CN1269186C - Carbon doped silicon sheet with internal impurity absorbing function and production thereof - Google Patents
Carbon doped silicon sheet with internal impurity absorbing function and production thereof Download PDFInfo
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- CN1269186C CN1269186C CN 200410084529 CN200410084529A CN1269186C CN 1269186 C CN1269186 C CN 1269186C CN 200410084529 CN200410084529 CN 200410084529 CN 200410084529 A CN200410084529 A CN 200410084529A CN 1269186 C CN1269186 C CN 1269186C
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- carbon
- silicon sheet
- doped silicon
- concentration
- carbon doped
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000012535 impurity Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 3
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 231100000614 poison Toxicity 0.000 abstract description 4
- 230000007096 poisonous effect Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 description 16
- 238000005247 gettering Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 10
- 230000009885 systemic effect Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001727 in vivo Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
The present invention relates to a carbon doped silicon sheet with an internal impurity absorbing function. The oxygen concentration is from 5 to 15*10<17>cm<-3>, and the carbon concentration is from 5 to 30*10<16>cm<-3>. The procedures are as following: step 1, a straight pulling method is used for growing crystals, the carbon doped silicon sheet with the oxygen concentration from 5 to 15*10<17>cm<-3> and the carbon concentration from 5 to 30*10<16>cm<-3> is obtained by controlling technical parameters in the growing process of the crystals; step 2, the carbon doped silicon sheet with the oxygen concentration from 5 to 15*10<17>cm<-3> and the carbon concentration from 5 to 30*10<16>cm<-3> is firstly provided with heat insulation under the temperature from 1100 DEG C to 1250 DEG C for 1 to 3 hours, secondly provided with heat insulation under the temperature from 600 DEG C to 900 DEG C for 4 to 50 hours and finally provided with heat insulation under the temperature from 1000 DEG C to 1200 DEG C for 4 to 30 hours in a furnace for heat treatment under the protection of argon gas or nitrogen gas. The invented straight pulling silicon sheet has high internal impurity absorbing ability, and has an excellent impurity absorbing effect on poisonous metal. When the silicon sheet is used for an integrated circuit, the finished product rate of the integrated circuit can be increased.
Description
Technical field
The present invention relates to a kind of preparation method, belong to semiconductor applications with carbon doped silicon sheet of internal impurity absorbing function.
Background technology
Commitment in silicon crystal research and production, the researcher finds that the carbon of crystal middle and high concentration can seriously destroy the performance of devices such as diode, transistor, carbon can not only influence the oxygen precipitation in the silicon chip even separate out SiC, reduce the silicon chip quality, and can cause the puncture voltage of device to reduce greatly, leakage current increases, thereby device quality is had a negative impact.Therefore, a lot of researchers think the introducing that should avoid carbon impurity in crystal growing process as possible.Through effort for many years, to use in the czochralski silicon monocrystal at present high-purity zone-melted silicon single crystal and integrated circuit, the concentration of carbon generally all is controlled in 2.5～5 * 10
15Cm
-3Below, promptly below the detection limit of infrared spectrometer.Therefore, the silicon single crystal of high-carbon and silicon chip thereof are not used as the integrated circuit silicon materials.
Continuous development along with semiconductor device art, integrated circuit technique is no longer imitateed the whole high-purity flawless silicon single crystal of use of early stage device technology requirement, and only require and the high-purity area free from defect that forms 2～5 μ m at the nearly superficial layer of silicon chip be called clear area or clean area.Reach such purpose, adopt the technology of outer gettering or intrinsic gettering usually.
At present, adopting the crystal of Czochralski method (Czochralski method) growth, generally is that technological parameters such as the air pressure of velocity of rotation, growth furnace gas of velocity of rotation, the crucible of pull rate, crystal ingot by crystal ingot in the control crystal growing process and gas componant are realized the accurate control to oxygen content, carbon content in the silicon chip.And integrated circuit nearly all is to utilize the basic reason of Czochralski silicon wafer manufacturing to be owing to contain 10 in the Czochralski silicon wafer
18Cm
-3The oxygen impurities of the order of magnitude, the mechanical strength that it can strengthen Czochralski silicon wafer on the one hand reduces owing to the warpage that causes in the device technology thermal cycle, thereby does not influence the alignment precision of photoetching process; Can in wafer bulk, precipitate and form secondary defect (BMD) by suitable heat treatment process oxygen impurities on the other hand, and at the nearly surf zone of silicon chip because the outdiffusion of oxygen forms area free from defect, Here it is so-called systemic impurity process.
Defect area can be absorbed the inevitable metal contamination of device fabrication in the body that the silicon chip systemic impurity process forms, and the clean area on the nearly surface of silicon chip can be used as the active area of integrated circuit, thereby systemic impurity process has great importance to the raising of integrated circuit rate in blocks.The intrinsic gettering phenomenon of Czochralski silicon wafer was at reported first (Rozgonyi, G.A., et al., J.Electrochem.Soc.123 in 1976,1910 (1976)), and the intrinsic gettering notion proposed (Tan, T.Y. in 1977, et al., Appl.Phys.Lett.30,175 (1977)).After this through in a few years standard systemic impurity process (Nagasawa, et al., Appl.Phys.Lett.37,622 (1980) of having researched and proposed so-called " height-low-Gao " three-step annealing; Peibt, H., et al., Phys.Stat.Sol., A 68,253 (1981); Peibt, H., et al., Phys.Stat.Sol., A 68,253 (1981)).That is: the first step is annealed being higher than under 1100 ℃ the temperature, and the oxygen impurities outdiffusion that makes the nearly surf zone of silicon chip is to form clean area, and this step carries out under inert atmosphere usually; Second step is in 600～750 ℃ of annealing down of low temperature, to form the core of oxygen precipitation in wafer bulk; The 3rd step 1000～1100 ℃ of middle high temperature down annealing make the oxygen precipitation core that in second step annealing, forms grow up and form secondary defect.Thereby, forming flawless clean area on the nearly surface of silicon chip, formation has highdensity microdefect (oxygen precipitation and secondary defect) in vivo.The power of the ability of intrinsic gettering can be represented with the width of clean area and the density of oxygen precipitation.
Microdefect density in the existing progress in Czochralski silicon lamellar body is lower, and the gettering effect of poisonous metal is awaited further to improve.
Summary of the invention
The objective of the invention is to propose a kind of new ideas of utilizing the high-carbon silicon single crystal, the preparation method of the carbon doped silicon sheet with higher internal impurity absorbing function is provided.
Preparation method with carbon doped silicon sheet of internal impurity absorbing function of the present invention, its step is as follows:
1) adopt the Grown by CZ Method crystal, obtaining oxygen concentration by technological parameter in the control crystal growing process is 5～15 * 10
17Cm
-3, concentration of carbon is 5～30 * 10
16Cm
-3Carbon doped silicon sheet;
2) be 5～15 * 10 with oxygen concentration
17Cm
-3, concentration of carbon is 5～30 * 10
16Cm
-3Carbon doped silicon sheet in heat-treatment furnace, under argon gas or protection of nitrogen gas, earlier 1100～1250 ℃ of insulations 1～3 hour, then 600～900 ℃ of insulations 4～50 hours, again 1000～1200 ℃ of insulations 4～30 hours.
Contain higher concentration of carbon in the Czochralski silicon wafer of invention, because carbon can promote oxygen precipitation, after the systemic impurity process processing, have the flawless clean area of certain width in the formation of nearly surface in the silicon chip, and proper interior microdefect (oxygen precipitation and secondary defect) density is significantly improved, therefore, has higher intrinsic gettering ability, poisonous metal is had better gettering effect, and this silicon chip is applied to integrated circuit, can improve the rate of finished products of integrated circuit.
Description of drawings
After Fig. 1 is the intrinsic gettering heat treatment of three steps, the cleavage surface defect distribution microphoto of ordinary straight pulled silicon wafer (CZ-Si) and carbon dope Czochralski silicon wafer (HCCZ-Si), wherein, figure (a) is that CZ-Si amplifies 200 times microphoto, figure (b) is that HCCZ-Si amplifies 200 times microphoto, figure (c) is that CZ-Si amplifies 1000 times microphoto, and figure (d) is that HCCZ-Si amplifies 1000 times microphoto.
Embodiment
Embodiment 1
Choose 3 inches carbon dope Czochralski silicon wafers (HCCZ-Si) of argon shield growth, concentration of carbon is 1 * 10
17Cm
-3, oxygen concentration is 8 * 10
17Cm
-3, resistivity is 10 ohm. centimetre.In order in silicon chip, to form clean area and volume defect district, with silicon chip in heat-treatment furnace in 1200 ℃ of insulations 2 hours, then 750 ℃ of insulations 16 hours down, the back of finishing dealing with was 1050 ℃ of insulations 16 hours.All heat treatment is all carried out under argon atmospher.Silicon chip after the heat treatment corroded 5 minutes through cleavage and in Sirtl preferential etch liquid, with OLYMPUS MX50 type microscope the defect distribution situation of cleavage surface was observed then and took pictures.
