CN1285761C - Injector and method for prolonged introduction of reagents into plasma - Google Patents
Injector and method for prolonged introduction of reagents into plasma Download PDFInfo
- Publication number
- CN1285761C CN1285761C CNB01820984XA CN01820984A CN1285761C CN 1285761 C CN1285761 C CN 1285761C CN B01820984X A CNB01820984X A CN B01820984XA CN 01820984 A CN01820984 A CN 01820984A CN 1285761 C CN1285761 C CN 1285761C
- Authority
- CN
- China
- Prior art keywords
- injector
- reactant
- plasma
- inwall
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
A method and apparatus for injecting a fluid into a plasma stream with a uniform distribution and with reduced likelihood of clogging over prolonged use is provided. An injector (2) includes a first channel portion (6) for restricting a flow of the fluid and having a shape such that inner walls of the first channel portion (2) are parallel to a first axis (9). The injector (2) also includes a second channel portion (8) in fluid communication with the first channel portion (69). The second channel portion (8) includes a recessed portion such that inner walls of the second channel portion (8) diverge from the first axis (9) at a predetermined angle. The second channel portion (8) reduces a buildup of a clogging layer on the inner walls of the second channel portion (8) over a period of use. In addition, the injector (2) can further include a tip portion (28) that protrudes into the plasma. The injector (2) can be integrated into or interchangeable within an injector system that can be designed for operation within a plasma deposition apparatus.
Description
Background of invention
The present invention relates to a kind of apparatus and method that fluid injects that are used for, it is used for reagent to intravital extension transmission of plasma and uniformly distributing.Particularly, the present invention relates to a kind of injector, be used for for example depositing protective coating on glass, quartz, metal or metallization material and the plastics at various base materials.
Polycarbonate (PC) sheet material or film are used for outdoor application scenario make it to avoid wearing and tearing as the glazing of building and all claimed PC of glazing of automobile.Therefore, on PC, form wear-resistant coating usually.
The various conventional deposition techniques that are used for wear-resistant coating have been developed.For example, chemical vapor deposition (CVD), physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD) are widely used.PVD generates solid film by providing heat energy to activate to be used for sedimentary source material with this.CVD generates solid film by the hot activation and the surface reaction of gaseous reagent on substrate surface, described gaseous reagent contains desirable membrane component.Provide the activating reaction thing required energy by heated substrate.For making speed of reaction suitable, base material is heated to higher relatively temperature, be about 500-2000.PECVD provides energy by discharge in gas to reactant, makes described gas form plasma body in the sediment chamber.By means of plasma body, no longer need heated substrate, and can low melting material such as plastics be applied in direct mode by using PECVD.
A kind of critical elements in these depositing systems is to be used for reagent, metal vapors, and the equipment of other source material injected plasma stream.For example, U.S. Patent application 09/033,862 (on March 3rd, 1998 submitted to, and is unsettled) and United States Patent (USP) 6,110,544 (mandate on August 29th, 2000) have been described a kind of be used to use high rate arc plasma, the sedimentary nozzle injector of big area.
Usually, use a succession of hole (being also referred to as injector) that is evenly distributed on injector body or the plate to have control equably gas or steam to be delivered on the zone.This equipment is called as shower nozzle type injector or divider sometimes.Be reagent uniformly distributing in all injectors of guaranteeing to inject, uniform high flow resistance need be arranged at each injector place.
For example, shown conventional narrow, straight wall injector among Fig. 2, as injector 20.Often, reagent interacts with the plasma body 18 in close outlet opening such as hole 22, and reagent not only is deposited on 22 places, hole as solid layer 19 but also deposits along inwall 24 like this.When in hyperchannel reagent injection device, using, unbalanced obstruction may take place in each hole, therefore hindered the homogeneity of reagent transmission (and deposition subsequently).And the performance of injector may change over time as the function of time, needs often to clean the injector that stops up.
Therefore, though the shower nozzle type injector is effective to uniformly distributing reagent, it has the blocked common deficiency in hole in being exposed to coagulable reagent process for a long time, when particularly having plasma body.It is because the concentration of reagent is very high at injector outlet opening place that this phenomenon takes place, and because injector often contacts with plasma body.The high density of reagent adds that the activation of plasma body impels solid film to deposit on the inwall of injector outlet opening place and injector.Therefore, As time goes on injector is blocked.If unbalanced obstruction takes place, then just hindered the homogeneity of material transfer among each injector.The injector that stops up need clean or replace, and therefore makes process disruption, has increased stoppage time and productive expense.
Summary of the invention
It seems by foregoing, a kind of device that is used for fluid injected plasma stream need be provided, it can be in using for a long time uniformly distributing and reduced possibility of jamming.
The invention provides a kind of ejector system that is used for fluid injected plasma, it comprises:
Comprise injector (2) and have first matrix surface (14) and the matrix (4) of second matrix surface (12), it comprises:
Extend in the matrix (4) and limit first inwall (3) of first channel part (6) by first matrix surface, be used for flowing of limit fluid reactant, and its profile makes first inwall (3) of first channel part (6) be parallel to first (9), and wherein said first channel part (6) has first diameter; With
Limit second inwall of the second passage part (8) that is communicated with first channel part (6) fluid, and it has the recess part, second inwall of second passage part departs from first (9) at a predetermined angle like this, wherein second passage part (8) has second diameter greater than first diameter, and second passage part (8) makes fluid reactant enter the plasma body by second matrix surface (12) and reduced the formation of colmatation zone between the usage period (19) on second inwall of second passage part (8).
In a specific embodiments, wherein said predetermined angular is that 20 degree are to 70 degree.
In a specific embodiments, wherein injector (2) integrally forms on injector matrix (4), and this injector comprises:
First surface (14) in injector matrix (4) is gone up the ingate (5) that forms; With
Second surface (12) in injector matrix (4) is gone up the outlet opening (7) that forms.
In a specific embodiments, wherein injector (30) can be removed from injector matrix (34), preferably wherein injector (30) also comprises the main body (36) with threaded outer wall, and the injector matrix comprises thread jack (38) and is used to install the screw thread injector body.
In a specific embodiments, described injector also comprises:
Stretch out matrix surface (29) and enter tip portion (28) in the plasma body (18), wherein the diameter of tip portion (28) is greater than the diameter of first channel part (6), and preferably wherein tip portion (28) distance of stretching out matrix surface (29) is the 0.001-0.3 inch.
The present invention also provides a kind of device that is used for coated substrate, and it comprises:
Plasma generator (140) with anode (119) and negative electrode (113), it can form the arc plasma (152) of shifting to base material (180);
The sediment chamber (156) that comprises base material anchor (182); With
Be positioned at first ejector system (60) between anode (119) and the base material anchor (182), be used for first reactant is introduced plasma body (152), first ejector system (60) comprises injector (130), and injector (130) comprises:
Limit the first channel part (6) of first reagent flow, its profile makes the inwall (3) of first channel part (6) be parallel to first (9), wherein first channel part (6) have first diameter and
The second passage part (8) that is communicated with the first channel segment fluid flow, it has the recess part, make the inwall (3) of second passage part (8) depart from first (9) at a predetermined angle, wherein second passage part (8) has second diameter greater than first diameter, and wherein second passage part (8) makes fluid reactant enter plasma body and reduced the formation of colmatation zone between the usage period (19) on the inwall of second passage part (8).
