CN1269055A - Laser ablation method to fabricate color organic light emitting diode displays - Google Patents
Laser ablation method to fabricate color organic light emitting diode displays Download PDFInfo
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- CN1269055A CN1269055A CN98808734A CN98808734A CN1269055A CN 1269055 A CN1269055 A CN 1269055A CN 98808734 A CN98808734 A CN 98808734A CN 98808734 A CN98808734 A CN 98808734A CN 1269055 A CN1269055 A CN 1269055A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
Abstract
Laser radiation may be used to ablate organic materials (310, 520 and 730) as well as metals (400, 600 and 800). A method of using such laser ablation to selectively remove organic material and metal material from an organic light emitting device (OLED) work piece (1000) is disclosed. The ablation enables fabrication of multi-color pixels in OLED displays. A novel OLED structure having adjacent multi-colored organic stakes (10, 20 and 30) is disclosed. Further, a novel ablation chamber (900) in which an OLED structure (1000) may be subjected to laser ablation is also disclosed. The ablation chamber includes means for moving an OLED structure within the chamber, means for detecting an ablation endpoint, and means for suctioning ablated material from the chamber.
Description
The application relates to the provisional application (not assigning) that is entitled as " laser ablation methods of making color organic light emitting diode displays " that proposed on July 11st, 1997, and requires its priority.
The present invention relates to the organic luminescent device with polychrome pixel and the manufacturing installation and the method for this device.
Organic luminescent device (OLED) can be used for making display.This display can comprise the set of the light-emitting diode that is arranged in picture element (pixel).For panchromatic demonstration is provided, wish to make OLED have the polychrome pixel, more specifically saying so has red, blue and green subpixel.
In order to produce OLED, may must utilize the lithography process technology to set up the red, green and blue subpixel with red, blue and green subpixel.Yet, a spot of water not being introduced under the situation of OLED, implement desired photoetching technique, if be not impossible words, also may be very difficult.Unfortunately, OLED is for the extreme sensitivity that exists of water and oxygen.The a spot of moisture that is about the ppb order of magnitude just can cause the obvious reduction of display performance.This sensitiveness to water may become the serious challenge of hope being made the OLED manufacturing firm of polychrome OLED display.
A potential accommodation of photoetching process relates in the evaporation process of the organic layer in OLED and uses baffle.Although use the technology of baffle to have anhydrous advantage really, the strong mechanical constraints of baffle the fineness of mask.To the restriction of figure fineness, limited the resolution of the subpixel made from baffle again.Therefore because to the restriction of mask fineness, with the available subpixel of baffle greater than with the available subpixel of other process.The same restriction of antithetical phrase pixel size (being monitor resolution) may be owing to the dry corrosion process that has adopted such as plasma and RIE technology.So the display resolution that uses the non-aqueous technique technology to obtain may be less gratifying.
A kind of solution of the problems referred to above has been made a kind of monochromatic OLED display, and converts thereof into multicolor display by means of colour filter and/or from the color conversion of shorter wavelength.Owing to fall,, thereby be unsafty so the efficient of these OLED may be very low from most of light possible loss of colour filter or the emission of the subpixel that is converted.The adding of colour filter and transducer also may be owing to the needs that increased the additional processing step make the manufacturing of OLED complicated.
Based on the restriction that may have the OLED of colour filter or transducer from use, the applicant believes the single color emission device that adopts formation red, green and blue subpixel, may provide the best approach of polychrome OLED display.Therefore, OLED and the manufacture method thereof for utilization that has wherein reduced water and making exists demand.And, do not existed demand for the smallness of subpixel size by OLED that does not wish to limit and manufacture method thereof.
The demand can be met with the laser ablation methods of the applicant's manufacturing color organic light emitting diode displays.In the U.S. Patent No. 4925523 of authorizing people such as Braren (May 15 nineteen ninety) with authorize in people's such as Cathey the U.S. Patent No. 5232549 (on August 3rd, 1993), laser ablation technology is disclosed, classify the two as reference herein.
Therefore, the purpose of this invention is to provide a kind of OLED that unlikely comprises water.
Another object of the present invention provides a kind of method that has reduced the manufacturing OLED of the possibility that comprises water among the OLED.
Another purpose of the present invention provides a kind of OLED and manufacture method thereof that comprises the subpixel of high resolution display required size.
A further object of the present invention provides a kind of OLED with single red, blue, green subpixel.
Another object of the present invention is to make OLED with laser ablation methods.
Another object of the present invention provides the laser ablation system of a kind of OLED of manufacturing.
Another object of the present invention is the ablated material of surveying by means of the fluorescence of detecting material in the OLED workpiece.
Partly stated other purpose of the present invention and advantage in the following description, the common skilled person in present technique field will understand these purposes and advantage from these descriptions and/or from enforcement of the present invention.
