CN1326697C - Fluid jet head with circuit to drive heater set - Google Patents
Fluid jet head with circuit to drive heater set Download PDFInfo
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- CN1326697C CN1326697C CNB2004100304022A CN200410030402A CN1326697C CN 1326697 C CN1326697 C CN 1326697C CN B2004100304022 A CNB2004100304022 A CN B2004100304022A CN 200410030402 A CN200410030402 A CN 200410030402A CN 1326697 C CN1326697 C CN 1326697C
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- 239000012530 fluid Substances 0.000 title claims abstract description 57
- 239000007921 spray Substances 0.000 claims description 18
- 230000004913 activation Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 28
- 238000000926 separation method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
The present invention relates to a fluid jet head with a circuit of a driving heater set, wherein a first and a second main transistors form electric connections with a first and a second heaters. When the first main transistor is switched on controlled by first control voltage, and first current generates and passes through the first heater, the first main transistor and a first current path, the first main transistor has a resistance value equivalent to the first main transistor. The resistance value corresponds to first control voltage. When the second main transistor is switched on controlled by second control voltage, and second current is generated and passes through the second heater, the second main transistor and a second current path, the second main transistor has a resistance value equivalent to the second main transistor. The resistance value corresponds to second control voltage. As a result, quantities of heat generated by the first and the second heaters are basically equal.
Description
Technical field
The relevant a kind of fluid ejecting head of the present invention, and particularly relevant for a kind of fluid ejecting head with the circuit that drives Heater group.
Background technology
Along with the progress of science and technology, fluid ejecting head applies in the ink gun of ink-jet printer widely.Wherein, it is the most general with the fluid ejecting head of the method for ejaculation drop to use heat to drive bubble (thermal driven bubble), and it has simplicity of design, and is with low cost, and can individually eject the advantage of the drop of shape unanimity.
Please refer to Fig. 1, it illustrates the bubble type fluid ejecting head with discharge mechanism of denomination of invention for No. the 5th, 604,519, the United States Patent (USP) case of " Inkjet Printhead Architecture for HighFrequency Operation ".Heater (Heater) the 102nd, with the drain electrode electric connection of mos field effect transistor (MOSFET) 104, and a discharge resistance (pull down resistor) the 106th, with the grid electric connection of MOSFET104.When MOSFET104 transfers not conducting to by conducting, the residual charge that is accumulated in grid will be got rid of to earth terminal (ground) in discharge resistance 106 is during fixing.So, it is slow to avoid MOSFET104 to close, and makes corresponding spray orifice still launch drop and the situation that produces misoperation takes place.
Yet on implementing, discharge resistance 106 is for by one snakelike (snaked shape) resistance that conductive material constituted, and is formed with a silicon dioxide layer between this snakelike resistance and the base material (substrate).Because the not direct contact substrate (its coefficient of heat conduction is 160W/mK) of discharge resistance 106, but the lower silicon dioxide layer (its coefficient of heat conduction is 1.4W/mK) of the direct contact heat coefficient of conductivity are so the radiating efficiency of discharge resistance 106 is not good.In addition, because snakelike resistance must take a large amount of chip areas, make the fluid ejecting head of No. the 5th, 604,519, United States Patent (USP) case have the excessive shortcoming of chip area.
Please refer to Fig. 2, it illustrates denomination of invention and produces the ink gun of identical heat for each heater that makes of No. the 6th, 412,917, the United States Patent (USP) case of " Energy Balanced Printhead Design ".Because the difference of each heater configuration position,, and make the varying in size of dead resistance at each heater 56 two ends so the lead that two ends connected (trace) length of each heater 56 is inequality.Different dead resistances will make the size of current difference of the heater 56 of flowing through, and the heat difference that makes heater 56 generations.In No. the 6th, 412,917, United States Patent (USP) case, be the size that is serially connected with the channel width (Channel Width) of the MOSFET 85 of heater 56 belows by adjustment, adjust the resistance value of passage, compensate with dead resistance each heater 56 two ends.Yet the United States Patent (USP) case is for the 6th, 412, No. 917 not have the residual charge that is accumulated in grid is got rid of function to earth terminal.
Therefore, how to design and effectively the residual charge that is accumulated in grid to be got rid of fast to earth terminal, improving the service speed of fluid ejecting head, and the fluid ejecting head that simultaneously dead resistance at each heater two ends is compensated, be one of industry problem of endeavouring to study.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of can effectively the residual charge that is accumulated in grid the eliminating fast to earth terminal, improving the service speed of fluid ejecting head, and the fluid ejecting head with the circuit that drives Heater group that simultaneously dead resistance at each heater two ends is compensated.
Propose a kind of according to an aspect of the present invention in order to drive the circuit of heater (heater) group, Heater group has a primary heater and a secondary heater, and this circuit comprises a plurality of current paths, a biasing selected unit, one first main transistor and one second main transistor.Each heater is to electrically connect with corresponding current path, and described current path comprises one first current path and one second current path.Biasing selected unit is in order to produce one first control voltage and one second control voltage.First main transistor is to electrically connect with primary heater.When first main transistor is subjected to the first control control of voltage and conducting, and one first electric current is produced and when flowing through primary heater, first main transistor and first current path, the resistance value of first main transistor is to be equivalent to one first main transistor equivalent resistance.And second main transistor is to electrically connect with secondary heater.When second main transistor is subjected to the second control control of voltage and conducting, and one second electric current is produced and when flowing through secondary heater, second main transistor and second current path, the resistance value of second main transistor is to be equivalent to one second main transistor equivalent resistance.Wherein, the first main transistor equivalent resistance and the second main transistor equivalent resistance are to correspond respectively to the first control voltage and the second control voltage, make primary heater equate with the heat that secondary heater produces.
Propose a kind of fluid ejecting head according to a further aspect of the invention, comprise a Heater group and one drive circuit.Heater group is to be arranged in the capable matrix of M row N.Wherein i be listed as the capable heater of j be for heater (i, j), i be listed as the capable heater of k be for heater (i, k), M, N, i, j, k are positive integer, i is smaller or equal to M, j is smaller or equal to N, j is not equal to k.Drive circuit comprises a plurality of current paths, a biasing selected unit and M * N main transistor.Each heater is and corresponding current path electrically connects, described current path comprise a current path (i, j) and a current path (i, k).Biasing selected unit comprises a j control voltage and a k control voltage in order to produce N control voltage.M * N main transistor comprises that (i, j) (i, k), (i is that (i j) electrically connects with heater j) to main transistor to a main transistor with main transistor.When main transistor (i j) is subjected to j the control control of voltage and conducting, and an electric current (i j) is produced and is flow through heater (i, j), main transistor (i, j) and current path (i is in the time of j), main transistor (i, resistance value j) be equivalent to a main transistor equivalent resistance (i, j).(i is that (i k) electrically connects with heater k) to main transistor, as main transistor (i, k) be subjected to k the control control of voltage and conducting, and an electric current (i k) is produced and is flow through heater (i, k), main transistor (i, k) and current path (i, in the time of k), main transistor (i, k) resistance value be equivalent to a main transistor equivalent resistance (i, k).Wherein, (i, j) (i is to correspond respectively to j control voltage and k control voltage k) to the main transistor equivalent resistance, makes that (i, j) (i, k) heat of Chan Shenging equates heater with heater with the main transistor equivalent resistance.
For further specifying above-mentioned purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
Description of drawings
Fig. 1 illustrates the bubble type fluid ejecting head with discharge mechanism of denomination of invention for No. the 5th, 604,519, the United States Patent (USP) of " Inkjet Printhead Architecture for High FrequencyOperation ";
Fig. 2 illustrates denomination of invention and produces the ink gun of identical heat for each heater that makes of No. the 6th, 412,917, the United States Patent (USP) case of " Energy Balanced Printhead Design ";
Fig. 3 A is the circuit diagram according to the circuit of a kind of Heater group in order to the drive fluid injector head of a preferred embodiment of the present invention;
Fig. 3 B is the part enlarged drawing of Fig. 3 A;
Fig. 4 is the part side view of the fluid ejecting head of present embodiment;
Fig. 5 is the part vertical view of the fluid ejecting head of present embodiment;
Fig. 6 is the circuit diagram that current mirror is applied to the circuit of Fig. 5; And
Fig. 7 is the oscillogram in order to employed each signal of circuit of the Heater group of drive fluid injector head of present embodiment.
The specific embodiment
Please refer to simultaneously Fig. 3 A and Fig. 3 B, Fig. 3 A is that Fig. 3 B is the part enlarged drawing of Fig. 3 A according to the circuit diagram of the circuit of a kind of Heater group in order to the drive fluid injector head of a preferred embodiment of the present invention.The fluid ejecting head of present embodiment includes a Heater group and one drive circuit.Heater group has M * N heater R, is to be arranged in the capable matrix of M row N.Wherein i be listed as the capable heater R of j be for heater R (i, j), i be listed as the capable heater R of k be for heater R (i, k), M, N, i, j, k are positive integer, i is smaller or equal to M, j is smaller or equal to N, j is not equal to k.
Drive circuit comprises a plurality of current paths, a biasing selected unit 302 and M * N main transistor Q.Each heater R is and corresponding current path electrically connects, described current path comprise a current path (i, j) and a current path (i, k).Biasing selected unit 302 comprises a j control voltage VG (j) and a k control voltage VG (k) in order to produce N control voltage VG.And M * N main transistor Q comprise a main transistor Q (i, j) with main transistor Q (i, k).(i is that (i j) electrically connects with heater R j) to main transistor Q.As main transistor Q (i, j) be subjected to j control voltage VG (j) control and conducting, an and electric current I (i, j) produced and flow through heater R (i, j), main transistor Q (i, j) and current path (i, j) time, main transistor Q (i, resistance value j) be equivalent to a main transistor equivalent resistance (i, k).(i is that (i k) electrically connects with heater R k) to main transistor Q, as main transistor Q (i, k) be subjected to the control of k control voltage VG (k) and conducting, and an electric current I (i k) is produced and is flow through heater R (i, k), main transistor Q (i, k) and current path (i, in the time of k), main transistor Q (i, k) resistance value be equivalent to a main transistor equivalent resistance (i, k).Wherein, (i, j) (i is to correspond respectively to j control voltage VG (j) and k control voltage VG (k) k) to the main transistor equivalent resistance, makes that (i, j) (i, k) heat of Chan Shenging equates heater R with heater R with the main transistor equivalent resistance.
Now with M=16, N=19, i=1, j=1, k=8 are that example is done further explanation.Please be simultaneously with reference to Fig. 4 and Fig. 5, wherein Fig. 4 is the part side view of the fluid ejecting head of present embodiment; Fig. 5 is the part vertical view of the fluid ejecting head of present embodiment.As shown in Figure 4, the fluid ejecting head 400 of present embodiment comprises base material 402, and base material has M * N manifold (manifold), M * N fluid cavity (chamber) and M * N spray orifice (orifice).Fig. 4 illustrates for example with the pairing manifold 403 of main transistor Q (1,1), fluid cavity 404, spray orifice 406 and heater R (1,1).One end of manifold 403 is to be formed on a lower surface 402A of base material 402.Fluid cavity 404 is the tops that are disposed at corresponding manifold 403, and is communicated with corresponding manifold 403.Fluid cavity 404 is in order to hold fluid.All spray orifices are to be arranged in the capable matrix of M row N.Spray orifice 406 is the tops that are disposed at corresponding fluid cavity 404.One end of spray orifice 406 is to be formed on the upper surface 402B of base material 402.Heater R (1,1) is disposed at corresponding spray orifice 406 sides.When heater R (1,1) produced heat, corresponding spray orifice 406 produced bubble, so that the ejection of the fluid in the corresponding fluid cavity 404.
Wherein, it is the ink gun of an ink-jet printer that the fluid ejecting head 400 of present embodiment is preferably, and fluid ejecting head 400 also comprises an ink cartridges 410.Manifold 403 is to be communicated with ink cartridges 410, and above-mentioned fluid is preferably to be ink.
In addition, fluid ejecting head 400 also comprises a plurality of power circuit CNO, is the upper surface that is positioned at the manifold top.Power circuit CNO (1,1) is in order to electrically connect corresponding heater R (1,1) and main transistor Q (1,1).The material of power circuit is to be selected from aluminium, gold, copper, tungsten, Al-Si-Cu alloy and albronze one of them or its combination.
Please be simultaneously with reference to Fig. 3 and Fig. 5.Suppose that all main transistors are N type metal oxide semiconductor (Ntype Metal Oxide Semiconductor, MOS) transistor.The drain electrode of main transistor Q (1,1) is and the end electric connection of heater R (1,1) that the source electrode of main transistor Q (1,1) is a ground connection.The other end of heater R (1,1) is to be connected to main separation to select line (Primary Select Line) PSL (1).As the 1st the control voltage VG (1) of biasing selected unit 302 output high levels during to the grid of main transistor Q (1,1), main transistor Q (1,1) conducting (Turned On).At this moment, if inputing to main separation via addressing electrode (pad) 502 selects the main separation of line PSL (1) and selects signal VP (1) when the activation, when for example the voltage of VP (1) transfers high levels to, electric current I (1,1) will produce, and flow through heater R (1,1), main transistor Q (1,1) drain electrode and source electrode and current path (1,1).Wherein, current path (1,1) is an electric current I (1,1) when producing, electric current I (1,1) flow through except other lead outside heater R (1,1) and the main transistor Q (1,1) or the set of conductor.For instance, current path (1,1) is to select line PSL (1), heater R (1 by main separation, 1) with main transistor Q (1,1) power circuit CNO (1,1) between and the source electrode of main transistor Q (1,1) and the power circuit GCN (1) between the earth electrode 504 form.At this moment, the resistance value of main transistor Q (1,1) is to be equivalent to a main transistor equivalent resistance (1,1).
Similarly, the drain electrode of main transistor Q (1,8) is and the end electric connection of heater R (1,8) that the source electrode of main transistor Q (1,8) is a ground connection.The other end of heater R (1,8) is to be connected to main separation to select line PSL (1).As the 8th the control voltage VG (8) of biasing selected unit 302 output high levels during to the grid of main transistor Q (1,8), main transistor Q (1,8) conducting.At this moment, select the main separation of line PSL (1) and select signal VP (1) when the activation, electric current I (1 if input to main separation via addressing electrode 502,8) will produce, and flow through heater R (1,8), main transistor Q (1,8) drain electrode and source electrode and current path (1,8), wherein, current path (1,8) is when producing for electric current I (1,8), electric current I (1,8) flow through except other lead outside heater R (1,8) and the main transistor Q (1,8) or the set of conductor.For instance, current path (1,8) is to select line PSL (1), heater R (1 by main separation, 1) with R (1,8) the power circuit CN1 (1,8) between, heater R (1,8) and main transistor Q (1,8) the power circuit CNO (1 between, 8), the power circuit CN2 (1 between the source electrode of the source electrode of main transistor Q (1,1) and main transistor Q (1,8), 8) and the source electrode of main transistor Q (1,1) and the power circuit GCN (1) between the earth electrode 504 form.At this moment, the resistance value of main transistor Q (1,8) is to be equivalent to a main transistor equivalent resistance (1,8).
As shown in Figure 3, because the allocation position difference of main transistor Q (1,1) and Q (1,8), so the length of its pairing current path is inequality.Because current path (1,8) than current path (1,1) many power circuit CN1 (1,8) and CN2 (1,8), so current path (1,8) length is also longer than the length of current path (1,1), makes current path (1,8) equivalent resistance is greater than the equivalent resistance of current path (1,1).If the main transistor equivalent resistance (1 of main transistor Q (1,1) and Q (1,8), 1) reach (1,8) and equate, and heater R (1,1) with heater R (1,8) resistance value equates that electric current I (1,1) will be greater than electric current I (1,8), and the heat that the heat that makes heater R (1,1) produce is produced greater than heater R (1,8).So, the droplet size that will be sprayed greater than heater R (1,8) by the droplet size that spray orifice sprayed of heater R (1,1) heating.And make to use the ejecting big or small uneven ink droplet of ink-jet printer of fluid ejecting head 400 and make the print quality variation.
