CN1274877C - Chemical Vapor deposition process of tungsten atom layer - Google Patents
Chemical Vapor deposition process of tungsten atom layer Download PDFInfo
- Publication number
- CN1274877C CN1274877C CN 02103508 CN02103508A CN1274877C CN 1274877 C CN1274877 C CN 1274877C CN 02103508 CN02103508 CN 02103508 CN 02103508 A CN02103508 A CN 02103508A CN 1274877 C CN1274877 C CN 1274877C
- Authority
- CN
- China
- Prior art keywords
- reactant gases
- tungstenic
- atomic
- chemical vapor
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a method for depositing atom layers in a tungstenic metal chemical vapor deposition method, which comprises the following procedures: (a) first reaction gas is used to carry out a chemical vapor deposition procedure to form an atom depositing layer of first reaction gas; (b) the residual gas of the first reaction gas after reaction is pumped out; (c) a second tungstenic reaction gas is used to carry out a chemical vapor deposition procedure to form an atom depositing layer of second tungstenic reaction gas corresponding to the atom depositing layer of first reaction gas; (d) the residual gas of the second tungstenic reaction gas after reaction is pumped out; (e) procedures from (a) to (d) are repeated for at least one time to form a cycle period; (f) in the cycle period, (c) and (d) are selected to be repeatedly implemented for at least one time in partial cycle period.
Description
Technical field
The invention relates to a kind of tungsten metallization vapour deposition process, particularly learn the method for the ald of vapour deposition process relevant for a kind of tungsten metallization that reduces resistivity.
Background technology
Refractory metal and silicide thereof have been widely used in the manufacturing of super large-scale integration.Especially, form film because its chemical stability reaches easily with the chemical vapor deposition (CVD) method, tungsten (W) metal generally is used to make the electrical contact hole of silicon assembly.Tungsten silicide (WSi
2) then normally optionally be formed on the silicon material surface that exposes, it is deposition one tungsten layer earlier, and heating anneal makes tungsten and the reaction of silicon material, removes unreacted tungsten layer then, promptly stays the tungsten silicide that is positioned at the silicon top.
As an electro-conductive material, the status of tungsten and too late aluminium, the latter has been used as main conductor almost for 40 years in the microelectronic chip technical field.But, tungsten metal and compound thereof have many excellent characteristic, make its become make metal level to contact hole, contact hole connector, compound crystal silicide gate electrode and the layer of silicon layer/important materials during the interlayer internal connecting line.For a long time, the deposition technique of tungsten just constantly develops to provide best properties of combination to meet specific application.In many examples, consequently with hydrogen (H
2) and silicomethane (SiH
4) reduction processing procedure and deposition program usefulness also in same step, character such as balance tackyness, crystal particle structure, edges cover, sheet resistance and stress whereby are to provide high-quality tungsten contact plunger and internal connecting line.Wherein the tungsten that forms with the CVD method has low-stress and (is lower than 5 * 10
9Dynes/cm
2), the thermal expansivity suitable and for the high resistant resistance (electromigration is to use aluminum metal and the common problem of alloy material thereof) of electromigration with the silicon material.The CVD tungsten layer can use hydrogen or silicomethane (si1ane) reduction tungsten hexafluoride (WF down for about 450 ℃ in temperature
6) deposition and get, good thickness evenness is arranged.
Wherein with ald (Atomic Layer Deposition, ALD) CVD method, formed tungsten metal deposit splendid gradient coating performance (StepCoverage), but it still has the generation of impurity atoms in the atomic substitutions process, and then influence resistivity, make R
cValue increases.Shown in Figure 1A to Fig. 1 D, in Figure 1A,, will act on residual gas then and extract (not being shown among the figure) in a vacuum chamber 10, feeding silicomethane gases 14 to form a silicomethane atomic shell on base material 12.In Figure 1B, add tungsten hexafluoride 11 in this vacuum chamber 10, with this silicomethane atomic shell reaction, will act on residual gas then and extract (not being shown among the figure).In Fig. 1 C, be this silicomethane atomic shell and 11 effects of this tungsten hexafluoride, formation one contains the tungsten atom layer of impurity silicon.Repeat to implement above-mentioned steps, shown in Fig. 1 D,, in tungsten atom layer deposition (ALD) replacement process,, and then can influence the resistivity of tungsten metal level, make its R because the generation of impurity Siliciumatom is arranged with forming a tungsten metal level that contains impurity silicon
cValue increases.
Summary of the invention
In view of this, in order to address the above problem, main purpose of the present invention is to provide a kind of tungsten metallization to learn the sedimentary method of atomic shell in the vapour deposition process, comprise the following steps: that (a) uses one first reactant gases to carry out chemical vapor deposition process, to form one first reactant gases atomic deposition layer; (b) residual gas that this first reactant gases is done to use up extracts; (c) use one second tungstenic reactant gases to carry out chemical vapor deposition process, to form second a tungstenic reactant gases atomic deposition layer with respect to this first reactant gases atomic deposition layer; (d) residual gas that this second tungstenic reactant gases is done to use up extracts; (e) repeat above-mentioned (a) to (d) step at least once, form loop cycle; (f) in above-mentioned loop cycle, select to repeat implementation step (c) and (d) at least once in partial periodicity.
Description of drawings
Figure 1A is in vacuum chamber, uses one first reactant gases to carry out chemical vapor deposition process;
Figure 1B is in vacuum chamber, uses one second tungstenic reactant gases to carry out chemical vapor deposition process, to form second a tungstenic reactant gases atomic deposition layer with respect to this first reactant gases atomic deposition layer;
Fig. 1 C is in vacuum chamber, silicomethane (SiH
4) atomic shell and tungsten hexafluoride (WF
6) the gas effect;
Fig. 1 D is for after repeating to implement the atomic substitutions deposition step, and formation one contains the tungsten metal level of impurity silicon;
Fig. 2 is one deck silicomethane (SiH
4) atomic shell storehouse one deck tungsten hexafluoride (WF
6) atomic shell, repeat at least once, to form a loop cycle;
Fig. 3 is in the present invention in partial periodicity, repeats to implement the chemical vapor deposition process step of tungstenic reactant gases and residual gas that this tungstenic reactant gases is done to use up extracts step at least once;
Fig. 4 is for after repeating to implement the atomic substitutions deposition step, and formation one does not contain the tungsten metal level of impurity.
The figure number explanation:
10～vacuum chamber
11～tungsten hexafluoride
12～base material
14～silicomethane gases
20～silicomethane atomic shell
22～tungsten hexafluoride atomic shell
Embodiment
The present invention's experiment is learned the sedimentary method of atomic shell in the vapour deposition process for a kind of improvement tungsten metallization, comprise the following steps: shown in Figure 1A, in a vacuum chamber 10, use one first reactant gases to carry out chemical vapor deposition process, to form one first reactant gases atomic deposition layer, wherein this first reactant gases is H
2, SiH
4, Si
2H
6, B
2H
6, PH
3Wait one of them, and then the residual gas that this first reactant gases is done to use up extracts (not being shown among the figure).Shown in Figure 1B, use one second tungstenic reactant gases to carry out chemical vapor deposition process, to form second a tungstenic reactant gases atomic deposition layer with respect to this first reactant gases atomic deposition layer, wherein this second tungstenic reactant gases is WF
6, W (CO)
6, WCl
6Wait one of them, and then the residual gas that this second tungstenic reactant gases is done to use up extracts (not being shown among the figure).
Repeat above-mentioned this first reactant gases atomic deposition and this second tungstenic reactant gases atomic deposition step and during the course twice reactant gases residual gas of doing to use up extract step, repeat at least once, to form loop cycle, as shown in Figure 2, be one deck silicomethane atomic shell (SiH
4) 20 storehouse one deck tungsten hexafluoride atomic shell (WF
6) 22, repeat at least once, to form a loop cycle.
And we know, in tungsten atom layer deposition (ALD) replacement process, because have in the above-mentioned loop cycle of resulting from of impurity Siliciumatom, form structure as Fig. 1 D, so select in the present invention in partial periodicity, repeat to implement the chemical vapor deposition process step of the second tungstenic reactant gases and residual gas that this second tungstenic reactant gases is done to use up extracts step at least once, as shown in Figure 3, in former loop cycle, deposit one deck tungsten hexafluoride atomic shell (WF more
6) 22.Its atomic substitutions result is the tungsten metal deposition layer of Siliciumatom free from foreign meter as shown in Figure 4.
| Tungsten atom layer deposition (ALD) | Tungsten atom layer deposition (ALD) | Tungsten atom layer deposition (traditional C VD) | |
| First reactant gases | SiH 4 | B 2H 6 | SiH 4 |
| Wafer temperature | 300℃ | 300℃ | 425℃ |
| Pressure | ＜3T | ＜3T | 4.5T- |
| Impurity atoms | |||
| 10％Si | 25％B | 1％Si | |
| Crystal structure | Simple cubic | Amorphousness | Body-centered cubic |
| Gradient coating performance (0.2um, 6:1AR) | ＞95％ | ＞95％ | ＜60％ |
Table 1
By can knowing in the table 1, though be SiH with first reactant gases
4And B
2H
6The method of the tungsten atom layer deposition (ALD) that forms that act on is compared to being SiH with first reactant gases
4Tungsten atom layer deposition (traditional C VD), good gradient coating performance is arranged, lower wafer temperature, and lower pressure, but because it is SiH with first reactant gases
4And B
2H
6The crystalline texture of the tungsten atom layer deposition (ALD) that forms that act on is loose simple cubic and amorphousness, so when the tungsten atom layer deposits, can contain impurity atoms (10%Si and 25%B) easily, this result can have influence on the resistivity of tungsten metal level, and causes R.Value increases.
Utilize and select among the present invention in partial periodicity, the residual gas that repeats to implement the chemical vapor deposition process step of the second tungstenic reactant gases and this second tungstenic reactant gases is done to use up extracts step at least once, its result forms the tungsten atom settled layer of impure atom hardly just as shown in Figure 4.
Step wherein of the present invention also can be relative change, and improve effect with above-mentioned identical, it comprises the following steps: in a vacuum chamber, use one first tungstenic reactant gases to carry out chemical vapor deposition process, to form one first tungstenic reactant gases atomic deposition layer, wherein this first tungstenic reactant gases is WF
6, W (CO)
6, WCl
6Wait one of them, and then the residual gas that this first tungstenic reactant gases is done to use up extracts.Use one second reactant gases to carry out chemical vapor deposition process, to form second a reactant gases atomic deposition layer with respect to this first tungstenic reactant gases atomic deposition layer, wherein this second reactant gases is H
2, SiH
4, Si
2H
6, B
2H
6, PH
3Wait one of them, and then the residual gas that this second reactant gases is done to use up extracts.Repeat above-mentioned this first tungstenic reactant gases atomic deposition and this second reactant gases atomic deposition step and during the course twice reactant gases residual gas of doing to use up extract step, repeat at least once, to form loop cycle, select in partial periodicity, repeat to implement the chemical vapor deposition process step of the first tungstenic reactant gases and residual gas that this first tungstenic reactant gases is done to use up extracts step at least once.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting scope of the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that the claim scope defined.
Claims (2)
1. a tungsten metallization is learned the sedimentary method of atomic shell in the vapour deposition process, comprises the following steps:
(a) use one first reactant gases to carry out chemical vapor deposition process, to form one first reactant gases atomic deposition layer;
(b) residual gas that this first reactant gases is done to use up extracts;
(c) use one second tungstenic reactant gases to carry out chemical vapor deposition process, to form second a tungstenic reactant gases atomic deposition layer with respect to this first reactant gases atomic deposition layer;
(d) residual gas that this second tungstenic reactant gases is done to use up extracts;
(e) repeat above-mentioned (a) to (d) step at least once, form loop cycle;
(f) in above-mentioned loop cycle, select to repeat implementation step (c) and (d) at least once in partial periodicity;
Wherein this first reactant gases is H
2, Si
2H
6, B
2H
6, PH
3One of them;
Wherein this second tungstenic reactant gases is W (CO)
6, WCl
6One of them.
2. a tungsten metallization is learned the sedimentary method of atomic shell in the vapour deposition process, comprises the following steps:
(a) use one first tungstenic reactant gases to carry out chemical vapor deposition process, to form one first tungstenic reactant gases atomic deposition layer;
(b) residual gas that this first tungstenic reactant gases is done to use up extracts;
(c) use one second reactant gases to carry out chemical vapor deposition process, to form second a reactant gases atomic deposition layer with respect to this first tungstenic reactant gases atomic deposition layer;
(d) residual gas that this second reactant gases is done to use up extracts;
(e) repeat above-mentioned (a) to (d) step at least once, form loop cycle;
(f) in above-mentioned loop cycle, select to repeat implementation step (a) and (b) at least once in partial periodicity;
Wherein this second reactant gases is H
2, Si
2H
6, B
2H
6, PH
3One of them;
Wherein this first tungstenic reactant gases is W (CO)
6, WCl
6One of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02103508 CN1274877C (en) | 2002-02-05 | 2002-02-05 | Chemical Vapor deposition process of tungsten atom layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02103508 CN1274877C (en) | 2002-02-05 | 2002-02-05 | Chemical Vapor deposition process of tungsten atom layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1436876A CN1436876A (en) | 2003-08-20 |
| CN1274877C true CN1274877C (en) | 2006-09-13 |
Family
ID=27627847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02103508 Expired - Lifetime CN1274877C (en) | 2002-02-05 | 2002-02-05 | Chemical Vapor deposition process of tungsten atom layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1274877C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8647723B2 (en) * | 2010-10-22 | 2014-02-11 | GM Global Technology Operations LLC | Nucleation of ultrathin, continuous, conformal metal films using atomic layer deposition and application as fuel cell catalysts |
| JP5959991B2 (en) * | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | Method for forming tungsten film |
| CN103898474B (en) * | 2012-12-27 | 2016-02-17 | 中国科学院上海微系统与信息技术研究所 | Tungsten-antimony-tellurium phase change material deposition method and phase-change memory cell preparation method |
| CN104766792A (en) * | 2014-01-03 | 2015-07-08 | 中国科学院微电子研究所 | Tungsten layer deposition method with improved adhesion and filling properties |
| KR102513403B1 (en) * | 2018-07-30 | 2023-03-24 | 주식회사 원익아이피에스 | Methods of depositing tungsten |
| CN115011947A (en) * | 2022-06-30 | 2022-09-06 | 厦门韫茂科技有限公司 | Tungsten-deposited diamond powder and composite copper powder material and preparation method thereof |
-
2002
- 2002-02-05 CN CN 02103508 patent/CN1274877C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1436876A (en) | 2003-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Aaltonen et al. | Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature | |
| JP6998945B2 (en) | Dope selective metal cap to improve copper electromigration with ruthenium liner | |
| US7799674B2 (en) | Ruthenium alloy film for copper interconnects | |
| CN102146553B (en) | Method of depositing metal film on substrate with patterned features | |
| US8058170B2 (en) | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics | |
| US20200347493A1 (en) | Reverse Selective Deposition | |
| JP6200487B2 (en) | Method for forming a TiSiN thin layer by using atomic layer deposition | |
| JPH0649942B2 (en) | Chemical vapor deposition method of copper metal film, selective etching method and synthesis method of Cu + 1 (β-diketonate) -olefin composite | |
| JPH11238698A (en) | Formation of metallic layer using atomic layer evaporation process | |
| CN1443366A (en) | Formation of boride barrier layers using chemisorption techniques | |
| CN105839068A (en) | Tungsten film forming method | |
| CN1219760A (en) | Apparatus and method for manufacturing semiconductor device | |
| CN1274877C (en) | Chemical Vapor deposition process of tungsten atom layer | |
| TW200538573A (en) | A method for processing a substrate | |
| CN101036230A (en) | Treatment of silicon prior to nickel silicide formation | |
| TW201920735A (en) | Seed layers for copper interconnects | |
| CN1115723C (en) | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method using the same | |
| JP3194256B2 (en) | Film growth method and film growth apparatus | |
| CN109994424A (en) | Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node | |
| JP2002356775A (en) | Method of achieving high adhesion property of thin cvd copper film on tan substrate | |
| Peng et al. | Structural and electrical properties of chemical vapor deposition tungsten overgrowth on physical vapor deposited and metalorganic chemical vapor deposited TiN adhesion layers | |
| CN113481484B (en) | Preparation method of cobalt-germanium alloy film with temperature coefficient of resistance tending to zero | |
| KR100609049B1 (en) | Method for forming metal interconnection of semiconductor device | |
| CN1222014C (en) | Method of forming TiN barrier by chemical rapour phase deposition | |
| CN1072391C (en) | Method for selectively chemical vapour deposition for forming aluminium plug |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20060913 |
|
| CX01 | Expiry of patent term |