JPH0726372A - Rotating cathode target, its production and film formed by using this target - Google Patents

Abstract

PURPOSE:To produce a rotating cathode target with which a film can be formed stably and speadily for a long time by forming an undercoat on a cylindrical target holder and then performing hot isotropic press of ZnO powder containing a specified amt. of Ga2O3 on the holder. CONSTITUTION:A copper cylindrical target holder 2 having an undercoating layer formed by plasma thermal spraying is welded and fixed to the inside of a stainless steel capsule 1. The surface of the target holder is preferably made roughened by sand blasting or the like. The undercoating layer is formed to have a medium coefft. of thermal expansion between that of the target holder 2 and a ceramic layer to be formed, and/or to have a coefft. of thermal expansion near that of the ceramic layer. Moreover, it is preferably to apply an Al2O3 ceramic fiber paper 3 on the inner wall of the capsule 1. Then, a powder or compacted body essentially comprising ZnO and containing 1-10% Ga2O3 is supplied to fill the capsule 1 and subjected to hot isotropic press to form the ceramic layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotating cathode target used for forming a transparent conductive film, a method for producing the same, and a film formed by using the rotating cathode target.

[0002]

2. Description of the Related Art A transparent conductive film has both high transmittance and high conductivity in the visible light region, and is used for a transparent electrode for a display element such as a liquid crystal display element, a plasma light emitting element, an EL (electro luminescence) element or the like. It is used as a transparent electrode for solar cells, TFTs, and various other light receiving elements. Further, it is widely used as a heat-reflecting film for automobiles and buildings, an antistatic film for various applications such as photomasks, and a transparent heating element for various anti-fogging purposes such as a freezing showcase.
Further, it is also used as a substrate for electrochromic devices as light control glass.

Conventionally, as a transparent conductive film, tin oxide (SnO ₂ ) containing antimony or fluorine as a dopant, indium oxide (In ₂ O ₃ ) containing zinc as a dopant, zinc oxide, etc., is deposited on a glass substrate. Known indium tin oxide film (hereinafter referred to as IT
The O film) is widely used mainly as an electrode for a display element such as a liquid crystal because a low resistance film can be easily obtained.

At present, a general method for forming an ITO film on a glass substrate is a vacuum deposition method or a sputtering method. However, in any of the methods, when indium is used as a starting material, indium is a rare metal and thus is expensive, so that there is a limit to cost reduction of the substrate. In addition, the resource reserve of indium is particularly small compared to other elements, and since it is extracted as a by-product during refining of zinc ore, its production amount also depends on the zinc production amount. Have difficulty. If the demand for transparent conductive films expands as the market size of display devices etc. expands in the future, I
In the case of TO, there is a problem in stable supply of indium as a raw material.

On the other hand, a transparent conductive film containing a zinc oxide (ZnO) film as a main component is made of zinc as a main raw material, so that it is extremely low in price and has a large reserve and a large production amount. It has the advantage of not worrying about points. Also, the specific resistance value is 10 ⁻⁴ Ω by adding impurities such as Al.
-It is known that a low resistance film on the order of cm and ITO can be obtained. Therefore, the ZnO film is expected as a low-cost conductive film that replaces the ITO film.

However, when Al is added, the most common Zn
By a sputtering method which is an O film forming method, 10 ^{−4 is formed} on a glass substrate
To obtain a low resistance film on the order of Ω · cm, for example, (Thin S
olidFilms, 124,43,1985), it is necessary to have a special substrate arrangement such as vertically arranging the substrate with respect to the target, or to have a special device such as external magnetic field loading. Met.

Further, heat treatment in a non-oxidizing atmosphere after film formation is also required to reduce the resistance. Further, it is difficult to manufacture the low resistance film with good reproducibility because the influence of the change with time of the target is great. Since the film-forming speed of these low-resistance films is extremely low, about 5 Å / sec or less, there is a fatal problem that the production speed is slow in the actual industrial production, and the effect of cost reduction becomes small as a whole. The cost was low and ZnO was not fully utilized.