In the process of accepting above-mentioned challenge, the applicant has developed a kind of organic luminescent device of innovation, and it comprises: support substrate; Overlay on the transparent hole injection layer on the described substrate; And overlay on first and second subpixel laminations that separate on the described hole injection layer, wherein: the described first subpixel lamination comprises (1) and can produce first color of light and overlay on active lower floor on the hole injection layer, and (2) can produce first conductor layer in the active lower floor of overlaying on of first color of light, can produce second color of light and overlay on active lower floor on the hole injection layer and the second subpixel lamination comprises (1), (2) can produce second conductor layer on the active downside of overlaying on of second color of light, and (3) overlay on the passive upper strata on second conductor layer, and described passive upper strata is by forming with the active lower floor identical materials of the first subpixel lamination.
The applicant has also developed a kind of method of making the innovation of the luminous subpixel in the organic luminescent device, and it comprises the following step: the substrate that the hole injection layer with covering is provided; Organic material lower floor is provided on hole injection layer; The electric conducting material upper strata that covers this lower floor is provided; And optionally ablate lower floor and top section, the part hole injection layer is exposed, and form luminous subpixel from the electric conducting material arrowband of the covering organic material arrowband that stays.
More particularly, have in the organic light-emitting device method of subpixel arrowband of the light that comprises organic material and hole-injecting material and be used to launch different wave length in making, the applicant has made improvement, and it comprises the organic material of the described device of optionally ablating and hole-injecting material so that form the step of described subpixel arrowband.
The applicant has also developed a kind of laser ablation system of innovation, and it comprises: the operating room that isolates workpiece in controlled atmosphere; The device that amount of moisture in the described operating room is controlled; The device that the location of workpiece in the described operating room is controlled; Make the device on the workpiece of laser focusing in the described operating room; Survey the device of the position of the ablated material on the described workpiece in the described operating room; And the device of removing ablated material from described operating room.
It will be appreciated that above-mentioned general description and following detailed description all only are exemplary and indicative, is not to proposing the restriction of the present invention of patent application.Be combined into herein with reference to and form the accompanying drawing of this specification part, show some embodiment of the present invention, and be used for explaining principle of the present invention with describing in detail.
Fig. 1-the 7th, vertical cross section shows the sequential step in the manufacture process of OLED embodiment of the present invention.
Fig. 8 is a flow chart, shows the processing step of method embodiment of the present invention.
Fig. 9 is the diagram that can be used for making the ablating workroom embodiment of the present invention of OLED.
Figure 10-the 12nd, vertical cross section shows flexible embodiment according to the present invention and makes sequential step in the OLED process.
Now, its example has been shown in the accompanying drawing in detail with reference to most preferred embodiment of the present invention.Sequence of process steps shown in Fig. 1-7 shows the best approach of making OLED.
With reference to Fig. 7, the OLED that finishes can comprise a plurality of red 10, green 20 and blue 30 laminations on the parallel arrowband that is patterned in hole-injecting material 200 compositions that cover substrate 100.Red lamination 10 can comprise active red pieces pixel arrowband 310 down, cover the first electronics injection material arrowband 410, the passive green subpixel arrowband 510 that covers the first electronics injection material arrowband 410, the second electronics injection material arrowband 610 that covers passive green subpixel arrowband 510, the passive blueing subpixel arrowband 710 that covers the second electronics injection material arrowband 610 and the 3rd electronics injection material arrowband 810 that covers passive blue subpixel arrowband 710 of arrowband 310 down.
The 6th electronics injection material arrowband 830 that blue subpixel lamination 30 can comprise active blue subpixel arrowband 730 and cover active blue subpixel arrowband 730.The color that it should be understood that the active lower floor in each lamination (10,20 and 30) can change and not surmount scope of the present invention.For example, in flexible embodiment of the present invention, lamination 10 can comprise the active lower floor of green material or blue look material.
Can come the OLED that finishes of shop drawings 7 according to the technology shown in Fig. 1-6.Fig. 1 graphically has one or more holes to inject the profile of the OLED substrate 100 of arrowband 200 (preferably transparent tin indium oxide (ITO)) on it.As an alternative, injection arrowband 200 in hole can be indium-zinc oxide (IZO).Substrate 100 can be the transparent rigid material such as glass that can support entire device 1000 when finishing.Can on substrate 100, make ITO arrowband 200 by means of with the wet etching of photoetching method or by means of laser ablation.ITO arrowband 200 can cross substrate 100 (as shown in Figure 1 from left to right), and can have the width that is suitable for pixel width and the thickness of 0.05-0.15 micrometer range.
