CN1402885A - Intersystem crossing agents for efficient utilization of excitons in organic light emitting device - Google Patents

Intersystem crossing agents for efficient utilization of excitons in organic light emitting device Download PDF

Info

Publication number
CN1402885A
CN1402885A CN00810562A CN00810562A CN1402885A CN 1402885 A CN1402885 A CN 1402885A CN 00810562 A CN00810562 A CN 00810562A CN 00810562 A CN00810562 A CN 00810562A CN 1402885 A CN1402885 A CN 1402885A
Authority
CN
China
Prior art keywords
molecule
emission
layer
intersystem crossing
phosphorescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN00810562A
Other languages
Chinese (zh)
Other versions
CN1221040C (en
Inventor
S·R·弗莱斯特
M·E·汤普森
M·A·巴尔多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Princeton University
University of Southern California USC
Original Assignee
Princeton University
University of Southern California USC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Princeton University, University of Southern California USC filed Critical Princeton University
Publication of CN1402885A publication Critical patent/CN1402885A/en
Application granted granted Critical
Publication of CN1221040C publication Critical patent/CN1221040C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18Carrier blocking layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/10Triplet emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/348Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising osmium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom

Abstract

Organic light emitting devices are described wherein the emissive layer comprises a host material containing a fluorescent or phosphorescent emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, wherein an intersystem crossing molecule of optical absorption spectrum matched to the emission spectrum of the emissive molecule enhances emission efficiency.

