CN1396645A - Dual-mask CMP technology for eliminating influence of silicon cone phenomenon - Google Patents
Dual-mask CMP technology for eliminating influence of silicon cone phenomenon Download PDFInfo
- Publication number
- CN1396645A CN1396645A CN 02112147 CN02112147A CN1396645A CN 1396645 A CN1396645 A CN 1396645A CN 02112147 CN02112147 CN 02112147 CN 02112147 A CN02112147 A CN 02112147A CN 1396645 A CN1396645 A CN 1396645A
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- Prior art keywords
- hard mask
- technology
- mask
- silicon
- cmp
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Abstract
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Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021121478A CN1182576C (en) | 2002-06-20 | 2002-06-20 | Dual-mask CMP technology for eliminating influence of silicon cone phenomenon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021121478A CN1182576C (en) | 2002-06-20 | 2002-06-20 | Dual-mask CMP technology for eliminating influence of silicon cone phenomenon |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1396645A true CN1396645A (en) | 2003-02-12 |
CN1182576C CN1182576C (en) | 2004-12-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021121478A Expired - Fee Related CN1182576C (en) | 2002-06-20 | 2002-06-20 | Dual-mask CMP technology for eliminating influence of silicon cone phenomenon |
Country Status (1)
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CN (1) | CN1182576C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327503C (en) * | 2004-09-08 | 2007-07-18 | 上海宏力半导体制造有限公司 | Improvement for shallow slot separated structure height homogeneity |
CN101447424B (en) * | 2007-11-27 | 2010-11-03 | 上海华虹Nec电子有限公司 | Manufacturing method of STI structure |
-
2002
- 2002-06-20 CN CNB021121478A patent/CN1182576C/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327503C (en) * | 2004-09-08 | 2007-07-18 | 上海宏力半导体制造有限公司 | Improvement for shallow slot separated structure height homogeneity |
CN101447424B (en) * | 2007-11-27 | 2010-11-03 | 上海华虹Nec电子有限公司 | Manufacturing method of STI structure |
Also Published As
Publication number | Publication date |
---|---|
CN1182576C (en) | 2004-12-29 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; SHANGHAI IC R Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Co-patentee after: Shanghai integrated circuit research and Development Center Co., Ltd. Patentee after: Shanghai Huahong (Group) Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Patentee before: Shanghai Huahong (Group) Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041229 Termination date: 20140620 |
|
EXPY | Termination of patent right or utility model |