CN1327296C - 包括二次电子清除单元的平版印刷投影装置 - Google Patents

包括二次电子清除单元的平版印刷投影装置 Download PDF

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Publication number
CN1327296C
CN1327296C CNB2003101196105A CN200310119610A CN1327296C CN 1327296 C CN1327296 C CN 1327296C CN B2003101196105 A CNB2003101196105 A CN B2003101196105A CN 200310119610 A CN200310119610 A CN 200310119610A CN 1327296 C CN1327296 C CN 1327296C
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CN
China
Prior art keywords
radiation
target
lithographic projection
voltage
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003101196105A
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English (en)
Chinese (zh)
Other versions
CN1497358A (zh
Inventor
R·库尔特
L·P·巴克
F·J·P·舒尔曼斯
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ASML Netherlands BV
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ASML Netherlands BV
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Publication date
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Publication of CN1497358A publication Critical patent/CN1497358A/zh
Application granted granted Critical
Publication of CN1327296C publication Critical patent/CN1327296C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2003101196105A 2002-10-18 2003-10-17 包括二次电子清除单元的平版印刷投影装置 Expired - Fee Related CN1327296C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02079329 2002-10-18
EP02079329.5 2002-10-18

Publications (2)

Publication Number Publication Date
CN1497358A CN1497358A (zh) 2004-05-19
CN1327296C true CN1327296C (zh) 2007-07-18

Family

ID=32668752

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101196105A Expired - Fee Related CN1327296C (zh) 2002-10-18 2003-10-17 包括二次电子清除单元的平版印刷投影装置

Country Status (7)

Country Link
US (1) US6791665B2 (https=)
JP (1) JP4058404B2 (https=)
KR (1) KR100544357B1 (https=)
CN (1) CN1327296C (https=)
DE (1) DE60323584D1 (https=)
SG (1) SG115575A1 (https=)
TW (1) TWI294995B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
US7800079B2 (en) * 2003-12-22 2010-09-21 Asml Netherlands B.V. Assembly for detection of radiation flux and contamination of an optical component, lithographic apparatus including such an assembly and device manufacturing method
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US7629594B2 (en) * 2006-10-10 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US7825390B2 (en) * 2007-02-14 2010-11-02 Asml Netherlands B.V. Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus
JP2010257998A (ja) * 2007-11-26 2010-11-11 Nikon Corp 反射投影光学系、露光装置、及びデバイスの製造方法
NL1036769A1 (nl) * 2008-04-23 2009-10-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device.
DE102013218748A1 (de) * 2013-09-18 2014-10-02 Carl Zeiss Smt Gmbh Optisches Bauelement
CN113767335B (zh) * 2019-04-09 2025-01-14 库力&索法利特克有限公司 平版印刷系统及操作该系统的方法
KR102829107B1 (ko) * 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
CN115210970B (zh) * 2020-03-03 2025-09-12 西默有限公司 用于光源的控制系统
JP6844798B1 (ja) * 2020-05-26 2021-03-17 レーザーテック株式会社 光学装置、及び光学装置の汚染防止方法
WO2023094084A1 (en) * 2021-11-25 2023-06-01 Asml Netherlands B.V. An optical device, illumination system, projection system, euv radiation source, lithographic apparatus, deposition of contamination preventing method, and optical component refurbishing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
CN1332055A (zh) * 2000-07-07 2002-01-23 海德堡印刷机械股份公司 用超短激光脉冲在印版上制作图象
EP1182510A1 (en) * 2000-08-25 2002-02-27 Asm Lithography B.V. Lithographic projection apparatus and mask handling device
EP1223468A1 (en) * 2001-01-10 2002-07-17 ASML Netherlands BV Lithographic projection Apparatus and device manufacturing method
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
GB0031194D0 (en) 2000-12-21 2001-01-31 Eastman Kodak Co Processing photographic material
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
CN1332055A (zh) * 2000-07-07 2002-01-23 海德堡印刷机械股份公司 用超短激光脉冲在印版上制作图象
EP1182510A1 (en) * 2000-08-25 2002-02-27 Asm Lithography B.V. Lithographic projection apparatus and mask handling device
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
EP1223468A1 (en) * 2001-01-10 2002-07-17 ASML Netherlands BV Lithographic projection Apparatus and device manufacturing method

Also Published As

Publication number Publication date
TW200424784A (en) 2004-11-16
US20040130694A1 (en) 2004-07-08
US6791665B2 (en) 2004-09-14
KR20040034524A (ko) 2004-04-28
JP4058404B2 (ja) 2008-03-12
DE60323584D1 (de) 2008-10-30
TWI294995B (en) 2008-03-21
KR100544357B1 (ko) 2006-01-23
SG115575A1 (en) 2005-10-28
CN1497358A (zh) 2004-05-19
JP2004289120A (ja) 2004-10-14

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070718

Termination date: 20211017