CN1402394A - Manufacture of high-power semiconductor laser stacked array - Google Patents
Manufacture of high-power semiconductor laser stacked array Download PDFInfo
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- CN1402394A CN1402394A CN 02133088 CN02133088A CN1402394A CN 1402394 A CN1402394 A CN 1402394A CN 02133088 CN02133088 CN 02133088 CN 02133088 A CN02133088 A CN 02133088A CN 1402394 A CN1402394 A CN 1402394A
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- sheet metal
- fixing hole
- cooling fluid
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Abstract
The micro channel cooling heat sink composed of the metal pieces with five layer structures is designed in the invention so as to realize the thermal contact and water seal. The invented heat sink cools each laser diode array bar. Since the direction of the channel is perpendicular to the sidewise of the array, thus, the cooling effect is even. The thickness of the cooling heat sink is quite thin, thus, the interval of the lamination of the laser diode also quite thin so as to increase the optical power density output from the laser. Comparing with the prior art, the invention provides the features of good thermal contact, even cooling and keeping consistency between lasers.
Description
Technical field: the invention belongs to field of semiconductor photoelectron technique, relate to the preparation of a kind of novel seal dress high-effective multilayer structure micro-channel heat sink cooling high power semiconductor laser alternating array.
Background technology: high-power semiconductor laser repeatedly battle array becomes the focus that competitively chase various countries with its wide application prospect and enormous and latent market.At present high-power semiconductor laser repeatedly the subject matter that faced of battle array be the low performance of laser, i.e. problems such as the power of laser, efficient, reliability and stability, consistency difference, this has limited its practical application to a great extent.The performance of laser is except that relevant with epitaxial material, also relevant with the heat dissipation of laser, because factors such as conversion efficiency, luminescent device integrated causes hot enrichment, hot enrichment will cause laser active area junction temperature to raise, thereby reduce the photoelectric conversion efficiency of laser, and the centre wavelength generation temperature of laser is floated, in addition, the laser junction temperature is too high will introduce defective at active area.Therefore high-power semiconductor laser repeatedly the stability and the reliability of battle array device performance with junction temperature direct relation is arranged, generally, high-power semiconductor laser is when repeatedly the working junction temperature of battle array is lower than 25 ℃, laser can obtain the photoelectric conversion efficiency of maximum; When working junction temperature is lower than 50 ℃, the work that laser can be stable; And when working junction temperature was higher than 50 ℃, the performance of laser will degenerate very soon even lose efficacy.Therefore to obtain high stability high reliability high-power semiconductor laser repeatedly battle array just must design and produce the heat sink of high heat conductance.Passively heat sinkly only be useful for low-power laser because of its thermal capacitance quantitative limitation; Active large passage, its thermal resistance of small channel heat sink are also higher relatively, are useful for the mid power laser.And existing microchannel cooling heat sink is primarily aimed at the integrated design of microelectronics, it adopts the superimposed envelope of the uniform foil of polylith thickness to enclose and forms, thermo-contact is poor between sheet metal, the hydraulic pressure that can bear is low, heat-conducting effect is bad, when this in addition microchannel cooling heat sink changes battle array at the preparation high-power semiconductor laser, because it can not directly cool off single laser array bar, therefore the temperature of heat sink surface can raise gradually along with the direction of coolant flow, make the laser inequality of being heated, influence the consistency of laser, this application for laser is totally unfavorable.
Detailed content of the present invention: the objective of the invention is to solve microchannel cooling heat sink in the background technology and adopt the superimposed envelope of the uniform foil of polylith thickness to enclose to form, thermo-contact is poor between sheet metal, the hydraulic pressure that can bear is low, problems such as heat-conducting effect is bad, in order to achieve the above object the present invention will for high-power semiconductor laser repeatedly battle array provide stable and reliable for performance, be easy to heat radiation, low thermal resistance sealing dress, high-effective multilayer structure micro-channel heat sink cooling high power semiconductor laser alternating array and preparation method.
