CN1415781A - Method for producing material of base plate for encapsulating integrated circuit - Google Patents
Method for producing material of base plate for encapsulating integrated circuit Download PDFInfo
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- CN1415781A CN1415781A CN 02137372 CN02137372A CN1415781A CN 1415781 A CN1415781 A CN 1415781A CN 02137372 CN02137372 CN 02137372 CN 02137372 A CN02137372 A CN 02137372A CN 1415781 A CN1415781 A CN 1415781A
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- Prior art keywords
- alumina
- ceramic
- base material
- diamond
- manufacture method
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Abstract
A substrate material for IC package features that the diamond film is deposited on the alumina ceramics by hot-wire chemical gas-phase deposition method, that is, the diamond film is deposited on the alumina ceramics in the reaction chamber under vacuum condition. In this process, W wire is used as heat source and ethyl alcohol and hydrogen gas are used as reactants.
Description
Technical field
The present invention relates to a kind of new type of substrate material that is applicable to the unicircuit encapsulation, belong to electronic material and components and parts field.
Background technology
As everyone knows, alumina-ceramic is a kind of base plate for packaging material that tradition adopts in the unicircuit, but since the alumina-ceramic thermal conductivity less (～0.2W/cmK), can not in time chip heat be distributed, be unfavorable for the development of unicircuit to the high power density direction; The dielectric coefficient of alumina-ceramic also big (～10) can cause the long signal delay time at stop, thereby limit the development of unicircuit to higher frequency in addition.Based on above reason, people wish to find a kind of new base plate for packaging material always, and it had both had high thermal conductivity, had low specific inductivity again, and can be complementary with existing packaging process, to reduce production costs.In the Al2O3 material, mix glassy phase can improve relatively substrate thermal conductivity (～1.5W/cmK), but specific inductivity still higher (～20) (referring to J.Am.Ceram.Soc.72 (1989) P1861).The AlN substrate that Japan Tokuyama company produces has the big advantage of thermal conductivity (thermal conductivity as the SH-15 type can reach 1.69W/cmK), but it is higher that its dielectric coefficient still is some, (specific inductivity as SH-15 type AlN pottery is 8.71) (referring to 33 pages of the 2nd phases of " electronic component " nineteen ninety-five).The thermal conductance of BeO and dielectric properties are all more superior, and thermal conductivity is 2.7～3.0W/cmK, and dielectric coefficient is 6.5, but it has severe toxicity (referring to 38 pages of the 5th phases of " Shanghai space flight " nineteen ninety-five).Though glass-ceramic can reduce the dielectric coefficient (4.2～8.2) of substrate, its thermal conductivity still very low (0.014W/cmK) (referring to 27 pages of " Shanghai space flight " 1991 the 3rd phases).1992, M.Y.Chu etc. have reported artificial diamond's stone flour and ultra-fine alumina powder body and function high temperature sintering method have been prepared diamond/alumina composite material, and the research that is used to improve computer W head wearing quality, but sintering temperature still very high (＞1350 ℃), so diamond will be to graphite inversion of phases (referring to J.Mater.Res.7 (1992) p3010).1993, W.B.Johnson etc. have reported the method manufacturing diamond/aluminum matrix composite that soaks into synthetic diamond micropowder with fusion Al solution chemistry, and be used for the research of integrated circuit substrate, but impregnation process temperature too high (800 ℃), owing to the aluminium activity is strong, therefore easy and diamond reacts and formation Al
3C
4Compound (referring to J.Mater.Res.8 (1993) p1169).Through literature search repeatedly, also find to have simultaneously high heat conductance, low-k so far, and to the base plate for packaging material of person toxicological harmless.
Summary of the invention
The objective of the invention is at the problems referred to above, a kind of have good heat conduction and dielectric over-all properties are provided, and be complementary, have the base plate for packaging material of market application foreground widely with present packaging process.
