CN1280179C - Silicon fusion bonding method for MEMS bonding process - Google Patents
Silicon fusion bonding method for MEMS bonding process Download PDFInfo
- Publication number
- CN1280179C CN1280179C CN 200510011437 CN200510011437A CN1280179C CN 1280179 C CN1280179 C CN 1280179C CN 200510011437 CN200510011437 CN 200510011437 CN 200510011437 A CN200510011437 A CN 200510011437A CN 1280179 C CN1280179 C CN 1280179C
- Authority
- CN
- China
- Prior art keywords
- bonding
- silicon chip
- glass
- mems
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Joining Of Glass To Other Materials (AREA)
Abstract
The present invention provides a simple and practical substituting technical method which solves the problem of low production efficiency of bonding technology in the process of producing large-scale MEMS devices. The present invention uses powdered glass as a medium between silicon chips to be bonded, the powdered glass is kept for certain time at a certain temperature after being dissolved in a chemical solvent, and then, screen printing or a rotary coating technique is used for coating a layer of glass pulp on the surface of a lower silicon chip to be bonded; after manual or mechanical collimation, the silicon chips can be bonded by controlling pressure when the silicon chips are bonded, gradient of raising and dropping temperatures, bonding temperatures and bonding time. The present invention has low requirements for the surface smoothness of the silicon chips to be bonded, requirements for bonding equipment are reduced, bonding stress can be greatly reduced by the operation of technical steps without the bonding disadvantages of cavity, etc. commonly appearing in silicon / glass anode bonding, and chip scraping and device production in the field of MEMS processing are accelerated.
Description
Technical field
The invention belongs to MEMS (MEMS) and integrated circuit (IC) encapsulation technology field, be specifically related to a kind of method of carrying out silicon/silicon low melting glass bonding with glass dust.
Background technology
Phase early 1980s, MEMS (MEMS) clearly forms as a very important technology-oriented discipline.The MEMS technology is the extension of microelectric technique and widens that it not only has signal processing function, and has perceptional function and action function to the external world.The novel system of Fa Zhan intellectuality, high functional density will be as microelectric technique the effect of the last century based on this, human society production and life style to 21 century produce revolutionary impact, establish the status of country on international arena, it is the strategic high-tech that concerns that the development of the national economy and national security ensure.
Important economic potential and strategic status in view of the MEMS technology, industrially developed country from the U.S., Japan, Europe, until countries of infant industry such as Korea S, Singapore, and even Taiwan, all recognize development MEMS to the significance of international competitiveness, MEMS and electronic information, Aero-Space etc. are treated as strategic high-tech side by side.The MEMS technology has entered the stage of a development in an all-round way at present.
MEMS processing and manufacturing technology is that Micrometer-Nanometer Processing Technology in the integrated circuit fabrication process and the micromachining technology in the micro mechanics are combined, and produces the new unit of electromechanical or ray machine electricity one.Through years of development, MEMS chip manufacture technology is very ripe, can be used as launch products basically.But the encapsulation technology of MEMS chip does not obtain basic solution, causes the MEMS chip can only rest on laboratory stage at present.In fact, have only the chip that has encapsulated just can become product, could be for people to use.
At present, the MEMS encapsulation technology is by integrated circuit encapsulation technology development and evolution mostly.But the MEMS encapsulation is different from the IC encapsulation of traditional sense.MEMS device or system should the perception worlds, and again according to the information movement response to external world of perception, because this specific (special) requirements of MEMS, the encapsulation that makes MEMS also will be considered the characteristic of MEMS itself except considering the specification requirement of traditional IC encapsulation simultaneously.We can say that the MEMS encapsulation technology is the important core technology that can MEMS successful Application.
Bonding is an important encapsulation technology in MEMS and the IC technology.At present, in MEMS device and chip manufacturing proces, the most frequently used bonding techniques is exactly the silicon/glass anode linkage.The weak point of this technology mainly is a long processing time, surface accuracy requirement to silicon chip and sheet glass is very high, and is relatively harsher to the requirement of equipment, and in scribing processes, increase difficulty of processing and time, be difficult to adapt to the production in enormous quantities of present MEMS device.
Summary of the invention
Main purpose of the present invention be exactly in the present MEMS anode linkage technology to the harsh requirement of raw material and equipment, a kind of simple and easy to do alternative techniques method is provided, solve the low difficult problem of bonding technology production efficiency in extensive MEMS device production.
The present invention adopts following technical proposal to be achieved: the present invention adopts glass dust as the medium for the treatment of between the bonding silicon chip, after being dissolved in the chemical solvent, preserve certain hour at a certain temperature, then by serigraphy or spin coating process, treating the lower silicon slice surface-coated last layer glass paste of bonding, through manually or after machine aims at, pressure and heating and cooling gradient, bonding temperature and time during by the control wafer bonding, finish the bonding of silicon chip and silicon chip.
Specifically may further comprise the steps:
1. formulate glass is starched: according to glass dust and 5: 1 ratio of solvent terpinol, and formulate glass slurry solution; And 320～325 ℃ of preservations 15～25 minutes;
2. clean the silicon chip surface for the treatment of bonding;
3. after waiting the glass paste cool to room temperature, on sol evenning machine, silicon chip is carried out glass paste and apply, perhaps adopt the one side coated glass slurry of the mode of serigraphy at the sealing silicon chip;
4. the direction according to bonding requires to place the silicon chip of wanting bonding: the silicon chip that will treat bonding is placed on the anchor clamps of bonding machine, the picture surface of device silicon chip is downward, treat bonding face upwards, the silicon chip coated side of coated glass slurry is downward, with the device silicon chip treat that bonding face is relative;
5. set vacuum, bonding pressure, set the heating and cooling program;
6. after temperature reaches 420～430 ℃, stop to heat up, and after this temperature stops 15～20 minutes, lower the temperature;
7. after cooling to room temperature, finish the bonding operation.
The present invention compared with prior art has following advantage: the present invention is less demanding to the surface smoothness of the silicon chip of wanting bonding; can in any vacuum drying oven, exert pressure and to realize silicon/silicon bonding; reduced the demand of para-linkage equipment; by described processing step operation; can reduce bonding stress greatly; and the bonding defectives such as cavity that do not have the silicon/glass anode linkage can occur usually can improve scribing speed, improve the device production speed at the MEMS manufacture field greatly.
The specific embodiment
Following more detailed description goes out specific embodiments of the invention:
Embodiment one
Carry out the method for silicon/silicon low melting glass bonding according to of the present invention with glass dust, the concrete steps of embodiment one are as follows:
1. formulate glass slurry: according to glass dust: the ratio of terpinol=5: 1, formulate glass slurry solution; And 320～325 ℃ of preservations 15～25 minutes;
2. clean the silicon chip for the treatment of bonding; Boiled 30 minutes at 95 ℃ with No. 3 washing lotions earlier, deionized water rinsing is clean; Boiled 30 minutes at 95 ℃ with No. 1 liquid then, deionized water rinsing is clean; Boiled 15 minutes at 95 ℃ with No. 2 liquid at last, deionized water rinsing is clean; Silicon chip is put into drier to be dried; All operations all need to carry out having under the environment of extractor fan; Wherein No. 1 liquid is that volume ratio is an ammoniacal liquor: hydrogen peroxide: water=1: 1: 5 or be 1: 1: 7 solution, No. 2 liquid are that volume ratio is a hydrochloric acid: hydrogen peroxide: water=1: 1: 5 or be 1: 1: 7 solution, No. 3 washing lotions are that volume ratio is a sulfuric acid: the solution of hydrogen peroxide=3: 5.
3. after waiting the glass paste cool to room temperature, adopt the one side coated glass slurry of the mode of serigraphy at the sealing silicon chip;
4. the direction according to bonding requires to place the silicon chip of wanting bonding; Concrete steps are: the silicon chip that will treat bonding is placed on the anchor clamps of bonding machine, and the picture surface of device silicon chip is downward, treats bonding face upwards, and the silicon chip coated side of coated glass slurry is downward, with the device silicon chip treat that bonding face is relative;
5. setting vacuum is the 1e-4 torr, and bonding pressure 500N sets the heating and cooling program: 3 ℃/minute of intensification thermogrades;
6. after temperature reaches 420～430 ℃, stop to heat up, and after this temperature stops 15～20 minutes, lower the temperature, the cooling gradient is 2 ℃/minute;
7. after cooling to 25 ℃, close the bonding machine, take out bonding pad, promptly finish the bonding operation.
Embodiment two
Carry out the method for silicon/silicon low melting glass bonding according to of the present invention with glass dust, the concrete steps of embodiment two are as follows:
1. formulate glass slurry: according to glass dust: the ratio of terpinol=5: 1, formulate glass slurry solution; And preserved 15～25 minutes at 320～325 ℃;
2. behind the glass paste cool to room temperature, set rotating speed 3000～4000rpm/min on sol evenning machine, 25～30 seconds time carried out glass paste and applies;
3. treat the cleaning of bonding silicon chip according to the method for embodiment one;
4. the direction according to bonding requires to place the silicon chip of wanting bonding: the silicon chip that will treat bonding is placed on the anchor clamps of bonding machine, the picture surface of device silicon chip is downward, treat bonding face upwards, the silicon chip coated side of coated glass slurry is downward, with the device silicon chip treat that bonding face is relative;
5. setting vacuum is the 1e-4 torr, and bonding pressure 500N sets the heating and cooling program: 3 ℃/minute of heating gradients;
6. after temperature reaches 420～430 ℃, stop to heat up, and after this temperature stops 15～20 minutes, lower the temperature, the cooling gradient is 2 ℃/minute;
7. after cooling to 25 ℃, close the bonding machine, take out bonding pad, finish this bonding operation.
Although disclose specific embodiments of the invention for the purpose of illustration, it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to the disclosed content of most preferred embodiment.
Claims (9)
1. a low melting glass bonding method that is used for the MEMS bonding technology adopts glass dust as the medium for the treatment of between the bonding silicon chip, and concrete steps are as follows:
1) according to glass dust and 5: 1 ratio of solvent terpinol, formulate glass slurry solution;
2) clean the silicon chip surface for the treatment of bonding;
3) etc. behind the glass paste cool to room temperature, silicon chip is carried out glass paste apply;
4) direction according to bonding requires to place the silicon chip of wanting bonding;
5) set vacuum and bonding pressure, and set the heating and cooling program;
6) after temperature reaches 420～430 ℃, stop to heat up, and after this temperature stops 15～20 minutes, lower the temperature;
7) cool to room temperature after, finish bonding operation.
2. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1 is characterized in that: the glass paste for preparing was preserved 15～25 minutes at 320～325 ℃ earlier before being coated on the silicon chip.
3. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1 is characterized in that, when coated glass is starched solution on silicon chip, adopts sol evenning machine to apply.
4. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1 is characterized in that: when coated glass is starched solution on silicon chip, adopt the one side coated glass slurry of the mode of serigraphy at the sealing silicon chip.
5. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1, it is characterized in that: place when wanting the silicon chip of bonding, the silicon chip for the treatment of bonding is placed on the anchor clamps of bonding machine, the picture surface of device silicon chip is downward, treat that bonding face upwards, the silicon chip coated side of coated glass slurry is downward, with the device silicon chip treat that bonding face is relative.
6. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1, it is characterized in that: specifically being set at of vacuum, bonding pressure and heating and cooling program, vacuum is the 1e-4 torr, bonding pressure 500N, 3 ℃/minute of intensification thermogrades, the cooling gradient is 2 ℃/minute.
7. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1 is characterized in that, the concrete steps of cleaning the silicon chip surface for the treatment of bonding are: boiled 30 minutes at 95 ℃ with No. 3 washing lotions earlier, deionized water rinsing is clean; Boiled 30 minutes at 95 ℃ with No. 1 liquid then, deionized water rinsing is clean; Boiled 15 minutes at 95 ℃ with No. 2 liquid at last, deionized water rinsing is clean; Silicon chip is put into drier to be dried; All operations all need to carry out having under the environment of extractor fan; Wherein No. 1 liquid is that volume ratio is an ammoniacal liquor: hydrogen peroxide: water=1: 1: 5 or be 1: 1: 7 solution, No. 2 liquid are that volume ratio is a hydrochloric acid: hydrogen peroxide: water=1: 1: 5 or be 1: 1: 7 solution, No. 3 washing lotions are that volume ratio is a sulfuric acid: the solution of hydrogen peroxide=3: 5.
8. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 3, it is characterized in that: when adopting sol evenning machine to carry out the glass paste coating, set rotating speed 3000～4000rpm/min on the sol evenning machine, 25～30 seconds time carried out glass paste and applies.
9. the low melting glass bonding method that is used for the MEMS bonding technology according to claim 1 is characterized in that, finishes bonding and is operating as: after cooling to 25 ℃, close the bonding machine, take out bonding pad, finish the bonding operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510011437 CN1280179C (en) | 2005-03-17 | 2005-03-17 | Silicon fusion bonding method for MEMS bonding process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510011437 CN1280179C (en) | 2005-03-17 | 2005-03-17 | Silicon fusion bonding method for MEMS bonding process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1663907A CN1663907A (en) | 2005-09-07 |
| CN1280179C true CN1280179C (en) | 2006-10-18 |
Family
ID=35035249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510011437 Expired - Fee Related CN1280179C (en) | 2005-03-17 | 2005-03-17 | Silicon fusion bonding method for MEMS bonding process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1280179C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100404452C (en) * | 2005-12-13 | 2008-07-23 | 武汉理工大学 | Process for super low temp, anode bonding of microcrystal glass and stainless steel and apparatus thereof |
| CN110540172A (en) * | 2019-09-03 | 2019-12-06 | 西安增材制造国家研究院有限公司 | bonding method of MEMS wafer in MEMS packaging process |
| CN116632507B (en) * | 2023-07-21 | 2023-10-10 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
-
2005
- 2005-03-17 CN CN 200510011437 patent/CN1280179C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1663907A (en) | 2005-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109671614B (en) | Wafer bonding method | |
| CN1280179C (en) | Silicon fusion bonding method for MEMS bonding process | |
| CN106082239B (en) | A kind of high-purity low-iron quartz sand purifying preparation method | |
| CN107585762A (en) | A kind of modification method of copper foil substrate graphene transfer | |
| CN103035483B (en) | A kind of interim bonding being applied to thin silicon wafer conciliates separating process method | |
| CN104086791B (en) | A kind of optical characteristics controllable shape memory polymer film and preparation method thereof | |
| CN104324922A (en) | Method for removing adhesive residue of touch screen | |
| CN112397422B (en) | Wafer deep hole electroplating pretreatment wetting method | |
| CN110052917A (en) | A kind of sapphire polishing processing method based on concretion abrasive technology | |
| CN1382626A (en) | Process for synthesizing nano linear carbon array | |
| CN114367730B (en) | Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect tensile structure | |
| CN113968742B (en) | Copper-clad substrate with high heat conductivity and high stability and processing technology thereof | |
| CN105957800B (en) | A kind of process of surface treatment of substrate | |
| CN111453720A (en) | Graphene transfer method with copper foil as substrate | |
| CN108101378A (en) | A kind of chemical thinning processes of silicate glass containing boron and aluminium without alkali | |
| CN105821646A (en) | Method for improving moisture absorption performance of kapok fiber through corona treatment | |
| CN111943133A (en) | Micro-channel chip-PDMS-nano structure chip bonding method | |
| CN101872718B (en) | Preparation method of graphene wafer | |
| CN107237141A (en) | The preparation method that the hydrophobic polyimides that a kind of surface is modified is weaved cotton cloth | |
| CN107598183B (en) | Macroscopic quantity preparation method of nano-silver particles | |
| CN105622166B (en) | A kind of processing method on silane coupler modified titanium boride ceramics surface | |
| CN106430165A (en) | Preparation method of high-quality low-defect single-layer graphene | |
| DE10328845A1 (en) | Process for the wet-chemical surface treatment of a semiconductor wafer | |
| CN108101031A (en) | A kind of preparation method of diadust surface in situ growth graphene layer | |
| CN109860024B (en) | Cleaning method for reducing granularity of wafer surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061018 Termination date: 20120317 |