CN1388595A - LED element with opposite electrodes and its making process - Google Patents
LED element with opposite electrodes and its making process Download PDFInfo
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- CN1388595A CN1388595A CN 01121108 CN01121108A CN1388595A CN 1388595 A CN1388595 A CN 1388595A CN 01121108 CN01121108 CN 01121108 CN 01121108 A CN01121108 A CN 01121108A CN 1388595 A CN1388595 A CN 1388595A
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Abstract
The present invention is LED element with opposite electrodes and its making process. The present invention features that one crystal chip is divided into several crystal grain areas and in each crystal grain area two ohmic contact metal electrodes are formed in opposite sides to form opposite electrodes. The present invention can results in the effects of homogeneously distributed current, increased light emitting area and raised light emitting efficiency.
Description
The present invention relates to a kind of light-emitting diode and manufacture method thereof.
Widely the employed gallium nitride blue-green light LED of industry has very many application at present, for example indicating device, display, traffic signal light etc., and itself and the combination of red, green LED, can form color monitor, or white light emitting diode, and the potentiality that replace illuminating lamp are arranged gradually.In addition, blue green light and white light emitting diode are also available as display backlight plate light source, and as PC, mobile telephone mobile phone backlight light source, its coml potentiality are infinite.
As shown in Figure 1, electrode configuration schematic diagram for general light-emitting diode 7, its p type and n type electrode 71,72 are located at the place, diagonal angle of its luminous zone 73 respectively, make by p type electrode 71 and feed electric current, when arriving n type electrode 72 through luminous zone 73, it is luminous to order about luminous zone 73, and this is the principle of luminosity of light-emitting diode.
Yet, electric current selects shortest path and resistance characteristic than small path because having, therefore, as shown in Figure 1, usually at 7 liang of electrodes 71 of light-emitting diode, 72 is the highest apart from the shortest local current density, and distance is when long more, electric current is then more little, therefore, caused electric current to concentrate on luminous zone 73 zone lines mostly, depart from the few more phenomenon of zone line electric current more, so that 73 fringe region is close in the luminous zone does not have current flowing, and have electric current stream less than dead angle (being fringe region), make luminous zone 73 can't whole complete (efficiently) luminous, and, because current concentration can make luminous zone 73 overheated in the subregion of current concentration, the useful life that not only influences whole lighting efficiency and reduce light-emitting diode.
Therefore, use for meeting above-mentioned coml, light-emitting diode possesses high efficiency, long-life characteristic is necessary requirement, and desires the requirement that reaches such, then must satisfy two conditions: (1) flow through electric current of its luminous zone must be dispersed on the whole luminous zone.(2) there is not electric current stream on the luminous zone less than, non-luminous dead angle.And to satisfy this two condition, and it is essential improved that many technology are arranged, wherein, the electrode design on LED crystal particle is one of technology of most critical with arranging.
The object of the present invention is to provide a kind of light-emitting diode and manufacture method thereof, evenly distribute, increase light-emitting area and promote effects such as luminous efficiency to reach electric current with opposite side electrode.
According to above-mentioned purpose, the manufacture method of light-emitting diode according to an aspect of the present invention with opposite side electrode, be characterized in, described method comprises: (1) provides a wafer, form one first conductive-type semiconductor region thereon, and second conductive-type semiconductor region that on described first conductive-type semiconductor region, forms; (2) use the first road light shield several first contact zones of etching on described wafer, and each described first contact zone comprises that one first strip electrode district and is located at the first routing district of the arbitrary position of the first strip electrode district; (3) use of planning and the isolation of the second road light shield in the enterprising line number of a wafer grained region, make and comprise first an above-mentioned contact zone in each grained region, and the first strip electrode district that makes described first contact zone is along described grained region one side setting, and makes the described first routing district be positioned at arbitrary position of described side; (4) use the 3rd road light shield, plating one first ohmic metal contact electrode in first contact zone of each grained region; And (5) use the 4th road light shield, another side with the described first contact zone opposite side along each grained region plates one second ohmic metal contact electrode, and make the described second ohmic metal contact electrode comprise that the first strip electrode body of the one and first ohmic metal contact electrode forms the second strip electrode district of opposite side and symmetry, and steps such as the second routing district of being located at the arbitrary position of the described second strip electrode district.
