CN1379074A - Composition for grinding and manufacturing method of storage hard disk using said composition - Google Patents
Composition for grinding and manufacturing method of storage hard disk using said composition Download PDFInfo
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- CN1379074A CN1379074A CN 02107700 CN02107700A CN1379074A CN 1379074 A CN1379074 A CN 1379074A CN 02107700 CN02107700 CN 02107700 CN 02107700 A CN02107700 A CN 02107700A CN 1379074 A CN1379074 A CN 1379074A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention provides a polishing composition having a high polishing rate and capable of inhibiting generation of scratches and reducing surface roughness. The polishing composition for a memory hard disk comprises water, silicon dioxide, an oxidizing agent and at least one organic acid selected from the group consisting of malic acid, maleic acid, lactic acid, acetic acid, citric acid, succinic acid, malonic acid, glycolic acid, adipic acid, ascorbic acid, itaconic acid, iminodiacetic acid, glyoxylic acid, formic acid, acrylic acid, crotonic acid, nicotinic acid, citraconic acid and tartaric acid, has a pH of at least 1 but less than 7 and is substantially free from a metallic ion. The manufacturing method of a memory hard disk comprises using the same.
Description
Technical field
The present invention relates to making the storage hard disk, when promptly being used for the basal disc of memory storage disk such as computer, being applicable to and grinding its surperficial composition for polishing.Relate to more specifically that to be used for Ni-P dish, Ni-Fe dish, norbide dish and carbon dish etc. be the composition for polishing of manufacturing of the storage hard disk of representative.Be particularly related to and be applicable to the composition for polishing that can obtain good precision machined surface manufacturing technology.In addition, the invention still further relates to manufacture method by the storage hard disk of the high-capacity disk device that uses aforementioned abrasive composition to obtain to be applicable to have high record density.
Background technology
In recent years, along with the miniaturization and the high performance of computer, require also to realize miniaturization and high capacity that the area recording density of storage hard disk all just improves with the ratio of tens of % every year as the disk set of memory storage and the storage hard disk that is used for this device.
Because it is more and more littler that the specified amount recorded information accounts for the space of storage on the hard disk, a little less than writing down necessary magnetic force and becoming more and more.Therefore, up-to-date disk set must dwindle the distance between magnetic head that information is read and write and storage hard disk, and the distance between magnetic head and hard disk has reached below 1.0 microinchs (about 0.025 μ m) at present.
If there be projection and the groove that surpasses certain size in the very fast storage harddisk surface of rotating speed, the phenomenon that the magnetic head breakage then can occur, because it is impaired to cause storing the magnetic medium and the magnetic head of harddisk surface, there be projection and the groove that surpasses certain size so must prevent to store harddisk surface.
Be the substrate that on sheet material, has formed non-electrolysis Ni-P plated film by the most widely used storage hard disk with basal disc (hereinafter referred to as " substrate ") at present.Above-mentioned sheet material must or adopt the PVA grinding stone that is made by the SiC abrasive substance to carry out attrition process or additive method by diamond wheel processing in order to reach smooth requirement, the substrate that is formed by aluminium and other materials is carried out shaping handle.
Generally, because magnetic head and storage hard disk absorption or the texture that makes substrate surface the certain orientation different with the sense of rotation of storage hard disk occur because of grinding cause storing the magnetic field heterogeneity on the hard disk, often carry out formation concentric circles texture on the substrate after so-called tissue (structure) processing makes grinding in order to prevent.In recent years,, thin on-chip texture and slightly organize processing, perhaps also can use and not carry out organizing finished surface not have the non-process substrates of organizing of texture for further dwindling the distance of magnetic head and hard disk.
If the storage harddisk surface exist to surpass the depression that is called as scratch and pitting of certain depth and length, then this part just fully can't recorded information, causes that the information that is called as " point falls " is omitted and information writes down badly, causes the disk set mistake then.State before use under the situation of substrate manufacturing storage hard disk of non-tissue processing, even surface imperfection is very shallow also can go wrong for above-mentioned scratch and pitting etc.Even use process tissue is processed or is slightly organized under the situation of the substrate of processing, if can not then often also above-mentioned situation can occur by above-mentioned processing means with scratch and pitting Ex-all.
Therefore, at grinding steps, promptly form in the step before the magnetic medium, the rugosity of substrate surface is controlled at minimum, realize higher planarization and smoothness, the appearance that prevents scratch, pitting, microspike and other surface imperfection is very important.
In the past, the general composition for polishing that comprises aluminum oxide or other various abrasive substances, water and various grinding promotor (below, be called " slurry " according to its proterties) that uses carried out attrition process 1 time to substrate.But, in 1 process of lapping, be difficult to remove surface imperfection and grooves such as bigger projection of substrate surface and pitting, and can not make surface roughness reach minimum within a certain period of time.Therefore, people carry out grinding technics more than 2 times in discussion.
