CN1400698A - Structure of reflecting coating layer for cavity surface of semiconductor laser - Google Patents
Structure of reflecting coating layer for cavity surface of semiconductor laser Download PDFInfo
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- CN1400698A CN1400698A CN 02136624 CN02136624A CN1400698A CN 1400698 A CN1400698 A CN 1400698A CN 02136624 CN02136624 CN 02136624 CN 02136624 A CN02136624 A CN 02136624A CN 1400698 A CN1400698 A CN 1400698A
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Abstract
This invention provides a multilayer structure of realizing high reflection coating of semiconductor back cavity surface aiming at increasing output power of laser to reduce threshold current and improve various performances of laser characterizing that this invention applies Ag of cheap price and easy vaporization as the high reflection coating material and use other oxide dielectric films with refractive index close to 1.8 eg, ZrO2, Sio, Al2O3 as the backing and protection film to realize high reflection coating with electronic beam vapor-deposition method on laser back cavity surface. Experiments on laser show that the coating can increase layer power by 60%, reduce threshold current by 20-50% with fine chemical stability, thermal stability and durable.
Description
Technical field
The present invention relates to a kind of structure that is used for the films on cavity surfaces of semiconductor lasers reflectance coating, or rather, the invention provides a kind of film structure of realizing semiconductor laser rear facet highly-reflective coating, belong to semiconductor laser technology field.
Background technology
Since semiconductor laser in 1962 comes out, little with its volume, in light weight, the power height, the life-span is long, and is easy to use and gain great popularity.Semiconductor laser forms the resonant cavity of laser because of himself cleavage surface, the reflectivity of cleavage surface only about 30%, and projection ratio nearly 70%, thus the laser that device produces has 2/3rds to slattern from rear facet because of projection.The operation wavelength of semiconductor laser is in addition measured and is regulated by mixing Al generally speaking, and when optical energy density was very big, the aluminium (Al) of chamber face active area was very easily oxidized, caused the power of laser to descend.Also add the operational environment humidity, airborne bronsted lowry acids and bases bronsted lowry makes the chamber face be vulnerable to corrode, and influences laser output, causes differential quantum efficency to descend, and threshold current density increases, and reduces the useful life of laser.For this reason, people take the method for high reflecting medium film of laser rear facet evaporation or metal film, make the light reflection from the rear facet projection, from front facet output, have improved optical output power, stop the Al oxidation, have reduced threshold current, improve device performance.Because hardness, adhesive force and the chemical stability of sull are all very good, at present plating films on cavity surfaces of semiconductor lasers generally all adopts oxide dielectric film as high-reflecting film and antireflective film system (fourth National Day etc., " end mirror face plated film is to the influence of MQW-LD photoelectric properties with DC-PBH structure ", semiconductor technology, 1996; 4; 2).Know by the Film Optics principle, realize 90% above high reflectance, the thick deielectric-coating in λ/4 that needs the high low-refraction of multilayer to replace, when the laser excitation wavelength increased, it is very thick that the rete gross thickness begins to become, and falls from the chamber emaciated face easily like this.People have expected the high reflecting metal film for this reason.The semiconductor laser rear facet mainly adopts gold (Au) film to do high reflecting metal film (Yang Xiaoyan, " research of films on cavity surfaces of semiconductor lasers SiO, Au coating ", semiconductor technology, 1996 at present; 4; 2).Gold (Au) is though there is the reflectivity of very high (nearly 99%) at infrared region, and chemical stability is fine, be difficult for oxidation and be not subjected to air pollution, can keep very high reflectivity, but gold is relatively more expensive, increase the laser cost greatly, and at the visible region reflectivity is not very high (woods Yongchang etc., " optical thin film principle ", National Defense Industry Press, 255 pages), can not be at this wave band as effective cavity surface film coating material of laser.
Summary of the invention
The object of the invention is to provide a kind of structure that is used for semiconductor laser rear facet reflectance coating.Main adopt electron beam evaporation method with argent (Ag) as Coating Materials, in conjunction with other oxide dielectric film, successful implementation semiconductor laser rear facet high-reflecting film coating.Silver is the metal material that high reflectance is arranged at visible region and infrared region; and be easy to evaporation; but it is poor that it exists with the tack of semi-conducting material; technical problems such as mechanical strength and chemical stability are also bad, but adopt method such as the rebasing and deielectric-coating protection of deielectric-coating to be easy to overcome this shortcoming.
The laser rear facet high-reflecting film coating structure that the present invention adopts is: the sull of λ/4n thick-oxide film/80-100nm thick same composition of thick Ag film/40-50nm and structure, and wherein λ is the laser excitation wavelength, n is the sull refractive index.Here the ground floor oxide plays double actions such as preventing device short circuit and increase Ag film adhesion, and thickness is strict controlled in λ/4n, and main purpose is anti-reflection.The light that sends when the laser rear facet is during through this oxide-film, obtains once anti-reflectionly, arrives the Ag film by total reflection, through this film the time, obtains once anti-reflectionly, penetrates from front facet at last, thereby improved laser output power.Last one deck oxide plays effects such as protection Ag film and increase mechanical strength, and its THICKNESS CONTROL need not strictness.Sull can be from ZrO
2, SiO, Al
2O
3, Y
2O
3Etc. the mechanical strength height, refractive index is a kind of near selecting in 1.8 the oxide coating materials again.
From the above mentioned, compare with conventional semiconductor laser rear facet technology, patent of the present invention has following four big advantages:
First: film structure is simple, implements easily, and cost is low, is more suitable in production application.
Second: because silver all has very high reflectance at visible region to infrared region, thereby this film structure is suitable for the high reflection of different-waveband semiconductor laser rear facet plated film.
The the 3rd: though silver-colored hardness own and adhesion etc. are all very poor, it is mixed between two deielectric-coating, makes this film system that good chemical stability, thermal stability and fastness be arranged, can effectively protect the semiconductor laser rear facet.
The 4th: adopt this film can improve semiconductor laser power about 60%, look dissimilar laser, its threshold current reduces 20%50%.
Description of drawings
Fig. 1 is the structural representation of semiconductor laser rear facet reflectance coating.1 represents the emitting cavity face among the figure; 2 represent upper/lower electrode; 3 is rear facet; 4 is oxide dielectric film; 5 is the Ag metal film; 6 is oxide dielectric film.
Fig. 2 is an I-P characteristic curve before and after the embodiment 1 described RWG structure 1.3 μ m semiconductor laser rear facet highly-reflective coating plated films.
Fig. 3 is an I-P characteristic curve before and after the embodiment 1 described BH structure 1.3 μ m semiconductor laser rear facet highly-reflective coating plated films.
Fig. 4 is an I-P characteristic curve before and after the embodiment 2 described 808nm semiconductor laser rear facet highly-reflective coating plated films.
Abscissa among Fig. 2,3,4 is an electric current, the mA of unit; Ordinate is a luminous power, and unit is mW.
Embodiment
Further specifying substantive distinguishing features of the present invention and advance below by embodiment, but limit the present invention absolutely not, also is that the present invention is confined to embodiment absolutely not.Embodiment 1:1.3 μ m semiconductor laser rear facet highly reflecting films architecture film structure:
Sequence coating materials thickness (nm)
1 ZrO
2 164
2 Ag 80
3 ZrO
250 experimental results:
Respectively with ridge waveguide (RWG) with bury two kind of 1.3 μ m of heterogeneous boundary (BH) structure laser as sample, on the singulated dies rear facet, prepare above-mentioned film structure with electron beam evaporation plating, by electric current-power characteristic before and after the test plated film, can find out that each laser power improves 60-65%, threshold current reduces 20-50%, as Fig. 2 and 3.Embodiment 2:808nm AlGaAs/GaAs laser rear facet highly reflecting films architecture film structure:
Sequence coating materials thickness (nm)
1 Al
2O
3 200
2 Ag 80
3 Al
2O
350 experimental results:
Limit single quantum well (SCH) structure AlGaAs/GaAs laser respectively as sample with 808nm, after this film system of singulated dies rear facet electron beam evaporation plating, laser power improves more than 60%, and threshold current reduces about 20%, as Fig. 4.
Claims (4)
1. a film structure that is used for the films on cavity surfaces of semiconductor lasers reflectance coating is characterized in that it is made of the sull of λ/4n thick-oxide film/80-100nm thick same composition of thick Ag film/40-50nm and structure.λ is the laser excitation wavelength in the formula, and n is the sull refractive index, and it is worth near 1.8.
2. by the described films on cavity surfaces of semiconductor lasers reflectance coating film structure that is used for of claim 1, it is characterized in that described sull is Al
2O
3, ZrO
2, SiO, Y
2O
3A kind of in the coating materials.
3. by the described film structure that is used for the films on cavity surfaces of semiconductor lasers reflectance coating of claim 1, it is characterized in that 1.3 μ m semiconductor laser rear facet highly reflecting films architecture are 164nm ZrO
2/ 80nmAg/50nm ZrO
2
4. by the described film structure that is used for the films on cavity surfaces of semiconductor lasers reflectance coating of claim 1, it is characterized in that 808nmAlGaAs/GaAs semiconductor laser rear facet highly reflecting films architecture is 200nm Al
2O
3/ 80nmAg/50nm Al
2O
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021366241A CN1184727C (en) | 2002-08-23 | 2002-08-23 | Structure of reflecting coating layer for cavity surface of semiconductor laser |
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|---|---|---|---|
| CNB021366241A CN1184727C (en) | 2002-08-23 | 2002-08-23 | Structure of reflecting coating layer for cavity surface of semiconductor laser |
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|---|---|
| CN1400698A true CN1400698A (en) | 2003-03-05 |
| CN1184727C CN1184727C (en) | 2005-01-12 |
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|---|---|---|---|
| CNB021366241A Expired - Fee Related CN1184727C (en) | 2002-08-23 | 2002-08-23 | Structure of reflecting coating layer for cavity surface of semiconductor laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111722311A (en) * | 2020-07-27 | 2020-09-29 | 中国科学院上海光学精密机械研究所 | Composite function dispersion mirror structure |
| CN112366516A (en) * | 2020-09-28 | 2021-02-12 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
-
2002
- 2002-08-23 CN CNB021366241A patent/CN1184727C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111722311A (en) * | 2020-07-27 | 2020-09-29 | 中国科学院上海光学精密机械研究所 | Composite function dispersion mirror structure |
| CN111722311B (en) * | 2020-07-27 | 2021-05-04 | 中国科学院上海光学精密机械研究所 | Composite function dispersion mirror structure |
| CN112366516A (en) * | 2020-09-28 | 2021-02-12 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
| CN112366516B (en) * | 2020-09-28 | 2023-03-14 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
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| Publication number | Publication date |
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| CN1184727C (en) | 2005-01-12 |
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