CN109994424A - Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node - Google Patents
Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node Download PDFInfo
- Publication number
- CN109994424A CN109994424A CN201910231239.2A CN201910231239A CN109994424A CN 109994424 A CN109994424 A CN 109994424A CN 201910231239 A CN201910231239 A CN 201910231239A CN 109994424 A CN109994424 A CN 109994424A
- Authority
- CN
- China
- Prior art keywords
- titanium nitride
- thickness
- contact hole
- hole structure
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a kind of forming methods of titanium nitride film in contact hole structure for 28 nanometers and following technology node, comprising: the first time that titanium nitride is carried out on the substrate of contact hole opening deposit and carry out first time processing, formation titanium nitride initiation layer；Second that titanium nitride is carried out on titanium nitride initiation layer deposits and carries out second of processing, form titanium nitride body layer, the thickness of titanium nitride initiation layer is smaller than the thickness of titanium nitride body layer, and the sum of thickness of titanium nitride initiation layer and titanium nitride body layer is identical as titanium nitride film thickness needed for contact hole structure.The time that the present invention changes the thickness of titanium nitride deposit twice and handled deposit titanium nitride, the titanium nitride film for forming the titanium nitride film formed for the first time than second is thin, first time corona treatment load can be mitigated, the exhaust in treatment process is reduced, film quality resistance value meets the requirements, filling capacity enhancing, form a film the good barrier layer of continuity to obtain.
Description
Technical field
The invention belongs to microelectronics and semiconductor integrated circuit manufacturing fields, and in particular to conduct in a kind of contact hole structure
The forming method of the titanium nitride film on barrier layer is primarily adapted for use in 28 nanometers and following technology node.
Background technique
As the production of integrated circuit develops to super large-scale integration (ULSI), IC design and manufacture are most
Low line width persistently reduces, and internal current densities are increasing, and contained number of elements is continuously increased, so that the surface of chip can not
Enough areas are provided to make required interconnection line.Therefore, the increased interconnection line demand of institute after being reduced for co-operating member, two
Layer or more the design of multiple layer metal interconnection line become the method that must be used for very large scale integration technology.
Currently, the conducting between different metal layer is to dig one by the insulating layer between two metal layers to be open and insert
Conductive material forms contact hole (Contact Hole, the abbreviation CT) structure of two metal layers of conducting and realizes.Contact hole technique
The each electrode for the various devices being located on silicon wafer is led on dielectric layer, is interconnected using multiple layer metal by the electricity of integrated circuit
Pole is drawn, and is packaged in order to subsequent.The formation quality of above-mentioned contact hole structure is very big for the performance influence of circuit, if
The formation of contact hole is second-rate, will lead to the rising of circuit overall resistance, device is by cisco unity malfunction when serious.
The forming process of contact hole structure mainly comprises the steps that
1) thick interlayer dielectric (not shown) is deposited on a semiconductor substrate, and is gone using photoetching, lithographic technique
Except the interlayer dielectric at corresponding contact hole is to exposing substrate surface, to form contact hole opening, the contact hole opening across
Interlayer dielectric；
2) bottom surface and side formation adherency being open using physical vapor deposition (PVD) method in the contact hole
Layer, the adhesion layer are titanium (Ti) layer, adhesion layer Ti can while deposition in situ (in suit) and contact hole bottom pasc reaction
Form the TiSi of low-resistanceXContact layer forms good electrical contact in contact hole bottom；
3) barrier layer is formed on titanium layer surface, which is titanium nitride (TiN) layer；
4) tungsten is filled in contact hole using chemical vapor deposition (CVD) method, and etch and form tungsten plug, completion pair
The filling of contact hole.
In the filling process of contact hole structure, other than filling tungsten forms tungsten plug, it is also necessary to adhesion layer Ti be added
With barrier layer TiN.Wherein, the preferable adherency between silicon, silica not only may be implemented in adhesion layer, and can be in contact hole
The TiSi of bottom formation low-resistanceX, substantially reduce the contact resistance of contact hole；Barrier layer on the one hand can then increase tungsten with
The adhesiveness of contact hole, improves the formation quality of tungsten plug, reactant WF used when on the other hand can also prevent deposits tungsten6With
The silicon of contact hole bottom reacts, and forms the WSi of high resistantX, so that contact hole resistance value increases.
Currently, in ic chip package process, the formation of titanium nitride film in ILB (Inner Layer Barrier)
Process generallys use the mode of two-step growth, and the film layer of two-step growth deposit same thickness and to handle the time also identical,
Such as 40 nanometer nodes(every secondary growth obtainsFilm layer), 28 nanometer nodes(every secondary growth obtainsFilm
Layer).
Specifically, by taking 28 nanometer nodes as an example, 36 nanometers of the opening critical size of contact hole usually requires that ILB titanium nitride
Film thickness existsMore stringent requirements are proposed for this filling capacity to ILB, should meet good porefilling capability, together
When reach lower resistivity again.In ILB titanium nitride deposit using MOCVD (i.e. Metalorganic chemical vapor deposition method,
Metal-organic Chemical Vapor Deposition) processing procedure, reaction source TDMAT (four dimethylamino titaniums) exists
It is decomposed under certain temperature and pressure and generates titanium nitride, the titanium nitride film formed at this time contains carbon oxygen (C/O) impurity, resistance value (RS)
It is very high, it is unable to satisfy subsequent integrated demand.In order to solve the problems, such as that aforementioned titanium nitride film exists, currently used method be
In-situ plasma treatment (In-situ plasma treatment) is added after being formed in titanium nitride film, to remove carbon oxygen C/O
Impurity obtains the titanium nitride film of low-resistance and densification.Usual plasma treatment time is 10S, BKM (Best Knowledge
Method, i.e. manufacturer pass through the preferred plan that multinomial test provides) suggest 20S.
With ILB titanium nitride film thickness requirement in 28 nm technology nodesFor, it is currently used to beTitanium nitride
The forming method flow chart of film as shown in Fig. 2, detailed process as shown in Figure 1, being carried out on the substrate 1 of contact hole opening first
Then the deposit of first time titanium nitride carries out corona treatment to the titanium nitride of first time deposit, obtainsThe first titanium nitride
Film 2 then carries out second of titanium nitride deposit, finally carries out corona treatment to the titanium nitride of second of deposit, obtains
The second titanium nitride film 3, the first titanium nitride film 2 and the second titanium nitride film 3 form last required thicknessTitanium nitride film.Though
Right plasma treatment procedure can take away carbon oxygen C/O impurity, but also have side effect simultaneously, that is, generate exhaust (out
), gassing it will affect the filling of second of titanium nitride deposit in this way.
The selection faced in 28 nm technology nodes is to need better titanium nitride film quality or better filling capacity.Mesh
Preceding selection is to sacrifice film quality, to obtain better filling capacity.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of for 28 nanometers and the contact hole structure of following technology node
The forming method of middle titanium nitride film, can solve in 28 nanometers and technology node below can not combine nitrogen in ILB processing procedure
The problem of changing titanium film matter and filling capacity.
In order to solve the above technical problems, provided by the present invention in the contact hole structure of 28 nanometers and following technology node
The forming method of titanium nitride film, includes the following steps:
Step 1, the first time that titanium nitride is carried out on the substrate of contact hole opening deposits and carries out first time processing, shape
At the titanium nitride initiation layer with a thickness of H1；
Step 2, second that titanium nitride is carried out on titanium nitride initiation layer deposits and carries out second of processing, forms thickness
Thickness H1 for the titanium nitride body layer of H2, the titanium nitride initiation layer is smaller than the thickness H2 of titanium nitride body layer, and titanium nitride
The sum of the thickness of initiation layer and titanium nitride body layer is identical as titanium nitride film thickness H needed for contact hole structure.
Wherein, in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isIts
The thickness of middle titanium nitride initiation layerThe thickness of titanium nitride body layerAnd
One of which, in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isWherein
The thickness H1 of titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
Preferably, the thickness H1 of titanium nitride initiation layer isThe thickness H2 of titanium nitride body layer is
Further, the time handled the titanium nitride of first time deposit is 10S~15S, to second of deposit
The time that titanium nitride is handled is 20S~30S.
Wherein another, in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isIts
The thickness H1 of middle titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
Wherein another, in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isIts
The thickness H1 of middle titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
In the above-mentioned methods, the titanium nitride in step 1 and step 2 is raw using mocvd process
It is long.
In the above-mentioned methods, the method handled in step 1 and step 2 titanium nitride of deposit is using nitrogen and hydrogen
Gas removes carbon oxygen impurities under action of plasma.
Preferably, the titanium nitride deposition thickness before handling in step 1 is 2H1, the titanium nitride before handling in step 2 deposits thick
Degree is 2H2.
Compared with existing titanium nitride film forming method, although the present invention is changed twice using two one-step film forming methods
The thickness of titanium nitride deposit and the time that deposit titanium nitride is handled, so that the titanium nitride film formed for the first time is than second
The titanium nitride film of secondary formation is thin, has the advantage that in this way
First, relatively thin titanium nitride initiation layer is formed after first time deposition process, can mitigate first time plasma in this way
Body handles load, so that the lower titanium nitride film of resistance value is obtained, meanwhile, film layer is thinning, wherein the carbon oxygen impurities total amount contained
It reduces, the exhaust generated in the treatment process of same time in this way is reduced, to keep film layer finer and close continuous；
Second, due to the control in the initial layer formation process of titanium nitride to exhaust, make it possible to continuously give birth in the contact hole
Long titanium nitride body layer, finally acquisition film quality resistance value meets the requirements in contact hole structure, filling capacity enhancing, form a film continuity
Good barrier layer.
Detailed description of the invention
Fig. 1 is the forming process schematic diagram of titanium nitride film in ILB processing procedure in existing 28 nm technology node；
Fig. 2 is the method flow diagram of titanium nitride film in ILB processing procedure in existing 28 nm technology node；
Fig. 3 is the method flow diagram of titanium nitride film in ILB processing procedure in 28 nm technology nodes of the invention；
Fig. 4 is the forming process schematic diagram of titanium nitride film in ILB processing procedure in 28 nm technology nodes of the invention；
Fig. 5 is the schematic diagram for the contact hole structure that the present invention is formed.
Specific embodiment
The forming method of titanium nitride film in the contact hole structure for 28 nanometers and following technology node of the invention, including
Following steps:
Step 1, the first time that titanium nitride is carried out on the substrate of contact hole opening deposits and carries out first time processing, shape
At the titanium nitride initiation layer with a thickness of H1；
Preferably, titanium nitride is grown using metal-organic chemical vapor deposition equipment (MOCVD) technique, reuses nitrogen and hydrogen
Gas is handled the titanium nitride of deposit under action of plasma, to remove carbon oxygen impurities；
Step 2, second that titanium nitride is carried out on titanium nitride initiation layer deposits and carries out second of processing, forms thickness
Thickness H1 for the titanium nitride body layer of H2, the titanium nitride initiation layer is smaller than the thickness H2 of titanium nitride body layer, and titanium nitride
The sum of the thickness of initiation layer and titanium nitride body layer is identical as titanium nitride film thickness H needed for contact hole structure；
Preferably, titanium nitride is grown using metal-organic chemical vapor deposition equipment (MOCVD) technique, reuses nitrogen and hydrogen
Gas is handled the titanium nitride of deposit under action of plasma, to remove carbon oxygen impurities.
Preferably, the titanium nitride deposition thickness before handling in step 1 is 2H1, the titanium nitride before handling in step 2 deposits thick
Degree is 2H2.
Below by way of particular specific embodiment and embodiments of the present invention are described with reference to the drawings, those skilled in the art
Further advantage and effect of the invention can be understood easily by content disclosed in the present specification.The present invention also can be by other
Different specific embodiments is implemented or is applied, and details in this specification can also be based on different perspectives and applications,
Without departing substantially from carrying out various modifier changes under spirit of the invention.
First embodiment
In the contact hole structure of 28 nm technology nodes, titanium nitride film (barrier layer) the thickness H finally needed to form isThe wherein thickness of titanium nitride initiation layerThe thickness of titanium nitride body layerAnd
The maximum capacity that the thickness of titanium nitride initiation layer needs to comprehensively consider second of titanium nitride deposition process (is generally up to about
It can depositTitanium nitride, plasma treated formationFilm layer) and the titanium nitride initiation layer itself sky
Hole defect, if titanium nitride initiation layer is excessively thin, it will cause contact hole parts not to have titanium nitride film at all.
Second embodiment
In the contact hole structure of 28 nm technology nodes, titanium nitride film (barrier layer) the thickness H finally needed to form isThe method for forming the titanium nitride film, as shown in figure 4, including the following steps:
The first step, the first time that titanium nitride is carried out on the substrate 1 of contact hole opening deposit and carry out first time processing,
Forming thickness H1 isTitanium nitride initiation layer 2'；
Second step, second that titanium nitride is carried out on titanium nitride initiation layer 2' deposit and carry out second of processing, formed
The titanium nitride body layer 3' of thickness H2=H-H1.
3rd embodiment
In the contact hole structure of 28 nm technology nodes, the method for forming the titanium nitride film, as shown in figure 3, including such as
Lower step:
The first step, the first time that titanium nitride is carried out on the substrate 1 of contact hole opening deposit and carry out first time processing,
Forming thickness H1 isTitanium nitride initiation layer 2'；
The method handled the titanium nitride of deposit is gone down in action of plasma except film layer using nitrogen and hydrogen
In carbon oxygen impurities；
Second step, second that titanium nitride is carried out on titanium nitride initiation layer 2' deposit and carry out second of processing, formed
Thickness H2 isTitanium nitride body layer 3'.
Further, the time handled the titanium nitride of first time deposit is 10S~15S, the in this way row of can control
The yield of gas significantly improves filling capacity when titanium nitride deposit, to the titanium nitride of second deposit handled when
Between be 20S~30S.
Fourth embodiment
In the contact hole structure of 28 nm technology nodes, titanium nitride film (barrier layer) the thickness H finally needed to form isThe method for forming the titanium nitride film, includes the following steps:
The first step, the first time that titanium nitride is carried out on the substrate of contact hole opening deposit and carry out first time processing,
Forming thickness H1 isTitanium nitride initiation layer；
Second step, second that titanium nitride is carried out on titanium nitride initiation layer deposit and carry out second of processing, are formed thick
Spend the titanium nitride body layer of H2=H-H1.
5th embodiment
In the contact hole structure of 28 nm technology nodes, titanium nitride film (barrier layer) the thickness H finally needed to form isThe method for forming the titanium nitride film, includes the following steps:
The first step, the first time that titanium nitride is carried out on the substrate of contact hole opening deposit and carry out first time processing,
Forming thickness H1 isTitanium nitride initiation layer；
Second step, second that titanium nitride is carried out on titanium nitride initiation layer deposit and carry out second of processing, are formed thick
Spend the titanium nitride body layer of H2=H-H1.
In several of the above embodiments where, after titanium nitride film is formed, tungsten seed crystal is formed using atomic layer deposition (ALD) technique
Layer, then main body tungsten layer is formed in tungsten seed crystal surface using chemical vapor deposition (CVD) technique and fills out contact hole opening completely
It fills to form contact hole structure, as shown in Figure 5.
