CN1431775A - 表面声波滤波器 - Google Patents

表面声波滤波器 Download PDF

Info

Publication number
CN1431775A
CN1431775A CN03101075A CN03101075A CN1431775A CN 1431775 A CN1431775 A CN 1431775A CN 03101075 A CN03101075 A CN 03101075A CN 03101075 A CN03101075 A CN 03101075A CN 1431775 A CN1431775 A CN 1431775A
Authority
CN
China
Prior art keywords
acoustic wave
surface acoustic
mentioned
recess
wave filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN03101075A
Other languages
English (en)
Other versions
CN1242552C (zh
Inventor
松田重俊
甲斐升司
近藤秀树
井上明彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of CN1431775A publication Critical patent/CN1431775A/zh
Application granted granted Critical
Publication of CN1242552C publication Critical patent/CN1242552C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/0585—Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

本发明提供一种能够防止由于表面声波芯片的发热而引起温度过度上升的高可靠性的表面声波滤波器。本发明的表面声波滤波器，表面声波芯片(2)安装在多层基板(1)的凹部(1a)内，用密封板(4)覆盖该凹部(1a)，并在基板(1)的外表面设置了与表面声波芯片(2)导通的端面电极(3)，在与多层基板(1)的密封板(4)侧相反的侧面设置散热用的金属导体(7)，同时在基板(1)上设置一端与该金属导体(7)连接的通孔(8)，该通孔(8)的另一端与表面声波芯片(2)通过金属材料(例如导电性的粘接层9)连接。

