CN1417388A - 一种拉制单晶时加快多晶原料熔化法及底部发热体装置 - Google Patents
一种拉制单晶时加快多晶原料熔化法及底部发热体装置 Download PDFInfo
- Publication number
- CN1417388A CN1417388A CN02117603A CN02117603A CN1417388A CN 1417388 A CN1417388 A CN 1417388A CN 02117603 A CN02117603 A CN 02117603A CN 02117603 A CN02117603 A CN 02117603A CN 1417388 A CN1417388 A CN 1417388A
- Authority
- CN
- China
- Prior art keywords
- raw material
- heating element
- accelerate
- bottom heater
- polycrystal raw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 title abstract description 3
- 238000003723 Smelting Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 64
- 239000002994 raw material Substances 0.000 claims abstract description 29
- 239000010453 quartz Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims description 49
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 230000004927 fusion Effects 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 5
- 241000033695 Sige Species 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- 239000010703 silicon Substances 0.000 abstract description 29
- 229910052732 germanium Inorganic materials 0.000 abstract description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 6
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 239000000155 melt Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021176035A CN1200147C (zh) | 2001-10-30 | 2002-05-08 | 一种用于拉制单晶时加快多晶原料熔化的底部发热体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN01134282.X | 2001-10-30 | ||
CN01134282 | 2001-10-30 | ||
CNB021176035A CN1200147C (zh) | 2001-10-30 | 2002-05-08 | 一种用于拉制单晶时加快多晶原料熔化的底部发热体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1417388A true CN1417388A (zh) | 2003-05-14 |
CN1200147C CN1200147C (zh) | 2005-05-04 |
Family
ID=25740567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021176035A Expired - Lifetime CN1200147C (zh) | 2001-10-30 | 2002-05-08 | 一种用于拉制单晶时加快多晶原料熔化的底部发热体装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1200147C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102505145A (zh) * | 2011-10-28 | 2012-06-20 | 江西赛维Ldk太阳能高科技有限公司 | 石墨预热片、半导体预热装置、硅芯炉及磷检炉 |
CN103545162A (zh) * | 2012-07-09 | 2014-01-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置和石英窗加热方法 |
CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
CN109554755A (zh) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | 一种加热设备及多晶硅生产设备 |
CN114293256A (zh) * | 2021-12-30 | 2022-04-08 | 有研科技集团有限公司 | 一种直拉法生长无位错锗单晶热场和生长工艺 |
-
2002
- 2002-05-08 CN CNB021176035A patent/CN1200147C/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102505145A (zh) * | 2011-10-28 | 2012-06-20 | 江西赛维Ldk太阳能高科技有限公司 | 石墨预热片、半导体预热装置、硅芯炉及磷检炉 |
CN102505145B (zh) * | 2011-10-28 | 2014-12-10 | 江西赛维Ldk太阳能多晶硅有限公司 | 石墨预热片、半导体预热装置、硅芯炉及磷检炉 |
CN103545162A (zh) * | 2012-07-09 | 2014-01-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置和石英窗加热方法 |
CN103545162B (zh) * | 2012-07-09 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置和石英窗加热方法 |
CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
CN109554755A (zh) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | 一种加热设备及多晶硅生产设备 |
CN114293256A (zh) * | 2021-12-30 | 2022-04-08 | 有研科技集团有限公司 | 一种直拉法生长无位错锗单晶热场和生长工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN1200147C (zh) | 2005-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102220633B (zh) | 一种半导体级单晶硅生产工艺 | |
CN102936747B (zh) | 一种采用大尺寸坩埚铸锭类单晶的方法 | |
CN102220634B (zh) | 一种提高直拉硅单晶生产效率的方法 | |
WO2016082525A1 (zh) | 一种多晶硅铸锭炉底部小保温板活动装置及多晶硅铸锭炉 | |
US8524000B2 (en) | Pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt | |
KR101574749B1 (ko) | 단결정 제조용 상부히터, 단결정 제조장치 및 단결정 제조방법 | |
CN102433587A (zh) | 多元大尺寸稀土硼化物LaxCe1-xB6单晶块体阴极材料的制备方法 | |
CN101787559B (zh) | 一种真空气氛下制备高阻区熔硅单晶的加热线圈装置 | |
CN1205362C (zh) | 直拉硅单晶炉热场的气流控制方法及装置 | |
CN1200147C (zh) | 一种用于拉制单晶时加快多晶原料熔化的底部发热体装置 | |
CN1195106C (zh) | 一种用于直拉硅单晶制备中的掺杂方法及其装置 | |
JPH06345584A (ja) | 単結晶引上げ方法およびその装置 | |
CN102206855A (zh) | 直拉单晶炉石墨坩埚 | |
CN101812727B (zh) | 一种直流电场下定向凝固提纯多晶硅的方法 | |
CN106498494A (zh) | 一种mems器件制作用硅单晶材料的热场和制备方法 | |
JP2008266090A (ja) | シリコン結晶素材及びこれを用いたfzシリコン単結晶の製造方法 | |
CN102719883B (zh) | 一种半导体级单晶硅生产工艺 | |
CN113355737B (zh) | 一种方形硅芯的制备方法 | |
KR101703691B1 (ko) | 석영 유리 도가니 및 그 제조 방법, 및 실리콘 단결정의 제조 방법 | |
KR100428699B1 (ko) | 수직-수평 온도구배를 갖는 대형 결정 육성장치 및 그육성방법 | |
CN112941615B (zh) | 一种区熔硅单晶的收尾方法 | |
JP3719452B2 (ja) | 単結晶銅の製造方法 | |
CN201063884Y (zh) | 一种用于直拉硅单晶炉热场的主发热体 | |
CN114457412A (zh) | 废弃硅料再利用方法 | |
JPH11274537A (ja) | 大粒径多結晶シリコンの製造法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120112 Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: BEIJING GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120112 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100088 HAIDIAN, BEIJING TO: 100088 XICHENG, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120112 Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
|
C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM Semiconductor Materials Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150601 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100088 XICHENG, BEIJING TO: 101300 SHUNYI, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150601 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050504 |