To achieve these goals, the technical scheme taked of the present invention is:
(1) as Fig. 1, on sheet metal 1, prepare microchannel, cooling passage, cooling fluid manhole appendix and fixing hole, with sheet metal 1 surface finish, and sheet metal 1 cleaned up;
(2) prepare cooling fluid manhole appendix and fixing hole as Fig. 2 on sheet metal 5, the position of its manhole appendix and fixing hole, size and dimension are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 5; Prepare water-guiding hole on sheet metal 5, the center of each water-guiding hole is corresponding with the center, microchannel on the sheet metal 5, with sheet metal 5 surface finish, and sheet metal 5 is cleaned up;
(3) on sheet metal 6, prepare cooling fluid manhole appendix and fixing hole as Fig. 3, its position of cooling fluid manhole appendix and fixing hole, size and shape are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 6, with sheet metal 6 surface finish, and sheet metal 6 cleaned up;
(4) successively sheet metal 1 is placed on the sheet metal 6 as Fig. 4, again sheet metal 5 is placed on the sheet metal 1, then another sheet metal 1 ° is placed on the sheet metal 5 along its axis ef Rotate 180, put another sheet metal 6 at last again, upward the cooling fluid manhole appendix is corresponding with fixing hole for each layer when stacking, stack back diffusion bonding in certain pressure, temperature and time scope, make the five-layer structure micro-channel heat sink;
(5) with the micro-channel heat sink surface finish and clean up, plate titanium, platinum, gold thin film and metallization respectively in tow sides and a side then near one side place, microchannel, again its front or reverse side are plated indium, make and electrically contact;
(6) on the insulation elastomeric material, prepare cooling fluid manhole appendix and fixing hole as Fig. 5, the position of cooling fluid manhole appendix and fixing hole, size and shape are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 1, the insulation elastomeric material is slightly thicker than the laser array bar, cleans up after preparing;
(7) prepare cooling fluid manhole appendix and fixing hole as Fig. 7 on the insulation elastomeric material, position, size and the shape of cooling fluid manhole appendix and fixing hole is corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 1, cleans up after preparing;
(8) on clamping plate, prepare water-guiding hole, fixing hole and cooling passage as Fig. 6, the position of water-guiding hole and fixing hole, size shape are corresponding respectively with cooling fluid manhole appendix and fixing hole on the sheet metal 1, and cooling passage is communicated with water-guiding hole and cleans up after preparing;
(9) earlier laser array bar back-off is welded in the zone that is coated with the scolder indium on the micro-channel heat sink as Fig. 8, the elastomeric material that will insulate again is placed on the relevant position of micro-channel heat sink and fixes, form a diode laser matrix unit, a plurality of such unit are come into line and the first insulation elastomeric material that adds respectively at its two ends in the same way, add clamping plate, tighten fixing by fixing hole with fixed lever at last, realize good water-stop and electrically contact, the positive and negative electrode of burn-oning at last forms repeatedly battle array of a complete sealing dress high-effective multilayer structure micro-channel heat sink cooling laser diode.
Dynamic duty process of the present invention: the designed high-power laser diode of the present invention needs water flowing simultaneously, energising when repeatedly battle array is worked.When voltage is added in laser diode repeatedly during battle array by positive and negative electrode, because the insulating effect of insulation elastomeric material, the electric current diode laser matrix bar shaped of can only flowing through becomes the closed path of series connection, when electric current surpasses the threshold current of diode laser matrix bar, array bar swashs penetrates output laser, produces heat simultaneously.In order to reduce the temperature rise that hot enrichment caused that produces because of laser works, improve the reliability and stability of laser, need the laser under the operating state be dispelled the heat.In water flowing when cooling,, water enters a side microchannel of micro-channel heat sink by cooling passage through the cooling fluid manhole appendix, by water-guiding hole cooling water is swung to the opposite side microchannel of micro-channel heat sink and is flowed out laser from cooling passage at last through the cooling fluid manhole appendix again.Because being in parallel in designed multilayer microchannel cooling heat sink, cooling water flows to, so it can directly freeze to each diode laser array bar, at cooling water flow during through micro-channel heat sink, utilize the high thermal conductance of heat sink material, the heat that the diode laser array bar is produced very F.F. is gone in the blade of microchannel, take away by the flowed through cooling water of microchannel of the mode of hot forced convection again, thereby make micro-channel heat sink be operated in inferior thermal capacity saturation condition, improve stability, reliability and the consistency of laser.
