CN1321446C - 线圈高度测量装置与方法 - Google Patents

线圈高度测量装置与方法 Download PDF

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CN1321446C
CN1321446C CNB2004100887153A CN200410088715A CN1321446C CN 1321446 C CN1321446 C CN 1321446C CN B2004100887153 A CNB2004100887153 A CN B2004100887153A CN 200410088715 A CN200410088715 A CN 200410088715A CN 1321446 C CN1321446 C CN 1321446C
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peak
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程晓辉
梁永康
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ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd
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Abstract

本发明提供了一种用于确定线圈上某点高度的方法与装置。高度规器件被放置在将被测量线圈上某点的上方。入射光从高度规器件中被投射以照明该点。高度规器件接收由入射光产生的反射光,同时被耦接到高度规器件中的处理器根据反射光的特性确定上述点相对于参考面的高度。本发明还提供了进一步用于寻找线圈上最高点位置和高度的方法及装置。

Description

线圈高度测量装置与方法
技术领域
本发明涉及一种用于确定半导体制造工艺,如引线焊接(wirebonding)工艺中形成的线圈(wire loop)上各个点之间高度的装置和方法。其具体但不局限于,用于确定包含焊接引线的线圈的最高点。
背景及现有技术
引线焊接被用于微电子工业中作为制作电学半导体芯片与衬底(如引线框承载器(leadframe carriers)与印刷电路或线路板)之间电气互连的方法。引线通常由金,铝和铜制成。引线互连工艺是自动化的,并且对于开发低成本、高成品率,又具有足够满足终端用户需求的长期可靠性的工艺是重要的。
随着后端半导体技术与工艺的提高,焊接引线的半径与焊点(bond pitch)都变得越来越小,同时封装密度也在增加。因此,需要更高的精确度和稳定性来形成良好控制的线圈。这些线圈需要被检查以确保它们在一定预先定义的参数以内被正确的排列。通过进行高度测量,焊接机的稳定性和可靠性可能被维持。为了进行检查与测量,光学方法通常是比较可取的,因为它们是非破坏性的以及非侵入性(non-intrusive)的。
在现有技术中,多种方法被用来测量线圈的高度。一个例子是美国专利号4,942,618,其名称为“确定引线或类似物品形状的方法与装置”。这种方法使用多个共轴CCD相机,其焦平面(focal planes)位置彼此不同以观察线圈。线圈通过CCD相机被观察,并且通过多个相机收集到的引线图像被处理以确定图像的对比度与尺寸,同时其结果被用来确定引线的形貌。但是,这样的装置体积庞大并且难于控制。不仅如此,更多的相机必须被用来提高测量分辨率与精确度。
另一个例子是美国专利号5,576,828,其名称为“焊接引线检测方法”。在该资料公布的信息中,焊接在半导体芯片和引线框之间的引线的高度通过使用来自安装在一个低角度照明器件上沿圆周排列的LED的照明来确定。照明的角度被设置在一定的范围内,并且光学器件的景深(focal depth)被设置成比较浅(shallow)。位于该光学系统的焦点处的引线的中央部分会出现一个暗区。光学器件被上下移动以获得暗区的聚焦图像,从而可以确定相对于光学系统高度而言引线的高度。这种装置的问题是成像系统较为庞大。因此,抬升与降低质量相对较大的光学系统的需求导致了整体移动速度的下降。
还有一个关于用于测量线圈高度的光学系统使用的例子在美国专利号5,583,641中被公开。引线高度和引线宽度之间的相互关系通过调节光学系统的聚焦程度来勘测。检测标准基于一个上限标准和一个下限标准被设置。这些标准将作为对应于将要被检测引线的可接受高度的参考标准。引线的图像宽度与上下限标准对比以确定引线的高度是否位于可接受的范围之内。该系统的问题同样是光学系统或其一部分必须上下移动以测量引线上的不同点,并且这样一个相对较大质量的移动降低了装置的速度。图像系统也是笨重的,而且光学设计也相对较为复杂。
发明概要
