CN117728147A - Surface metallization method for microwave dielectric ceramic resonator - Google Patents
Surface metallization method for microwave dielectric ceramic resonator Download PDFInfo
- Publication number
- CN117728147A CN117728147A CN202311702837.6A CN202311702837A CN117728147A CN 117728147 A CN117728147 A CN 117728147A CN 202311702837 A CN202311702837 A CN 202311702837A CN 117728147 A CN117728147 A CN 117728147A
- Authority
- CN
- China
- Prior art keywords
- microwave dielectric
- dielectric ceramic
- coating
- layer
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000001465 metallisation Methods 0.000 title claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 41
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 23
- 239000007787 solid Substances 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 20
- 239000004332 silver Substances 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000007704 transition Effects 0.000 claims abstract description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 6
- 238000005476 soldering Methods 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 239000011630 iodine Substances 0.000 claims description 5
- 229910052573 porcelain Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000007781 pre-processing Methods 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a surface metallization method of a microwave dielectric ceramic resonator, and relates to the technical field of ceramic surface treatment. Comprises two steps of coating deposition, wherein the inner layer is a titanium transition layer, and the outer layer is a silver soldering conductive layer. Firstly, preparing a titanium metallized coating on the surface of microwave dielectric ceramic by adopting non-contact solid powder vapor deposition, and effectively inhibiting coarse grains caused by overhigh concentration of titanium atoms on the surface to be deposited; and secondly, sputtering a silver coating on the surface of the titanium metallized ceramic prepared in the first step through a magnetron sputtering technology to realize high wettability of the surface of the metallized ceramic. Through a two-step preparation method, the inner titanium coating is used as a transition layer to realize transition of thermal expansion coefficient, and the outer silver coating is used as a welding conducting layer to realize encapsulation of the microwave dielectric ceramic resonator. The preparation method is simple and convenient to operate, saves energy, and the obtained double-layer coating is compact, uniform in tissue composition, good in film base combination, high in matching degree of thermal expansion coefficients between the substrate and the double-layer coating and small in residual stress.
Description
Technical Field
The invention relates to the technical field of ceramic surface treatment, in particular to a surface metallization method of a microwave dielectric ceramic resonator, which is metallized into a double-layer metallized coating.
Background
The microwave dielectric ceramic has the characteristics of high dielectric constant, low frequency temperature coefficient, high quality factor and the like, and is widely applied to the field of mobile communication. At present, the surface metallization of the microwave dielectric ceramic mainly adopts the traditional screen printing silver paste and high-temperature sintering process, but the problems of high cost, serious pollution and the like are faced by the technology. In addition, the popularization and application of the technology are limited by low matching degree of the thermal expansion coefficient of the film base system, poor bonding strength of the film base interface and the like.
The solid powder vapor phase method belongs to a chemical vapor deposition method, and is a coating preparation technology for realizing release and growth of metal elements to be deposited on the surface of a matrix by taking a gaseous compound as a carrier, has high deposition rate, is suitable for the matrix with a complex shape, is applied to the field of ceramic metallization, deposits a layer of metallized coating on the surface of the ceramic, can obviously improve the wettability of the surface of the ceramic, and reduces the residual stress of an interface. The magnetron sputtering technology belongs to a typical physical vapor deposition technology, and is a film preparation technology for realizing the deposition of atoms on a matrix by sputtering a target material through argon ion bombardment, wherein the film has controllable thickness and higher purity, and is suitable for the deposition of various metal films.
Therefore, the method can be applied to the surface of the microwave dielectric ceramic to solve the problems of poor matching degree of the thermal expansion coefficients of the ceramic and the metal and more interface holes and cracks in the prior art.
Disclosure of Invention
The invention provides an improved method for metallizing the surface of microwave dielectric ceramic, which aims to solve the problems of poor matching degree of ceramic/metal thermal expansion coefficients and more interface holes and cracks in the surface metallizing of the microwave dielectric ceramic.
The invention is realized by the following technical scheme: the surface metallization method of the microwave dielectric ceramic resonator comprises the steps of twice coating deposition to form a double-layer metallized coating; the method comprises the following specific steps:
the first step: preprocessing a microwave dielectric ceramic resonator;
and a second step of: placing the pretreated microwave dielectric ceramic resonator in a mold and placing the microwave dielectric ceramic resonator in a ceramic crucible together by adopting a non-contact solid powder vapor deposition method, ensuring that the mold does not touch the inner wall of the ceramic crucible, filling the embedded solid powder between the ceramic crucible and the mold, ensuring that the mold is completely wrapped by the embedded solid powder, and adding a crucible cover to the ceramic crucible; then placing the ceramic crucible in a quartz tube furnace, carrying out coating deposition at high temperature in vacuum atmosphere, preserving heat for a period of time, cooling the furnace temperature to room temperature, cleaning and drying to obtain surface titanium metallized microwave dielectric ceramic; the quartz tube furnace is vacuumized and then cleaned by rare gas for use.
