 | 2010-05-26 | 威刚科技股份有限公司 | Method for packaging memory card device |
| CN103928353A (en) * | 2014-04-14 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | Non-outer-pin packaging structure and manufacturing method and wire frame of non-outer-pin packaging structure |
| WO2017156829A1 (en) * | 2016-03-17 | 2017-09-21 | 深圳市华星光电技术有限公司 | Substrate packaging method |
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| Publication number | Publication date |
|---|---|
| CN1214461C (en) | 2005-08-10 |
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Assignee: Guangzhou Hailin Electronic Technology Co., Ltd. Assignor: UPI Semiconductor Corp Contract fulfillment period: 2009.8.10 to 2014.8.9 contract change Contract record no.: 2009990001180 Denomination of invention: Method for assembling QFN type image sensor and structure thereof Granted publication date: 20050810 License type: Exclusive license Record date: 20091023 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.8.10 TO 2014.8.9; CHANGE OF CONTRACT Name of requester: GUANGZHOU CITY HAILIN ELECTRONIC TECHNOLOGY DEVELO Effective date: 20091023 |
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Granted publication date: 20050810 Termination date: 20170213 |
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