The present invention has designed repeatedly battle array of a kind of brand-new sealing dress high-effective multilayer structure micro-channel heat sink cooling high power laser diode.Existing microchannel cooling heat sink is primarily aimed at the integrated design of microelectronics, it adopts the superimposed envelope of the uniform foil of polylith thickness to enclose and forms, thermo-contact is poor between sheet metal, the hydraulic pressure that can bear is low, heat-conducting effect is bad, when this in addition microchannel cooling heat sink changes battle array at the preparation high-power semiconductor laser, because it can not directly cool off single laser array bar, therefore the temperature of heat sink surface can raise gradually along with the direction of coolant flow, make the laser inequality of being heated, influence the consistency of laser, this application for laser is totally unfavorable.The present invention has designed a kind of novel five-layer structure metal microchannel cooling heat sink, and five layers of sheet metal adopts the diffusion bonding technology well to realize thermo-contact and water-stop between sheet metal.The microchannel cooling heat sink of the present invention's design not only can directly cool off each diode laser matrix bar respectively in addition, and the orientation of microchannel and laser array bar is horizontal vertical, guaranteed even refrigeration, thereby obtained the consistency of good laser the laser array bar.Therefore in addition because sandwich construction microchannel cooling heat sink itself is very thin, repeatedly the battle array spacing is also very little to utilize the high-power laser diode of its preparation, thereby has improved the Output optical power density of laser.
Description of drawings:
Fig. 1 is the multitube layer of multilayer micro-channel heat sink of the present invention
Fig. 2 is the cooling fluid guide layer of multilayer micro-channel heat sink of the present invention
Fig. 3 is the sealant of multilayer micro-channel heat sink of the present invention
Fig. 4 is a multilayer micro-channel heat sink of the present invention
Fig. 5 is a cooling fluid sealant of the present invention
Fig. 6 is a fixed bed of the present invention
Fig. 7 is cooling fluid sealing of the present invention and electric insulation layer
Fig. 8 is a micro-channel heat sink cooling high power semiconductor laser alternating array structural representation of the present invention
Embodiment: describe the present invention in detail below in conjunction with the drawings and specific embodiments:
Repeatedly battle array of the present invention includes: sheet metal 1,5 and 6, microchannel 2, cooling fluid manhole appendix 3, fixing hole 4, water-guiding hole 7, micro-channel heat sink 8, insulation elastomeric material 9 and 10, clamping plate 11, water-guiding hole 12, cooling passage 13, laser array bar 14, positive and negative electrode 15, fixed lever 16, cooling passage 17.
Preparation has cooling fluid manhole appendix 3, fixing hole 4, water-guiding hole 7 on sheet metal 5, and sheet metal 5 can be chosen 15mm * 15mm * 0.5mm, and the diameter of water-guiding hole 7 can be chosen 0.1mm, and its spacing can be chosen 0.1mm; The Edge Distance of the sheet metal nearby 5 that the centre-to-centre spacing of water-guiding hole 7 and the little open-work of a row 7 are parallel can be chosen 0.3mm, and the distance of the center of little open-work 7 at two ends and sheet metal 5 both sides can be chosen 1.8mm; The penetrating cooling fluid manhole appendix 3 on the position of cooling fluid manhole appendix 3 and fixing hole 4 and size shape and the sheet metal 1 and the position of fixing hole 4 are corresponding.
The shape of sheet metal 6 can be chosen 15mm * 15mm * 0.5mm, utilize micromachining technology to prepare penetrating cooling fluid manhole appendix 3 and fixing hole 4 on sheet metal 6, the position of penetrating cooling fluid manhole appendix 3 and fixing hole 4 is corresponding on its position and size shape and the sheet metal 1.
Insulation elastomeric material 9 can be chosen 15mm * 13mm * 0.115mm, on insulation elastomeric material 9, prepare penetrating cooling fluid manhole appendix 3, fixing hole 4, its position and geomery are consistent with penetrating cooling fluid manhole appendix 3 and fixing hole 4 on the sheet metal 1, clean up after preparing.Insulation elastomeric material 10 shapes can be chosen 15mm * 13mm * 0.115mm, on insulation elastomeric material 10, prepare a penetrating cooling fluid manhole appendix 3, fixing hole 4, its position and geomery are consistent with penetrating cooling fluid manhole appendix 3 and fixing hole 4 on the sheet metal 1, clean up after preparing.
The shape of clamping plate 11 can be chosen 15mm * 12mm * 10mm, preparation water-guiding hole 12, fixing hole 4, cooling passage 13 on clamping plate 11.Cooling fluid manhole appendix 3 and fixing hole 4 penetrating on the position of water-guiding hole 12 and fixing hole 4 and geomery and the sheet metal 1 are corresponding; The diameter of cooling passage 13 can be chosen 5mm, and cooling passage 13 is communicated with water-guiding hole 12, cleans up after preparing.
Earlier laser array bar 14 back-offs are welded on the relevant position of the micro-channel heat sink 8 after the metallization, the elastoplast 9 that will insulate again is fixed on relevant position on the micro-channel heat sink 8, form a diode laser matrix unit, a plurality of such unit are come into line and insulation elastomeric material 10 on its two ends add respectively in the same way, add clamping plate 11 respectively at last again at its two ends, tighten fixing with fixed lever 16 by fixing hole 4, realize good water-stop and electrically contact, just burn-on at last, negative electrode 15 forms a complete sealing and adorns repeatedly battle array of high-effective multilayer structure micro-channel heat sink cooling laser diode.
Claims (1)
1, the preparation of high-power semiconductor laser alternating array power is characterized in that:
(1) on sheet metal 1, prepares microchannel, cooling passage, cooling fluid manhole appendix and fixing hole,, and sheet metal 1 cleaned up sheet metal 1 surface finish;
(2) preparation cooling fluid manhole appendix and fixing hole on sheet metal 5, the position of its manhole appendix and fixing hole, size and dimension are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 5; Prepare water-guiding hole on sheet metal 5, the center of each water-guiding hole is corresponding with the center, microchannel on the sheet metal 5, with sheet metal 5 surface finish, and sheet metal 5 is cleaned up;
(3) preparation cooling fluid manhole appendix and fixing hole on sheet metal 6, its position of cooling fluid manhole appendix and fixing hole, size and shape are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 6, with sheet metal 6 surface finish, and sheet metal 6 are cleaned up;
(4) successively sheet metal 1 is placed on the sheet metal 6, again sheet metal 5 is placed on the sheet metal 1, then another sheet metal 1 ° is placed on the sheet metal 5 along its axis ef Rotate 180, put another sheet metal 6 at last again, upward the cooling fluid manhole appendix is corresponding with fixing hole for each layer when stacking, stack back diffusion bonding in certain pressure, temperature and time scope, make the five-layer structure micro-channel heat sink;
(5) with the micro-channel heat sink surface finish and clean up, plate titanium, platinum, gold thin film and metallization respectively in tow sides and a side then near one side place, microchannel, again its front or reverse side are plated indium, make and electrically contact;
(6) on the insulation elastomeric material, prepare cooling fluid manhole appendix and fixing hole, the position of cooling fluid manhole appendix and fixing hole, size and shape are corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 1, the insulation elastomeric material is slightly thicker than the laser array bar, cleans up after preparing;
(7) prepare cooling fluid manhole appendix and fixing hole on the insulation elastomeric material, position, size and the shape of cooling fluid manhole appendix and fixing hole is corresponding with cooling fluid manhole appendix and fixing hole on the sheet metal 1, cleans up after preparing;
(8) prepare water-guiding hole, fixing hole and cooling passage on clamping plate, the position of water-guiding hole and fixing hole, size shape are corresponding respectively with cooling fluid manhole appendix and fixing hole on the sheet metal 1, and cooling passage is communicated with water-guiding hole and cleans up after preparing;
(9) earlier laser array bar back-off is welded in the zone that is coated with the scolder indium on the micro-channel heat sink, the elastomeric material that will insulate again is placed on the relevant position of micro-channel heat sink and fixes, form a diode laser matrix unit, a plurality of such unit are come into line and the first insulation elastomeric material that adds respectively at its two ends in the same way, add clamping plate, tighten fixing by fixing hole with fixed lever at last, realize good water-stop and electrically contact, the positive and negative electrode of burn-oning at last forms repeatedly battle array of a complete sealing dress high-effective multilayer structure micro-channel heat sink cooling laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02133088 CN1202602C (en) | 2002-09-28 | 2002-09-28 | Manufacture of high-power semiconductor laser stacked array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02133088 CN1202602C (en) | 2002-09-28 | 2002-09-28 | Manufacture of high-power semiconductor laser stacked array |
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| CN1402394A true CN1402394A (en) | 2003-03-12 |
| CN1202602C CN1202602C (en) | 2005-05-18 |
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| CN 02133088 Expired - Fee Related CN1202602C (en) | 2002-09-28 | 2002-09-28 | Manufacture of high-power semiconductor laser stacked array |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300903C (en) * | 2004-03-23 | 2007-02-14 | 中国科学院长春光学精密机械与物理研究所 | Composite heat sink semiconductor laser structure and its prepn. method |
| CN100370659C (en) * | 2005-04-18 | 2008-02-20 | 中国科学院长春光学精密机械与物理研究所 | Micro-channel heat sink structure for semiconductor laser head pumping source and preparing method thereof |
| CN100568491C (en) * | 2004-07-01 | 2009-12-09 | 国际商业机器公司 | The equipment and the method that are used for the microchannel cooling of semiconductor integrated circuit package |
| CN1821051B (en) * | 2005-02-14 | 2011-02-02 | 精工爱普生株式会社 | Microchannel structure and its manufacturing method, light source device, and projector |
| CN101738125B (en) * | 2008-11-05 | 2012-08-15 | 中国科学院大连化学物理研究所 | Micro-channel heat exchanger chip and micro heat exchanger having distributed ports structure |
| CN101827682B (en) * | 2007-09-19 | 2014-07-02 | 巴恩斯集团 | Diffusion bonding |
| CN104269735A (en) * | 2014-10-09 | 2015-01-07 | 西安炬光科技有限公司 | Mechanical connection conducting cooling type semiconductor laser unit stack packaging structure |
| CN104347429A (en) * | 2013-07-25 | 2015-02-11 | 常州鼎悦电子科技有限公司 | Micro channel heat sink manufacturing method |
| CN104810722A (en) * | 2015-05-26 | 2015-07-29 | 北京弘光浩宇科技有限公司 | Monolithic macro-channel heat sink for semiconductor laser and semiconductor laser |
| CN107160019A (en) * | 2017-02-23 | 2017-09-15 | 广东工业大学 | The welder and method of a kind of micro-channel heat sink for semi-conductor laser lamination |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100452578C (en) * | 2007-06-20 | 2009-01-14 | 中国科学院长春光学精密机械与物理研究所 | Micro-channel thermal deposit chemical cleaning device of semiconductor laser array and alternation array |
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- 2002-09-28 CN CN 02133088 patent/CN1202602C/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300903C (en) * | 2004-03-23 | 2007-02-14 | 中国科学院长春光学精密机械与物理研究所 | Composite heat sink semiconductor laser structure and its prepn. method |
| CN100568491C (en) * | 2004-07-01 | 2009-12-09 | 国际商业机器公司 | The equipment and the method that are used for the microchannel cooling of semiconductor integrated circuit package |
| CN1821051B (en) * | 2005-02-14 | 2011-02-02 | 精工爱普生株式会社 | Microchannel structure and its manufacturing method, light source device, and projector |
| CN100370659C (en) * | 2005-04-18 | 2008-02-20 | 中国科学院长春光学精密机械与物理研究所 | Micro-channel heat sink structure for semiconductor laser head pumping source and preparing method thereof |
| CN101827682B (en) * | 2007-09-19 | 2014-07-02 | 巴恩斯集团 | Diffusion bonding |
| CN101738125B (en) * | 2008-11-05 | 2012-08-15 | 中国科学院大连化学物理研究所 | Micro-channel heat exchanger chip and micro heat exchanger having distributed ports structure |
| CN104347429B (en) * | 2013-07-25 | 2017-05-17 | 常州鼎悦电子科技有限公司 | Micro channel heat sink manufacturing method |
| CN104347429A (en) * | 2013-07-25 | 2015-02-11 | 常州鼎悦电子科技有限公司 | Micro channel heat sink manufacturing method |
| CN104269735A (en) * | 2014-10-09 | 2015-01-07 | 西安炬光科技有限公司 | Mechanical connection conducting cooling type semiconductor laser unit stack packaging structure |
| CN104269735B (en) * | 2014-10-09 | 2017-02-08 | 西安炬光科技有限公司 | Mechanical connection conducting cooling type semiconductor laser unit stack packaging structure |
| CN104810722A (en) * | 2015-05-26 | 2015-07-29 | 北京弘光浩宇科技有限公司 | Monolithic macro-channel heat sink for semiconductor laser and semiconductor laser |
| CN104810722B (en) * | 2015-05-26 | 2018-10-12 | 北京弘光浩宇科技有限公司 | The macro channel of semiconductor laser one chip is heat sink and semiconductor laser |
| CN107160019A (en) * | 2017-02-23 | 2017-09-15 | 广东工业大学 | The welder and method of a kind of micro-channel heat sink for semi-conductor laser lamination |
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| Publication number | Publication date |
|---|---|
| CN1202602C (en) | 2005-05-18 |
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