The present invention also provides a kind of method that is used for coated substrate, and it may further comprise the steps:
(a) first reactant is supplied with first ejector system (60), this system has the injector (70-76) of the circumferential arrangement of a plurality of longshore current body feed paths (64), wherein each injector comprises first channel part (6) and has the hole (5) that a diameter is enough to limit first reagent flow, with second passage part (8), it is the recess part, make the inwall (3) of second passage part (8) depart from first (9) at a predetermined angle like this, to reduce by first reactant at inwall (3) with stretch into obstruction on the tip portion (28) of plasma body (18);
(b) produce arc plasma;
(c) first reactant is introduced this plasma body; With
(d) first reactant is deposited on the surface of base material (180).
The present invention also provides a kind of equipment that is used for coated substrate, and it comprises:
Be used to produce the device of plasma body;
Be used for first reactant is supplied with the device of injector device, described injector device is used for first reactant is introduced plasma stream, this injector device comprises and is used for first reactant is introduced the device of plasma stream and be used to reduce the device that first reactant stops up on this injector device inwall, wherein be used for the device that first reactant is introduced plasma body comprised by first matrix surface and extend in the matrix and limit first inwall of first channel part, be used to limit flowing of first reactant, described first channel partly has first diameter and its profile makes first inwall of first channel part be parallel to first; And second inwall of the second passage part that is communicated with the first channel segment fluid flow of qualification, described second passage partly has second diameter greater than first diameter, and have the recess part, like this second inwall of second passage part depart from a predetermined angle first and
Be used for to contain being coated with of first reactant and be deposited upon device on the substrate surface.
The invention provides a kind of ejector system, it comprises the matrix that contains injector.This injector comprises the inwall that has defined the first channel part, is used for flowing of limit fluid, also has to make the inwall of first channel part be parallel to first profile.This injector also comprises the inwall that has defined the second passage part that is communicated with the first channel segment fluid flow.Second passage partly comprises a recess part, makes the inwall of second passage part depart from first at a predetermined angle.Second passage has partly reduced the accumulation of colmatation zone on second passage part inwall between the usage period.In addition, injector can further comprise a tip portion that stretches into plasma body.
It seems by foregoing, also need to provide a kind of device that is used for coated substrate.
According to another embodiment of the invention, the device that is used for coated substrate comprises plasma generator, and it has the anode and the negative electrode that can form the arc plasma that moves to base material; A cell is equipped with base material; And first ejector system, between described anode and base material, be used for first reactant is introduced plasma body.First ejector system contains an injector, and this injector comprises the first channel part, is used for flowing of limit fluid, also has to make the inwall of first channel part be parallel to first profile.This injector also comprises the second passage part that is communicated with the first channel segment fluid flow.Second passage partly comprises a recess part, makes the inwall of second passage part depart from first at a predetermined angle.Second passage has partly reduced the accumulation of colmatation zone on inwall between the usage period.In addition, injector can further comprise a tip portion that stretches into plasma body.
It seems by foregoing, a kind of method that is used for fluid injected plasma stream need be provided, it can be in using for a long time uniformly distributing fluid and reduced possibility of jamming.
According to another embodiment of the invention, method with even mode coated substrate may further comprise the steps: provide first reactant to ejector system, described ejector system has the injector that many edges provide the circumferential arrangement of fluidic passage, wherein each injector comprises the hole that first channel part and diameter are enough to limit first reagent flow, and comprise the second passage part, it is a recess part, the inwall of second passage part departs from first at a predetermined angle like this, and the colmatation zone that contains first reactant with minimizing is accumulated on inwall.Produce arc plasma.First reactant is introduced plasma body, and first reactant is deposited on the surface of base material.
It seems by foregoing, be desirable to provide a kind of goods that use apparatus of the present invention coating deposited that have.
According to another embodiment of the invention, contain a kind of base material with the coated articles of apparatus of the present invention coatings, this base material has a surface and one deck usefulness plasma auxiliary chemical vapor deposition method coating deposited on this surface at least.
Describe other features and advantages of the present invention in detail below with reference to accompanying drawing, and the structure of the various embodiments of the present invention and operation.
The accompanying drawing summary
The accompanying drawing that is incorporated herein and forms the part of specification sheets is for example understood the present invention, and is used for further explaining principle of the present invention with specification sheets, makes those skilled in the relevant art can make and use the present invention.
Fig. 1 has shown the sectional view that has the injector of recess part according to one embodiment of the invention.
Fig. 2 has shown the sectional view of the injector with straight hole passage.
Fig. 3 has shown the sectional view that has the recess part and the injector at the tip of stretching out according to another embodiment of the invention.
Fig. 4 has shown the sectional view that has the recess part and the changed injector at the tip of stretching out according to another embodiment of the invention.
Fig. 5 A-5E has shown the sectional view of various injector embodiments according to an alternative embodiment of the present invention.
Fig. 6 A has shown ejector system according to another embodiment of the invention, and it has a plurality of injectors that are arranged in the ring-shaped component.
Fig. 6 B and 6C have shown optional ejector system according to another embodiment of the invention, and it has arranges a plurality of injectors of semicircular in shape in the plane.
Fig. 7 has shown optional ejector system according to another embodiment of the invention, and it has a plurality of uneven injector that distributes that is arranged in the ring-shaped component.
Fig. 8 has shown the plasma arc equipment of application sprayers system according to another embodiment of the invention.
Fig. 9 has shown plasma arc equipment according to another embodiment of the invention, and it has plasma body generation chamber and sediment chamber.
Detailed description of preferred embodiments
The inventor finds, is used for the conventional straight hole passage of fluid such as reagent gas injection arc plasma is easy to produce serious blockage problem.According to the present invention, use and to have recess part and the optional outstanding injector that enters the tip portion of plasma flow and can overcome or reduce these blockage problem at least.
Fig. 1 has shown the side cross-sectional view of injector 2 according to the first embodiment of the present invention.As shown in Figure 1, injector 2 integrally is arranged in injector plate or the matrix 4.The material that forms the inwall 3 of plate or matrix 4 and injector 2 can be any material that is applicable to the plasma chamber deposition applications.For example, matrix 4 can comprise the stainless steel main body, or any other metal such as nickel, or other metal alloy such as MONEL
TM(Inco Alloys International registration) or HASTELLOY
TM(Haynes International registration), it can bear high service temperature and can fusion.Another selection, matrix 4 can comprise pottery etc., and it can bear very high service temperature.