Description

表面声波滤波器
技术领域
本发明涉及一种组合了利用压电基板上的表面声波(SurfaceAcoustic Wave：SAW)的电子元件的表面声波芯片的面安装型表面声波滤波器，特别涉及其散热对策。
背景技术
在发射高频信号的天线开关电路等中，选择通过特定频率的信号的表面声波滤波器近年被广泛用作发射用滤波器或接收用滤波器。
图3为相关的表面声波滤波器的以前的构造的剖视图，如该图所示，以前的表面声波滤波器主要用多层基板(LTCC)1、安装在该多层基板1的凹部1a内的表面声波芯片2、从多层基板1的侧面向底面延伸的端面电极3、接合在覆盖多层基板1的凹部1a位置的金属板等的密封板4构成。多层基板1为层叠由低温烧结陶瓷材料形成的印刷电路基板(green sheet)在1000℃以下烧成的构件，安装在图中没有示出的母板上。表面声波芯片2为在水晶等压电基板的表面形成规定的电极图案形成的构件，通过连线5与引线图案6连接。由于该引线图案6与端面电极3导通，因此表面声波芯片2能够通过端面电极3与外部电路电气连接。并且，表面声波芯片2的底面粘结固定在多层基板1的凹部1a的内底面，在凹部1a内填充了氮等惰性气体。
但是，在将表面声波滤波器用作天线开关电路的发射用滤波器时，由于用功率放大器放大了的发射信号被输入表面声波滤波器中，因此不能无视图3中的表面声波芯片2的发热。即，由于输入放大了的信号时表面声波芯片2产生不少焦耳热，如果持续发射状态，仅通过密封板4等散热不能充分抑制表面声波芯片2的温度上升。因此，在以前的用于发射用滤波器等的表面声波滤波器中，存在由于自身的发热引起温度过度上升而对表面声波芯片2的特性带来坏影响的可能，存在难以获得高可靠性的问题。
发明内容
本发明就是鉴于以前技术这样的实际情况，其目的是提供一种能够防止表面声波芯片发热引起温度过度上升的高可靠性的表面声波滤波器。
为了达到上述目的，本发明的表面声波滤波器包括：具有凹部、安装在母板上的基板，安装在该基板的上述凹部内的表面声波芯片，设置在包括上述基板的侧面的外表面上、与上述表面声波芯片导通的外部电极，和与上述基板结合、覆盖上述凹部的密封板；在与上述基板的上述密封板侧相反的面上设置散热用的金属导体，同时在上述基板上设置一端与该金属导体连接的通孔，该通孔的另一端与上述表面声波芯片通过金属材料连接。
这样大体构成的表面声波滤波器，由于表面声波芯片产生的焦耳热被通过通孔导向金属导体，因此能够使该金属导体具有散热片的功能。例如，在表面声波滤波器以金属导体侧为底面安装在母板上时，通过使该金属导体与母板的导体图案(接地用图案等)接触，能够通过该导体图案进行散热。而当表面声波滤波器以密封板侧为底面安装在母板上时，从金属导体直接向周围的空间散热。由此，由于即使表面声波芯片发出的热量多也能通过金属导体有效散发，因此不用担心表面声波芯片由于自身发热而引起温度过度上升，能够总是发挥稳定的性能。
在上述结构中，最好在上述基板的上述凹部的内底面设置由导电性粘接剂形成的粘接层，通过该粘接层将上述表面声波芯片固定在上述基板上，同时使上述通孔的上述另外一端与该粘接层连接。如果这样做，由于表面声波芯片产生的焦耳热迅速地传递给导电性粘接层，因此能够通过通孔及金属导体更加有效地进行散热。
附图说明
图1本发明的第1实施形态的表面声波滤波器的剖视图
图2本发明的第2实施形态的表面声波滤波器的剖视图
图3以前的表面声波滤波器的剖视图
具体实施方式
如果参照附图说明本发明的实施形态，图1为第1实施形态的表面声波滤波器的剖视图，与图3相对应的部分使用相同的附图标记。
图1所示的表面声波滤波器大体由以下部分构成：安装在母板10上的多层基板1，安装在该多层基板1的凹部1a内的表面声波芯片2，从多层基板1的侧面向底面延设的端面电极3，与多层基板1的上面结合、覆盖凹部1a的金属板等的密封板4，设置在多层基板1的底面上的金属导体7，设置在表面声波芯片2的底面与金属导体7之间的多个地方的通孔8。
多层基板1为层叠由低温烧结陶瓷材料形成的印刷电路基板、在1000℃以下烧结成的构件，在该多层基板1的凹部1a的内底面设置了由导电性粘接剂形成的粘接层9。该导电性粘接层9具有将表面声波芯片2固定在凹部1a内的功能和将表面声波芯片2产生的焦耳热传递给通孔8的功能。即，由于通孔8的上下端面分别与粘接层9和金属导体7连接，所以表面声波芯片2产生的焦耳热通过粘接层9从通孔8向金属导体7传递过去。并且，凹部1a内填充了氮等惰性气体。
表面声波芯片2为在水晶等压电基板的表面形成规定的电极图案的构件，通过连线5及引线结构6与端面电极3导通。因此，如果将该表面声波滤波器安装到母板10上、将端面电极3用焊锡焊到外部电路的焊锡接线座(图中没有示出)上，则表面声波芯片2通过端面电极3与外部电路电连接。
这样构成的表面声波滤波器以金属导体7侧为底面安装到母板10上，表面声波滤波器的金属导体7保持与在该母板10上预先形成的接地用图案11面接触的状态。因此，表面声波芯片2产生的焦耳热通过导电性粘接层9、通孔8和金属导体7向母板10的接地用图案11传递，有效地从表面积大的该接地用图案11散发。因此，将该表面声波滤波器作为天线开关电路的发射用滤波器使用时，即使在表面声波芯片2的发热量比较大的使用条件下，通过利用母板10的接地用图案11有效散热，也不用担心表面声波芯片2由于自身发热而使温度过度上升，总能够发挥稳定的性能。
图2为第2实施形态的表面声波滤波器的剖视图，与图1相对应的部分使用相同的附图标记。
本实施形态与上述第1实施形态的不同点为，表面声波滤波器以密封板4侧为底面安装在母板10上，其他的结构基本相同。表面声波滤波器这样以密封板4侧为底面安装在母板10上时，由于金属导体7保持在露出到外部空间的状态，因此表面声波芯片2产生的焦耳热能够通过该金属导体7有效地向周围的空间散发。
发明效果
本发明用以上说明的形态实施，起到以下叙述的效果：
由于表面声波芯片产生的焦耳热通过通孔向金属导体传递，因此能够使该金属导体具有进行有效散热的散热片的机能。因此，能够防止由于表面声波芯片的发热而使温度过度上升，能够提供高可靠性的表面声波滤波器。

