CN1259733C - Producing method for organic LEDs - Google Patents
Producing method for organic LEDs Download PDFInfo
- Publication number
- CN1259733C CN1259733C CN02127332.4A CN02127332A CN1259733C CN 1259733 C CN1259733 C CN 1259733C CN 02127332 A CN02127332 A CN 02127332A CN 1259733 C CN1259733 C CN 1259733C
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- Prior art keywords
- layer
- emitting diode
- organic light
- protective layer
- light emitting
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- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims description 70
- 239000010410 layer Substances 0.000 claims description 67
- 230000008569 process Effects 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention discloses a method for manufacturing an organic light emitting diode, which comprises the following procedures: firstly, a basal plate is provided, wherein a plurality of thin-film transistors in array arrangement are formed on the basal plate, each thin-film transistor comprises a grid electrode, a signal channel layer, a source electrode and a drain electrode; secondly, a first insulating layer formed above the basal plate covers the thin-film transistors; thirdly, a second insulating layer is formed on the first insulating layer, and an opening penetrating the first insulating layer and the second insulating layer is formed and exposed to the drain electrode; fourthly, an anode layer is formed to cover the second insulating layer and the drain electrode. Finally, a light emitting layer and a cathode layer are orderly formed above the basal plate.
Description
Technical field
The present invention relates to the manufacture method of a kind of organic light-emitting diode element (OLED), and be particularly related to a kind of manufacture method that prevents active organic light-emitting diode element (Active Matrix OLED) generation electric leakage.
Background technology
Organic Light Emitting Diode is a kind of semiconductor element that converts electric energy to luminous energy and have high conversion efficiency, and common purposes is light-emitting component of indicator light, display floater and optical read/write head or the like.Because organic light-emitting diode element possesses some characteristics, as no visual angle, technology simply, low cost, high response speed, serviceability temperature is in extensive range and full-colorization etc., meets the requirement of multimedia era display characteristics, has become the upsurge of research in recent years.
Existing active organic light-emitting diode element is also in positive development.As described below about the structure of active organic light-emitting diode itself and manufacture method.
As shown in Figure 1, be a kind of structural profile schematic diagram of active organic light-emitting diode element commonly used.
Please refer to Fig. 1, the manufacture method of known active organic light-emitting diode element at first forms a grid 102 on a substrate 100.Then form a gate insulator 104 on substrate 100 and the grid 102.And on the gate insulator above the grid 102 104, form a channel layer 106.Afterwards, on channel layer 106, form one source pole 108a/ drain electrode 108b, to constitute a thin-film transistor.
And then, above substrate 100, form a protective layer 110, cover thin-film transistor.Afterwards, in protective layer 110, form an opening 112, and expose drain electrode 108b.Afterwards, on protective layer 110, form anode layers 114 again, and anode layer 114 and drain electrode 108b are electrically connected with part opening 112 inside.Afterwards, above substrate 100, form a luminescent layer 116 and a cathode layer 118 in regular turn.So, promptly finish the making of an active organic light-emitting diode.
Yet, the top that covers thin-film transistor and anode layer 114 that the cathode layer 118 of common active organic light-emitting diode can be comprehensive.Then only pass through protective layer 110 and electrical isolation between thin-film transistor and the cathode layer 118.Please refer to Fig. 2, it is corresponding source/drain 108a/108b, protective layer 110, organic layer 116 and cathode layer 118 parts that are formed with thin-film transistor among Fig. 1.In above-mentioned step,, will make the small hole (Pin Hole) of generation in the formed protective layer 110 if when in the process of deposition protective layer 110, having particulate (Particle), defective (defect) or electric arc (Arcing) to produce.In addition, when the source electrode 108a/ drain electrode 108b that forms thin-film transistor is to use aluminum metal, also will make follow-up formed above it protective layer 110 produce small hole because of the not mild profile (Hill Lock) of source electrode 108a/ drain electrode 108b.And this small hole just can form a leakage path (Leakage Path) 120 between source electrode 108a/ drain electrode 108b and cathode layer 118, causes the quality of element to reduce.
Summary of the invention
Purpose of the present invention is exactly the manufacture method that is to provide a kind of Organic Light Emitting Diode, runs through protective layer and causes electric leakage with the defective of avoiding being produced when depositing protective layer.