When carrying out the attrition process of 2 steps, the main purpose of the 1st grinding is to remove projection and pitting etc. greatly surface imperfection and the grooves that substrate surface exists, and promptly improves planarization.Reduce with it surface roughness water as do not produce the 2nd smooth grinding the dark scratch that can't remove, therefore require composition for polishing that aforementioned surfaces defective and groove are had and process capability for correcting preferably.
The purpose that the 2nd grinding is smooth grinding is to make the surface roughness of substrate reach minimum.Therefore, this composition for polishing and its satisfy grind for the 1st time desired bigger surface imperfection and groove are had process capability for correcting preferably, if can not reduce surface roughness and improve smoothness, can prevent the generation of fine scratch and pitting, microspike or other surface imperfection.In addition, consider that it also is vital accelerating grinding rate from productivity.Surface roughness determines according to the manufacturing step of substrate, final entry capacity and other conditions of storage hard disk.Therefore, also can carry out attrition process more than 2 times according to desired surface roughness size.
In recent years, in order to reduce tooling cost, various improvement have been carried out to utilizing the PVA grinding stone that sheet material is carried out method for processing.Improve by these, reduced the surface roughness of sheet material, make qualities such as the surface roughness of the coated basal plate before grinding and groove reach level after in the past grinding for the 1st time.Process with regard to the 1st time of not needing to carry out in the past by this working method, as long as only carry out so-called smooth grinding processing.
In order to achieve the above object, particularly in the smooth grinding process, aluminum oxide or other abrasive substances thoroughly can be pulverized, then particle diameter is adjusted to suitable degree, add entry therein, add aluminum nitrate, various organic acid again and other grind promotor, modulate composition for polishing, or adopt the composition for polishing that contains colloid carbonic acid gas and water that substrate is ground.
But, under a kind of situation of composition for polishing, leave some room for improvement before using to having microspike and fine indenture aspect.And use under the situation of a kind of composition for polishing in back, then grinding rate, as the rolling and the smooth situation of the index in substrate surface hole and the aspects such as washing after grinding leave some room for improvement.
In order to solve foregoing problems, Japanese Patent is open have been disclosed for the flat 1-246068 of communique number to utilize organic acid that the pH value is adjusted to colloid carbonic acid gas solution below 8 as abrasive, simultaneously the single or double of aluminium alloy base plate is ground mirror processing method into the aluminium alloy base plate of feature.In addition, Japanese Patent has openly disclosed for the flat 2-185365 of communique number to use by organic acid the pH value has been adjusted to the Ginding process that the colloid carbonic acid gas solution below 8 grinds the aluminium alloy plectane that comprises Mg, Mn, Al and unavoidable impurities formation.
Japanese Patent has disclosed the composition that is used to grind the storage hard disk that contains abrasive substance and water open the flat 10-204416 of communique number, it is characterized in that iron containing compounds is molten to be stored in the said composition.Use this composition for polishing grinding rate fast, can obtain the less substrate of surface roughness.
The open manufacture method that has disclosed magnetic disc substrate for the flat 11-167711 of communique number of Japanese Patent, the feature of this method are to adopt the colloidal state abrasive that contains the salt of the above ferric ion of 0.01mol/l and contain the silicon dioxide granule of particle diameter below 0.5 μ m to grind.
The open communique 2000-42904 communique of Japanese Patent has disclosed the surface grinding slurry, the feature of this slurry is, the ligand that comprises liquid layer, abrasive and this contained element in surface, this ligand combines with the ion or the atom of various elements, and the ion or the atom of the various elements that are adsorbed on the surface can be effectively removed in this combination.
But according to the result of present inventor's research, the very difficult while is all satisfied generation, the corrosion that prevents shredder and damage and the good requirement of abrasive surface quality of grinding rate ideal, control scratch.
The announcement of invention
The invention solves the problems referred to above, promptly provide can realize in the past fast to the such grinding rate of composition for polishing requirement, can prevent the composition for polishing that scratch produces, surface roughness is little.
The feature of composition that is used to grind the storage hard disk that solves in the past the problem that exists of the present invention is, comprise water, silicon-dioxide, oxygenant reaches at least a kind and is selected from oxysuccinic acid, toxilic acid, lactic acid, acetate, citric acid, succsinic acid, fumaric acid, oxyacetic acid, hexanodioic acid, xitix, methylene-succinic acid, iminodiethanoic acid, oxoethanoic acid, formic acid, vinylformic acid, Ba Dousuan, nicotinic acid, citraconic acid and tartaric organic acid, the pH value of composition is more than 1 but less than 7, and do not contain metal ion in the composition in fact.
The feature of the manufacture method of storage hard disk of the present invention is with aforementioned composition for polishing the Ni-P dish of surface roughness Ra below 30 dusts to be ground.