When a transparent conductive film is applied to an electrode of a display element or the like, it is 300 ° C. to 500 ° C. in the element manufacturing process.
Heat treatment is performed at a high temperature of the order. In this case, heat treatment in an inert gas is also possible, but equipment for holding the atmosphere is required, which causes an increase in cost. Therefore, industrially, heat treatment in the atmosphere is required. Also,
When the transparent conductive film is used as a heating element, the conductive film is used while being electrically heated in the atmosphere. Therefore, it is required that the change in resistance value due to heat generation is small, that is, heat resistance in an oxidizing atmosphere.

Even when a transparent conductive film is applied as the heat ray reflective glass, the bending and strengthening processes are performed in the atmosphere at 60
Since high temperature heat treatment at 0 ° C or higher is performed, similar heat resistance is required. Thus, when applying the transparent conductive film to the industrial field, it is not simply heat resistance in a non-oxidizing atmosphere,
High heat resistance in the atmosphere is required.

In this respect, the ITO film is not sufficient, but has heat resistance in the atmosphere. For this reason, ITO is mainly used for liquid crystal display devices and the like, because it is required only to have heat resistance at a relatively low temperature around 300 ° C. On the other hand, the heat resistance of the conventional ZnO film (without additives) is significantly inferior to that of ITO in the oxidizing atmosphere, and improvement of the heat resistance in the oxidizing atmosphere has been a problem in practical use.

Therefore, in order to improve the heat resistance of this ZnO film, conventionally, as disclosed in Japanese Patent Publication No. 3-72011, ZnO is doped with an impurity of Group 3 of the periodic table, so that argon is added. It has been shown that the heat resistance is improved in a non-oxidizing atmosphere such as an air stream or a vacuum.
However, when the impurities of Group 3 are added, the heat resistance in an inert gas atmosphere or a reducing gas atmosphere is improved, but the high temperature heat treatment at 400 ° C. in the air atmosphere increases the electrical resistance by four digits or more. Therefore, it is also known that it cannot be used as a conductive film (Technical Report of IEICE, CPM 84-8, 55 (1984)). Due to this lack of heat resistance in the atmosphere, the ZnO film is delayed in practical use as a transparent conductive film.

When the transparent conductive film is applied as the display element substrate, the transparent heating element, and the heat ray reflecting glass in this way, the transparent conductive film undergoes high temperature heating in the atmosphere, and therefore the electrical and optical characteristics of the conductive film are improved. It is extremely important to have properties that are not compromised. However, conventionally, a transparent conductive film containing ZnO as a main component has been expected as a low-cost material to replace ITO, but its heat resistance in an oxidizing atmosphere is insufficient, and thus its widespread practical application and industrialization have been delayed. Zn improves the heat resistance of
It has been regarded as the biggest problem of the O film.

To meet these requirements, the present applicant has proposed a new sputtering target for a transparent conductive film in Japanese Patent Application No. 4-207470. However, recently, the required sputtering target has a complicated shape and a highly efficient planar target in which the target thickness is partially changed is required. Since the method of the invention described above is a method of obtaining a sintered body by general pressureless firing, it is difficult to manufacture targets of various shapes and complicated structures, and raw material mixing, molding, sintering, and processing are performed. ,
Since it is manufactured through bonding and a long process, a large-scale device jig is required. Therefore, there has been a demand for a transparent conductive film target which can be adapted to an arbitrary shape structure and can have heat resistance and low resistance in the air.

Further, in the case of the sputtering of large-area glass for construction, high sputtering power is applied to increase the film forming speed in order to improve the productivity, but in this case, the cooling of the target limits the film forming speed. There are problems such as cracking and peeling.

A new type of magnetron type rotating cathode target which is improved in these points is known (see Japanese Patent Publication No. 58-500174). This is because the magnetic field generation means is installed inside the cylindrical target and the sputtering is performed while rotating the target while cooling it from the inside of the target, so that a larger power can be input per unit area than the planar target. Therefore, high-speed film formation is possible. Most of these targets are cylindrical rotating cathodes made of metal or alloy to be sputtered, the material to be sputtered is soft,
Alternatively, in the case of brittle metal or alloy, it is manufactured on a cylindrical target holder.