And a third step of: the method comprises the steps of (1) obliquely placing microwave dielectric ceramic with a titanium surface in a magnetron sputtering instrument with a rotary substrate table at a certain angle by adopting a magnetron sputtering technology, and setting a metal silver target in the magnetron sputtering instrument by taking a feed hole as a support; and (3) adopting a direct current constant current sputtering power supply, firstly achieving a background vacuum atmosphere, then introducing argon, maintaining certain sputtering air pressure, maintaining sputtering current, and sputtering a layer of silver coating to obtain the double-layer metallized coating on the surface of the microwave dielectric ceramic resonator, namely the titanium/silver double-layer metallized coating on the surface of the microwave dielectric ceramic resonator.
The metallization method adopted by the invention comprises the following specific steps: placing a microwave dielectric ceramic matrix sample in a mold, then placing the mold in a porcelain crucible, filling solid embedding powder, ensuring that the periphery of the mold is completely wrapped by the powder, and capping the porcelain crucible; then placing the ceramic crucible in a quartz tube furnace, heating and preserving heat for vapor deposition, and finally obtaining the titanium metallized coating on the surface of the microwave dielectric ceramic; and then placing the prepared titanium metallized microwave dielectric ceramic on a rotary substrate table in a magnetron sputtering instrument to carry out sputtering silver plating.
Further, the double-layer metallized coating of the microwave dielectric ceramic resonator is as follows: the inner layer is a titanium transition layer, and the outer layer is a silver soldering conductive layer.
Further, in the first step, the specific pretreatment process of the microwave dielectric ceramic resonator is as follows: respectively adopt 100 # ，400 # ，800 # ，1000 # ，1500 # ，2000 # ，3000 # The silicon carbide powder polishes the surface of the microwave dielectric ceramic resonator, and then sequentially adopts acetone and deionized water to carry out ultrasonic cleaning and drying for standby.
Preferably, in the second step, the mold used in the non-contact solid powder vapor deposition method is a hollow cylindrical mold with a hole on the periphery, a crucible cover is added on the mold, and the mold isolates the microwave dielectric ceramic resonator from the embedded solid powder. Furthermore, the materials of the mold, the porcelain crucible and the crucible cover are all alumina ceramics.
Preferably, the embedded solid powder is a mixture of titanium sponge and iodine simple substance, and the mixture is fully ground and mixed by adopting a planetary ball mill.
Preferably, in the second step, the coating deposition temperature is 1000-1100 ℃; the heat preservation time is 20-30 minutes.
Preferably, the sputtering gas pressure in the third step is maintained at about 0.5. 0.5 Pa; the magnetron sputtering power is 10-30W/cm 2 。
Compared with the prior art, the invention has the following beneficial effects: according to the surface metallization method of the microwave dielectric ceramic resonator, provided by the invention, the titanium/silver double-layer coating is prepared on the surface of the microwave dielectric ceramic resonator by a solid powder gas phase method and a magnetron sputtering technology, so that the surface metallization of the resonator is realized. The separation of the surface to be deposited and the embedded solid powder is realized through a special die, so that coarse grains caused by overhigh concentration of titanium atoms on the surface of the matrix are avoided; the invention has the advantages that the balance between the nucleation rate and the growth rate of titanium grains on the surface of the alumina ceramic matrix is maintained, the refinement of the coating grains is realized, and the generation of holes and cracks at the interface of the film base is inhibited; compared with the existing screen printing silver firing metallization method, the method realizes high wettability and conductivity of the surface of the microwave dielectric ceramic resonator by magnetron sputtering of the silver coating. The invention can realize the rapid preparation of the metallized coating on the surface of the microwave dielectric ceramic resonator, and has the advantages of simple operation, energy conservation, compact double-layer coating, uniform tissue composition, good combination of film base, high matching degree of thermal expansion coefficients between the substrate and the double-layer coating and small residual stress.
Drawings
FIG. 1 is a schematic illustration of a non-contact solid powder vapor deposition process.
Fig. 2 is a schematic cross-sectional view of a titanium/silver double-layer metallized coating on the surface of a microwave dielectric ceramic resonator treated in this example.
The figures are labeled as follows: 1-mould, 2-crucible cover, 3-embedded solid powder, 4-porcelain crucible, 5-quartz tube furnace, 6-silver coating, 7-titanium coating and 8-microwave dielectric ceramic resonator.