The manufacture method of storage hard disk of the present invention possesses following feature, promptly carries out smooth grinding to carrying out the storage hard disk of 1 preparation lapped face rugosity Ra below 15 dusts in advance at least with substrate with aforementioned composition for polishing.
The grinding rate of the composition that is used to grind the storage hard disk of the present invention is very fast, can suppress scratch and produce, and can reduce surface roughness.
Utilize the manufacture method of storage hard disk of the present invention, can make with grinding rate faster and can suppress that scratch produces, the less storage hard disk of surface roughness.
Water
If do not contain metal ion in the composition for polishing of the present invention in fact, then also can use in process water, domestic use of water, ion exchanged water and the distilled water any, re-use but preferably will be in fact do not remove impurity after the ion-exchange water filtration of metal ion.Though composition for polishing of the present invention also can use the water that contains metal ion, the suitable means of essential in this case employing are for example removed metal ion by ion exchange method from final composition for polishing.
Metal among the present invention is meant the element of IA family, IIA family, IB～VIIB family and VIII family.
Abrasive substance
The feature of composition for polishing of the present invention is to contain silicon-dioxide as abrasive substance.Though silicon-dioxide comprises the multiple silicon-dioxide that colloid carbonic acid gas, gaseous state silicon-dioxide and other manufacture method and proterties are all different, best is the colloid carbonic acid gas.
The method of making the colloid carbonic acid gas comprise make water glass or potassium silicate through ion-exchange and the ultramicron colloid silica particle method of growing up; The method that organoalkoxysilane is hydrolyzed with acid or alkali; Or silicoorganic compound are carried out the method for wet type thermal degradation.
Can make colloid silica under the situation that concentration improves, also can keep its colloidal state by adding acid and/or alkali or the pH value of commercially available colloid silica being adjusted by ion-exchange.The high purity product that commercially available colloid silica has the simple grain dispersive, a plurality of particle bonded of certain proportion are arranged or the content of metallic impurity etc. is descended, composition for polishing of the present invention can use above-mentioned any colloid carbonic acid gas.
The particle diameter of silicon-dioxide is influential to the quality of grinding rate and abrasive surface.From keep enough grinding rates, fully reduce abrasive surface surface roughness, the generation of scratch be controlled at inferior limit consider, the silicon-dioxide median size of being obtained by the specific surface area that records with the BET method is generally 0.005～0.2 μ m, more preferably 0.01～0.1 μ m.
Dioxide-containing silica is different because of the difference of used silicon-dioxide kind.But, dispersed and keep suitable viscosity to consider that the content of silicon-dioxide is generally 1～40% of whole composition for polishing weight from the homogeneous of keeping enough grinding rates, composition, more preferably 1～20%.
Grind promotor
Composition for polishing of the present invention is a feature to contain oxygenant.This oxygenant is by being used in combination the effect of grinding promotor of playing with the aftermentioned organic acid.Best metal ion not in the oxygenant of the present invention.This oxygenant is preferably at least a kind that is selected from chloric acid, perchloric acid, sulfuric acid, persulfuric acid, nitric acid, peroxy-nitric acid, hydrogen peroxide, acid iodide and the Periodic acid, and good especially is hydrogen peroxide.Though it is also passable that oxygenant contains metal ion, in this case, must take appropriate means, for example from final composition for polishing, remove metal ion by ion exchange method etc.
Oxygenate content in the composition for polishing of the present invention is according to the difference of kind and different.But, from the chemical result that fully manifests oxygenant, keep enough grinding rates and prevent that the angle of scratch from considering, oxygenate content corresponding to the gross weight of composition for polishing generally more than 0.1%.If surpass certain content, then from increasing viewpoint that grinding rate can't improve along with oxygenant and producing oxygen storage receptacle distortion or disruptive viewpoint are considered from preventing that oxygenant because of surplus from decomposing, the content of oxygenant, is preferably in below 3% generally below 5% corresponding to the gross weight of composition for polishing.
The feature of composition for polishing of the present invention is to comprise at least a kind to be selected from oxysuccinic acid, toxilic acid, lactic acid, acetate, citric acid, succsinic acid, fumaric acid, oxyacetic acid, hexanodioic acid, xitix, methylene-succinic acid, iminodiethanoic acid, oxoethanoic acid, formic acid, vinylformic acid, Ba Dousuan, nicotinic acid, lemon enanthic acid and tartaric organic acid.These organic acids and aforementioned oxygenant are used in combination and can play the effect of grinding promotor.Good especially is is selected from least a in oxysuccinic acid, toxilic acid, lactic acid, methylene-succinic acid and the acetate.In addition, the organic acid salt that contains metal ion can make the silicon-dioxide as abrasive substance condense, and these agglutination particles often become the reason that produces scratch.
Organic acid content in the composition for polishing of the present invention is different and different according to kind.But, from fully manifesting the organic acid chemical result, keep enough grinding rates, prevent that the generation of scratch and economy aspect from considering that organic acid content is generally 0.01～10% corresponding to the gross weight of composition for polishing, more preferably 0.1～5%.
When modulating above-mentioned composition for polishing,, also can add various known additives according to the requirement on kind, processing conditions and other attrition process of machined object in order to reach the purpose that guarantees product quality and stabilization.
Composition for polishing
Generally, in water, sneak into silicon-dioxide, oxygenant and organic acid they are disperseed, dissolve other additives more as required and just can modulate composition for polishing of the present invention.The method that these compositions disperse or dissolve in water is arbitrarily.For example, can adopt turbine mixer to stir or disperse by the ultrasonic dispersing method.In addition, the interpolation of these compositions is arbitrarily in proper order, and is can first dispersing and dissolving any, also can carry out simultaneously.
Composition for polishing of the present invention can be adjusted its pH value according to the interpolation of various supplementary additives, but in order to manifest effect of the present invention, the pH value is reached more than 1 but less than 7.The pH value is reached more than 2 but less than 4.If the pH value of composition in this scope, then can obtain enough grinding rates and prevent corrosive effect such as shredder.Therefore, be lower than 1 or be higher than under 7 the situation, must adjust the pH value with alkali or acid in the pH of composition for polishing value.Preferably use the not alkali or the acid of metal ion this moment, final like this composition for polishing just can not contain metal ion.If contain metal ion in the raw material, then must adopt suitable means from composition for polishing, to remove these metal ions.
Metal ion not in fact in the composition for polishing of the present invention.The meaning that does not contain metal ion in fact is to allow the metal ion that can not have influence on effect of the present invention to exist.Specifically, the metal ion content in the composition for polishing of the present invention is generally below 500ppm, better below 50ppm.
, decompose during composition for polishing of the present invention in storage, composition for polishing can be divided into 2 parts or more part of composition state is taken care of in order to prevent oxygenant.For example, the slurry that can consider to contain abrasive substance, organic acid and water is modulated into the stoste of high density and takes care of, before be about to grinding or when diluting this stoste oxygenant is dissolved in wherein, obtain the composition for polishing that regulation is formed, if adopt this method, then can preserve for a long time with higher concentration.
Composition for polishing of the present invention can be modulated into the higher stoste of concentration earlier, storage or transportation then, and redilution uses when really carrying out attrition process.The ideal concentration scope of aforementioned various compositions is exactly actual concentration range when carrying out attrition process.When taking aforesaid method, the solution under storage or travel position has higher concentration.Consider that from angle easy to use composition for polishing is prepared as good with its enrichment stage.
Composition for polishing of the present invention is when substrate grinding, and the detailed mechanism of the reason that surface roughness reduces for making, grinding rate is accelerated to prevent that simultaneously scratch from producing is also not fully aware of, below is that example is inquired into the substrate with Ni-P plated film.
At first, the reason that surface roughness reduces about making, grinding rate is accelerated, can think because the Ni-P coated surface when being corroded by the organic acid chemical action because of after the chemical action oxidation of oxygenant becomes fragile, by the mechanical effect of white rouge particle, remove from the Ni-P surface at an easy rate with less unit.
About preventing that reason that scratch produces from can think in the composition for polishing of the present invention not metal ion, can not promote cause as the cohesion of the silicon-dioxide of abrasive substance.
The manufacture method of storage hard disk
The manufacture method of storage hard disk of the present invention is to adopt aforementioned composition for polishing that the storage hard disk is ground.
Substrate as the storage hard disk that grinds object comprises Ni-P dish, Ni-Fe dish, norbide dish, carbon dish etc.Wherein specially suitable is the Ni-P dish.
The manufacture method of storage hard disk of the present invention is not limited only to use aforementioned composition for polishing, the Ginding process and the grinding condition of any in the past storage hard disk of use still capable of being combined.
For example, can use single face shredder, two surface grindings and other shredders.In addition, polishing pad then can adopt imitative chamois leather type, non-woven type, flocking cloth type and fleece type etc.
Composition for polishing of the present invention because can make that surface roughness diminishes, grinding rate is accelerated, also can prevent the generation of scratch simultaneously, so the substrate that surface roughness Ra has been adjusted to below 30 dusts can carry out 1 grinding, also can carry out 2 times different grindings of grinding condition.When carrying out grinding for 2 times, the grinding steps that has used aforementioned composition for polishing is as final grinding steps, and promptly the most handy composition for polishing of the present invention grinds the substrate that ground in advance.In addition, grind in order more effectively to utilize composition for polishing of the present invention, the surface roughness of the pre-substrate that grinds of process is preferably in in the measuring method of optics surface roughness meter Ra being adjusted to below 15 dusts.
Below, to composition for polishing of the present invention and the storage hard disk manufacture method be specifically described with example.The present invention is not limited in the content of all examples of the following stated in being no more than the scope of its main points.
The modulation of composition for polishing
At first, in ion exchanged water, add colloid mixture silicon-dioxide (primary particle size is 0.035 μ m), oxygenant and organic acid according to the amount of Table 1 respectively, modulate the sample of embodiment 1～32 and comparative example 1～13.Working concentration is 31% aquae hydrogenii dioxidi, but content shown in the table 1 is the peroxidation hydrogen number.The pH value of each sample is as shown in table 1.
The grinding test making of substrate
Grind assessment in order to carry out 2 times, use aforementioned sample production substrate.Grinding condition is as described below.
Grinding condition (the 1st time)
The shredder twin grinder
Machined object 3.5 " non-electrolysis Ni-P substrate
Grind quantity (2/carrier) * 5 carriers * 2 batch=20
Composition for polishing DISKLITE-A3510 (FUJIMI Co., Ltd. system)
1: 2 ion exchanged water of the thinning ratio of composition for polishing
The feed rate 100cc/ of composition for polishing minute
Polishing pad Surfin 018-3 (FUJIMI Co., Ltd. system)
Tonnage 80g/cm
2
Chassis rotating speed 60rpm
Milling time 5 minutes
Grinding test
Then, use the foregoing description 1～32 and the sample of comparative example 1～13 and the substrate that the 1st time has been ground to carry out grinding test.Grinding condition is as described below.The surface roughness of substrate (Ra) is recorded as with optics surface roughness meter MicroXam[X50] (U.S. Phase Shift corporate system) measured value.
Grinding condition
The shredder twin grinder
Machined object 3.5 " non-electrolysis Ni-P substrate
(the 1st time ground surface roughness Ra be 12 dusts)
Grind quantity (2/carrier) * 5 carriers * 2 batch=20
Composition for polishing DISKLITE-A3510 (FUJIMI Co., Ltd. system)
Polishing pad BELLATRIX N0058
(Kanebo Co., Ltd. system)
Tonnage 100g/cm
2
Chassis rotating speed 40rpm
The thinning ratio stoste of composition for polishing
The feed rate 50cc/ of composition for polishing minute
Milling time 10 minutes
After the grinding, successively to substrate wash with drying after, measure to grind the reduction of mera weight.To all measuring, try to achieve grinding rate by its mean value through 20 substrates that grind.Evaluation criteria is as follows.
◎: more than the 0.1 μ m/min
Below zero: 0.05 above 0.01 μ m/min of μ m/min
*: below the 0.05 μ m/min
Then, the surface and the inner face of all substrates after dark indoor spot light lamp (hillside plot optics industry Co., Ltd. system, 500,000 luxs) visual inspection is ground are counted the scratch number, are tried to achieve the scratch number of each face by its mean value.The assessment benchmark is as described below.
◎: 10 places/below the face
20 places more than zero: 10 place/face/below the face
*: 20 places/more than the face
About grinding rate and to produce the assessment result of situation of scratch as shown in table 1.
Table 1
| Colloid carbon dioxide content (wt%) | Organic acid | Oxygenant | The pH value | Grinding rate | Scratch | |||
| Kind | Content (wt%) | Kind | Content (wt%) | |||||
| Embodiment 1 | ????1.3 | Oxysuccinic acid | ????0.5 | Hydrogen peroxide | ????1.6 | ??2.4 | ??◎ | ◎ |
| Embodiment 2 | ????4.5 | Oxysuccinic acid | ????0.5 | Hydrogen peroxide | ????1.6 | ??2.9 | ??◎ | ◎ |
| Embodiment 3 | ????8.8 | Oxysuccinic acid | ????0.5 | Hydrogen peroxide | ????1.6 | ??3.0 | ??◎ | ◎ |
| Embodiment 4 | ????4.5 | Oxysuccinic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.6 | ??◎ | ◎ |
| Embodiment 5 | ????4.5 | Oxysuccinic acid | ????0.5 | Hydrogen peroxide | ????0.6 | ??2.9 | ??◎ | ◎ |
| Embodiment 6 | ????4.5 | Oxysuccinic acid | ????0.5 | Hydrogen peroxide | ????0.2 | ??2.9 | ??◎ | ◎ |
| Embodiment 7 | ????4.5 | Toxilic acid | ????0.25 | Hydrogen peroxide | ????1.6 | ??2.3 | ??◎ | ◎ |
| Embodiment 8 | ????4.5 | Toxilic acid | ????0.5 | Hydrogen peroxide | ????1.6 | ??2.1 | ??◎ | ◎ |
| Embodiment 9 | ????8.8 | Toxilic acid | ????0.25 | Hydrogen peroxide | ????1.6 | ??2.4 | ??◎ | ◎ |
| Embodiment 10 | ????4.5 | Lactic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.7 | ??◎ | ◎ |
| Embodiment 11 | ????8.8 | Lactic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.8 | ??◎ | ◎ |
| Embodiment 12 | ????4.5 | Lactic acid | ????0.5 | Hydrogen peroxide | ????1.6 | ??3.0 | ??◎ | ◎ |
| Embodiment 13 | ????4.5 | Lactic acid | ????1.0 | Hydrogen peroxide | ????0.2 | ??2.7 | ??◎ | ◎ |
| Embodiment 14 | ????4.5 | Acetate | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.3 | ??◎ | ◎ |
| Embodiment 15 | ????8.8 | Acetate | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.4 | ??◎ | ◎ |
| Embodiment 16 | ????4.5 | Acetate | ????0.5 | Hydrogen peroxide | ????1.6 | ??3.0 | ??◎ | ◎ |
| Embodiment 17 | ????4.5 | Acetate | ????1.0 | Hydrogen peroxide | ????0.2 | ??3.3 | ??◎ | ◎ |
| Embodiment 18 | ????4.5 | Citric acid | ????1.0 | Hydrogen peroxide | ????0.3 | ??2.5 | ??◎ | ◎ |
| Embodiment 19 | ????4.5 | Citric acid | ????1.0 | Hydrogen peroxide | ????3.1 | ??2.6 | ??◎ | ○ |
| Embodiment 20 | ????8.8 | Citric acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.5 | ??◎ | ◎ |
| Embodiment 21 | ????4.5 | Succsinic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.0 | ??○ | ○ |
| Embodiment 22 | ????4.5 | Fumaric acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.1 | ??○ | ○ |
| Embodiment 23 | ????4.5 | Oxyacetic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.5 | ??○ | ○ |
| Embodiment 24 | ????4.5 | Hexanodioic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.3 | ??○ | ○ |
| Embodiment 25 | ????4.5 | Xitix | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.1 | ??◎ | ◎ |
| Embodiment 26 | ????4.5 | Methylene-succinic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.9 | ??◎ | ◎ |
| Embodiment 27 | ????4.5 | Iminodiethanoic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.5 | ??◎ | ○ |
| Embodiment 28 | ????4.5 | Oxoethanoic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.6 | ??◎ | ◎ |
| Embodiment 29 | ????4.5 | Formic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??2.6 | ??◎ | ◎ |
| Embodiment 30 | ????4.5 | Vinylformic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.1 | ??◎ | ◎ |
| Embodiment 31 | ????4.5 | Ba Dousuan | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.5 | ??◎ | ◎ |
| Embodiment 32 | ????4.5 | Nicotinic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ??3.9 | ??◎ | ◎ |
Table 2
| Colloid carbon dioxide content (wt%) | Organic acid | Oxygenant | The pH value | Grinding rate | Scratch | |||
| Kind | Content (wt%) | Kind | Content (wt%) | |||||
| Comparative example 1 | ????4.5 | Oxysuccinic acid | ????1.0 | ?????- | ??????- | ????- | ??× | ??× |
| Comparative example 2 | ????4.5 | Toxilic acid | ????1.0 | ?????- | ??????- | ????- | ??× | ??× |
| Comparative example 3 | ????4.5 | Lactic acid | ????1.0 | ?????- | ??????- | ????- | ??× | ??× |
| Comparative example 4 | ????4.5 | Acetate | ????1.0 | ?????- | ??????- | ????- | ??× | ??× |
| Comparative example 5 | ????4.5 | L-glutamic acid | ????1.0 | Hydrogen peroxide | ????1.6 | ????7.9 | ??× | ??× |
| Comparative example 6 | ????4.5 | Oxysuccinic acid | ????1.0 | Potcrate | ????2.0 | ????2.6 | ??○ | ??× |
| Comparative example 7 | ????4.5 | Oxysuccinic acid | ????1.0 | Potassium Persulphate | ????2.0 | ????2.6 | ??○ | ??× |
| Comparative example 8 | ????4.5 | Sodium malate | ????1.0 | Hydrogen peroxide | ????1.6 | ????9.0 | ??× | ??× |
| Comparative example 9 | ????4.5 | The toxilic acid disodium | ????1.0 | Hydrogen peroxide | ????1.6 | ????8.8 | ??× | ??× |
| Comparative example 10 | ????13.9 | Iron nitrate | ????3.0 | ??- | ??????- | ????2.0 | ??◎ | ?× |
| Comparative example 11 | ????13.9 | Iron nitrate | ????3.0 | Hydrogen peroxide | ????1.6 | ????2.0 | ??◎ | ??× |
| Comparative example 12 | ????4.5 | Ferric ammonium citrate | ????1.0 | ??- | ??????- | ????7.5 | ??× | ??× |
| Comparative example 13 | ????4.5 | Ferric ammonium citrate | ????1.0 | Hydrogen peroxide | ????1.6 | ????6.3 | ??◎ | ??× |
Can find out that from the result of the embodiment 1～32 of table 1 composition for polishing of the present invention can obtain grinding rate faster.In addition, the result from embodiment 1～32 and comparative example 1～4 can find out that composition for polishing of the present invention can have been given play to higher nonferromagnetic substance.
Can find out from the result of embodiment 1～32 and comparative example 5,12 and 13, comprise at least a kind of organic acid composition for polishing that is selected from oxysuccinic acid, toxilic acid, lactic acid, acetate, citric acid, succsinic acid, fumaric acid, oxyacetic acid, hexanodioic acid, xitix, methylene-succinic acid, iminodiethanoic acid, oxoethanoic acid, formic acid, vinylformic acid, Ba Dousuan, nicotinic acid and comprise other organic acid such as L-glutamic acid or compare as the composition of the ferric ammonium citrate of organic acid molysite, the former can prevent the generation of scratch.
Can find out that from the result of embodiment 4 and comparative example 6,7 composition for polishing of the present invention is compared with the composition of Potcrate that comprises the metal ion oxygenant and Potassium Persulphate, the former grinding rate is faster, and can prevent the generation of scratch.
Can find out that from the result of embodiment 1～9 and comparative example 8,9 contain organic acid composition for polishing of the present invention and compare with the composition that contains organic acid salt, the former grinding rate is fast, and can prevent the generation of scratch.
Can find out that from the result of embodiment 1～26 and comparative example 10～13 composition for polishing of the present invention reaches the composition that also contains oxygenant with the composition that contained iron cpd in the past and compares, the former can prevent the generation of scratch.
The surface roughness of the substrate of crossing with any buck in embodiment 1～32 and the comparative example 1～13 all reduces to some extent, does not have problems in this respect.
As described above as seen, the grinding rate of composition for polishing of the present invention is fast, can suppress the generation of scratch, and surface roughness is reduced.
As mentioned above, the grinding rate of composition for polishing of the present invention is fast, can suppress the generation of scratch, and surface roughness is reduced.
The composition for polishing of the application of the invention can make grinding rate accelerate, and prevents the generation of scratch, and surface roughness is reduced, and can make the storage hard disk substrate with well processed surface effectively.
In addition, carry out pre-the grinding in advance at least 1 time, then the storage hard disk of smooth grinding front surface rugosity Ra below 30 dusts carried out smooth grinding with composition for polishing of the present invention again with substrate, can make storage hard disk substrate with well processed surface.
Claims (12)
1. be used to grind the composition of storage hard disk, it is characterized in that, comprise water, silicon-dioxide, oxygenant reaches at least a kind and is selected from oxysuccinic acid, toxilic acid, lactic acid, acetate, citric acid, succsinic acid, fumaric acid, oxyacetic acid, hexanodioic acid, xitix, methylene-succinic acid, iminodiethanoic acid, oxoethanoic acid, formic acid, vinylformic acid, Ba Dousuan, nicotinic acid, citraconic acid and tartaric organic acid, the pH value of described composition is more than 1 but less than 7, and do not contain metal ion in the composition in fact.
2. the composition that is used to grind the storage hard disk as claimed in claim 1, wherein, the content of metal ion is below 500ppm.
3. the composition that is used to grind the storage hard disk as claimed in claim 1 or 2, wherein, silicon-dioxide is the colloid carbonic acid gas.
4. as each described composition that is used to grind the storage hard disk of claim 1～3, wherein, oxygenant is at least a kind that is selected from chloric acid, perchloric acid, sulfuric acid, persulfuric acid, nitric acid, peroxy-nitric acid, hydrogen peroxide, acid iodide and the Periodic acid.
5. the composition that is used to grind the storage hard disk as claimed in claim 4, wherein, oxygenant is a hydrogen peroxide.
6. as each described composition that is used to grind the storage hard disk of claim 1～5, wherein, organic acid is at least a kind that is selected from oxysuccinic acid, toxilic acid, lactic acid, methylene-succinic acid and the acetate.
7. as each described composition that is used to grind the storage hard disk of claim 1～6, wherein, dioxide-containing silica is 1～40% corresponding to the weight of composition for polishing.
8. as each described composition that is used to grind the storage hard disk of claim 1～7, wherein, oxygenate content is 0.1～5% corresponding to the weight of composition for polishing.
9. as each described composition that is used to grind the storage hard disk of claim 1～8, wherein, organic acid content is 0.01～10% corresponding to the weight of composition for polishing.
10. as the described composition that is used to grind the storage hard disk of each of claim 1～9, the pH value of described composition is more than 2 but less than 4.
11. the manufacture method of storage hard disk is characterized in that, with each described composition for polishing of claim 1～9 Ni-P of surface roughness Ra below 30 dusts is coiled and grinds.