Description

Help the intersystem crossing agent of effective utilization of exciton in organic light emitting apparatus
I. the field of the invention
The present invention relates to organic light emitting apparatus (OLED), it is formed by containing as the emission layer of the organic compound of emitter and independent intersystem crossing (" the ISC ") entity that is used to strengthen emission effciency.
II. background of the present invention
II.A. general background
Organic light emitting apparatus (OLED) is made up of several organic layers, and wherein one deck causes that by device being applied voltage electroluminescent organic material forms people such as C.W.Tang, Appl.Phys.Lett.1987,51,913 by a kind of.Some OLED has shown for have enough brightness, color gamut and working life (S.R.Forrest as the actual substitute technology of LCD type full color flat-panel monitor, P.E.Burrows and M.E.Thompson, LaserFocus World, February nineteen ninety-five).Because many in the thin organic membrane that uses in these devices are transparent in the visible range, they make it possible to achieve novel display pixel fully, wherein red (R), the OLED of green (G) and blue (B) light emission type provides simple manufacture process with the geometry setting of vertical stacking, little R-G-B pixel size, with big packing factor, international patent application No.PCT/U595/15790.
Represented towards a marked improvement that realizes high-resolution, independent addressable stack R-G-B pixel, transparent OLED (TOLED) has report in international patent application No.PCT/US97/02681, wherein this TOLED when closing, have greater than 71% transparency and when device is connected with high efficiency (near 1% quantum efficiency) from device surface emission bright dipping up and down.This TOLED uses transparent indium tin oxide (ITO) to be used for the electronics injection as hole injecting electrode and Mg-Ag-ITO electrode layer.Disclose a kind of device, wherein the ITO side of Mg-Ag-ITO electrode layer is used as hole injection contact layer, so that pile up second different colored light emission OLED on TOLED.Each layer in piling up OLED (SOLED) be addressing independently with the emission itself the feature color.This colored emission light can see through adjacent stacks, transparent, independently addressable organic layer, transparent contact layer and glass baseplate, therefore can make device launch the light of any color, this light can be by changing red and the relative power output blue light emission layer produces.
The PCT/US95/15790 patent application integrated SOLED that openly knows clearly, it can be in the display unit of color tunable changes independently with external power and controls light intensity and color.Therefore the PCT/US95/15790 patent application has illustrated and has obtained integrated, full color pixel so that the principle of high image definition (making it to become possibility by fine and closely woven pixel size) to be provided.And with the art methods sealing, the manufacturing technology of lower cost can be used for making this type of device.
II.B. the background of luminous element
II.B.1. basic condition
I1.B.1.a. singlet and triplet exciton
Because what only the decay of the excited state of molecule or exciton produced in organic material, be appreciated that their character and interact for being unusual key in the design of at present significant efficient light-emitting device because of potential using value is arranged in display, laser and other illumination are used.For example, if the symmetry of exciton is different from the symmetry of ground state, then the radiation relaxation of exciton be prevented from luminous be slow and inefficient.Because it is normally antisymmetric that ground state comprises at electronics under the exchange of spin of exciton, symmetry has been broken in the decay of the exciton of symmetry.This type of exciton is known as triplet, and this term has reflected the degree of degeneration of state.For in OLED, being excited formed per three triplet excitons, only produce a symmetrical state (or singlet) exciton by electricity.(M.E.Thompson and S.R.Forrest cause the green organic luminescent device of phosphorescent extreme efficiency based on electricity for M.A.Baldo, D.F.O ' Brien, Applied PhysicsLetters, and 1999,75,4-6).The luminous phosphorescence that is known as of the process of forbidding from symmetry.On characteristic, phosphorescence can be maintained until many several seconds after exciting, and this is owing to the low probability that changes.On the contrary, in the rapid attenuation of singlet exciton, produce fluorescence.Because this process is to take place between the state of similar symmetry, it is very efficiently.
Many organic materials demonstrate the function of sending fluorescence from singlet exciton.Yet, to have confirmed only severally, they also can realize that room temperature is phosphorescent efficiently from triplet.Therefore, in most fluorescent dye, the energy that contains in triplet has been wasted.Yet if this triplet excited state multilated, for example, by spin(-)orbit coupling (typically the existence because of heavy metal atom causes), phosphorescence is more likely efficiently.In this case, this triplet exciton presents some singlet features and has the high probability of attenuation to ground state.In fact, the phosphorescent dyestuff with these character has proved to have high efficiency electroluminescence function.
Have only a few organic material to be identified and demonstrate from the phosphorescent performance of the efficient room temperature of triplet.On the contrary, many fluorescent dyes are known (C.H.Chen, J.Shi.and C.W.Tang, " latest development of molecule organic electroluminescent material (Recent developments inmolecular organic electroluminescent materials) ", Macromolecular Symposia, 1997,125,1-48; U.Brackmann, Lambdachrome Laser Dyes (Lambda Physik, Gottingen, 1997) and the efficient that fluoresces in solution are not common near 100% situation.(C.H.Chen,1997,op,cit)。The influence that fluorescence is not buried in oblivion by triplet-triplet yet, it descends at high excitation density and hangs down the phosphorescence emission.(people such as M.A.Baldo, " from the high efficiency phosphorescent emissions (High efficiency phosphorescent emission fromorganic electroluminescent devices) of organic electro luminescence device ", Nature, 1998,395,151-154; M.A.Baldo, M.E.Thompson, and S.R.Forrest, " causing the analytical model that triplet-triplet is buried in oblivion in the phosphorescent device ", 1999 at electricity).Therefore, fluorescent material is suitable for many electroluminescent application, and particularly the passive type matrix shows.
II.B.1.b. relevant with basic condition the present invention's general introduction
The present invention relates to the purposes of the emission effciency of intersystem crossing agent in strengthening organic light emitting apparatus.Intersystem crossing agent or molecule are the materials that can carry out intersystem crossing, and it involves the transfer of cluster between the state of different spin multiplicities (population).The known intersystem crossing agent or the catalogue of molecule are listed in A.Gilbert and J.Baggott, the essence of molecular photochemistry (Essentials of Molecular Photochemistry), BlackwellsScientific, 1991.
In one embodiment of the invention, the inventor efforts be made so that with the intersystem crossing agent and improves efficient in having the system of fluorescigenic emitter.Here the inventor has described a kind of technology, and the triplet that wherein forms in host material is not wasted, but transfers to the single line excited state of fluorescent dye.Utilize the gross efficiency of all excited states and fluorescence to improve four times by this way.In this embodiment, this ISC agent is caught the energy of exciton and is utilized the Forster energy transfer principles that energy is transferred in the fluorescigenic emitter.The energy needed transfer process is:
3D*+ 1A→ 1D+ 1A*(Eq.1)
Here, D and A represent donor molecule and fluorescent receptor respectively.This subscript 3 and 1 represents that respectively triplet and singlet and asterisk represent excited state.
In second embodiment of the present invention, the inventor efforts be made so that with the intersystem crossing agent and improves efficient in having the system of phosphorescent emitter.Here the inventor has described a kind of technology, and wherein the ISC agent is responsible for then this excited state being transferred in the phosphorescent emitter be transformed into their triplet state from all excitons of host material.This comprises following situation: wherein the singlet exciton on the host is only caught in the ISC agent, and host's triplet exciton is directly transferred in the phosphorescent emitter (rather than via the ISC agent.)
Strengthen therein in this second embodiment of phosphorescence efficient, the use that combines with the intersystem crossing agent of phosphorescent emitter, so that following situation can take place:
1D*+ 1X→ 1D+ 1X*
1X*→ 3X*
3X*+ 1A→ 1X+ 3A*
3A*→ 1A+hv
Wherein D represents to body (host), and X represents that intersystem crossing agent and A represent acceptor (molecule of emission).Subscript 1 expression singlet spin multiplicity; Excited state represented in subscript 3 expression triplet spin multiplicities and this asterisk.
In the 3rd embodiment of the present invention, the inventor efforts be made so that with the intersystem crossing agent and raises the efficiency as filter and converter.Aspect of this filter/converter embodiment, this intersystem crossing agent is used for singlet exciton and is transformed into triplet exciton, thereby make singlet can't arrive emitting area and therefore strengthen optical purity (" filter " aspect: singlet is removed and does not therefore have singlet to launch) and raised the efficiency (" transformation " aspect: singlet is transformed into triplet, and it can be launched).
These embodiments discuss in more detail in the following embodiments.Yet these embodiments can be by different mechanism operations.Be not intended to limit the scope of the invention, the inventor discusses different mechanism.
II.B.1.c.Dexter and Forster mechanism
Understand different embodiment of the present invention, be convenient to discuss the basic mechanics theory that energy shifts.Transfer to acceptor molecule for energy two mechanism have been discussed usually.First mechanism of supporting at Dexter (D.L.Dexter, " theory of sensitized luminescence in the solid ", J.Chem.Phys., 1953,21,836-850) in, this exciton directly jumps to another molecule from a molecule.This is the MO overlapping short-term method that depends on adjacent molecule.It has also been protected and has given body and right symmetry (E.Wigner and the E.W.Wittmer of acceptor, Uber dieStruktur der zweiatomigen Molekelspektren nach derQuantenmechanik, Zeitschrift fur Physik, 1928,51,859-886; M.Klessinger and J.Michl, the excited state of organic molecule and photochemistry (VCHPublishers, New York, 1995).Therefore, the transfer of the energy of Eq. (1) is impossible for utilizing Dexter mechanism.(T.Forster, Zwischenmolekulare Energiewanderung and Fluoreszenz, Annalen der Physik, 1948.2,55-75 in second mechanism that Forster shifts; T.Forster, Fluoreszenzorganischer Verbindugen (Vandenhoek and Ruprecht, Gottinghen, 1951), it is possible that the energy of Eq. (1) shifts.In Forster shifts, be similar to transmitter and antenna, can be coupled for dipole on body and the acceptor molecule and energy can shift.Allowed transition (allowed transitions) from give body and acceptor molecule produces dipole.This has typically limited the Forster mechanism between singlet.
Yet, in one embodiment of the invention, the inventor need consider to allow to the transformation on the body ( 3D *1D) promptly be the situation of phosphorescent molecules to body.As what discuss already, the probability of this transformation is low, because the symmetrical difference between triplet that excites and ground state singlet.
Even so, as long as make that phosphor can be luminous because some of state upset the spin(-)orbit coupling that causes as heavy metal atom, then it shifts as participating in Forster to body.The efficient of this method is (F Wilkinson, in Advances inPhotochemistry (W.A.Noyes, G.Hammond and J.N.Pitts volume, pp.241-268, the John Wiley ﹠amp by the luminous efficiency decision of phosphor; Sons, New York, 1964), if promptly radiation transistion is than non-radiative decay more likely, then the energy transfer is efficiently.This triplet-singlet shifts by Forster prophesy (T.Forster, " transfer mechanism of electron excitation ", the discussion (Discussions of the Faraday Society) of faraday association, 1959,27,7-17) and by Ermolaev and Sveshnikova confirm (V.L.Ermolaev and E.B.Sveshnikova, " energy inducing from the aromatic hydrocarbon molecule of triplet state-resonance transfer (Inductive-resonance transfer of energy from aromaticmolecules in the triplet state) ", Doklady Akademii Nauk SSSR, 1963,149,1295-1298), they use some phosphorescence to give the detected energy transfer under 77K or 90K in rigid media of body and fluorescent receptor.Observe big transfer distance: for example, as being used as acceptor to body and chrysoidine (chrysoidine), interaction volume is 52 dusts for triphenylamine.
The residue condition that Forster changes is, if excitation state and ground state molecule between energy level be in resonance state, then absorption spectrum should be overlapping should be to emission spectrum of body.In the application's embodiment 1, the inventor uses i.e. three (2-phenylpyridine) iridium (Ir (ppy) of green phosphor 3People such as M.A.Baldo, Appl.Phys.Lett., 1999,75,4-6) and red fluorescence dyestuff [2-methyl-6-[2-(2,3,6,7-tetrahydrochysene-1H, 5H-benzo [ij] quinolizine-9-yl) vinyl]-4H-pyrans-and fork base] propane-dintrile] (" DCM2 "; C.W.Tang, S.A.VanSlyke and C.H.Chen, " electroluminescence of the organic membrane of doping ", and J.Appl.Phys., 1989,65,3610-3616).DCM2 absorbs in the green district and depends on local polarisation field (people such as V.Bulovic, " based on the spectrum of polarization-induce move bright, saturated, red-to-yellow organic luminescent device ", Chem.Phys.Lett., 1998,287,455460), it is transmitted in the wavelength between λ=570nm and the λ=650nm.
Also might implement to shift by fluorescigenic object is doped in the phosphorescent host material from the Forster energy of triplet state.Regrettably, this type of system is subjected to reducing the influence of the competitive energy transfer mechanism of gross efficiency.Especially, host and object arrives the possibility that the Dexter between the object triplet shifts near having improved the host.In case exciton reaches the object triplet state, they lose effectively, because these fluorescent dyes typically demonstrate extremely inefficient phosphorescence.
Another approach is to be doped in the host material for body and fluorescent receptor simultaneously phosphorescence.This energy can be connected from the host (cascade), by phosphor sensitizing molecule with arrive fluorescent dye, according to following equation group (in general Eq.2):
3D*+ 1X→ 1D+ 3X*
3X*+ 1A→ 1X+ 1A*
1A*→ 1A+hv (2a)
1D*+ 1X→ 1D+ 1X*
1X*→ 3X*
3X*+ 1A→ 1X+ 1A*
1A*→ 1A+hv (2b)
Wherein X represents that sensitizer molecule and hv are photon energies.
Needed multimode energy shifts and schematically is described among Fig. 1 in the system of phosphorescent sensitizing.The Dexter transfer is represented by dotted arrow and the Forster transfer is represented by solid arrow.The transfer that causes loss in efficiency is to mark with cross.Except the energy route of metastasis that shows in the drawings, directly electronics-hole recombination is possible for phosphorescent and fluorescigenic dopant and host.Triplet exciton formation is another potential loss mechanism after the charge recombination on fluorescent dye.
In order to make the transfer from host's triplet to the fluorescent dye singlet reach maximization, the Dexter that hope will arrive the triplet state of phosphor shifts maximization, and the transfer of the triplet state that arrives fluorescent dye is minimized.Because Dexter mechanism shifts energy between adjacent molecule, the concentration that reduces fluorescent dye will reduce the probability of transferring to this dyestuff from triplet-triplet.On the other hand, the Forster that transfers to singlet that grows distance shifts unaffected.On the contrary, the triplet of transferring to phosphor is that to control host's triplet needed, and can improve by the concentration that improves phosphor.In order to prove that this multimode shifts, the inventor uses 4,4 '-N, and N '-two carbazoles-biphenyl (" CBP ") is as this host (D.F.O*Brien, M.A.Baldo, M.E.Thompson and S.R.Forrest, " causing improved energy transfer (Improved energy transfer in electrophosphorescent devices) in the phosphorescent device ", Appl.Phys.Lett. at electricity, 1999,74,442-444), Ir (ppy) 3As phosphorescent sensitizer and DCM2 as fluorescent dye.This doping content is for Ir (ppy) 3Be 10% and be 1% for DCM2.
The details that provides among the embodiment 1 has shown the improvement on fluorescigenic efficient by utilizing phosphorescent sensitizer to bring below.In several afterwards joints, the inventor provides additional background.
II.B.2. the correlation of device architecture and emission
Its structure is that this type of device based on the use of organic photoelectrical material layer generally depends on and causes luminous common mechanism.Typically, this mechanism is based on the radiation reorganization of trap-charge.Specifically, OLED is made up of at least two thin organic layers of the anode of separating this device and negative electrode.One material in these layers is specially to select according to the ability in this transmission of materials hole, " hole transmission layer " (HTL) and the material of another layer be specially to select according to the ability of this transmission of materials electronics, " electron transfer layer " (ETL).For such structure, when the electromotive force that puts on anode was higher than the electromotive force that puts on negative electrode, this device can be regarded the diode with forward bias as.Under these bias conditions, this anode is with hole (positive carrier) injected hole transport layer, and negative electrode injects electron transfer layer with electronics.Therefore formed the hole with the part of the luminescence medium of anode adjacency and injected and transmission range, injected and transmission range and formed electronics with the part of the luminescence medium of negative electrode adjacency.Institute's injected holes and electronics move towards the electrode of oppositely charged separately.In the time of on electronics and hole are positioned at a part, formed Frenkel exciton (Frenkel exciton).The reorganization of this short-lived state can be envisioned as under certain condition, preferably passes through photoemission mechanism, and electronics is fallen valence band from its conduct electricity potential drop, takes place lax simultaneously.According to this viewpoint of typical thin layer organic device operation principle, electroluminescence layer comprises the luminous zone of accepting mobile charge charge carrier (electronics and hole) from each electrode.
As already pointed out, launch typically via fluorescence or phosphorescence from the light of OLED.For using phosphorescence to run into various problems.Be pointed out that phosphorescent efficient descends fast under high current density.This may be cause the emission position the long phosphorescent duration saturated, and triplet-triplet is buried in oblivion also and may be caused loss in efficiency.In another difference between fluorescence and the phosphorescence is that the energy of the triplet on from the conductivity main body to luminous guest molecule shifts the energy that typically is lower than singlet and shifts; Dipole-dipole the coupling (Forster transfer) of the long distance that the energy of dominant force singlet shifts, (in theory) has been under an embargo for triplet owing to the principle of the symmetrical conservation of spin.Therefore, for triplet, energy shifts typically to be diffused on the adjacent molecule (Dexter transfer) by exciton and carries out; It is crucial giving abundant overlapping the transfer for energy of body and acceptor exciton wavefunction (wavefunctions).Another problem is that the triplet diffusion length is typically grown (for example>1400 dust), compares with the typical singlet diffusion length of about 200 dusts.Therefore, if phosphorescent device in order to bring into play their potentiality, then device architecture need be optimized for triplet character.In the present invention, the inventor utilizes long this character of triplet diffusion length to improve external quantum efficiency.
The successful utilization of phosphorescence has great application prospect for organic electro luminescence device.For example, the advantage of phosphorescence is whole excitons (reorganization by hole among the EL and electronics forms), and they are (part) triplet types in the phosphorescent device, can participate in energy transfer and luminous in some electroluminescent material.On the contrary, the exciton (belonging to the singlet type) of only a small amount of percentage causes the luminous of fluorescing property in fluorescigenic device.
Yes-no decision is to use phosphorescent method to improve the efficient of fluorescent method.On principle, the efficient of fluorescence is low by 75%, this be because than the number Senior Three of symmetrical excitation state doubly more than.In one embodiment of the invention, by using the fluorescent material of phosphorescent sensitizing molecular excitation in the OLED that glows, the inventor has overcome this problem.In the mechanism of the energy between molecule individuality coupling is that long distance, radiationless energy on from the phosphor to the fluorescent dye shifts.By using this technology, the internal efficiency of fluorescence can be up to 100%, and this is that the former phosphorescence of only using can obtainable result.Shown in embodiment 1, the inventor almost uses it with four times of the efficient of fluorescigenic OLED.
II.C. the background of material
II.C.1. basic hybrid structure
Because typically have at least one electron transfer layer and at least one hole transmission layer, then have each layer of different material, formed hybrid structure.Produce this electroluminescent light emission effect material can with as electron transfer layer or identical as the material of hole transmission layer.Wherein electron transfer layer or hole transmission layer also are known as single hybrid structure (heterostructure) as this type of device of luminescent layer.In addition, electroluminescent material may reside in the independent luminescent layer between hole transmission layer and electron transfer layer, and this is known as two hybrid structures.This independent emission layer can contain the emitting molecule or the emission layer that are doped among the host mainly to be made up of emitting molecule.
Promptly, except in charge carrier layer, promptly in hole transmission layer or in electron transfer layer, exist as key component and simultaneously as electric charge carrier material and emissive material emissive material, this emissive material can also be present in the charge carrier layer as dopant with low concentration.Have whenever dopant, the main material in charge carrier layer can be called host's compound or be called accepts compound.Material as host and dopant existence require it to have the energy transfer of the higher level from host to the dopant material when selecting.In addition, these material requires can produce acceptable electrical property for OLED.In addition, this host and dopant material preferably can be introduced among the OLED by using some materials, and this material can be by manufacturing technology easy to use, especially by using evaporating deposition technique to be easily introduced among the OLED.
I1.C.2. exciton confining bed
Therefore (with disclosed in US patent application serial numbers No.09/154.044 in the past) this exciton confining bed that uses in device of the present invention has been blocked the diffusion of exciton basically, basically exciton is remained in the reflector and enhance device efficient.The material of confining bed of the present invention is that lowest unoccupied molecular orbital (LUMO) (LUMO) with it and the capacity volume variance (" band gap ") between its highest occupied molecular orbital(HOMO) (HOMO) are feature.According to the present invention, this band gap has stoped the diffusion of exciton in whole confining bed basically, and the connection voltage of electroluminescent devices is completely only had minimum influence.Therefore this band gap is preferably greater than the energy level of the exciton that produces in emission layer, this type of exciton can not be present in the confining bed like this.Specifically, the band gap of confining bed is the same with the capacity volume variance between the ground state big with triplet the host at least.
For main body and the situation that confining bed is arranged between the electron transfer layer (the same) with the situation in following examples 1 in conduction hole, seek following characteristic, they are to list by the order of relative importance.
In the LUMO of confining bed and the capacity volume variance between the HOMO greater than in the triplet of host material and the capacity volume variance between the ground state singlet.
2. the triplet in the host material is not by this confining bed quencher.
3. the ionization potential of confining bed (ionization potential) is greater than host's ionization potential.(meaning the hole is retained among the host.)
4. the energy level of the energy level of the LUMO of confining bed and host's LUMO is enough approaching on energy, makes to have on total conductance of device to be lower than 50% variation.
5. this confining bed should be thin as much as possible, but the thickness of this layer is enough to block effectively the transmission of exciton from the emission layer to the adjacent layer.
That is, in order to seal exciton and hole, the ionization potential of confining bed should be greater than the ionization potential of HTL, and the electron affinity of confining bed should be substantially equal to the electron affinity of ETL, so that electronics transmits with comparalive ease.
[use the situation of emissivity (" emission ") molecule for there not being the hole transport host, more than can modify by word " emitting molecule " replacement " host " for the rule of the selection of confining bed.]
For the complementarity situation of the confining bed between electrical conductivity host and hole transmission layer, can seek following characteristic (order by importance is listed):
In the LUMO of confining bed and the capacity volume variance between the HOMO greater than in the triplet of host material and the capacity volume variance between the ground state singlet.
2. the triplet in the host material is not by this confining bed quencher.
3. the energy of the LUMO of confining bed is greater than the energy of (electric transmission) host's LUMO.(meaning electronics is retained among the host.)
4. the ionization potential of confining bed and host's ionization potential should make the hole easily inject the host from sealer, and has on total conductance of device and be lower than 50% variation.
5. this confining bed should be thin as much as possible, but the thickness of this layer is enough to block effectively the transmission of exciton from the emission layer to the adjacent layer.
[use the situation of emissivity (" emission ") molecule for there not being the electric transmission host, more than can modify by word " emitting molecule " replacement " host " for the rule of the selection of confining bed.]
II.D. color
As for color, wish using provides the material of electroluminescent emission effect to make OLED in than narrow band between two parties near selected spectral regions, a kind of color in the corresponding three primary colors of selected spectral regions (red, green and blue), this material can be used as the color layer among OLED or the SOLED like this.Wish also this compounds that evaporating deposition technique can be used and easily be deposited as thin layer that so that they are incorporated among the OLED easily, the latter is fully from vacuum-deposited organic material preparation.
The US08/774 of unexamined, relate in 333 (on December 23rd, 1996) contains the OLED that can produce saturated red photoemissive those light emitting compounds.
III. general introduction of the present invention
On the most general level, the present invention relates to comprise the organic light emitting apparatus of emission layer, emission layer launching molecule wherein, for host material (wherein this launching molecule is provided in this host material as dopant) when this molecule when hybrid structure applies voltage can be luminous, wherein launching molecule be selected from phosphorescent or fluorescigenic organic molecule and wherein this device comprise can be as the molecule (" ISC molecule ") of intersystem crossing agent, it has improved the efficient of phosphorescence or fluorescence, for the situation that does not have the ISC molecule to exist.Preferably this launching molecule is different with this intersystem crossing molecule, and preferably between launching molecule and intersystem crossing molecule sufficient spectra overlapping is arranged.
Strengthen therein in first embodiment of the efficient that fluoresces, the use that combines with phosphorescent sensitizer of fluorescigenic emitter, the latter is as the intersystem crossing agent.This phosphorescent sensitizer can be selected from wherein radiation recombination rates those materials more much bigger than non-radiative recombination rates.This phosphorescent sensitizer can be selected from Cyclometalated organo-metallic compound.Any other metal or metallic compound that its metal can be selected from the metal (especially tungsten, platinum, gold, iridium, osmium) of the third line of periodic table and have strong spin(-)orbit coupling.Phosphorescent sensitizer further is selected from phosphorescent organic metal iridium or osmium complex and further is selected from phosphorescent Cyclometalated iridium or osmium complex again.The particular instance of sensitizer molecule is fac three (2-phenylpyridine) iridium with following formula, is expressed as (Ir (ppy) 3):