Another object of the present invention provides a kind of depositing diamond film on the alumina-ceramic base material and makes double-deck material.
The thermal conductivity of diamond thin very high (20W/cmK) is nearly 10 times of AlN, Al
2O
3Nearly 100 times, its dielectric coefficient only derives from the electronic polarization of atom in the crystal, has all the high heat conduction substrates than present exploitation, as BeO, Al
2O
3, AlN and the much lower dielectric coefficient of SiC.In addition, purified diamond thin dielectric loss is very little, and thermal expansivity also mates with silicon single crystal very much, and relevant packaging procesies such as the ohmic contact of diamond thin, metallization and soldering have also obtained good solution.In addition, the chemical stability that diamond thin is good, frequency stability and temperature stability make it become present optimal base plate for packaging material.But the fragility of diamond thin own is big, physical strength is not high, adopts the diamond chip cost of suitable thickness too high again.Therefore, use diamond film at present also unrealistic separately as IC substrate package.Have the shortcoming that thermal conductivity is low, specific inductivity is big though consider alumina-ceramic, not inferior in the performance of aspects such as physical strength, wear resistance, oxidation-resistance.And it is to use maximum base plate for packaging materials in the present unicircuit, and relevant packaging process is also very ripe, helps the duration of packaging process and the reduction of scrap build cost.In conjunction with the characteristics of above two kinds of materials, technical scheme of the present invention has adopted on alumina-ceramic depositing diamond film to make to have double-deck material.
Characteristics of the present invention are to adopt hot-wire chemical gas-phase deposition (Hot Filament Chemical Vapor Deposition:HFCVD) method growing diamond membrane on the alumina-ceramic base material, have the double-deck baseplate material of diamond film/alumina-ceramic thereby prepare.Adopt tungsten filament as heating source in the inventive method, as reactant feed, under the vacuum decompression condition, make depositing diamond film on the alumina-ceramic base material of the indoor placement of deposition reaction with analytically pure hydrogen and analytically pure liquid ethanol.
Should be pointed out that especially that because adamantine crystalline structure and alumina-ceramic differ greatly, so the nucleation of diamond thin on alumina-ceramic is very difficult with growth.In addition, the thermal expansivity of diamond and alumina-ceramic also exists than big-difference, can produce very big thermal stresses at place, temperature-fall period median surface.If without suitable surface treatment, promptly enable growing diamond membrane, also can influence the heat conduction and the dielectric properties of matrix material because the sticking power of film and substrate is too poor, finally still limited applying of this material.In fact as far back as nineteen ninety-five, people such as W.D.Fan are when the diamond wear proof coating of studying alumina pottery, just be concerned about the sticking power problem of diamond and aluminum oxide, he adopts the method increase adhesion of thin film of depositing Ti C, TiN, TiC-TiN multilayer transition layer in advance.But, be used for integrated circuit substrate so can not use for reference because this method having introduced impurity such as TiC and TiN at the interface, can have a negative impact to dielectric and thermal conductivity.In addition, this method needs the transition layer of deposit multilayer different components, and the technology more complicated is unfavorable for the reduction (referring to Surface and Coating Technology 72 (1995) P78) of production cost.Therefore, in order effectively to solve the sticking power problem of diamond thin and alumina-ceramic, the present invention is before growing diamond membrane, earlier alumina-ceramic is carried out carbon ion and inject processing, put it in the inert atmosphere high temperature annealing again 30～60 minutes, annealing temperature is between 600 ℃～1200 ℃.This method can improve the bonding force between diamond film and the aluminum oxide greatly, and does not introduce other impurity, can the dielectric and the thermal conductivity of material not had a negative impact.In addition, its treating processes is close with the semi-conductor implantttion technique, helps the integrated of production technique and integrates.
