CN1324647C - A contamination sampling process inside carrier of semiconductor wafer - Google Patents
A contamination sampling process inside carrier of semiconductor wafer Download PDFInfo
- Publication number
- CN1324647C CN1324647C CNB031250270A CN03125027A CN1324647C CN 1324647 C CN1324647 C CN 1324647C CN B031250270 A CNB031250270 A CN B031250270A CN 03125027 A CN03125027 A CN 03125027A CN 1324647 C CN1324647 C CN 1324647C
- Authority
- CN
- China
- Prior art keywords
- toolroom
- contamination
- contamination sampling
- semiconductor wafer
- sampling method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005070 sampling Methods 0.000 title claims abstract description 44
- 238000011109 contamination Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000012530 fluid Substances 0.000 claims abstract description 22
- 238000000605 extraction Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 47
- 238000005516 engineering process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000029058 respiratory gaseous exchange Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention discloses a contamination sampling method for the interior of a semiconductor wafer carrying tool. The method comprises the steps that firstly, a tool chamber is arranged in a clean chamber; secondly, the semiconductor wafer carrying tool is arranged and fixed in the tool chamber; finally, at least one nozzle is used for uniformly spraying extracted fluid on the interior surface of the semiconductor wafer carrying tool and collecting the extracted fluid.
Description
Technical field
The invention provides the contamination sampling method of a kind of semiconductor wafer carrier inside, refer to a kind of 12 cun wafer handling boxes (Front Opening Unified Pod, FOUP) Nei Bu contamination sampling method especially.
Background technology
Economical along with the progress of semiconductor industry technology and considering of economic benefit, the diameter of wafer is also marched toward 12 cun from 8 cun of past.For alleviate the labour and make wafer can be safely, do not have wearing and tearing, a free of contamination transmission, wafer handling box (the Front OpeningUnfied Pod that present 12 cun wafer factories generally adopt the front to open, FOUP) as chip carrier (wafer carrier), and the area of dust free room has not only been saved in the use of FOUP, simultaneously also can be used for depositing wafer temporarily, therefore have the characteristics of operability and interchangeability.
Please refer to Fig. 1, Fig. 1 is the schematic diagram of traditional 12/8 cun wafer handling box 10.As shown in Figure 1,12/8 cun wafer handling box 10 can load about 25 wafer 12, a side ancient piece of jade, round, flat and with a hole in its centre that transmits box 10 is provided with a plurality of breathing filter screens (breathing filter) 14, and the main function of wafer handling box 10 is along with different fabrication schedules are transported to each board with wafer 12.Because 12/8 cun wafer needs approximately through 300 to 600 road technologies, for example photoetching process and ion implantation technology or the like, therefore after completing, cause most probably and transmit box 10 inwall chemical contaminations, and the chemical pollutant that transmits box 10 inside can pollute the wafer 12 of loading, and then the phenomenon of generation self-contamination (self-contamination), therefore must do sampling analysis to the contamination that transmit in the box 10, with the self-contamination situation of grasping wafer and set up pollution level and product percent of pass between relation.
12 cun traditional wafer handling box contamination sampling methods are directly injected deionized water and are transmitted in the box, soak to take out afterwards in 24 hours and carry out sampling analysis, yet existing method is not set up complete sampling routine of a cover and sampling environment, thereby has a strong impact on the accuracy and the confidence level of sampled result.
Summary of the invention
Main purpose of the present invention is to provide a kind of method of sampling of semiconductor wafer carrier internal contamination, can solve above-mentioned prior art problems.
The method of sampling according to semiconductor wafer carrier internal contamination of the present invention, this method comprises the method for sampling with a kind of semiconductor wafer carrier internal contamination, this method comprises a toolroom (toolchamber) is placed a clean room, then this semiconductor wafer carrier is placed and be fixed in this toolroom inside, utilizing at least one nozzle will extract fluid at last, evenly to be sprayed to the inside of this semiconductor wafer carrier surperficial and collect this extraction fluid.
The contamination sampling method of semiconductor wafer carrier of the present invention provides a clean room that includes chemical filter unit and particle filter earlier, to place this clean room through cleaning and dry toolroom then, at last this semiconductor wafer carrier is placed and be fixed in this toolroom, and utilize a nozzle evenly to spray the extraction fluid so that this semiconductor wafer carrier is carried out contamination sampling.Compare with the contamination sampling method of conventional semiconductors chip carrier, the inventive method comprises complete sampling routine and sampling environment, so sampled result has higher accuracy and confidence level.