The present invention proposes a kind of manufacture method of Organic Light Emitting Diode; the method is that a substrate at first is provided; wherein be formed with several thin-film transistors that are arrayed, a protective layer and an anode layer corresponding on the substrate, and each thin-film transistor comprises and is formed with a grid, a channel layer, one source pole and a drain electrode with each thin-film transistor.Wherein anode layer is to electrically connect with this drain electrode, and this protective layer shoe covers those thin-film transistors.In the process that forms protective layer, be above substrate, to form one first protective layer earlier, cover thin-film transistor.And then, carry out one first cleaning process, remove with the particulate that will be attached on first protective layer.Continue it, on first protective layer, form one second protective layer, and carry out one second cleaning process, remove with the particulate that will be attached on second protective layer.Wherein, by first protective layer and second protective layer and electrical isolation, and the leakage path of first protective layer and second protective layer is blocked through twice deposition process and cleaning process between thin-film transistor and the follow-up formed cathode layer.On anode layer, form a luminescent layer afterwards, and on luminescent layer, form a cathode layer, to finish the making of an active organic light-emitting diode.
The manufacture method of Organic Light Emitting Diode of the present invention, it utilizes repeatedly the method for depositing insulating layer, and adds the collocation of cleaning process, and therefore the effective leakage path between transistorized source/drain of blocking thin film and the cathode layer leaks electricity so as to preventing.
Description of drawings
For purpose of the present invention, feature and advantage can be become apparent, conjunction with figs. hereinafter elaborates:
Fig. 1 is a kind of structural profile schematic diagram of active organic light-emitting diode element commonly used;
Fig. 2 is that known active organic light-emitting diode element produces the electric leakage schematic diagram in protective layer;
Fig. 3 is that the active organic light-emitting diode element that prevents of a preferred embodiment of the present invention produces the electric leakage schematic diagram;
Fig. 4 is the structural profile schematic diagram of the another kind of active organic light-emitting diode element of using always;
Fig. 5 is the photo that the known active organic light-emitting diode element of test forms leakage path;
Fig. 6 is that test utilizes the prepared active organic light-emitting diode element of a preferred embodiment of the present invention to form the photo of leakage path.
The figure acceptance of the bid is kept the score and is not:
100,200: substrate
102,202: grid structure
104,204: gate insulator
106,206: channel layer
108a/108b, 208a/208b: source/drain
110,210: protective layer
112: opening
114,214: anode layer
116,216: organic layer
118,218: cathode layer
120,122,124-leakage path
Embodiment
As shown in Figure 1, be a kind of structural profile schematic diagram of active organic light-emitting diode element commonly used; As shown in Figure 3, be the schematic diagram that prevents active organic light-emitting diode element generation electric leakage of a preferred embodiment of the present invention.
Please refer to Fig. 1, the manufacture method of Organic Light Emitting Diode of the present invention at first forms a first patterning conducting layer 102 on a substrate 100, use as a grid.Wherein the material of grid 102 for example is the chromium metal.Afterwards, on substrate 100 and grid 102, form a gate insulator 104.Wherein the material of gate insulator 104 for example is silicon nitride or silica.Then, on the gate insulator above the grid 102 104, form a channel layer 106.Wherein, the material of channel layer 106 for example is an amorphous silicon.And then, on channel layer 106, form the second conductive layer 108a/108b of a patterning, as a drain/source.Wherein, the material of second conductive layer for example is an aluminum metal.To constitute a thin-film transistor structure.
Afterwards, above substrate 100, form a protective layer 110, cover thin-film transistor.Wherein, the method for formation protective layer 110 of the present invention is features of the present invention, and it is described in detail as follows.
Please refer to Fig. 3, is corresponding to the source electrode 108a/ drain electrode 108b, protective layer 110, organic layer 116 and cathode layer 118 parts that are formed with thin-film transistor among Fig. 1.In the present invention, protective layer 110 is made of the protective layer more than at least two layers.In other words, protective layer 110 is via deposition process repeatedly and form.In the present embodiment, be that example is to describe in detail to form two-layer protective layer 110a, 110b.