In order to do contrast, oxygen concentration is all identical with resistivity, and the common czochralski silicon monocrystal (CZ-Si) that concentration of carbon is lower than the infrared acquisition limit also experiences identical processing.Fig. 1 has provided through after the aforesaid heat treatment, the photo of the cleavage surface defect distribution of ordinary straight pulled silicon wafer (CZ-Si) and carbon dope Czochralski silicon wafer (HCCZ-Si), figure (a) and (b) be to amplify 200 times microphoto wherein, figure (c) and (d) be the microphoto of 1000 times of amplifications.From Fig. 1 (a) and (b) as can be seen, after three step intrinsic gettering Technologies for Heating Processing, clean (DZ) district and bulky micro defect (BMD) district in CZ-Si and HCCZ-Si, have all been formed, and the width of clean area is close substantially, can both reach more than the 20 μ m, show that the carbon doped silicon sheet that the present invention proposes can satisfy large scale integrated circuit to form the requirement of high-purity zero defect thin layer on the nearly surface of silicon chip.
From Fig. 1 (c) and (d) as can be seen, through having formed the oxygen precipitation more more intensive in the HCCZ-Si body behind the three step systemic impurity process than CZ-Si, in bulky micro defect (BMD) district, form more highdensity microdefect and will help intrinsic gettering, improve the gettering effect of silicon chip poisonous metal in the device manufacturing processes.
Embodiment 2
Choose 3 inches carbon dope Czochralski silicon wafers of argon shield growth, concentration of carbon is 5 * 10
16Cm
-3, oxygen concentration is 15 * 10
17Cm
-3, resistivity is 1 ohm. centimetre.Silicon chip is entered heat-treatment furnace and is incubated 2 hours under 1150 ℃, then be incubated 50 hours down at 650 ℃, the back of finishing dealing with was 1100 ℃ of insulations 6 hours.All heat treatment is all carried out under argon atmospher.Can obtain having the silicon chip of intrinsic gettering ability, have the flawless clean area of certain width, have the microdefect (oxygen precipitation and secondary defect) of certain density in vivo on nearly surface.
Embodiment 3
Choose 4 inches carbon dope Czochralski silicon wafers of argon shield growth, concentration of carbon is 3 * 10
17Cm
-3, oxygen concentration is 6 * 10
17Cm
-3, resistivity is 20 ohm. centimetre.Silicon chip is entered heat-treatment furnace and is incubated 0.5 hour under 1250 ℃, then be incubated 10 hours down at 850 ℃, the back of finishing dealing with was 1200 ℃ of insulations 20 hours.All heat treatment is all carried out under argon atmospher.Also can obtain having the silicon chip of intrinsic gettering ability, have the flawless clean area of certain width, have the microdefect (oxygen precipitation and secondary defect) of certain density in vivo on nearly surface.
Claims (1)
1. preparation method with carbon doped silicon sheet of internal impurity absorbing function is characterized in that step is as follows:
1) adopt the Grown by CZ Method crystal, obtaining oxygen concentration by technological parameter in the control crystal growing process is 5～15 * 10
17Cm
-3, concentration of carbon is 5～30 * 10
16Cm
-3Carbon doped silicon sheet;
2) be 5～15 * 10 with oxygen concentration
17Cm
-3, concentration of carbon is 5～30 * 10
16Cm
-3Carbon doped silicon sheet, under argon gas or protection of nitrogen gas, in heat-treatment furnace earlier 1100～1250 ℃ of insulations 1～3 hour, then 600～900 ℃ of insulations 4～50 hours, again 1000～1200 ℃ of insulations 4～30 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410084529 CN1269186C (en) | 2004-11-22 | 2004-11-22 | Carbon doped silicon sheet with internal impurity absorbing function and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410084529 CN1269186C (en) | 2004-11-22 | 2004-11-22 | Carbon doped silicon sheet with internal impurity absorbing function and production thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1644767A CN1644767A (en) | 2005-07-27 |
| CN1269186C true CN1269186C (en) | 2006-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410084529 Expired - Fee Related CN1269186C (en) | 2004-11-22 | 2004-11-22 | Carbon doped silicon sheet with internal impurity absorbing function and production thereof |
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| Country | Link |
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| CN (1) | CN1269186C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101231412B1 (en) * | 2009-12-29 | 2013-02-07 | 실트로닉 아게 | Silicon wafer and production method therefor |
| CN105316767B (en) * | 2015-06-04 | 2019-09-24 | 上海超硅半导体有限公司 | Super large-scale integration silicon wafer and its manufacturing method, application |
| CN106917143A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of improvement silicon chip inside oxygen precipitation and the method for obtaining clean surface area |
| SG11201900068PA (en) * | 2016-07-06 | 2019-02-27 | Tokuyama Corp | Single crystal silicon plate-shaped body and production method therefor |
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Assignee: Wanxiang Silicon-Peak Electronics Co.,Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.7.21 to 2013.7.20 Contract record no.: 2008330000130 Denomination of invention: Carbon doped silicon sheet with internal impurity absorbing function and production thereof Granted publication date: 20060809 License type: Exclusive license Record date: 20080804 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.21 TO 2013.7.20 Name of requester: WANXIANG GUIFENG ELECTRONICS CO., LTD. Effective date: 20080804 |
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Granted publication date: 20060809 |