The diamond film that the inventive method makes/alumina-ceramic bilayer structure baseplate material has comparatively ideal performance and effect.This material has lower dielectric coefficient, and for the aluminum oxide single-layer ceramic, the dielectric coefficient during this material 1MHz drops to 7.2 from 10.7, and other dielectric properties are: dielectric loss is 1.2 * 10 under the 1MHz
-4Resistivity is 1.89 * 10
14Ω cm; Dielectric strength is 2.14 * 10
7Volts/meter.This material also has high thermal, can improve the heat radiation situation of encapsulating structure; For the aluminum oxide single-layer ceramic, the transverse thermal conductivity under its room temperature also rises to 4.897W/cmK from 0.217W/cmK.Employing was once adopted the bonding force of scraping between strip test diamond and alumina-ceramic after in advance alumina-ceramic being carried out carbon ion injection treatment process.Record that bonding strength is 73.4 * 10 under its room temperature
-3J/mm
2Learn that through other test the ultimate compression strength of this material is 2790 ± 92 MPas; Folding strength is 485 ± 18 MPas.In addition, the inventive method manufacturing process is simple, and the packaging process of material and existing technology are complementary, and can reduce production costs.This processing method is nontoxic in addition, wide application, practical.
Description of drawings
Now that the description of drawings of the inventive method is as follows:
Fig. 1 makes the diamond/device of aluminum oxide bilayer structure baseplate material and the synoptic diagram of flow process for the present invention.
Specific implementation method
Now in conjunction with the accompanying drawings and embodiments technical scheme of the present invention is further described.
Referring to Fig. 1, place an alumina-ceramic plate substrate 6 on the sample bench 7 in cvd reactive chamber 1, the tungsten filament 5 that it is 0.4mm that its top the is provided with 16 diameters heating source of doing, its output rating is adjustable continuously, peak power is 1000W, and adopting ethanol and hydrogen is reactant.Analytical pure hydrogen in the hydrogen cylinder 2 have two output branch roads, and gas transmission branch road is that hydrogen passes through mass flowmeter 11 and directly feeds cvd reactive chambers 1, and to control its flow be 100ml/ minute; Another gas transmission branch road is that hydrogen is by bubbling bottle 3 and take out with the analytical pure ethanol in this bottle and enter cvd reactive chamber 1 through mass flowmeter.Analytical pure alcoholic acid bubbling bottle 3 is housed places thermostatic bath 4 to keep homo(io)thermism.It is 2ml/ minute that this branch road is controlled its flow.Be connected with a true air pump 9 and a reducing valve 10 in the bottom of cvd reactive chamber 1, can vacuumize decompression, and it is stable to keep reaction chamber 1 internal gas pressure, it is 4.0 kPas that weather gauge 14 records its reaction pressure.Deposition power is stabilized in 450W.In order to predict the temperature of alumina-ceramic plate substrate 6 in the reaction chamber 1, thermopair 8 can be embedded in the below of base material 6, recording its temperature is 800 ℃.In addition, by temperature controller 13 with the temperature-stable of alumina-ceramic plate substrate 6 between ± 10 ℃, the standoff distance of tungsten filament Yu base material 6 remains on about 8mm.
The present invention is a reactant gases with hydrogen and ethanol, reacting activation by 16 high temperature tungsten filaments decomposes ethanol, and be co-deposited on the alumina substrate with the form of diamond and graphite, but because the speed of atom hydrogen-type corrosion graphite is higher than far away adamantine erosion rate in the reaction atmosphere, therefore the graphite that deposits is met and is preferentially eroded by the atomic hydrogen in the gas phase, and diamond is remained mutually, thereby has realized the diamond film growth on the alumina-ceramic.
Alumina ceramic plate should be clean with the alumina ceramic plate surface cleaning earlier before depositing diamond film, puts into ion implanter then, injects processing with the carbon ion of 70KeV, and implantation dosage is 4 * 10
17/ cm
2Then the alumina ceramic plate behind the injection carbon ion is put into the nitrogen atmosphere stove, through 1050 ℃ of annealing, the time is 30 minutes, can be standby.
