CN1426107A - Inner connection line structure for mounting cover layer on inner metal dielectric layer and its producing method - Google Patents
Inner connection line structure for mounting cover layer on inner metal dielectric layer and its producing method Download PDFInfo
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- CN1426107A CN1426107A CN 01140360 CN01140360A CN1426107A CN 1426107 A CN1426107 A CN 1426107A CN 01140360 CN01140360 CN 01140360 CN 01140360 A CN01140360 A CN 01140360A CN 1426107 A CN1426107 A CN 1426107A
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Abstract
The interconnection structure includes at least the first metal wire layer formed on the semiconductor substrate; inner dielectric layer formed on the first metal wire layer; contact plug penetrating the inner dielectric layer top to form electric connection with the first metal wire layer; the second metal wire layer formed on the surface of inner dielectric layer and forming electric connection to the top of the contact plug; and covering layer set between the top of the inner dielectric layer and the bottom of the second metal wire layer. It has the functions of reducing air exhaust effect, raising the reliability of the interconnection structure and raising produce quality.
Description
Technical field
The invention relates to a kind of internal connection-wire structure of semiconductor subassembly, particularly relevant for a kind of internal connection-wire structure on the inner metal dielectric layer and preparation method thereof that cap rock is arranged at.
Background technology
In traditional integrated circuit is made, produce isolated effect between the various assemblies in order to make, can between adjacent component, make an insulation system; And in order to make some part in the assembly produce the signal connection, then can make an internal connection-wire structure, its method is that many plain conductors are made in the different layers, and with inner metal dielectric layer with low-k (inter-metal dielectric IMD) fills up gap between the adjacent metal lead.In addition, comprehensive flatness requirement for follow-up plain conductor processing procedure, (chemical mechanical polishing, CMP) method removes the top area (or being called a sacrifice layer) of IMD layer, so that the IMD layer obtains smooth surface with cmp again in meeting.
Consult Fig. 1-shown in Figure 4, it shows the generalized section of the method for traditional fabrication internal connection-wire structure.As shown in Figure 1, semiconductor substrate 10 include most first metal carbonyl conducting layers 12, first oxide layers 14 be covered on first metal carbonyl conducting layer 12, second oxide layer 16 is to be formed on first oxide layer, 14 surfaces.
The production method of first oxide layer 14 can adopt high density plasma enhanced chemical vapor deposition (high densityplasma chemical vapor deposition, HDPCVD) processing procedure or electricity slurry reinforcement formula chemical vapour deposition (CVD) (plasma enhanced chemical vapor dcposition, PECVD) processing procedure is so that first oxide layer 14 is filled up the space between first metal carbonyl conducting layer 12.
The production method of second oxide layer 16 can adopt the PECVD processing procedure, so that second oxide layer, 16 depositions arrive a predetermined thickness, is used as the sacrifice layer of subsequent CMP processing procedure.
As shown in Figure 2, utilize the top flattening of CMP method, and second oxide layer 16 that retains and first oxide layer 14 are as an IMD layer 18, can be used to the internal connection-wire structure of isolated follow-up making second oxide layer 16.
As shown in Figure 3, go up the photoresist layer 19 that definition formation one has pattern prior to second oxide layer, 16 surfaces, carry out the anisotropic etching processing procedure again, the IMD layer 18 that is not covered by photoresist layer 19 is removed, until the top that exposes first metal carbonyl conducting layer 12, just form most interlayer holes (via hole) 20.
As shown in Figure 4, after photoresist layer 19 removals, go up deposition one conductive layers in whole substrate 10 surfaces, and make conductive layer fill up each interlayer hole 20.
Then, utilize little shadow and etch process, the conductive layer definition is formed most second metal carbonyl conducting layers 24, the conductive layer that remains in the interlayer hole 20 then becomes a contact plunger 22, can be used to be electrically connected first metal conducting layer 12 and second metal conducting layer 24.Thus, first metal conducting layer 12, contact plunger 22 and second metal conducting layer 24 constitute an internal connection-wire structure that uprightly stacks.Above-mentioned internal connection-wire structure has the shortcoming that following urgent need overcomes:
1, at first, the adherence between second metal carbonyl conducting layer 24 and the MD layer 18 is not good;
2, secondly, (out gassing) effect of giving vent to anger of IMD layer 18 causes the phenomenon of peeling off of second metal carbonyl conducting layer 24 easily, and especially when the material of IMD layer 18 was the organic material of low-k, the effect of giving vent to anger can be obvious increasingly.These shortcomings can reduce the reliability and the acceptance rate thereof of internal connection-wire structure.