In addition, the light-emitting diode with opposite side electrode according to a further aspect of the invention is characterized in including an insulated substrate, one first ohmic metal contact electrode and one second ohmic metal contact electrode; Wherein, be formed with first contact zone on other zone except above-mentioned second conductive-type semiconductor region that second conductive-type semiconductor region and on the subregion that one first conductive-type semiconductor region, is formed at first conductive-type semiconductor region is formed at first conductive-type semiconductor region on the described insulated substrate, and described first contact zone comprises that one is located at the first routing district of the arbitrary position of the first strip electrode district along the first strip electrode district and of insulated substrate one side setting; And the described first ohmic metal contact electrode is to be plated on first contact zone of above-mentioned insulated substrate.The described second ohmic metal contact electrode is to be plated on second conductive-type semiconductor region of above-mentioned insulated substrate, and it comprises that one is located at the second routing district of the arbitrary position of the second strip electrode district along the second strip electrode district and with the described side setting first contact zone opposite side insulated substrate.
Adopt such scheme of the present invention, can on each described grained region, form the opposite side electrode, evenly distribute, increase the crystal grain light-emitting area at grain surface and promote effects such as luminous efficiency and reach electric current.
Be clearer understanding purpose of the present invention, characteristics and advantage, light emitting diode element and the manufacture method thereof that the present invention has the opposite side electrode be elaborated below by most preferred embodiment and accompanying drawing, in the accompanying drawing:
Figure 1 shows that a kind of electrode of light-emitting diode was arranged schematic diagram in the past;
Figure 2 shows that the present invention has the light shield sequential schematic of using in the technology of a preferred embodiment of manufacture method of light-emitting diode of opposite side electrode;
Figure 3 shows that the present invention has the section bedded structure schematic diagram of light-emitting diode of a preferred embodiment of the light-emitting diode of opposite side electrode;
Figure 4 shows that the opposite side electrode of light-emitting diode of a preferred embodiment that the present invention has a light-emitting diode of opposite side electrode is provided with layout plan; And
Fig. 5 is presented at the interelectrode CURRENT DISTRIBUTION state of opposite side of light-emitting diode of a preferred embodiment that the present invention has the light-emitting diode of opposite side electrode.
See also Fig. 2 and shown in Figure 3, be the process schematic representation and the section bedded structure figure of a preferred embodiment of the present invention, the manufacture method that present embodiment has the light-emitting diode of opposite side electrode comprises the following step in regular turn:
(1) provides a wafer 10, it is the insulating properties substrate an of alundum (Al or magnesium oxide and so on, and is formed at its multiple quantum trap layer 13 between the two in be formed with second conductive-type semiconductor region 12 (being a p type gallium nitride semiconductor zone) and that one first conductive-type semiconductor region 11 (being a n type gallium nitride semiconductor zone), is formed on first conductive-type semiconductor region 11 on the wafer 10 in present embodiment in present embodiment; And for increasing the conduction and the luminous efficiency of light-emitting diode, at first, in wafer 10 surperficial evaporation one ohmic metal contact membranes 14, it is to be a p type ohmic metal contact membrane in present embodiment, generally be to use nickel or transparent metal, as indium tin oxide (ITO), and its thickness is about 100A, and the light-permeable rate reaches 90%.
(2) use one first road light shield 2, several first contact zones 21 of etching on above-mentioned wafer 10, as shown in Figure 3, be by after the wafer 10 surface etchings downwards, remove part second conductivity type (p type) semiconductor regions 12 and multiple quantum trap layer 13, first conductivity type (n type) semiconductor regions 11 of bottom is exposed, and as shown in Figure 2, each described first contact zone 21 is to be made of the first routing district 211 that one first strip electrode district 212 and is located at the described first strip electrode district 212 arbitrary positions (for example shown in Figure 2, the first strip electrode district, 212 1 ends).
(3) as shown in Figure 2, use one second road light shield 3, on above-mentioned wafer 10, carry out the etching of crystal grain and intercrystalline isolated area, with planning and the isolation of carrying out several grained region 31, and convenient follow-up crystal grain cutting.And include first an above-mentioned contact zone 21 in each grained region 31 that the second road light shield 3 is cooked up on wafer 10, and make of a side 312 settings of the first strip electrode district 212 of described first contact zone 21 along grained region 31, and make the described first routing district 211 be positioned at a corner 311 of grained region 31.
(4) use one the 3rd road light shield 4 and start technology (lift-off), evaporation one first ohmic metal contact electrode 41 in first contact zone 21 of each grained region 31 on wafer 10, it is for a n type electrode in the present embodiment, generally is to use titanium or aluminum metal; Therefore, 41 of the first ohmic metal contact electrodes that are formed on first contact zone 21 have the first routing district 411 that first strip shaped electric poles 412 and that is positioned at grained region 31 1 sides 312 is positioned at grained region 31 1 corners 311; And
(5) use the 4th road light shield 5 and start technology (lift-off), as shown in Figure 2, make in each grained region 31, evaporation one second ohmic metal contact electrode 51 is gone up in other zone except first contact zone 21, it comprises one along second strip shaped electric poles 512 grained region 31 and another sides 314 settings first contact zone, 21 opposite side, and one (for example be formed at second strip shaped electric poles, 512 arbitrary positions, at an end of second strip shaped electric poles 512 and be positioned at grained region 31 another corners 313) the second routing district 511, make that the described first routing district 411 and the second routing district 511 are the diagonal position that is positioned at grained region 31 in the present embodiment, and the described second ohmic metal contact electrode 51 is the p type electrode for a use titanium or aluminum metal evaporation in the present embodiment.
Therefore, through above-mentioned processing step, all formed the opposite side electrodes that are provided with along 31 liang of relative edges 312 of grained region and 314 in each grained region 31 on wafer 10, as shown in Figure 4, i.e. the first ohmic metal contact electrode 41 and the second ohmic metal contact electrode 51.
In addition, please in the lump with reference to Fig. 2 and shown in Figure 3, be the dispersion effect of increase by the electric current of the second routing district, 511 inflows of the second ohmic metal contact electrode 51, can be before the 4th road light shield 5, use one the 5th road light shield 6, design an insulation layer 61, the second routing district 511 and second conductive-type semiconductor region, 12 parts of the second ohmic metal contact electrode 51 are isolated, so that electric current is not concentrated in the middle of the second routing district 511, and can be dispersed to rapidly on second strip shaped electric poles 512, and electric current can be dispersed on the whole luminous zone 15, and thereby the effect of produce saving electric current by second strip shaped electric poles 512.
Therefore, adopt above-mentioned technology, the luminescent diode component grained region 31 that forms on wafer 10 as shown in Figure 4, is formed with opposite side electrode 41,51 in each grained region 31.Then, through the wafer cutting process, promptly obtain light-emitting diode 1 as shown in Figure 5, its interior layer columnar structure then reaches shown in Figure 3 as described above, it from bottom to top includes an insulated substrate (being the part of wafer 10), one first conductive-type semiconductor region 11, a multiple quantum trap layer 13, one second conductive-type semiconductor region 12, an ohmic metal contact membrane 14, and be located at opposite side electrode 41 and 51 etc. on first conductive-type semiconductor region 11 and second conductive-type semiconductor region 12 respectively, do not add in this and give unnecessary details.And owing to be located at first (n type) ohmic metal contact electrode 41 and second (p type) ohmic metal contact electrode 51 on the luminous zone 15 of light-emitting diode 1 are opposite side electrodes for the geometric position symmetry, therefore the CURRENT DISTRIBUTION that therebetween flows can be even in the extreme, and because two electrodes 41,51 distance is almost equal, make that the flow through resistance in all paths therebetween of electric current is almost equal, then all paths that flow to the power line of the first ohmic metal contact electrode 41 by the second ohmic metal contact electrode 51 all equate and reach the shortest, thereby do not have a zone of current crowding, do not have yet electric current stream less than the dead angle, so, by above-mentioned opposite side electrode 41,51 design can make the light-emitting area increase of light emitting diode element 1 really and make its luminous efficiency reach maximum.