In this one side of first embodiment of the present invention, injector 2 integrally forms in body portion 4.In addition, matrix 4 can be rough flat matrix.Another is selected, and matrix 4 can be arranged to have the annular (as described below) of many injectors.Can design other given configuration of matrix 4 according to the present invention, this will be apparent to those skilled in the art.
As the explanation of Fig. 1, injector 2 has the outlet opening 7 in ingate 5 that forms on the matrix surface 14 and formation on matrix surface 12.The first part 6 of preferred injector 2 is columniform, so that the wall of first part 6 is parallel to first 9.Another is selected, and the cross section of the first part 6 of injector 2 can have any polygonal outer shape.The second section 8 of injector 2 is recess parts, and wall wherein departs from first 9 at a predetermined angle.This predetermined angular can be extremely almost 90 degree of 10 degree (with respect to axle 9).According to a preferred embodiment, this predetermined angular can be that about 20 degree are to about 70 degree.In this embodiment, second section 8 is preferably conical.
The third part 10 of injector 2 forms oral pore 7.Part 10 can be columniform, as shown in Figure 1, but diameter bigger than part 6.Another is selected, and the cross section of part 10 can have any polygonal outer shape.In addition, part 10 off-axis 9 selectively.The angle of inwall 3 off-axis 9 can extremely be spent near 90 for zero degree.In addition, the angle that departs from of part 10 can be identical or different with the angle that part 8 departs from.Can be with conventional processing technology fabrication portion 6,8 and 10 on matrix 4, the those of ordinary skill in the field that this specification sheets is provided, this is conspicuous.
In operation, fluid such as reagent, gas or steam pass hole 5 from regional 16 outflows and enter injector 2, pass outlet opening 7 then and enter plasma cloud or plasma flow 18.The flow direction of plasma flow 18 can be along vertical (at one of both direction) of injector plate 4 or horizontal (promptly entering or leave drainage).Therefore, injector 2 can under high pressure separate plasma body from reagent.
The passage 20 that the hole of minor diameter such as Fig. 2 show can provide high resistance to flow.This resistance to flow is useful for the reagent uniform distribution is entered plasma flow.Yet, being different from conventional (straight hole) passage 20 (Fig. 2 demonstration), the recess part 8 of the injector 2 that Fig. 1 shows has reduced the direct exposure of part 6 in plasma body.
As mentioned above, conventional injector such as the injector among Fig. 2 20 are easy to As time goes on stop up, and wherein film 19 forms at outlet opening 22 and inwall 24 places.Therefore, when in multi-injector equipment, using, in each hole, may take place unevenly to stop up, therefore hinder the homogeneity of reagent transmission (and deposition subsequently).
According to another embodiment of the invention, as the explanation of Fig. 3, injector 26 can comprise recess part 8 and stretch out the tip portion 28 that enters plasma flow 18 above matrix surface 29.Tip portion 28 can stretch out and surpass surperficial 29 some thousandths of inches to tens of inches, and enters plasma flow.According to the present invention, injector 26 has improved reagent and has disperseed to enter plasma flow 18.Injector part 6,8 and 10 can be designed to such an extent that be similar to appearance among above-mentioned Fig. 1 that discusses, wherein the diameter of part 6 is littler than the diameter of recess part 8 and part 10.In addition, explain that after reusing, the design of injector 26 has reduced obstruction to a greater degree than the design of the conventional injector 22 that Fig. 2 shows as following experimental section.
Another aspect of this embodiment according to the present invention, injector 30 can be designed to following form: the removable plug-in unit with different channel diameters is arranged, the different recess parts that depart from first different angles are arranged, and the most advanced and sophisticated distance difference that puts in plasma flow.For example, as shown in Figure 4, injector 30 has recess part 8 and extension 28, its be similar to above-described those, can insert injector matrix 34 and can shift out from injector matrix 34.Matrix 34 comprises threaded portion 36, threaded portion 38 couplings of itself and injector 30.Another selection, injector 30 can have the smooth exterior surface face, matrix 34 can be designed can be for injector 30 provides the form fit be close to or the susceptor of frictional fit, the those of ordinary skill in this field that this specification sheets is provided is conspicuous.In addition, injector 30 can be chosen wantonly and further comprise hole enlargement part 32, and it reaches matrix surface below 31.Therefore, can in plate 34, use dissimilar injectors for different application.For this design, can injector easily customized to be used for different technology.
Fig. 5 A-5E has shown some other injector designs embodiments.In Fig. 5 A, injector 40 integrally forms on matrix 41.The first part 6 that injector 40 comprises can be columniform, so that the wall of first part 6 is parallel to axle 43.The second section 42 of injector 40 is recess parts, and wall wherein departs from the axle of cylinder at a predetermined angle.Notice that the 3rd is generally columniform part and omits from this design.Another is selected, and injector 40 can be changed over the interchangeable plug in unit in the matrix 41, is similar to the interchangeable injector of describing among top Fig. 4.
In Fig. 5 B, injector 44 integrally forms on matrix 45.The first part 46 of injector 44 is recess parts, and wall wherein is off-axis 43 at a predetermined angle.Notice that injector 44 does not comprise and is generally columniform part.Another is selected, and injector 44 can be made into the interchangeable plug in unit in the matrix 45, is similar to the interchangeable injector of describing among top Fig. 4.
In Fig. 5 C, injector 48 integrally forms on matrix 49.The first part 50 of injector 48 is recess parts, and wall wherein is off-axis 43 at a predetermined angle.The second section that limits injector 48 has columniform tip portion 51, and it stretches out above the end face of matrix 49 and stretches into plasma body or plasma flow.Be similar to the injector 26 that top Fig. 3 describes, the end face some thousandths of inch that tip portion 51 can stretch out above plate 49 enters plasma flow to tens of inches.Another is selected, and injector 48 can be made into the interchangeable plug in unit in the matrix 49, is similar to the interchangeable injector of describing among top Fig. 4.
In Fig. 5 D, injector 37 integrally forms on matrix 39.The first part 6 that injector 37 comprises is columniform, so that the wall of first part 6 is parallel to axle 43.The second section 38 of injector 37 is columniform, and its diameter is bigger than the diameter of part 6.In this embodiment, the inwall of part 6 and part 38 is parallel to each other.
Aspect this of this embodiment of the present invention that shows at Fig. 5 E, injector 52 is acute angle with respect to the end face 59 of matrix 53 and arranges.Shown in Fig. 5 E, injector 52 integrally forms on matrix 53.Injector 52 is included as columniform first part 55, and the wall of first part 55 is parallel to axle 54 like this, and axle 54 tilts to be acute angle with respect to end face 59.This angle of inclination can be extremely about 70 degree of about 10 degree, is preferably about 30 degree to about 60 degree.The second section 56 of injector 52 is recess parts, and wall wherein is off-axis 54 at a predetermined angle.The third part 57 of injector 52 can be columniform or can off-axis 54.Tip portion 58 stretches out the end face 59 above matrix 53, enters plasma body or plasma flow.Be similar to the injector 26 that top Fig. 3 describes, the end face some thousandths of inch that tip portion 58 can stretch out above plate 53 enters plasma flow to a few tenths of inch.Another is selected, and injector 52 can be changed over the extensible and interchangeable plug in unit on the matrix 53, and the those of ordinary skill in this field that this specification sheets is provided is conspicuous.