Claims (2)

1.一种表面声波滤波器，其特征在于，包括：具有凹部、安装在母板上的基板；安装在该基板的上述凹部内的表面声波芯片；设置在包括上述基板的侧面的外表面上、与上述表面声波芯片导通的外部电极；和与上述基板结合、覆盖上述凹部的密封板；在与上述基板的上述密封板侧相反的面上发置散热用的金属导体，同时在上述基板上设置一端与该金属导体连接的通孔，该通孔的另一端与上述表面声波芯片通过金属材料连接。
2.如权利要求1所述的表面声波滤波器，其特征在于，在上述基板的上述凹部的内底面设置由导电性粘接剂形成的粘接层，通过该粘接层将上述表面声波芯片固定在上述基板上，并使上述通孔的上述另外一端与该粘接层连接。
CNB03101075XA 2002-01-09 2003-01-09 表面声波滤波器 Expired - Fee Related CN1242552C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002002500A JP4173308B2 (ja) 2002-01-09 2002-01-09 Ｓａｗフィルタ
JP2002002500 2002-01-09

Publications (2)

Publication Number Publication Date
CN1431775A true CN1431775A (zh) 2003-07-23
CN1242552C CN1242552C (zh) 2006-02-15

Family

ID=19190753

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB03101075XA Expired - Fee Related CN1242552C (zh) 2002-01-09 2003-01-09 表面声波滤波器

Country Status (5)

Country Link
US (1) US6922119B2 (zh)
EP (1) EP1328063A3 (zh)
JP (1) JP4173308B2 (zh)
KR (1) KR100482888B1 (zh)
CN (1) CN1242552C (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101087127B (zh) * 2006-06-06 2010-06-23 富士通媒体部品株式会社 声界面波器件、谐振器和滤波器
CN101421920B (zh) * 2004-01-30 2011-08-10 诺基亚公司 用于改进密封电子器件中的散热的方法以及密封电子器件
CN109088615A (zh) * 2017-06-13 2018-12-25 太阳诱电株式会社 声波装置
CN109939875A (zh) * 2019-03-11 2019-06-28 哈尔滨工业大学（深圳） 一种声表面波雾化芯片、制作方法及装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7298231B2 (en) * 2004-05-27 2007-11-20 Kyocera Corporation Surface acoustic wave device and communication apparatus
US7332986B2 (en) * 2004-06-28 2008-02-19 Kyocera Corporation Surface acoustic wave apparatus and communications equipment
JP2006245990A (ja) * 2005-03-03 2006-09-14 Matsushita Electric Ind Co Ltd 弾性表面波素子及びその製造方法
JP4992908B2 (ja) * 2006-11-13 2012-08-08 株式会社村田製作所 弾性境界波素子、弾性境界波装置及び弾性境界波装置の製造方法
US8338936B2 (en) * 2008-07-24 2012-12-25 Infineon Technologies Ag Semiconductor device and manufacturing method
US8593016B2 (en) * 2010-12-03 2013-11-26 Sri International Levitated micro-manipulator system
US10224260B2 (en) * 2013-11-26 2019-03-05 Infineon Technologies Ag Semiconductor package with air gap
WO2016172217A1 (en) 2015-04-20 2016-10-27 Sri International Microrobot and microrobotic train self-assembly with end-effectors
KR102550176B1 (ko) 2017-11-09 2023-07-03 삼성전기주식회사 음향파 디바이스 및 그 제조방법
KR20200046535A (ko) 2018-10-25 2020-05-07 삼성전기주식회사 탄성파 필터 장치
CN109379056A (zh) * 2018-12-03 2019-02-22 全讯射频科技(无锡)有限公司 一种声表面波滤波器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194540B2 (ja) 1992-07-13 2001-07-30 富士通株式会社 弾性表面波フィルタ
JPH08307196A (ja) * 1995-05-08 1996-11-22 Murata Mfg Co Ltd 圧電素子の実装構造
US5786738A (en) * 1995-05-31 1998-07-28 Fujitsu Limited Surface acoustic wave filter duplexer comprising a multi-layer package and phase matching patterns
JP3982876B2 (ja) * 1997-06-30 2007-09-26 沖電気工業株式会社 弾性表面波装置
US6310422B1 (en) * 1998-03-12 2001-10-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave filter
SE519240C2 (sv) 1998-11-20 2003-02-04 Volvo Personvagnar Ab Arrangemang vid förbränningsmotor innefattandes en värmeväxlare för anpassning av temperaturen hos avgaser vilka ska passera en NOx-adsorberande katalysator
JP2000196407A (ja) * 1998-12-28 2000-07-14 Tdk Corp 弾性表面波装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101421920B (zh) * 2004-01-30 2011-08-10 诺基亚公司 用于改进密封电子器件中的散热的方法以及密封电子器件
CN101087127B (zh) * 2006-06-06 2010-06-23 富士通媒体部品株式会社 声界面波器件、谐振器和滤波器
CN109088615A (zh) * 2017-06-13 2018-12-25 太阳诱电株式会社 声波装置
CN109939875A (zh) * 2019-03-11 2019-06-28 哈尔滨工业大学（深圳） 一种声表面波雾化芯片、制作方法及装置

Also Published As

Publication number Publication date
US6922119B2 (en) 2005-07-26
KR100482888B1 (ko) 2005-04-14
KR20030060807A (ko) 2003-07-16
EP1328063A2 (en) 2003-07-16
CN1242552C (zh) 2006-02-15
JP4173308B2 (ja) 2008-10-29
JP2003204244A (ja) 2003-07-18
US20030132517A1 (en) 2003-07-17
EP1328063A3 (en) 2004-09-29

Similar Documents

Publication Publication Date Title
CN1242552C (zh) 表面声波滤波器
CN1319422C (zh) 混合模块及其制造方法与其安装方法
US6335669B1 (en) RF circuit module
EP2503214B1 (en) Mounting structure for solid-state light sources
JP6470428B2 (ja) 電子部品搭載用パッケージおよび電子装置
US7476965B2 (en) Electronic device with integrated heat distributor
US6108205A (en) Means and method for mounting electronics
US11340412B2 (en) Optical module
US7808786B2 (en) Circuit board with cooling function
EP1671524B1 (en) Electrical circuit apparatus and method for assembling same
US7961470B2 (en) Power amplifier
US7254032B1 (en) Techniques for providing EMI shielding within a circuit board component
KR20060012011A (ko) 납땜 벤트 홀을 사용한 회로 기판 조립체
US5406120A (en) Hermetically sealed semiconductor ceramic package
KR20040073543A (ko) 외부회로에 사용하기 위한 와이어 본드레스 전자소자 및이의 제조방법
US7816690B2 (en) Light-emitting device
KR100733684B1 (ko) 소자의 전기 접촉을 위한 방법 및 장치
KR101115403B1 (ko) 발광 장치
JP2009283898A (ja) 電子部品容器体およびそれを用いた電子部品収納用パッケージならびに電子装置
US9431317B2 (en) Power doubler amplifier module with improved solder coverage between a heat sink and a thermal pad of a circuit package
CN113067127B (zh) 一种星载螺旋天线馈电结构及螺旋天线
US20020063318A1 (en) Ball grid array (BGA) mounting device
JP6825756B1 (ja) Ｃａｎパッケージ型光モジュール
CN114902401B (zh) 热管理封装件和方法
AU2007223005B2 (en) Method and apparatus for dissipating heat from an integrated circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060215

Termination date: 20100209