[in the figure of this figure and back, the inventor has described that the coordinate bond of (being Ir) is a straight line from nitrogen to the metal here.)
The particular instance of fluorescigenic emitter is the DCM2 with following formula
Figure A0081056200161
Strengthen therein in second embodiment of phosphorescent efficient, the use that combines with the intersystem crossing agent of phosphorescent emitter, so that following situation can take place:
1D*+ 1X→ 1D+ 1X*
1X*→ 3X*
3X*+ 1A→ 1X+ 3A*
3A*→ 1A+hv
Wherein D represents to body (host), and X represents that intersystem crossing agent and A represent acceptor (molecule of emission).Subscript 1 expression singlet spin multiplicity; Excitation state represented in subscript 3 expression triplet spin multiplicities and this asterisk.
In the 3rd embodiment of the present invention, the thin layer of ISC agent is placed in this device; It can be between HTL and ETL.Select the ISC agent, make that the optical absorption spectra of ISC agent is overlapping strongly with the spectral line of emission of the material of finding on the position of reorganization.
The general arrangement of the hybrid structure of device should make that the order of each layer is a hole transmission layer, emission layer, and electron transfer layer.For the emission layer of conduction hole, can between emission layer and electron transfer layer, have the exciton confining bed.For the emission layer of conduction electron, can between emission layer and hole transmission layer, have the exciton confining bed.This emission layer can equal hole transmission layer (exciton confining bed near anode or be on the anode) in this case, or equal electron transfer layer (this exciton confining bed near negative electrode or be on the negative electrode) in this case.
This emission layer can form with host material, and wherein Fa She molecule as the object residence wherein.Host material can be to be selected from the hole transport matrix that replaces triarylamine.The example of host material is 4,4 '-N, and N '-two carbazoles-biphenyl (CBP), it has following general formula
The layer of this emission also contains the polarization molecule, is present in the host material neutralization as dopant and has dipole moment, and can influence institute's wavelength of light emitted when this emissivity dopant molecule is luminous.
The layer that is formed by the electric transmission material is used for the emission layer of electric transmission to the host material that comprises this launching molecule and should choose wantonly.This electron transport material can be the electric transmission matrix that is selected from metal quinoxaline Yan, oxadiazole (oxidazoles) and triazole.The electric transmission examples of substances is three-(oxine) aluminium (Alq 3).
The layer that is formed by the hole transport material is used for the emission layer of hole transport to the host material that comprises this launching molecule and should choose wantonly.The hole transport examples of substances is 4, two [N-(1-the naphthyl)-N-phenyl-amino] biphenyl [" α-NPD "] of 4-.
It is very preferred using exciton confining bed (" barrier layer ") to be confined to exciton in the luminescent layer (" luminous zone ").For the hole transport host, confining bed can be placed between luminescent layer and the electron transfer layer.The examples of substances of this type of barrier layer is 2,9-dimethyl-4, and 7-diphenyl-1,10-phenanthroline (being also referred to as bathocuproine or BCP), it has following general formula
IV. the summary of accompanying drawing
Fig. 1. the energy transfer mechanism of in multilevel hierarchy, being advised.Ideally, when the triplet in the fluorescent dye was carried out the non-radiation type reorganization, whole exciton transfers was to the singlet of fluorescent dye.The Forster transmission represents that by straight line transmission is illustrated by the broken lines with Dexter.Electronics-hole recombination produces singlet and triplet exciton in host material.These excitons are transferred on phosphorescent sensitizer then.Transfer to singlet or Dexter transfers to triplet by Forster, the probability of directly transferring in the fluorescent dye is lower.The source that this back one mechanism is loss and it are represented by " fork " in the drawings.Singlet exciton in the phosphor is carried out intersystem crossing (ISC) then and is transferred to triplet.From this state, this triplet can with the singlet generation dipole-dipole coupling of fluorescent dye, or in another loss mechanism, they can transfer to triplet by Dexter.It is pointed out that also that for phosphor and fluorescent dye electronics-hole recombination also is possible.The direct formation of triplet is the loss that adds on fluorescent dye.Illustration. the structure of the electroluminescent devices of in this research, making.Multiple doped layer and the mixed layer of CBP are close: 10%Ir (ppy) 3: 1%DCM2.Also make two modification.Second device: Ir (ppy) 3With Alq 3Exchange checks that intergrade is fluorescigenic and is not phosphorescent situation.The 3rd device: individually, make the device of the luminescent layer that contains CBP: 1%DCM2, check the direct transfer between CBP and DCM2.
Fig. 2. the external quantum efficiency of DCM2 emission in three devices.Ir (ppy) 3Sensibilization improve this efficient significantly.Also be pointed out that Alq in whole devices that fluoresces 3Existence almost do not make a difference.
Fig. 3. in the spectrum of three devices, observed characteristic peak: CBP (λ-400nm), TPD (λ-420nm), Alq 3(λ-490nm), Ir (ppy) 3(λ-400nm) and DCM2 (λ-590nm).At Ir (ppy) 3About 80% photon is to be launched by DCM2 in the device.Whole spectrums is at~1mA/cm 2Current density under write down.
Fig. 4. at CBP:10%Ir (ppy) 3: DCM2 and Ir (ppy) in the 1%DCM2 device 3The transient response of component.Life-span moment of DCM2 is~1 nanosecond (ns), therefore for from Ir (ppy) 3The situation that middle energy shifts, the response of DCM2 should be by Ir (ppy) 3Life-span moment decision.In the wide electric excitation pulse of this initial 100ns, this obviously is to have illustrated that energy is from Ir (ppy) 3In triplet transfer to the situation of the singlet among the DCM2.Yet in the excitation pulse process, observed singlet and transferred to DCM2, caused " ripple (ripples) " in transient response.These ripples result from the fluctuation of current density and the discharge of trap (traps) on the landing edge of pulse.It must be noted that, at DCM2 and Ir (ppy) 3Trend in the transient response finally has difference slightly.Reorganization takes place and causes luminous owing to a little charge that is trapped on the DCM2 molecule in this.
Fig. 5. between ETL and HTL, contain the schematic diagram of device of the interlayer of ISC agent.
Fig. 6. the IV characteristic of the device of in embodiment 5/ Fig. 5, describing.
V. detailed description of the present invention
The present invention relates to organic light emitting apparatus (OLED), it is by containing organising as emitter The emission layer of compound and be used for to strengthen independent intersystem crossing (" the ISC ") molecule of emission effciency Form. Described some embodiments, they have strengthened fluorescigenic emitter and phosphorescent The emission effciency of emitter.
Preferably, between this ISC molecule and launching molecule, sufficient spectra overlapping is arranged. Survey A kind of method of amount spectra overlapping is to the Absorption and emission spectra district in the scope of energy (wave number) Integration (integrating), two spectral regions have nonzero value in this scope. This mode with At A.Shoustikov, Y.You, and M.E.Thompson are " at organic light-emitting diodes Utilize dye adulterated electroluminescent color adaptation (Electroluminescence Color in the pipe Tuning by Dye Doping in Organic Light Emitting Diodes) ", amount The IEEE periodical 1998,4 of sub-electronics thematic role, the side that takes in the equation 2 (a) of 3-14 Formula is relevant. A kind of mode is the integrated intensity that Absorption and emission spectra is normalized into it. Two Spectral regions have in the energy range of nonzero value by the branch of the spectrum of standardization (normalized) Amount (product) is carried out integration. This scope is got and is made 180 nanometers to 1.5 micron wave lengths. If This value is at least 0.01 and more preferably at least 0.05, and sufficient spectra overlapping is then arranged.
Also preferably, between the absorption spectrum of the emission spectrum of host material and ISC agent, have and fill The spectra overlapping that divides. Have in the energy range of nonzero value by standardized spectrum at two spectral regions Component (product) carry out integration. This scope is got and is made 180 nanometers to 1.5 micron wave lengths. If this value is at least 0.01 and more preferably at least 0.05, sufficient spectra overlapping is arranged then.
The present invention is existing to be described in detail for particular preferred embodiment of the present invention.It should be understood that the embodiment of these embodiments as just the purpose of giving an example, the present invention is not limited to them.
V.A. strengthen the use of the ISC agent of fluorescent emission
V.A.1. the general introduction of first embodiment
Embodiment of the present invention generality relates to the phosphorescent property sensitizer of using for the fluorescent emission molecule, when its understands luminous when the organic light-emitting device hybrid structure applies voltage, this sensitizer is selected from phosphorescent organometallic complex, and the correlation molecule that relates to some structures He these structures of the emission of having optimized luminescent device.This term " organic metal " is generally as skilled in the art to understand, for example at " inorganic chemistry (InorganicChemistry) " (second edition), Gary L.Miessler and Donald A.Tarr, given definition among the Prentice-Hall (1998).The invention further relates to the sensitizer in the organic light-emitting device luminescent layer, this sensitizer molecule is made up of phosphorescent Cyclometalated complex of iridium.The discussion of the color form of color comprises the narration of CIE article, sees H.Zollinger.Color Chemistry, VCH publishing house, 1991 and H.J.A.Dartnall, J.K.Bowmaker. and J.D.Mollon, Proc.Roy.Soc.B (London), 1983,220,115-130.
V.A.2. the embodiment of first embodiment
Embodiment 1,2 and 3 organic light-emitting device structure are shown in the illustration of Fig. 1.
Embodiment 1
Utilize high vacuum (10 -6Torr) thermal evaporation deposits organic layer on the cleaning glass substrate of 1400 dust thick coatings of the tin indium oxide that scribbles transparent and conduction in advance.N, N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-[1,1-biphenyl]-4,600 dust thick layer of 4-diamines [" TPD "] are used for hole transport to luminescent layer.This luminescent layer is to be doped to Ir (ppy) by CBP 310 dust thick layer of 10% (quality) and the alternate series of 10 dust thick layer of 1% (quality) that CBP is doped to DCM2 form.Assembled 10 doped layers altogether, gross thickness is 100 dusts.Exciton is sealed material 2 by exciton, 9-dimethyl-4, and 7-diphenyl-1,200 dust thick layer of 10-phenanthroline (being also referred to as bathocuproine or BCP) are confined in the light-emitting zone.Electric transmission material three-(oxine) aluminium (" Alq 3") 300 dust thick layer be used for electric transmission to light-emitting zone with reduce absorption on negative electrode.Baffle with 1mm diameter opening is used for definite negative electrode of being made up of the 1000 dust thick layer of 25: 1 Mg: Ag, has the capping layer of 500 dust thickness.Compound I r (ppy) 3[sensitizer among the embodiment 1/ISC agent] has following structural formula:
The comparative example 2
In contrast, same device among making and the embodiment 1, just Ir (ppy) 3By Alq 3Replace, the latter has similar emission and absorption spectrum, but does not at room temperature have observable phosphorescence.
The comparative example 3
As second contrast, made with embodiment 1 in same device, just be used to detect the intermediate energy transfer step that the DIRECT ENERGY from CBP to DCM2 shifts and be omitted.
Embodiment 1,2 and 3 result
In Fig. 2, provided the external quantum efficiency (photon/each electronics) of each embodiment as the function of the injection current of the DCM2 of emission spectrum part.The DCM2 emission effciency that contains the device of phosphorescent sensitizer is significantly higher than its fluorescigenic analog.In fact, the peak efficiencies of (3.3 ± 0.1) % be significantly higher than in front the research for DCM2 viewed~2% optimum (C.H.Chen, C.W.Tang, J.Shi, and K.P.Klubeck, " organic light-emitting device improves the dopant (Improved red dopants for organicluminescent devices) that glows ", macromolecule collection of thesis (Macromolecular Symposia), 1997,125,49-58)).This has proved that in embodiment 1, host's triplet is transferred to fluorescigenic singlet.The comparison that has more quantitative property as the raising in emission that causes by sensitizer, the inventor notices the difference on the quantum efficiency of DCM2 emission, wherein in not having this embodiment of phosphorescent sensitizer peak efficiency be 0.9 ± 0.1% and having among this embodiment of phosphorescent sensitizer be 3.3%[referring to Fig. 2 and in comparative example 2 Alq 3At CBP: the interpolation in the DCM2 device.]。Sensitizing is 3.7 ± 0.4 with the ratio of the efficient of sensitizing device not, this and the device that the probability that participates in for wherein singlet and triplet equates, four (4) the value of being estimated between the emission of (singlet+triplet) to (only singlet) [i.e. (1+3)/(1+0)] is very approaching.
The emission spectrum of the OLED of three embodiment provides in Fig. 3.All devices show that all energy transfers on the fluorescent dye.By taking the area under each spectrum peak, the inventor finds containing Ir (ppy) 3About 80% photon is to be launched by DCM2 in the device of sensitizer.Remainder belongs at~400 nanometers CBP luminous, and is luminous and at~the Ir of 500nm place (ppy) at~420 nanometers TPD 3Luminous.At the 10%Alq that mixed 3Device in, observe emission peak in~490 nanometers.Alq among this and the nonpolar host (CBP) 3The observed result unanimity of emission.(V.Bulovic, R.Deshpande, M.E.Thompson, and S.R.Forrest, " utilize solid solvents to turn into ", Chemical PhysicsLetters (1999) with regulating film molecule organic light-emitting device colored light emission (Tuningthe color emission of thin film molecular organic light emittingdevices by the solid state solvation effect).
The conclusive evidence of energy transfer process is shown among Fig. 4 in Eq.2, and it has illustrated the DCM2 of emission spectrum and the transient characterisitics of Ir (ppy) component.These data be by electroluminescence device is applied~the 100ns electric pulse obtains.The emission that is obtained is measured with streak camera.If the part of DCM2 emission is by from Ir (ppy) 3(energy) transfer produces in the triplet (Eq.2), and the energy of then being advised shifts the DCM2 fluorescence that must obtain postponing.And, because the radiation lifetime of DCM2 is than Ir (ppy) 3Much shorter radiation lifetime, the transition of DCM2 decay should with Ir (ppy) 3Transition decay coupling.After initial peak, most probable is because singlet-singlet shifts (Eq.2), and DCM2 decays in fact at Ir (ppy) 3After the decay.Ir in this system (ppy) 3The transient state life-span be~100ns, when not having DCM2~life-span of 500ns forms contrast, confirmed~80% energy shifts.Because it is desirable that energy is transferred to the shortening of the triplet lifetime that fluorescent receptor causes.Not only its improves the transient response of system, and it has also shown square being inversely proportional to of probability that triplet-triplet is buried in oblivion and triplet lifetime.(M.A.Baldo, M.E.Thompson, and S.R.Forrest, " causing the analytical model that triplet-triplet is buried in oblivion in the phosphorescent device " (1999)) at electricity.Therefore, can expect that this multistage energy shifts the quencher that will reduce triplet, has further promoted the potentiality of high efficiency sensitized fluorescence in view of the above.
These three embodiment have illustrated the general technology of the fluorescence efficiency in improvement object-host's organic system.By mixing host, phosphorescent sensitizer and fluorescent dye, rather than with this research in mix in the identical thin layer, can expect further improvement, shift though this thin layer mode has suppressed the direct Dexter of triplet from host to the fluorogen, they are with lossy in this process.In order further to reduce the loss in the multistage energy transfer, desirable system can add the sterically hindered dyestuff of low concentration.For example, in the DCM2 molecule, introduce the interval group and should reduce the probability that Dexter transfers to dyestuff, participate in Forster transfer or its luminous efficiency and meanwhile influence to minimum degree its.Because shift when Dexter shifts and can be understood that electronics and hole, the sterically hindered electric charge that also can reduce is captured on possibility on the fluorescent dye.Same effort has reduced the formation [Chen of non-radiative excimers in the DCM2 modification, Tang, Shi and Klubeck, " improvement used of organic EL device glow dopant (Improvedred dopants for organic EL Devices) ", the macromolecule collection of thesis, 1997,125,49-58].Simultaneously, the optimization of device architecture will make Ir (ppy) 3Emission is reduced to reduced levels.
V.B. strengthen the use of the ISC agent of phosphorescent emissions
V.B.1. the general introduction of second embodiment
Second embodiment has related to wherein, and launching molecule is phosphorescent and the situation of the purposes of the efficient of intersystem crossing molecule enhancing phosphorescent emissions.
V.B.2. the embodiment of second embodiment
Embodiment 4 portentous
Make OLED, it has traditional diamines hole transferring agent and the electron transfer layer of being made up of three kinds of different materials (ETL).This ETL is 80% conditional electronic transport materials (as Zrq4) roughly, and 15% intersystem crossing agent is (as diphenylthanedione; Other ISC agent can be seen in the document of Gilbert and Baggott) and 5% phosphorescent emissions body (as PtOEP, octaethylporphyrin platinum).Select the ISC agent, require its absorption spectrum overlapping with the fluorescence spectrum of ETL consumingly.Both hole and electron reorganization occur on the HTL/ETL interface or near, produce the mixture of singlet and triplet exciton.Efficiently their energy is transferred in the ISC agent in the singlet exciton on the ETL, through n → π *State or some other suitable processes, they will be efficiently intersystem crossing to their triplet.
The triplet energies of ISC agent is transferred to then in the dopant and on the phosphorescent dopant and is launched.To directly transfer on the dopant or energy is transferred in the ISC agent at the triplet exciton that forms on the ETL, then energy be transferred on the described dopant.The designated next complete quencher singlet exciton of ISC agent has in this application obtained the good yield for triplet exciton is transferred on the phosphorescent dopant.
Zrq 4Chemical formula be
Figure A0081056200241
V.C. the intersystem crossing agent is as the purposes of filtering agent and conversion agent
V.C.1. the general introduction of the 3rd embodiment
In the 3rd embodiment of the present invention, the thin layer of ISC agent is placed between HTL and the ETL.Select the ISC agent, make that the optical absorption spectra of ISC agent is overlapping strongly with the spectral line of emission of the material of finding on the position of reorganization.
In control experiment discussed below, the inventor uses 2, and 7-diphenyl Fluorenone (" ISC-F ") is as this ISC agent.The ISC agent that is suitable for filtering agent/conversion agent example can be selected from acridine, acridone, the polycyclic aromatic compound of bromination, anthraquinone, alpha-beta-diketone, azophenlyene, benzoquinones, biacetyl, fullerene (fullerene), thiophene, pyrazine, quinoxaline, and thianthrene.
V.C.2. the embodiment of the 3rd embodiment
Embodiment 5
In Fig. 5 and 6, the inventor provides the control experiment of the device that does not have phosphorescent dopant emitter.The embodiment of the 3rd embodiment can have the phosphorescent emitter in the ETL layer.
The structural representation ground of the device of this embodiment provides in Fig. 5.It is by having α-NPD/ISC-F/Alq 3Structure form.(Alq 3Layer does not mix).The IV characteristic of device provides in Fig. 6.Here, this device area is 3.14mm 2Key point is to locate there is not light low to medium displacement (bias).The result shows that ISC filtering agent/conversion agent understands the quencher singlet certainly.[, observe the emission of PaleGreen light at very high displacement (>17 volts).It comes from Alq the spectrum explanation of this output 3In order to explain emission, under high displacement, there is electronics to spill and arrives Alq 3Or ISC-F gets back to Alq with the energy transfer 3In singlet.]
In device for the 3rd embodiment of the present invention, Alq 3Mix with phosphorescent emitter in the zone.The inventor can know that triplet exciton has been injected into Alq efficiently 3In the layer, this is owing to the caused phosphorescent emissions of emitter of mixing.
In embodiment of the present invention of being considered, 2,7-diphenyl Fluorenone (" ISC-F ") arrives α-NPD/ISC-F interface with electric transmission.On this interface or near hole/electron recombination will obtain singlet and triplet exciton simultaneously.These two kinds of excitons are transferred in the ISC-F layer easily.Transfer in the ISC-F layer (forming therein) any singlet apace intersystem crossing to triplet.Therefore, existing whole exciton will be transferred to triplet efficiently in device.
Specifically, this triplet exciton will diffuse through this ISC-F layer and transfer to Alq 3Layer.Transfer to Alq 3On become easy.Though Alq 3Triplet energies do not know for sure, but can believe between 550 and 600 nanometers.This catches the triplet exciton from ISC-F accurately and efficiently in appropriate zone.Use this ISC agent by this way, the inventor can stop singlet exciton can't arrive the emitting area of device forever.By with phosphorescent dye adulterated this emitting area, the inventor has extracted energy with illumination mode efficiently.This ISC agent as filtering agent, only allows triplet exciton to be injected into Alq here 3In the layer.The requirement of this type of ISC filtering agent/conversion agent is, singlet that it had and triplet energies all are lower than on recombinable site or the (energy of this material of α-NPD) in this embodiment in its vicinity, and the triplet energies that is had is higher than emitting area, and (it must not be at recombinable site, Alq in the present embodiment 3).This material must have high ISC efficient.
V.D. other discussion
V.D.1. spectra overlapping
In embodiments of the invention, between launching molecule and this intersystem crossing molecule, spectra overlapping should be arranged.Overlapping character depends on the use of this device, and its use comprises giant display, vehicle, computer, TV, printer, large tracts of land wall, arenas or stadium display screen, billboard and annunciator.For the display application of device of the present invention, in the visible range, spectra overlapping should be arranged.Use for other,, do not need emission spectrum and alpine light eye response (photopic response) overlapping as the use in press of this device.
V.D.2. other example of the sensitizer of first embodiment/ISC agent
The example of the present invention that strengthens fluorescent emission is not limited to the sensitizer molecule of this embodiment.Can consider to use the metal complex that enough spin(-)orbit couplings are wherein arranged, make the process that is allowed that the radiation relaxation be arranged.In the middle of ligand, the those of ordinary skill in the affiliated field can be to Ir (ppy) 3The organic component modification of (following directly provide) is to obtain required performance.
Figure A0081056200261
Aromatic structure can have alkyl substituent or to the atom change of aromatic structure.
With Ir (ppy) 3These relevant molecules can commercially available from the market ligand form.This R group can be alkyl or aryl and preferably be in 3,4,7 and/or 8 of ligand (owing to the reason of aspect, space).
Other possible sensitizer is listed below:
This a part estimates to have the emission of blue shift, with Ir (ppy) 3Compare.R and R ' can be alkyl or aryls independently.
The organo-metallic compound of osmium can be used among the present invention.Example be following these.
These osmium complexs be octahedron with 6d electronics (with the Ir analog be isoelectronic) and have good intersystem crossing efficient.R and R ' are independently selected from alkyl and aryl.Can believe they in the literature the report.
Figure A0081056200281
Here X can be selected from N or P, and R and R ' are independently selected from alkyl and aryl.
V.D.3. other molecule narration
The molecule of hole transmission layer of the present invention is described following.
The present invention can be used from the hole transmission layer of OLED with known other hole transport molecule one of those of ordinary skill.
Molecule as the host material in the emission layer of the present invention is described below.
Figure A0081056200283
The present invention can be used as the host material of the emission layer of OLED with other known molecule of those of ordinary skill.For example, this host material can be hole transport matrix and triaryl amine and the polyvinylcarbazole that is selected from replacement.
Molecule as the exciton confining bed of embodiment 1 is described below.The present invention can use with other molecule that is used for the exciton confining bed, as long as they satisfy given requirement here.
V.D.4. the purposes of device
OLED of the present invention can be used in the device of being made up of OLED of any kind basically, for example is used for being introduced in the OLED series of giant display, medium, computer, TV, printer, large tracts of land wall, arenas or stadium display screen, billboard or signature board.
The present invention disclosed herein use that can combine with some pendent patent applications: " high reliability, high efficiency, can be integrated organic luminescent device and produce its method (HighReliability; High Efficiency; Integratable Organic LightEmitting Devices and Methods of Produeing Same) ", sequence number No.08/774,119 (December 23 in 1996 filed an application); " new material of look light-emitting diode (Novel Materials for Multicolor Light Emitting Diodes) ", sequence number No.08/850,264 (on May 2nd, 1997 filed an application); " based on the electric transmission and the luminescent layer (Electron Transporting and Light EmittingLayers Based on Organic Free Radicais) of organic free radical ", sequence number No.08/774,120 (on December 23rd, 1996); " multicolor display device (Multicolor DisplayDevices) ", sequence number No.08/772.333 (on December 23rd, 1996 filed an application); " organic luminescent device that glows (Red-Emitting Organic Light EmittingDevices (OLED)) "; Sequence number No.08/774,087 (on December 23rd, 1996 filed an application); " stack organic light-emitting device exciting circuit (Driving Circuit ForStacked Organic Light Emitting Devices) ": sequence number No.08/792,050 (application on February 3rd, 1997); " high efficiency OLED structure (High EfficiencyOrganic Light Emitting Device Structures) ", sequence number No.08/772,332 (on December 23rd, 1996 filed an application); " vacuum deposition, non-polymeric flexible organic luminescent device (Vacuum Deposited, Non-Polymeric FlexibleOrganic Light Emitting Devices) ", sequence number No.08/789,319 (applications on January 23rd, 1997); " display (Displays HavingMesa Pixel Configuration) " with Mesa pixel configuration, sequence number No.08/794,595 (applications on February 3rd, 1997); " stack organic luminescent device (Stacked Organic LightEmitting Devices) ", sequence number No.08/792,046 (application on February 3rd, 1997); " high-contrast transparent organic light emitting devices (High Contrast TransparentOrganic Light Emitting Devices) ", sequence number No.08/792,046 (application on February 3rd, 1997); " the transparent organic illuminator display of high-contrast (High ContrastTransparent Organic Light Emitting Device Display) ", sequence number No.08/821,380 (applications on March 20th, 1997); " contain the organic luminescent device (Organic Light EmittingDevices Containing A Metal Complex of 5-Hydroxy-Quinoxaline asA Host Material) of the metal complex of 5-hydroxyl-quinoxaline " as host material, sequence number No.08/838,099 (application on April 15th, 1997); " has high brightness light-emitting devices (Light Emitting Devices Having HighBrightness) ", sequence number No.08/844,353 (applications on April 18th, 1997); " organic semiconductor laser (Organic Semiconductor Laser) ", sequence number No.08/859,468 (applications on May 19th, 1997); " saturated panchromatic stack organic luminescent device (Saturated Full Color Stacked Organic Light EmittingDevices) ", sequence number No.08/858,994 (applications on May 20th, 1997); " plasma treatment of conductive layer (Plasma Treatment of Conductive Layers) ", PCT/U597/10252, (on June 12nd, 1997); " new material of multi-color LED (Novel Materials for Multicolor Light Emitting Diodes) ", sequence number No.08/814,976, (application on March 11st, 1997); " new material of multi-color LED (Novel Materials for Multicolor Light EmittingDiodes) ", sequence number No.08/771,815, (application on December 23rd, 1996); " design (Patterning of ThinFilms for the Fabrication of Organic Multi-color Displays) of film that is used for the manufacturing of organic multicolor display ", PCT/US97/10289, (application on June 12nd, 1997), " the infrared and vertical cavity surface emitting organic laser (Double Heterostructure Infrared andVertical Cavity Surface Emitting Organic Lasers) of two hybrid structures ", application attorney docket (Attorney Docket No) .10020/35 (application on July 18th, 1997), it is for reference that each pendent application is introduced into this paper with its full content.

