CN1326588A - Carrier for cleaning silicon wafers - Google Patents
Carrier for cleaning silicon wafers Download PDFInfo
- Publication number
- CN1326588A CN1326588A CN99812346A CN99812346A CN1326588A CN 1326588 A CN1326588 A CN 1326588A CN 99812346 A CN99812346 A CN 99812346A CN 99812346 A CN99812346 A CN 99812346A CN 1326588 A CN1326588 A CN 1326588A
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- Prior art keywords
- wafer
- vessel
- bar
- sidewall
- wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A carrier for receiving and holding a plurality of semiconductor wafers and permitting surfaces of the wafers to receive maximum exposure to ultrasonic waves during a wafer cleaning process in which the carrier and the wafers are immersed in a liquid medium and ultrasonic waves are generated in the liquid medium. The carrier includes spaced apart sidewalls and horizontal rods that interconnect the sidewalls and that are collectively positioned for supporting wafers in generally upright, face to face position generally parallel to each other. The rods are positioned in spaced relationship relative to each other so that wafers are exposed to the liquid medium and ultrasonic waves between the rods. The sidewalls are sized to have a maximum height that is less than about half of a wafer diameter. The carrier is adapted to hold wafers to permit generally unobstructed passage of ultrasonic waves through the liquid medium to reach all portions of wafer surfaces with minimal impedance by structure of the carrier, thereby facilitating effective cleaning. A stabilizing rod extends horizontally between central areas of the sidewalls for limiting wafer motion relative to the carrier to steady the wafers.
Description
The present invention relates generally to the cleaning of semiconductor wafer, be specifically related to be used for to keep a plurality of wafers can be exposed to vessel under the ultrasonic wave simultaneously to greatest extent.
The semiconductor wafer of microelectronic industry at first is that the silicon wafer ingot is cut into thin wafer aborning.After the section, wafer is made milled processed, the thickness that makes them is homogeneous roughly.Again wafer is carried out etching and produce smooth surface to remove defective.Last operation is a polished wafer, makes and form highly reflective and flawless surface on the one side at least of each wafer.These wafers grind and the etching two procedures between must clean, for example to remove pollutant such as abrasive particle.If cleaning process is not very effective, the surface of wafer will be thin abrasive particle residual contaminants.The abrasive particle of this class remnants will pollute problem in the electric device manufacture process.
The cleaning of wafer normally is immersed in them and is exposed to ultrasonic wave in the liquid medium simultaneously and gets off to carry out.At first each wafer is placed box or vessel, this box or vessel are taken in down a plurality of wafers and they are held in the erect form of parallel partitioned arrangement.This vessel that is loaded with wafer is placed rinse bath, is immersed in the fluid that contains etchant solution, with or remove to disperse foul without surfactant.To be arranged in the ultrasonic wave that the supersonic generator of bottom of rinse bath sends and be incorporated into this liquid medium.Abrasive particle on the wafer surface or other pollutants are removed by being exposed under the ultrasonic wave.Then this vessel is inserted and use the deionized water rinsing wafer in the flushed channel, at last with the IPA vapor drying crystal wafer.
Above-mentioned vessel must limit the vibration of wafer in order to avoid cause damage.When vessel moves, in the time of for example in dropping it off rinse bath, these wafers might collide in vessel or conflict mutually, form breach or crackle.In order to prevent this class breakage, the vessel attempt of prior art can keep wafer once to be designed to very big structure under the mode of safety.In this class vessel some has many fossulas that are used for admitting and keeping the wafer perimeter zone.Every fossula is along the signal portion extension on wafer week edge, for example near the position bottom of wafer upwards up to its top 1/3.
A major issue in the above-mentioned cleaning process is, the some parts that vessel can hinder wafer suitably is exposed under the ultrasonic wave, and how much the vessel of prior art is huge being used for the structure of wafer supporting in fossula if having.This structure stop or overslaugh ultrasonic wave be distributed in the whole liquid medium, thereby the All Ranges that has also just stoped ultrasonic wave to arrive wafer goes to clean it with enough intensity.Particularly because ultrasonic wave was stopped just that before the top that arrives rinse bath the top of wafer surface is usually cleaned insufficiently and kept some harmful particulate pollutions.Like this, the cleaning of wafer is inhomogenous.In addition, the structure of above-mentioned vessel even can obstruct the drying of wafer surface.The surrounding zone that accommodates the wafer in fossula not by dry fully, formed watermark and has caused the decline of wafer quality in the dry run of isopropyl alcohol.
Can be pointed out that, among some purposes of the present invention and characteristics: the vessel that is used for containing and keeping the polylith semiconductor wafer is provided; The vessel that all parts of wafer surface can fully be cleaned in the ultrasonic wave radiation treatment is provided; The vessel that can prevent damage wafers when moving or vibrate is provided; The evenly vessel on drying crystal wafer surface is provided, and wieldy vessel is provided.
Briefly, vessel of the present invention can contain and keep many wafers, have in hyperacoustic clean wafers process it and a plurality of semiconductor wafer being immersed in the liquid medium and in liquid medium, producing, can allow the surface of each wafer to be exposed to greatest extent under the ultrasonic wave radiation, be used for keeping the size of this vessel of wafer to be determined by the diameter of wafer, comprise the sidewall and the some horizon bars that separate mutually, these horizon bars are positioned to be used for each wafer supporting is become roughly setting, the face-to-face position that roughly is parallel to each other together.Each bar extends between sidewall and interconnects with sidewall, and these bars are located with separated relation, make wafer can be exposed in the liquid medium between the bar with ultrasonic wave under, the orientation of each sidewall makes vessel can be used for wafer is kept roughly and parallel sidewalls.The selected size of sidewall makes its maximum height approximately less than wafer diameter partly, so that allow maintain wafer vessel in being immersed in liquid medium the time first half of each wafer be exposed to liquid medium, thereby this vessel is fit to keep wafer in this wise: can make ultrasonic wave only be subjected to the minimum impedance influence of this vessel structure, general do not arrive all parts of wafer surface by liquid medium with not being obstructed, help effective cleaning thus.
On the other hand, vessel of the present invention can contain and keep a plurality of semiconductor wafers.Have in hyperacoustic clean wafers process this vessel and wafer being immersed in the liquid medium and in liquid medium, producing, can allow the surface of each wafer to be exposed to greatest extent under the ultrasonic wave radiation.The size that is fit to this vessel of maintenance wafer is determined by the diameter of wafer.Such vessel comprises two mutually separated upright side walls and three horizon bars of separating the location, and they are used for wafer supporting is become the relation of mutual almost parallel.At least on a bar, be provided with the tooth that a column split is opened.Limit the peripheral part that a roughly V-shaped fossula contains wafer between every pair of adjacent tooth, be used for making wafer in vessel, to remain in the position that separates mutually with respect to other wafers.
Other purposes of the present invention and characteristics will partly be come to understand afterwards, partly will give to point out.
Fig. 1 is the top plan view of clean wafers of the present invention with vessel;
Fig. 2 is the end view of this vessel;
Fig. 3 is the end-view of this vessel;
Fig. 4 is the profile that intercepts along in the 4-4 line plane among Fig. 1, and the wafer that imaginary vessel thus keeps is shown;
Fig. 5 is the profile that intercepts along in the plane of 5-5 line among Fig. 1; And
Fig. 6 is the profile that intercepts along in the plane of 6-6 line among Fig. 1.
In above all accompanying drawings, refer to corresponding parts with corresponding label.
Now referring to accompanying drawing,, wherein be used for containing and keep the vessel of polylith semiconductor wafer generally to show with 10 especially referring to Fig. 1 and 4.Vessel 10 has in hyperacoustic wafer cleaning process in that it and wafer are immersed in to produce in the liquid medium and in this liquid medium in the rinse bath, and wafer W is exposed under the ultrasonic wave to greatest extent.
Vessel 10 comprises a framework, and this framework has two parallel sidewalls that separate mutually 14 and several to extend between this two side and perpendicular to the horizon bar 16 of this sidewall orientation.The outer wall 18 that separates is mutually with it arranged outside sidewall 14.Each sidewall is related with an outer wall.There are two end pieces parallel with horizon bar 20 that separate mutually in the outside of horizon bar 16, and they are positioned at the place, opposite end of vessel both sides.In plane graph shown in Figure 1, outer wall 18 and end pieces 20 limit the periphery of this vessel structure.All parts of vessel 10 all have fillet usually.
Each sidewall 14 has maximum height and in trend its end 22,24 o'clock highly decrescence in the middle, as shown in Figure 4.In best form of implementation, the top edge 26 of each sidewall has the shape that is similar to down shell of slow dimpling.Thisly be shaped as both solid and the little vessel structure of surface area provides effective supporting.Above-mentioned two sidewalls generally are of similar shape and size.
Its size range of maximum height H of each sidewall 14 of determining this vessel height is for will be by 1/4～1/2 of the diameter of the wafer W that vessel kept.In fact, the sidewall in this altitude range has shown to have good vessel stability and maintain little surface area at large.The less surface area of comparing with the prior art vessel has just guaranteed that the first half of each wafer is exposed in the liquid medium when the vessel that keeps wafer is immersed in the liquid medium.This vessel 10 can allow ultrasonic wave under the maximum impedance of vessel structure, general all parts that unhinderedly arrive wafer surface by liquid medium, thus promoted effective cleaning.
The length L of each sidewall 14 is defined as being slightly less than the diameter of the wafer W that vessel keeps.In best form of implementation, this sidewall length be wafer diameter at least 90% and be more preferably its 94%.If this sidewall length is significantly less than 90% wafer diameter, this vessel might be unstable, and if it greater than 100% wafer diameter, vessel just will heavily arrive unnecessary degree.
Vessel 10 has 4 pillars 30 that it is bearing on its lower surface, for it provides stability.Extended two pillars have identical length from the bottom of each sidewall 14, in order to vessel is supported along horizontal alignment.These 4 pillars are done to be provided with symmetrically with respect to the center of vessel.
Shown in Fig. 2 and 3, two outer walls 18 roughly are parallel to sidewall 14 along the first half of vessel to be aimed at, and is positioned at outside the sidewall 14 and separates, and is connected on the sidewall 14 by isolating rib 32.In each outer wall 18 3 holes 34 are arranged so that vessel lightweight as much as possible, each hole has and the vessel profile is concordant is convenient to the economic simple shape of making.In this best form of implementation, above-mentioned 3 holes make the area of each outer wall 18 reduce 35%～55%.
The shape that the periphery 36 in each hole 34 is got makes and does not have the horizontal surface that may collect liquid and hinder finish-drying along this periphery.On the contrary, this periphery 36 is got the profile that reduces gradually towards the direction that is separated from vessel, so that from then on liquid flow away at the edge, the cone angle of this convergent is 15～60 ° and is preferably 30～45 °.Other surfaces of vessel 10 comprise each outer wall 18 and top perimeter each sidewall 14, get similar inclination form and gather or hold and stay with liquid proof.
The end pieces 20 of extending between two side 14 has formed with hand and has lifted the handle of vessel or be used for gripping handle with supporting by the arm end operating device.End pieces 20 has the bottom of rounding so that grip, and is hollow and alleviated the weight of vessel simultaneously.As shown in Figure 2, each sidewall 14 comprises near the nose 38 that is positioned at each end pieces, can make the arm end operating device can be from sidewall or end pieces slippage when lifting vessel.
As shown in Figure 4, each cramp bar 40 together with separated relation determine one section with each wafer W on the corresponding arc 44 of an arcuate perimeter section.The contact point of the bar 40 of arc 44 farthest, the left side in wafer W and Fig. 4 and wafer extend between the contact point of the bar 40 of farthest, the right among the figure therewith.Arc 44 is also crossing with other bar 40.For the determined arc 44 of these bars corresponding to comprise the wafer W whole circumference at least about 2/7 arc section of 2/5 preferably.Above-mentioned each cramp bar 40 determined segmental arc, preferably in the transportation of wafer and ultrasonic cleaning for keeping it to stablize the segmental arc of required minimum length.Cramp bar 40 shown in the accompanying drawing is done the roughly arrangement of symmetry with respect to the center of vessel 10 with uniform interval.Other positioning forms of these bars comprise asymmetrical interval, also do not depart from the scope of the present invention.
The the 1st and the 2nd bar in the cramp bar 40 is to extend between the position on each, two side 14 near the end 22,24, and the 3rd is to extend between the position that roughly inwardly separates from end 22,24 on the two side 14 with the 4th bar.On at least one cramp bar 40, be provided with the tooth 50 that row separate mutually.In this best form of implementation, tooth 50 is positioned on the 1st and the 2nd bar, and the 3rd and the 4th bar is then anodontia.Should know to have other combining forms, for example has only a bar or all bars have tooth.This row tooth 50 is to distribute on the whole length of each cramp bar 40 that tooth is arranged basically.Should know only on the part of this bar, have tooth also not depart from the scope of the present invention.
Adjacent paired tooth 50 defines as unified with the 52 V-arrangement fossulas of indicating that are used to contain wafer perimeter portion among Fig. 5.Each fossula 52 be fit to accommodate wafer W periphery so that this wafer remain in the separated position with respect to other wafers in the vessel.Tooth 50 has the gradient or the gradient of general conical, and 35～50 ° constant included angle A is arranged.The tooth tip 54 best roundings of each tooth are so that insert wafer in the fossula 52 and avoid because of carelessness collision tooth tip damage wafers.
The 5th horizon bar comprises stable with bar 42, and its restriction wafer is used for stablizing any vibration of wafer and keeps wafer on the throne with respect to the motion of vessel.This stablizes with bar 42 and is extending perpendicular to sidewall 14 and between the close position at each sidewall center.Should know that this stable can being positioned at along any position of vessel 10 with bar does not depart from the scope of the present invention.The stable tooth 56 that has row to separate mutually with bar 42 is determined the peripheral part that generally is used for accommodating wafer among Fig. 6 with the 58 Y shape paddy of indicating between each two adjacent teeth.The size and shape of each paddy 58 is selected to wafer is loosely accommodated wherein.The edge 60 of stablizing the approximate vertical that has with the tooth on the bar 42 56 has formed the side of above-mentioned paddy, and the dual-side of each paddy is to separate abreast greater than the interval S that accommodates wafer thickness wherein.The interval S that each paddy dual-side is separated is more preferably greater than wafer thickness about 10%～about 20%.Each wafer hangs on the top at the end 62 of paddy 58, and removing non-vibration or mismatch is not contact with tooth 56.The lowest point 62 is concordant, but for normal effectiveness of the present invention and nonessential be concordant.The shape that each paddy 58 is got can make wherein wafer, and (on this position, wafer hangs in the paddy in normal place; Be held in basically and with the tooth on the bar 42 56 any contact do not arranged with stable) and inflection point (on this position, wafer is at these each side 60 places and stablize and touch with a toe joint on the bar 42, in case wafer further does to vibrate deflection) between make oscillating movement.Stable have the gradient or the gradient of general conical with the tooth on the bar 56, and 35～50 ° constant included angle B is arranged.The tooth tip 64 best roundings of each tooth are in order to avoid wafer is caused injury when going up the tooth tip because of negligence of operation collision.
Vessel 10 is the single-piece molded structure.Material be to the compound effects in the cleaning solution and to the influence of high temperature be substantially inertia and stabilized resins, thereby can not damage, be out of shape or softening being exposed to compound and high temperature following time.In this best form of implementation, this vessel is to form by fluoro resin such as PFA or PTFE or by other resin such as PEEK or PBT.
In the operation, place vessel 10 to clean many wafer W to remove trickle grit and abrasive particle residue.Every wafer will make its edge contact simultaneously and cramp bar 40 corresponding 4 contact points (Fig. 4) when inserting, to support this wafer.These 4 points be included in the 1st with the 2nd bar on do not have tooth on two points combining with V-arrangement fossula 52 among Fig. 5 of Waffer edge and the 3rd and the 4th bar and to two points of wafer at its edge upper support.The a bit of peripheral part of each wafer accommodate simultaneously in stable with two adjacent teeth on the bar 42 between one of in the Y shape paddy 58 (Fig. 6), wafer this hang on the lowest point 62 above.Can or grip end pieces 20 with hand and lift this vessel by the arm end operating means.Vessel is transported in the rinse bath, and any vibration of wafer is limited with the tooth 56 on the bar 42 by stable in the transportation.The vessel 10 that is loaded with wafer is dipped in the liquid medium of compound solution for example, normally produces ultrasonic wave in the rinse bath on bottom land.Because vessel 10 has low outstanding degree and minimum body structure, this ultrasonic wave will can not hinder for the top of vessel, thereby arrive all parts of wafer surface.This vessel and wafer are with deionized water rinsing and with the IPA vapor drying then.Owing to be that wafer is supported by slit with a contact supporting rather than some other vessel in prior art here, do not accumulate liquid and hinder dry part with regard to not having.Therefore, this vessel is can be drier and be suppressed at and form watermark or similar other vestiges on the wafer surface.
Like this, vessel 10 of the present invention can contain and keep many semiconductor wafers and can make all parts of wafer surface obtain to clean fully and dry uniformly.This vessel also can prevent damage wafers when it moves or vibrates.
From as can be known above-mentioned, aforementioned several purposes of the present invention reach, and have obtained other useful result simultaneously.
During parts in introducing of the present invention or its best form of implementation, the article that relates to " ", " this " and " described " are to be used for showing one or more of this kind parts.Again, wherein used speech " comprises ", " having " etc. is as the meaning that includes, and promptly means the parts that other are still arranged except that listed parts.
Owing to during not departing from the scope of the present invention, can make all changes to the above, thus should the above and full content shown in the drawings regard as the property illustrated but not limited significance.
Claims (20)
1. can contain and keep the vessel of many semiconductor wafers, have in hyperacoustic clean wafers process this vessel and wafer being immersed in the liquid medium and in this liquid medium, producing, can allow the surface of each wafer to be exposed under the ultrasonic wave to greatest extent, this vessel is fit to keep size by the determined wafer of wafer diameter, and this vessel comprises: the sidewall that separates mutually; And some horizon bars, these horizon bars are positioned to be used for wafer supporting is become roughly to erect together, almost parallel mutually Face to face, each bar extends between this two side and interconnects with sidewall, these bars are spaced from each other and are positioned to make the ultrasonic wave of wafer exposure between above-mentioned liquid medium and described bar
The orientation of above-mentioned two side can make this vessel be fit to wafer is held in and the sidewall almost parallel, the size of these sidewalls is chosen to be and makes its maximum height approximately less than wafer diameter partly, so that when being loaded with the vessel of described wafer and being immersed in the liquid medium, the first half of each wafer is exposed in the liquid medium, thereby this vessel can be used to wafer is held in, make ultrasonic wave only be subjected to the minimum impedance influence of this vessel structure, general do not arrive all parts of wafer surface by liquid medium with not being obstructed, help thus to clean effectively.
2. the described vessel of claim 1, wherein each described sidewall generally is to have maximum height in the middle, and along two opposite ends of both sides trend sidewall the time highly decrescence.
3. the described vessel of claim 2, wherein the upper periphery that has of each described sidewall is determined the roughly convex of this sidewall.
4. the described vessel of claim 3, wherein the height of each described sidewall is about 1/4～about 1/2 of a wafer diameter.
5. the described vessel of claim 4, wherein said two side are generally aimed at and are had an essentially identical size and shape.
6. the described vessel of claim 1, wherein said some horizon bars together with the relation of separating mutually be positioned to determine one section with each wafer on one section corresponding arc of arcuate perimeter, these bars are adapted at combining with wafer along the some place of the arcuate perimeter of wafer.
7. the described vessel of claim 6, wherein at least one of described bar, also comprise the tooth that row separate mutually, each adjacent tooth is to being fit to admit the peripheral part of wafer, in order to this wafer is held in the location that separates mutually with respect to other wafers works in this vessel.
8. the described vessel of claim 7, wherein said adjacent tooth are got the V-arrangement fossula that shape is fit to be used for installing the wafer perimeter part to defining.
9. the described vessel of claim 7, wherein said bar has 4 at least, comprises two bar and two bars that bar is anodontia that tooth is arranged.
10. the described vessel of claim 1, wherein said horizon bar comprises cramp bar, also comprise at least one stable bar of using simultaneously, the latter flatly extends between the central area of two side, with respect to the motion of this vessel and the stable wafer of living, this is stable gets direction perpendicular to described sidewall with bar in order to the restriction wafer.
11. the described vessel of claim 10, wherein stable also comprise the tooth that row separate mutually on bar described, and on this stablizes with bar, be formed with the paddy that is used for accommodating wafer between per two adjacent teeth, the size and shape of each paddy is selected to wafer is loosely accommodated in wherein, so that wafer does not wherein have any nominal position that contacts in fact and touches in case this wafer further vibrates between the inflection point of deflection with should stablizing with a toe joint on the bar in described paddy one side with the tooth on the bar being supported to by cramp bar with stable, make oscillating movement.
12. can contain and keep the vessel of many semiconductor wafers, have in hyperacoustic clean wafers process this vessel and wafer being immersed in the liquid medium and in this liquid medium, producing, can allow the surface of each wafer to be exposed under the ultrasonic wave to greatest extent, this vessel is fit to keep the size wafer definite by wafer diameter, and this vessel comprises: two upright side walls of separating mutually; At least three with phase apart relation location in order to wafer supporting is become to be in the horizon bar of almost parallel relation, each horizon bar extends between the two side; And the tooth that separates mutually of row at least one of above-mentioned bar, each adjacent tooth is to determining roughly V-shaped fossula betwixt in order to accommodate the peripheral part of wafer, this wafer is held in respect to other wafers in the vessel does the location that separates mutually.
