CN1125350C

CN1125350C - Radiation effect detector for satellite

Info

Publication number: CN1125350C
Application number: CN 99102022
Authority: CN
Inventors: 范隆; 任迪远; 严荣良
Original assignee: Xinjiang Technical Institute of Physics and Chemistry of CAS
Current assignee: Xinjiang Technical Institute of Physics and Chemistry of CAS
Priority date: 1999-02-02
Filing date: 1999-02-02
Publication date: 2003-10-22
Anticipated expiration: 2019-02-02
Also published as: CN1262443A

Abstract

The present invention relates to a CMOS radiation effect detector for satellites, which is matched with an on-satellite data acquisition system to detect the influence of particle radiation on a CMOS integrated circuit; the present invention can finish detecting the threshold voltage values of NMOSs (n-type metal-oxide semiconductor)of CC4007 circuits, and the NMOSs are sensitive to ionizing radiation. The present invention is mainly composed of a measurement and control circuit, a constant current source circuit, a voltage output interface circuit and the CMOS 4007 circuit to be measured. A path of measurement initiating pulse control signals which are given by the on-satellite data acquisition system is adopted for sequentially measuring the threshold voltages of six NMOSs in two CC4007 circuits according to a time sequence and outputting and sending analog voltage signals to an analog-to-digital converter ADC0816 of the on-satellite data acquisition system. The detector has the characteristics of low power consumption and high reliability.

Description

Radiation effect detector for satellite

Technical field

The present invention is mainly used in and detects the influence of particle radiation to the CMOS integrated circuit, is the outer a kind of detector on the data acquisition system (DAS) on the satellite that is hung on.

Background technology

Along with the development of spationautics, MOS microelectronic component and circuit are extensive further with the application in the electronic systems such as computing machine, observing and controlling at star.But well-known space radiation environment influence is the major reason that threatens MOS structure electrology characteristic always.Most typically be, the ionising radiation meeting causes the drift of MOS circuit starting voltage, causes leakage current to increase, and circuit power consumption increases, and serious meeting causes circuit logic mistake and afunction.Therefore, MOS circuit radiation hardening Study on Technology for tie surface, carry out space radiation detection on the spot, for the actual radioresistance effect of the MOS circuit of grasping the manufacturing of homemade reinforcing and non-reinforcement process in the space, relatively the difference between ground simulation and the space radiation environment has crucial function and significance.

Summary of the invention

The objective of the invention is to, developed and be used to detect the star CMOS radiation effect detector that the two complementary pairs of CMOS4007 add phase inverter N sewer pipe starting voltage, this detector adds phase inverter by the two complementary pairs of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS4007 and forms, this detector is installed on the satellite and uses, to reach the purpose of examination space radiation environment actual influence.This detector all in strict accordance with the enforcement of regulations of space product, has reached low-power consumption, highly reliable, in light weight, target that function is strong from the selected type of circuit design, components and parts and exterior design.

Star of the present invention is the supporting use of data acquisition system (DAS) on a kind of and the star with the CMOS radiation effect detector, be used to detect the detector of ionising radiation, can finish and 4007 pairs of complementary pairs of two CMOS are added 6 N sewer pipe starting voltages detect in the phase inverter the influence of CMOS integrated circuit; This detector adds phase inverter by the two complementary pairs of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS4007 and forms, and wherein circuit of measurement and control, constant-current source circuit and voltage output interface circuit all add phase inverter with measured device CMOS4007 pair of complementary pairs and be connected; This detector measurement control circuit is made up of two monostable triggers (1), step-by-step counting code translator (2), delay circuit (3), six path analoging switch (4), anti-phase buffering driver (5) and relay (6); Wherein two monostable single-shot devices (1), step-by-step counting/code translator (2), delay circuit (3), six tunnel of touching simulate electronic switch (4) serial connection, add phase inverter with the two complementary pairs of measured device CMOS4007 and are connected; Two monostable triggers (1), anti-phase/buffering driver (5), relay (6) serial connection add phase inverter with the two complementary pairs of measured device CMOS4007 and are connected; Shaping, counting/decoding, time-delay, control electronic switch and the miniature sensitive inductive relay finished external measurement starting impulse switch six tested N ditch metal-oxide-semiconductor pin states.This detector adopts the starting voltage of constant current injection method measuring N ditch metal-oxide-semiconductor, and constant current is provided by constant-current source circuit (7), the switching of sensitive microrelay (6) control constant current; The source electrode of constant current source and measured tube is connected, and 10 μ A electric currents inject measured tube, make tested N sewer pipe enter into starting voltage by irradiation positive bias state and measure state, and the source voltage that links to each other with constant current source is the negative value of tested N sewer pipe starting voltage.Voltage output interface circuit (8) is that 1403 reference voltage sources and catching diode are formed by totalizer, model; By voltage output interface circuit (8) starting voltage that detects is simulated the output area that signal is adjusted into 0-5V, the actual threshold voltage measurement range be-2.50V extremely+2.50V; This detector measurement control circuit adopts the mode of automatically reseting that powers on, and constitutes the power-on reset signal circuit by 1/2 pair of monostable trigger (1), RC circuit, two inverter buffer (5); This detector control circuit has adopted eight step-by-step counting decoding schemes, whenever receive that is measured a starting impulse, only finish measurement to a N ditch metal-oxide-semiconductor starting voltage, after receiving the 6th measurement starting impulse, promptly finished detection successively to 6 N ditch metal-oxide-semiconductors, when receiving the 7th, 8 measurement starting impulse, sky is put in corresponding code translator output, and this detector is output as disarmed state (output voltage is 5.00V); This detector circuit has adopted anti-locking design measure, to the equipment three-way power (+12V ,-12V ,+5V) input end all adopted the resistance current limliting, the power of current-limiting protection circuit element and withstand voltage derate are used the components and parts of amount greater than protected circuit; Current limliting intensity :+12V end is 40mA;-12V ,+the 5V end is 10mA; Amplifier on the voltage output is used positive and negative dual power supply, and output level has been carried out clamp; All suspension input port ground connection of circuit or meet 12V; In relay line bag two ends protection in parallel diode and the resistance in series that the CMOS inverter buffer drives, form the holding circuit of anti-reverse pulse.

Description of drawings

Referring to accompanying drawing

Fig. 1 is a principle of the invention block diagram

Fig. 2 is a circuit diagram of the present invention

Embodiment

Further describe and provide embodiment below in conjunction with accompanying drawing

Star of the present invention CMOS radiation effect detector, when satellite injection flight, data acquisition system (DAS) is sent the input end of a starting impulse to detector on the satellite, the amplitude of this starting impulse is 5V, utilize level shifter that its amplitude is upgraded to 12V, then, send into the monostalbe trigger shaping, be modulated to pulsewidth and be 2 seconds control wave, this signal is controlled counting/code translator counting on the one hand, and the two complementary pairs of CMOS4007 are added in the phase inverter grounded-grid (the non-test period of a pipe in six tested N sewer pipes by simulant electronic switch, the grid of N sewer pipe meets 12V, makes it be in conducting state); On the other hand, this signal improves its driving force in order to pilot relay by inverter buffer, makes the source electrode of constant current source and measured tube connect (source ground of common tube), and 10 μ A electric currents inject measured tube.Thereby, make this tested N sewer pipe enter into starting voltage and measure state by irradiation positive bias state, at this moment, the source voltage that links to each other with constant current source is the negative value of tested N sewer pipe starting voltage, with this voltage deliver to totalizer that the voltage output interface circuit mainly is made of an amplifier and catching diode form in the inverting input of amplifier, add the reference voltage of 2.50V in the positive terminal of amplifier, obtain a output voltage than the high 2.50V of tested starting voltage at the output terminal of amplifier.This is that ADC0816 is to the requirement of voltage acquisition scope in the data acquisition system (DAS) on the satellite in order to satisfy, and the voltage output interface circuit is limited in output voltage in 0 to the 5.00V scope, thereby the actual measurement range of starting voltage is-and 2.50V～+ 2.50V.After the control signal of 2 seconds pulsewidths finished, relay, electronic switch restPosed, and make tested N sewer pipe return the irradiation bias state by the measurement state, waited for and measured starting impulse next time.

When step-by-step counting/code translator will guarantee satellite transit, within a certain period of time, six all N sewer pipe starting voltages are measured once successively, subsequently, sky is adopted twice (this moment, output voltage was 5.00V) order in order to the difference measurement data.

The star that the present invention developed has two states when working with the CMOS radiation effect detector, flight irradiation behaviour and measurement state; The flight irradiation behaviour is that the two complementary pairs of CMOS4007 add phase inverter N ditch tube grid maintenance 12V, P sewer pipe remain off, measurement state; The two complementary pairs of CMOS4007 add phase inverter N ditch tube grid and become 0V from 12V, and its source electrode is converted to access 10 μ A constant current sources from meeting OV, and the gate source voltage of this moment is starting voltage V _THAdopt the constant current injection method to measure the starting voltage of metal-oxide-semiconductor, sample selects for use the two complementary pairs of two CMOS4007 to add phase inverter, wherein a slice is the radiation hardened device, another sheet is common seven special devices, measured device is exposed in the interior radiation environment of star, and the threshold voltage shift of these two kinds of device N sewer pipes of Measurement and analysis can be understood particle actual state and the solid actual effect of CMOS integrated circuit radioresistance in the space environment.

Claims

1, the supporting use of data acquisition system (DAS) on a kind of and star, be used to detect the star CMOS radiation effect detector of ionising radiation to the influence of CMOS integrated circuit, can finish the two complementary pairs of two CMOS4007 are added 6 N ditch metal-oxide-semiconductor starting voltages detections in the phase inverter, it is characterized in that, this detector adds phase inverter by the two complementary pairs of circuit of measurement and control, constant-current source circuit, voltage output interface circuit and tested CMOS4007 and forms, and wherein circuit of measurement and control, constant-current source circuit and voltage output interface circuit add phase inverter with measured device CMOS4007 pair of complementary pairs respectively and be connected.

2, star according to claim 1 CMOS radiation effect detector, it is characterized in that this detector measurement control circuit is made up of two monostable triggers (1), step-by-step counting code translator (2), delay circuit (3), six path analoging switch (4), anti-phase buffering driver (5) and relay (6); Wherein two monostable single-shot devices (1), step-by-step counting/code translator (2), delay circuit (3), six tunnel of touching simulate electronic switch (4) serial connection and add phase inverter with measured device CMOS4007 pair of complementary pairs and be connected; Two monostable triggers (1), anti-phase/buffering driver (5), relay (6) serial connection add phase inverter with the two complementary pairs of measured device CMOS4007 and are connected; With shaping, counting/decoding, time-delay, control electronic switch and the miniature sensitive inductive relay of finishing external measurement starting impulse six tested N ditch metal-oxide-semiconductor pin states are switched.

3, star according to claim 1 CMOS radiation effect detector, it is characterized in that, this detector adopts the starting voltage of constant current injection method measuring N ditch metal-oxide-semiconductor, constant current is provided by constant-current source circuit (7), the switching of sensitive microrelay (6) control constant current, the source electrode of constant current source and measured tube is connected, 10 μ A electric currents inject measured tube, make tested N sewer pipe enter into starting voltage by irradiation positive bias state and measure state, the source voltage that links to each other with constant current source is the negative value of tested N sewer pipe starting voltage.

4, star according to claim 1 CMOS radiation effect detector is characterized in that, voltage output interface circuit (8) is that 1403 reference voltage source and catching diode are formed by totalizer, model; By voltage output interface circuit (8) starting voltage that detects is simulated the output area that signal is adjusted into 0-5V, the actual threshold voltage measurement range be-2.50V extremely+2.50V.

5, star according to claim 2 CMOS radiation effect detector, it is characterized in that, this detector measurement control circuit adopts the mode of automatically reseting that powers on, and constitutes the power-on reset signal circuit by 1/2 pair of monostable trigger (1), RC circuit, two inverter buffer (5).

6, star according to claim 2 CMOS radiation effect detector, it is characterized in that, this detector control circuit has adopted eight step-by-step counting decoding schemes, whenever receive that is measured a starting impulse, only finish measurement to a N ditch metal-oxide-semiconductor starting voltage, after receiving the 6th measurement starting impulse, promptly finished detection successively to 6 metal-oxide-semiconductors, when receiving the 7th, 8 measurement starting impulse, sky is put in corresponding code translator output, this detector is output as disarmed state, and output voltage is 5.00V.

7, star according to claim 1 CMOS radiation effect detector, it is characterized in that, this detector circuit has adopted anti-locking design measure, to equipment three-way power+12V ,-12V ,+output terminal of 5V all adopted the resistance current limliting, the power of current-limiting protection circuit element and withstand voltage derate are used the components and parts of amount greater than protected circuit; Current limliting intensity :+12V end is 40mA;-12V ,+the 5V end is 10mA; Amplifier on the voltage output is used positive and negative dual power supply, and output level has been carried out clamp; All suspension input port ground connection of circuit or meet 12V; In relay line bag two ends protection in parallel diode and the resistance in series that the CMOS inverter buffer drives, form the holding circuit of anti-reverse pulse.