With reference to Fig. 2, can on ITO arrowband 200, provide one or more lower floors 300 of the organic material composition that can produce first color of light jointly.For example, if first color of light is selected as being in red wavelength, then lower floor 300 can comprise the lamination by CuPc (phthalocyanine copper), NPB (4,4 '-two [N-(1-naphthyl)-N-phenyl-amino]-diphenyl) and Alq (hydroxyquinoline aluminum) composition.Can be the electronics injection material layer 400 of electric conductor (for example MgAg), can cover or be provided at the top of lower floor 300.Electronics injection material 400 can and have the thickness of 0.2-1.0 micron with the evaporation technology deposit when finishing.
With reference to Fig. 3, can use high-power laser beam such as excimer laser ablate electron injecting layer 400 and red color layer 300 in the selection area, so that in red lamination 10, produce the arrowband that red pieces pixel 310 and electronics injection material 410 (entering paper as shown in Figure 3) are formed.Depend on the wavelength and the light path design of laser, laser beam can be focused submicron-scale, so that form red subpixel when needing in arrowband as thin as a wafer.
For survey that the ITO arrowband reaches and ablation point, can use photo-detector.The ablation of organic red layer 300 produces visible fluorescence.But the ablation of ITO arrowband 200 does not produce tangible fluorescence.So, by means of surveying reducing or extinguishing of fluorescence, can determine that ITO arrowband 200 reaches and ablation point.Carry out best with pulse mode owing to ablate, to make it possible to after each pulse, measure the level of fluorescence, thus can determine quite accurately that ITO arrowband 200 reaches and point.
With reference to Fig. 4, can on ITO arrowband 200 and red lamination 10, provide one or more intermediate layers 500 of the organic material composition that can produce second color of light (for example green) jointly.Can be in the intermediate layer 500 top the second electronics injection material layer 600 is provided.Can on the intermediate layer 500 and the second electronics injection material layer 600, carry out selective laser and ablate, so that produce structure shown in Figure 5.Can produce the little gap (being about 2.0 microns) between red lamination 10 and the green lamination 20 with ablating.
With reference to Fig. 5, red lamination 10 comprises active red pieces pixel arrowband 310 down, covers the first electronics injection material arrowband 410, the passive green subpixel arrowband 510 that covers the first electronics injection material arrowband 410 and the second electronics injection material arrowband 610 that covers passive green subpixel arrowband 510 of red arrowband 310 down.
Continuation is with reference to Fig. 5, and green lamination 20 can comprise active green subpixel arrowband 520 down and cover the quadrielectron injection material arrowband 620 of green arrowband 520 down.
With reference to Fig. 6, it is top layer 700 that one or more upper stratas of the organic material composition that can produce the 3rd color of light (for example blue) jointly can be provided on ITO arrowband 200, red lamination 10 and green lamination 20.Can be on the upper strata 700 top the 6th electronics injection material layer 800 is provided.Can on upper strata 700 and the 6th electronics injection material layer 800, carry out selective laser and ablate, so that produce structure shown in Figure 7.
With reference to Fig. 7, the OLED that finishes can comprise red lamination 10, green lamination 20 and Lan Se lamination 30.Red lamination 10 can comprise active red pieces pixel arrowband 310, the first electronics injection material arrowband 410, passive green subpixel arrowband 510, the second electronics injection material arrowband 610, passive blueing subpixel arrowband 710 and the 3rd electronics injection material arrowband 810 down.Green lamination 20 can comprise active green subpixel arrowband 520, quadrielectron injection material arrowband 620, passive blueing subpixel arrowband 720 and the 5th electronics injection material arrowband 820 down.Blue subpixel lamination 30 can comprise active blue subpixel arrowband 730 and the 6th electronics injection material arrowband 830.
Continuation is with reference to Fig. 7, in service at the OLED 1000 that finishes, and the bottommost electronics that voltage can only be added in each subpixel lamination 10,20,30 injects arrowband (that is first arrowband 410, the 4th arrowband 620 and the 6th arrowband 830).Can inject the arrowband with the electronics of bottommost arrowband (that is second arrowband 610, the 3rd arrowband 810 and the 5th arrowband 720) short circuit is injected in intermediate layer and last electronics, so that avoid the trouble of the floating electrode that do not connect.
The color of this lamination emission will be determined in the subpixel arrowband that descends most in each subpixel lamination.The emission spectrum of the organic layer arrowband that contacts with the ITO layer is not subjected to the influence of other organic layer on its top, and this is because last organic layer does not have hole injection layer.For example, with reference to Fig. 7, because red subpixel layer is unique layer that the contact electronics injects arrowband (first arrowband 410) and injection arrowband, hole (ITO arrowband 200), so red lamination 10 is only with red-emitting.Owing to do not have hole injection layer (ITO) to contact with blue arrowband 710, so these arrowbands in the red lamination 10 may be not luminous with green arrowband 510.Equally, 20 possibilities of green lamination transmitting green light, and 30 of blue laminations may be launched blue light.