Claims (19)

1. comprise the organic luminescent device that is used for luminous hybrid structure, it comprises emission layer,
Wherein this emission layer is the assembly of host material and the launching molecule that exists as dopant in this host material:
Wherein when when hybrid structure applies voltage, launching molecule can be luminous; With
Wherein this hybrid structure comprises the intersystem crossing molecule, so that strengthen emission effciency by transition molecule between using system.
2. the organic luminescent device of claim 1, wherein the emission spectrum of intersystem crossing molecule the is overlapping basically absorption spectrum of launching molecule.
3. comprise the organic luminescent device that is used for luminous hybrid structure, it comprises emission layer,
Wherein this emission layer is the assembly of the conductivity host material and the molecule that fluoresces that exists as dopant in this host material:
Wherein when when hybrid structure applies voltage, launching molecule can be luminous; With
Wherein this hybrid structure comprises the intersystem crossing molecule that belongs to the high efficiency phosphorescent body, and its emission spectrum is overlapping with the absorption spectrum of launching molecule basically.
4. the emission layer of claim 3, wherein this intersystem crossing molecule is Ir (ppy) 3
5. the device of claim 3, wherein fluorescigenic molecule is DCM2.
6. the device of claim 1, wherein launching molecule is phosphorescent.
7. the device of claim 2, wherein launching molecule is phosphorescent.
8. the device of claim 6, wherein launching molecule is Pt0EP.
9. the device of claim 1 wherein has a thin layer that comprises the intersystem crossing agent, and wherein this thin layer is placed between hole transmission layer and the electron transfer layer.
10. the device of claim 2, wherein this launching molecule is phosphorescent and can suppresses emission from singlet comprising the thin layer of intersystem crossing agent.
11. the device of claim 2, wherein this launching molecule is phosphorescent and can strengthens the triplet emission comprising the thin layer of intersystem crossing agent.
12. comprise the organic luminescent device that is used for luminous hybrid structure, it comprises:
The emission layer that comprises host material; With
Launching molecule is present in this host material as dopant, can be luminous when the both sides along hybrid structure apply voltage;
Hole transmission layer;
Electron transfer layer; With
The intersystem crossing agent wherein has sufficient spectra overlapping between the absorption spectrum of the emission spectrum of intersystem crossing agent and launching molecule.
13. the device of claim 12 is wherein with respect to having launching molecule but do not have that emission effciency has improved for the device of intersystem crossing agent.
14. have the device of the claim 12 of exciton confining bed.
15. the device of claim 14, wherein this exciton confining bed comprises 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.
16. the device of claim 12, wherein this launching molecule is that fluorescigenic and this intersystem crossing agent is the organo-metallic compound that comprises the metal of the third line of periodic table.
17. the device of claim 12, wherein launching molecule is phosphorescent.
18. the device of claim 12, wherein this launching molecule is that phosphorescent and intersystem crossing agent meeting suppresses the emission from singlet.
19. the organic luminescent device of claim 1, it is used for giant display, vehicle, computer, TV, printer, large tracts of land wall, arenas or stadium display screen, billboard and annunciator.
CNB008105626A 1999-07-21 2000-07-20 Intersystem crossing agents for efficient utilization of excitons in organic light emitting device Expired - Lifetime CN1221040C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/358,731 1999-07-21
US09/358,731 US6310360B1 (en) 1999-07-21 1999-07-21 Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices

Publications (2)

Publication Number Publication Date
CN1402885A true CN1402885A (en) 2003-03-12
CN1221040C CN1221040C (en) 2005-09-28

Family

ID=23410802

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008105626A Expired - Lifetime CN1221040C (en) 1999-07-21 2000-07-20 Intersystem crossing agents for efficient utilization of excitons in organic light emitting device

Country Status (8)

Country Link
US (3) US6310360B1 (en)
EP (1) EP1204994B1 (en)
JP (1) JP4571359B2 (en)
KR (1) KR100858274B1 (en)
CN (1) CN1221040C (en)
AT (1) ATE522939T1 (en)
AU (1) AU6113800A (en)
WO (1) WO2001008230A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100364139C (en) * 2003-11-17 2008-01-23 中国科学院长春应用化学研究所 Method for preparing glow rare earth organic complex electroluminescent device
US7474049B2 (en) 2005-03-23 2009-01-06 Au Optronics Corp. Organic electroluminescent device
CN107112419A (en) * 2014-11-05 2017-08-29 学校法人冲绳科学技术大学院大学学园 Doping engineering hole transmission layer for the device based on perovskite
CN112913040A (en) * 2018-11-05 2021-06-04 三星显示有限公司 Organic light emitting device
US11690238B2 (en) 2017-10-27 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device