12. the manufacture method of storage hard disk is characterized in that, carries out smooth grinding to having carried out at least 1 pre-grinding, the storage hard disk of surface roughness Ra below 15 dusts in advance with substrate with each described composition for polishing of claim 1～9.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP096699/01 | 2001-03-29 | ||
| JP2001096699A JP4439755B2 (en) | 2001-03-29 | 2001-03-29 | Polishing composition and method for producing memory hard disk using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1379074A true CN1379074A (en) | 2002-11-13 |
| CN1234798C CN1234798C (en) | 2006-01-04 |
Family
ID=18950586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02107700 Expired - Fee Related CN1234798C (en) | 2001-03-29 | 2002-03-29 | Composition for grinding and manufacturing method of storage hard disk using said composition |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4439755B2 (en) |
| CN (1) | CN1234798C (en) |
| GB (1) | GB2375116B (en) |
| MY (1) | MY131997A (en) |
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| CN1796482B (en) * | 2004-10-19 | 2010-06-02 | 不二见株式会社 | Composition for selectively polishing silicon nitride layer and polishing method employing it |
| CN102187434A (en) * | 2008-10-20 | 2011-09-14 | 霓达哈斯股份有限公司 | Composition for polishing silicon nitride and method for controlling selectivity using same |
| CN101180379B (en) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| CN110655867A (en) * | 2018-06-28 | 2020-01-07 | 凯斯科技股份有限公司 | Polishing slurry composition |
| CN111574927A (en) * | 2020-06-22 | 2020-08-25 | 宁波日晟新材料有限公司 | Silicon carbide polishing solution containing reducing agent and preparation method and application thereof |
| CN111718656A (en) * | 2019-03-22 | 2020-09-29 | 福吉米株式会社 | Polishing composition and polishing method |
| CN114952437A (en) * | 2022-05-27 | 2022-08-30 | 中国人民解放军国防科技大学 | Processing method of NiP modified layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003170349A (en) * | 2001-09-27 | 2003-06-17 | Fujimi Inc | Composition for polishing of substrate for magnetic disc and polishing method using it |
| JP3997152B2 (en) | 2002-12-26 | 2007-10-24 | 花王株式会社 | Polishing liquid composition |
| TWI254741B (en) | 2003-02-05 | 2006-05-11 | Kao Corp | Polishing composition |
| US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
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| JP2006021259A (en) * | 2004-07-06 | 2006-01-26 | Fuji Electric Device Technology Co Ltd | Polishing method of magnetic disk base board and magnetic disk medium |
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| JP4891304B2 (en) * | 2008-10-23 | 2012-03-07 | 花王株式会社 | Manufacturing method of memory hard disk substrate |
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| US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
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| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
| JP4238951B2 (en) * | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| JP2001187878A (en) * | 1999-12-28 | 2001-07-10 | Nec Corp | Slurry for chemical mechanical polishing |
| US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
-
2001
- 2001-03-29 JP JP2001096699A patent/JP4439755B2/en not_active Expired - Lifetime
-
2002
- 2002-03-14 GB GB0206036A patent/GB2375116B/en not_active Expired - Fee Related
- 2002-03-22 MY MYPI20021016 patent/MY131997A/en unknown
- 2002-03-29 CN CN 02107700 patent/CN1234798C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796482B (en) * | 2004-10-19 | 2010-06-02 | 不二见株式会社 | Composition for selectively polishing silicon nitride layer and polishing method employing it |
| CN101180379B (en) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| CN102187434A (en) * | 2008-10-20 | 2011-09-14 | 霓达哈斯股份有限公司 | Composition for polishing silicon nitride and method for controlling selectivity using same |
| US10421884B2 (en) | 2008-10-20 | 2019-09-24 | Nitta Haas Incorporated | Method of controlling selectivity using composition for polishing silicon nitride |
| CN110655867A (en) * | 2018-06-28 | 2020-01-07 | 凯斯科技股份有限公司 | Polishing slurry composition |
| US11279851B2 (en) | 2018-06-28 | 2022-03-22 | Kctech Co., Ltd. | Polishing slurry composition |
| CN111718656A (en) * | 2019-03-22 | 2020-09-29 | 福吉米株式会社 | Polishing composition and polishing method |
| CN111574927A (en) * | 2020-06-22 | 2020-08-25 | 宁波日晟新材料有限公司 | Silicon carbide polishing solution containing reducing agent and preparation method and application thereof |
| CN114952437A (en) * | 2022-05-27 | 2022-08-30 | 中国人民解放军国防科技大学 | Processing method of NiP modified layer |
| CN114952437B (en) * | 2022-05-27 | 2023-08-18 | 中国人民解放军国防科技大学 | Processing method of NiP modified layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002294225A (en) | 2002-10-09 |
| CN1234798C (en) | 2006-01-04 |
| GB2375116B (en) | 2004-10-20 |
| GB0206036D0 (en) | 2002-04-24 |
| MY131997A (en) | 2007-09-28 |
| JP4439755B2 (en) | 2010-03-24 |
| GB2375116A (en) | 2002-11-06 |
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