Comprehensively above-mentioned, light-emitting diode and manufacture method thereof that the present invention has the opposite side electrode have following advantage:
(1) because electric current flows into and is dispersed to rapidly its second strip shaped electric poles 512 by the second routing district 511 of the second ohmic metal contact electrode 51 of light-emitting diode 1, and when making electric current on average flow to the first ohmic metal contact electrode 41 dispersedly by second strip shaped electric poles 512, can come by 15 uniformly dispersings in the luminous zone, make full use of the everywhere light-emitting area of luminous zone 15, and can under same chip area, increase luminous area.
(2) because electric current can come at the luminous zone of light-emitting diode 1 15 uniformly dispersings, it is partly regional overheated can not allow current concentration cause, so can increase the luminous efficiency and the luminosity of light-emitting diode 1.
(3) can come at the luminous zone of light-emitting diode 1 15 uniformly dispersings owing to electric current, partly the zone is not overheated because of current concentration makes, so can increase the drive current of light-emitting diode 1, so that more high brightness to be provided, and can improve the breakdown voltage of light-emitting diode 1.
(4) because electric current can come at the luminous zone of light-emitting diode 1 15 uniformly dispersings, partly the zone is not overheated because of current concentration makes, and can improve its useful life and reliability.
(5) because electric current can come at the luminous zone of light-emitting diode 1 15 uniformly dispersings, whole lighting efficiency is improved, have more province and electrically reach competitiveness.
Claims (14)
1. manufacture method with light-emitting diode of opposite side electrode, it is characterized in that: described method comprises the following steps:
(1) provide a wafer, be formed with one first conductive-type semiconductor region on it, and one second conductive-type semiconductor region that on described first conductive-type semiconductor region, forms;
(2) use the first road light shield, several first contact zones of etching on above-mentioned wafer, and each described first contact zone comprises that one first strip electrode district and is located at the first routing district of the arbitrary position of the described first strip electrode district;
(3) use the second road light shield, planning and isolation in the enterprising line number of a wafer grained region, make each grained region include the first above-mentioned contact zone respectively, and make of the side setting of the first strip electrode district of described first contact zone along grained region, and make the described first routing district be positioned at arbitrary position of described side;
(4) use the 3rd road light shield, in first contact zone of each grained region, plate one first ohmic metal contact electrode; And
(5) use the 4th road light shield, make along another side of each grained region and plate one second ohmic metal contact electrode with the first contact zone opposite side, wherein, the described second ohmic metal contact electrode comprises that one forms the second strip electrode district of opposite side and symmetry with the first strip electrode district of the above-mentioned first ohmic metal contact electrode, and second a routing district that is located at the arbitrary position of the described second strip electrode district.
2. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
In step (2) and (3), the described first routing district is located at an end of the described first strip electrode district and the corner that is positioned at described grained region.
3. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
In step (5), the described second routing district is located at an end of the described second strip electrode district and another corner of being positioned at described grained region.
4. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
In step (2) before, in advance prior to described wafer surface evaporation one second ohmic metal contact membrane, to increase electrical efficiency.
5. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
In step (5) before, additionally use one the 5th road light shield, the second routing district and second conductive-type semiconductor region of the second ohmic metal contact electrode partly isolated, with increase flow through the second routing district electric current dispersion effect and can save electric current.
6. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
Described wafer is the insulating properties substrate of alundum (Al or magnesium oxide and so on.
7. have the manufacture method of the light-emitting diode of opposite side electrode according to claim 1, it is characterized in that:
Described first conductive-type semiconductor region is to be n type gallium nitride semiconductor zone, and described second conductive-type semiconductor region is to be p type gallium nitride semiconductor zone.
8. light-emitting diode with opposite side electrode, it is characterized in that: described light-emitting diode comprises:
One insulated substrate, be formed with second conductive-type semiconductor region on the subregion that one first conductive-type semiconductor region, is formed at first conductive-type semiconductor region, and first contact zone that is formed on other zone except above-mentioned second conductive-type semiconductor region of first conductive-type semiconductor region on it, described first contact zone comprises that one is located at the first routing district of the arbitrary position of the described first strip electrode district along the first strip electrode district and of insulated substrate one side setting;
One first ohmic metal contact electrode is plated on first contact zone of above-mentioned insulated substrate; And
One second ohmic metal contact electrode is plated on second conductive-type semiconductor region of above-mentioned insulated substrate, and it comprises that one is located at the second routing district of the arbitrary position of the second strip electrode district along the second strip electrode district and with another side setting first contact zone opposite side insulated substrate.