Fig. 6 A has shown another embodiment of the invention, and ejector system has a plurality of injectors that are arranged on the ring-shaped component.Fluid supply line line 62 links to each other with fluid feed path 64, and passage 64 forms in the body interior of ejector system 60.Fluid feed path 64 contains many injector 70-76, and it preferably is evenly distributed on the circumference of passage 64.Each injector 70-76 can design with the different injector embodiments that write up of 5A-5E with respect to Fig. 1,3,4 according to above.For example, one or more injector 70-76 can comprise recess part and the optional tip of stretching out, further to reduce possibility of jamming.Fluid is from pipeline 62 flow channels 64.Then, fluid flows through injector 70-76 simultaneously from passage 64, enters space, sediment chamber 79 from some directions.In this embodiment of the present invention, ejector system 60 comprises one or more injectors, and it links to each other with the reactant supply line or with the pipeline that the fluid transmission enters plasma body.Another selection, as described below, this ejector system needs not to be annular, can be designed to have the plane cylinder (Fig. 6 B) of a plurality of injectors, perhaps is semicircle (Fig. 6 C).A plurality of injectors can be distributed on the injector plate zone of different geometries (as disc, square, rectangle, trilateral or trapezoidal), to cooperate the design of the sediment chamber that is used for different profile base materials best.
In a preferred embodiment, supply with plasma body from plasma generator 80 as the outlet of direct current arc.Plasma body can flow into or flow out paper, as shown in Figure 6A.
Of this embodiment preferred aspect, use reactant on polycarbonate substrate, to form the coating of scrape resistant, as aluminum oxide (Al
2O
3), silicon-dioxide (SiO
2), the carbon of dimantine or the silicon coating of plasma polymerization, of unsettled U. S. application series number 09/271,658 people such as (, on March 17th, 1999 submitted to) Charles Iacovangelo.
Fig. 6 B and 6C have shown alternative ejector system according to another embodiment of the invention, and it has a plurality of injectors that are arranged in respectively on plane and the semicircle.In Fig. 6 B, fluid supply line 62 links to each other with fluid feed path 65, and passage 65 forms in the body interior of ejector system 61.Fluid feed path 65 is generally cylindrical, comprises a plurality of injector 70-74.Can design each opening 70-74 according to the different injector embodiments that write up above.For example, one or more injector 70-74 can comprise recess part and optional outstanding tip, further to reduce possibility of jamming.
Another selection, in Fig. 6 C, fluid supply line 62 links to each other with fluid feed path 67, and passage 67 forms in the body interior of ejector system 66.In this aspect of the invention, fluid feed path 67 is semicircle, comprises a plurality of injector 70-73, and it designs according to the different injector embodiments that write up above.As for the profile of ejector system, can depend on that the required fluid of concrete application injects type and designs other various changes and modifications, this is conspicuous for the those of ordinary skill that this specification sheets provides the field.
Fig. 7 has shown another aspect of the ejector system embodiment that Fig. 6 A shows.Here, ejector system 90 comprises fluid feed path 64, and it links to each other with a plurality of injector 82-89 with fluid supply line 62.In this aspect of the invention, by on the side opposite of supply line 62 (right side of Fig. 7 axis 81) multi-injector be set more come the even transmission of further enhance fluid in space, sediment chamber 80.In the embodiment shown in fig. 7, four injectors are positioned at the right side of axle 81, and two injectors are positioned at the left side of axle 81.In addition, the size design of each injector 82-89 must be able to be made last than bigger restriction being arranged at convection cell on supply line 62 side farthest near a side (left side of Fig. 7 axis 81) of fluid supply line 62.In this embodiment, the inlet diameter of the axle 81 right side injectors of Fig. 7 demonstration is bigger than the inlet diameter of axle 81 left side injectors.In addition, can be according to the different injector embodiment design injectors that write up above.
Fig. 8 has shown the arc plasma generator 140 of another embodiment of the invention.Plasma generator 140 comprises at least one negative electrode 113, plasma gas supply line 117 and an anode nozzle 119.Producer 140 preferably contains the negative electrode 113 more than.Advantageously, three negative electrodes 113 are arranged.Negative electrode 113 can comprise the tip of the tungsten of tungsten for example or doping thorium.Use thorium that most advanced and sophisticated temperature is remained on below the fusing point of tungsten, thereby avoid tungsten atom to pollute plasma body.Negative electrode 113 can be supported by cathode shell 150, so that each negative electrode 113 is isolated with the wall of cathode branch board 128.
Cathode branch board 128 can suitably be attached to screen 126 and anode nozzle 119 by insulating bolt 127 or by other fastening piece.Preferred screen 126 is by spacer 115 and cathode branch board 128 and anode nozzle 119 electrical isolations.Spacer 115 can comprise for example O shape ring vacuum strip of paper used for sealing, polyvinyl chloride ring and/or boron nitride ring.
Plasma body discharges under high power density and high temperature and is easy to screen 126 and anode nozzle 119 heating.Preferably, screen 126 and anode nozzle 119 comprise cooling-water duct 129.Preferably, passage 129 is circular at plate 126 and nozzle 119 volumes inside.Cross passage 129 with cooling plate 126 and nozzle 119 by the cold water flow that water supply line 169 is supplied with.
Apparatus for coating also comprises at least one reactant supply line.For example, three the reactant supply lines 112,114,116 among Fig. 8 preferably link to each other with injection nozzle 118 and reactant are entered plasma flow by nozzle 118 supplies.Yet, can have one, two, three or more than three reactant supply lines.And the reactant supply line can be positioned at the deposition chamber interior of anode hole 119 tops or close plasma generator.
Injection nozzle 118 preferably comprises the annular ejector system, and it comprises at least one annular reaction thing feed path that is connected on the injector, ring injector 60 as shown in Figure 6A.For example, reactant supply line 114 is connected on the reactant feed path 135 that injection nozzle 118 body interior form.Reactant feed path 135 generally comprises a plurality of injectors 134, and these injectors preferably are evenly distributed on the circumference of passage 135.
In addition, preferably design injector 134 according to above-described injector profile.For example, as shown in Figure 8, will flow into feed path 135 and flow to injector 134 from the reactant of supply line 114.Injector 134 can comprise first channel part 6, second passage part 8, third channel part 10 and tip portion 28, and second passage part 8 is recess parts, and it departs from diameter greater than channel part 6, and this injector is similar to the injector 26 that above Fig. 3 shows.Therefore, reactant will flow out from passage 135, enter plasma body 152 (Fig. 9 demonstration) by injector 134 simultaneously, and it enters the sediment chamber from 119 outflows of anode injector and from some directions.Equally, supply line 116 links to each other with injector 132 with passage 133, and supply line 112 links to each other with injector 130 with passage 131.According to some embodiments of the present invention, reduced the blocked situation of injector 130,132 and 134.