因此,本发明的目的在于提供一种改进的装置和方法以用来精确测量线圈上某点的高度,并且避免前述现有技术存在的一些缺点。如此,线圈一部分的高度或形貌可使用本发明来获得。
本发明一方面提供一种确定线圈上最高点的高度的方法,其包含有以下步骤:投射照明光线于该线圈的预定部分,根据从该线圈的所述预定部分的贴近最高点位置处反射的反射光特性,确定所述的贴近最高点位置;在线圈上该贴近最高点的上方设置高度规器件(heightgauge device);从高度规器件投射入射光以照明该贴近最高点;使用高度规器件接收由入射光产生的反射光;以及根据反射光的特性确定所述最高点相对于参考面的高度。
本发明另一方面在于提供一种用于确定线圈上最高点高度的装置,其包含有:照明光源系统,其用于投射照明光线于该线圈的预定部分;光接收器,其用于接收从所述预定部分反射的反射光,该光接收器被设置来根据从所述预定部分反射的反射光特性,确定该线圈的所述预定部分处的贴近最高点位置;高度规器件,其设置于线圈上该贴近最高点上方,用于投射入射光以照明该点以及接收由入射光产生的反射光;以及处理器,其和该高度规器件相耦接,用于根据反射光的特性确定所述点相对于参考面的高度。
参阅后附的描述本发明实施例的附图,随后来详细描述本发明是很方便的。附图和相关的描述不能理解成是对本发明的限制,本发明的特点限定在权利要求书中。
附图说明
根据本发明所述方法和装置的实施例参考附图加以描述,其中:
图1所示为装配了叠层晶片的衬底部分以及在图示的衬底与晶片之间制作的双层弯曲引线的等比例视图;
图2所示为一种使用三角形型传感器确定物体高度的方法的侧视示意图;
图3所示为另一种使用共焦型传感器确定物体高度的方法的侧视示意图;
图4a所示为根据本发明第一较佳实施例,从照明光源系统投射的光被晶片和衬底之间形成的线圈反射情形的侧视图;
图4b所示为晶片和衬底之间形成的线圈以及指示线圈最高点位置的线圈上亮点的正视图;
图5所示为根据本发明的另一个较佳实施例,为确定多个线圈中选定部分形貌而得到的扫描路径的正视图;
图6所示为根据图5所示较佳实施例,一系列相邻线圈的正视图以及线圈上与示例扫描路径相交的各点高度的图示;
图7所示为在沿着线圈选定部分不同点得到的线圈高度的图示,以及如何可能从数学上估计线圈最高点的示意图;
图8所示为用于耦合高度规器件的耦合支架的正视图,根据本发明实施例,该耦合支架将本发明原理应用到引线焊接机构;
图9所示为图8中耦合支架和高度规器件的侧视图;
图10所示为图8中耦合支架上标注为“B”的部分的放大图;
图11所示为图8中高度规器件沿分隔线A-A的截面图。
具体实施方式
图1所示为其上装配有叠层晶片12,14的衬底10部分的立体视图。晶片12,14和衬底10之间制作的双层弯曲引线焊接16也在图中表示了。存在与可能感兴趣物体相关的多个参考高度,如衬底10的基座上的基面,衬底10顶面的衬底高度,第一晶片12顶面的高度,第二晶片14顶面的高度,以及线圈16上多个点的高度。线圈16有独特的形貌18,并且在引线焊接工艺中人们会特别关注引线最高点,因为其允许用户判断线圈在进行进一步处理之前是否被正确的形成了。在本发明的较佳实施例中,重点是确定线圈16的形貌18特别是最高点的位置和/或高度。
图2所示为使用三角形型传感器确定物体高度方法的侧视示意图。照明光源20,如带有光学系统的激光二极管,发射一束较细的入射光以在参考物体表面22上形成一个光点。光点的反射或散射光被成像系统26聚焦,同时其位置被可能是位置敏感器件(position sensitivedevice,PSD)28或传感器形式的接收器接收和记录下来。需要说明的是,此处使用的术语“反射”包括光的散射或其他非正常反射。与接收器相连的处理器评测接收光的特性,在本例中该特性是反射光接收处的位置变化,因为探测器上的光点位置随着测量高度的变化而变化。如果测量表面24处于参考物体表面22上方Δ高度处,光点的反射(在图2中用点划线表示)发生变化,并且光点在PSD 28上的图像也变化了δ。由于Δ和δ之间的关系是可以从系统参数、结构和/或校准中预先得到的,因此高度值Δ能够被确定。
图3所示为另一种使用共焦(confocal)型传感器来确定物体高度方法的侧视示意图。诸如被光源小孔31限制的点光源30的照明光源被使用,并且其发出的光线被聚焦棱镜36聚焦到参考面或深度32上的一个光点。该光点从参考面或深度32上的物体上被反射或散射,同时反射光通过分束器(beam splitter)40向如点探测器38或传感器之类的接收器进一步偏斜。针孔37位于点探测器38的前方。针孔31,37和针孔31的像点最好是相互共轭(conjugated)的。当光从参考深度32处被反射时,参考深度32处大部分的能量被安排通过针孔37并且最大光强在点探测器38处被接收。