Can provide each electronics injection material arrowband (410,610,810,620,820 and 830) with the Mg/Ag narrow metallic tapes.The contiguous reflecting surface that provides in red, green, blue arrowband (310,520,730) that an advantage that adopts the metal of this specific type is it under.Electronics injection material arrowband 410,620 and 830 can forbid that light enters the upper strata of organic lamination 10,20 and 30, thereby has reduced optical loss and undesirable chromatic noise.In addition, reflective metal surfaces can or all reflect back into the observation side of display with the most of of the light that produces in the most following active arrowband, thereby improves display brightness.
In a flexible embodiment of the present invention, can make the OLED that finishes shown in Figure 7 according to the technology shown in Figure 10-12.Figure 10 is the profile of OLED substrate 100, graphically has one or more holes to inject lower floor 300 that arrowband 200 (preferably transparent tin indium oxide (ITO)), one or more organic material that can produce the covering ITO arrowband 200 of first color of light jointly forms and the electronics injection material layer 400 that covers lower floor 300 on it.
With reference to Figure 11, can use ablate electron injecting layer 400 in the selection area of high-power laser beam such as excimer laser, so that produce electronics injection material arrowband 410 (entering paper as shown in figure 11).According to the wavelength and the light path design of laser, laser beam can focus on submicron-scale, thereby the electronics injection material is made into as thin as a wafer arrowband.
With reference to Figure 12, can use etching process (preferably oxygen plasma corrosion) below electronics injection material arrowband 410, to make the thin arrowband 310 that organic material is formed.Electronics injection material 410 can be used as etching mask, and organic material arrowband 310 and electronics injection material 410 are coextended.
The above-mentioned technology of explaining with reference to Figure 10-12 can be used for making the extra organic lamination (not shown) on lamination 10 next doors, and the technology of explaining as reference Fig. 1-7 may be repeated to form lamination 10,20 and 30.
Fig. 9 shows the laser ablation system embodiment of the present invention that is used for making OLED of the present invention.This system can comprise mobile platform 910, laser ablation detector 920, light path subsystem 930, atmosphere inflation inlet 940, exhaust outlet 950 and the laser beam input port 960 in core segment 900, the operating room.
In the laser ablation course of processing, workpiece 1000 can be supported and be fixed on the mobile platform 910 in the operating room 900.Platform 910 can provide a kind of method to control the position of workpiece 1000 with respect to laser beam 962, and can comprise one or more servo motors 912, is used for along one dimension, two dimension or three-dimensional mobile platform.Platform 910 can move along the x-y plane, so that cross over the static laser beam 962 of workpiece 1000 scannings.Platform 910 can move along the z direction, so that laser beam 962 is focused on the workpiece 1000.
The laser (not shown) can be positioned at 900 outsides, operating room, and can provide first group of light path by being arranged in 960 places, laser beam input port to be coupled to the laser beam 962 of operating room.In case enter operating room 900, just can laser beam 962 be guided and focus on the workpiece 1000 that is fixed on the mobile platform 910 with light way system 930.Light path subsystem 930 can comprise the many optical elements such as level crossing 932 and lens 934, thereby can provide and be used for the device of laser focusing on workpiece 1000.Optical subsystem 930 also can comprise mask and the projection optics element with suitable coefficient of reduction.
In a flexible embodiment, can cross workpiece 1000 scanning laser beams 962 of fixed-site by means of adjusting optical subsystem 930, ablate.If carry out laser ablation by means of crossing over static workpiece scanning laser beam 962, then can as one man scan with detector 920 and laser beam.
By means of light emission or its loss of surveying in the ablated area, detector 920 can be used for determining reaching and point of ITO material layer in the ablating technics.By means of form laser beam is applied to workpiece 1000, can detects the accurate transition point between organic material and the ITO material with discrete pulse.Because hope is ablated to downwards but does not enter the ITO material, so above-mentioned technology is being very useful aspect the control ablation depth.
The type of used detector 920 can be very sensitive, for example can survey once the emission of several photons.When being applied to blood platelet on ablation artery inwall with restricted manner, this detector surveys the ablation terminal point.
Can in above-mentioned operating room 900, utilize the pulse laser beam of one or more wavelength, carry out ablation, to stay red, green, blue subpixel lamination (Fig. 1 10,20 and 30) the selected part of OLED.With reference to flow chart shown in Figure 8 and the ablation system of Fig. 9, an embodiment of ablative method of the present invention is described.
At first, according to the step 1100 of Fig. 8, comprise and treat and to pack in the deposit operating room with the workpiece of the substrate of organic material coating.In step 1110, can use ITO, organic and electronics injection material, to meet the suitable figure of the step shown in Fig. 1-2, the coating workpiece.In step 1120, can unload workpiece from the deposit operating room.In step 1130, workpiece can be fixed to the mobile platform in the laser ablation operating room.Then can the sealed laser ablating workroom and use the inert gas such as argon or nitrogen to be inflated to nominal pressure 1.0-1.1 atmospheric pressure.Can as one man carry out the discharge of laser ablation and ablated material with step shown in Figure 3 then.In step 1140, can load deposit operating room same as described above or different operating rooms.In step 1150, can use the organic and electronics injection material of the second layer, to meet the suitable figure of step shown in Figure 4, the coating workpiece.In step 1160, can unload workpiece from the deposit operating room.Get back to step 1130, can once more workpiece be fixed to the mobile platform in the laser ablation operating room; Can the sealed laser ablating workroom and inflate with inert gas; And can as one man carry out desired laser ablation with step shown in Figure 5.In step 1170, can load the deposit operating room for the third time.In step 1180, can be with the 3rd layer of organic and electronics injection material, to meet the suitable figure of step shown in Figure 6, the coating workpiece.In step 1190, can unload workpiece from the deposit operating room.
Obviously, for the one skilled in the art, can not surmount scope of the present invention and design making various corrections and change aspect structure of the present invention, structure and/or the operation.For example, in above-mentioned each embodiment, aspect the order and selection of luminous organic material, can make various changes and do not surmount scope of the present invention and design.And, to the system of the workpiece that is used for ablating and the system that is used for surveying the ablation terminal point carry out extra correction or change, be suitable and do not surmount scope of the present invention.So, can think that the present invention has covered various correction of the present invention and change, as long as they are in claims and equivalent scope thereof.
Claims (45)
1. organic luminescent device, it comprises:
Support substrate;
Overlay on the transparent hole injection layer on the described substrate; And
Overlay on the first and second subpixel laminations that separate on the described hole injection layer, wherein:
The described first subpixel lamination comprises (1) and can produce first color of light and overlay on active lower floor on the hole injection layer, and (2) can produce first conductor layer in the active lower floor of overlaying on of first color of light, and
The described second subpixel lamination comprises (1) and can produce second color of light and overlay on active lower floor on the hole injection layer, (2) can produce second conductor layer in the active lower floor of overlaying on of second color of light, and (3) overlay on the passive upper strata on second conductor layer, and described passive upper strata is by forming with the active lower floor identical materials of the first subpixel lamination.
2. the device of claim 1, transparent hole injection layer wherein comprise the material of selecting from the group that indium tin oxide and indium-zinc oxide constitute.
3. the device of claim 1, the group of red, blue and green formation that first and second color of light wherein are selected from.
4. the device of claim 1, first conductor layer wherein comprises the reflecting surface that contacts with the active lower floor that can produce first color of light.
5. the device of claim 1, first conductor layer wherein comprise the thin arrowband that electric conducting material is formed.
6. the device of claim 1, hole injection layer wherein comprise the thin arrowband that electric conducting material is formed.
7. the device of claim 1, the second subpixel lamination wherein also comprises the 3rd conductor layer on the passive upper strata of covering that can produce first color of light; And this device also comprises the 3rd subpixel lamination, this the 3rd subpixel lamination has the active lower floor on the hole injection layer of overlaying on that (1) can produce the 3rd color of light, (2) can produce the 4th conductor layer in the active lower floor of overlaying on of the 3rd color of light, (3) overlay on passive intermediate layer on the 4th conductor layer, described passive intermediate layer is by forming with the active lower floor identical materials of the second subpixel lamination, (4) overlay on the 5th conductor layer on the passive intermediate layer, (5) overlay on passive top layer on the 5th conductor layer, described passive top layer is by forming with the active lower floor identical materials of the first subpixel lamination, and (6) overlay on the 6th conductor layer on the passive top layer.
8. organic luminescent device, it comprises:
Transparent support substrate;
Overlay on the transparent indium-tin-oxide arrowband on the described substrate; And
Overlay on first, second and the 3rd subpixel lamination that separate on the described hole injection layer, wherein:
The described first subpixel lamination comprises (1) and can produce first color of light and overlay on active lower floor on the hole injection layer, and (2) can produce first conductor layer in the active lower floor of overlaying on of first color of light.
The described second subpixel lamination comprises (1) and can produce second color of light and overlay on active lower floor on the hole injection layer, (2) can produce second conductor layer in the active lower floor of overlaying on of second color of light, (3) overlay on passive upper strata on second conductor layer, described passive upper strata is by forming with the active lower floor identical materials of the first subpixel lamination, and (4) overlay on the 3rd conductor layer that can produce first color of light on the passive upper strata, and
Described the 3rd subpixel lamination comprises the active lower floor on the hole injection layer of overlaying on that (1) can produce the 3rd color of light, (2) can produce the 4th conductor layer in the active lower floor of overlaying on of the 3rd color of light, (3) overlay on passive intermediate layer on the 4th conductor layer, described passive intermediate layer is by forming with the active lower floor identical materials of the second subpixel lamination, (4) overlay on the 5th conductor layer on the passive intermediate layer, (5) overlay on passive top layer on the 5th conductor layer, described passive top layer is by forming with the active lower floor identical materials of the first subpixel lamination, and (6) overlay on the 6th conductor layer on the passive top layer.
Wherein said first, second respectively comprises light reflective surface with the 4th conductor layer.
9. organic luminescent device, it comprises:
Support substrate;
Overlay on the transparent hole injection layer on the described substrate; And
Overlay on the first and second subpixel laminations that separate on the described hole injection layer,
The wherein said first subpixel lamination comprises the lower floor that is made up of first kind organic material that (1) overlays on the described hole injection layer and contacts described hole injection layer, and (2) overlay on the upper strata of being made up of the second type organic material in the described lower floor, and
The wherein said second subpixel lamination comprises the lower floor that is made up of the second type organic material that overlays on the described hole injection layer and contact described hole injection layer.
10. method that the luminous subpixel in the organic luminescent device is provided, it comprises the following step:
The substrate of the hole injection layer with covering is provided;
Organic material lower floor is provided on hole injection layer;
The electric conducting material upper strata that covers this lower floor is provided; And
Optionally ablate lower floor and top section expose the part hole injection layer, and form luminous subpixel with the electric conducting material arrowband of the covering organic material arrowband that is left.
11. the method for claim 10, wherein the step of selectivity ablation comprises laser ablation.
12. the method for claim 10, wherein the step of selectivity ablation comprises pulse laser ablation.
13. the method for claim 10, wherein the selectivity step of ablating comprises with more than one wavelength and carries out laser ablation.
14. the method for claim 10 also is included in the step of the substrate that hole injection layer, lower floor and upper strata with covering are provided in the ablating workroom with controlled atmosphere.
15. the method for claim 14 also comprises the step that the ablating workroom with vacuum atmosphere is provided.
16. the method for claim 14 also comprises the step that the ablating workroom with inert gas atmosphere is provided.
17. the method for claim 10 also is included in the step of the ablated material of sucking-off in the selectivity assisted ablation step.
18. the method for claim 10 also comprises the following step:
In the selectivity assisted ablation step, near the fluorescent emission monitoring is ablated; And
Control ablation in response to the change of the fluorescent emission that monitors.
19. the method for claim 18, wherein the control step of ablating comprises the step that apply of control laser beam to the substrate on hole injection layer, lower floor and upper strata with covering.
20. the method for claim 18, wherein the step of control ablation comprises the step of the substrate that moves hole injection layer, lower floor and upper strata with covering.
21. the method for claim 18 also comprises device with the monitoring fluorescent emission and filters the fluorescent emission monitor so that reduce detection to laser.
22. the method for claim 10, wherein the step of selectivity ablation comprises the step that optionally moves the substrate on hole injection layer, lower floor and upper strata with covering.
23. the method that the luminous subpixel in the organic luminescent device is provided, it comprises the following step:
The substrate of the hole injection layer with covering is provided;
Organic material lower floor is provided on hole injection layer;
The electric conducting material upper strata that covers this lower floor is provided;
The substrate on hole injection layer, lower floor and upper strata with covering is provided in having the ablating workroom of controlled atmosphere;
With laser pulse optionally ablate lower floor and top section, the part hole injection layer is exposed, and form luminous subpixel with the electric conducting material arrowband of the covering organic material arrowband that is left;
The ablated material of sucking-off in the selectivity assisted ablation step;
In the selectivity assisted ablation step, near the fluorescent emission monitoring is ablated; And
Control ablation in response to the change of the fluorescent emission that monitors.
24. make the organic light-emitting device method for one kind, it comprises the following step:
The substrate of the hole injection layer with covering is provided;
First organic layer is provided on hole injection layer;
First electron injecting layer is provided on first organic layer;
Optionally remove part first organic layer and first electron injecting layer, so that expose portion hole injection layer and form the first subpixel arrowband from the first electronics injection material arrowband that overlays on the first organic material arrowband;
On the expose portion of hole injection layer and first subpixel, provide second organic layer;
Second electron injecting layer is provided on second organic layer; And
Optionally remove part second organic layer and second electron injecting layer, so that the expose portion hole injection layer also forms the second subpixel arrowband that separates and be arranged essentially parallel to the first subpixel arrowband with the first subpixel arrowband once more.
25. the method for claim 24, first and second organic layers wherein are used to provide different visible wavelengths in that organic light-emitting device is in service.
26. the method for claim 24 also comprises the following step:
On hole injection layer part, the second subpixel arrowband and the first subpixel arrowband that exposes once more, provide the 3rd organic layer;
The 3rd electron injecting layer is provided on the 3rd organic layer; And
Optionally remove part the 3rd organic layer and the 3rd electron injecting layer, so that form the 3rd subpixel arrowband that separates and be arranged essentially parallel to the second subpixel arrowband with the second subpixel arrowband.
27. the method for claim 24, wherein at least one in first, second and the 3rd electron injecting layer comprises metal.
28. the method for claim 24, hole injection layer wherein comprises indium tin oxide.
29. the method for claim 24, the step of wherein said selective clearing comprises laser ablation step.
30. the method for claim 29, laser ablation step wherein comprises the following step:
Provide device substrate on the movably platform in ablating workroom;
Laser is provided to focusing system in the ablating workroom;
With the laser that receives from focusing system, the material on the device of optionally ablating; And
Get rid of ablated material from device.
31. the method for claim 30 also comprises the following step:
Ablated material on the sensitive detection parts; And
Mobile platform optionally is so that form required ablated material figure on device in response to the detection of ablated material.
32. the method for claim 24 wherein provides the step of first and second organic layers and the step of selective clearing, carries out in the environment of having controlled moisture.
33. have comprise organic and hole-injecting material be used for launching in the manufacture method of organic light-emitting device of subpixel arrowband of light of different wave length, the improvement of being done comprises selectivity and ablates the organic and hole-injecting material of described device so that form the step of described subpixel arrowband.
34. a laser ablation system, it comprises:
The operating room that in controlled atmosphere, isolates workpiece;
The device that amount of moisture in the described operating room is controlled;
The device that the location of workpiece in the described operating room is controlled;
Make the device on the workpiece of laser focusing in the described operating room;
Survey the device of the position of the ablated material on the described workpiece in the described operating room; And
Remove the device of ablated material from described operating room.
35. the system of claim 34, the device of the wherein said control location of workpiece is used to respond the signal that receives from the device of the position of the ablated material of described detection and controls the location of workpiece.
36. the system of claim 34 wherein controls the device of the location of workpiece, comprises any one platform that moves that can be used to along in three vertical axles.
37. the system of claim 34 wherein removes the device of ablated material, comprises the exhaust source of the outside, operating room of the exhaust nozzle that is connected to inside, operating room.
38. the method that the luminous subpixel in the organic luminescent device is provided, it comprises the following step:
The substrate of the hole injection layer with covering is provided;
Organic material lower floor is provided on hole injection layer;
The electric conducting material upper strata that covers this lower floor is provided;
Optionally the ablating part upper strata exposes part lower floor;
Optionally remove part lower floor, the part hole injection layer is exposed, and form luminous subpixel with the electric conducting material arrowband of remaining covering organic material arrowband.
39. the method for claim 38, the step of wherein optionally removing part lower floor comprises the optionally step of ablating part lower floor.
40. the method for claim 39, wherein the step of selectivity ablation comprises pulse laser ablation.
41. the method for claim 39 also is included in the step of the ablated material of discharge in the selectivity assisted ablation step.
42. the method for claim 39 also comprises the following step:
In the selectivity assisted ablation step, near the fluorescent emission monitoring is ablated; And
Control ablation in response to the change of the fluorescent emission that monitors.
43. the method for claim 42, wherein the step of control ablation comprises the step that optionally moves the substrate on hole injection layer, lower floor and upper strata with covering.
44. the method for claim 42 also comprises device with the monitoring fluorescent emission and filters the fluorescent emission monitor so that reduce detection to laser.
45. the method for claim 39, wherein the step of selectivity ablation comprises the step that optionally moves the substrate on hole injection layer, lower floor and upper strata with covering.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5235697P | 1997-07-11 | 1997-07-11 | |
| US60/052,356 | 1997-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1269055A true CN1269055A (en) | 2000-10-04 |
| CN1151563C CN1151563C (en) | 2004-05-26 |
Family
ID=21977083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB988087340A Expired - Fee Related CN1151563C (en) | 1997-07-11 | 1998-07-02 | Laser ablation method to fabricate color organic light emitting diode displays |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1021839A1 (en) |
| KR (1) | KR20010021742A (en) |
| CN (1) | CN1151563C (en) |
| HK (1) | HK1030481A1 (en) |
| WO (1) | WO1999003157A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319181C (en) * | 2001-12-27 | 2007-05-30 | 伊斯曼柯达公司 | Mfg. method of vacuum in situ of OLED device |
| CN102530826A (en) * | 2010-09-29 | 2012-07-04 | 英飞凌科技股份有限公司 | Chip, method for producing a chip and device for laser ablation |
| CN103098215A (en) * | 2010-08-24 | 2013-05-08 | 皇家飞利浦电子股份有限公司 | Organic electroluminescent device |
| CN103681762A (en) * | 2012-09-14 | 2014-03-26 | 环球展览公司 | Lifetime OLED display |
| CN103733311A (en) * | 2011-08-08 | 2014-04-16 | 应用材料公司 | Thin film structures and devices with integrated light and heat blocking layers for laser patterning |
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| JP5079942B2 (en) * | 1999-04-07 | 2012-11-21 | サン−ゴバン グラス フランス ソシエテ アノニム | Apparatus and method for delamination of thin layers on a carrier material |
| KR20020077484A (en) * | 2000-12-20 | 2002-10-11 | 다이셀 가가꾸 고교 가부시끼가이샤 | Material for Organic Electroluminescence Device and Its Manufacturing Method |
| DE10117663B4 (en) * | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Process for the production of matrix arrangements based on various types of organic conductive materials |
| DE10236854B4 (en) * | 2002-08-07 | 2004-09-23 | Samsung SDI Co., Ltd., Suwon | Method and device for structuring electrodes of organic light-emitting elements |
| GB0224121D0 (en) * | 2002-10-16 | 2002-11-27 | Microemissive Displays Ltd | Method of patterning a functional material on to a substrate |
| US6909233B2 (en) | 2003-06-11 | 2005-06-21 | Eastman Kodak Company | Stacked OLED display having improved efficiency |
| GB0408569D0 (en) * | 2004-04-16 | 2004-05-19 | Exitech Ltd | Method of patterning a functional material on to a substrate |
| GB0412000D0 (en) * | 2004-05-28 | 2004-06-30 | Cambridge Display Tech Ltd | Apparatus and method for extracting debris during laser ablation |
| US7341886B2 (en) | 2005-03-03 | 2008-03-11 | Eastman Kodak Company | Apparatus and method for forming vias |
| US7384816B2 (en) | 2005-03-03 | 2008-06-10 | Eastman Kodak Company | Apparatus and method for forming vias |
| KR100647693B1 (en) | 2005-05-24 | 2006-11-23 | 삼성에스디아이 주식회사 | Organic tft, method for fabricating the same and flat panel display with otft |
| GB2481190B (en) * | 2010-06-04 | 2015-01-14 | Plastic Logic Ltd | Laser ablation |
| DE102017119311B4 (en) | 2017-08-23 | 2019-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a multi-colored luminous component |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5294870A (en) * | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
| US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
-
1998
- 1998-07-02 WO PCT/US1998/013633 patent/WO1999003157A1/en not_active Application Discontinuation
- 1998-07-02 EP EP98931747A patent/EP1021839A1/en not_active Withdrawn
- 1998-07-02 KR KR1020007000305A patent/KR20010021742A/en not_active Application Discontinuation
- 1998-07-02 CN CNB988087340A patent/CN1151563C/en not_active Expired - Fee Related
-
2001
- 2001-02-23 HK HK01101307A patent/HK1030481A1/en not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319181C (en) * | 2001-12-27 | 2007-05-30 | 伊斯曼柯达公司 | Mfg. method of vacuum in situ of OLED device |
| CN103098215A (en) * | 2010-08-24 | 2013-05-08 | 皇家飞利浦电子股份有限公司 | Organic electroluminescent device |
| CN103098215B (en) * | 2010-08-24 | 2016-08-24 | 皇家飞利浦电子股份有限公司 | Organic electroluminescence device |
| CN102530826A (en) * | 2010-09-29 | 2012-07-04 | 英飞凌科技股份有限公司 | Chip, method for producing a chip and device for laser ablation |
| CN102530826B (en) * | 2010-09-29 | 2015-09-09 | 英飞凌科技股份有限公司 | Assembly, the method for the manufacture of assembly and the device for laser ablation |
| CN103733311A (en) * | 2011-08-08 | 2014-04-16 | 应用材料公司 | Thin film structures and devices with integrated light and heat blocking layers for laser patterning |
| CN103681762A (en) * | 2012-09-14 | 2014-03-26 | 环球展览公司 | Lifetime OLED display |
| US10586486B2 (en) | 2012-09-14 | 2020-03-10 | Universal Display Corporation | Lifetime OLED display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1151563C (en) | 2004-05-26 |
| WO1999003157A1 (en) | 1999-01-21 |
| KR20010021742A (en) | 2001-03-15 |
| EP1021839A1 (en) | 2000-07-26 |
| HK1030481A1 (en) | 2001-05-04 |
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