CN109510060B - A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser - Google Patents
A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser Download PDFInfo
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- CN109510060B CN109510060B CN201811635606.7A CN201811635606A CN109510060B CN 109510060 B CN109510060 B CN 109510060B CN 201811635606 A CN201811635606 A CN 201811635606A CN 109510060 B CN109510060 B CN 109510060B
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- Prior art keywords
- slab
- crystal
- reflection
- reflecting surface
- fully reflecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
The present invention relates to a kind of anti-reflection structures of crystal fully reflecting surface for slab laser, including slab crystal and are arranged in the low-refraction SiO of slab crystal outer layer2Film, the structure further include being arranged in slab crystal and SiO2With two dimensional flat form by the taper anti-reflection micro-structure of multiple sub-wavelength dimensions of some cycles orthogonal arrangement between film.Compared with prior art, the present invention has many advantages, such as to be greatly reduced incidence angle at fully reflecting surface and is less than the reflectivity of light of the cirtical angle of total reflection and practical.
Description
Technical field
The present invention relates to optical material fields, more particularly, to a kind of subtracting for crystal fully reflecting surface for slab laser
Catoptric arrangement.
Background technique
Slab laser can reduce the unfavorable of the factors such as fuel factor and stress birfringence due to its total reflection light line structure
It influences, and obtains high power output and good beam quality, thus be widely used in various high energy laser systems.In height
In power slab laser, fully reflecting surface by slab crystal and outer layer low-refraction SiO2Film is constituted, low-refraction SiO2
Film is connected again with heat sink to take away waste heat.In slab laser, spontaneous radiation amplification (ASE) is limitation laser output energy
An important factor for amount and reduction beam quality.
ASE is a kind of stimulated emission, and when gain media generates population inversion by pumping, ASE will be generated.ASE light
Line can be divided into 2 classes: a kind of ASE light is greater than the angle of total reflection in the incidence angle of fully reflecting surface, and this ASE light can not inhibit, but by
It is few in the big number of oscillation of its angle, it is not the main path of ASE amplification；Another kind of ASE light is small in the incidence angle of fully reflecting surface
In the angle of total reflection, it is incident on the smaller light of lath upper angle, the number vibrated in crystal is more, they are to lead to ASE
The key factor deteriorated rapidly.ASE is inhibited to need to reduce incidence angle in slab crystal anti-less than the ASE light of the cirtical angle of total reflection
It penetrates.
The reflection that incidence angle is less than the ASE light of the cirtical angle of total reflection in slab crystal mainly consists of two parts: lath is brilliant
Body and low-refraction SiO2The reflection of film interface, SiO2The reflection of film and metal heat sink interface.Existing research at present passes through increasing
Absorbing film is added to greatly reduce SiO2The reflection of film and metal heat sink interface, but the method is for reducing slab crystal and SiO2
The reflection of film interface is simultaneously not suitable for.In practical applications, a kind of new method is needed to reduce slab crystal and low-refraction
SiO2The reflection of film interface.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind to be used for slab laser
The anti-reflection structure of the crystal fully reflecting surface of device.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser, including slab crystal and setting are in plate
The low-refraction SiO of crystal outer layer2Film, the structure further include being arranged in slab crystal and SiO2It is flat with two dimension between film
Face form presses the taper anti-reflection micro-structure of multiple sub-wavelength dimensions of some cycles orthogonal arrangement.
Preferably, the period of the taper anti-reflection micro-structure by periodic arrangement is less than 293nm.
Preferably, the period of the taper anti-reflection micro-structure by periodic arrangement is 290nm.
Preferably, the height of the taper anti-reflection micro-structure by periodic arrangement is greater than 400nm.
Preferably, the height of the taper anti-reflection micro-structure by periodic arrangement is 420nm.
Preferably, the material of the slab crystal is Nd:YAG crystal.
Preferably, the SiO2The thickness of film is greater than 2 μm.
A kind of Slab Geometry Laser Resonator, the Slab Geometry Laser Resonator include being used for lath as described in claim 1
The anti-reflection structure of the crystal fully reflecting surface of laser.
Compared with prior art, the invention has the following advantages that
(1) slab crystal and low-refraction SiO of the present invention in traditional slab laser fully reflecting surface structure2Film it
Between be provided with certain size periodic arrangement taper anti-reflection structure, by design taper anti-reflection micro-structure period and height
Degree greatly reduces the reflectivity that incidence angle at fully reflecting surface is less than the light of the cirtical angle of total reflection.
(2) the taper anti-reflection micro-structure of the crystal fully reflecting surface for slab laser of the invention is periodic arrangement,
Structure is relatively simple, and preparation tolerance is larger, practical.
Detailed description of the invention
Fig. 1 is the schematic diagram of anti-reflection structure partial cross section of the invention.
Fig. 2 is the structural schematic diagram of traditional fully reflecting surface.
Fig. 3 is the structural schematic diagram using the Slab Geometry Laser Resonator of anti-reflection micro-structure of the invention.
Fig. 4 is the anti-reflection micro-structure of fully reflecting surface of the present invention and the reflectivity spectrogram of traditional fully reflecting surface.
Fig. 5 is the two-dimentional arrangement schematic diagram of taper anti-reflection micro-structure.
Description of symbols in figure:
1, slab crystal, 2, SiO2Film, 3, taper anti-reflection micro-structure, 4, anti-reflection film, 5, heat sink, 6, pump light, 7,
Working laser.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.The present embodiment is with technical solution of the present invention
Premised on implemented, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to
Following embodiments.