The generation plasma body is described and cambial method on base material 180 referring now to Fig. 9.For in producer 140, forming plasma body, supply with plasma gas by plasma gas supply line 117.Plasma gas can suitably comprise rare gas element such as argon gas or helium, or the gaseous mixture of each component such as nitrogen, carbonic acid gas or hydrogen.If have, then can supply with multiple gases by many supply lines as required more than a kind of plasma gas.Preferably, plasma gas contains argon gas or contains the mixture of argon gas.The pressure of plasma generator 140 ionic medium body gases is kept higher than the environmental stress in the sediment chamber 156, and it is by a pump (not shown) exhaust constantly.Between negative electrode 113 and anode nozzle 119, apply volts DS then, in producer 140, to generate plasma body 152.Then plasma body is expanded under the effect of pressure reduction by anode nozzle 119 holes as plasma flow 152 and entered the sediment chamber.
Reactant is entered plasma flow by supply line 112,114 and/or 116 supplies.Can be by the reactant of supply line supply gas or liquid form, it dissociates in plasma flow.Can be deposited upon on the base material 180 being coated with then, base material 180 is by 182 supportings of base material anchor.Another is selected, can be by evaporation from melting pan or reactant such as metal and semi-conductor reactant by supplied with the steam form by electron beam evaporation.And a part of plasma body is directed pointing to and contains metal or semi-conductive sputtering target, so that the reactant sputter is entered plasma flow.The details of reactant being introduced plasma body is described in detail in the common pending application 09/271,655, and agent docket is RD-26, and 345, C.Iacovangelo and K.Borst, on March 17th, 1999 submitted to, and it is incorporated herein by reference in full at this.
Can on multiple different base material, form multiple different layer by arc plasma process.For example, wear-resistant coating, stress relieving and/or IR filter or UV filtration coating can form on base material such as plastics, glass, quartz, pottery, metal and/or semi-conductor.The non-limitative example of plastic basis material comprises that (General Electric Corporation sells polycarbonate (PC), and trade mark is LEXAN
TM), polyether carbonate (PPC), polyethersulfone (PES) be (with trade mark " Radel
" sell), (General Electric Corporation sells polyetherimide (PEI), and trade mark is ULTEM
TM), (General Electric Corporation sells, and trade mark is MR7 to scribble the polycarbonate substrate of siloxanes hard coat
TMAnd MR10
TM).Can use plastic basis material for example as vehicle window.
For example,, can use supply line 112 that oxygen supply is entered plasma arcs, use supply line 114 to supply with monomeric precursor gases reactant simultaneously in order on base material, to form wearing layer.Can use siloxane reactions thing such as tetramethyl disiloxane (TMDSO), hexamethyldisiloxane (HMDSO) or octamethylcyclotetrasiloxane (D4) on base material, to deposit the silicone layer of oxide-rich.
Another selection can use organometallic compound such as zinc ethyl (DEZ), zinc methide (DMZ), triethylindium (TEI), trimethyl aluminium (TMA) and triethyl aluminum conducts such as (TEA) to be introduced into the reactant source of plasma flow.Can these reactants be introduced plasma flow by means of for example supply line 116.
Certainly, can use supply line 114 to supply with other reactant, on base material, to form plastics or the resin layer that is different from polysiloxane.Another selection can use supply line 114 and 116 to come supply gas, as oxygen, nitrogen and hydrogen; Mineral compound is as ammonia and silane; Organic compound is as hydro carbons, organosilane, organo-siloxane, organosilazanes; The metal of organometallic compound and evaporation is to form metal, semi-conductor, metal oxide, metal nitride or polymer layer, as Zn, Al, In, Si, Sn, ZnO, Al
2O
3, In
2O
3, SiO
2, TiO
2, Ta
2O
5, Nb
2O
3, CeO
2, SnO
2, Si
3N
4, silicon-oxygen nitride, indium-zinc oxide, Zinc-aluminium, indium tin oxide, diamond-like-carbon or plasma polymerization hydro carbons, silane or siloxanes.
The arc plasma body device of this embodiment of the present invention is particularly useful with the glaze layer to the deposition automobile.For the various coatings of deposition on the PC with as the application scenarios such as window, crown head light, aircraft top cover of building in the expansion weather resistance also be useful.In addition, also be useful for the coating solar-energy battery.And the base material that was coated with can be applicable in the various device display windows, as TV screen, LCD screen, flat-panel screens, plasma display panel (PDP), terminal screen and dazzle the eyes protective shield.
Experiment
Carried out two groups of experiments, reduced situation about stopping up with the injector of analyzing the preferred embodiment of the invention.In first group of experiment, in the process of long-time injection running, profile is similar to the injector of interchangeable injector 30 shown in Figure 4 and injector that profile is similar to injector 20 shown in Figure 2 compares.In second group of experiment, in the arc plasma body device, in the multiple injection running, use profile to be similar to the injector of interchangeable injector 30 shown in Figure 4, and detect the deposition characteristics of deposited coatings.
In these two groups experiments, use is similar to arc plasma generator shown in Figure 8 and carries out some experimental coatings runnings.This arc plasma generator comprises a copper anode, and it passes through at least one or the copper screen of a series of electrical isolations and the pin type negative electrode of three tboriated tungsten and separates.Select argon gas (Ar) as plasma gas.Along with Ar flows through the perforation of arc generator, on electrode, apply direct current (DC) voltage to generate plasma body.
Be similar to embodiment shown in Figure 8, the plasma body expansion enters the sediment chamber of decompression by the injection injector, thereby forms plasma jet.
Substrates coated is a PC MR7 sheet material, and size is 4 " * 4 ".Before deposition, in Virahol, clean base material and in flowing nitrogen in 80 ℃ of following dryings at least 12 hours, so that the base material degassing.In the sediment chamber, a plurality of base materials are supported with the direction perpendicular to the plasma jet axle with the metal support frame.Resting support is positioned at apart from about 36 centimeters of anode.
By means of reactant supply line (for example pipeline 112) and reactant injector (for example 130) (as above shown in Figure 8 those) oxygen is introduced plasma body.This device has generated oxygen/argon plasma.
In first group of experiment, running for the first time is 0.047 by conical nozzle and diameter " straight hole injector (referring to for example Fig. 2) carry out.These injectors are arranged in the annular ejector system, and it is similar to the ejector system 60 shown in Fig. 6 A.These injectors are sent tetramethyl disiloxane (TMDSO) into oxygen-argon plasma stream, to deposit wear-resistant coating on the PC base material.The result shows that injector holes is blocked after the following accumulated operating time of delivery rate with 0.3slm (standard liter/min) TMDSO steam is about 3 hours.