Families Citing this family (337)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices
JP3924648B2 (en) * 1999-11-02 2007-06-06 ソニー株式会社 Organic electroluminescence device
JP4197814B2 (en) 1999-11-12 2008-12-17 シャープ株式会社 LED driving method, LED device and display device
US6899961B2 (en) * 1999-12-15 2005-05-31 Samsung Sdi Co., Ltd. Organic electroluminescence device
US6821645B2 (en) * 1999-12-27 2004-11-23 Fuji Photo Film Co., Ltd. Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex
KR100721656B1 (en) * 2005-11-01 2007-05-23 주식회사 엘지화학 Organic electronic devices
JP3904793B2 (en) * 2000-02-23 2007-04-11 パイオニア株式会社 Organic electroluminescence device
US6660410B2 (en) * 2000-03-27 2003-12-09 Idemitsu Kosan Co., Ltd. Organic electroluminescence element
JP2001284049A (en) * 2000-03-31 2001-10-12 Fuji Photo Film Co Ltd Color conversion membrane and light emitting device using it
JP4048521B2 (en) * 2000-05-02 2008-02-20 富士フイルム株式会社 Light emitting element
KR20010104215A (en) * 2000-05-12 2001-11-24 야마자끼 순페이 A method of manufacturing a light emitting device
TW536836B (en) * 2000-05-22 2003-06-11 Semiconductor Energy Lab Light emitting device and electrical appliance
JP5062797B2 (en) * 2000-05-22 2012-10-31 昭和電工株式会社 Organic electroluminescence device and light emitting material
US7339317B2 (en) 2000-06-05 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US20030143427A1 (en) * 2000-06-13 2003-07-31 Mikiko Matsuo Exciton forming substance, luminescent material using the substance, method for light emission and luminescent element, and device using the element
US7129518B2 (en) * 2000-06-30 2006-10-31 E.I. Du Pont De Nemours And Company Electroluminescent iridium compounds with fluorinated phenylpryidines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
US7132681B2 (en) * 2000-06-30 2006-11-07 E. I. Du Pont De Nemours And Company Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
US6939624B2 (en) * 2000-08-11 2005-09-06 Universal Display Corporation Organometallic compounds and emission-shifting organic electrophosphorescence
US6911271B1 (en) * 2000-08-11 2005-06-28 The University Of Southern California Organometallic platinum complexes for phosphorescence based organic light emitting devices
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4344494B2 (en) * 2000-08-24 2009-10-14 富士フイルム株式会社 Light emitting device and novel polymer element
US6864628B2 (en) * 2000-08-28 2005-03-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound
US6893743B2 (en) * 2000-10-04 2005-05-17 Mitsubishi Chemical Corporation Organic electroluminescent device
WO2002045466A1 (en) * 2000-11-30 2002-06-06 Canon Kabushiki Kaisha Luminescent element and display
SG148030A1 (en) * 2000-12-28 2008-12-31 Semiconductor Energy Lab Luminescent device
TW545080B (en) * 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US20020093006A1 (en) * 2001-01-16 2002-07-18 Vardeny Z. Valy Performance of organic light-emitting devices using spin-dependent processes
TW518909B (en) * 2001-01-17 2003-01-21 Semiconductor Energy Lab Luminescent device and method of manufacturing same
TW519770B (en) * 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
CN100430515C (en) 2001-02-01 2008-11-05 株式会社半导体能源研究所 Sediment appts. and sediment method
SG118110A1 (en) 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
TWI225312B (en) * 2001-02-08 2004-12-11 Semiconductor Energy Lab Light emitting device
US20030010288A1 (en) * 2001-02-08 2003-01-16 Shunpei Yamazaki Film formation apparatus and film formation method
US7432116B2 (en) * 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
SG118118A1 (en) * 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
EP1389203B8 (en) * 2001-02-27 2010-03-10 The Governement of the United States of America, represented by The Secretary Department of Health and Human services Analogs of thalidomide as angiogenesis inhibitors
JP4994564B2 (en) * 2001-03-02 2012-08-08 ザ、トラスティーズ オブ プリンストン ユニバーシティ Double doped layer phosphorescent organic light emitting device
JP4438042B2 (en) 2001-03-08 2010-03-24 キヤノン株式会社 Metal coordination compound, electroluminescent element and display device
AU2002306698A1 (en) 2001-03-14 2002-09-24 The Trustees Of Princeton University Materials and devices for blue phosphorescence based organic light emitting diodes
JP4307001B2 (en) * 2001-03-14 2009-08-05 キヤノン株式会社 Metal coordination compound, electroluminescent element and display device
EP3333876A1 (en) * 2001-05-16 2018-06-13 The Trustees of Princeton University High efficiency multi-color electro-phosphorescent oleds
JP2002352960A (en) * 2001-05-29 2002-12-06 Hitachi Ltd Thin-film electroluminescent device
CN100428524C (en) 2001-06-15 2008-10-22 佳能株式会社 Organic electroluminescence device
JP4006266B2 (en) * 2001-06-15 2007-11-14 キヤノン株式会社 Light emitting device and method for manufacturing light emitting device
US6791258B2 (en) * 2001-06-21 2004-09-14 3M Innovative Properties Company Organic light emitting full color display panel
CN100440529C (en) * 2001-08-09 2008-12-03 出光兴产株式会社 Organic electroluminescent display device and driving method thereof
EP2555274B1 (en) * 2001-08-29 2020-06-24 The Trustees of Princeton University Organic light emitting devices having carrier blocking layers comprising metal complexes
EP1421828B1 (en) * 2001-08-29 2015-10-14 The Trustees Of Princeton University Organic light emitting devices having carrier transporting layers comprising metal complexes
KR100439648B1 (en) * 2001-08-29 2004-07-12 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device
US6716656B2 (en) * 2001-09-04 2004-04-06 The Trustees Of Princeton University Self-aligned hybrid deposition
JP2003086376A (en) * 2001-09-06 2003-03-20 Nippon Hoso Kyokai <Nhk> Organic electroluminescence device and its manufacturing method
JP2003123968A (en) * 2001-10-15 2003-04-25 Univ Toyama Method for producing organic electroluminescent element
JP3823312B2 (en) * 2001-10-18 2006-09-20 日本電気株式会社 Organic thin film transistor
US6737177B2 (en) * 2001-11-08 2004-05-18 Xerox Corporation Red organic light emitting devices
US6863997B2 (en) 2001-12-28 2005-03-08 The Trustees Of Princeton University White light emitting OLEDs from combined monomer and aggregate emission
DE60331704D1 (en) * 2002-04-12 2010-04-29 Konica Corp Organic light-emitting element
US6653654B1 (en) 2002-05-01 2003-11-25 The University Of Hong Kong Electroluminescent materials
US6931132B2 (en) * 2002-05-10 2005-08-16 Harris Corporation Secure wireless local or metropolitan area network and related methods
DE10224021B4 (en) * 2002-05-24 2006-06-01 Novaled Gmbh Phosphorescent light emitting device with organic layers
JP3902981B2 (en) * 2002-06-04 2007-04-11 キヤノン株式会社 Organic light emitting device and display device
US20030230980A1 (en) * 2002-06-18 2003-12-18 Forrest Stephen R Very low voltage, high efficiency phosphorescent oled in a p-i-n structure
US7332739B2 (en) * 2002-06-20 2008-02-19 Samsung Sdi Co., Ltd. Organic electroluminescent device using mixture of phosphorescent material as light-emitting substance
KR100483986B1 (en) * 2002-06-20 2005-04-15 삼성에스디아이 주식회사 Organic polymer electroluminescent display device using phosphresecnce mixture as emiting material
US7074534B2 (en) 2002-07-10 2006-07-11 E. I. Du Pont De Nemours And Company Polymeric charge transport compositions and electronic devices made with such compositions
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
DE60224267T2 (en) * 2002-08-14 2009-01-08 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method for determining the temperature of a system
TW556446B (en) * 2002-09-11 2003-10-01 Opto Tech Corp Organic light-emitting device and the manufacturing method thereof
US20040067324A1 (en) * 2002-09-13 2004-04-08 Lazarev Pavel I Organic photosensitive optoelectronic device
WO2004028217A1 (en) * 2002-09-20 2004-04-01 Idemitsu Kosan Co., Ltd. Organic electroluminescent element
KR100650046B1 (en) * 2002-11-20 2006-11-27 엘지전자 주식회사 High efficient organic electroluminescent device
US20060051611A1 (en) * 2002-12-13 2006-03-09 Koninklijke Philips Electronics N.V. Electroluminescent device
AU2003289000A1 (en) * 2002-12-19 2004-07-14 Semiconductor Energy Laboratory Co., Ltd. Organometal complex, electroluminescent element containing the organometal complex and luminescent device including the electroluminescent element
EP1578886A2 (en) * 2002-12-24 2005-09-28 Elam-T Limited Electroluminescent materials and devices
CN101510589B (en) * 2002-12-26 2013-01-23 株式会社半导体能源研究所 Organic light emitting element
JP2006520409A (en) * 2003-02-12 2006-09-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Carbazole compounds and the use of such compounds in organic electroluminescent devices
KR100501702B1 (en) * 2003-03-13 2005-07-18 삼성에스디아이 주식회사 Organic electroluminescent display device
KR101391117B1 (en) 2003-03-24 2014-04-30 유니버시티 오브 써던 캘리포니아 Phenyl-pyrazole complexes of ir
US20040199052A1 (en) 2003-04-01 2004-10-07 Scimed Life Systems, Inc. Endoscopic imaging system
US7862906B2 (en) 2003-04-09 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent element and light-emitting device
US7029765B2 (en) * 2003-04-22 2006-04-18 Universal Display Corporation Organic light emitting devices having reduced pixel shrinkage
US20060099448A1 (en) * 2003-04-28 2006-05-11 Zheng-Hong Lu Top light-emitting devices with fullerene layer
WO2004097954A1 (en) * 2003-04-28 2004-11-11 Zheng-Hong Lu Light-emitting devices with fullerene layer
KR100956051B1 (en) 2003-05-09 2010-05-06 후지필름 가부시키가이샤 Organic electroluminescent device and platinum compound
US8379736B2 (en) 2003-05-30 2013-02-19 Intellectual Ventures Holding 73 Llc Ultra-wideband communication system and method
EP2924094B1 (en) 2003-06-02 2017-04-05 UDC Ireland Limited Organic electroluminescent devices and metal complex compounds
US20050014019A1 (en) * 2003-07-18 2005-01-20 Ying Wang Method of selecting a charge transport and/or anti-quenching material
US20050025993A1 (en) * 2003-07-25 2005-02-03 Thompson Mark E. Materials and structures for enhancing the performance of organic light emitting devices
JP2005071986A (en) * 2003-08-04 2005-03-17 Fuji Photo Film Co Ltd Organic electroluminescent element
KR101246247B1 (en) * 2003-08-29 2013-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electroluminescent device and light-emitting device including the same
KR100543003B1 (en) 2003-09-15 2006-01-20 삼성에스디아이 주식회사 Full color organic electroluminescent device and method for manufacturing the same
JP4864304B2 (en) * 2003-09-19 2012-02-01 富士フイルム株式会社 Organic electroluminescence device
KR101032590B1 (en) * 2003-09-19 2011-05-06 후지필름 가부시키가이샤 Organic electroluminescent device
EP1665897B1 (en) * 2003-09-24 2011-11-23 FUJIFILM Corporation Electroluminescent device
US6881502B2 (en) * 2003-09-24 2005-04-19 Eastman Kodak Company Blue organic electroluminescent devices having a non-hole-blocking layer
US20050104510A1 (en) * 2003-11-14 2005-05-19 General Electric Company Organic light emitting device capable of white light emissions and method for making the same
KR20050050487A (en) * 2003-11-25 2005-05-31 삼성에스디아이 주식회사 Full color organic electroluminescent device
KR100659530B1 (en) * 2003-11-26 2006-12-19 삼성에스디아이 주식회사 Full color orgraic electroluminescence display device
US20050123794A1 (en) * 2003-12-05 2005-06-09 Deaton Joseph C. Organic electroluminescent devices
US7070867B2 (en) * 2003-12-05 2006-07-04 The University Of Southern California OLEDs having n-type doping
US20050137459A1 (en) * 2003-12-17 2005-06-23 Scimed Life Systems, Inc. Medical device with OLED illumination light source
JP4408367B2 (en) * 2003-12-22 2010-02-03 富士フイルム株式会社 Organic electroluminescence device
JP4521182B2 (en) * 2003-12-26 2010-08-11 富士フイルム株式会社 Organic electroluminescence device
TWI230026B (en) * 2003-12-31 2005-03-21 Ritdisplay Corp Organic electroluminescent material and organic electroluminescent device by using the same
US20050158582A1 (en) * 2004-01-15 2005-07-21 Fuji Photo Film Co., Ltd. Organic electroluminescent element
JP2005228733A (en) * 2004-01-16 2005-08-25 Fuji Photo Film Co Ltd Light-emitting element
US20050164031A1 (en) * 2004-01-26 2005-07-28 Thompson Mark E. Dual emitting dyads of heavy metal complexes as broad band emitters for organic LEDs
US7151339B2 (en) * 2004-01-30 2006-12-19 Universal Display Corporation OLED efficiency by utilization of different doping concentrations within the device emissive layer
KR100657892B1 (en) * 2004-02-11 2006-12-14 삼성에스디아이 주식회사 Organic electroluminescence device
TW200541401A (en) 2004-02-13 2005-12-16 Idemitsu Kosan Co Organic electroluminescent device
US7045952B2 (en) * 2004-03-04 2006-05-16 Universal Display Corporation OLEDs with mixed host emissive layer
US7889774B2 (en) * 2004-03-05 2011-02-15 The Trustees Of Princeton University Organic polariton laser
US20050195873A1 (en) * 2004-03-05 2005-09-08 Forrest Stephen R. Organic polariton laser
JP2005267982A (en) * 2004-03-17 2005-09-29 Fuji Photo Film Co Ltd Organic electroluminescent element
CN1934906A (en) * 2004-03-19 2007-03-21 出光兴产株式会社 organic electroluminescent element
US20050214575A1 (en) * 2004-03-26 2005-09-29 Fuji Photo Film Co., Ltd. Organic electroluminescence element
JP2005310766A (en) * 2004-03-26 2005-11-04 Fuji Photo Film Co Ltd Organic electroluminescent element
US7361415B2 (en) * 2004-04-16 2008-04-22 The University Of Hong Kong System and method for producing light with organic light-emitting devices
JP4429067B2 (en) * 2004-04-21 2010-03-10 富士フイルム株式会社 Organic electroluminescence device
US20050244672A1 (en) * 2004-04-30 2005-11-03 Chi-Ming Che Organic light-emitting devices
US7445855B2 (en) * 2004-05-18 2008-11-04 The University Of Southern California Cationic metal-carbene complexes
US7491823B2 (en) * 2004-05-18 2009-02-17 The University Of Southern California Luminescent compounds with carbene ligands
US7279704B2 (en) 2004-05-18 2007-10-09 The University Of Southern California Complexes with tridentate ligands
US7601436B2 (en) * 2004-05-18 2009-10-13 The University Of Southern California Carbene metal complexes as OLED materials
US7393599B2 (en) 2004-05-18 2008-07-01 The University Of Southern California Luminescent compounds with carbene ligands
US7655323B2 (en) * 2004-05-18 2010-02-02 The University Of Southern California OLEDs utilizing macrocyclic ligand systems
US7598388B2 (en) 2004-05-18 2009-10-06 The University Of Southern California Carbene containing metal complexes as OLEDs
US7154114B2 (en) * 2004-05-18 2006-12-26 Universal Display Corporation Cyclometallated iridium carbene complexes for use as hosts
US7582365B2 (en) * 2005-01-10 2009-09-01 Universal Display Corporation Reversibly reducible metal complexes as electron transporting materials for OLEDs
US7534505B2 (en) * 2004-05-18 2009-05-19 The University Of Southern California Organometallic compounds for use in electroluminescent devices
KR100581539B1 (en) * 2004-06-07 2006-05-22 (주)그라쎌 Red electroluminescent compounds and organic electroluminescent device using the same
US20060008670A1 (en) * 2004-07-06 2006-01-12 Chun Lin Organic light emitting materials and devices
US7709100B2 (en) 2004-07-07 2010-05-04 Universal Display Corporation Electroluminescent efficiency
US20060008671A1 (en) * 2004-07-07 2006-01-12 Raymond Kwong Electroluminescent efficiency
EP1763902B1 (en) 2004-07-07 2018-08-29 Universal Display Corporation Stable and efficient electroluminescent materials
US7316756B2 (en) 2004-07-27 2008-01-08 Eastman Kodak Company Desiccant for top-emitting OLED
US7540978B2 (en) 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
WO2006015567A1 (en) 2004-08-13 2006-02-16 Novaled Ag Layer arrangement for a light-emitting component
US20060042685A1 (en) * 2004-08-25 2006-03-02 Ying Wang Electronic devices having a charge transport layer that has defined triplet energy level
JP4214482B2 (en) * 2004-08-26 2009-01-28 独立行政法人科学技術振興機構 Organic electroluminescence device
US9040170B2 (en) * 2004-09-20 2015-05-26 Global Oled Technology Llc Electroluminescent device with quinazoline complex emitter
JP4500735B2 (en) 2004-09-22 2010-07-14 富士フイルム株式会社 Organic electroluminescence device
JP4531509B2 (en) 2004-09-27 2010-08-25 富士フイルム株式会社 Light emitting element
JP4110160B2 (en) * 2004-09-29 2008-07-02 キヤノン株式会社 Organic electroluminescent device and display device
DE602004006275T2 (en) 2004-10-07 2007-12-20 Novaled Ag Method for doping a semiconductor material with cesium
US20060088728A1 (en) * 2004-10-22 2006-04-27 Raymond Kwong Arylcarbazoles as hosts in PHOLEDs
JP2006140182A (en) * 2004-11-10 2006-06-01 Fuji Photo Film Co Ltd Organic electroluminescent element
DE102004054893A1 (en) * 2004-11-12 2006-05-24 Micronas Gmbh Method and circuit arrangement for channel filtering analog or digitally modulated TV signals
KR100669757B1 (en) * 2004-11-12 2007-01-16 삼성에스디아이 주식회사 Organic electroluminescent device
US7776456B2 (en) * 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
US20060125379A1 (en) * 2004-12-09 2006-06-15 Au Optronics Corporation Phosphorescent organic optoelectronic structure
JP4496948B2 (en) * 2004-12-13 2010-07-07 株式会社豊田自動織機 Organic EL device
US20090123720A1 (en) * 2005-03-01 2009-05-14 Zhikuan Chen Solution processed organometallic complexes and their use in electroluminescent devices
US7771845B2 (en) * 2005-03-14 2010-08-10 Fujifilm Corporation Organic electroluminescent device
DE502005002342D1 (en) * 2005-03-15 2008-02-07 Novaled Ag Light-emitting component
US7683536B2 (en) * 2005-03-31 2010-03-23 The Trustees Of Princeton University OLEDs utilizing direct injection to the triplet state
US20060251921A1 (en) * 2005-05-06 2006-11-09 Stephen Forrest OLEDs utilizing direct injection to the triplet state
US20060222886A1 (en) * 2005-04-04 2006-10-05 Raymond Kwong Arylpyrene compounds
US9070884B2 (en) 2005-04-13 2015-06-30 Universal Display Corporation Hybrid OLED having phosphorescent and fluorescent emitters
DE502005002218D1 (en) 2005-04-13 2008-01-24 Novaled Ag Arrangement of a pin-type organic light emitting diode and method of manufacturing
US8057916B2 (en) * 2005-04-20 2011-11-15 Global Oled Technology, Llc. OLED device with improved performance
US20060240281A1 (en) * 2005-04-21 2006-10-26 Eastman Kodak Company Contaminant-scavenging layer on OLED anodes
US7807275B2 (en) 2005-04-21 2010-10-05 Universal Display Corporation Non-blocked phosphorescent OLEDs
US7902374B2 (en) * 2005-05-06 2011-03-08 Universal Display Corporation Stability OLED materials and devices
US9051344B2 (en) 2005-05-06 2015-06-09 Universal Display Corporation Stability OLED materials and devices
US7851072B2 (en) * 2005-05-19 2010-12-14 Universal Display Corporation Stable and efficient electroluminescent materials
US7511418B2 (en) * 2005-05-20 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and manufacturing method of light emitting element
JP5046553B2 (en) * 2005-05-20 2012-10-10 株式会社半導体エネルギー研究所 Light emitting element
DE502005009415D1 (en) * 2005-05-27 2010-05-27 Novaled Ag Transparent organic light emitting diode
JP5095612B2 (en) 2005-05-31 2012-12-12 ユニバーサル ディスプレイ コーポレイション Triphenylene host in phosphorescent light-emitting diodes
US7474048B2 (en) * 2005-06-01 2009-01-06 The Trustees Of Princeton University Fluorescent filtered electrophosphorescence
EP1729346A1 (en) * 2005-06-01 2006-12-06 Novaled AG Light-emitting device with an electrode arrangement
EP1739765A1 (en) * 2005-07-01 2007-01-03 Novaled AG Organic light-emitting diode and stack of organic light emitting diodes
JP4959961B2 (en) * 2005-07-29 2012-06-27 株式会社ジャパンディスプレイセントラル Manufacturing method of organic EL element
WO2007029426A1 (en) 2005-09-05 2007-03-15 Idemitsu Kosan Co., Ltd. Blue light emitting organic electroluminescence element
US8148891B2 (en) * 2005-10-04 2012-04-03 Universal Display Corporation Electron impeding layer for high efficiency phosphorescent OLEDs