However, in the case of a metal target, it is possible to coat a multilayer film of oxides, nitrides, carbides, etc. in various sputtering atmospheres, but the coating film is damaged by a different atmosphere and the desired composition cannot be obtained. Further, a low-melting-point metal target has drawbacks such as melting when power is applied too much, and a ceramic target is desired.

Japanese Patent Laid-Open No. 60-181270 proposes a method of manufacturing a sputter target by thermal spraying. However, the thermal expansion difference between ceramics and metal is so large that the thermal sprayed film cannot be made thicker, and the thermal shock during use causes a close contact. There is a problem that the property is deteriorated and peeling occurs. There is also a method of producing a ceramics sintered body in a cylindrical shape and joining it to the target holder metal with In metal, but it is difficult to make and costly.

[0018]

DISCLOSURE OF THE INVENTION The present invention is intended to solve the above-mentioned various problems of the prior art, and improves the adhesion between the cylindrical target holder and the ceramics layer, and in terms of production and use. Another object of the present invention is to provide a rotating cathode target having a high degree of freedom and capable of high-speed film formation, a manufacturing method thereof, and a film formed by using the rotating cathode target.

[0019]

The present invention involves forming an undercoat on a cylindrical target holder, and then forming a Zn coat.
A rotating cathode characterized in that a powder containing O ₂ as a main component and containing Ga ₂ O ₃ in an amount of 1 to 10% or a molded body of the powder is placed, and hot isostatic pressing is performed to form a ceramics layer to produce the same. It is a method of manufacturing a target.

In the present invention, a powder containing ZnO as a main component and containing Ga ₂ O ₃ in an amount of 1 to 10% or a molded product of the powder is placed on a cylindrical target holder, and hot isostatic pressing is performed. A rotary cathode target having a ceramics layer formed by performing the sputtering, and a film formed by sputtering using the rotary cathode target.

The method of the present invention is basically a method for hot isostatic pressing (hereinafter, referred to as "ceramic powder").
Sintered on the target holder by HIP processing)
They are bonded to each other to directly form a ceramic layer as a target. With this, the process of filling powder into a conventional mold and press-molding, the process of sintering it in an electric furnace, the process of sintering it by hot pressing, the process of modifying it into an appropriate shape, the joining of ceramics and holder It does not require a process to do.

The method according to the present invention comprises a step of obtaining a raw material powder, a surface treatment step for closely bonding the outer surface of a cylindrical target holder to a ceramic layer, and a step of sintering and bonding by HIP processing. ing.

The ceramic powder used in the present invention is prepared by utilizing chemical synthesis or solid-phase reaction, especially in the case of a complex compound which is not easily available. This powder can be used by pulverizing it, granulating it, and flowing it into the HIP-treated capsule to make it into a secondary particle size that facilitates vibration filling.

The ceramic powder of the present invention is substantially an oxide of zinc gallium and has a Ga ₂ O ₃ content of 1-1.
It contains 0 wt%. When Ga ₂ O ₃ is 1% or less as the target ceramic layer to be sputtered, the crystallinity of the thin film is insufficient and high heat resistance cannot be obtained when the film is formed. The phases are separated into two phases, and low resistance and high heat resistance cannot be obtained.

The ceramic powder of the present invention may contain other components within a range that does not impair the objects and effects of the present invention, but it is desirable to keep the amount as small as possible.

The ceramic powder used in the present invention can be manufactured by the following method. That is, a predetermined amount of ZnO powder having an average particle size of 1 μm or less and Ga ₂ O ₃ powder are weighed, a ball mill is used for 3 hours or more to prepare mud by wet mixing with water as a solvent, and the mixture is sprayed with a spray dryer. The powder granulated into the secondary particles is adjusted. The particle size of this granulated powder is 150μ
It is preferably m or less, and particularly, those having an average particle size of about 80 μm are suitable, and a molded product having good fluidity and good packing density can be obtained.

For the cylindrical target holder, various metals such as stainless steel and copper can be used. Prior to plasma spraying of a ceramic powder as a target material, in order to improve adhesion, it is necessary to roughen the surface of the target holder by sandblasting with Al ₂ O ₃ or SiC abrasive grains. Alternatively, after processing the surface of these target holders into a V-groove shape or a screw shape, using Al ₂ O ₃ or SiC abrasive grains,
It is also preferable to improve the adhesion by sandblasting.

After the surface of the target holder is roughened, the difference in thermal expansion between the target material to be sprayed and the target holder is mitigated, and the adhesion is improved to withstand the peeling due to mechanical or thermal shock. It is preferable to form layers.

As such an undercoat, a layer having a coefficient of thermal expansion intermediate between the coefficient of thermal expansion of the cylindrical target holder and the coefficient of thermal expansion of the ceramic layer (hereinafter referred to as layer A), and the ceramic layer is approximated. It is preferably at least one layer selected from the group consisting of the layers having the coefficient of thermal expansion (hereinafter referred to as layer B). In particular, it is optimal to form both layers and to have a structure of target holder / A layer / B layer / target material layer.

Even if the undercoat layer is only the A layer or the B layer, if it is a metal or an alloy, it has high elasticity and small brittleness, so that the adhesion of the ceramic layer as the target to the target holder is high. Can be increased.

The coefficient of thermal expansion of the B layer is optimally within the range of ± 2 × 10 ^-6 / ° C. of the coefficient of thermal expansion of the target ceramic layer.

The material of the undercoat is Mo, T
i, Ni, Nb, Ta, W, Ni-Al, Ni-Cr,
Ni-Cr-Al, Ni-Cr-Al-Y, Ni-Co
A conductive powder such as -Cr-Al-Y can be used. The thickness of the undercoat is 30 to 100 μm, respectively
A degree is preferable.

Specifically, the material of the undercoat is Ga
It is necessary to change it according to the thermal expansion coefficient of the oxide ceramic layer of Zn and Zn (the thermal expansion coefficient of copper or stainless steel that can be used as the target holder is 17 to 18 × 10 ^−6).
/ ° C).

For example, in the case of the ceramic layer (coefficient of thermal expansion 5 to 6 × 10 ^-6 / ° C.), the preferable thermal expansion coefficient of the undercoat A layer is 12 to 15 × 10 ^-6 / ° C. Ni, Ni-Al, Ni-Cr, Ni-C
r-Al, Ni-Cr-Al-Y, Ni-Co-Cr-
Al-Y etc. are mentioned. The preferred thermal expansion coefficient of the undercoat B layer is 5 to 8 × 10 ⁻⁶ / ° C., and its material includes Mo, W, Ta, Nb and the like.

Among such undercoat materials, an undercoat having a thermal expansion coefficient close to that of the target material,
It is preferable to provide an undercoat layer in which the undercoat having a thermal expansion coefficient close to that of the target holder is changed in a gradient composition because the adhesion is further improved.

The undercoat is preferably formed by plasma spraying in a high temperature plasma gas, preferably in a high temperature plasma gas under a non-oxidizing atmosphere.

Next, the above-mentioned undercoat-treated target holder is placed in the HIP-treated capsule shown in FIG. 1, the ceramic granulated powder is filled, and the HIP treatment is performed to sinter and bond.

The HIP processing capsule will be described with reference to FIG. In FIG. 1, 1 is a stainless steel capsule, 2 is a surface-treated copper cylindrical target holder, 3 is Al ₂ O ₃ ceramic fiber paper,
Reference numeral 4 is a filled ceramic powder.

The HIP processing capsule is composed of a bottomed stainless steel capsule 1 and a cylindrical target holder 2 disposed therein, and these are provided at predetermined positions, that is, at the center of the bottom of the bottomed stainless steel capsule 1, a cylindrical target. The holder is welded and fixed. The HIP treatment capsule is preferably steel or stainless steel, and the thickness of the capsule is preferably 4 mm or less.

Further, the HIP-treated capsule 1 suppresses a reaction in sintering of the ceramic layer filled in the capsule in the HIP treatment step and facilitates release from the ceramic layer after the HIP treatment. Therefore, alumina fiber paper (0.5 mm to 1 mm thick) or a sheet may be attached to the inner surface of the HIP-treated stainless capsule 1.

The ceramic powder is filled in the gap between the stainless capsule 1 and the cylindrical target holder 2. Alternatively, by using the cylindrical target holder 2 that has been surface-treated in advance, the cylindrical target holder 2 is placed in a CIP (cold isostatic pressing) molding rubber mold, and the ceramic powder is filled in the gap between the cylindrical target holder 2 and the preliminary CIP. A molding method can also be adopted.

According to the above-mentioned method, the ceramic powder filled in the HIP-treated stainless capsule or the ceramic compact preliminarily CIP-molded on the cylindrical target holder is placed in the HIP-treated capsule, and the HIP-treated stainless steel is placed. The capsule is vacuum-sealed to 10 ^-3 mmHg or less. This is because the gas and components adhering to the ceramic raw material powder are not sufficiently removed at 10 ^-3 mmHg or more in this vacuum sealing.

This vacuum-sealed stainless steel HIP capsule is placed in a HIP device for HIP treatment. In the HIP process, an inert gas (Ar) under high temperature and high pressure is used as a pressure medium to simultaneously sinter the ceramic powder inside the capsule and the preformed ceramic compact and join the ceramic layer and the target holder at the same time. The HIP processing conditions at this time are a temperature of 900 to 1200 ° C. and a pressure of 50.
It is desirable to perform the treatment for 1 hour or more under the condition of MPa or more. H
If the temperature is 900 ° C. or lower and the pressure is 50 MPa or lower under the IP treatment conditions, the density of the ceramic layer is low and the adhesion to the target holder is low, and if the temperature is 1200 ° C. or higher, the reaction with the target holder becomes vigorous, which is not preferable.

The HIP-processed stainless steel HIP-treated capsules thus obtained are taken out from the HIP device, and the outer stainless-steel capsules are peeled off to obtain a ceramic rotating cathode target. In this way, it is possible to obtain a dense ceramic rotating cathode having a ceramic layer of 2 mm or more and 10 mm or less and having high adhesion to the target holder.

[0045]

In the present invention, Ga ₂ O ₃ in the target layer is
Exists as a Ga solid solution ZnO phase, it becomes easy to replace Ga atoms in the formed film with Zn atom positions in the film formed by sputtering, and it is possible to reduce Ga atoms existing between the atoms. It is considered that a low resistance film having extremely high crystallinity can be formed, and a transparent conductive film having high heat resistance and low resistance can be obtained even in an atmosphere containing oxygen such as air.

The target for rotary cathode sputtering thus prepared is homogeneous without any change in the chemical composition of the target and has good heat conduction from the target material to the target holder and further to the cathode electrode.
Also, because it firmly adheres to the target holder,
Even when high sputtering power is applied to increase the film formation rate, sufficient cooling is performed, and there is no peeling or cracking of the target layer due to a sudden heat shock, and it is possible to apply a large amount of power per unit area. .

Further, since the erosion zone of the target is the entire surface, there is an advantage that the utilization efficiency of the target is higher than that of the planar type. Further, even if the eroded portion of the target is thinned, the portion in which the target material is reduced can be regenerated to the original state by HIPing the ceramic powder of the same material by the same method. Further, it is possible to easily give the distribution of the thickness of the target depending on the location, and by doing so, it is possible to control the strength distribution of the magnetic field and the distribution of temperature on the target surface to control the thickness distribution of the thin film formed.

Further, the ceramic rotating cathode target of the present invention can be used for DC, RF and magnetron sputtering.
It can be used for both sputtering devices, high-speed film formation, high target use efficiency, and stable film formation.

[0049]

Example High-purity ZnO powder (average particle size 1 μm or less)
And Ga ₂ O ₃ powder (average particle size 1 μm or less) are prepared,
Weigh each composition so that each composition will be
The sludge obtained by wet mixing for 3 hours with water as a medium was granulated using a spray dryer to obtain a powder having an average particle size of 80 μm.

A copper cylindrical target holder having an outer diameter of 67.5 mmφ and a length of 406 mm was attached to a lathe, the outer surface side was processed into a screw shape, and the surface was sandblasted using Al ₂ O ₃ abrasive grains. The surface is rough and rough.

Next, as an undercoat, the first layer Ni-A was used.
1 (mixing weight ratio 8: 2) alloy powder and M as the second layer
Plasma spraying of metal powder of o (using Metco spraying machine)
Then, coatings each having a film thickness of 50 mm were formed.

The cylindrical target holder subjected to this surface treatment was placed in a stainless capsule for HIP treatment, the inner surface of which was previously adhered with Al ₂ O ₃ fiber paper (1 mm thickness), and the bottom portion was welded and joined to the HIP. Treated capsules were prepared. The gap between the capsule and the cylindrical target holder was vibratingly filled with the above Ga ₂ O ₃ —ZnO granulated powder using a vibrator. Then, the inside of the stainless steel capsule was depressurized to 10 ⁻³ mmHg or less, sealed, and inserted into a HIP processing apparatus to perform HIP processing.

As the HIP treatment conditions, Ar gas (purity 99.9%) having a temperature of 1000 ° C. and a pressure of 200 MPa was used as a pressure medium, and the treatment was carried out for 1 hour. After HIP treatment, the stainless steel capsule was removed, and the outer surface of the Ga ₂ O ₃ -ZnO ceramic cylindrical target was processed to be smooth.
It was processed into 0.5 mmφ to obtain a rotating cathode target having a ceramic layer of 5 mm in which the Ga ₂ O ₃ —ZnO ceramics and the target holder were firmly adhered to each other.

Next, using this rotating cathode target and a magnetron sputtering apparatus, Ga
_{A 2} O ₃ —ZnO film was formed. The formation conditions are such that sputtering is performed in a vacuum of about 5 × 10 ⁻³ Torr in an Ar atmosphere, and the substrate is a non-alkali glass Corning # 7059.
Was used to obtain a film thickness of about 500 nm. After the film formation, the film thickness and the sheet resistance were measured, and the specific resistance of the film was calculated from the film thickness and the sheet resistance. In addition, the formed film is 50 in air.
After heat treatment under the condition of holding at 0 ° C. for 10 minutes, the specific resistance of the film was measured to evaluate the heat resistance in air.

Further, the film deposition rate was also compared with a target obtained by joining the above target to a planar type target holder by a conventional method. The results are shown in Table 1.

As shown in Table 1, the film formed by using the rotating target of the present invention has a small specific resistance, and the specific resistance remains the same even in the heat treatment at 500 ° C. in air, and the specific resistance is low. there were. During sputtering, no abnormal discharge, no damage to the target, no black soot (a phenomenon in which the target surface becomes black due to a decrease in the amount of oxygen on the target surface due to sputtering), and stable high-speed film formation is possible. It was

[0057]

[Comparative Example] As shown in Table 1, Ga ₂ O ₃ —ZnO prepared by a normal atmospheric pressure sintering method and conventional ITO (10 w
t% SnO ₂ -90 wt% In ₂ O ₃ ) and AZO
The results of the planar target of (3 wt% Al ₂ O ₃ -97 wt% ZnO) and the rotating cathode target having a composition outside the scope of the present invention in the Ga ₂ O ₃ —ZnO system are also shown.

According to Table 1, ITO, AZO planar targets, and Ga ₂ O ₃ --ZnO outside the scope of the present invention.
In the case of a rotating cathode target of the system, 500 in air
It was found that the heat resistance at ℃ significantly increased the specific resistance of the film and the heat resistance was low. Further, with ITO, black soot was generated during sputtering, and continuous film formation was impossible. Further, in the case of ITO and AZO planar targets, cracking occurred on the target surface due to power-up for increasing the film formation rate, and the film formation rate could not be increased.

[0059]

[Table 1]

[0060]

As is apparent from the above, by using the target of the present invention, a transparent conductive film having high heat resistance can be easily obtained even in an atmosphere containing oxygen such as air. Further, in the target of the present invention, since Ga ₂ O ₃ in the target exists as a Ga solid solution ZnO phase, there is almost no blackening during use, and there is little change over time such as an increase in the specific resistance of the film even after long-term use. It is possible to form a stable and high-speed film.

Further, the target of the present invention is homogeneous and has a high density and is resistant to heat shock, and does not require the conventional steps of molding, firing, processing, bonding, etc., and can easily form any shape of the sputtering target in a short time. Can accommodate the structure.

By using the sputtering target of the present invention, even if the cooling efficiency during sputtering is high and the sputtering power is increased, there is no cracking or damage to the target, which enables stable high-speed film formation at low temperatures and various displays. Transparent electrodes such as elements, solar cells, and light-receiving elements, heat ray reflective films for construction and automobiles, selective transmission films and electromagnetic wave shielding films, as well as anti-fogging and waterproofing of automobiles, frozen showcases, and other construction It is most suitable as a transparent heating element, a photomask, an antistatic film for construction, etc., and can be applied to an extremely wide range of fields, and its industrial value is great.

[Brief description of drawings]

FIG. 1 is a sectional view of an example of a HIP processing capsule used in the present invention.

[Explanation of symbols]

1: Stainless steel capsule 2: Surface-treated copper cylindrical target holder 3: Al ₂ O ₃ ceramics fiber paper 4: Filled ceramics powder

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location C04B 35/48 // B22F 7/00 Z

Claims (10)

[Claims] 1. An undercoat is formed on a cylindrical target holder, and then a powder containing ZnO as a main component and containing 1 to 10% of Ga ₂ O ₃ or a molded body of the powder is placed, and hot isotropy is performed. A method of manufacturing a rotating cathode target, comprising forming a ceramics layer by press-pressing. 2. The surface of the cylindrical target holder is
The method of manufacturing a rotating cathode target according to claim 1, wherein the method has a rough surface. 3. The undercoat has a layer having a coefficient of thermal expansion intermediate between the coefficient of thermal expansion of the cylindrical target holder and the coefficient of thermal expansion of the ceramics layer, and a coefficient of thermal expansion similar to the ceramics layer. The method for producing a rotating cathode target according to claim 1 or 2, wherein the rotating cathode target is at least one layer selected from the group consisting of layers. 4. The undercoat is formed by a plasma spraying method.
A method of manufacturing a rotating cathode target according to the item. 5. Formed by placing a powder containing ZnO as a main component and containing Ga ₂ O ₃ in an amount of 1 to 10% or a molded body of the powder on a cylindrical target holder and performing hot isostatic pressing. Rotating cathode target having a ceramic layer that is formed. 6. The surface of the cylindrical target holder is
The rotating cathode target according to claim 5, wherein the rotating cathode target has a rough surface. 7. The cylindrical target holder and ZnO
Between the ceramic layer formed on the cylindrical target holder by arranging a powder containing Ga ₂ O ₃ as a main component of 1 to 10% or a molded body of the powder and performing hot isostatic pressing. 7. The rotating cathode target according to claim 5, wherein the rotating cathode target has an undercoat. 8. The undercoat has a layer having a coefficient of thermal expansion intermediate between the coefficient of thermal expansion of the cylindrical target holder and the coefficient of thermal expansion of the ceramics layer, and a coefficient of thermal expansion similar to that of the ceramics layer. 8. The rotating cathode target according to claim 7, wherein the rotating cathode target is at least one layer selected from the group consisting of layers. 9. The rotating cathode target according to claim 7, wherein the undercoat is formed by a plasma spraying method. 10. A film formed by sputtering using the rotating cathode target according to claim 5.