CN1347577A - 可调谐微波设备 - Google Patents
可调谐微波设备 Download PDFInfo
- Publication number
- CN1347577A CN1347577A CN00806247A CN00806247A CN1347577A CN 1347577 A CN1347577 A CN 1347577A CN 00806247 A CN00806247 A CN 00806247A CN 00806247 A CN00806247 A CN 00806247A CN 1347577 A CN1347577 A CN 1347577A
- Authority
- CN
- China
- Prior art keywords
- ferroelectric
- equipment
- layer
- ferroelectric layer
- aforesaid right
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/088—Tunable resonators
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Constitution Of High-Frequency Heating (AREA)
- Thermistors And Varistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9901297A SE513809C2 (sv) | 1999-04-13 | 1999-04-13 | Avstämbara mikrovågsanordningar |
SE9901297-3 | 1999-04-13 | ||
SE99012973 | 1999-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1347577A true CN1347577A (zh) | 2002-05-01 |
CN1191659C CN1191659C (zh) | 2005-03-02 |
Family
ID=20415184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008062471A Expired - Fee Related CN1191659C (zh) | 1999-04-13 | 2000-04-11 | 可调谐微波设备 |
Country Status (14)
Country | Link |
---|---|
US (1) | US6433375B1 (zh) |
EP (1) | EP1169746B1 (zh) |
JP (1) | JP2002542609A (zh) |
KR (1) | KR20010112416A (zh) |
CN (1) | CN1191659C (zh) |
AT (1) | ATE395723T1 (zh) |
AU (1) | AU4443800A (zh) |
CA (1) | CA2372103A1 (zh) |
DE (1) | DE60038875D1 (zh) |
ES (1) | ES2304956T3 (zh) |
HK (1) | HK1046474A1 (zh) |
SE (1) | SE513809C2 (zh) |
TW (1) | TW441146B (zh) |
WO (1) | WO2000062367A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693837A (zh) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | 一种具有周期叠层铁电薄膜的电容及其制备方法 |
CN103762078A (zh) * | 2014-01-20 | 2014-04-30 | 中国科学院物理研究所 | 基于组合薄膜的宽温区可调谐微波器件 |
CN114544064A (zh) * | 2022-01-17 | 2022-05-27 | 江苏科技大学 | 一种谐振式石墨烯气体压力传感器 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3833895B2 (ja) | 1998-03-30 | 2006-10-18 | シーゲイト テクノロジー エルエルシー | スプリアス反射からの雑音を低減する手段を備えた光データ記憶システム |
US6574015B1 (en) | 1998-05-19 | 2003-06-03 | Seagate Technology Llc | Optical depolarizer |
EP1290752A1 (en) * | 2000-05-02 | 2003-03-12 | Paratek Microwave, Inc. | Voltage tuned dielectric varactors with bottom electrodes |
DE10062614A1 (de) * | 2000-12-15 | 2002-07-04 | Forschungszentrum Juelich Gmbh | Anordnung mit abstimmbarer Kapazität und Verfahren zu deren Herstellung |
US6937195B2 (en) | 2001-04-11 | 2005-08-30 | Kyocera Wireless Corp. | Inverted-F ferroelectric antenna |
WO2002087082A1 (en) * | 2001-04-11 | 2002-10-31 | Kyocera Wireless Corporation | Tunable matching circuit |
US6690251B2 (en) | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
SE519705C2 (sv) * | 2001-08-22 | 2003-04-01 | Ericsson Telefon Ab L M | En avstämbar ferroelektrisk resonatoranordning |
US7030463B1 (en) | 2003-10-01 | 2006-04-18 | University Of Dayton | Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates |
US20060228855A1 (en) * | 2005-03-29 | 2006-10-12 | Intel Corporation | Capacitor with co-planar electrodes |
US8112852B2 (en) * | 2008-05-14 | 2012-02-14 | Paratek Microwave, Inc. | Radio frequency tunable capacitors and method of manufacturing using a sacrificial carrier substrate |
US7922975B2 (en) * | 2008-07-14 | 2011-04-12 | University Of Dayton | Resonant sensor capable of wireless interrogation |
US20100096678A1 (en) * | 2008-10-20 | 2010-04-22 | University Of Dayton | Nanostructured barium strontium titanate (bst) thin-film varactors on sapphire |
WO2011090933A1 (en) * | 2010-01-21 | 2011-07-28 | Northeastern University | Voltage tuning of microwave magnetic devices using magnetoelectric transducers |
US9000866B2 (en) | 2012-06-26 | 2015-04-07 | University Of Dayton | Varactor shunt switches with parallel capacitor architecture |
RU2571582C2 (ru) * | 2013-08-13 | 2015-12-20 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Отклоняющая система для управления плоской электромагнитной волной |
US10703877B2 (en) | 2016-11-15 | 2020-07-07 | University Of Massachusetts | Flexible functionalized ceramic-polymer based substrates |
US10892728B2 (en) * | 2018-12-20 | 2021-01-12 | Mitsubishi Electric Research Laboratories, Inc. | Virtual inductors using ferroelectric capacitance and the fabrication method thereof |
CN113574734B (zh) * | 2019-11-29 | 2022-09-09 | 京东方科技集团股份有限公司 | 移相器及其制作方法和驱动方法、电子设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0426643B1 (en) * | 1989-10-30 | 1995-12-27 | Fina Research S.A. | Process for the preparation of metallocenes |
US5142437A (en) * | 1991-06-13 | 1992-08-25 | Ramtron Corporation | Conducting electrode layers for ferroelectric capacitors in integrated circuits and method |
US5155658A (en) * | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
KR960700533A (ko) * | 1992-12-01 | 1996-01-20 | 스티븐 에이취 앤드레이드 | 고온 초전도 및 강유전막을 통합한 동조식 마이크로파 기구(TUNABLE MICROWAVE DEVICES INCORPORATING HIFH RWMPWEruew SUPERCONDUCTING AND FERROELECTRIC FILMS) |
JPH06290991A (ja) * | 1993-03-31 | 1994-10-18 | Tdk Corp | 高周波用減結合キャパシタ |
JPH0773732A (ja) * | 1993-06-23 | 1995-03-17 | Sharp Corp | 誘電体薄膜素子及びその製造方法 |
JPH07283542A (ja) * | 1994-04-15 | 1995-10-27 | Murata Mfg Co Ltd | 積層セラミック部品 |
US5524092A (en) * | 1995-02-17 | 1996-06-04 | Park; Jea K. | Multilayered ferroelectric-semiconductor memory-device |
US5578846A (en) * | 1995-03-17 | 1996-11-26 | Evans, Jr.; Joseph T. | Static ferroelectric memory transistor having improved data retention |
JPH08321705A (ja) * | 1995-05-26 | 1996-12-03 | Idoutai Tsushin Sentan Gijutsu Kenkyusho:Kk | 高周波伝送線路およびその製造方法 |
US6151240A (en) * | 1995-06-01 | 2000-11-21 | Sony Corporation | Ferroelectric nonvolatile memory and oxide multi-layered structure |
US5640042A (en) * | 1995-12-14 | 1997-06-17 | The United States Of America As Represented By The Secretary Of The Army | Thin film ferroelectric varactor |
US6200894B1 (en) * | 1996-06-10 | 2001-03-13 | International Business Machines Corporation | Method for enhancing aluminum interconnect properties |
GB9711506D0 (en) * | 1996-06-24 | 1997-07-30 | Hyundai Electronics Ind | Method for forming conductive wiring of semiconductor device |
US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
US5846847A (en) * | 1996-11-07 | 1998-12-08 | Motorola, Inc. | Method of manufacturing a ferroelectric device |
JPH10214947A (ja) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | 薄膜誘電体素子 |
JP3482883B2 (ja) * | 1998-08-24 | 2004-01-06 | 株式会社村田製作所 | 強誘電体薄膜素子およびその製造方法 |
-
1999
- 1999-04-13 SE SE9901297A patent/SE513809C2/sv not_active IP Right Cessation
- 1999-04-29 TW TW088106942A patent/TW441146B/zh not_active IP Right Cessation
-
2000
- 2000-04-11 JP JP2000611334A patent/JP2002542609A/ja active Pending
- 2000-04-11 CA CA002372103A patent/CA2372103A1/en not_active Abandoned
- 2000-04-11 DE DE60038875T patent/DE60038875D1/de not_active Expired - Lifetime
- 2000-04-11 ES ES00925804T patent/ES2304956T3/es not_active Expired - Lifetime
- 2000-04-11 AT AT00925804T patent/ATE395723T1/de not_active IP Right Cessation
- 2000-04-11 KR KR1020017012894A patent/KR20010112416A/ko not_active Application Discontinuation
- 2000-04-11 AU AU44438/00A patent/AU4443800A/en not_active Abandoned
- 2000-04-11 CN CNB008062471A patent/CN1191659C/zh not_active Expired - Fee Related
- 2000-04-11 EP EP00925804A patent/EP1169746B1/en not_active Expired - Lifetime
- 2000-04-11 WO PCT/SE2000/000685 patent/WO2000062367A1/en active Search and Examination
- 2000-04-13 US US09/548,161 patent/US6433375B1/en not_active Expired - Lifetime
-
2002
- 2002-11-01 HK HK02107969.0A patent/HK1046474A1/zh unknown
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693837A (zh) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | 一种具有周期叠层铁电薄膜的电容及其制备方法 |
CN102693837B (zh) * | 2011-03-23 | 2015-11-18 | 成都锐华光电技术有限责任公司 | 一种具有周期叠层铁电薄膜的电容及其制备方法 |
CN103762078A (zh) * | 2014-01-20 | 2014-04-30 | 中国科学院物理研究所 | 基于组合薄膜的宽温区可调谐微波器件 |
CN103762078B (zh) * | 2014-01-20 | 2017-02-01 | 中国科学院物理研究所 | 基于组合薄膜的宽温区可调谐微波器件 |
CN114544064A (zh) * | 2022-01-17 | 2022-05-27 | 江苏科技大学 | 一种谐振式石墨烯气体压力传感器 |
CN114544064B (zh) * | 2022-01-17 | 2023-11-21 | 江苏科技大学 | 一种谐振式石墨烯气体压力传感器 |
Also Published As
Publication number | Publication date |
---|---|
EP1169746B1 (en) | 2008-05-14 |
HK1046474A1 (zh) | 2003-01-10 |
AU4443800A (en) | 2000-11-14 |
WO2000062367A8 (en) | 2001-03-29 |
CN1191659C (zh) | 2005-03-02 |
SE9901297D0 (sv) | 1999-04-13 |
WO2000062367A1 (en) | 2000-10-19 |
ES2304956T3 (es) | 2008-11-01 |
KR20010112416A (ko) | 2001-12-20 |
SE9901297L (sv) | 2000-10-14 |
US6433375B1 (en) | 2002-08-13 |
TW441146B (en) | 2001-06-16 |
JP2002542609A (ja) | 2002-12-10 |
EP1169746A1 (en) | 2002-01-09 |
SE513809C2 (sv) | 2000-11-06 |
CA2372103A1 (en) | 2000-10-19 |
ATE395723T1 (de) | 2008-05-15 |
DE60038875D1 (de) | 2008-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1191659C (zh) | 可调谐微波设备 | |
US6727535B1 (en) | Ferroelectric varactor with built-in DC blocks | |
US6377440B1 (en) | Dielectric varactors with offset two-layer electrodes | |
US5640042A (en) | Thin film ferroelectric varactor | |
EP1145362B1 (en) | Electrically tunable filters with dielectric varactors | |
AU680866B2 (en) | Tunable microwave devices incorporating high temperature superconducting and ferroelectric films | |
US8953299B2 (en) | Capacitors adapted for acoustic resonance cancellation | |
EP1135825B1 (en) | Ferroelectric varactor with built-in dc blocks | |
WO2000024080A1 (en) | Voltage tunable laminated dielectric materials for microwave applications | |
CN1192294A (zh) | 可调谐微波器件 | |
CN1961391A (zh) | 贱金属电极上的金属氧化物陶瓷薄膜 | |
WO1999063558A1 (en) | Voltage variable capacitor array | |
US7109818B2 (en) | Tunable circuit for tunable capacitor devices | |
US5604375A (en) | Superconducting active lumped component for microwave device application | |
US20060012448A1 (en) | Ferroelectric devices and method relating thereto | |
US9424994B2 (en) | Tunable interdigitated capacitor | |
US7221237B2 (en) | Frequency tunable device | |
Koh et al. | Electrically tunable Ag (Ta, Nb) O3 thin film structures on oxide substrates | |
KR19990009347A (ko) | 강유전체를 분극을 이용한 초전도체 위크 링크 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1046474 Country of ref document: HK |
|
ASS | Succession or assignment of patent right |
Owner name: CLUSTER CO., LTD. Free format text: FORMER OWNER: TELEFONAKTIEBOLAGET LM ERICSSON (SE) S-126 25 STOCKHOLM, SWEDEN Effective date: 20150128 Owner name: AOPU DISI CELLULAR TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CLUSTER CO., LTD. Effective date: 20150128 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150128 Address after: Texas, USA Patentee after: Telefonaktiebolaget LM Ericsson (publ) Address before: Delaware Patentee before: Clastres LLC Effective date of registration: 20150128 Address after: Delaware Patentee after: Clastres LLC Address before: Stockholm Patentee before: Telefonaktiebolaget LM Ericsson |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050302 Termination date: 20180411 |
|
CF01 | Termination of patent right due to non-payment of annual fee |