In order to solve the above-mentioned different problem of the droplet size that spray orifice sprayed, present embodiment is to input to main transistor Q (1 by making, 1) controls voltage VG (1) and input to main transistor Q (1 for the 1st of grid, the position of the 8th the control voltage VG (8) of grid 8) is accurate different, make main transistor equivalent resistance (1,8) less than main transistor equivalent resistance (1,1), make electric current I (1,1) and the pairing overall resistance of I (1,8) equate so that electric current I (1,1) and I (1,8) equate.So, can make heater R (1,1) and heater R (1,8) produce the heat that equates.
Now with the generation of present embodiment the mode of the 1st control voltage VG (1) and the 8th the control voltage VG (8) of coordination standard be not illustrated in down.Please refer to Fig. 3, biasing selected unit 302 has N row selecting transistor CSQ and N current source CS.The drain electrode of N row selecting transistor CSQ is in order to receive a plurality of address signals respectively.N row selecting transistor CSQ comprises selection transistor CSQ of delegation (1) and the selection transistor CSQ (8) of delegation.N current source comprises a current source CS (1) and current source CS (8).A plurality of address signals comprise an address signal VA (1) and an address signal VA (8).Current source CS (1) is that the source electrode with row selecting transistor CSQ (1) couples, and current source CS (8) to be source electrode with row selecting transistor CSQ (8) couple, row selecting transistor CSQ (1) is to electrically connect and all receive control signal VAG ' (1) with the grid of row selecting transistor CSQ (8).The 1st control voltage VG (1) and the 8th control voltage VG (8) are the size of current that corresponds respectively to current source CS (1) and current source CS (8).As mentioned above, N for example is 19.
Wherein, the size of current IA1 of current source CS (1) is the size of current IA8 greater than current source CS (8).When the address signal VA (1) that drain electrode received of row selecting transistor CSQ (1) conducting and row selecting transistor CSQ (1) was activation, the electric current that flows through row selecting transistor CSQ (1) was IA1.According to MOSFET current formula: I
d=(1/2) μ
nC
Ox(W/L) (V
GS-V
t)
2(formula one) can be in the hope of the value of the 1st control voltage VG1 of the source electrode of row selecting transistor CSQ (1) output.Wherein, I
dFor flowing through the size of current of drain electrode, μ
nBe carrier mobility (carrier mobility), C
OxBe the gate oxidation layer capacitance, W and L are respectively channel width and length, V
GSBe the voltage difference between grid and source electrode, and V
tIt is critical voltage.
When the address signal that drain electrode received (8) of row selecting transistor CSQ (8) conducting and row selecting transistor CSQ (8) is activation, the electric current that flows through row selecting transistor CSQ (8) is IA8, can be calculated the value of the 8th the control voltage VG8 that the source electrode of row selecting transistor CSQ (8) exports by formula one.Because IA1 is greater than IA8, under row selecting transistor CSQ (1) condition identical with length ratio with the channel width of row selecting transistor CSQ (8), the voltage difference that can learn row selecting transistor CSQ (1) grid and source electrode be greater than with the grid of row selecting transistor CSQ (8) and the voltage difference of source electrode.In addition, because the voltage level of row selecting transistor CSQ (1) and the grid of row selecting transistor CSQ (8) is identical, so can learn that the voltage VG1 of the source electrode of row selecting transistor CSQ (1) will be less than the voltage VG8 of the source electrode of row selecting transistor CSQ (8).
Because the 1st control voltage voltage VG1 is less than the 2nd control voltage VG8, make the grid voltage of main transistor Q (1,1) less than the grid voltage of main transistor Q (1,8).Because the source grounding of main transistor Q (1,1) and Q (1,8) is so the voltage difference of the grid of main transistor Q (1,1) and source electrode is less than the grid of main transistor Q (1,8) and the voltage difference of source electrode.According to MOSFET equivalent resistance r
DsFormula r
Ds=1/ (μ
nC
Ox(W/L) (V
GS-V
t)) (formula two) as can be known, the main transistor equivalent resistance of main transistor Q (1,1) will be greater than the main transistor equivalent resistance of main transistor Q (1,8).So, can make the resistance value of heater R (1,1), main transistor equivalent resistance and the current path (1 of main transistor Q (1,1) effectively, 1) equivalent resistance and, equal the resistance value of heater R (1,8), main transistor equivalent resistance and the current path (1 of main transistor Q (1,8), 8) equivalent resistance and, and get so that the size of electric current I (1,1) equals electric current I (1,8).So, can reach the heat that heater R (1,1) and heater R (1,8) are produced and equate, and make the corresponding spray orifice of heater R (1,1) and heater R (1,8) penetrate the ink droplet of identical size.So present embodiment can reach the purpose of the print quality of promoting ink-jet printer.
In addition, as main transistor Q (1,1) when being closed, the residual charge of the grid of main transistor Q (1,1) is to get rid of via current source CS (1).As main transistor Q (1,8) when being closed, the residual charge of the grid of main transistor Q (1,8) is to get rid of via current source CS (8).So, present embodiment can also reach the residual charge that will be accumulated in the grid of main transistor apace and get rid of to earth terminal, to improve the service speed of fluid ejecting head, and can avoid closing slowly because of main transistor, and make corresponding spray orifice still launch drop and the situation that produces misoperation takes place.
Further, current source shown in Figure 3 is to use current mirror (current mirror) to realize.Please refer to Fig. 6, is the circuit diagram that current mirror is applied to the circuit of Fig. 5 shown in it.Row selecting transistor CSQ (1) ~ CSQ (8) electrically connects with the mirror of output end current more than (Multi-output current mirror).This many output end currents mirror comprises a reference current mirror transistor REFQ1, current mirror transistor CMQ (1) ~ CMQ (8).Now be that example is illustrated with current mirror transistor CMQ (1) and CMQ (8).The drain electrode of reference current mirror transistor REFQ1 and grid are to electrically connect.The grid of current mirror transistor CMQ (1) is the grid that is coupled to reference current mirror transistor REFQ1, the drain electrode of current mirror transistor CMQ (1) is the source electrode that is coupled to row selecting transistor CSQ (1), the drain electrode of current mirror transistor CMQ (1) also is coupled to the grid of main transistor Q (1,1).The grid of current mirror transistor CMQ (8) is the grid that is coupled to reference current mirror transistor REFQ1, the drain electrode of current mirror transistor CMQ (8) is the source electrode that is coupled to row selecting transistor CSQ (8), the drain electrode of current mirror transistor CMQ (8) also is coupled to the grid of main transistor Q (1,8).
Wherein, when the address signal VA (1) that drain electrode received of row selecting transistor CSQ (1) conducting and row selecting transistor CSQ (1) is activation, the source electrode of row selecting transistor CSQ (1) is the 1st control of output voltage VG (1), makes main transistor Q (1,1) conducting.When the address signal VA (8) that drain electrode received of row selecting transistor CSQ (8) conducting and row selecting transistor CSQ (8) is activation, the source electrode of row selecting transistor CSQ (8) is the 8th control of output voltage VG (8), make main transistor Q (1,8) conducting.The 1st control voltage VG (1) and the 8th control voltage VG (8) are to correspond respectively to the channel width of current mirror transistor CMQ (1) and ratio and the channel width of current mirror transistor CMQ (8) and the ratio of length of length.
Wherein, as main transistor Q (1,1) when being closed, the residual charge of the grid of main transistor Q (1,1) is to get rid of via current mirror transistor CMQ (1).As main transistor Q (1,8) when being closed, the residual charge of the grid of main transistor Q (1,8) is to get rid of via current mirror transistor CMQ (8).
Preferably, current mirror transistor CMQ (1) is different with the channel width of current mirror transistor CMQ (8) and the ratio of passage length.By formula one as can be known, current mirror transistor CMQ (1) and the channel width of current mirror transistor CMQ (8) and the ratio of passage length are the ratio that equals IA1 and IA8.
In addition, the grid of row selecting transistor CSQ (1) is the drain electrode that is coupled to reference current mirror transistor REFQ1, and the grid of row selecting transistor CSQ (8) is the drain electrode that is coupled to reference current mirror transistor REFQ1.As row selecting transistor CSQ (1) when being closed, the residual charge of the grid of row selecting transistor CSQ (1) is to get rid of via reference current mirror transistor REFQ1.As main transistor Q (1,8) when being closed, the residual charge of the grid of main transistor Q (1,8) is to get rid of via reference current mirror transistor REFQ1.So, more can accelerate the service speed of row selecting transistor CSQ (1) ~ CSQ (8).
On the other hand, biasing selected unit 302 also has S addressing electrode, for example is addressing electrode 502 shown in Figure 5.Please refer to Fig. 3, these addressing electrodes are in order to receive S address signal VA (1) ~ VA (S).N row selecting transistor is to be divided into the P group, and every group of row selecting transistor is to have S row selecting transistor at the most.Every group of row selecting transistor controlled by a zone-block selected transistor BSQ, and this S addressing electrode is that P group row selecting transistor electrically connects therewith.When the conducting of one of these zone-block selected transistors, all row selecting transistors of one group of corresponding row selecting transistor are conductings.This S address signal is the drain electrode that is sent to the row selecting transistor of corresponding conducting.
Wherein, as mentioned above, the N value for example is 19.And the S value for example is 8, and the P value for example is 3.8 addressing electrodes are to select signal VA (1) ~ VA (8) in order to receiver address.First group of row selecting transistor is made up of row selecting transistor CSQ (1) ~ CSQ (8), second group of row selecting transistor is by row selecting transistor CSQ (9) ~ CSQ (16) is formed, and the 3rd group of row selecting transistor is made up of row selecting transistor CSQ (17) ~ CSQ (19).Three groups of row selecting transistors are controlled by zone-block selected transistor BSQ (1) ~ BSQ (3) respectively.The source electrode of zone-block selected transistor BSQ (1) be output control signal VAG ' (1) to the grid of all row selecting transistors of first group of row selecting transistor, the source electrode of zone-block selected transistor BSQ (2) and BSQ (3) is then exported control signal VAG ' (2) and VAG ' (3) grid to all row selecting transistors of second group and the 3rd group row selecting transistor respectively.
The source electrode of zone-block selected transistor BSQ (1) ~ BSQ (3) is to electrically connect with a current source respectively, and reception area block selection signal VAG (1) ~ VAG (3) is then distinguished in drain electrode, and grid is the control of suspension control signal VCS simultaneously then.Please also refer to Fig. 7, shown in it is the oscillogram in order to employed each signal of circuit of the Heater group of drive fluid injector head of present embodiment.When control signal VCS is activation, all conductings of zone-block selected transistor BSQ (1) ~ BSQ (3).And block selects signal VAG (1) ~ VAG (3) to be in the T3 respectively at T1, second phase T2 between the first phase and between the third phase activation to make first group of row selecting transistor CSQ (1) ~ CSQ (8), second group of row selecting transistor CSQ (9) ~ CSQ (16), the 3rd group of row selecting transistor CSQ (17) ~ CSQ (19) respectively at T1, second phase T2 and T3 conducting between the third phase between the first phase.So, address signal VA (1) ~ VA (8) is T1, second phase T2 and be sent to first group, second group and the 3rd group of row selecting transistor between the third phase in the T3 between respectively at the first phase.That is to say that 8 addressing electrodes are shared by three groups of row selecting transistors, so present embodiment also has the advantage that reduces required addressing electrode number.
Though present embodiment is to be metal-oxide semiconductor (MOS) (metal oxidesemiconductor with main transistor, MOS) transistor is that example is done explanation, yet the main transistor main transistor also can be reached by bipolarity junction transistor (Bi-polar Junction Transistor) or junction field effect transistor (JunctionField Effect Transistor).
The fluid ejecting head with the circuit that drives Heater group that the above embodiment of the present invention disclosed is penetrated ink droplet of uniform size except the above-mentioned spray orifice that makes, to promote the print quality of ink-jet printer, and can improve the service speed of fluid ejecting head and avoid outside the advantage of generation of false action, the present invention also has following several advantages:
(1) only need use the manufacturing that the NMOS manufacture craft is finished drive circuit, can be effectively with low production cost.
(2) use driving component (NMOS) to get rid of the residual charge of the grid of main transistor, compared to the fluid ejecting head of the snakelike resistance of use of No. the 5th, 604,519, United States Patent (USP) case shown in Figure 1, the present invention also has the advantage of saving area.
(3) the 5th, 604, No. 519 employed snakelike resistance of United States Patent (USP) case shown in Figure 1 are owing to directly touch silicon dioxide layer, and directly do not touch base material, so radiating efficiency is not good.And the driving component of the residual charge of the grid of getting rid of main transistor of the present invention is directly to touch base material, so have preferable radiating efficiency.
Though the present invention describes with reference to current specific embodiment, but those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, under the situation that does not break away from spirit of the present invention, also can make the variation or the replacement of various equivalences, therefore, as long as variation, the modification to the foregoing description all will drop in the scope of the application's claims in connotation scope of the present invention.
Claims (13)
1. one kind in order to drive the circuit of Heater group, and this Heater group has a primary heater and a secondary heater, and this circuit comprises:
One biasing selected unit is in order to produce one first control voltage and one second control voltage;
One first main transistor, be and this primary heater, one first current path polyphone, when this first main transistor is subjected to this first control control of voltage and during conducting, the resistance value of this first main transistor is to equal one first main transistor equivalent resistance, and allows one first electric current to flow through this primary heater, this first main transistor and this first current path; And
One second main transistor, be and this secondary heater, one second current path polyphone, when this second main transistor is subjected to this second control control of voltage and during conducting, the resistance value of this second main transistor is to equal one second main transistor equivalent resistance, and allowing one second electric current to flow through this secondary heater, this second main transistor and this second current path, this second current path is longer than this first current path;
Wherein, by adjusting this first control voltage and this second control voltage, change this first main transistor equivalent resistance and this second main transistor equivalent resistance respectively, and then change this first electric current and this second size of current respectively, make this primary heater equate with the heat that this secondary heater produces.
2. circuit as claimed in claim 1, it is characterized in that this biasing selected unit has one first row selecting transistor, one second row selecting transistor, one first current source and one second current source, this first row selecting transistor and this second row selecting transistor are in order to receive one first address signal and one second address signal respectively, this first current source is that the source electrode with this first row selecting transistor couples, this second current source is that the source electrode with this second row selecting transistor couples, the grid of this first row selecting transistor and this second row selecting transistor is to electrically connect, when this first address signal that drain electrode received of this first row selecting transistor conducting and this first row selecting transistor is activation, the source electrode of this first row selecting transistor is this first control voltage of output, when this second address signal that drain electrode received of this second row selecting transistor conducting and this second row selecting transistor is activation, the source electrode of this second row selecting transistor is this second control voltage of output, and this first control voltage and this second control voltage are the size of current that corresponds respectively to this first current source and one second current source.
3. circuit as claimed in claim 2 is characterized in that this first main transistor and this second main transistor are metal oxide semiconductor transistor, and this first main transistor equates with the ratio of passage length with the channel width of this second main transistor.
4. circuit as claimed in claim 2, it is characterized in that this primary heater equates with the resistance value of this secondary heater, this first current path is shorter than this second current path, make the equivalent resistance of the equivalent resistance of this first current path less than this second current path, and this first control voltage is less than the voltage level of this second control voltage, make this first main transistor equivalent resistance greater than this second main transistor equivalent resistance, make this first electric current equate with this second electric current.
5. circuit as claimed in claim 1 is characterized in that this biasing selected unit comprises:
One first row selecting transistor and one second row selecting transistor are in order to receive one first address signal and one second address signal respectively; And
The mirror of output end current more than comprises:
One reference current mirror transistor, this reference current mirror transistor drain and grid are to electrically connect;
One first current mirror transistor, the grid of this first current mirror transistor is to be coupled to the transistorized grid of this reference current mirror, the drain electrode of this first current mirror transistor is the source electrode that is coupled to this first row selecting transistor, and the drain electrode of this first current mirror transistor also is coupled to the grid of this first main transistor; And
One second current mirror transistor, the grid of this second current mirror transistor is to be coupled to the transistorized grid of this reference current mirror, the drain electrode of this second current mirror transistor is the source electrode that is coupled to this second row selecting transistor, and the drain electrode of this second current mirror transistor also is coupled to the grid of this second main transistor;
Wherein, when this first address signal that drain electrode received of this first row selecting transistor conducting and this first row selecting transistor is activation, the source electrode of this first row selecting transistor is this first control voltage of output, make this first main transistor conducting, when this second address signal that drain electrode received of this second row selecting transistor conducting and this second row selecting transistor is activation, the source electrode of this second row selecting transistor is this second control voltage of output, make this second main transistor conducting, this first control voltage and this second control voltage are to correspond respectively to the channel width of this first current mirror transistor and ratio and the channel width of this second current mirror transistor and the ratio of length of length;
Wherein, when this first main transistor is closed, the residual charge of the grid of this first main transistor is to get rid of via this first current mirror transistor, and when this second main transistor was closed, the residual charge of the grid of this second main transistor was to get rid of via this second current mirror transistor.
6. circuit as claimed in claim 5 is characterized in that, the grid of this first row selecting transistor is to be coupled to this reference current mirror transistor drain, and the grid of this second row selecting transistor is to be coupled to this reference current mirror transistor drain.
7. fluid ejecting head comprises:
One Heater group is to be arranged in the capable matrix of M row N, wherein i be listed as the capable heater of j be for heater (i, j), i be listed as the capable heater of k be for heater (i, k), M, N, i, j, k are positive integer, i is smaller or equal to M, and j is smaller or equal to N, and j is not equal to k; And
One drive circuit comprises:
Several current paths, each heater are and corresponding this current path electrically connects, described current path comprise a current path (i, j) and a current path (i, k);
One biasing selected unit in order to produce N control voltage, comprises a j control voltage and a k control voltage; And
M * N main transistor, (i is j) with main transistor (i to comprise a main transistor, k), (i j) is and this heater (i this main transistor, j) electrically connect, (i j) is subjected to this j the control control of voltage and conducting, and an electric current (i when this main transistor, j) produced and flow through this heater (i, j), this main transistor (i, j) and this current path (i is in the time of j), this main transistor (i, j) resistance value be equivalent to a main transistor equivalent resistance (i, j), this main transistor (i, k) be and this heater (i, k) electrically connect, (i k) is subjected to this k the control of controlling voltage and conducting when this main transistor, an and electric current (i, k) produced and flow through this heater (i, k), this main transistor (i, k) and this current path (i, k) time, this main transistor (i, resistance value k) be equivalent to a main transistor equivalent resistance (i, k);
Wherein, (i, j) (i is to correspond respectively to this j control voltage and this k control voltage k) to this main transistor equivalent resistance, makes that (i, j) (i, k) heat of Chan Shenging equates this heater with this heater with this main transistor equivalent resistance.
8. fluid ejecting head as claimed in claim 7, it is characterized in that this biasing selected unit has N row selecting transistor and N current source, the drain electrode of this N row selecting transistor is in order to receive several address signals respectively, this N row selecting transistor comprises delegation's selection transistor (j) and delegation's selection transistor (k), this N current source comprises a current source (j) and current source (k), described address signal comprises an address signal (j) and an address signal (k), this current source (j) is that the source electrode with this row selecting transistor (j) couples, this current source (k) is that the source electrode with this row selecting transistor (k) couples, and this row selecting transistor (j) is to electrically connect with the grid of this row selecting transistor (k);
When this address signal (j) that drain electrode received of (j) conducting of this row selecting transistor and this row selecting transistor (j) was activation, the source electrode of this row selecting transistor (j) was this j control of an output voltage;
When this address signal (k) that drain electrode received of (k) conducting of this row selecting transistor and this row selecting transistor (k) is activation, the source electrode of this row selecting transistor (k) is this k control of an output voltage, and this j control voltage and this k control voltage are the size of current that corresponds respectively to this current source (j) and this current source (k).
9. fluid ejecting head as claimed in claim 8, it is characterized in that this heater (i, j) with this heater (i, k) resistance value is equal, this current path (i, j) equivalent resistance is less than this current path (i, j) equivalent resistance, the size of current of this current source (j) is the size of current greater than this current source (k), makes the voltage level of this j control voltage less than this k control voltage, this main transistor equivalent resistance (i, j) be that (i k), makes this electric current (i greater than this main transistor equivalent resistance, j) (i k) equates with this electric current.
10. fluid ejecting head as claimed in claim 8, it is characterized in that this biasing selected unit also has S addressing electrode, in order to receive S address signal, this N row selecting transistor is to be divided into the P group, every group of row selecting transistor is to have S row selecting transistor at the most, every group of row selecting transistor controlled by a zone-block selected transistor, and this S addressing electrode is to electrically connect with this P group row selecting transistor;
When the conducting of one of described zone-block selected transistor, all row selecting transistors of this corresponding group row selecting transistor are conductings, and this S address signal is the drain electrode that is sent to this row selecting transistor of corresponding conducting.
11. fluid ejecting head as claimed in claim 7 is characterized in that this biasing selected unit comprises:
N row selecting transistor comprises delegation's selection transistor (j) and delegation's selection transistor (k), in order to receive an address signal (j) and an address signal (k) respectively; And
The mirror of output end current more than comprises:
One reference current mirror transistor, this reference current mirror transistor drain and grid are to electrically connect;
One current mirror transistor (j), the grid of this current mirror transistor (j) is to be coupled to the transistorized grid of this reference current mirror, the drain electrode of this current mirror transistor (j) is the source electrode that is coupled to this row selecting transistor (j), and the drain electrode of this current mirror transistor (j) also is coupled to the grid of this main transistor (j); And
One current mirror transistor (k), the grid of this current mirror transistor (k) is to be coupled to the transistorized grid of this reference current mirror, the drain electrode of this current mirror transistor (k) is the source electrode that is coupled to this row selecting transistor (k), and the drain electrode of this current mirror transistor (k) also is coupled to the grid of this main transistor (k);
Wherein, when this address signal (j) that drain electrode received of (j) conducting of this row selecting transistor and this row selecting transistor (j) is activation, the source electrode of this row selecting transistor (j) is this j control of an output voltage, make this main transistor (j) conducting, when this address signal (k) that drain electrode received of (k) conducting of this row selecting transistor and this row selecting transistor (k) is activation, the source electrode of this row selecting transistor (k) is this k control of an output voltage, make this main transistor (k) conducting, this j control voltage and this k control voltage are to correspond respectively to the channel width of this current mirror transistor (j) and ratio and the channel width of this current mirror transistor (k) and the ratio of length of length;
Wherein, when this main transistor (j) when being closed, the residual charge of the grid of this main transistor (j) is to get rid of via this current mirror transistor (j), and when this main transistor (k) when being closed, the residual charge of the grid of this main transistor (k) is to get rid of via this current mirror transistor (k).
12. fluid ejecting head as claimed in claim 11 is characterized in that, the grid of this row selecting transistor (j) is to be coupled to this reference current mirror transistor drain, and the grid of this row selecting transistor (k) is to be coupled to this reference current mirror transistor drain.
13. fluid ejecting head as claimed in claim 7, it is characterized in that, this fluid ejecting head also comprises a base material, this base material has M * N manifold, M * N fluid cavity and M * N spray orifice, one end of each described manifold is to be formed on a lower surface of this base material, each described fluid cavity is the top that is disposed at this corresponding manifold, and be communicated with corresponding this manifold, described fluid cavity is in order to hold a fluid, described spray orifice is to be arranged in the capable matrix of M row N, each described spray orifice is the top that is disposed at this corresponding fluid cavity, one end of each described spray orifice is to be formed on the upper surface of this base material, and described heater is to be disposed at this corresponding spray orifice side, when one of described heater produces heat, this corresponding spray orifice is to produce bubble, so that this fluid ejection in this corresponding fluid cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100304022A CN1326697C (en) | 2004-03-17 | 2004-03-17 | Fluid jet head with circuit to drive heater set |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100304022A CN1326697C (en) | 2004-03-17 | 2004-03-17 | Fluid jet head with circuit to drive heater set |
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| Publication Number | Publication Date |
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| CN1669797A CN1669797A (en) | 2005-09-21 |
| CN1326697C true CN1326697C (en) | 2007-07-18 |
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| CNB2004100304022A Expired - Fee Related CN1326697C (en) | 2004-03-17 | 2004-03-17 | Fluid jet head with circuit to drive heater set |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2342082B1 (en) * | 2008-10-31 | 2013-12-18 | Hewlett-Packard Development Company, L.P. | Thermal fluid-ejection device die |
| CN102463753B (en) * | 2010-11-10 | 2014-01-08 | 研能科技股份有限公司 | Ink jetting unit group |
| JP6882861B2 (en) * | 2016-07-14 | 2021-06-02 | キヤノン株式会社 | Semiconductor devices, liquid discharge heads, liquid discharge head cartridges and recording devices |
| KR102659138B1 (en) | 2016-10-19 | 2024-04-22 | 시크파 홀딩 에스에이 | Method of forming a thermal inkjet printhead, thermal inkjet printhead, and semiconductor wafer |
| CN110658883A (en) * | 2018-06-29 | 2020-01-07 | 深圳市天合顺微电子有限公司 | Multi-path equal-power parallel circuit system and application thereof |
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|---|---|---|---|---|
| CN1103029A (en) * | 1993-07-14 | 1995-05-31 | 精工爱普生株式会社 | Inkjet recording apparatus having an electrostatic actuator and method of driving it |
| US5604519A (en) * | 1992-04-02 | 1997-02-18 | Hewlett-Packard Company | Inkjet printhead architecture for high frequency operation |
| US5734391A (en) * | 1993-12-28 | 1998-03-31 | Canon Kabushiki Kaisha | Printing system |
| CN1430553A (en) * | 2001-01-30 | 2003-07-16 | 惠普公司 | Energy balanced printhead design |
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2004
- 2004-03-17 CN CNB2004100304022A patent/CN1326697C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5604519A (en) * | 1992-04-02 | 1997-02-18 | Hewlett-Packard Company | Inkjet printhead architecture for high frequency operation |
| CN1103029A (en) * | 1993-07-14 | 1995-05-31 | 精工爱普生株式会社 | Inkjet recording apparatus having an electrostatic actuator and method of driving it |
| US5734391A (en) * | 1993-12-28 | 1998-03-31 | Canon Kabushiki Kaisha | Printing system |
| CN1430553A (en) * | 2001-01-30 | 2003-07-16 | 惠普公司 | Energy balanced printhead design |
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