CN1360221A - Multi-mode interfered waveguide-type lithium niobate-based optical power distributor - Google Patents
Multi-mode interfered waveguide-type lithium niobate-based optical power distributor Download PDFInfo
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- CN1360221A CN1360221A CN 01138104 CN01138104A CN1360221A CN 1360221 A CN1360221 A CN 1360221A CN 01138104 CN01138104 CN 01138104 CN 01138104 A CN01138104 A CN 01138104A CN 1360221 A CN1360221 A CN 1360221A
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- waveguide
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- lithium niobate
- optical power
- optical
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- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Abstract
一种铌酸锂基多模干涉波导型光功分器,包括1×N多模干涉光波导,是在铌酸锂衬底上设置渐变折射率分布的多模光干涉区、及多模光干涉区两端的单模输入波导和N个单模输出波导。本发明由于采用了渐变折射率分布波导,所以用简单的工艺制作过程在商用化程度很高且具有很好光学特性的铌酸锂基片上制作出性能优良的多模干涉波导型光功分器,可进一步商业化,低投入、高产出,形成规模化生产。并可进一步研制出M×N多模干涉波导型光耦合器。
A lithium niobate-based multi-mode interference waveguide optical power splitter, comprising a 1×N multi-mode interference optical waveguide, a multi-mode optical interference region with a graded refractive index distribution set on a lithium niobate substrate, and a multi-mode optical power splitter. Single-mode input waveguides and N single-mode output waveguides at both ends of the interference region. Because the present invention adopts the graded refractive index distribution waveguide, a multi-mode interference waveguide optical power splitter with excellent performance can be produced on a lithium niobate substrate with a high degree of commercialization and good optical properties by using a simple manufacturing process. , can be further commercialized, low input, high output, and form large-scale production. And the M×N multi-mode interference waveguide optical coupler can be further developed.
Description
Technical field
The present invention relates to a kind of waveguide type optical power distributor.
Background technology
Utilization is a kind of new device from multiple-mode interfence (MMI) the type device of mirror effect, and its Design Theory and manufacturing process are relatively easy, has device size compactness, light good uniformity and extensively being paid attention to along separate routes simultaneously.The multi-mode interfered waveguide-type optical power distributor is to be made of single mode input waveguide, multiple-mode optical interference district and single mode output waveguide.This multi-mode interfered waveguide-type optical power distributor is based on the step-refraction index distribution waveguide, because traditional all is at based on the step-refraction index distribution waveguide from the mirror effect analysis, yet in the application of integrated optics, it is that graded index distributes that most waveguide is arranged, as the lithium niobate waveguide (LiNbO that obtains with proton exchange
3) the present still blank of research.
Summary of the invention
The purpose of this invention is to provide a kind of on lithium niobate substrate 1 * N multi-mode interfered waveguide-type optical power distributor of graded index distribution waveguide.
The objective of the invention is to realize by following measure: comprising 1 * N multi-mode interfrence optical waveguide, is the multiple-mode optical interference district that the graded index distribution is set on lithium niobate substrate, single mode input waveguide and N the single mode output waveguide that reaches two ends, multiple-mode optical interference district.
When waveguide is set, at first determine the waveguide parameter of index distribution function, operation wavelength and the single mode operation state of graded index distribution waveguide, choose the multiple-mode optical interference sector width then, one end center is aided with the single mode input waveguide in the multiple-mode optical interference district again, evenly arrange N single mode output waveguide at the multiple-mode optical interference district other end, the length L in the corresponding multiple-mode optical interference district when at first utilizing three-dimensional full vector finite difference beam Propagation method to seek each single mode output waveguide luminous power to be in maximal value
i(i=1,2,3 ... N), then successively with L
iBe the multiple-mode interfence section length, change the center of i single mode output waveguide, the center of i single mode output waveguide when utilizing three-dimensional full vector finite difference beam Propagation method to seek i single mode output waveguide maximum Output optical power once more.
The present invention is owing to adopted the graded index distribution waveguide; can be very high and have 1 * N multi-mode interfered waveguide-type optical power distributor of producing function admirable on the lithium niobate substrate of fine optical characteristics in the commercialization degree with simple technology manufacturing process; further commercialization; low input, high production form large-scale production.And can further develop M * N multi-mode interfered waveguide-type photo-coupler.
Description of drawings
Fig. 1 is the present invention a kind of 1 * 8 a waveguiding structure synoptic diagram.
Embodiment
With reference to Fig. 1, specific design parameter of the present invention depends on lithium niobate substrate and concrete proton exchange technological process.From practical standpoint, selected proton exchange lithium niobate waveguide will have and the index distribution and the single mode waveguide size of communicating by letter and mating as far as possible with standard single-mode fiber.Simulate on this basis and optimize analysis, choose other parameter.Parameter does not have absolute value.Cutting X biography lithium niobate substrate with Z is substrate, the particle exchanging technology of annealing, selected waveguide parameter (N=8 is an example) is: operation wavelength is 1.55 μ m, the width of single mode input waveguide 1 and each single mode output waveguide 3 is 6 μ m, length is 3000 μ m, this parameter has certain arbitrariness, for termination is quoted, N=8, i.e. 1 * 8 multi-mode interfered waveguide-type optical power distributor, the width in multiple-mode optical interference district 2 is 128 μ m, on this basis, (this moment, 1 * 8 multi-mode interfered waveguide-type optical power distributor had big Output optical power to utilize three-dimensional full vector finite difference beam Propagation method to calculate the optimum length in corresponding multiple-mode optical interference district 2, and power uniformity coefficient preferably arranged) be 2930 μ m, when the center of single mode input waveguide 1 was 0, the center of 8 single mode output waveguides 3 was respectively-55.6 μ m from the bottom to top,-39.8 μ m,-23.8 μ m,-7.9 μ m, 7.9 μ m, 23.8 μ m, 39.8 μ m, 55.6 μ m.
Manufacture craft: 1. Z cuts X biography lithium niobate substrate and makes desired standard substrate sheet through cutting, corase grind, finishing polish; 2. utilize vacuum evaporation technique on lithium niobate substrate, to steam the thick aluminium film of 1 μ m; 3. after the aluminium film on the substrate being carried out photoetching, with 70 ℃ phosphoric acid (H
3PO
4) corrosive liquid carries out water-bath corrosion, prepares the aluminium mask pattern; 4. again this substrate is placed in 400 ℃ the benzoic acid crystal liquation and carried out proton exchange 5 hours, prepare the graded index distribution waveguide; 5. annealing; 6. at last fall aluminium film remaining on the substrate with 70 ℃ phosphoric acid corrosion again, and make end face and polish.
Claims (1)
1, a kind of multi-mode interfered waveguide-type lithium niobate-based optical power distributor, comprise 1 * N multi-mode interfrence optical waveguide, it is characterized in that: multiple-mode optical interference district [2] and single mode input waveguide [1] and N single mode output waveguide [3] that graded index distributes are set on lithium niobate substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01138104 CN1116622C (en) | 2001-12-31 | 2001-12-31 | Multi-mode interfered waveguide-type lithium niobate-based optical power distributor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01138104 CN1116622C (en) | 2001-12-31 | 2001-12-31 | Multi-mode interfered waveguide-type lithium niobate-based optical power distributor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1360221A true CN1360221A (en) | 2002-07-24 |
| CN1116622C CN1116622C (en) | 2003-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01138104 Expired - Fee Related CN1116622C (en) | 2001-12-31 | 2001-12-31 | Multi-mode interfered waveguide-type lithium niobate-based optical power distributor |
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| CN (1) | CN1116622C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101344611B (en) * | 2004-08-02 | 2011-07-06 | 日本电信电话株式会社 | Planar lightwave circuit, design method for wave propagation circuit, and computer program |
| CN102136619A (en) * | 2011-01-23 | 2011-07-27 | 浙江大学 | Space power divider/combiner |
| CN108732682A (en) * | 2018-05-29 | 2018-11-02 | 聊城大学 | A kind of preparation method of the full crystal waveguide beam splitter of multi-mode interference-type |
| CN109581584A (en) * | 2018-11-22 | 2019-04-05 | 上海理工大学 | A kind of heterogeneous integrated scanning chip of silicon-lithium niobate and preparation method thereof, application |
-
2001
- 2001-12-31 CN CN 01138104 patent/CN1116622C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101344611B (en) * | 2004-08-02 | 2011-07-06 | 日本电信电话株式会社 | Planar lightwave circuit, design method for wave propagation circuit, and computer program |
| CN102136619A (en) * | 2011-01-23 | 2011-07-27 | 浙江大学 | Space power divider/combiner |
| CN108732682A (en) * | 2018-05-29 | 2018-11-02 | 聊城大学 | A kind of preparation method of the full crystal waveguide beam splitter of multi-mode interference-type |
| CN109581584A (en) * | 2018-11-22 | 2019-04-05 | 上海理工大学 | A kind of heterogeneous integrated scanning chip of silicon-lithium niobate and preparation method thereof, application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1116622C (en) | 2003-07-30 |
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