Second test is made up of running much at one, has used comparable nozzle, comprises the recess part (referring to for example Fig. 4, injector 30) of inwall with hole enlargement and the tip of stretching out except this injector.In this running, the bore dia of first part 6 is 0.047 " and length is 0.095 ", the injector tip that the angle that second section 8 departs from columniform axle is that about 60 degree and length are 0.015 "; the diameter of third part 10 is 0.102 " and length is 0.075 "; 0.05 " stretches into plasma flow, and wherein the diameter of exterior portion is 0.18 ".To above-mentioned similar condition under continuous operation after 8 hours, the injector of second running does not show noticeable obstruction.Continue the deposition running then, accumulative total altogether 13 hours working time and do not have noticeable obstruction.Therefore, the nozzle injector with ejector system of the preferred aspect of the present invention is not stopped up the ground continuous operating time and has been grown four times than straight hole injector.
In second group of experiment, TMDSO base coating is being similar on the PC MR7 sheet material that is deposited over three 4 " * 4 " under above-mentioned those conditions.In this group experiment, used nozzle with a plurality of injectors, the tip that described injector has the recess part and stretches out, as mentioned above.At nozzle-injector continuous operation before 8 hours (running for the first time) and back (running for the second time) two groups of samples of generation.Determine the quality of deposited coatings at thickness, transparency, Taber wear resistance and band binding property.By use profilometer (Dektak IIA) on base material five different shelter in advance shelter position finding thickness.Determine transparency with " turbidity ", it is the tolerance of well-known window optical clarity.Use Gardner type XL-835 colourimeter to measure turbidity.By being gone up the turbidity reads of changeing front and back with CS-10F wheel (each wheel load 500g) mill 1,000 at Gardner Taber wear resistance determinator (5130 type), sample measures the Taber wear resistance.Measure along equidistant four different positionss of Taber track at each sample.After the effect of Taber instrument, the increase of turbidity note is made the Taber wear resistance.The turbidity increase is more little, and the Taber wear resistance is good more.Following mensuration band binding property: post-depositional coating is cut with the cross hatch cutting machine, sample was immersed in 65 ℃ of water up to 14 days, and every 3-4 days by adhesive tape being used for this coating of test that tears it down again on the coating.The result sorts with 0B-5B, and wherein 0B is stripped from for>65%, and 5B is not stripped from for having to detect.
The result that table 1 provides shows that preferred aspect uses ejector system to obtain practically identical coating characteristic according to the present invention, and these characteristics are meant thickness, transparency, Taber wear resistance and used the band binding property of these injector front and back in continuous 8 hours.
Table 1
Generate the performance of coating before and after 8 hours in nozzle-injector operation
Nozzle-injector condition | Coat-thickness (micron) | Initial turbidity (%) | Taber turbidity increment (%) | Girdle tests/water logging bubble | ||||
vg | tDev | rg | tDev | vg | tDev | My god | 14 days | |
Clean after 8 hours | .7 .4 | .33 .31 | .76 .74 | .14 .13 | .1 .4 | .8 .9 | B B | 5B 5B |
In addition, also tested transmission, octamethylcyclotetrasiloxane (D4) has been sent into oxygen-argon plasma with the speed of 0.2slm D4 steam different reagent with identical nozzle-injector.Continuous operation is found the situation of obstruction after 8 hours.
Though the present invention has been carried out describing in detail and with reference to its specific embodiments, it will be apparent for a person skilled in the art that in the case without departing from the scope of the present invention and can carry out various changes and modifications.
Claims (10)
1. ejector system that is used for fluid injected plasma, it comprises:
Comprise injector (2) and have first matrix surface (14) and the matrix (4) of second matrix surface (12), it comprises:
Extend in the matrix (4) and limit first inwall (3) of first channel part (6) by first matrix surface, be used for flowing of limit fluid reactant, and its profile makes first inwall (3) of first channel part (6) be parallel to first (9), and wherein said first channel part (6) has first diameter; With
Limit second inwall of the second passage part (8) that is communicated with first channel part (6) fluid, and it has the recess part, second inwall of second passage part departs from first (9) at a predetermined angle like this, wherein second passage part (8) has second diameter greater than first diameter, and second passage part (8) makes fluid reactant enter the plasma body by second matrix surface (12) and reduced the formation of colmatation zone between the usage period (19) on second inwall of second passage part (8).
2. the ejector system of claim 1, wherein said predetermined angular are that 20 degree are to 70 degree.
3. the ejector system of claim 1, wherein injector (2) integrally forms on injector matrix (4), and this injector comprises:
First surface (14) in injector matrix (4) is gone up the ingate (5) that forms; With
Second surface (12) in injector matrix (4) is gone up the outlet opening (7) that forms.
4. the ejector system of claim 1, wherein injector (30) can be removed from injector matrix (34).
5. the ejector system of claim 4, wherein injector (30) also comprises the main body (36) with threaded outer wall, and the injector matrix comprises thread jack (38) and is used to install the screw thread injector body.
6. the ejector system of claim 1, described injector also comprises:
Stretch out matrix surface (29) and enter tip portion (28) in the plasma body (18), wherein the diameter of tip portion (28) is greater than the diameter of first channel part (6).
7. the ejector system of claim 6, wherein to stretch out the distance of matrix surface (29) be the 0.001-0.3 inch to tip portion (28).
8. device that is used for coated substrate, it comprises:
Plasma generator (140) with anode (119) and negative electrode (113), it can form the arc plasma (152) of shifting to base material (180);
The sediment chamber (156) that comprises base material anchor (182); With
Be positioned at first ejector system (60) between anode (119) and the base material anchor (182), be used for first reactant is introduced plasma body (152), first ejector system (60) comprises injector (130), and injector (130) comprises:
Limit the first channel part (6) of first reagent flow, its profile makes the inwall (3) of first channel part (6) be parallel to first (9), wherein first channel part (6) have first diameter and
The second passage part (8) that is communicated with the first channel segment fluid flow, it has the recess part, make the inwall (3) of second passage part (8) depart from first (9) at a predetermined angle, wherein second passage part (8) has second diameter greater than first diameter, and wherein second passage part (8) makes fluid reactant enter plasma body and reduced the formation of colmatation zone between the usage period (19) on the inwall of second passage part (8).
9. method that is used for coated substrate, it may further comprise the steps:
(a) first reactant is supplied with first ejector system (60), this service system has the injector (70-76) of the circumferential arrangement of a plurality of longshore current body feed paths (64), wherein each injector comprises first channel part (6) and has the hole (5) that a diameter is enough to limit first reagent flow, with second passage part (8), it is the recess part, make the inwall (3) of second passage part (8) depart from first (9) at a predetermined angle like this, to reduce by first reactant at inwall (3) with stretch into obstruction on the tip portion (28) of plasma body (18);
(b) produce arc plasma;
(c) first reactant is introduced this plasma body; With
(d) first reactant is deposited on the surface of base material (180).