如果由于测量物体34的存在产生的物体深度变化导致了失焦(defocus)-不管是负失焦还是正失焦-光线的反射和偏斜点变得比针孔37大。仅仅只有反射光的一部分能够通过针孔37。与接收器相连的处理器对接收光的强度进行评测。由于物体深度和点探测器38接收到的光强之间的关系是已知的,或者通过系统参数和校准是可确定的,因此能够获得测量物体34的高度。
在普通方法中,如震动器件之类的移动结构被贴装到共焦光学系统上以调节点探测器38接收到的光的强度。使用这种结构可以使得物体的反射率不影响测量结果。在另外一种方法中,物体的反射率和高度规器件(height gauge device)能够被预先校准以便能够随着接收光强度的连续测量而获得物体的高度。
图2和图3是在本发明的较佳实施例中物体上某点的高度如何能够被测量的例子,而不应该理解为限定。其他可能的高度或深度测量方法也是可取的。同时可以理解的是,上述的光线包括可见和不可见光。
图4a所示为根据本发明第一较佳实施例,从照明光源系统(未显示)投射出的照明光线42被晶片12和衬底10之间的线圈16反射情形的侧视图。线圈16由引线焊接器件通过引线焊接工艺的方式形成。通过使用该第一较佳实施例,线圈16上的最高点位置基于反射光的特性被大致确定下来,其后,线圈16上贴近最高点处某点的高度通过使用高度规器件被确定。
照明光42从照明光源系统被投射以照明线圈16的预定部分。照明器件可能是辅助共轴照明或高角度侧向照明以照亮焊接后的引线。其中该预定部分为根据引线焊接机的焊接特性,线圈16可能被放置的一最高点部分。或者,线圈16也可能被绝大部分地照明。因为焊接引线16主要由金属材料制成,如金,铝或铜,引线16通常是可反射光的。因此照明光42从引线16的表面向各个方向被反射,其取决于线圈16的形貌。
反射光44的反射角通常等于投射到线圈16上的照明光42的入射角。当照明光42大部分垂直的照到线圈16的表面时,反射光44将被导向到成像系统26和如相机之类的光接收器28。通过使用光接收器28,线圈最高点的位置能够基于反射光的特性被大致确定。依照典型线圈16的普通环形形貌,线圈上完全水平区域(例如垂直于照明器件发出的照明光的入射角的地方)的一个或多个点如图4a所示被照明,从而在线圈16的该区域上形成了光接收器28探测到的最亮的点。所以,在本实施例中,人们感兴趣的反射光特性是线圈16上的最亮点。
图4b所示为晶片12和衬底10之间形成的线圈16a-c以及线圈16a-c上指示其最高点位置的亮点区域的正视图。这些是线圈16a-c各自具有水平形貌的位置,藉此线圈16a-c的最高点能够被大致确定。
线圈16a-c各自最高点处的贴近点高度能够通过在亮点46a-c的上方放置高度规器件以检测线圈16a-c在该位置处点的高度来确定。从高度规器件投射出入射光以照明该测量点,同时由该高度规器件接收反射光。从反射光的特性信息,如从参考位置的偏离或接受到的反射光亮度,可以计算出该点相对于参考面的高度。为了得到更好的精度,高度规器件可能在该位置宽度上被移动以确定在前述位置内多个点的高度,从而找到引线最高点的高度。
图5所示为根据本发明的另一个较佳实施例,用于确定多个线圈16的选定部分形貌的扫描路径的平面图。使用该第二实施例,线圈16上多个点的高度通过相对于高度规器件移动线圈16来被确定。基于多个点的高度,线圈16上最高点的高度能够被估计。或者,如果得到了从多个高度值估计到的最高点位置,可以移动高度规器件到该位置以直接精确测量该点的高度。
叠层晶片12,14被装配到衬底10上面。线圈16在底层晶片12和衬底10之间形成。一个合适的高度规器件,如使用图2和图3所述测量原理的器件,被设置到晶片12,14和衬底10上方的位置A。
然后,衬底10一方面和晶片12,14之间另一方面和高度规之间的沿如图5中点划线所示的扫描路径50的相对移动被初始化。最好是高度规器件被移动。扫描路径50如此安排以致从高度规器件投射出的入射光与每个线圈16的一段在多个点相交。产生相对移动的一个办法是将高度规器件耦合到定位器件中,其可能是XY台(未示出)的形式。如果这样的话,衬底10可能保持在完全静止的位置,而XY台相对于衬底10移动高度规器件。扫描路径以螺旋形式开始于点A并终止于点Z。或者,根据不同的应用,扫描路径可能包含一系列闭合路径而不是螺旋形式路径。沿扫描路径50的各点的高度以预先设定的方案被获得以确定沿路径50的每个点的高度,特别是路径50与线圈16相交地那些点。
图6所示为一系列相邻线圈16的正视图以及线圈16与使用图5所示较佳实施例的示例扫描路径50a相交的点对应的高度图示。该图给出了一系列沿扫描路径50a对应于线圈位置的峰。在每个峰处线圈16的高度通过高度测量装置被确定,并且可能被系统的存储器件记录下来。同样的程序被使用于另一条扫描路径50b等。结合获得的所有不同数值,系统能够计算和记录每个线圈沿每条扫描路径50a,50b等等的高度,并且每个线圈部分的形貌18也能够被获得。
图7所示为扫描路径与线圈16沿线圈选定部分相交的线圈16部分在不同点x1-x4获得的线圈16的高度h1-h4的图示,并且仅仅通过示例所述的方式,给出了如何基于在不同点上获得的线圈16的高度从数学上估计线圈16的最高点。
