CN1549352A - Al-Ga-In-As multi-quantum sink super radiation luminous diode - Google Patents
Al-Ga-In-As multi-quantum sink super radiation luminous diode Download PDFInfo
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- CN1549352A CN1549352A CNA03128017XA CN03128017A CN1549352A CN 1549352 A CN1549352 A CN 1549352A CN A03128017X A CNA03128017X A CN A03128017XA CN 03128017 A CN03128017 A CN 03128017A CN 1549352 A CN1549352 A CN 1549352A
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Abstract
The present invention provides a multi-quantum-well superluminescent diode. It is characterized by that it adopts AlGaInAs/InP materials, the luminescent wavelength range of its active region is 1.25 micrometers to 1.65 micrometers, and on the n-type InP substrate successively are set lower clad, upper and lower respective limiting layers and multi-quantum-well active region positioned in them, in which the thickness of the well is 5-10 nm, and the total thickness of active region well barrier is 10-500 nm. On the upper limiting layer are successively set upper clad, etching cut-off layer, optical limiting layer and ohmic contact layer. It adopts an inverted mesa ridge waveguide structure, its two sides are equipped with polymer plane buried layer respectively, and its upper surface is equipped with plane electrode, in which the included angle theta of waveguide direction and light-outgoing end face of SLED is 75-85 deg.
Description
Technical field
The present invention relates to a kind of Al-Ga-In-As Multiple Quantum Well super-radiance light emitting diode, this device is with respect to laser spectrum width wide ranges, big with respect to light-emitting diode (LED) power output, parameter such as power output will meet certain requirement under the condition that pulse or continuous current inject, and belongs to fields such as sensing, optical communication and optic fiber gyroscope navigation.
Background technology
Need use a kind of gain device of wide spectral range in fields such as communication, sensings, for example the broad spectrum light source that needs in the dense wave division multipurpose of light communication system (DWDM); In optic fiber gyroscope navigation based on the desired broad spectrum light source of little incoherence.The spectral region of general laser (LD) is little, be several nanometers (nm) that though the LED spectral region is wide, power output is little, and the super-radiance light emitting diode spectral region is wide, power output big, good directionality, thereby is one of using light source desirable in the said system.
In recent years, SLED is the object that people study always, and the gain of light process of superradiation light-emitting and laser all is to be excited amplification process, and both fundamental differences are whether device exists vibration and modeling effect.Reduce the reflection and Fabry Perot (FP) vibration of chamber face, improving gain by one path is the key technology that realizes superradiation light-emitting.
From near the SLED of gallium aluminium arsenic/gallium arsenic (AlGaAs/GaAs) material system the early stage 850nm, 1.3 microns (μ m) of InGaAsP finally/indium phosphorus (InGaAsP/InP) material system and the SLED of 1.55 μ m; To the Multiple Quantum Well active area structure, to the strain gauge material active area structure, the main purpose of people's research and development all is to improve spontaneous radiation intensity (ASE), strengthens gain by one path from matching materials from the body material.Adopt the InGaAsP material to make SLED at 1.3 and 1.55 mu m wavebands at present, in the material growth, active area adopts the strained multiple-quantum-well structure more; On tube core structure is made, adopt the Shuan Gou plane to bury (DC-PBH) or ridge waveguide (RWG) structure; Adopt inclination, curved waveguide simultaneously, absorption, window region etc. reach wide spectral range, big power output and reduce the FP pattern in conjunction with end face plating high antireflection film, eliminate the purpose of ripple (ripple).
