CN107585762A - A kind of modification method of copper foil substrate graphene transfer - Google Patents
A kind of modification method of copper foil substrate graphene transfer Download PDFInfo
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- CN107585762A CN107585762A CN201710683280.4A CN201710683280A CN107585762A CN 107585762 A CN107585762 A CN 107585762A CN 201710683280 A CN201710683280 A CN 201710683280A CN 107585762 A CN107585762 A CN 107585762A
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- copper foil
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Abstract
The present invention relates to a kind of modification method of copper foil substrate graphene transfer, copper foil substrate graphene is cleaned up with deionized water first, and is dried in a vacuum；The PMMA solution configured is uniformly spin-coated on graphene/copper foil, forms PMMA/ graphenes/copper foil composite bed；Then it is placed in heating furnace and heats, be cooled back to room temperature, to form supporter；Etched again with watery hydrochloric acid, eliminate copper-based bottom.The present invention employs RCA ablutions processing target substrate silicon chip to improve the quality of transfer graphene, then is placed on PMMA/ graphenes are compound on silicon chip, and then silicon chip substrate is heated.Then composite bed is soaked to remove PMMA with acetone soln, finally successfully obtain silicon base graphene.The present invention reduces the defects of the gauffer of graphene, crack, the metal particulate in target substrate is at utmost eliminated after transfer, strengthen its hydrophily, drastically increase graphene transfer mass.
Description
Technical field：
The invention belongs to the transfer techniques field of metallic substrates graphene, refers in particular to a kind of changing for copper foil substrate graphene transfer
Good recipe method.
Background technology：
Graphene is a kind of Novel Carbon Nanomaterials of an only carbon atomic layer thickness, and thickness in monolayer only has
0.3554nm.Graphene not only has the peculiar property of nano material, and has high hardness, be nowadays in the world we
The intensity highest material understood, tensile strength 125GPa, modulus of elasticity are up to 1.1TPa height.And graphene is normal
Thermal conductivity under environmental condition is 5x103W/ (mK), this is higher by an order of magnitude than the thermal conductivity of copper under equal conditions.Stone
Black alkene has excellent optical clarity (absorptivity of light only has 2.3%), up to high conductivity and 2630m2/ g theory
Specific surface area.Due to these unique superior functions, graphene be widely used in microcomputer, screen display, sensor,
Solar cell, semi-conducting material, protective coating field and play an important role.
Since 2004 come out, how graphene efficiently prepares the close pass that just attract scientific research personnel always
Note, the theory for preparing graphene also emerge in an endless stream with method.In addition to having traditional mechanical stripping and oxidation-reduction method, also have
The chemical vapour deposition technique (CVD) and epitaxial growth method being widely used later, at present induced with laser prepare graphene technology
Also the focus of research is turned into.Wherein chemical vapour deposition technique can prepare graphene, most Research Prospects on a large scale.Chemical gaseous phase
Sedimentation general principle is using carbon compound as carbon source, in the vacuum environment of HTHP, decomposes it and removes hydrogen member
Element, carbon is set to be recombinated on the base material with catalytic activity, and then the method for growing into graphene film.
Prepare graphene and commonly use copper-based bottom, due to the characteristic of this low molten carbon amounts, large area is prepared on copper surface, the number of plies can
The continuous graphite alkene of control is more for possibility.But in the commercial Application of reality, it is often necessary to which the graphene of preparation is shifted
Onto other materials, this just proposes challenge for the transfer of graphene.Graphene transfer has following two methods：Traditional polymerization
Thing transfer method, direct transfer process and extensive volume to volume transfer method.
LI.X.S in 2009 et al. successfully realizes the separation by graphene and copper-based bottom, and specific transfer process is：First
One layer of PMMA of spin coating on graphene/Cu paper tinsels, then heating solidifies PMMA, then dissolves Cu substrates with corrosive liquid, is transferred to
PMMA films are eliminated after target substrate with acetone soln again.This Method And Principle is fairly simple, but after the transfer of this method
Graphene is easily cracked, and PMMA can not be removed completely, and metallic solution can remain, and causes graphene transfer mass not
It is high.
The content of the invention：
In order to reduce transfer after graphene gauffer, crack the defects of, at utmost remove target substrate on metal
Grain thing and organic matter, strengthen its hydrophily, are greatly enhanced graphene transfer mass, the invention provides a kind of copper foil substrate stone
The modification method of black alkene transfer.
To achieve these goals, the modification method of a kind of copper foil substrate graphene transfer provided by the invention, specific step
It is rapid as follows：A. the copper foil substrate graphene sample prepared is cleaned up with deionized water, and puts and be dried in a vacuum；B.
Polymethyl methacrylate solution is configured, and polymethyl methacrylate solution is uniformly spin-coated on spin coater copper foil substrate stone
On black alkene, copper foil substrate graphene composite bed is formed；C. the copper foil substrate graphene composite bed in step B is heat-treated,
Cooling treatment is carried out again, to form supporter in copper foil substrate graphenic surface；D. the copper foil substrate graphene in step C is answered
Conjunction layer, which is placed in watery hydrochloric acid, to be etched, and to remove copper foil substrate, obtains polymethyl methacrylate base bottom graphene, and use deionization
Water cleans up；E. the polymethyl methacrylate base bottom graphene in step D is placed on silicon chip, then its silicon chip carried out
Heat, form polymethyl methacrylate base bottom graphene composite bed；F. the polymethyl in acetone soak step E is used
Sour carbomethoxy bottom graphene composite bed, polymethyl methacrylate base bottom is removed, and cleaned up with deionized water, heating, drying
It can obtain the graphene of silicon base.
In such scheme, in the step E, silicon chip needs to carry out RCA ablution processing in advance.
In such scheme, the processing step of the RCA ablutions is：First with 20:1:1 H2O/H2O2/ HCl solution removes
Sodium, iron, the magnesium ion of residual, then with 20:1:1 H2O/H2O2/NH4OH solution removes the organic matter of silicon chip surface, per treatment
Step finally will repeatedly be rinsed using deionized water.
In such scheme, the polymethyl methacrylate solution is by chlorobenzene solution and polymethylmethacrylate powder
Configuration forms.
In such scheme, the polymethyl methacrylate solution is by 1.1g/ml chlorobenzene solutions and polymethylacrylic acid
Methacrylate powder is prepared, mass fraction 10%.
In such scheme, the copper foil substrate graphene in step A is the copper foil being prepared by chemical vapour deposition technique
Substrate graphene.
In such scheme, the range of speeds of the spin coater employed in step B is 500-8000rpm, spin coating time 0-60s
It is adjustable；In experiment during spin coating polymethyl methacrylate solution, the first spin coating 10s under 600r/min, then under 5000r/min
60s is maintained, coating is no more than 1um.
In such scheme, the heat treatment method in step C is：100 DEG C are increased to 10 DEG C/min firing rate.
In such scheme, the mass fraction of the watery hydrochloric acid in step D is 7%.
In such scheme, it is high by 100 that the heat treatment temperature in step E compares PMMA glass temperature
℃。
Beneficial effects of the present invention：(1) compared to traditional polymer transfer method, invention increases heat treatment and right
The defects of target substrate has carried out the processing of RCA ablutions, and it can not only reduce the gauffer of transfer graphene, and remove significantly
Remaining metal particulate and organic matter, strengthen its hydrophily, the contact area of such graphene and silicon chip in target substrate
Increase, that unfolds more increases, and in material for transfer, the damage to graphene is less, is advantageous to improve the global transfer of graphene
Quality.(2) present invention employs RCA ablution cleaning silicon chips, the metal particulate and organic matter of silicon face are greatly reduced
Deng impurity, the hydrophily of silicon chip is enhanced, it is contacted the gauffer and defect for fully, reducing graphene transfer with graphene,
Improve graphene transfer mass.(3) polymethyl methacrylate/graphene is also placed on silicon chip by the present invention, then it is entered
Row heat treatment, be advantageous to soften polymethyl methacrylate, reduce the gauffer that graphene contacts with polymethyl methacrylate and lack
Fall into, improve the transfer mass of graphene.
Brief description of the drawings：
Fig. 1 is the flow chart of graphene transfer.
Fig. 2 is that untreated silicon chip directly shifts the optical picture that graphene obtains.
Fig. 3 is that untreated silicon chip directly shifts the scanning electron microscope (SEM) photograph that graphene obtains.
Fig. 4 is the optical imagery that graphene is shifted on the silicon chip after RCA processing
Fig. 5 is the scanning electron microscope (SEM) photograph that graphene is shifted on the silicon chip after RCA processing.
Embodiment：
Below in conjunction with the accompanying drawings, technical scheme is described in detail.
As shown in figure 1, a kind of modification method for copper foil substrate graphene transfer that the present embodiment provides comprises the following steps that：
A. it will be cleaned and done with deionized water by the copper foil graphene sample that chemical vapour deposition technique (CVD) is prepared
Only, and put two hours are dried in a vacuum.
B. polymethyl methacrylate solution is prepared with chlorobenzene solution and polymethylmethacrylate powder, the present embodiment is adopted
Prepared with 1.1g/ml chlorobenzene solutions and PMMA powder, obtain the polymethyl methacrylate solution that mass fraction is 10%.Use again
Spin coater is uniformly spin-coated on PMMA solution on graphene/copper foil.Its object is to：Polymethylmethacrylate powder is soluble in
Chlorobenzene, for the polymethyl methacrylate solution being configured in order to be spin-coated on graphene copper foil, heating is cooled into supporter,
To remove copper foil.The spin coater range of speeds employed in the present embodiment is 500-8000rpm, and spin coating time, 0-60s was adjustable.It is real
When testing middle spin coating PMMA solution, first the spin coating 10s under 600r/min, then maintains 60s under 5000r/min, coating is not surpassed
1um is crossed, coating can not be too thick, and waste of materials, the later stage is not easy to remove；Also can not be too thin, otherwise it is difficult to play polymethylacrylic acid
The effect of methyl esters supporter.
C. polymethyl methacrylate/graphene/copper foil composite bed is heat-treated, is cooled back to room temperature to form branch
Thing is supportted, its object is to：It is in order that polymethyl methacrylate solidification, forms polymethyl first to heat and be cooled to room temperature afterwards
Sour methyl esters supporter, in order to by the subsequent transfer of graphene.In the present embodiment, it is increased to 10 DEG C/min firing rate
100 degree to 110 degree, polymethyl methacrylate can be advantageous to using such uniform heating pattern and be heated evenly, formation
Supporter shape is uniform, improves the transfer mass of graphene.
D. and then heat treated polymethyl methacrylate graphene/copper foil composite bed is placed in watery hydrochloric acid and etches 1
Hour, copper foil substrate is removed, obtains polymethyl methacrylate/graphene, then cleaned up with deionized water.The present embodiment
In, watery hydrochloric acid mass fraction is 7, and watery hydrochloric acid mass fraction can not be too high, and otherwise corrosivity is too strong, destroys the quality of graphene；
Also must not be low, the time for otherwise corroding copper-based bottom is enough long.
E. RCA ablution processing is carried out to target substrate silicon chip.Its object is to：Remove the organic matter and gold of silicon chip surface
Metal particles thing, the hydrophily of silicon chip is improved, so as to improve the transfer mass of graphene.In the present embodiment, RCA ablutions, tool
Body operating procedure is first with 20:1:1 H2O/H2O2/ HCl solution removes the sodium of residual, iron, other ions such as magnesium, then with 20:1:
1 H2O/H2O2/NH4OH solution removes the organic matter of silicon chip surface.Because heating can cause H2O2Decomposition, generate oxygen, gas
Steep oneself-meeting and the integrality of graphene-structured is caused damage, so both solution are all diluted to 20 by us:1:1, at room temperature
Cleaned, the pattern of graphene will not be destroyed on this condition, and transfer mass is guaranteed.Treated in RCA ablutions
Cheng Zhong, each processing step finally will repeatedly be rinsed well using deionized water can, the purpose being cleaned multiple times：Due to
RCA ablutions, after each solution cleaning, some residue particles etc. may be remained, it is necessary to be cleaned up with deionized water, and
In order to improve the transfer mass of graphene.
F. polymethyl methacrylate/graphene is placed on treated silicon chip, then its silicon chip is carried out at heating
Reason, the temperature of heating is higher than PMMA glass temperature 100 DEG C, in order to soften polymethyl
Sour methyl esters, reduce graphene transfer when gauffer the defects of, improve transfer mass.
G. acetone soak polymethyl methacrylate/graphene/hour of Si composite beds two is used, because acetone is poly- methyl
The good solvent of methyl acrylate, this makes it possible to remove polymethyl methacrylate, cleaned up with deionized water, heating, drying
It can obtain the graphene of silicon base.
Fig. 2 and Fig. 3 is that untreated silicon chip directly shifts optical picture and scanning electron microscope (SEM) photograph that graphene obtains, Fig. 4 and
Fig. 5 is the optical imagery and scanning electron microscope (SEM) photograph that graphene is shifted on the silicon chip after RCA processing；Can be apparent from Fig. 2 and Fig. 3
It can be seen that obtained silicon substrate graphene has some gauffer defects, there are some damaged apertures, and the silicon substrate in Fig. 3 and Fig. 4
Although graphene, there is also some problems, obvious transfer mass to improve, and both, which are contrasted, can more embody RCA ablutions
Necessity.
Claims (10)
1. a kind of modification method of copper foil substrate graphene transfer, it is characterised in that including following steps：
A. the copper foil substrate graphene sample prepared is cleaned up with deionized water, and puts and be dried in a vacuum；
B. polymethyl methacrylate solution is configured, and polymethyl methacrylate solution is uniformly spin-coated on copper foil with spin coater
On substrate graphene, copper foil substrate graphene composite bed is formed；
C. the copper foil substrate graphene composite bed in step B is heat-treated, then carries out cooling treatment, with copper foil substrate stone
Black alkene surface forms supporter；
D. the copper foil substrate graphene composite bed in step C is placed in watery hydrochloric acid and etched, to remove copper foil substrate, obtain poly- first
Base methyl acrylate substrate graphene, and cleaned up with deionized water；
E. the polymethyl methacrylate base bottom graphene in step D is placed on silicon chip, then its silicon chip is carried out at heating
Reason, form polymethyl methacrylate base bottom graphene composite bed；
F. the polymethyl methacrylate base bottom graphene composite bed in acetone soak step E is used, removes poly-methyl methacrylate
Ester group bottom, and cleaned up with deionized water, heating, drying is the graphene that can obtain silicon base.
A kind of 2. modification method of copper foil substrate graphene transfer according to claim 1, it is characterised in that the step
In E, silicon chip needs to carry out RCA ablution processing in advance.
A kind of 3. modification method of copper foil substrate graphene transfer according to claim 2, it is characterised in that the RCA
The processing step of ablution is：First with 20:1:1 H2O/H2O2/ HCl solution removes the sodium, iron, magnesium ion of residual, then with 20:
1:1 H2O/H2O2/NH4OH solution removes the organic matter of silicon chip surface, and step per treatment will finally be entered using deionized water
Row repeatedly rinses.
4. the modification method of a kind of copper foil substrate graphene transfer according to claim 1 or 2, it is characterised in that described
Polymethyl methacrylate solution is formed by chlorobenzene solution and polymethylmethacrylate powder configuration.
A kind of 5. modification method of copper foil substrate graphene transfer according to claim 4, it is characterised in that the poly- first
Base methyl acrylate solution is prepared by 1.1g/ml chlorobenzene solutions and polymethylmethacrylate powder, mass fraction 10%.
A kind of 6. modification method of copper foil substrate graphene transfer according to claim 1 or 2, it is characterised in that step A
In copper foil substrate graphene be the copper foil substrate graphene being prepared by chemical vapour deposition technique.
A kind of 7. modification method of copper foil substrate graphene transfer according to claim 1 or 2, it is characterised in that step B
Employed in the range of speeds of spin coater be 500-8000rpm, spin coating time, 0-60s was adjustable；The poly- methyl-prop of spin coating in experiment
During e pioic acid methyl ester solution, first the spin coating 10s under 600r/min, then maintains 60s under 5000r/min, is no more than coating
1um。
A kind of 8. modification method of copper foil substrate graphene transfer according to claim 1 or 2, it is characterised in that step C
In heat treatment method be：100 DEG C are increased to 10 DEG C/min firing rate.
A kind of 9. modification method of copper foil substrate graphene transfer according to claim 1 or 2, it is characterised in that step D
In watery hydrochloric acid mass fraction be 7%.
10. the modification method of a kind of copper foil substrate graphene transfer according to claim 1, it is characterised in that in step E
Heat treatment temperature to compare PMMA glass temperature high 100 DEG C.
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| CN108507719A (en) * | 2018-03-26 | 2018-09-07 | 合肥工业大学 | A method of referance leak is made based on graphene self-defect |
| CN109573995A (en) * | 2018-11-15 | 2019-04-05 | 南京邮电大学 | A kind of method that basic anhydride are grapheme modified |
| CN110156001A (en) * | 2019-07-11 | 2019-08-23 | 电子科技大学 | A method of transfer graphene film |
| CN112978711A (en) * | 2021-03-23 | 2021-06-18 | 北京科技大学 | Method for transferring large-area graphite alkyne film |
| CN113247885A (en) * | 2021-06-08 | 2021-08-13 | 绍兴熠研科技发展有限公司 | Preparation method of nitrogen-doped graphene, graphene and application |
| WO2021159663A1 (en) * | 2020-02-12 | 2021-08-19 | Zhejiang University | Method for transferring graphene film |
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| CN108507719A (en) * | 2018-03-26 | 2018-09-07 | 合肥工业大学 | A method of referance leak is made based on graphene self-defect |
| CN109573995A (en) * | 2018-11-15 | 2019-04-05 | 南京邮电大学 | A kind of method that basic anhydride are grapheme modified |
| CN110156001A (en) * | 2019-07-11 | 2019-08-23 | 电子科技大学 | A method of transfer graphene film |
| WO2021159663A1 (en) * | 2020-02-12 | 2021-08-19 | Zhejiang University | Method for transferring graphene film |
| CN112978711A (en) * | 2021-03-23 | 2021-06-18 | 北京科技大学 | Method for transferring large-area graphite alkyne film |
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| CN113247885A (en) * | 2021-06-08 | 2021-08-13 | 绍兴熠研科技发展有限公司 | Preparation method of nitrogen-doped graphene, graphene and application |
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