Summary of the invention
The purpose of this invention is to provide a kind of internal connection-wire structure on the inner metal dielectric layer and preparation method thereof that cap rock is arranged at, by between IMD layer top and second metal carbonyl conducting layer bottom, making a cap rock, overcome the drawback of prior art, reach and reduce the effect of giving vent to anger, the reliability that improves internal connection-wire structure and the purpose of acceptance rate.
The object of the present invention is achieved like this: a kind of cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: which comprises at least first metal carbonyl conducting layer is that definition is formed at at semiconductor-based the end; Inner metal dielectric layer is to be formed on this first metal carbonyl conducting layer; Contact plunger is to run through this inner metal dielectric layer to be electrically connected with the top formation of this first metal carbonyl conducting layer; Second metal carbonyl conducting layer is that definition is formed on the surface of this inner metal dielectric layer, and is electrically connected with the top formation of this contact plunger; Cap rock is to be arranged between this inner metal dielectric layer top and this second metal carbonyl conducting layer bottom.
This cap rock is to be selected from following arbitrary inorganic: SiON, SiO
2, SiC, SiN or the inorganic of other low-k.This cap rock is made of organic material.The material of this inner metal dielectric layer is the silica for the chemical vapor deposition process made.This inner metal dielectric layer includes: first oxide layer is to be formed on this first metal carbonyl conducting layer with density electricity pulp vapor deposition process; And second oxide layer be to be formed on this first oxide layer with electricity slurry reinforcement formula chemical vapor deposition process.The material of this inner metal dielectric layer is the organic material of the formed low-k of spin coating processing procedure.This inner metal dielectric layer has smooth surface.
The present invention also provides a kind of cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: which comprises at least the following step:
(1) provide the semiconductor substrate, it includes first metal carbonyl conducting layer and inner metal dielectric layer is to be covered on this first metal carbonyl conducting layer;
(2) with the flattening surface of this inner metal dielectric layer;
(3) on the flat surfaces of this inner metal dielectric layer, form a cap rock;
(4) form an interlayer hole, this interlayer hole runs through this inner metal dielectric layer and exposes the top of talking first metal carbonyl conducting layer to the open air;
(5) in this interlayer hole, fill up a contact plunger;
(6) form second metal carbonyl conducting layer in this contact plunger top;
(7) cap rock is to be formed between this inner metal dielectric layer top and this second metal carbonyl conducting layer bottom.
This cap rock is to be selected from following arbitrary inorganic institute: SiON, SiO
2, SiC, SiN or other inorganic by the low-k of chemical vapor deposition process made.This cap rock is that the organic material by spin coating processing procedure made is constituted.The material of this inner metal dielectric layer is the silica of chemical vapor deposition process made.
The manufacture method of this inner metal dielectric layer includes the following step:
Carry out density electricity pulp vapor deposition process, on this first metal carbonyl conducting layer, form first oxide layer, and carry out electricity slurry reinforcement formula chemical vapor deposition process, on this first oxide layer, form second oxide layer.The material of this inner metal dielectric layer is the organic material of the formed low-k of spin coating processing procedure.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Description of drawings
Fig. 1-Fig. 4 is the generalized section of the method for traditional fabrication internal connection-wire structure.
Fig. 5-Figure 10 is the generalized section that the present invention makes the method for internal connection-wire structure.
Figure 11 is the generalized section of another kind of internal connection-wire structure of the present invention.
Embodiment
Consult Fig. 5-shown in Figure 10, it is the generalized section that the present invention makes the method for internal connection-wire structure.
As shown in Figure 5, provide semiconductor substrate 30, its internal production has electric crystal, diode, other semiconductor subassembly or other metal interconnecting layer.At first, deposit, little shadow and etch process, go up definition in substrate 30 surfaces and form most first metal conducting layers 32, be used as the ground floor lead of internal connection-wire structure.But aluminium alloy, copper alloy or the multi-layer metal structure of the material aluminium of first metal conducting layer 32, siliceous or copper.In preferred embodiment, first metal conducting layer 32 is to be made into multi-layer metal structure, and it includes a Ti layer, a TiN layer, AlCu layer, a Ti layer and the 2nd TiN layer.
Then, carry out the HDPCVD processing procedure, one have first oxide layer 34 of low-k, and make first oxide layer 34 fill up space between the metal conducting layer 32 with deposition on the whole surface of substrate 30.Because the HDPCVD processing procedure is to carry out deposition manufacture process and etch process simultaneously, first oxide layer 34 that therefore is formed at metal conducting layer 32 tops is tapered profiles.In addition, also can adopt the PECVD processing procedure to deposit first oxide layer 34.Subsequently, carry out the PECvD processing procedure, go up deposition one in first oxide layer, 34 surfaces and have second oxide layer 36 of low-k, and the apparent height of second oxide layer 36 is to present similar profile along with the surface undulation of first oxide layer 34.In addition, second oxide layer 36 needs to arrive a predetermined thickness, so that the grinding sacrifice layer as follow-up MP processing procedure to be provided.
As shown in Figure 6, carry out the CMP processing procedure, with second flattening surface with change layer 36, first oxide layer 34 that then retains and second oxide layer 36 are to be used as an IMD layer 38.
And then, as shown in Figure 7, on the flat surfaces of IMD layer 38, form a cap rock 40, can be used to prevent the phenomenon of giving vent to anger of IMD layer 38, and can increase adherence between the metal carbonyl conducting layer of IMD layer 38 and follow-up making, the inorganic that the material of cap rock 40 can select for use CVD to make, as: SiON, SiO
2, SiC, SiN or other dielectric constant be less than 4 dielectric material, the also optional organic material of making in order to spin coating (spin-on coating) mode is as chromophone.
Shown in Fig. 8,9, go up the photoresist layer 42 that definition formation one has pattern prior to cap rock 40 surfaces, carry out the anisotropic etching processing procedure again, as: reactive ion etching (reactive ion etching, RIE) processing procedure, the cap rock 40, second oxide layer 36 and first oxide layer 34 that are not covered by photoresist layer 42 are removed in regular turn, until the top that exposes plain conductor 32, to form most interlayer holes 44.Subsequently photoresist layer 42 is divested.It should be noted that the material when cap rock 40 is SiON, SiO
2, when SiC or SiN, in the exposure manufacture process of definition photoresist layer 42 patterns, that cap rock 40 can be used as is a kind of four/ a wave plate (quarter-waveplate), can prevent the heavy basic unit of light penetration cap rock 40 belows, also can prevent in the light reflected light resistance layer 42.Therefore, the critical dimension of interlayer hole 44 can be dwindled as far as possible, and then reaches next manufacture of semiconductor requirement from generation to generation.
As shown in figure 10, on the whole surface of substrate 30, deposit a conductive layer so that it fills up interlayer hole 44.In preferred embodiment, but aluminium alloy, the copper alloy of the material aluminium of conductive layer, siliceous or copper.Then, carry out little shadow, etch process and with cap rock 44 as an etching stopping layer, the conductive layer definition is formed most second metal carbonyl conducting layers 48, be used as the second layer lead of internal connection-wire structure.Then become a contact plunger 46 as for the conductive layer that remains in the interlayer hole 44, can be used to be electrically connected first metal carbonyl conducting layer 32 and second metal carbonyl conducting layer 48.Thus, first metal carbonyl conducting layer 32, contact plunger 46 and second metal carbonyl conducting layer 48 constitute an internal connection-wire structure that uprightly stacks.
In internal connection-wire structure of the present invention, cap rock 40 is to be arranged between IMD layer 38 top and second metal carbonyl conducting layer, 48 bottoms, can be used to increase the tack between the IMD layer 38 and second metal carbonyl conducting layer 48, and can prevent the phenomenon that second metal carbonyl conducting layer 48 is peeled off, also can avoid the problem that phenomenon caused of giving vent to anger of IMD layer 38.Therefore internal connection-wire structure of the present invention has better reliability degree.In addition, when photoresist layer 42 was carried out exposure manufacture process, cap rock 40 had the function of antireflecting coating; When definition second metal carbonyl conducting layer 48,40 functions of cap rock with etching stopping layer.Therefore, the method for making internal connection-wire structure of the present invention is comparatively simple and can promote acceptance rate.
In addition, as shown in figure 11, the organic material that the first above-mentioned oxide layer 34 and second oxide layer 36 all can have low-k replaces, and become an IMD layer 38 ', its material can be spin-on glasses (spin-onglass, SOG), spin-coating macromolecule (spin-on polymer, SOP), as the organic material of the low-k that FLARE, SILK, Paryene, PAE-11 or other can be made by spin coating method.Use the spin coating mode instead and make IMD layer 38 ', can further simplify processing procedure, the reduction cost of manufacture of internal connection-wire structure.
Though the present invention discloses as above with a preferred embodiment, so it is not in order to limiting the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, a little change and the retouching done all belongs within protection scope of the present invention.
Claims (13)
1, a kind of cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: which comprises at least first metal carbonyl conducting layer is that definition is formed at at semiconductor-based the end; Inner metal dielectric layer is to be formed on this first metal carbonyl conducting layer; Contact plunger is to run through this inner metal dielectric layer to be electrically connected with the top formation of this first metal carbonyl conducting layer; Second metal carbonyl conducting layer is that definition is formed on the surface of this inner metal dielectric layer, and is electrically connected with the top formation of this contact plunger; Cap rock is to be arranged between this inner metal dielectric layer top and this second metal carbonyl conducting layer bottom.
2, according to claim 1 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this cap rock is to be selected from following arbitrary inorganic institute: SiON, SiO
2, SiC, SiN or the inorganic of other low-k.
3, according to claim 1 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this cap rock is made of organic material.
4, according to claim 1 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: the material of this inner metal dielectric layer is the silica for the chemical vapor deposition process made.
5, according to claim 4 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this inner metal dielectric layer includes: first oxide layer is to be formed on this first metal carbonyl conducting layer with density electricity pulp vapor deposition process; And second oxide layer be to be formed on this first oxide layer with electricity slurry reinforcement formula chemical vapor deposition process.
6, according to claim 1 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: the material of this inner metal dielectric layer is the organic material of the formed low-k of spin coating processing procedure.
7, according to claim 1 cap rock is arranged at internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this inner metal dielectric layer has smooth surface.
8, a kind of claim 1 is described is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer with cap rock, it is characterized in that: which comprises at least the following step:
(1) provide the semiconductor substrate, it includes first metal carbonyl conducting layer and inner metal dielectric layer is to be covered on this first metal carbonyl conducting layer;
(2) with the flattening surface of this inner metal dielectric layer;
(3) on the flat surfaces of this inner metal dielectric layer, form a cap rock;
(4) form an interlayer hole, this interlayer hole runs through this inner metal dielectric layer and exposes the top of talking first metal carbonyl conducting layer to the open air;
(5) in this interlayer hole, fill up a contact plunger;
(6) form second metal carbonyl conducting layer in this contact plunger top;
(7) cap rock is to be formed between this inner metal dielectric layer top and this second metal carbonyl conducting layer bottom.
9, according to claim 8 cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this cap rock is to be selected from following arbitrary inorganic institute: SiON, SiO
2, SiC, SiN or other inorganic by the low-k of chemical vapor deposition process made.
10, according to claim 8 cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: this cap rock is that the organic material by spin coating processing procedure made is constituted.
11, according to claim 8 cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: the material of this inner metal dielectric layer is the silica of chemical vapor deposition process made.
12, according to claim 11 cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: the manufacture method of this inner metal dielectric layer includes the following step:
Carry out density electricity pulp vapor deposition process, on this first metal carbonyl conducting layer, form first oxide layer, and carry out electricity slurry reinforcement formula chemical vapor deposition process, on this first oxide layer, form second oxide layer.
13, according to claim 8 cap rock is arranged at the manufacture method of the internal connection-wire structure on the inner metal dielectric layer, it is characterized in that: the material of this inner metal dielectric layer is the organic material of the formed low-k of spin coating processing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01140360 CN1426107A (en) | 2001-12-11 | 2001-12-11 | Inner connection line structure for mounting cover layer on inner metal dielectric layer and its producing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01140360 CN1426107A (en) | 2001-12-11 | 2001-12-11 | Inner connection line structure for mounting cover layer on inner metal dielectric layer and its producing method |
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| CN1426107A true CN1426107A (en) | 2003-06-25 |
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| CN 01140360 Pending CN1426107A (en) | 2001-12-11 | 2001-12-11 | Inner connection line structure for mounting cover layer on inner metal dielectric layer and its producing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112435983A (en) * | 2018-08-16 | 2021-03-02 | 联华电子股份有限公司 | Metal internal connection structure and its making method |
| CN113223998A (en) * | 2020-02-04 | 2021-08-06 | 联芯集成电路制造(厦门)有限公司 | Semiconductor element with intermetallic dielectric pattern and manufacturing method thereof |
-
2001
- 2001-12-11 CN CN 01140360 patent/CN1426107A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112435983A (en) * | 2018-08-16 | 2021-03-02 | 联华电子股份有限公司 | Metal internal connection structure and its making method |
| CN112435983B (en) * | 2018-08-16 | 2023-12-19 | 联华电子股份有限公司 | Metal interconnect structure and method for fabricating the same |
| CN113223998A (en) * | 2020-02-04 | 2021-08-06 | 联芯集成电路制造(厦门)有限公司 | Semiconductor element with intermetallic dielectric pattern and manufacturing method thereof |
| US11749601B2 (en) | 2020-02-04 | 2023-09-05 | United Semiconductor (Xiamen) Co., Ltd. | Semiconductor device having inter-metal dielectric patterns and method for fabricating the same |
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