Conduction band offset (Δ Ec)=0.72 Δ Eg (band gap) of Al-Ga-In-As/indium phosphorus AlGaInAs/InP quantum-well materials is bigger than the conduction band offset Δ Ec=0.4 Δ Eg of InGaAsP/InP quantum-well materials, and the band gap between potential barrier and the potential well is bigger than InGaAsP/InP material, such material structure can effectively stop the leakage of high temperature download stream, improve hot properties, if adopt the strained quantum well structure can also reduce auger recombination simultaneously, can further improve quantum efficiency and hot properties.SLED is the device of working under a kind of big current condition, and consequent Joule heat is also bigger in the device, in many application, requires SLED can do powerful output simultaneously.Therefore in the scope of 1.3 and 1.55 mum wavelengths, at big electric current, under the application conditions of high power SLED, with respect to the InGaAsP material, the AlGaInAs material is the selection that is more suitable for, and the advantage that is embodied in the SLED device aspect of producing mainly is: high-quantum efficiency, high-temperature feature, power output are big.There is United States Patent (USP) 5521935 to propose at the 850nm wave band, but do not provide concrete making structure with AlGaInAs material luminescent device SLED.Usually the AlGaInAs/InP material system is made the ridge waveguide structure that luminescent device mainly adopts vertical stand shape, at article: IEEE Journal of Selected Topicsin Quantum Electronics, Vol.3, NO.2, Apr.1997 pp.672-683, Aoki et al. have then proposed to make laser with the shape ridge waveguide (RM-RWG) of falling from power.
Summary of the invention
The objective of the invention is to adopt Al-Ga-In-As/indium phosphorus AlGaInAs/InP material system to produce SLED to 1.65 mu m wavebands, reach high-quantum efficiency, high-temperature feature, purpose that power output is big at 1.25 μ m.
Technical scheme of the present invention is: it is the material of strained multiple-quantum-well structure that Multiple Quantum Well super-radiance light emitting diode of the present invention adopts active area, by photoetching, corrosion, the somatomedin insulating barrier, open electrode window through ray, technologies such as sputter, specifically be to adopt Al-Ga-In-As/indium phosphorus AlGaInAs/InP material, the emission wavelength scope of active area is that 1.25 μ m are to 1.65 μ m, be included on the n type indium phosphorus InP substrate under-clad layer is arranged successively, limiting layer and be positioned at wherein Multiple Quantum Well active area respectively up and down, wherein the thickness of trap is 5-10nm, the gross thickness that the active area trap is built is 10-500nm, on upper limiting layer, be followed successively by top covering, the corrosion cutoff layer, light limiting layer, ohmic contact layer and electrode, the light limiting layer central area constitutes waveguiding structure.
Described Multiple Quantum Well super-radiance light emitting diode is to adopt the shape ridge waveguide structure of falling from power, and the shape ridge waveguide both sides of falling from power are polymer plane buried layers, are plane electrode on it.
Described Multiple Quantum Well super-radiance light emitting diode, wherein the angle theta of wave guide direction and super-radiance light emitting diode SLED light output end is 75-85 °.
Described Multiple Quantum Well super-radiance light emitting diode is in two bright dipping end faces plating 10
-3～10
-4The high anti-reflection multilayer optical deielectric-coating of reflectivity.
It is best that described Multiple Quantum Well super-radiance light emitting diode, Multiple Quantum Well active area have 4～10 pairs of traps to build.
The advantage of the technical program is 1. to adopt the high and good AlGaInAs material of hot properties of quantum efficiency at 1.25 μ m to 1.65 mu m wavebands; 2. reduce serial resistance with the RM-RWG structure, improve injection efficiency, thereby improve the quantum efficiency and the hot properties of device; 3. employing planar electrode structure has improved the reliability of device.4. after adopting the inclination waveguiding structure, the requirement of high antireflection film can reduce by 1 to 2 order of magnitude, helps realizing the SLED of low ripple index
Description of drawings
Fig. 1 is the present invention's shape inclined ridges waveguide super-radiance light emitting diode cross-sectional structure schematic diagram of falling from power;
Fig. 2 is the present invention's shape inclined ridges waveguide super-radiance light emitting diode longitudinal cross-section schematic diagram of falling from power;
Fig. 3 is the AlGaInAs/InP material grown junction composition that the present invention proposes;
Fig. 4 is AlGaInAs Multiple Quantum Well active area structure figure;
Fig. 5 is the different step schematic diagram in the manufacturing process.