9. as having the light-emitting diode of opposite side electrode as described in the claim 8, it is characterized in that:
The first routing district of described first contact zone is provided in a side of an end of the described first strip electrode district and is positioned at a corner of described insulated substrate.
10. as having the light-emitting diode of opposite side electrode as described in the claim 8, it is characterized in that:
The second routing district of the described second ohmic metal contact electrode is provided in a side of an end of the described second strip electrode district and is positioned at another corner of described insulated substrate.
11. as having the light-emitting diode of opposite side electrode as described in the claim 8, it is characterized in that: before plating the second ohmic metal contact electrode, on second conductive-type semiconductor region of insulated substrate, be coated with an ohmic metal contact membrane in advance, to increase electrical efficiency.
12., it is characterized in that as having the light-emitting diode of opposite side electrode as described in the claim 8:
The bottom, the second routing district of the described second ohmic metal contact electrode is partly isolated with second conductive-type semiconductor region.
13., it is characterized in that as having the light-emitting diode of opposite side electrode as described in the claim 8:
Described insulated substrate is the insulating properties substrate for alundum (Al or magnesium oxide class.
14., it is characterized in that as having the light-emitting diode of opposite side electrode as described in the claim 8:
Described first conductive-type semiconductor region is to be n type gallium nitride semiconductor zone, and described second conductive-type semiconductor region is to be p type gallium nitride semiconductor zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01121108 CN1238908C (en) | 2001-05-30 | 2001-05-30 | LED element with opposite electrodes and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01121108 CN1238908C (en) | 2001-05-30 | 2001-05-30 | LED element with opposite electrodes and its making process |
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| Publication Number | Publication Date |
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| CN1388595A true CN1388595A (en) | 2003-01-01 |
| CN1238908C CN1238908C (en) | 2006-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 01121108 Expired - Fee Related CN1238908C (en) | 2001-05-30 | 2001-05-30 | LED element with opposite electrodes and its making process |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420051C (en) * | 2005-03-30 | 2008-09-17 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| CN101859824A (en) * | 2009-04-07 | 2010-10-13 | 山东璨圆光电科技有限公司 | Light-emitting diode chip with dual-loop electrode design |
| CN113492592A (en) * | 2020-03-20 | 2021-10-12 | 研能科技股份有限公司 | Method for manufacturing long and narrow ink jet head chip |
| WO2023115325A1 (en) * | 2021-12-21 | 2023-06-29 | 联嘉光电股份有限公司 | Small-sized vertical light-emitting diode die having high luminous efficiency |
| US12005711B2 (en) | 2020-03-20 | 2024-06-11 | Microjet Technology Co., Ltd. | Manufacturing method of narrow type inkjet print head chip |
-
2001
- 2001-05-30 CN CN 01121108 patent/CN1238908C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420051C (en) * | 2005-03-30 | 2008-09-17 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| CN101859824A (en) * | 2009-04-07 | 2010-10-13 | 山东璨圆光电科技有限公司 | Light-emitting diode chip with dual-loop electrode design |
| CN113492592A (en) * | 2020-03-20 | 2021-10-12 | 研能科技股份有限公司 | Method for manufacturing long and narrow ink jet head chip |
| CN113492592B (en) * | 2020-03-20 | 2022-09-20 | 研能科技股份有限公司 | Method for manufacturing long and narrow ink jet head chip |
| US12005711B2 (en) | 2020-03-20 | 2024-06-11 | Microjet Technology Co., Ltd. | Manufacturing method of narrow type inkjet print head chip |
| WO2023115325A1 (en) * | 2021-12-21 | 2023-06-29 | 联嘉光电股份有限公司 | Small-sized vertical light-emitting diode die having high luminous efficiency |
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| Publication number | Publication date |
|---|---|
| CN1238908C (en) | 2006-01-25 |
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