Claims (5)
1. manufacture method as the IC substrate package material, it is to be base material with the alumina-ceramic, it is characterized in that on this base material, depositing diamond thin, and make diamond/aluminum oxide bilayer structure baseplate material, its processing method is to adopt hot filament CVD growing diamond membrane on alumina-ceramic, promptly with tungsten filament as heating source, adopting ethanol and hydrogen is reactant, under the vacuum decompression condition, make depositing diamond film on the alumina-ceramic base material of the indoor placement of deposition reaction.
2. a kind of manufacture method as claimed in claim 1 as the IC substrate package material, it is characterized in that the indoor alumina-ceramic base material of deposition reaction is before carrying out depositing diamond film, need in advance this alumina-ceramic to be carried out carbon ion and inject processing, put it into high temperature annealing in the inert atmosphere again.
3. a kind of manufacture method as claimed in claim 1 as the IC substrate package material, it is characterized in that the described deposition reaction that is placed with the alumina-ceramic base material is indoor, after vacuumizing decompression, send into reactant gases hydrogen and ethanol, this moment, its air pressure was 3-6 kPa; The percent by volume of ethanol in mixed gas is 0.5-5%; The temperature of aluminum oxide base material is 500-900 ℃.
4. a kind of manufacture method as claimed in claim 2 as the IC substrate package material, it is characterized in that the carbon ion that described alumina-ceramic carries out in advance injects processing, its method is that the alumina-ceramic that cleans up is put into ion implanter, carbon ion with 70keV injects processing, and implantation dosage is 4 * 10
17/ cm
2, then the injection sample is put into the nitrogen atmosphere stove and annealed 30-60 minute down at high temperature 600-1200 ℃; Its optimum annealing temperature is 1050 ℃, and the time is 30 minutes.
5. a kind of manufacture method as the IC substrate package material as claimed in claim 3 is characterized in that the described deposition reaction that is placed with the alumina-ceramic base material is indoor, and through vacuumizing decompression, its optimum air pressure is 4.0 kPas; The optimal temperature of aluminum oxide base material substrate is 800 ℃ in the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02137372 CN1415781A (en) | 2002-10-10 | 2002-10-10 | Method for producing material of base plate for encapsulating integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02137372 CN1415781A (en) | 2002-10-10 | 2002-10-10 | Method for producing material of base plate for encapsulating integrated circuit |
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| CN1415781A true CN1415781A (en) | 2003-05-07 |
Family
ID=4748972
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| CN 02137372 Pending CN1415781A (en) | 2002-10-10 | 2002-10-10 | Method for producing material of base plate for encapsulating integrated circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300046C (en) * | 2004-11-03 | 2007-02-14 | 上海大学 | Method for preparing composite material of aluminium oxide-diamond |
| CN102011101B (en) * | 2009-09-04 | 2013-06-05 | 清华大学 | Growing device for diamond film |
| CN115141037A (en) * | 2022-07-08 | 2022-10-04 | 杭州大和江东新材料科技有限公司 | Preparation method for solving problem of falling of particles of aluminum oxide component for semiconductor equipment |
-
2002
- 2002-10-10 CN CN 02137372 patent/CN1415781A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300046C (en) * | 2004-11-03 | 2007-02-14 | 上海大学 | Method for preparing composite material of aluminium oxide-diamond |
| CN102011101B (en) * | 2009-09-04 | 2013-06-05 | 清华大学 | Growing device for diamond film |
| CN115141037A (en) * | 2022-07-08 | 2022-10-04 | 杭州大和江东新材料科技有限公司 | Preparation method for solving problem of falling of particles of aluminum oxide component for semiconductor equipment |
| CN115141037B (en) * | 2022-07-08 | 2023-09-26 | 杭州大和江东新材料科技有限公司 | Preparation method for solving problem of falling of alumina component particles for semiconductor equipment |
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