Embodiment
Adopt the AlGaInAs/InP material system, the emission wavelength scope of active area is that 1.25 μ m are to 1.65 μ m.Specifically be included on the n type InP substrate under-clad layer is arranged successively, limiting layer (SCH) and be positioned at wherein Multiple Quantum Well active area respectively up and down, wherein the thickness of trap is 5-10nm, and the gross thickness that the active region trap is built is between the 10-500nm, and it is best that the Multiple Quantum Well active area has 4～10 pairs of traps to build.
Wherein limiting layer is ledge structure or gradual limiting structure (GRIN-SCH) respectively respectively, is followed successively by top covering on upper limiting layer, corrosion cutoff layer, light limiting layer and ohmic contact layer.
Usually the RWG structure is a vertical stand shape ridge waveguide, and it causes the problem that the device series resistance is big easily.For series resistance that reduces the SLED device and the Joule heat that produces therefrom, propose to adopt the wide shape ridge waveguide structure of falling from power of contact area in the present invention, the wide contact area of shape ridge waveguide structure of falling from power simultaneously can also improve the injection efficiency of charge carrier in the series resistance that reduces device, thereby can improve the power output of SLED device.After producing the shape ridge waveguide of falling from power, do the plane with polymer again and bury and finally obtain plane electrode, can guarantee the long-term reliability of device electrode like this.
In order to effectively reduce the FP pattern, eliminate ripple, adopt the inclination waveguide to be coated with the high antireflection film structure in the present invention in conjunction with end face, wherein the angle theta of the direction of waveguide and super-radiance light emitting diode SLED light output end is 75-85 °.Usually after adopting the inclination waveguiding structure, the requirement of high antireflection film can reduce by 1 to 2 order of magnitude, helps realizing the SLED of low ripple index.
Fig. 1 is the cross-sectional view of AlGaInAs/InP Multiple Quantum Well super-radiance light emitting diode of the present invention, and 1 is N type substrate among the figure, and 2 is N type under-clad layer, 3 are following respectively limiting layer, and 4 be the Multiple Quantum Well active area, difference limiting layer on 5,6 is P type top covering, and 7 are the corrosion cutoff layer, and 8 is light limiting layer, 9 is ohmic contact layer, 10 is dielectric insulation layer, and 11 is polymer, and 12 is P type electrode layer, 13 is N type electrode layer, and 15 are the shape inclined ridges waveguide of falling from power.
Fig. 2 is the longitudinal cross-section schematic diagram, and wherein 14 is high anti-reflection multilayer optical media coating.Wherein θ is the angle of wave guide direction and SLED light output end, is 75-85 °.15 are the shape inclined ridges waveguide of falling from power.
Layers of material such as following description among Fig. 1: N type substrate 1 is n-InP, N type under-clad layer 2 is n-InP, limiting layer 3 is AlGaInAs respectively down, Multiple Quantum Well active area 4 is AlGaInAs, last limiting layer 5 respectively is AlGaInAs, and P type top covering 6 is p-InP, and corrosion cutoff layer 7 is InGaAsP, light limiting layer 8 is p-InP, and ohmic contact layer 9 is the highly doped ingaas layer (P of P type
+-InGaAs), dielectric insulation layer 10 is SiO
2, Si
3N
4Or SiO
xN
y, the 11st, polymer, P type electrode layer 12 is Ti/Pt/Au, and N type electrode layer 13 is Ti/Pt/Au or Ti/Au, and 14 is high anti-reflection multilayer optical media coatings among Fig. 2.