At first, above substrate 100, form ground floor protective layer 110a, cover thin-film transistor.Afterwards, the particulate that is not deposited process environment in order to ensure the surface of the formed first protective layer 110a is accompanying, therefore after forming the first protective layer 110a, just and then carries out a cleaning process is attached to the first protective layer 110a surface with removal particulate.Wherein, this cleaning process for example is a water under high pressure cleaning process or a ultrasonic waves for cleaning process.Afterwards, on the first protective layer 110a, form one second protective layer 110b, and after forming the second protective layer 110b, also then carry out a cleaning process, be attached to particulate on the second protective layer 110b with removing.And this cleaning process also can be a water under high pressure cleaning process or a ultrasonic waves for cleaning process.And the formed first protective layer 110a and the second protective layer 110b be jointly as the protective layer of thin-film transistor, and make thin-film transistor and follow-up formed cathode layer electrical isolation.In the present embodiment, the material of the first protective layer 110a and the second protective layer 110b for example is a silicon nitride, and its thickness is respectively between 1000 dust to 5000 dusts.In the present invention, the first protective layer 110a can be identical or inequality with the thickness of the second protective layer 110b.
Because protective layer 110a of the present invention, 11ob are formed by twice deposition process respectively.Therefore, when causing leakage path 122,124 when formed particulate, defective or arc phenomenon in the deposition process, just can thereby block leakage path 122,124 and directly be through to the source electrode 108a/ of lower floor drain electrode 108b by upper strata cathode layer 118 because of the former of deposition step repeatedly.
Afterwards, in protective layer 110a, 110b, form an opening 112 pierce through the protection layer 110a, 110b, expose drain electrode 108b.Then, form an anode layer 114 protective mulch 110a, 110b and insert opening 112, and cover drain electrode 108b.Wherein, the material of anode layer 114 for example is an indium tin oxide.Afterwards, above substrate 100, form a luminescent layer 116, cover anode layer 114.Wherein, the material of luminescent layer 116 for example is the organic substance compound with characteristics of luminescence.Afterwards, on organic layer 116, form a cathode layer 118 again, to finish the making of an active organic light-emitting diode.
The active organic light-emitting diode that prevents of the present invention produces the method for electric leakage, can be applicable on the active organic light-emitting diode element of any form structure.That can give an example has the organic light-emitting diode element of ITO at middle (1TO on Middle).The active organic light-emitting diode element of this kind structure as shown in Figure 4.
Please refer to Fig. 4, the manufacture method of this active organic light-emitting diode is at first to form several to be array and to bury the thin-film transistor of row and an anode layer 214 corresponding with each thin-film transistor on a substrate 200, wherein each thin-film transistor comprises a grid 202, a gate insulator 204, a channel layer 206, one source pole 208a and a drain electrode 208b, and anode layer 214 electrically connects with drain electrode 208b.Then, above substrate 200, form a protective layer 210, cover thin-film transistor.Wherein, protective layer 210 is by the formed multi-protective layer structure of deposition process repeatedly.And, after each protective layer forms, all can continue and tightly carry out a cleaning process, remove with the particulate that will be attached to the protective layer surface.And be electrical isolation by protective layer 210 between thin-film transistor and the follow-up formed cathode layer, and the leakage path in the protective layer 210 is through repeatedly deposition and cleaning process and block.Afterwards, forming a luminescent layer 216 on the protective layer 210 with on the anode layer 214 again, and on luminescent layer 216, forming a cathode layer 218, to finish the making of an active organic light-emitting diode.
As shown in Figure 5, be the photo that the known active organic light-emitting diode element of test forms leakage path; As shown in Figure 6, be the photo that test active organic light-emitting diode element of the present invention forms leakage path.
Please refer to Fig. 5, the active organic light-emitting diode element of Fig. 5, its protective layer are the thickness that forms about 6500 dusts with the primary depositing process, with the protective film transistor and make thin-film transistor and the cathode layer electrical isolation of active organic light-emitting diode element.Whether have leakage path to produce in the protective layer in order to test, present embodiment is element to be soaked in 15% potassium hydroxide (KOH) solution, with the quantity that whether defectiveness forms and inspects the micropore hole in the check protection layer.By can seeing among Fig. 5, the subregion just produces the image that local black patch is arranged because of source/drain (aluminum metal) reaction of the OH-invasion of potassium hydroxide solution and thin-film transistor.Here it is because there is the micropore hole to form in the protective layer, so the potassium hydroxide solution porous reacts with metal level to the protective layer below.
In addition; please refer to Fig. 6; the active organic light-emitting diode element of Fig. 6; its protective layer is the protective layer that forms about 3000 dusts (totally 6000 dusts) thickness with the secondary deposition process respectively, with the protective film transistor and make thin-film transistor and the cathode layer electrical isolation of active organic light-emitting diode element.For whether the test protective layer has leakage path to produce, present embodiment is element to be soaked in 15% potassium hydroxide (KOH) solution, with the quantity that whether defectiveness forms and inspects the micropore hole in the check protection layer.In Fig. 6, and but the black patch image generation among Fig. 5.This result represent the OH-that utilizes method of the present invention can effectively block potassium hydroxide solution invade to thin-film transistor source/drain (aluminum metal) and with its reaction.In other words, utilize method of the present invention can effectively block the cathode layer of active organic light-emitting diode element and the leakage path between the thin-film transistor.
The active organic light-emitting diode element that prevents of the present invention produces the method for electric leakage; be to utilize repeatedly to deposit to form the method for sandwich construction protective layer; and add the collocation of cleaning process; with the leakage current path between transistorized source/drain of effective blocking thin film and the cathode layer; so, just, can prevent electric leakage.
The present invention not only can be applicable on the active organic light-emitting diode element, and the present invention also can be applicable to the insulating barrier of other element, so as to the vertical leakage path between two conducting elements about the blocking insulation layer.
Though the present invention is with preferred embodiment openly as above, it is not in order to qualification the present invention, any personnel that are familiar with this technology, and without departing from the spirit and scope of the present invention, change of being done and retouching all do not break away from protection scope of the present invention.
Claims (8)
1, a kind of manufacture method of Organic Light Emitting Diode, its step comprises: a substrate is provided, a plurality of thin-film transistor, a protective layer and anode layers corresponding that are arrayed wherein have been formed with on this substrate with each those thin-film transistor, and each those thin-film transistor comprises and is formed with a grid, a channel layer, one source pole and a drain electrode, and this anode layer is to electrically connect with this drain electrode, and this protective layer shoe covers those thin-film transistors, is forming a luminescent layer on this anode layer and form a cathode layer on this luminescent layer afterwards;
It is characterized in that: the method that forms this protective layer is to form one first insulating barrier earlier; then this first insulating barrier is carried out one first cleaning process; on this first insulating barrier, form one second insulating barrier again, then again this second insulating barrier is carried out one second cleaning process.
2. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: this protective layer has an opening that penetrates this protective layer and expose this drain electrode, and this anode layer is to cover this protective layer and this drain electrode.
3. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: this first insulating barrier is identical with the material of this second insulating barrier.
4. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: this first cleaning process is a water under high pressure cleaning process or a ultrasonic waves for cleaning process, second cleaning process is a water under high pressure cleaning process or a ultrasonic waves for cleaning process.
5. the manufacture method of Organic Light Emitting Diode according to claim 1 is characterized in that, the material of this first insulating barrier and this second insulating barrier comprises silicon nitride, and its thickness is respectively 1000 dust to 5000 dusts.
6. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: the material of this source/drain comprises aluminum metal.
7. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: the material of this anode layer comprises indium tin oxide.
8. the manufacture method of Organic Light Emitting Diode according to claim 1, it is characterized in that: the material of this luminescent layer comprises the organic compound with characteristics of luminescence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02127332.4A CN1259733C (en) | 2002-08-02 | 2002-08-02 | Producing method for organic LEDs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02127332.4A CN1259733C (en) | 2002-08-02 | 2002-08-02 | Producing method for organic LEDs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1472824A CN1472824A (en) | 2004-02-04 |
| CN1259733C true CN1259733C (en) | 2006-06-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02127332.4A Expired - Lifetime CN1259733C (en) | 2002-08-02 | 2002-08-02 | Producing method for organic LEDs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1259733C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7915059B2 (en) | 2007-05-11 | 2011-03-29 | Chimei Innolux Corporation | Method for fabricating organic light emitting diode with fluorine-ion-doped electrode |
| US11853191B2 (en) | 2017-03-31 | 2023-12-26 | Commvault Systems, Inc. | Management of internet of things devices |
-
2002
- 2002-08-02 CN CN02127332.4A patent/CN1259733C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7915059B2 (en) | 2007-05-11 | 2011-03-29 | Chimei Innolux Corporation | Method for fabricating organic light emitting diode with fluorine-ion-doped electrode |
| US11853191B2 (en) | 2017-03-31 | 2023-12-26 | Commvault Systems, Inc. | Management of internet of things devices |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1472824A (en) | 2004-02-04 |
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