Embodiment
As described in figures 1 and 5, the present embodiment provides a kind of antireflective knots of crystal fully reflecting surface for slab laser
Structure, the low-refraction SiO including slab crystal 1 and outer layer2Film 2, slab crystal 1 and SiO2A scale is provided between film 2
The taper anti-reflection micro-structure 3 of very little periodic arrangement.Fig. 2 show the structure of traditional fully reflecting surface, including 1 He of slab crystal
The low-refraction SiO of outer layer2Film 2, slab crystal 1 and SiO2It is plane between film 2.The material of slab crystal 1 is Nd:YAG
Crystal.SiO2The thickness of film 2 is greater than 2 μm, and value is 3 μm in the present embodiment.The period of taper anti-reflection micro-structure 3 is less than
293nm is highly greater than 400nm, and it is highly 420nm that the period, which is 290nm, in the present embodiment.
It is illustrated in figure 3 the Slab Geometry Laser Resonator that the anti-reflection micro-structure based on above-mentioned fully reflecting surface is formed, work
Optical maser wavelength is 1064nm, and laser working medium is slab crystal 1, and lath end face corner cut is 45 °, and it is anti-reflection to be coated with 1064nm
Film 4, the fully reflecting surface of slab crystal 1 are provided with the taper anti-reflection micro-structure 3 of the periodic arrangement of certain size, and are coated with SiO2
Film 2 provides total reflection, SiO2Film 2 is connected with heat sink 5 again takes away waste heat, and pump light 6 is from the surface feeding sputtering of lath substrate 1
Working media energy supply, total reflection of the working laser 7 inside lath substrate 1 through upper and lower surface is with tortuous optic path and by work
Make medium amplification.The period for controlling taper anti-reflection micro-structure 3 is 290nm, is highly 420nm, so that incident at fully reflecting surface
The reflectivity that angle is less than the light of the cirtical angle of total reflection substantially reduces, and the cirtical angle of total reflection will not change.
Reflectivity spectrogram such as Fig. 4 institute of the anti-reflection micro-structure of fully reflecting surface provided in this embodiment and traditional fully reflecting surface
Show, the cirtical angle of total reflection is about 54 °.Comparison discovery is compared to traditional fully reflecting surface structure, in slab crystal and SiO2Film
Between be provided with certain size periodic arrangement taper anti-reflection micro-structure after, incidence angle is less than the light of the cirtical angle of total reflection
Reflectivity substantially reduces, and the average reflectance that incidence angle is less than the light of the cirtical angle of total reflection is reduced to 0.76% from 3.39%, subtracts
It is about 4 times small.The result shows that the anti-reflection micro-structure for the crystal fully reflecting surface that the present invention designs efficiently reduces fully reflecting surface
Locate the reflectivity that incidence angle is less than the light of the cirtical angle of total reflection.
It can be seen that the present invention is in slab crystal and SiO2The taper anti-reflection of the periodic arrangement of certain size is set between film
Micro-structure is penetrated, can substantially reduce the reflectivity that incidence angle at fully reflecting surface is less than the light of the cirtical angle of total reflection, for suppressing plate
The spontaneous radiation amplification of laser has very good effect.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be within the scope of protection determined by the claims.
Claims (8)
1. a kind of anti-reflection structure of the crystal fully reflecting surface for slab laser, including slab crystal (1) and setting exist
The low-refraction SiO of slab crystal (1) outer layer2Film (2), which is characterized in that the structure further includes being arranged in slab crystal (1)
With SiO2With two dimensional flat form by the taper antireflective of multiple sub-wavelength dimensions of some cycles orthogonal arrangement between film (2)
Micro-structure (3).
2. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 1, feature
It is, the period of the taper anti-reflection micro-structure (3) is less than 293nm.
3. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 2, feature
It is, the period of the taper anti-reflection micro-structure (3) is 290nm.
4. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 1, feature
It is, the height of the taper anti-reflection micro-structure (3) is greater than 400nm.
5. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 4, feature
It is, the height of the taper anti-reflection micro-structure (3) is 420nm.
6. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 1, feature
It is, the material of the slab crystal (1) is Nd:YAG crystal.
7. a kind of anti-reflection structure of crystal fully reflecting surface for slab laser according to claim 1, feature
It is, the SiO2The thickness of film (2) is greater than 2 μm.
8. a kind of Slab Geometry Laser Resonator, which is characterized in that the Slab Geometry Laser Resonator includes as described in claim 1
The anti-reflection structure of crystal fully reflecting surface for slab laser.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811635606.7A CN109510060B (en) | 2018-12-29 | 2018-12-29 | A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser |
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| CN201811635606.7A CN109510060B (en) | 2018-12-29 | 2018-12-29 | A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser |
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| CN109510060A CN109510060A (en) | 2019-03-22 |
| CN109510060B true CN109510060B (en) | 2019-10-22 |
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| CN109830879B (en) * | 2019-03-27 | 2020-07-24 | 中国科学院理化技术研究所 | Laser module and laser instrument based on birefringent crystal |
| CN115441299B (en) * | 2022-11-08 | 2023-02-10 | 中国科学院长春光学精密机械与物理研究所 | Laser crystal assembly and laser device |
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| US6094297A (en) * | 1998-07-07 | 2000-07-25 | Trw Inc. | End pumped zig-zag slab laser gain medium |
| US7590160B2 (en) * | 2004-11-26 | 2009-09-15 | Manni Jeffrey G | High-gain diode-pumped laser amplifier |
| US8379680B1 (en) * | 2009-08-10 | 2013-02-19 | The Boeing Company | Direct cooling of thin disk lasers |
| WO2011027579A1 (en) * | 2009-09-07 | 2011-03-10 | 三菱電機株式会社 | Planar waveguide laser apparatus |
| CN106099629B (en) * | 2016-08-04 | 2018-10-26 | 同济大学 | A kind of method that ultra-wide angular range inhibits the spontaneous amplification radiation of slab laser |
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