Multiple Quantum Well active area 4 wherein is made up of many quantum well is built, and 4a is a trap wherein, and 4b is base wherein, as shown in Figure 4.The thickness of trap is 5nm-10nm, the active area gross thickness is between the 10-500nm, the light emission wavelength be 1.25 μ m between the 1.65 μ m, trap is built and to be strain structure, dependent variable is between-1.5% to+1.5%, and the trap base also can be the no strain structure of mating with substrate in addition.
The concrete flow process of making is as follows:
As shown in Figure 3: at first use MOCVD epitaxial growth 2N type under-clad layer n-InP at 1N type substrate n-InP, 3 times difference limiting layer AlGaInAs, 4 Multiple Quantum Well active areas, difference limiting layer AlGaInAs on 5,6P type top covering p-InP, 7 corrosion cutoff layer InGaAsP, 8 light limiting layer p-InP, 9 ohmic contact layer P
+-InGaAs.
Make mask then with photoresist on epitaxial wafer, erode away the shape ridge waveguide of falling from power with corrosive liquid, corrosion stops at InGaAsP corrosion cutoff layer 7.Wherein the angle theta of wave guide direction and SLED light output end is a 75-85 ° of degree, as shown in Figure 2.The somatomedin insulating barrier is left electrode window through ray, as shown in Figure 5 subsequently then.Do the plane with polymer at last and bury, the back is at p face sputter 12P type electrode layer Ti/Pt/Au, at n face sputter 13N type electrode layer Ti/Pt/Au or Ti/Au, at last in exiting surface two ends plating 10 about chip thinning to 100 micron
-3～10
-4The high anti-reflection multilayer optical deielectric-coating 14 of reflectivity.
In addition, propose in the present invention and can also saturatedly go out luminous power by what remove that bound preparative layer 3,5 improves device.
Claims (5)
1. Multiple Quantum Well super-radiance light emitting diode, adopting active area is the material of strained multiple-quantum-well structure, it is characterized in that adopting Al-Ga-In-As/indium phosphorus AlGaInAs/InP material, the emission wavelength scope of active area is that 1.25 μ m are to 1.65 μ m, specifically be included on the n type indium phosphorus InP substrate under-clad layer is arranged successively, limiting layer and be positioned at wherein Multiple Quantum Well active area respectively up and down, wherein the thickness of trap is 5-10nm, the gross thickness that the active region trap is built is 10-500nm, on upper limiting layer, be followed successively by top covering, corrosion cutoff layer, light limiting layer, ohmic contact layer and electrode, the light limiting layer central area constitutes waveguiding structure.
2. Multiple Quantum Well super-radiance light emitting diode according to claim 1 is characterized in that adopting the shape ridge waveguide structure of falling from power, and the shape ridge waveguide both sides of falling from power are polymer plane buried layers, are plane electrode on it.
3. Multiple Quantum Well super-radiance light emitting diode according to claim 1 and 2 is characterized in that wherein the angle theta of wave guide direction and super-radiance light emitting diode SLED light output end is a 75-85 ° of degree.
4. Multiple Quantum Well super-radiance light emitting diode according to claim 1 and 2 is characterized in that two bright dipping end faces plating 10
-3～10
-4The high anti-reflection multilayer optical deielectric-coating of reflectivity.
5. Multiple Quantum Well super-radiance light emitting diode according to claim 1 and 2 is characterized in that the Multiple Quantum Well active area has 4～10 pairs of traps to build.
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| CNB03128017XA CN100367586C (en) | 2003-05-23 | 2003-05-23 | Al-Ga-In-As multi-quantum sink super radiation luminous diode |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432715A (en) * | 2005-11-25 | 2007-05-30 | Sharp Kk | Nitride semiconductor light emitting devices |
| CN100426606C (en) * | 2005-05-27 | 2008-10-15 | 中国科学院半导体研究所 | Manufacturing aluminium indium gallium arsenide buried ridge waveguide laser and method using narrow plate selection epitaxial technology and method |
| CN101540358B (en) * | 2008-03-19 | 2012-05-30 | 中国科学院半导体研究所 | Manufacturing method of wide-spectrum high-power semiconductor superradiance LED |
| CN102683519A (en) * | 2012-05-31 | 2012-09-19 | 武汉光迅科技股份有限公司 | Manufacturing method of wide-spectrum semiconductor super-radiation light-emitting diode |
| CN104051602A (en) * | 2014-06-30 | 2014-09-17 | 重庆大学 | Ridge waveguide structure and superradiance light-emitting diode |
| CN106159673A (en) * | 2016-08-24 | 2016-11-23 | 陜西源杰半导体技术有限公司 | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power |
| CN109687288A (en) * | 2019-03-01 | 2019-04-26 | 厦门乾照半导体科技有限公司 | A kind of high density VCSEL array structure and preparation method thereof |
| WO2020134429A1 (en) * | 2018-12-28 | 2020-07-02 | 南京邮电大学 | Integrated homogeneous infrared photonic chip and manufacturing method therefor |
| CN113644550A (en) * | 2021-07-06 | 2021-11-12 | 武汉光迅科技股份有限公司 | Semiconductor light emitting device and method of manufacturing the same |
Family Cites Families (3)
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| JPH07202260A (en) * | 1993-12-27 | 1995-08-04 | Furukawa Electric Co Ltd:The | Distortion superlattice light emitting element |
| JPH09232625A (en) * | 1996-02-27 | 1997-09-05 | Oki Electric Ind Co Ltd | Side light-emitting optical semiconductor element and manufacture thereof |
| GB2312783B (en) * | 1996-05-01 | 2000-12-13 | Epitaxial Products Internat Lt | Opto-electronic device with transparent high lateral conductivity current spreading layer |
-
2003
- 2003-05-23 CN CNB03128017XA patent/CN100367586C/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100426606C (en) * | 2005-05-27 | 2008-10-15 | 中国科学院半导体研究所 | Manufacturing aluminium indium gallium arsenide buried ridge waveguide laser and method using narrow plate selection epitaxial technology and method |
| GB2432715A (en) * | 2005-11-25 | 2007-05-30 | Sharp Kk | Nitride semiconductor light emitting devices |
| CN101540358B (en) * | 2008-03-19 | 2012-05-30 | 中国科学院半导体研究所 | Manufacturing method of wide-spectrum high-power semiconductor superradiance LED |
| CN102683519A (en) * | 2012-05-31 | 2012-09-19 | 武汉光迅科技股份有限公司 | Manufacturing method of wide-spectrum semiconductor super-radiation light-emitting diode |
| CN102683519B (en) * | 2012-05-31 | 2015-04-01 | 武汉光迅科技股份有限公司 | Manufacturing method of wide-spectrum semiconductor super-radiation light-emitting diode |
| CN104051602A (en) * | 2014-06-30 | 2014-09-17 | 重庆大学 | Ridge waveguide structure and superradiance light-emitting diode |
| CN104051602B (en) * | 2014-06-30 | 2017-03-01 | 重庆大学 | A kind of ridged waveguide structure and super-radiance light emitting diode |
| CN106159673A (en) * | 2016-08-24 | 2016-11-23 | 陜西源杰半导体技术有限公司 | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power |
| WO2020134429A1 (en) * | 2018-12-28 | 2020-07-02 | 南京邮电大学 | Integrated homogeneous infrared photonic chip and manufacturing method therefor |
| JP7182814B2 (en) | 2018-12-28 | 2022-12-05 | 南京郵電大学 | Homo-integrated infrared photonic chip and its manufacturing method |
| CN109687288A (en) * | 2019-03-01 | 2019-04-26 | 厦门乾照半导体科技有限公司 | A kind of high density VCSEL array structure and preparation method thereof |
| CN113644550A (en) * | 2021-07-06 | 2021-11-12 | 武汉光迅科技股份有限公司 | Semiconductor light emitting device and method of manufacturing the same |
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