第一种方法涉及到外推法(extrapolation)。在点h1×1和h2×2以及h3x3和h4x4之间画直线。最高点近似位于两条直线的交点处,如图7中所示。交点处的高度值能够通过线性方程获得。
第二种方法涉及公式曲线拟合方法,其将取决于引线焊接机的线圈构成设置以及工艺。
另一个可取的特点是具有能够实现高度规器件或其组件沿z轴移动以便改变高度规器件高度从而扩大其测量范围的机理。这个特点在测量线圈的不同层时是有用的。线圈16一个具有不同常规高度层的例子显示在图1中。其机理可能是移动高度规器件的光学模块的组件,或者整个高度规器件。
图8所示为根据本发明的较佳实施例,在引线焊接机构(未给出)中利用本发明原理的用于耦合高度规器件64的耦合支架(couplingbracket)60的正视图。高度规器件64可能包括,并非限制,如图2中演示的三角形型传感器,或如图3中演示的共焦型传感器。耦合支架60被装配到同样用于定位引线焊接机焊接头的XY台上可能是比较可取的,这样可以使得高度规器件64能够与贴装到焊接头上的引线焊接工具一起移动,例如用于键合引线超声焊接的超声波换能器(ultrasonic transducer)。在图8中,耦合支架60的一端包括引线焊接光学模块62,其通常用于监视引线焊接工艺。耦合支架60的另一端包括CCD相机67以获取从引线焊接光学模块62传过来的图像。高度规器件64最好被装配在于引线焊接光学模块62相邻的位置。
图9所示为图8中耦合支架60和高度规器件64的侧视图。通过移动耦合支架60,高度规器件64被定位在包括已焊接引线68的半导体器件66的上方,从而可以测量已焊接引线68上一个或多个点的高度。根据上述本发明的第一较佳实施例,被装配在耦合支架60的下表面的共轴环光源65形式的照明光源系统可能被用于产生焊接引线68上的照明光。其后,根据第一较佳实施例,CCD相机和该引线焊接光学模块62一起使用以估计焊接引线68的最高点的大概位置。
图10所示为图8中耦合支架上标记为“B”的部分的放大图。引线焊接光学模块62以及高度规器件64相对于耦合支架60的朝向平面图也在图中给出了。
图11是图8中高度规器件64沿分隔线A-A的截面图。高度规器件64通过装配支架70被装配到耦合支架60上。可包含有装配孔72以将装配支架70螺固到耦合支架60上。
高度规器件64被设计成在z轴上相对于耦合支架60垂直移动。在本发明的特定情况下,上下两个方向上2mm的移动范围就足够了。高度规器件64被耦合到激励器(actuator)上以产生该垂直移动是较为可取的。激励器可能包括设置在永磁铁76之间的音圈(voice coil)74的线形马达,永磁铁76位于音圈74的侧面从而能够通过控制音圈74流过的电流使得音圈74产生相对于永磁铁76的垂直运动。
电路板78被放置在高度规器件64的顶部,以产生和接收来自器件64的部件中电信号。其包括用于处理电信号的处理器件。包括激光二极管80的光源被耦接到电路板78中,以投射入射光。从激光二极管80发出的入射光84通过光学部件,如聚焦入射光84到半导体器件66的焊接引线68上的校准和聚焦棱镜82。入射光84在焊接引线68上的某点被反射从而产生通过成像光学部件中的成像棱镜88的反射光86。被耦接到电路板78上的位置敏感器件90被设计用于接收通过成像棱镜88的反射光。通过反射光86相对于参考位置的位置传感,入射光84达到焊接引线68上的点的高度被确定下来。从设备的设置可以清楚的看到,这种实现方法利用了图2所示的确定焊接引线68上点的高度的三角形方法。
此处描述的本发明在所具体描述的内容基础上很容易产生变化、修正和/或补充,可以理解的是所有这些变化、修正和/或补充都包括在本发明的上述描述的精神和范围内。

Claims (19)

1、一种用于确定线圈上最高点高度的方法,其包含有以下步骤:
投射照明光线于该线圈的预定部分,根据从该线圈的所述预定部分的贴近最高点位置处反射的反射光特性,确定所述的贴近最高点位置;
在线圈上该贴近最高点位置的上方定位高度规器件;
从高度规器件投射入射光以照明该贴近最高点;
使用高度规器件接收由入射光产生的反射光;以及
从反射光的特性确定所述最高点相对于参考面的高度。
2、如权利要求1所述的方法,其中该高度规器件包含三角形型传感器。
3、如权利要求1所述的方法,其中该高度规器件包含共焦型传感器。
4、如权利要求1所述的方法,其中该贴近最高点位置的照明光入射角完全垂直于线圈在该位置的形貌。
5、如权利要求1所述的方法,其包括有:确定该贴近最高点位置内多个点的高度。
6、如权利要求1所述的方法,其包括有:相对于线圈移动高度规器件以确定线圈上该贴近最高点位置内多个点的高度。
7、一种用于确定多个线圈的最高点的高度的方法,其包含有以下步骤:
在线圈上方定位高度规器件;
将来自该高度规器件的入射光投射于该线圈上,以照明该线圈上的点;
使用该高度规器件接收由该入射光所产生的反射光;
从反射光的特性确定所述点相对于参考面的高度;
沿着扫描路径相对于该线圈移动该高度规器件,以便于自该高度规器件所投射的入射光与多个线圈中每个线圈的一段相交;
其中扫描路径在多个位置和每个线圈的一段相交。
8、如权利要求7所述的方法,其包括记录扫描路径与每个线圈相交的每个位置处每个线圈上的各个点的高度。
9、如权利要求8所述的方法,其包括如下的步骤:基于记录的扫描路径与线圈相交的多个位置处的线圈高度值,来估计线圈最高点处贴近点的高度。
10、一种用于确定线圈上最高点高度的装置,其包含有:
照明光源系统,其用于投射照明光线于该线圈的预定部分;光接收器,其用于接收从所述预定部分反射的反射光,该光接收器被设置来根据从所述预定部分反射的反射光特性,确定该线圈的所述预定部分处的贴近最高点位置;
高度规器件,其设置于线圈上该贴近最高点的上方,用于投射入射光以照明该点以及接收由入射光产生的反射光;以及
处理器,其和该高度规器件相耦接,用于从反射光的特性确定所述点相对于参考面的高度。
11、如权利要求10所述的装置,其中该高度规器件包含三角形型传感器。
12、如权利要求10所述的装置,其中该高度规器件包含共焦型传感器。
13、如权利要求10所述的装置,其中该照明光源系统被配置成投射到该贴近最高点位置的照明光的入射角与该位置处的线圈形貌完全垂直。
14、如权利要求10所述的装置,其中该高度规器件被放置在相邻于引线焊接光学模块的位置。
15、如权利要求10所述的装置,其包含激光二极管,其和该高度规器件相藕接,以用于投射入射光到该点上。
16、如权利要求10所述的装置,其包含有耦接到高度规器件的位置敏感器件,以用于接收由入射光产生的反射光。
17、一种用于确定多个线圈上最高点高度的装置,其包含有:高度规器件,其设置于线圈上方,用于投射入射光以照明线圈上的点以及接收由入射光产生的反射光;
处理器,其和该高度规器件相耦接,用于从反射光的特性确定所述点相对于参考面的高度;
定位器件,其被设置来沿着扫描路径相对于线圈移动该高度规器件,以便于从该高度规器件投射出的入射光在多个位置和每个线圈的的一段相交。
18、如权利要求17所述的装置,其包含存储器件,该存储器件用于记录扫描路径与各个线圈的每一个交点处线圈上的点的高度值。
19、如权利要求18所述的装置,其包含有处理器件,该处理器件基于记录的扫描路径与线圈相交的多个位置的线圈高度值,来估计线圈最高点处贴近点的高度。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179920A (zh) * 2020-11-29 2021-01-05 惠州高视科技有限公司 一种芯片焊线缺陷的检测方法及系统

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7086148B2 (en) * 2004-02-25 2006-08-08 Agere Systems Inc. Methods and apparatus for wire bonding with wire length adjustment in an integrated circuit
US7908757B2 (en) 2008-10-16 2011-03-22 Hexagon Metrology, Inc. Articulating measuring arm with laser scanner
US8082673B2 (en) 2009-11-06 2011-12-27 Hexagon Metrology Ab Systems and methods for control and calibration of a CMM
CN102645311B (zh) * 2011-12-12 2014-12-10 浙江吉利汽车研究院有限公司 一种柱撞试验对中的方法
JP5680005B2 (ja) 2012-02-24 2015-03-04 株式会社東芝 コネクタの嵌合状態を検査する検査方法および検査装置、並びにコネクタを有する電気機器の組立方法
SG2013084975A (en) * 2013-11-11 2015-06-29 Saedge Vision Solutions Pte Ltd An apparatus and method for inspecting asemiconductor package
TWI580511B (zh) * 2014-06-10 2017-05-01 Shinkawa Kk A bonding device, and a method of estimating the placement position of the engagement tool
US10036627B2 (en) 2014-09-19 2018-07-31 Hexagon Metrology, Inc. Multi-mode portable coordinate measuring machine
US9781362B1 (en) * 2016-03-22 2017-10-03 Omnivision Technologies, Inc. Flare-reducing imaging system and associated image sensor
JP6330162B2 (ja) * 2016-11-24 2018-05-30 株式会社新川 ボンディング装置およびボンディング対象物の高さ検出方法
TW202232051A (zh) * 2020-10-14 2022-08-16 新加坡商億美設備私人有限公司 疊合焊線之迴路高度測量
CN112485272B (zh) * 2020-12-14 2021-11-09 紫创(南京)科技有限公司 半导体检测装置及检测方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621218A (en) * 1994-06-03 1997-04-15 Nec Corporation Method and apparatus inspecting bonding-wire status using a plurality of light sources
US6181425B1 (en) * 1998-03-05 2001-01-30 General Scanning, Inc. Method and system for high speed measuring of microscopic targets
CN1382956A (zh) * 2001-04-26 2002-12-04 奥林巴斯光学工业株式会社 测距装置的调整装置及调整方法
CN1393011A (zh) * 2000-08-16 2003-01-22 皇家菲利浦电子有限公司 包含磁导线性马达的扫描装置
CN1403783A (zh) * 2002-09-18 2003-03-19 清华大学 一种非球面镜顶点曲率半径测量方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2688361B2 (ja) * 1988-08-02 1997-12-10 正己 山川 光電センサ
JP2981942B2 (ja) * 1991-12-02 1999-11-22 株式会社新川 ボンデイングワイヤ検査方法
JP3235009B2 (ja) * 1994-09-09 2001-12-04 株式会社新川 ボンディングワイヤ検査方法
TW365037B (en) 1995-09-14 1999-07-21 Tsukuba Seiko Ltd Inspection apparatus for connection wiring height
US6750974B2 (en) * 2002-04-02 2004-06-15 Gsi Lumonics Corporation Method and system for 3D imaging of target regions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621218A (en) * 1994-06-03 1997-04-15 Nec Corporation Method and apparatus inspecting bonding-wire status using a plurality of light sources
US6181425B1 (en) * 1998-03-05 2001-01-30 General Scanning, Inc. Method and system for high speed measuring of microscopic targets
CN1393011A (zh) * 2000-08-16 2003-01-22 皇家菲利浦电子有限公司 包含磁导线性马达的扫描装置
CN1382956A (zh) * 2001-04-26 2002-12-04 奥林巴斯光学工业株式会社 测距装置的调整装置及调整方法
CN1403783A (zh) * 2002-09-18 2003-03-19 清华大学 一种非球面镜顶点曲率半径测量方法及装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179920A (zh) * 2020-11-29 2021-01-05 惠州高视科技有限公司 一种芯片焊线缺陷的检测方法及系统

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