10. equipment that is used for coated substrate, it comprises:
Be used to produce the device of plasma body;
Be used for first reactant is supplied with the device of injector device, described injector device is used for first reactant is introduced plasma stream, and this injector device comprises and is used for first reactant is introduced the device of plasma stream and be used to reduce the device that first reactant stops up on this injector device inwall; Wherein be used for the device that first reactant is introduced plasma body comprised by first matrix surface and extend in the matrix and limit first inwall of first channel part, be used to limit flowing of first reactant, described first channel partly has first diameter and its profile makes first inwall of first channel part be parallel to first; And second inwall of the second passage part that is communicated with the first channel segment fluid flow of qualification, described second passage partly has second diameter greater than first diameter, and have the recess part, like this second inwall of second passage part depart from a predetermined angle first and
Be used for to contain being coated with of first reactant and be deposited upon device on the substrate surface.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/742,837 | 2000-12-20 | ||
US09/742,837 US6641673B2 (en) | 2000-12-20 | 2000-12-20 | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1481449A CN1481449A (en) | 2004-03-10 |
CN1285761C true CN1285761C (en) | 2006-11-22 |
Family
ID=24986451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01820984XA Expired - Fee Related CN1285761C (en) | 2000-12-20 | 2001-10-12 | Injector and method for prolonged introduction of reagents into plasma |
Country Status (10)
Country | Link |
---|---|
US (1) | US6641673B2 (en) |
EP (1) | EP1346080A1 (en) |
JP (1) | JP2004516386A (en) |
KR (1) | KR20030063444A (en) |
CN (1) | CN1285761C (en) |
AU (1) | AU2001296825A1 (en) |
CA (1) | CA2431017A1 (en) |
MX (1) | MXPA03005573A (en) |
RU (1) | RU2291223C2 (en) |
WO (1) | WO2002050335A1 (en) |
Families Citing this family (357)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4553471B2 (en) * | 2000-09-19 | 2010-09-29 | 東京エレクトロン株式会社 | Processing apparatus and processing system |
US6641673B2 (en) * | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
DE60234620D1 (en) * | 2001-09-10 | 2010-01-14 | Univ Virginia | METHOD OF APPLYING METAL ALLOY COATINGS AND COATED COMPONENT |
NL1020634C2 (en) * | 2002-05-21 | 2003-11-24 | Otb Group Bv | Method for passivating a semiconductor substrate. |
JP2005536042A (en) * | 2002-08-08 | 2005-11-24 | トリコン テクノロジーズ リミティド | Improved shower head |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
JP2007525822A (en) * | 2003-05-30 | 2007-09-06 | アヴィザ テクノロジー インコーポレイテッド | Gas distribution system |
KR100870807B1 (en) * | 2003-08-07 | 2008-11-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus and method for manufacturing semiconductor device |
US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US20050098106A1 (en) * | 2003-11-12 | 2005-05-12 | Tokyo Electron Limited | Method and apparatus for improved electrode plate |
KR100958576B1 (en) * | 2003-11-12 | 2010-05-18 | 엘지디스플레이 주식회사 | Fabricating apparatus of display device |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
EP1563899A1 (en) * | 2004-02-13 | 2005-08-17 | Total Petrochemicals Research Feluy | Device and method for the optimization of the injection of reactants into a reactor |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
DE102004029466A1 (en) * | 2004-06-18 | 2006-01-05 | Leybold Optics Gmbh | Medieninjektor |
JP4301094B2 (en) * | 2004-06-25 | 2009-07-22 | トヨタ自動車株式会社 | Fuel or reducing agent addition apparatus and method, and plasma torch |
US20060021703A1 (en) * | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US7722737B2 (en) * | 2004-11-29 | 2010-05-25 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US8236383B2 (en) * | 2007-04-27 | 2012-08-07 | Exatec Llc | Abrasion resistant plastic glazing with in-mold coating |
EP2144958B1 (en) | 2007-05-01 | 2012-01-11 | Exatec, LLC. | Encapsulated plastic panel and method of making the same |
US20080286537A1 (en) * | 2007-05-09 | 2008-11-20 | Christophe Lefaux | Pre-dry treatment of ink in decorative plastic glazing |
CA2718253C (en) * | 2008-03-12 | 2016-04-19 | Ricardo Enrique Biana | Plasma system |
CA2658210A1 (en) * | 2008-04-04 | 2009-10-04 | Sulzer Metco Ag | Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam |
DE102008029681A1 (en) * | 2008-06-23 | 2009-12-24 | Plasma Treat Gmbh | Method and device for applying a layer, in particular a self-cleaning and / or antimicrobial photocatalytic layer, to a surface |
EP2141259B1 (en) * | 2008-07-04 | 2018-10-31 | ABB Schweiz AG | Deposition method for passivation of silicon wafers |
US20100037824A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
EP2159304A1 (en) | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
US8770142B2 (en) * | 2008-09-17 | 2014-07-08 | Veeco Ald Inc. | Electrode for generating plasma and plasma generator |
US8851012B2 (en) * | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US8871628B2 (en) * | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
WO2010095901A2 (en) | 2009-02-23 | 2010-08-26 | Synos Technology, Inc. | Method for forming thin film using radicals generated by plasma |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
TWI385272B (en) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | Gas distribution plate and apparatus using the same |
EP2360293A1 (en) | 2010-02-11 | 2011-08-24 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
EP2362411A1 (en) | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
CN103502333B (en) | 2011-04-14 | 2016-05-04 | 埃克阿泰克有限责任公司 | organic resin laminate |
US8361607B2 (en) | 2011-04-14 | 2013-01-29 | Exatec Llc | Organic resin laminate |
US20120270384A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US20130029136A1 (en) * | 2011-07-27 | 2013-01-31 | Groner Markus D | Transparent Polycarbonate Elements with Alumina Coatings |
JP5708886B2 (en) | 2011-08-26 | 2015-04-30 | エグザテック・リミテッド・ライアビリティー・カンパニーExatec,LLC. | ORGANIC RESIN LAMINATE, ITS MANUFACTURING AND USE METHOD, AND ARTICLE CONTAINING ORGANIC RESIN LAMINATE |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
KR101394265B1 (en) * | 2012-08-22 | 2014-05-13 | 에스엔유 프리시젼 주식회사 | Spraying Nozzle Unit |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US20200173015A1 (en) * | 2013-07-25 | 2020-06-04 | Samsung Display Co., Ltd. | Vapor deposition apparatus |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10683571B2 (en) * | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
WO2015194031A1 (en) * | 2014-06-20 | 2015-12-23 | 株式会社ユーテック | Plasma cvd device and method for producing magnetic recording medium |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
KR101755664B1 (en) * | 2014-07-29 | 2017-07-11 | 주식회사 정화나노엔지니어링 | Equipment for manufacturing nano-sized powder |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
KR102480457B1 (en) * | 2015-07-27 | 2022-12-22 | 삼성디스플레이 주식회사 | Deposition apparatus |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
CN107435139A (en) * | 2016-05-26 | 2017-12-05 | 灿美工程股份有限公司 | Gas distributor and substrate board treatment |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (en) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
DE102017108992A1 (en) * | 2017-04-26 | 2018-10-31 | Khs Corpoplast Gmbh | Device for internal coating of containers |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