Description of the embodiments
The invention is further illustrated below with reference to specific examples.
The microwave dielectric ceramic resonator, the titanium sponge and the iodine simple substance used in the embodiment are all obtained from commercial approaches.
The surface metallization method of the microwave dielectric ceramic resonator comprises the steps of twice coating deposition to form a double-layer metallized coating; the double-layer metallized coating is as follows: the inner layer is a titanium transition layer, and the outer layer is a silver soldering conductive layer. The method comprises the following specific steps:
(1): the microwave dielectric ceramic resonator is preprocessed, and the specific process is as follows: respectively adopt 100 # ，400 # ，800 # ，1000 # ，1500 # ，2000 # ，3000 # The silicon carbide powder polishes the surface of the microwave dielectric ceramic resonator, and then sequentially adopts acetone and deionized water to carry out ultrasonic cleaning and drying for standby.
(2) Mixing the titanium sponge and the iodine simple substance according to the mass ratio of 4:1, and fully grinding and mixing by adopting a planetary ball mill to obtain solid powder for standby.
(3) Placing the pretreated microwave dielectric ceramic resonator in a mould, then placing the mould and a sample in a ceramic crucible to ensure that the alumina mould does not touch the inner wall of the ceramic crucible, filling the embedded solid powder prepared in the step (1) between the mould and the inner wall of the ceramic crucible to ensure that the mould is completely wrapped by the embedded solid powder, and capping the ceramic crucible.
(4) Placing the ceramic crucible into a vacuum quartz tube furnace, and vacuum atmosphere with initial pressure less than 3×10 -3 Pa, setting the deposition temperature to 1050 ℃, heating up to 10 ℃ per minute, cooling down to 10 ℃ per minute, maintaining for 20 minutes, cooling the furnace to room temperature, taking out the sample, and sequentially carrying out ultrasonic cleaning by adopting acetone and deionized water and drying to obtain the titanium metallized coating on the surface of the microwave dielectric ceramic.
(5) Placing a titanium metallized microwave dielectric ceramic resonator in a magnetron sputtering instrument, taking a feed hole as a support, placing the titanium metallized microwave dielectric ceramic on a rotatable substrate table at a certain angle, and setting a metal silver target in the magnetron sputtering instrument; the DC constant current sputtering power supply is adopted, and the background vacuum is 5 multiplied by 10 -3 Pa, sputtering air pressure 0.5. 0.5 Pa, sputtering power 10-30W/cm 2 Sputtering a silver coating to obtain the double-layer metallized coating on the surface of the microwave dielectric ceramic resonator.
The scope of the present invention is not limited to the above embodiments, and various modifications and alterations of the present invention will become apparent to those skilled in the art, and any modifications, improvements and equivalents within the spirit and principle of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. A surface metallization method of a microwave dielectric ceramic resonator is characterized by comprising the following steps of: comprises two times of coating deposition to form a double-layer metallized coating; the method comprises the following specific steps:
the first step: preprocessing a microwave dielectric ceramic resonator;
and a second step of: placing the pretreated microwave dielectric ceramic resonator in a mold and placing the microwave dielectric ceramic resonator in a ceramic crucible together by adopting a non-contact solid powder vapor deposition method, ensuring that the mold does not touch the inner wall of the ceramic crucible, filling the embedded solid powder between the ceramic crucible and the mold, ensuring that the mold is completely wrapped by the embedded solid powder, and adding a crucible cover to the ceramic crucible; then placing the ceramic crucible in a quartz tube furnace, carrying out coating deposition at high temperature in vacuum atmosphere, preserving heat for a period of time, cooling the furnace temperature to room temperature, cleaning and drying to obtain surface titanium metallized microwave dielectric ceramic;
and a third step of: the method comprises the steps of (1) obliquely placing microwave dielectric ceramic with a titanium surface in a magnetron sputtering instrument with a rotary substrate table at a certain angle by adopting a magnetron sputtering technology, and setting a metal silver target in the magnetron sputtering instrument by taking a feed hole as a support; and (3) adopting a direct current constant current sputtering power supply, firstly achieving a background vacuum atmosphere, then introducing argon, maintaining certain sputtering air pressure, maintaining sputtering current, and sputtering a layer of silver coating to obtain the double-layer metallized coating on the surface of the microwave dielectric ceramic resonator.
2. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: the double-layer metallized coating of the microwave dielectric ceramic resonator is as follows: the inner layer is a titanium transition layer, and the outer layer is a silver soldering conductive layer.
3. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: in the first step, the pretreatment specific process of the microwave dielectric ceramic resonator comprises the following steps: respectively adopt 100 # ，400 # ，800 # ，1000 # ，1500 # ，2000 # ，3000 # The silicon carbide powder polishes the surface of the microwave dielectric ceramic resonator, and then sequentially adopts acetone and deionized water to carry out ultrasonic cleaning and drying for standby.
4. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: in the second step, the mould adopted in the non-contact solid powder vapor deposition method is a hollow cylinder mould with holes on the periphery, a crucible cover is added on the mould, and the mould isolates the microwave dielectric ceramic resonator from the embedded solid powder.
5. A method of metallizing a surface of a microwave dielectric ceramic according to claim 4, wherein: in the second step, the materials of the mould, the porcelain crucible and the crucible cover are all alumina ceramics.
6. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: the embedded solid powder is a mixture of titanium sponge and iodine simple substance, and the mixture is fully ground and mixed by adopting a planetary ball mill; the mass ratio of the titanium sponge to the iodine simple substance is 1:1-4:1.
7. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: in the second step, the deposition temperature of the coating is 1000-1100 ℃ and the temperature rising rate is 10 ℃ per minute.
8. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: in the second step, the heat preservation time is 20-30 minutes, and the cooling rate is 10 ℃ per minute when the cooling is performed.
9. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: the background vacuum in the third step was 5×10 -3 Pa, a sputtering gas pressure was maintained at 0.5. 0.5 Pa.
10. A method of metallizing a surface of a microwave dielectric ceramic according to claim 1, wherein: the magnetron sputtering power in the third step is 10-30W/cm 2 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311702837.6A CN117728147A (en) | 2023-12-12 | 2023-12-12 | Surface metallization method for microwave dielectric ceramic resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311702837.6A CN117728147A (en) | 2023-12-12 | 2023-12-12 | Surface metallization method for microwave dielectric ceramic resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117728147A true CN117728147A (en) | 2024-03-19 |
Family
ID=90199143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311702837.6A Pending CN117728147A (en) | 2023-12-12 | 2023-12-12 | Surface metallization method for microwave dielectric ceramic resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117728147A (en) |
-
2023
- 2023-12-12 CN CN202311702837.6A patent/CN117728147A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112779494B (en) | Surface metallization process of dielectric ceramic filter | |
| CN104789928A (en) | Preparation method for tantalum nitride and tantalum multi-layer film with characteristics of low resistance temperature coefficient and high resistivity | |
| CN1364748A (en) | Combining method for aluminium nitride and copper | |
| CN113122918B (en) | TaC coating crucible for third-generation semiconductor crystal growth and preparation method | |
| CN115572961B (en) | Method for preparing diamond composite material by microwave-assisted air pressure infiltration | |
| CN112456989B (en) | Preparation method of silicon dioxide target blank | |
| CN110371955A (en) | A kind of preparation method of graphene-metallic composite | |
| CN110590404A (en) | HfB on surface of carbon-based material2Preparation method of-SiC oxidation resistant coating | |
| CN113652644B (en) | TiAl coating capable of improving high-temperature oxidation resistance of titanium alloy and preparation method thereof | |
| CN108085651B (en) | Electron beam bombardment resistant secondary electron emission composite film and preparation method thereof | |
| CN117728147A (en) | Surface metallization method for microwave dielectric ceramic resonator | |
| CN117626195A (en) | Preparation method of silicon carbide protective coating based on high-power pulse magnetron sputtering | |
| CN112851334A (en) | Heating body based on silicon nitride and preparation process thereof | |
| CN109763108B (en) | Non-in-situ preparation of HoB2C2Method for coating ceramic | |
| CN114695951B (en) | Preparation method of composite solid electrolyte | |
| CN112142440A (en) | Diamond film radiating fin and preparation method thereof | |
| US20230052246A1 (en) | Composite vc heat sink containing copper/diamond composite wick structure and method for preparing same | |
| CN116288201A (en) | Iron-carbon alloy target and film preparation method thereof | |
| CN113981383B (en) | Method for plating titanium film on AlN ceramic substrate surface by multi-arc ions | |
| US6562418B2 (en) | Microwave processing of pressed boron powders for use as cathodes in vacuum arc sources | |
| CN113403577B (en) | Method for improving binding force of Cu matrix and carbon-based film | |
| CN114015982A (en) | Method for preparing crystalline barium stannate film by magnetic field enhancement technology | |
| CN101117705A (en) | Method for preparing zirconium wolframic acid-copper gradient composite film | |
| CN114685178A (en) | Ceramic plate and metal film connecting method based on PVD (physical vapor deposition) deposition method | |
| JPH0726372A (en) | Rotating cathode target, its production and film formed by using this target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |