CN1274029C - 一种组合栅场效应晶体管 - Google Patents
一种组合栅场效应晶体管 Download PDFInfo
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- CN1274029C CN1274029C CN 03105085 CN03105085A CN1274029C CN 1274029 C CN1274029 C CN 1274029C CN 03105085 CN03105085 CN 03105085 CN 03105085 A CN03105085 A CN 03105085A CN 1274029 C CN1274029 C CN 1274029C
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
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Priority Applications (1)
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CN 03105085 CN1274029C (zh) | 2003-03-06 | 2003-03-06 | 一种组合栅场效应晶体管 |
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CN 03105085 CN1274029C (zh) | 2003-03-06 | 2003-03-06 | 一种组合栅场效应晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN1527398A CN1527398A (zh) | 2004-09-08 |
CN1274029C true CN1274029C (zh) | 2006-09-06 |
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CN 03105085 Expired - Lifetime CN1274029C (zh) | 2003-03-06 | 2003-03-06 | 一种组合栅场效应晶体管 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298894A (zh) * | 2015-06-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7522405B2 (en) * | 2005-05-23 | 2009-04-21 | Perfect Switch, Llc | High current electrical switch and method |
CN100468780C (zh) * | 2006-06-09 | 2009-03-11 | 北京大学 | 一种nrom闪存单元的制备方法 |
US20110147837A1 (en) * | 2009-12-23 | 2011-06-23 | Hafez Walid M | Dual work function gate structures |
CN102420226B (zh) * | 2011-06-15 | 2013-08-07 | 上海华力微电子有限公司 | 一种抑制漏极感应势垒降低效应的cmos器件及其制备方法 |
CN102420227B (zh) * | 2011-06-15 | 2014-07-09 | 上海华力微电子有限公司 | 一种抑制漏极感应势垒降低效应的后栅极工艺cmos器件及其制备方法 |
CN102543879B (zh) * | 2011-09-08 | 2014-04-02 | 上海华力微电子有限公司 | 一种后栅极单晶体管动态随机存储器的制作方法 |
CN103094349A (zh) * | 2013-01-31 | 2013-05-08 | 南京邮电大学 | 带有欠栅的三种材料异质栅碳纳米管场效应管 |
CN103247688B (zh) * | 2013-04-22 | 2016-08-17 | 南京邮电大学 | 一种双材料栅线性掺杂的石墨烯场效应管 |
CN103258858A (zh) * | 2013-04-22 | 2013-08-21 | 南京邮电大学 | 一种三材料异质栅结构的石墨烯纳米条带场效应管 |
CN103474455B (zh) * | 2013-08-21 | 2017-04-19 | 电子科技大学 | 一种具有复合金属栅的氮化镓基高电子迁移率晶体管 |
CN106158645A (zh) * | 2015-04-10 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
CN113517338B (zh) * | 2020-04-10 | 2023-09-15 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
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2003
- 2003-03-06 CN CN 03105085 patent/CN1274029C/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298894A (zh) * | 2015-06-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
CN106298894B (zh) * | 2015-06-29 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
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Publication number | Publication date |
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CN1527398A (zh) | 2004-09-08 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20101129 Owner name: BEIJING UNIV. |
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Free format text: CORRECT: ADDRESS; FROM: 100871 BEIJING UNIVERSITY, NO.5, SUMMER PALACE ROAD, HAIDIAN DISTRICT, BEIJING TO: 201203 NO.18, ZHANGJIANG ROAD, PUDONG NEW DISTRICT, SHANGHAI |
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Effective date of registration: 20101129 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Peking University Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 100871 Haidian District the Summer Palace Road,, No. 5, Peking University Patentee before: Peking University |
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Granted publication date: 20060906 |