Although above-described embodiment is illustrated by taking 28 nm technology nodes as an example, method of the invention can be promoted applicable
In Yu Geng little technology node, such as 14 nanometers, 10 nanometers, 7 nanometers, certainly, as contact pore size becomes smaller, titanium nitride thickness is wanted
Ask also thinning, the requirement to porefilling capability is got higher, and those skilled in the art can combine production technology in the method in accordance with the invention
In specific processing capacity be arranged two secondary growths titanium nitride film thickness.
Compared with existing titanium nitride film forming method, although the present invention is changed twice using two one-step film forming methods
The thickness of titanium nitride deposit and the time that deposit titanium nitride is handled, so that the titanium nitride film formed for the first time is than second
The titanium nitride film of secondary formation is thin, has the advantage that in this way
First, relatively thin titanium nitride initiation layer is formed after first time deposition process, can mitigate first time plasma in this way
Body handles load, so that the lower titanium nitride film of resistance value is obtained, meanwhile, film layer is thinning, wherein the carbon oxygen impurities total amount contained
It reduces, the exhaust generated in the treatment process of same time in this way is reduced, to keep film layer finer and close continuous；
Second, due to the control in the initial layer formation process of titanium nitride to exhaust, make it possible to continuously give birth in the contact hole
Long titanium nitride body layer, finally acquisition film quality resistance value meets the requirements in contact hole structure, filling capacity enhancing, form a film continuity
Good barrier layer.
The present invention has been described in detail through specific embodiments, which is only of the invention preferable
Embodiment, the invention is not limited to above embodiment.Without departing from the principles of the present invention, those skilled in the art
The equivalent replacement and improvement that member makes, are regarded as in the technology scope that the present invention is protected.
Claims (10)
1. the forming method of titanium nitride film, feature exist in a kind of contact hole structure for 28 nanometers and following technology node
In including the following steps:
Step 1, the first time that titanium nitride is carried out on the substrate of contact hole opening deposits and carries out first time processing, is formed thick
Degree is the titanium nitride initiation layer of H1；
Step 2, second that titanium nitride is carried out on titanium nitride initiation layer deposits and carries out second of processing, is formed with a thickness of H2
Titanium nitride body layer, the thickness H1 of the titanium nitride initiation layer is smaller than the thickness H2 of titanium nitride body layer, and titanium nitride is initial
The sum of the thickness of layer and titanium nitride body layer is identical as titanium nitride film thickness H needed for contact hole structure.
2. the formation according to claim 1 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H is
The wherein thickness of titanium nitride initiation layerThe thickness of titanium nitride body layerAnd
3. the formation according to claim 2 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isWherein
The thickness H1 of titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
4. the formation according to claim 3 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that the thickness H1 of titanium nitride initiation layer isThe thickness H2 of titanium nitride body layer is
5. the formation according to claim 4 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that the time handled the titanium nitride of first time deposit is 10S~15S, to the nitrogen of second of deposit
Changing the time that titanium is handled is 20S~30S.
6. the formation according to claim 2 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isWherein
The thickness H1 of titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
7. the formation according to claim 2 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that in the contact hole structure of 28 nm technology nodes, required titanium nitride film thickness H isWherein
The thickness H1 of titanium nitride initiation layer isThe thickness H2=H-H1 of titanium nitride body layer.
8. the formation according to claim 1 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that the titanium nitride in step 1 and step 2 is grown using mocvd process.
9. the formation according to claim 1 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
Method, which is characterized in that the method handled in step 1 and step 2 titanium nitride of deposit is existed using nitrogen and hydrogen
Carbon oxygen impurities are removed under action of plasma.
10. the shape according to claim 1 for being used for titanium nitride film in the contact hole structure of 28 nanometers and following technology node
At method, which is characterized in that the titanium nitride deposition thickness before handling in step 1 is 2H1, and the titanium nitride before handling in step 2 forms sediment
Product is with a thickness of 2H2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910231239.2A CN109994424B (en) | 2019-03-26 | 2019-03-26 | Method for forming titanium nitride film in contact hole structure for 28 nm and below technology node |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910231239.2A CN109994424B (en) | 2019-03-26 | 2019-03-26 | Method for forming titanium nitride film in contact hole structure for 28 nm and below technology node |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109994424A true CN109994424A (en) | 2019-07-09 |
| CN109994424B CN109994424B (en) | 2021-10-15 |
Family
ID=67131518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910231239.2A Active CN109994424B (en) | 2019-03-26 | 2019-03-26 | Method for forming titanium nitride film in contact hole structure for 28 nm and below technology node |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109994424B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752150A (en) * | 2019-10-25 | 2020-02-04 | 上海华力集成电路制造有限公司 | Method for improving defect of metal hard mask titanium nitride particles |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431049A (en) * | 2007-05-03 | 2009-05-13 | 三星电子株式会社 | Methods of forming a semiconductor device including a diffusion barrier film |
| CN101593723A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Through hole formation method |
| CN104299940A (en) * | 2013-07-19 | 2015-01-21 | 上海华虹宏力半导体制造有限公司 | Film forming method for metal blocking layer |
| US20190067092A1 (en) * | 2017-08-31 | 2019-02-28 | International Business Machines Corporation | Modulating metal interconnect surface topography |
-
2019
- 2019-03-26 CN CN201910231239.2A patent/CN109994424B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431049A (en) * | 2007-05-03 | 2009-05-13 | 三星电子株式会社 | Methods of forming a semiconductor device including a diffusion barrier film |
| CN101593723A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Through hole formation method |
| CN104299940A (en) * | 2013-07-19 | 2015-01-21 | 上海华虹宏力半导体制造有限公司 | Film forming method for metal blocking layer |
| US20190067092A1 (en) * | 2017-08-31 | 2019-02-28 | International Business Machines Corporation | Modulating metal interconnect surface topography |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752150A (en) * | 2019-10-25 | 2020-02-04 | 上海华力集成电路制造有限公司 | Method for improving defect of metal hard mask titanium nitride particles |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109994424B (en) | 2021-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220328318A1 (en) | Deposition method | |
| US7300869B2 (en) | Integrated barrier and seed layer for copper interconnect technology | |
| US20090081863A1 (en) | Method of forming metal wiring layer of semiconductor device | |
| US10002834B2 (en) | Method and apparatus for protecting metal interconnect from halogen based precursors | |
| US20150200164A1 (en) | Semiconductor Devices and Methods of Manufacture Thereof | |
| US20080237860A1 (en) | Interconnect structures containing a ruthenium barrier film and method of forming | |
| CN107887325A (en) | The forming method of semiconductor structure | |
| US20200321247A1 (en) | Methods for forming cobalt and ruthenium capping layers for interconnect structures | |
| US7375024B2 (en) | Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature | |
| CN109994424A (en) | Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node | |
| US8008774B2 (en) | Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same | |
| US20190348369A1 (en) | Method and apparatus for protecting metal interconnect from halogen based precursors | |
| CN115910917B (en) | Metal tungsten film and preparation method thereof | |
| US7199019B2 (en) | Method for forming tungsten contact plug | |
| TW200522264A (en) | Method for forming metal wiring in semiconductor device | |
| JP2019062190A (en) | Seed layers for copper interconnects | |
| TWI564422B (en) | Chemical vapor deposition (cvd) of ruthenium films and applications for same | |
| CN208706642U (en) | Semiconductor interconnection structure | |
| JP2011014667A (en) | Semiconductor device and method of manufacturing the same | |
| JP2002356775A (en) | Method of achieving high adhesion property of thin cvd copper film on tan substrate | |
| US20240014071A1 (en) | Cmos-compatible graphene structures, interconnects and fabrication methods | |
| US20220216060A1 (en) | Conformal and smooth titanium nitride layers and methods of forming the same | |
| US20230317458A1 (en) | Gap fill enhancement with thermal etch | |
| US20230290679A1 (en) | Tungsten molybdenum structures | |
| US11482413B2 (en) | Conformal and smooth titanium nitride layers and methods of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |