CN1262443A

CN1262443A - Radiation effect detector for satellite

Info

Publication number: CN1262443A
Application number: CN 99102022
Authority: CN
Inventors: 范隆; 任迪远; 严荣良
Original assignee: Xinjiang Technical Institute of Physics and Chemistry of CAS
Current assignee: Xinjiang Technical Institute of Physics and Chemistry of CAS
Priority date: 1999-02-02
Filing date: 1999-02-02
Publication date: 2000-08-09
Anticipated expiration: 2019-02-02
Also published as: CN1125350C

Abstract

A radiation effect detector for satellite in order to dectect the influence of particle radiation to CMOS IC is disclosed to detect the threshold voltage value of N-channel transistorsin IC CC4007 which is sensitive to ionizing radiation. It is composed of measuring controller, constant current source, voltage output interface and CMOS4007 to be detected. One of channels in data acquisition system of satellite is used to control the start pulse. The threshold values of 6 N-channel transistors in IC "4007" are sequentially measured. Its advantages are low power, and high reliability.

Description

Radiation effect detector for satellite

The present invention is mainly used in and detects the influence of particle radiation to the CMOS integrated circuit, is the outer a kind of detector on the number extraction system on the star that is hung on.

Along with the development of spationautics, MOS microelectronic component and circuit are extensive further with the application in the electronic systems such as computing machine, observing and controlling at star.But well-known space radiation environment influence is the major reason that threatens MOS structure electrology characteristic always.Most typically be, the ionising radiation meeting causes the drift of MOS circuit valve voltage, causes leakage current to increase, and circuit power consumption increases, and serious meeting causes circuit logic mistake and afunction.Therefore, MOS circuit radiation hardening Study on Technology for tie surface, carrying out space radiation effect on the spot surveys, for the actual radioresistance effect of the MOS circuit of grasping the manufacturing of homemade reinforcing and non-reinforcement process in the space, relatively the difference between ground simulation and the space radiation environment has crucial function and significance.

The object of the invention is, developed and be used to detect the star CMOS radiation effect detector that 4007 pairs of complementary pairs of CMOS add phase inverter N sewer pipe threshold voltage, this detector is made up of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS 4007; This detector is installed on the satellite and uses, to reach the purpose of examination space radiation environment actual influence.This detector all in strict accordance with the enforcement of regulations of space product, has reached low-power consumption, highly reliable, in light weight, target that function is strong from the selected type of circuit design, components and parts and exterior design.

Star of the present invention is the supporting use of data acquisition system (DAS) on a kind of and the star with the CMOS radiation effect detector, is used to detect the detector of ionising radiation to the influence of CMOS integrated circuit, can finish 6 N sewer pipe threshold voltages in two 4007 are detected; This machine is made up of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS4007; Wherein circuit of measurement and control, constant-current source circuit and voltage output interface circuit all connect with measured device 4007; This machine circuit of measurement and control simulates switch (4), anti-phase buffering driver (5) and relay (6) by two monostable triggers (1), step-by-step counting code translator (2), delay circuit (3), six tunnel and forms; Wherein two monostalbe triggers (1), step-by-step counting/code translator (2), delay circuit (3), six tunnel simulate electronic switch (4) serial connection, connect with measured device 4007; Two monostalbe triggers (1), anti-phase/buffering driver (5), relay (6) serial connection connect with measured device 4007.Finish the switching of shaping to external measurement starting impulse, counting/decoding, time-delay, control electronic switch and miniature sensitive inductive relay to six tested N ditch metal-oxide-semiconductor pin states; This machine adopts the starting voltage of constant current injection method measuring N ditch metal-oxide-semiconductor, and constant current is provided by constant-current source circuit (7), the switching of sensitive microrelay (6) control constant current; Voltage follower circuit (8) is made up of with catching diode totalizer, benchmark 1403; By voltage output interface circuit (8) the starting voltage simulating signal that detects is adjusted into the output area of 0-5V, the actual threshold voltage measurement range be-2.50V extremely+2.50V; This machine circuit of measurement and control adopts the mode of automatically reseting that powers on, and constitutes the power-on reset signal circuit by 1/2 pair of monostable trigger (1), RC circuit, two inverter buffer (5); This machine circuit of measurement and control has adopted eight step-by-step counting decoding schemes, whenever receive that is measured a starting impulse, only finish measurement to a N ditch metal-oxide-semiconductor starting voltage, after receiving the 6th measurement starting impulse, promptly finished detection successively to 6 N ditch metal-oxide-semiconductors, when receiving the 7th, 8 measurement starting impulse, sky is put in corresponding code translator output, and this machine is output as disarmed state (output voltage is 5.00V); This machine circuit has adopted anti-locking design measure; To the equipment three-way power (+12V ,-12V ,+5V) input end all adopted the resistance current limliting; The power of current-limiting protection circuit element and withstand voltage derate are used the components and parts of amount greater than protected circuit; Current limliting intensity :+12V end is 40mA;-12V ,+the 5V end is 10mA; Amplifier on the voltage output is used positive and negative dual power supply, and output level has been carried out clamp; All suspension input port ground connection of circuit or meet 12V; In relay line bag two ends protection in parallel diode and the resistance in series that the CMOS inverter buffer drives, form the holding circuit of anti-reverse pulse.

Referring to accompanying drawing

Fig. 1 is a principle of the invention block diagram

Fig. 2 is a circuit diagram of the present invention

Further describe and provide embodiment below in conjunction with accompanying drawing

Star of the present invention CMOS radiation effect detector, when satellite injection flight, data acquisition system (DAS) is sent the input end of a starting impulse to detector on the star, the amplitude of this starting impulse is 5V, utilize level shifter that its amplitude is upgraded to 12V, then, send into the monostalbe trigger shaping, be modulated to pulsewidth and be 2 seconds control wave, this signal is controlled counting/code translator counting on the one hand, and by grounded-grid (the non-test period of simulant electronic switch with a pipe in six tested N sewer pipes among the CC4007, the grid of N sewer pipe meets 12V, makes it be in conducting state); On the other hand, this signal improves its driving force in order to pilot relay by inverter buffer, makes the source electrode of constant current source and measured tube connect (source ground of common tube), and 10 μ A electric currents inject measured tube.Thereby, make this tested N sewer pipe enter into starting voltage and measure state by irradiation positive bias state, at this moment, the source voltage that links with constant current source is the negative value of tested N sewer pipe starting voltage, this voltage is delivered to the voltage output interface circuit mainly to be made up of totalizer and catching diode that an amplifier constitutes) in the inverting input of amplifier, positive terminal in amplifier adds the 2.50V reference voltage, obtains an output voltage than the high 2.50V of tested starting voltage at the output terminal of amplifier.This is that ADC0816 is to the requirement of voltage acquisition scope in the number extraction systems in order to satisfy on the satellite, and the voltage output interface circuit is limited in output voltage in 0 to the 5.00V scope, thereby the actual measurement range of starting voltage is-and 2.50V～+ 2.50V.After the control signal of 2 seconds pulsewidths finished, relay, electronic switch restPosed, and make tested N sewer pipe return the irradiation bias state by the measurement state, waited for and measured starting impulse next time.

When step-by-step counting/code translator will guarantee satellite transit, within a certain period of time, six all N sewer pipe starting voltages are measured once successively, subsequently, sky is adopted twice (this moment, output voltage was 5.00V) order in order to the difference measurement data.

The star that the present invention developed has two states when working with the CMOS radiation effect detector: flight irradiation behaviour and measurement state; The flight irradiation behaviour is that CC4007 N ditch tube grid keeps 12V, P sewer pipe remain off; The measurement state: CC4007 N ditch tube grid becomes 0V from 12V, and its source electrode is converted to access 10 μ A constant current sources from meeting 0V, and the gate source voltage of this moment is starting voltage V _THAdopt the constant current injection method to measure the starting voltage of metal-oxide-semiconductor, sample selects for use the two complementary pairs of two CC4007 to add phase inverter, wherein a slice is the radiation hardened device, another sheet is common seven special devices, measured device is exposed in the star in the radiation environment, and the threshold voltage shift of these two kinds of device N ditch siphunculus of Measurement and analysis can be understood the actual effect of particle actual state and CMOS integrated circuit radiation hardening in the space environment.

Claims

1, the supporting use of data acquisition system (DAS) on a kind of and star, be used to detect the star CMOS radiation effect detector of ionising radiation to the influence of CMOS integrated circuit, can finish 6 N sewer pipe starting voltages in two 4007 are detected, it is characterized in that, this machine is made up of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS 4007, and wherein circuit of measurement and control, constant-current source circuit and voltage output interface circuit connect with measured device 4007 respectively.

2, star according to claim 1 CMOS radiation effect detector, it is characterized in that this machine circuit of measurement and control is made up of two monostable triggers (1), step-by-step counting code translator (2), delay circuit (3), six path analoging switch (4), anti-phase buffering driver (5) and relay (6); Wherein two monostable triggers (1), step-by-step counting/code translator (2), delay circuit (3), six tunnel simulate electronic switch (4) serial connection and connect with measured device 4007; Two monostable triggers (1), anti-phase/buffering driver (5), relay (6) serial connection connect with measured device 4007; To finish the switching of shaping to external measurement starting impulse, counting/decoding, time-delay, control electronic switch and miniature sensitive inductive relay to six tested NMOS pin status.

3, star according to claim 1 CMOS radiation effect detector is characterized in that, this machine adopts the starting voltage of constant current injection method measuring N ditch metal-oxide-semiconductor, and constant current is provided by constant-current source circuit (7), the switching of sensitive microrelay (6) control constant current.

4, star according to claim 1 CMOS radiation effect detector is characterized in that, voltage follower circuit (8) is made up of with catching diode totalizer, benchmark 1403; By voltage output interface circuit (8) the starting voltage simulating signal that detects is adjusted into the output area of 0-5V, the actual threshold voltage measurement range be-2.50V extremely+2.50V;

5, star according to claim 2 CMOS radiation effect detector, it is characterized in that, this machine circuit of measurement and control adopts the mode of automatically reseting that powers on, and constitutes the power-on reset signal circuit by 1/2 pair of monostable trigger (1), RC circuit, two inverter buffer (5).

6, star according to claim 2 CMOS radiation effect detector, it is characterized in that, this machine circuit of measurement and control has adopted eight step-by-step counting decoding schemes, whenever receive that is measured a starting impulse, only finish measurement, after receiving the 6th measurement starting impulse a N ditch metal-oxide-semiconductor starting voltage, promptly finished detection successively to 6 NMOS pipes, when receiving the 7th, 8 measurement starting impulse, sky is put in corresponding code translator output, and this machine is output as disarmed state (output voltage is 5.00V).

7, star according to claim 1 is visited device with the CMOS radiation effect, it is characterized in that this machine circuit has adopted anti-locking design measure, to the equipment three-way power (+12V ,-12V ,+5V) input end all adopted the resistance current limliting; The power of current-limiting protection circuit element and withstand voltage derate are used the components and parts of amount greater than protected circuit; Current limliting intensity; + 12V end is 40mA;-12V ,+the 5V end is 10mA; Amplifier on the voltage output is used positive and negative dual power supply, and output level has been carried out clamp; All suspension input port ground connection of circuit or meet 12V; In relay line bag two ends protection in parallel diode and the resistance in series that the CMOS inverter buffer drives, form the holding circuit of anti-reverse pulse.