13. the described vessel of claim 12, wherein said horizon bar comprise cramp bar and at least one stable bar of using, this stablizes with bar and flatly extends between this two side with the motion of restriction wafer with respect to described vessel, and makes wafer stable.
14. the described vessel of claim 13 wherein saidly stable is formed with the paddy that is used to install wafer with the tooth that comprises on the bar that row separate mutually between two adjacent teeth, the size and shape of each paddy is specified to wafer is loosely accommodated in wherein.
15. the described vessel of claim 14, the wherein said stable edge that has an approximate vertical with the tooth on the bar has formed the side of above-mentioned paddy, and the dual-side of each paddy becomes parallel relation of separating, and the spacing of being separated surpasses the thickness of the wafer that accommodates between paddy.
16. the described vessel of claim 15, the spacing that dual-side separated of wherein said each paddy is greater than the thickness of described wafer about 10%～about 20%.
17. the described vessel of claim 12, wherein said each horizon bar together with the relation of separating mutually be positioned to determine one section with each wafer on one section corresponding arc of arcuate perimeter, these bars are adapted at along combining with wafer on the point of the arcuate perimeter of wafer.
18. the described vessel of claim 17, wherein said bar has 4 at least, comprises that two bars have bar and two anodontia bars of tooth.
19. the described vessel of claim 12, wherein each described sidewall generally is to have maximum height in the middle, and its during along two opposite ends of both sides trends sidewall highly decrescence.
20. the described vessel of claim 12, wherein each described sidewall is sized to and makes its tool maximum height approximately less than wafer diameter partly.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP297290/1998 | 1998-10-19 | ||
| JP10297290A JP2000124183A (en) | 1998-10-19 | 1998-10-19 | Silicon wafer cleaning carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1326588A true CN1326588A (en) | 2001-12-12 |
Family
ID=17844608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99812346A Pending CN1326588A (en) | 1998-10-19 | 1999-10-15 | Carrier for cleaning silicon wafers |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1138061A2 (en) |
| JP (1) | JP2000124183A (en) |
| KR (1) | KR20010075619A (en) |
| CN (1) | CN1326588A (en) |
| TW (1) | TW558760B (en) |
| WO (1) | WO2000024041A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157364A (en) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | Scribe-line draining during wet-bench etch and clean processes |
| CN101090084B (en) * | 2006-06-02 | 2011-12-07 | 罗门哈斯电子材料有限公司 | Apparatus with filet radius joints |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100857938B1 (en) * | 2001-09-27 | 2008-09-09 | 신에츠 폴리머 가부시키가이샤 | Transport container and storage method of back ground wafers |
| US6845779B2 (en) * | 2001-11-13 | 2005-01-25 | Fsi International, Inc. | Edge gripping device for handling a set of semiconductor wafers in an immersion processing system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2513843B2 (en) * | 1989-06-20 | 1996-07-03 | 富士通株式会社 | Board holder |
| JP2609815B2 (en) * | 1994-07-22 | 1997-05-14 | 九州日本電気株式会社 | Wet processing equipment |
| JPH10223585A (en) * | 1997-02-04 | 1998-08-21 | Canon Inc | Device and method for treating wafer and manufacture of soi wafer |
-
1998
- 1998-10-19 JP JP10297290A patent/JP2000124183A/en not_active Withdrawn
-
1999
- 1999-10-15 CN CN99812346A patent/CN1326588A/en active Pending
- 1999-10-15 EP EP99970786A patent/EP1138061A2/en not_active Withdrawn
- 1999-10-15 WO PCT/US1999/024203 patent/WO2000024041A1/en not_active Application Discontinuation
- 1999-10-15 KR KR1020017004549A patent/KR20010075619A/en not_active Application Discontinuation
- 1999-12-07 TW TW088118050A patent/TW558760B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101090084B (en) * | 2006-06-02 | 2011-12-07 | 罗门哈斯电子材料有限公司 | Apparatus with filet radius joints |
| CN102157364A (en) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | Scribe-line draining during wet-bench etch and clean processes |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010075619A (en) | 2001-08-09 |
| WO2000024041B1 (en) | 2000-06-29 |
| EP1138061A2 (en) | 2001-10-04 |
| TW558760B (en) | 2003-10-21 |
| JP2000124183A (en) | 2000-04-28 |
| WO2000024041A1 (en) | 2000-04-27 |
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