US8956738B2 (en) * 2005-10-26 2015-02-17 Global Oled Technology Llc Organic element for low voltage electroluminescent devices
US20070103066A1 (en) * 2005-11-04 2007-05-10 D Andrade Brian W Stacked OLEDs with a reflective conductive layer
US8021763B2 (en) * 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
US20070122657A1 (en) * 2005-11-30 2007-05-31 Eastman Kodak Company Electroluminescent device containing a phenanthroline derivative
US9666826B2 (en) * 2005-11-30 2017-05-30 Global Oled Technology Llc Electroluminescent device including an anthracene derivative
DE502005004675D1 (en) * 2005-12-21 2008-08-21 Novaled Ag Organic component
US7977862B2 (en) * 2005-12-21 2011-07-12 Lg Display Co., Ltd. Organic light emitting devices
EP1804308B1 (en) * 2005-12-23 2012-04-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
EP1804309B1 (en) * 2005-12-23 2008-07-23 Novaled AG Electronic device with a layer structure of organic layers
US7645525B2 (en) * 2005-12-27 2010-01-12 Lg Display Co., Ltd. Organic light emitting devices
EP1808909A1 (en) * 2006-01-11 2007-07-18 Novaled AG Electroluminescent light-emitting device
JP2009524189A (en) * 2006-01-18 2009-06-25 エルジー・ケム・リミテッド Multilayer organic light emitting device
EP2987450B1 (en) 2006-02-07 2019-06-05 Boston Scientific Limited Medical device light source
US8142909B2 (en) * 2006-02-10 2012-03-27 Universal Display Corporation Blue phosphorescent imidazophenanthridine materials
ATE553111T1 (en) 2006-02-10 2012-04-15 Universal Display Corp METAL COMPLEXES OF IMIDAZOÄ1,2-FÜPHENANTHRIDINE LIGANDS AND THEIR USE IN OLED DEVICES
US20070207345A1 (en) * 2006-03-01 2007-09-06 Eastman Kodak Company Electroluminescent device including gallium complexes
US7790298B2 (en) 2006-04-13 2010-09-07 The University Of Southern California Organic electronic devices using phthalimide compounds
EP1848049B1 (en) * 2006-04-19 2009-12-09 Novaled AG Light emitting device
US8008856B2 (en) * 2006-04-19 2011-08-30 Massachusetts Institute Of Technology Light emitting devices with agent to increase the fraction of excitons formed as a singlet
US20070247061A1 (en) * 2006-04-20 2007-10-25 Vadim Adamovich Multiple dopant emissive layer OLEDs
US8330351B2 (en) * 2006-04-20 2012-12-11 Universal Display Corporation Multiple dopant emissive layer OLEDs
EP2355198B1 (en) 2006-05-08 2015-09-09 Global OLED Technology LLC OLED electron-injecting layer
US7579773B2 (en) * 2006-06-05 2009-08-25 The Trustees Of Princeton University Organic light-emitting device with a phosphor-sensitized fluorescent emission layer
KR101282400B1 (en) * 2006-08-24 2013-07-04 한국과학기술원 Organic light emitting diode display
US7724796B2 (en) * 2006-08-29 2010-05-25 The Trustees Of Princeton University Organic laser
US7598381B2 (en) * 2006-09-11 2009-10-06 The Trustees Of Princeton University Near-infrared emitting organic compounds and organic devices using the same
US7800295B2 (en) * 2006-09-15 2010-09-21 Universal Display Corporation Organic light emitting device having a microcavity
DE102006046196A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Illumination device particularly for background lighting of two displays, has two light output side, and organic layer stacks, which is arranged between two light output side
GB2442724B (en) * 2006-10-10 2009-10-21 Cdt Oxford Ltd Light emissive device
US8945722B2 (en) * 2006-10-27 2015-02-03 The University Of Southern California Materials and architectures for efficient harvesting of singlet and triplet excitons for white light emitting OLEDs
DE102006059509B4 (en) * 2006-12-14 2012-05-03 Novaled Ag Organic light-emitting element
DE102007019260B4 (en) * 2007-04-17 2020-01-16 Novaled Gmbh Non-volatile organic storage element
US7993763B2 (en) * 2007-05-10 2011-08-09 Universal Display Corporation Organometallic compounds having host and dopant functionalities
US20080284318A1 (en) * 2007-05-17 2008-11-20 Deaton Joseph C Hybrid fluorescent/phosphorescent oleds
US20080284317A1 (en) * 2007-05-17 2008-11-20 Liang-Sheng Liao Hybrid oled having improved efficiency
US20080309217A1 (en) * 2007-05-18 2008-12-18 Mulder Carlijn L Organic light emitting devices
JP5127300B2 (en) 2007-05-28 2013-01-23 キヤノン株式会社 Fluorene compound, organic light emitting device using the same, and display device
JP5053713B2 (en) 2007-05-30 2012-10-17 キヤノン株式会社 Phosphorescent material, organic electroluminescent element and image display device using the same
KR100858824B1 (en) * 2007-05-31 2008-09-17 삼성에스디아이 주식회사 An organic light emitting device and a method for preparing the same
US9023490B2 (en) 2007-06-15 2015-05-05 Versitech Limited Extended pi-conjugated platinum (II) complexes
JP5008470B2 (en) 2007-06-18 2012-08-22 キヤノン株式会社 Organic electroluminescence device
EP3424918A1 (en) 2007-08-08 2019-01-09 Universal Display Corporation Single triphenylene chromophores in phosphorescent light emitting diodes
JP2009076865A (en) 2007-08-29 2009-04-09 Fujifilm Corp Organic electroluminescence device
KR101548382B1 (en) 2007-09-14 2015-08-28 유디씨 아일랜드 리미티드 Organic electroluminescence device
WO2009037155A1 (en) * 2007-09-20 2009-03-26 Basf Se Electroluminescent device
JP5438941B2 (en) 2007-09-25 2014-03-12 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
JP5213405B2 (en) * 2007-10-04 2013-06-19 出光興産株式会社 Organic electroluminescence device
US8067100B2 (en) 2007-10-04 2011-11-29 Universal Display Corporation Complexes with tridentate ligands
US8383249B2 (en) * 2007-10-04 2013-02-26 Universal Display Corporation Complexes with tridentate ligands
US20090091242A1 (en) * 2007-10-05 2009-04-09 Liang-Sheng Liao Hole-injecting layer in oleds
CN101170852B (en) * 2007-11-14 2010-05-19 电子科技大学 An organic EL part with ultra-thin layer structure
US7982216B2 (en) 2007-11-15 2011-07-19 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
US8319214B2 (en) 2007-11-15 2012-11-27 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
JP5438955B2 (en) 2007-12-14 2014-03-12 ユー・ディー・シー アイルランド リミテッド Platinum complex compound and organic electroluminescence device using the same
US20090162612A1 (en) * 2007-12-19 2009-06-25 Hatwar Tukaram K Oled device having two electron-transport layers
US20090235974A1 (en) * 2008-01-14 2009-09-24 Massachusetts Institute Of Technology Solar concentrator and devices and methods using them
JP5243972B2 (en) 2008-02-28 2013-07-24 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
EP2253033B1 (en) * 2008-03-19 2019-06-12 The Regents of the University of Michigan Method for detection of infrared radiation using organic thin films
JP4555358B2 (en) 2008-03-24 2010-09-29 富士フイルム株式会社 Thin film field effect transistor and display device
JP4531836B2 (en) 2008-04-22 2010-08-25 富士フイルム株式会社 Organic electroluminescent device, novel platinum complex compound and novel compound that can be a ligand
JP4531842B2 (en) 2008-04-24 2010-08-25 富士フイルム株式会社 Organic electroluminescence device
KR100924145B1 (en) * 2008-06-10 2009-10-28 삼성모바일디스플레이주식회사 Organic light emitting diode and fabrication method of the same
US8324800B2 (en) * 2008-06-12 2012-12-04 Global Oled Technology Llc Phosphorescent OLED device with mixed hosts
DE102008036062B4 (en) 2008-08-04 2015-11-12 Novaled Ag Organic field effect transistor
DE102008036063B4 (en) * 2008-08-04 2017-08-31 Novaled Gmbh Organic field effect transistor
US8247088B2 (en) * 2008-08-28 2012-08-21 Global Oled Technology Llc Emitting complex for electroluminescent devices
JP5325707B2 (en) * 2008-09-01 2013-10-23 株式会社半導体エネルギー研究所 Light emitting element
JP5329342B2 (en) 2008-09-01 2013-10-30 株式会社半導体エネルギー研究所 Light emitting element
EP2161272A1 (en) 2008-09-05 2010-03-10 Basf Se Phenanthrolines
EP2329540B1 (en) 2008-09-25 2017-01-11 Universal Display Corporation Organoselenium materials and their uses in organic light emitting devices
CN104377308B (en) 2008-10-28 2019-08-06 密执安州立大学董事会 With individual red, green and blue subcomponent stack White OLED
JP2010153820A (en) 2008-11-21 2010-07-08 Fujifilm Corp Organic electroluminescent element
JP4775865B2 (en) * 2009-01-14 2011-09-21 東芝モバイルディスプレイ株式会社 Organic EL display device and manufacturing method thereof
US20100139749A1 (en) * 2009-01-22 2010-06-10 Covalent Solar, Inc. Solar concentrators and materials for use therein
JP2010182449A (en) 2009-02-03 2010-08-19 Fujifilm Corp Organic electroluminescent display device
JP2010186723A (en) 2009-02-13 2010-08-26 Fujifilm Corp Organic el device and method of manufacturing the same
JP2010232163A (en) 2009-03-03 2010-10-14 Fujifilm Corp Method of manufacturing light-emitting display device, light-emitting display device, and light-emitting display
JP2010205650A (en) 2009-03-05 2010-09-16 Fujifilm Corp Organic el display device
EP2413663A1 (en) 2009-03-27 2012-02-01 FUJIFILM Corporation Coating solution for organic electroluminescent element
DE102009018647A1 (en) * 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Radiation-emitting device
US20100314994A1 (en) * 2009-06-16 2010-12-16 Chi Ming Che Platinum (II) Isoqulinoline-Pyridine-Benzene Based Complexes, Methods for Making Same, and Organic Light-Emitting Diodes Including Such Complexes
KR101761223B1 (en) 2009-06-18 2017-07-25 유디씨 아일랜드 리미티드 Phenanthroazole compounds as hole transporting materials for electro luminescent devices
EP2461387A4 (en) 2009-07-31 2013-01-23 Udc Ireland Ltd Vapor deposition material for organic device and method for manufacturing organic device
JP5779318B2 (en) 2009-08-31 2015-09-16 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
JP2011060549A (en) 2009-09-09 2011-03-24 Fujifilm Corp Optical member for organic el device, and organic el device
JP5657243B2 (en) 2009-09-14 2015-01-21 ユー・ディー・シー アイルランド リミテッド Color filter and light emitting display element
JP5473506B2 (en) 2009-09-14 2014-04-16 ユー・ディー・シー アイルランド リミテッド Color filter and light emitting display element
JP2011100944A (en) 2009-11-09 2011-05-19 Fujifilm Corp Organic electroluminescent element
JP2011121876A (en) 2009-12-08 2011-06-23 Canon Inc New iridium complex and organic light-emitting device containing the same
KR101849789B1 (en) 2010-01-29 2018-04-17 스미또모 가가꾸 가부시키가이샤 Luminescent composition and light-emitting element using said composition
JP5618753B2 (en) * 2010-04-26 2014-11-05 キヤノン株式会社 Organic light emitting device
JP2013201153A (en) * 2010-06-08 2013-10-03 Idemitsu Kosan Co Ltd Organic electroluminescent element
US8673458B2 (en) 2010-06-11 2014-03-18 Universal Display Corporation Delayed fluorescence OLED
DE102010025547B4 (en) * 2010-06-29 2023-05-11 Samsung Display Co., Ltd. Use of a composition in an emitter layer in an optoelectronic device for singlet harvesting with organic molecules, optoelectronic devices and method for their production
DE112011102558B4 (en) * 2010-07-30 2022-01-05 Merck Patent Gmbh Organic electroluminescent device
US20120049168A1 (en) 2010-08-31 2012-03-01 Universal Display Corporation Cross-Linked Charge Transport Layer Containing an Additive Compound
EP2621730B1 (en) 2010-09-29 2019-09-18 Basf Se Security element
KR102001685B1 (en) 2010-10-07 2019-07-18 유디씨 아일랜드 리미티드 Phenanthro[9,10-b]furans for electornic applications
US9079872B2 (en) 2010-10-07 2015-07-14 Basf Se Phenanthro[9, 10-B]furans for electronic applications
GB2485001A (en) * 2010-10-19 2012-05-02 Cambridge Display Tech Ltd OLEDs
JP5677035B2 (en) 2010-11-04 2015-02-25 キヤノン株式会社 Xanthone compound and organic light emitting device having the same
US9029541B2 (en) 2010-12-02 2015-05-12 Ube Industries, Ltd. Binuclear metal complex, and organic electroluminescence element comprising same
US8940411B2 (en) 2011-04-25 2015-01-27 General Electric Company Materials for optoelectronic devices
US9105860B2 (en) 2011-06-30 2015-08-11 Samsung Display Co., Ltd. Organic light emitting diode
US9023420B2 (en) 2011-07-14 2015-05-05 Universal Display Corporation Composite organic/inorganic layer for organic light-emitting devices
JP2013093541A (en) 2011-10-06 2013-05-16 Udc Ireland Ltd Organic electroluminescent element and compound and material for organic electroluminescent element usable therefor, and luminescent device, display device and lighting device using the element
JP2013084732A (en) 2011-10-07 2013-05-09 Udc Ireland Ltd Organic field light-emitting element and light-emitting material for the same, and light-emitting device, display device and illuminating device
JP2013118349A (en) 2011-11-02 2013-06-13 Udc Ireland Ltd Organic electroluminescent element, material for organic electroluminescent element, and light emitting device, display device and illumination device which employ said organic electroluminescent element
JP5913938B2 (en) 2011-11-30 2016-05-11 富士フイルム株式会社 Light diffusing transfer material, method of forming light diffusing layer, and method of manufacturing organic electroluminescent device
DE102011089687A1 (en) 2011-12-22 2013-06-27 Hartmut Yersin Singlet Harvesting with special organic molecules without metal centers for opto-electronic devices
JP5981770B2 (en) 2012-01-23 2016-08-31 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device, charge transport material for organic electroluminescence device, and light emitting device, display device and illumination device using the device
JP6118034B2 (en) 2012-02-06 2017-04-19 ユー・ディー・シー アイルランド リミテッド ORGANIC ELECTROLUMINESCENT ELEMENT, COMPOUND USABLE FOR THE SAME, ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, AND LIGHT EMITTING DEVICE, DISPLAY DEVICE AND LIGHTING DEVICE USING THE ELEMENT
US20130240850A1 (en) * 2012-03-13 2013-09-19 The Regents Of The University Of Michigan Ultra-high efficiency (125%) phosphorescent organic light emitting diodes using singlet fission
US10957870B2 (en) * 2012-09-07 2021-03-23 Universal Display Corporation Organic light emitting device
US9859517B2 (en) 2012-09-07 2018-01-02 Nitto Denko Corporation White organic light-emitting diode
KR101965910B1 (en) * 2012-10-30 2019-04-05 삼성디스플레이 주식회사 Organic light emitting device
US9653691B2 (en) * 2012-12-12 2017-05-16 Universal Display Corporation Phosphorescence-sensitizing fluorescence material system
EP2980876B1 (en) * 2013-03-29 2019-05-08 Konica Minolta, Inc. Organic electroluminescent element, lighting device and display device
KR101293690B1 (en) 2013-06-14 2013-08-06 한국해양과학기술원 Optical sensor for measuring water quality using rgb sensor
WO2015022974A1 (en) 2013-08-14 2015-02-19 国立大学法人九州大学 Organic electroluminescent element
KR102403208B1 (en) 2013-08-26 2022-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, light-emitting device, display device, lighting device, and electronic appliance
CN105723536A (en) * 2013-08-29 2016-06-29 密执安州立大学董事会 Organic electronic devices with multiple solution-processed layers
US9385348B2 (en) 2013-08-29 2016-07-05 The Regents Of The University Of Michigan Organic electronic devices with multiple solution-processed layers
US9666822B2 (en) 2013-12-17 2017-05-30 The Regents Of The University Of Michigan Extended OLED operational lifetime through phosphorescent dopant profile management
JP6462698B2 (en) 2013-12-20 2019-01-30 ユー・ディー・シー アイルランド リミテッド High efficiency OLED device with very short decay time
WO2015134017A1 (en) 2014-03-05 2015-09-11 Universal Display Corporation Phosphorescent oled devices
EP3140871B1 (en) 2014-05-08 2018-12-26 Universal Display Corporation Stabilized imidazophenanthridine materials
US11329244B2 (en) * 2014-08-22 2022-05-10 Arizona Board Of Regents On Behalf Of Arizona State University Organic light-emitting diodes with fluorescent and phosphorescent emitters
KR102353647B1 (en) 2014-08-29 2022-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, display device, electronic device, and lighting device
CN104393181B (en) * 2014-10-30 2017-02-01 中国科学院长春应用化学研究所 Red organic electroluminescent device and preparation method thereof
FR3032970B1 (en) 2015-02-23 2017-03-31 Centre Nat Rech Scient MOLECULAR EMISSIVE MATERIALS PHOTOPOLYMERIZABLE
KR102584846B1 (en) 2015-05-05 2023-10-04 유니버셜 디스플레이 코포레이션 Organic electroluminescent materials and devices
CN107735880B (en) * 2015-06-03 2020-07-10 Udc 爱尔兰有限责任公司 Efficient O L ED device with extremely short decay time
US10818853B2 (en) 2015-06-04 2020-10-27 University Of Southern California Organic electroluminescent materials and devices
JP6808329B2 (en) * 2016-02-25 2021-01-06 株式会社ジャパンディスプレイ Materials for organic electroluminescence display devices and organic electroluminescence display devices
US10665803B2 (en) * 2016-04-22 2020-05-26 The Trusteees Of Princeton University Solid-state organic intermediate-band photovoltaic devices
US11302882B2 (en) 2016-11-25 2022-04-12 Merck Patent Gmbh Luminescent film, organic electroluminescent element, organic material composition and method for producing organic electroluminescent element
KR102250191B1 (en) 2017-03-06 2021-05-10 삼성전자주식회사 Light emitting device
WO2018186101A1 (en) * 2017-04-07 2018-10-11 コニカミノルタ株式会社 Organic electroluminescence element and method for manufacturing organic electroluminescence element
US11283238B2 (en) 2017-11-14 2022-03-22 The Penn State Research Foundation Charged polaron-polaritons in an organic semiconductor microcavity
EP3492480B1 (en) 2017-11-29 2021-10-20 Universal Display Corporation Organic electroluminescent materials and devices
WO2019142555A1 (en) 2018-01-17 2019-07-25 コニカミノルタ株式会社 Luminescent film, organic electroluminescent device, and method for manufacturing organic electroluminescent device
US11780829B2 (en) * 2019-01-30 2023-10-10 The University Of Southern California Organic electroluminescent materials and devices
US11812624B2 (en) 2019-01-30 2023-11-07 The University Of Southern California Organic electroluminescent materials and devices
US20200295291A1 (en) * 2019-03-12 2020-09-17 Universal Display Corporation OLED WITH TRIPLET EMITTER AND EXCITED STATE LIFETIME LESS THAN 200 ns
CN113646315A (en) 2019-04-11 2021-11-12 默克专利有限公司 Material for organic electroluminescent device
KR20200143566A (en) 2019-06-13 2020-12-24 삼성디스플레이 주식회사 Organic light emitting device
US20210040129A1 (en) * 2019-08-08 2021-02-11 Universal Display Corporation Organic electroluminescent materials and devices
CN112341498A (en) * 2019-08-08 2021-02-09 环球展览公司 Organic electroluminescent material and device
CN110518137B (en) * 2019-08-30 2022-04-08 合肥鑫晟光电科技有限公司 Organic electroluminescent device, array substrate and display panel
EP4055642A1 (en) 2019-11-04 2022-09-14 Merck Patent GmbH Materials for organic electroluminescent devices
TW202134252A (en) 2019-11-12 2021-09-16 德商麥克專利有限公司 Materials for organic electroluminescent devices
US20220348596A1 (en) * 2020-02-28 2022-11-03 Universal Display Corporation Organic electroluminescent materials and devices
CN115244060A (en) 2020-03-23 2022-10-25 默克专利有限公司 Material for organic electroluminescent device
EP4263544A1 (en) 2020-12-18 2023-10-25 Merck Patent GmbH Indolo[3.2.1-jk]carbazole-6-carbonitrile derivatives as blue fluorescent emitters for use in oleds
CN116724040A (en) 2020-12-18 2023-09-08 默克专利有限公司 Nitrogen-containing compounds for organic electroluminescent devices
CN116649013A (en) 2020-12-18 2023-08-25 默克专利有限公司 Nitrogen-containing heteroaromatic compounds for organic electroluminescent devices
CN117425655A (en) 2021-04-30 2024-01-19 默克专利有限公司 Nitrogen-containing heterocyclic compound for organic electroluminescent device
WO2023041454A1 (en) 2021-09-14 2023-03-23 Merck Patent Gmbh Boronic heterocyclic compounds for organic electroluminescent devices
WO2023072799A1 (en) 2021-10-27 2023-05-04 Merck Patent Gmbh Boronic and nitrogenous heterocyclic compounds for organic electroluminescent devices
WO2023161167A1 (en) 2022-02-23 2023-08-31 Merck Patent Gmbh Nitrogenous heterocycles for organic electroluminescent devices
WO2023161168A1 (en) 2022-02-23 2023-08-31 Merck Patent Gmbh Aromatic hetreocycles for organic electroluminescent devices

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69027697T2 (en) * 1989-03-31 1997-01-23 Toshiba Kawasaki Kk Organic electroluminescent device
DE4428450A1 (en) * 1994-08-11 1996-02-15 Philips Patentverwaltung Optical electroluminescent component used as LED's
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
EP0812526B1 (en) * 1995-12-30 2001-08-08 Casio Computer Co., Ltd. Display device for performing display operation in accordance with signal light and driving method therefor
US5811834A (en) * 1996-01-29 1998-09-22 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organo-electroluminescence device and organo-electroluminescence device for which the light-emitting material is adapted
WO1997048115A1 (en) 1996-06-12 1997-12-18 The Trustees Of Princeton University Plasma treatment of conductive layers
JP2000512428A (en) 1996-06-12 2000-09-19 ザ トラスティーズ オブ プリンストン ユニバーシテイ Thin film patterning for organic multicolor display manufacturing
DE19625993A1 (en) * 1996-06-28 1998-01-02 Philips Patentverwaltung Organic electroluminescent device with charge transport layer
US6048630A (en) 1996-07-02 2000-04-11 The Trustees Of Princeton University Red-emitting organic light emitting devices (OLED's)
US5844363A (en) 1997-01-23 1998-12-01 The Trustees Of Princeton Univ. Vacuum deposited, non-polymeric flexible organic light emitting devices
US6091195A (en) 1997-02-03 2000-07-18 The Trustees Of Princeton University Displays having mesa pixel configuration
US5811833A (en) 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals
US6013982A (en) 1996-12-23 2000-01-11 The Trustees Of Princeton University Multicolor display devices
US6045930A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University Materials for multicolor light emitting diodes
US5986401A (en) 1997-03-20 1999-11-16 The Trustee Of Princeton University High contrast transparent organic light emitting device display
US6125226A (en) 1997-04-18 2000-09-26 The Trustees Of Princeton University Light emitting devices having high brightness
US5834893A (en) 1996-12-23 1998-11-10 The Trustees Of Princeton University High efficiency organic light emitting devices with light directing structures
US6046543A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University High reliability, high efficiency, integratable organic light emitting devices and methods of producing same
US5861219A (en) 1997-04-15 1999-01-19 The Trustees Of Princeton University Organic light emitting devices containing a metal complex of 5-hydroxy-quinoxaline as a host material
US5757139A (en) 1997-02-03 1998-05-26 The Trustees Of Princeton University Driving circuit for stacked organic light emitting devices
US5917280A (en) 1997-02-03 1999-06-29 The Trustees Of Princeton University Stacked organic light emitting devices
JPH10231476A (en) * 1997-02-19 1998-09-02 Oki Electric Ind Co Ltd Organic el element
US6160828A (en) 1997-07-18 2000-12-12 The Trustees Of Princeton University Organic vertical-cavity surface-emitting laser
US6111902A (en) 1997-05-09 2000-08-29 The Trustees Of Princeton University Organic semiconductor laser
US5932895A (en) 1997-05-20 1999-08-03 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
US6013429A (en) * 1998-02-27 2000-01-11 Eastman Kodak Company Photographic element with new singlet oxygen quenchers
JPH11256418A (en) * 1998-03-12 1999-09-21 Free Ride:Kk Shock-absorbing liner of helmet and helmet
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100364139C (en) * 2003-11-17 2008-01-23 中国科学院长春应用化学研究所 Method for preparing glow rare earth organic complex electroluminescent device
US7474049B2 (en) 2005-03-23 2009-01-06 Au Optronics Corp. Organic electroluminescent device
CN107112419A (en) * 2014-11-05 2017-08-29 学校法人冲绳科学技术大学院大学学园 Doping engineering hole transmission layer for the device based on perovskite
CN107112419B (en) * 2014-11-05 2019-07-05 学校法人冲绳科学技术大学院大学学园 The method of opto-electronic device and manufacture opto-electronic device
US11690238B2 (en) 2017-10-27 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
CN112913040A (en) * 2018-11-05 2021-06-04 三星显示有限公司 Organic light emitting device

Also Published As

Publication number Publication date
EP1204994A1 (en) 2002-05-15
KR100858274B1 (en) 2008-09-11
AU6113800A (en) 2001-02-13
US6894307B2 (en) 2005-05-17
KR20020059337A (en) 2002-07-12
JP4571359B2 (en) 2010-10-27
US20020008233A1 (en) 2002-01-24
US20030178619A1 (en) 2003-09-25
JP2003520391A (en) 2003-07-02
EP1204994B1 (en) 2011-08-31
CN1221040C (en) 2005-09-28
WO2001008230A1 (en) 2001-02-01
US6515298B2 (en) 2003-02-04
EP1204994A4 (en) 2006-11-15
ATE522939T1 (en) 2011-09-15
US6310360B1 (en) 2001-10-30

Similar Documents

Publication Publication Date Title
CN1221040C (en) Intersystem crossing agents for efficient utilization of excitons in organic light emitting device
US6458475B1 (en) Organic light emitting diode having a blue phosphorescent molecule as an emitter
US7674531B2 (en) Phosphorescent organic light emitting devices
US7563519B2 (en) OLEDs doped with phosphorescent compounds
CN101584057B (en) Materials and architectures for efficient harvesting of singlet and triplet excitons for white light emitting OLEDs
US6451455B1 (en) Metal complexes bearing both electron transporting and hole transporting moieties
KR101302279B1 (en) Organic electroluminescence device
CN101312235B (en) Very high efficiency organic light emitting devices based on electrophosphorescence
US20020180347A1 (en) Double doped-layer, phosphorescent organic light emitting devices
CN1795569A (en) Organic light emitting devices utilizing binuclear metal-compounds as emissive material
CN102881842A (en) Composite organic/inorganic layer for organic light-emitting devices
CN1531581A (en) Organic electroluminescent device
KR20060017086A (en) Organic electro-luminescence device and method for fabricating the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20050928

CX01 Expiry of patent term