TWI791689B (en) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | Apparatus including a clean mini environment |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US20190295822A1 (en) * | 2018-03-20 | 2019-09-26 | Applied Materials, Inc. | Method and apparatus for providing radical species to a processing volume of a processing chamber |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN109382288A (en) * | 2018-09-28 | 2019-02-26 | 江苏柯润玺医疗科技发展有限公司 | A kind of slewing parts surface groove colors in technique |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
TW202405220A (en) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP2020136677A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic accumulation method for filing concave part formed inside front surface of base material, and device |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102638425B1 (en) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for filling a recess formed within a substrate surface |
JP2020133004A (en) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Base material processing apparatus and method for processing base material |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
CN109881138A (en) * | 2019-03-13 | 2019-06-14 | 罗远新 | A kind of protective coating construction technology |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (en) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming topology-controlled amorphous carbon polymer film |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
JP2021064508A (en) * | 2019-10-11 | 2021-04-22 | 東京エレクトロン株式会社 | Plasma processing apparatus |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
TW202140135A (en) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas supply assembly and valve plate assembly |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
TW202203344A (en) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | System dedicated for parts cleaning |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202146831A (en) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Vertical batch furnace assembly, and method for cooling vertical batch furnace |
CN113555279A (en) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride-containing layers and structures including the same |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
TW202147383A (en) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
KR20210145080A (en) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus for depositing thin films using hydrogen peroxide |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
TW202212623A (en) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2527184C3 (en) * | 1975-06-18 | 1981-07-02 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Apparatus for the production of targets for cathode sputtering |
JPS62115827A (en) * | 1985-11-15 | 1987-05-27 | Canon Inc | Fine particle flow controller |
EP0491521B1 (en) * | 1990-12-15 | 1997-03-12 | Fujitsu Limited | Process for producing diamond film |
US5962085A (en) * | 1991-02-25 | 1999-10-05 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
US5679167A (en) * | 1994-08-18 | 1997-10-21 | Sulzer Metco Ag | Plasma gun apparatus for forming dense, uniform coatings on large substrates |
JP3380091B2 (en) * | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | Reactive gas injection head and thin film vapor phase growth apparatus |
TW356554B (en) * | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
US5951771A (en) * | 1996-09-30 | 1999-09-14 | Celestech, Inc. | Plasma jet system |
KR100492258B1 (en) * | 1996-10-11 | 2005-09-02 | 가부시키가이샤 에바라 세이사꾸쇼 | Reaction gas ejection head |
US6110544A (en) | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
US6213049B1 (en) * | 1997-06-26 | 2001-04-10 | General Electric Company | Nozzle-injector for arc plasma deposition apparatus |
US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
US6132552A (en) * | 1998-02-19 | 2000-10-17 | Micron Technology, Inc. | Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
US6123776A (en) | 1998-03-04 | 2000-09-26 | United Microelectronics Corp. | Gas delivering apparatus for chemical vapor deposition |
JP2000038678A (en) | 1998-07-22 | 2000-02-08 | Komatsu Ltd | Plasma torch and feedstock gas introducing method for plasma cvd |
KR100328820B1 (en) * | 1999-02-25 | 2002-03-14 | 박종섭 | Gas injection apparatus of chemical vapor deposition device |
JP2000290777A (en) * | 1999-04-07 | 2000-10-17 | Tokyo Electron Ltd | Gas treating device, buffle member, and gas treating method |
US6170432B1 (en) * | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
US6641673B2 (en) * | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
-
2000
- 2000-12-20 US US09/742,837 patent/US6641673B2/en not_active Expired - Lifetime
-
2001
- 2001-10-12 RU RU2003122206A patent/RU2291223C2/en not_active IP Right Cessation
- 2001-10-12 MX MXPA03005573A patent/MXPA03005573A/en active IP Right Grant
- 2001-10-12 WO PCT/US2001/031920 patent/WO2002050335A1/en active Application Filing
- 2001-10-12 KR KR10-2003-7008280A patent/KR20030063444A/en active IP Right Grant
- 2001-10-12 CN CNB01820984XA patent/CN1285761C/en not_active Expired - Fee Related
- 2001-10-12 CA CA 2431017 patent/CA2431017A1/en not_active Abandoned
- 2001-10-12 AU AU2001296825A patent/AU2001296825A1/en not_active Abandoned
- 2001-10-12 EP EP20010977731 patent/EP1346080A1/en not_active Withdrawn
- 2001-10-12 JP JP2002551207A patent/JP2004516386A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
RU2003122206A (en) | 2005-02-20 |
WO2002050335A1 (en) | 2002-06-27 |
MXPA03005573A (en) | 2003-10-06 |
CA2431017A1 (en) | 2002-06-27 |
US6641673B2 (en) | 2003-11-04 |
EP1346080A1 (en) | 2003-09-24 |
RU2291223C2 (en) | 2007-01-10 |
KR20030063444A (en) | 2003-07-28 |
CN1481449A (en) | 2004-03-10 |
JP2004516386A (en) | 2004-06-03 |
US20020136909A1 (en) | 2002-09-26 |
AU2001296825A1 (en) | 2002-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1285761C (en) | Injector and method for prolonged introduction of reagents into plasma | |
US6397776B1 (en) | Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators | |
EP2261392B1 (en) | Expanding thermal plasma deposition system | |
CN1117890C (en) | Nozzle-injector for arc plasma deposition apparatus | |
KR101177983B1 (en) | Chemical vapor deposition reactor | |
CN1198957C (en) | Protective coating by high rate arc plasma deposition | |
CN100336165C (en) | Gas injection apparatus for semiconductor processing system | |
US20090324847A1 (en) | Method of avoiding a parasitic plasma in a plasma source gas supply conduit | |
JP2013028170A (en) | Method of producing transparent gas barrier film, and organic electroluminescent device | |
JPWO2008096616A1 (en) | Transparent gas barrier film and method for producing the same | |
CN1243846C (en) | Liquid distribution unit for dividing liquid current into plurality of partial currents | |
JPWO2008114627A1 (en) | Antifouling laminate and display front plate | |
US20110311734A1 (en) | Two Layer Barrier on Polymeric Substrate | |
CN1902732A (en) | Edge flow faceplate for improvement of cvd film properties | |
JPWO2006075490A1 (en) | Transparent gas barrier film | |
KR20100077695A (en) | Atomic layer deposition apparatus | |
WO2008001723A1 (en) | Thin film forming apparatus and thin film forming method | |
KR20110074926A (en) | Multiple gas feed apparatus and method | |
KR19990007319A (en) | Nozzle-Injectors for Arc Plasma Deposition Devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |