CN1431700A - Method for mfg. separator with shallow grooves - Google Patents
Method for mfg. separator with shallow grooves Download PDFInfo
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- CN1431700A CN1431700A CN 02101704 CN02101704A CN1431700A CN 1431700 A CN1431700 A CN 1431700A CN 02101704 CN02101704 CN 02101704 CN 02101704 A CN02101704 A CN 02101704A CN 1431700 A CN1431700 A CN 1431700A
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- separator
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- shallow grooves
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Abstract
The mask layer is formed on the surface of the semiconductor substrate. The heat treatment is carried out for the mask layer. The mask pattern is formed by using the microimage etch procedure. Etching the substrate forms multiple shallow trough areas by using the mask pattern as the shade. The insulation layer is formed on the substrate allsidely in order to fill in multiple shallow trough areas. The flatness treatment is carried out until the mask pattern is exposed. The mask pattern is removed. The invention is suitable for raising the efficiency of the selection ratio of the chemical mechanical grinding.
Description
Technical field
The invention relates to a kind of method of manufacture of semiconductor, particularly relevant for a kind of separator with shallow grooves shallow trench isolation; STI) manufacture method can promote cmp (chemical mechanical polishing; CMP) selection of planarization ratio.
Background technology
In recent years, development along with semiconductor integrated circuit manufacturing technology, the quantity of contained assembly constantly increases in the chip, the size of assembly is also constantly dwindled because of the lifting of integration, the line width that uses on the production line enters 1/4th microns (quarter-micron) by inferior micron (sub-micron), even the scope of fine dimension more.And no matter how downsizing of size of components still must be done suitably insulation or isolates between each assembly in wafer, can obtain good assembly character.The technology of this respect is commonly referred to as the assembly isolation technology, and its main purpose is to form spacer between each assembly, and is guaranteeing to dwindle the zone of spacer under the situation of good isolation effect as far as possible, holds more assembly to vacate more chip area.
In various assembly isolation technologies, localized oxidation of silicon method (LOCOS) and shallow channel isolation area (STI) processing procedure are the most normal adopted two kinds of technology, especially the latter because of have area of isolation little and finish after still keep advantage such as substrate flatness, quite valued recently especially semiconductor fabrication.
The manufacture method of traditional shallow channel isolation area, as Fig. 1 to manufacturing process generalized section shown in Figure 8.
At first, consult shown in Figure 1ly, on a silicon base 2 surfaces, form a pad oxide 4 with thermal oxidation method, and with chemical vapour deposition technique deposited silicon nitride layer 6 on pad oxide 4.
Then, consult shown in Figure 2ly, be coated with a photoresist layer 8 on silicon nitride layer 6, and define its pattern, expose the part that desire forms the assembly isolated area with little shadow program.
Consult shown in Figure 3ly, utilize photoresist layer 8 to be used as cover curtain, described silicon nitride layer 6 of etching in regular turn and pad oxide 4.
Then, consult shown in Figure 4, utilize suitable solution removal photoresist layer 8 after, be used as cover curtain with silicon nitride layer 14 and pad oxide 12, etching silicon substrate 2 is with in wherein forming most shallow trenchs 10, in order to the active region of definitions component.
Consult shown in Figure 5ly, thermal oxidation methods are implemented in substrate 2, be used as lining oxide layer with the thin silicon oxide of on the bottom of most shallow trenchs 10 and sidewall, growing up.
Then, consult shown in Figure 6ly, implement chemical vapour deposition procedure, for example use O3 and TEOS to be used as reactant and form oxide layer 14, make it fill up most shallow trenchs 10, and cover on silicon nitride layer 6 surfaces.
Next, consult shown in Figure 7ly, implement a chemical mechanical lapping program (CMP), remove the part that oxide layer 14 exceeds silicon nitride layer 6 surfaces, the assembly isolated area 14a that has an even surface with formation.
Afterwards, consult shown in Figure 7ly, remove silicon nitride layer 6 and pad oxide 4 in regular turn, just finish separator with shallow grooves 14a processing procedure, obtain structure as shown in Figure 7 with suitable engraving method.
Yet, in described traditional separator with shallow grooves manufacture method, be with silicon nitride as etch mask, therefore in etching process, cause stress easily, cause in the semiconductor-based bottom structure and produce defective.
Therefore, be suggested, so can avoid generation of defects at the semiconductor-based end with the manufacture method of oxide replacement silicon nitride as etch mask.Yet, the manufacture method of admiring as the etching cover with oxide but has another problem on the processing procedure: another role that the etch mask layer is played the part of is the stop layer of cmp, thus, then the material with separator with shallow grooves is oxide, causes the selection of cmp better than not.
Summary of the invention
Main purpose of the present invention is to provide a kind of manufacture method of separator with shallow grooves, mainly is to comprise forming cover curtain layer in semiconductor-based basal surface; Cover curtain layer is implemented heat treatment; Utilize micro image etching procedure that cover curtain layer is formed cover curtain pattern; Utilize cover curtain pattern to be veil, the etching substrate forms most shallow trench region; Comprehensive formation insulating barrier is in substrate, to fill up most shallow trench region; Planarization is up to exposing cover curtain pattern; Remove cover curtain pattern.Overcome the drawback of prior art, reach purpose applicable to the selection ratio that improves cmp.
The object of the present invention is achieved like this: a kind of manufacture method of separator with shallow grooves is characterized in that: it comprises the following steps:
(1) provides the semiconductor substrate;
(2) form first cover curtain layer in described substrate surface;
(3) described cover curtain layer is implemented heat treatment, to convert second cover curtain layer to;
(4) utilize micro image etching procedure that described cover curtain layer is formed cover curtain pattern;
(5) utilize described cover curtain pattern to be veil, the described substrate of etching is to form most shallow trench region;
(6) comprehensive formation insulating barrier is in described substrate, to fill up described most shallow trench region;
(7) planarization is up to exposing described cover curtain pattern;
(8) remove described cover curtain pattern.
Described first cover curtain layer is an oxide layer.Described oxide layer is to utilize chemical vapour deposition (CVD) to form.Described heat treatment temperature is 300-500 ℃.The ambiance of described heat treatment temperature process is a nitrogenous gas.Described nitrogenous gas is the mixed gas for nitrogen, ammonia or nitrous oxide.Described second cover curtain layer is the silicon oxynitrides.Described insulating barrier is to be oxide layer.Described oxide layer is to utilize the high density plasma enhanced chemical vapor deposition method to form.Before described oxide layer forms, more comprise forming a cushion oxide layer in described most shallow trench sidewalls and bottom.Described cushion oxide layer is to utilize thermal oxidation method to form.Described planarization is a chemical mechanical milling method.The slurries of described cmp are the mixing materials for tripoli and alkaline ammoniacal liquor.
The manufacture method of another kind of separator with shallow grooves, it is characterized in that: it comprises the following steps:
(1) provides the semiconductor substrate;
(2) form pad oxide, oxide layer in regular turn in described substrate surface;
(3) described oxide layer is implemented nitrogen containing atmosphere and handle, form nitrogenous cover curtain layer;
(4) utilize micro image etching procedure that described nitrogenous cover curtain layer is formed cover curtain pattern;
(5) utilize described cover curtain pattern to be veil, the described substrate of etching is to form most shallow trench region;
(6) comprehensive formation one insulating barrier is in described substrate, to fill up described most shallow trench region;
(7) carry out cmp, up to exposing described cover curtain pattern;
(8) remove described cover curtain pattern.
Described oxide layer is to utilize chemical vapour deposition technique to form.Described pad oxide is to utilize thermal oxidation method to form.The ambient temperature that described nitrogenous gas is handled is 300-500 ℃.Described nitrogenous gas is nitrogen, ammonia or nitrous oxide.It is per minute 300-500cc that described nitrogen feeds flow.It is to be per minute 200-400cc that described ammonia feeds flow.The described nitrogenous gas processing execution time is 5-200 second.Described insulating barrier is an oxide layer.Described oxide layer is to utilize high density plasma enhanced chemical vapor deposition to form.Before described oxide layer forms, more comprise forming cushion oxide layer in described most shallow trench sidewalls and bottom.Described cushion oxide layer is to utilize thermal oxidation method to form.The slurries of described cmp are the mixing material of tripoli and alkaline ammoniacal liquor.
Describe in detail below in conjunction with the preferred embodiment conjunction with figs..
Description of drawings
Fig. 1-Fig. 8 is the generalized section of the manufacturing process of traditional separator with shallow grooves.
Fig. 9-Figure 18 is the generalized section of the manufacturing process of separator with shallow grooves of the present invention.
Embodiment
Consulting Fig. 9-shown in Figure 180, is the generalized section of shallow trench processing procedure of the present invention.
At first, consult shown in Figure 9ly, semiconductor substrate 22 is provided, and forms a pad oxide 24, an oxide layer 26 in regular turn in described substrate 22 surfaces.Wherein said pad oxide 24 for example forms with thermal oxidation method, and the material of described oxide layer 26 for example is a silicon dioxide, and the formation method for example is aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (PCVD) or high density plasma enhanced chemical vapor deposition (HDPCVD) etc.
Then, consult shown in Figure 10, described cover curtain layer 26 is implemented heat treatment process or electricity slurry handling procedure, its ambient temperature is 300-500 ℃, and its ambiance is to be nitrogen containing component gas, for example be the mixed gas of nitrogen, ammonia or nitrous oxide, the flow that the flow that wherein feeds nitrogen is about per minute 300-500cc, ammonia is about per minute 200-400cc, reaction time is 5-200 second, make described silicon dioxide layer form a silica nitrogen compound (SiOxNy) layer as a cover curtain layer 26a, as shown in figure 11.
Consult shown in Figure 12ly, utilize micro image etching procedure to form a patterning photoresistance 28 on described cover curtain layer 26a.Then, described cover curtain layer 26a and described pad oxide 24 are carried out etching, form a cover curtain pattern 26b and a pad oxide pattern 24a, remove described patterning photoresistance 28 with suitable engraving method again, as shown in figure 13
Consulting shown in Figure 14ly, is veil with a described cover curtain pattern 20b again, and the described substrate 22 of etching is to form most shallow trench region 30.
Then, consult shown in Figure 15ly, implement the thermal oxidation method program, under 1000 ℃ temperature, carry out oxidation reaction greatly,, repair the surface damage that is caused because of the ditch trench etch to form a cushion oxide layer 322 in described most shallow trench 30 sidewalls and bottom.
Then, consult shown in Figure 16, implement chemical vapour deposition procedure, for example: aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (PCVD) or high density plasma enhanced chemical vapor deposition (HDPCVD) etc., comprehensive formation one insulating oxide 34 is in described substrate 22, filling up described most shallow trench region 30, and be pre-formed described cushion oxide layer 32, can guarantee the interface quality of described substrate 22 and described insulating oxide 34
Then, consult shown in Figure 17ly, utilize the described insulating oxide 34 of chemical mechanical milling method (CMP) planarization of high selectivity, up to exposing described cover curtain pattern 26b, to form most separator with shallow grooves 34a, the grinding milk that is adopted (slurry) for example is tripoli and alkaline ammoniacal liquor (NH
4OH) mixing material.
At last, consult shown in Figure 180ly, for example utilize wet etch method to remove described cover curtain pattern 26b and described pad oxide pattern 24a in regular turn.
Comprehensively described, the present invention provides following advantage at least:
1, is the oxide layer of handling through nitrogenous gas according to etch mask layer of the present invention, so can avoids in the conventional art with silicon nitride that institute causes the problem of substrate generation defective as cover curtain layer.
2, be with the oxide layer handled through nitrogenous gas stop layer according to the present invention as cmp, thus, can with insulating oxide difference to some extent on material of separator with shallow grooves, can promote the selection ratio of cmp.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limiting scope of the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, a little change and the retouching done all belongs within protection scope of the present invention.
Claims (26)
1, a kind of manufacture method of separator with shallow grooves, it is characterized in that: it comprises the following steps:
(1) provides the semiconductor substrate;
(2) form first cover curtain layer in described substrate surface;
(3) described cover curtain layer is implemented heat treatment, to convert second cover curtain layer to;
(4) utilize micro image etching procedure that described cover curtain layer is formed cover curtain pattern;
(5) utilize described cover curtain pattern to be veil, the described substrate of etching is to form most shallow trench region;
(6) comprehensive formation insulating barrier is in described substrate, to fill up described most shallow trench region;
(7) planarization is up to exposing described cover curtain pattern;
(8) remove described cover curtain pattern.
2, the manufacture method of separator with shallow grooves according to claim 2 is characterized in that: described first cover curtain layer is an oxide layer.
3, the manufacture method of separator with shallow grooves according to claim 1 is characterized in that: described oxide layer is to utilize chemical vapour deposition (CVD) to form.
4, the manufacture method of separator with shallow grooves according to claim 1 is characterized in that: described heat treatment temperature is 300-500 ℃.
5, the manufacture method of separator with shallow grooves according to claim 1 is characterized in that: the ambiance of described heat treatment temperature process is a nitrogenous gas.
6, the manufacture method of separator with shallow grooves according to claim 5 is characterized in that: described nitrogenous gas is the mixed gas for nitrogen, ammonia or nitrous oxide.
7, the manufacture method of separator with shallow grooves according to claim 5 is characterized in that: described second cover curtain layer is the silicon oxynitrides.
8, the manufacture method of separator with shallow grooves according to claim 1 is characterized in that: described insulating barrier is to be oxide layer.
9, the manufacture method of separator with shallow grooves according to claim 8 is characterized in that: described oxide layer is to utilize the high density plasma enhanced chemical vapor deposition method to form.
10, the manufacture method of separator with shallow grooves according to claim 9 is characterized in that: before described oxide layer forms, more comprise forming a cushion oxide layer in described most shallow trench sidewalls and bottom.
11, the manufacture method of separator with shallow grooves according to claim 10 is characterized in that: described cushion oxide layer is to utilize thermal oxidation method to form.
12, the manufacture method of separator with shallow grooves according to claim 1 is characterized in that: described planarization is a chemical mechanical milling method.
13, the manufacture method of separator with shallow grooves according to claim 11 is characterized in that: the slurries of described cmp are the mixing materials for tripoli and alkaline ammoniacal liquor.
14, a kind of manufacture method of separator with shallow grooves, it is characterized in that: it comprises the following steps:
(1) provides the semiconductor substrate;
(2) form pad oxide, oxide layer in regular turn in described substrate surface;
(3) described oxide layer is implemented nitrogen containing atmosphere and handle, form nitrogenous cover curtain layer;
(4) utilize micro image etching procedure that described nitrogenous cover curtain layer is formed cover curtain pattern;
(5) utilize described cover curtain pattern to be veil, the described substrate of etching is to form most shallow trench region;
(6) comprehensive formation one insulating barrier is in described substrate, to fill up described most shallow trench region;
(7) carry out cmp, up to exposing described cover curtain pattern;
(8) remove described cover curtain pattern.
15, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: described oxide layer is to utilize chemical vapour deposition technique to form.
16, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: described pad oxide is to utilize thermal oxidation method to form.
17, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: the ambient temperature that described nitrogenous gas is handled is 300-500 ℃.
18, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: described nitrogenous gas is nitrogen, ammonia or nitrous oxide.
19, the manufacture method of separator with shallow grooves according to claim 18 is characterized in that: it is per minute 300-500cc that described nitrogen feeds flow.
20, the manufacture method of separator with shallow grooves according to claim 18 is characterized in that: it is to be per minute 200-400cc that described ammonia feeds flow.
21, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: the described nitrogenous gas processing execution time is 5-200 second.
22, the manufacture method of separator with shallow grooves according to claim 14 is characterized in that: described insulating barrier is an oxide layer.
23, the manufacture method of separator with shallow grooves according to claim 22 is characterized in that: described oxide layer is to utilize high density plasma enhanced chemical vapor deposition to form.
24, the manufacture method of separator with shallow grooves according to claim 23 is characterized in that: before described oxide layer forms, more comprise forming cushion oxide layer in described most shallow trench sidewalls and bottom.
25, the manufacture method of separator with shallow grooves according to claim 24 is characterized in that: described cushion oxide layer is to utilize thermal oxidation method to form.
26, the manufacture method of separator with shallow grooves according to claim 25 is characterized in that: the slurries of described cmp are the mixing material of tripoli and alkaline ammoniacal liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02101704 CN1431700A (en) | 2002-01-11 | 2002-01-11 | Method for mfg. separator with shallow grooves |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02101704 CN1431700A (en) | 2002-01-11 | 2002-01-11 | Method for mfg. separator with shallow grooves |
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| CN1431700A true CN1431700A (en) | 2003-07-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350586C (en) * | 2003-11-05 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Test region layout for shallow trench isolation |
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2002
- 2002-01-11 CN CN 02101704 patent/CN1431700A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350586C (en) * | 2003-11-05 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Test region layout for shallow trench isolation |
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