Description of drawings
Fig. 1 is the schematic diagram of 12 cun wafer handling boxes of tradition; And
Fig. 2 to Fig. 3 is the contamination sampling method schematic diagram of semiconductor wafer carrier of the present invention.
Wherein, description of reference numerals is as follows:
10 12 cun wafer handling box 12 wafers
14 breathe filter screen 20 clean rooms
22 fans, 24 chemical filter screens
26 very-high performance screen packs, 28 toolrooms
3212/8 cun wafer handling box of 30 baffle plates
34 nozzles, 36 inclined-planes
Embodiment
The invention provides a kind of method of sampling of semiconductor wafer carrier internal contamination, as shown in Figure 2, this method provides a clean room (clean room) 20, and clean room 20 includes a fan 22, one usefulness removes the chemical filter screen 24 of nitrogen oxide and oxysulfide, and one usefulness remove not boracic ion (boron free) very-high performance screen pack (Ultra Low Penetration Air, UPLA) 26 of particulate (particle).Then a toolroom 28 is placed clean room 20, toolroom 28 is offered meter on adopting, and the opening inner edge includes the about one centimeter baffle plate of a width 30, is used for avoiding the air in the clean room 20 to enter toolroom 28 and cause interference.
Then as shown in Figure 3, with semiconductor wafer carrier (semiconductor wafer carrier), 12 cun wafer handling box (Front Opening Unified Pod for example, FOUP) 32, be positioned in the toolroom 28 in downward opening mode, and utilize toolroom 28 inner four pillar (not shown) that are provided with to fix the position of 12 cun wafer handling boxes 32.Utilize a ring nozzle (loop type) 34 will extract the surface, inside that fluid evenly is sprayed to 12 cun wafer handling boxes 32 at last, and toolroom 28 belows form an inclined-plane 36 and are arranged at the opening below of wafer handling box 32, to collect the extraction fluid and to carry out the qualitative and quantitative analysis of pollutant of organic substance, inorganic matter or trace meter.
In order to make the extraction fluid can evenly be covered in the surface, inside of wafer handling box 32, nozzle 34 is designed to a nozzle ring and can rotates by 360 degree, and the pressure stability of each jet expansion, simultaneously, the inventive method can be adjusted nozzle 34 rotating speeds to promote the area coverage of extraction fluid.The extraction fluid includes the high gas of cleanliness factors such as deionized water (deionized water) and helium, argon gas as vector gas (carrier gas), the inventive method can be controlled amount of deionized water and the carrier gas scale of construction and make the extraction fluid present column or vaporific, in addition, the inventive method can also be controlled the temperature of extraction fluid to increase contamination sampling efficient.
12 cun wafer handling boxes 32 are being positioned over before toolroom 28 inside carry out contamination sampling, the inventive method is cleaning and drywall tool chamber 28 earlier, to avoid influencing the contamination sampling result of wafer handling box 32.When carrying out the cleaning procedure of toolroom 28, utilize nozzle 34 that deionized water and hydrogenperoxide steam generator evenly are sprayed to toolroom 28 inside, and when carrying out the drying program of toolroom 28, utilize nozzle 34 that dry gas evenly is sprayed to toolroom 28 inside.
In brief, the method for sampling of semiconductor wafer carrier internal contamination of the present invention includes the following step in regular turn:
One clean room is provided;
One toolroom is placed the clean room;
Carry out the cleaning procedure of toolroom;
Carry out the drying program of toolroom;
12 cun wafer handling boxes are placed and be fixed in toolroom inside;
Set the temperature and the pattern (column or vaporific) of nozzle rotating speed, extraction fluid;
The sustainable utilization nozzle will extract the surface, inside that fluid evenly is sprayed to 12 cun wafer handling boxes in a scheduled time; And
Collect the extraction fluid and carry out the contamination sampling analysis.
The contamination sampling method of semiconductor wafer carrier of the present invention provides a clean room that includes chemical filter unit and particle filter earlier, to place this clean room through cleaning and dry toolroom then, at last this semiconductor wafer carrier is placed and be fixed in this toolroom, and utilize a nozzle evenly to spray the extraction fluid so that this semiconductor wafer carrier is carried out contamination sampling.Compare with the contamination sampling method of conventional semiconductors chip carrier, the inventive method comprises complete sampling routine and sampling environment, so sampled result has higher accuracy and confidence level.
The above is the preferred embodiments of the present invention only, and all equivalences of doing according to claim of the present invention change and modify, and all should belong to scope of the present invention.
Claims (12)
1. the method for sampling of a semiconductor wafer carrier internal contamination, this method comprises:
Place a toolroom in a clean room, this clean room includes a chemical filter unit;
Place and fix this semiconductor wafer carrier in downward opening mode in this toolroom inside;
According to the pollutant that will gather, utilize at least one nozzle will extract the surface, inside that fluid evenly is sprayed to this semiconductor wafer carrier; And
Collect this extraction fluid.
2. contamination sampling method as claimed in claim 1, wherein this clean room also includes a particle filter.
3. contamination sampling method as claimed in claim 2, wherein this chemical filter unit is with removing nitrogen oxide and oxysulfide.
4. contamination sampling method as claimed in claim 1, wherein the opening inner edge of this toolroom includes a baffle plate, and the air that is used for intercepting in this clean room enters this toolroom.
5. contamination sampling method as claimed in claim 1, wherein this nozzle is a ring nozzle.
6. contamination sampling method as claimed in claim 1, wherein this extraction fluid includes deionized water and vector gas.
7. contamination sampling method as claimed in claim 6, wherein this method comprises that the amount of deionized water of controlling this extraction fluid and the carrier gas scale of construction are so that this extraction fluid presents column or vaporific.
8. contamination sampling method as claimed in claim 1, wherein this method comprises that the temperature of controlling this extraction fluid is to increase contamination sampling efficient.
9. contamination sampling method as claimed in claim 1, wherein this semiconductor carrier includes 12 cun wafer handling boxes and 8 cun wafer handling boxes.
10. contamination sampling method as claimed in claim 1, wherein this semiconductor wafer carrier is carried out contamination sampling before, this method comprises this toolroom of cleaning and dry this toolroom in addition.
11. as the contamination sampling method of claim 10, wherein this method utilizes this nozzle that deionized water and hydrogenperoxide steam generator evenly are sprayed to this toolroom inside to clean this toolroom.
12. as the contamination sampling method of claim 10, wherein this method utilizes this nozzle that dry gas evenly is sprayed to this toolroom inside with dry this toolroom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031250270A CN1324647C (en) | 2003-04-29 | 2003-04-29 | A contamination sampling process inside carrier of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031250270A CN1324647C (en) | 2003-04-29 | 2003-04-29 | A contamination sampling process inside carrier of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1542904A CN1542904A (en) | 2004-11-03 |
| CN1324647C true CN1324647C (en) | 2007-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031250270A Expired - Fee Related CN1324647C (en) | 2003-04-29 | 2003-04-29 | A contamination sampling process inside carrier of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1324647C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106647667B (en) * | 2016-12-29 | 2019-05-03 | 武汉华星光电技术有限公司 | The management method and computer integrated manufacturing system equipment of carrier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326546A (en) * | 1998-11-12 | 2001-12-12 | Memc电子材料有限公司 | Ion extraction process and apparatus for single side wafers |
| CN1329748A (en) * | 1998-10-09 | 2002-01-02 | Scp环球技术公司 | Wafer cleaning and vapor drying system and method |
| WO2002005316A2 (en) * | 2000-07-07 | 2002-01-17 | Fluoroware, Inc. | Wafer container washing apparatus |
| CN1356930A (en) * | 1998-01-09 | 2002-07-03 | 氟器皿有限公司 | Wafer container washing appts. |
-
2003
- 2003-04-29 CN CNB031250270A patent/CN1324647C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1356930A (en) * | 1998-01-09 | 2002-07-03 | 氟器皿有限公司 | Wafer container washing appts. |
| CN1329748A (en) * | 1998-10-09 | 2002-01-02 | Scp环球技术公司 | Wafer cleaning and vapor drying system and method |
| CN1326546A (en) * | 1998-11-12 | 2001-12-12 | Memc电子材料有限公司 | Ion extraction process and apparatus for single side wafers |
| WO2002005316A2 (en) * | 2000-07-07 | 2002-01-17 | Fluoroware, Inc. | Wafer container washing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1542904A (en) | 2004-11-03 |
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Granted publication date: 20070704 Termination date: 20100429 |