CN1882208A - Organic electroluminescence display with top lighting structure - Google Patents
Organic electroluminescence display with top lighting structure Download PDFInfo
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- CN1882208A CN1882208A CN 200510077204 CN200510077204A CN1882208A CN 1882208 A CN1882208 A CN 1882208A CN 200510077204 CN200510077204 CN 200510077204 CN 200510077204 A CN200510077204 A CN 200510077204A CN 1882208 A CN1882208 A CN 1882208A
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Abstract
The invention relates to an organic electroluminescent display with top lighting structure, wherein said device comprises a base plate from up to down, an insulated area, an cathode layer above the base plate and the insulated area with well side surface, an insulated layer above the insulated area and cathode layer, an OLED lighting multilayer structure above said all structures and an anode layer; the insulated area and the base plate have one preset angle to make the cathode layer own one well side surface with preset angle; the light from the OLED lighting multilayer structure can be reflected from the cathode layer with well side surface, therefore, it can obtain better upwards lighting efficiency and avoid full-reflection; and the organic electroluminescent display can arrange the transparent cathode above all structures, and arranged reflective metal layer under the transparent anode to improve the lighting efficiency.
Description
Technical field
The present invention relates to a kind of display of organic electroluminescence, particularly relate to a kind of display of organic electroluminescence, can avoid the total reflection problem to promote upwards luminous efficiency with top lighting structure.
Background technology
Along with popularizing of portable electronic product such as mobile phone, digital camera or personal digital assistant, the performance of flat-panel screens (FPD) also becomes more and more important.Flat-panel screens mainly comprises LCD (LCD), plasma display panel and display of organic electroluminescence etc., the LCD of comparatively popularizing can be not luminous because of liquid crystal itself at present, need install backlight additional, and on bulking value and the cost adverse influence being arranged.
Kodak at first delivered Organic Light Emitting Diode (OLED) in 1987, injected organic small molecule material between two plate electrodes; Thereafter univ cambridge uk delivers polymer LED (PLED) nineteen ninety, and in recent ten years, because the positive research and development of each manufacturer, so the material of organic luminous layer, characteristic and correlation technique all have significantly and break through.Because the organic electroluminescence display has the advantage of self-luminous, big operating temperature range and wide viewing angle, therefore be expected to become the flat-panel screens of main flow.
Fig. 1 is the cutaway view of a traditional bottom-emission (Bottom emission) Organic Light Emitting Diode assembly 10, this Organic Light Emitting Diode assembly 10 mainly comprise a glass substrate 100, the anode pattern layer 120 that becomes predetermined pattern on the glass substrate 100, mainly the luminous sandwich construction 140 of the OLED on the anode pattern layer 120, the cathode layer on the OLED luminescent layer 140 122, and between anode pattern layer 120 as the insulation layer 160 of isolated usefulness.Wherein the luminous sandwich construction 140 of OLED comprises from bottom to top electric cave transport layer (HTL) 142, luminous material layer (EML) 144 and electron transfer layer (ETL) 146.After feeding electric currents via anode pattern layer 120 and cathode layer 122, electronics electricity cave respectively via electron transfer layer (ETL) 146 and electric cave transport layer (HTL) 142 at luminous material layer (EML) 144 in conjunction with luminous.In order to define the pixel area and to avoid short circuit problem between each pixel, between anode pattern layer 120, form insulation layer 160.Yet,, therefore can influence the aperture opening ratio of Organic Light Emitting Diode assembly 10 owing to be to form initiatively or passive drive circuit in emission side (downside) at above-mentioned traditional bottom-emission Organic Light Emitting Diode assembly 10.
Fig. 2 A is the vertical view of another traditional Organic Light Emitting Diode assembly 10 (the Japan Patent JP No.10-106751 of NEC), and Fig. 2 B be among Fig. 2 A Organic Light Emitting Diode assembly 10 along the end view of line 2B-2B.Therefore this Organic Light Emitting Diode assembly 10 and the close assembly that has shown in Figure 1 use similar assembly numbering, respectively have a bonding jumper 180 in the both sides of anode pattern layer 120, to reduce the impedance of anode pattern layer 120.Shown in Fig. 2 A, this bonding jumper 180 is parallel strip and distributes in Organic Light Emitting Diode assembly 10.Because anode pattern layer 120 uses the higher material of work function (work function) to produce efficient to improve electric cave usually, as using tin indium oxide (ITO) material, therefore can have bigger impedance, influences luminous efficiency.Bonding jumper 180 can use the work function material little than anode pattern layer 120, to reduce the overall impedance of anode, improves luminous efficiency.
Fig. 3 A is the vertical view of the Taiwan patent No. 228382 " organic planar luminescent display device and processing procedure thereof " of the same applicant of this case Youjing Science and Technology Co Ltd, and Fig. 3 B be among Fig. 3 A Organic Light Emitting Diode assembly 10 along the end view of line 3B-3B.This patent is used the plain conductor zone (PDRRM) that is distributed in around the picture element, therefore can be in the picture element zone around injection current, to increase luminous efficiency and to make its luminous efficiency even.
U.S. Patent No. 5247190 discloses a kind of Organic Light Emitting Diode modular construction and material that top light emitting (Top emission) can be provided, but this patent does not provide solution total reflection problem and makes luminous efficiency and the optimized mechanism of contrast.Referring to Fig. 9, Applied physics letters discloses a kind of Organic Light Emitting Diode assembly that is used for top light emitting (Top emission) on April 21st, 2003 (PP.2715), this Organic Light Emitting Diode assembly comprises luminous sandwich construction 907 of transparency carrier 901, aluminium 903, ito anode 905, OLED and transparent cathode layer 911 from the bottom to top, yet this Organic Light Emitting Diode assembly does not provide solution total reflection problem yet and makes luminous efficiency and the optimized mechanism of contrast.
Summary of the invention
Therefore the object of the present invention is to provide a display of organic electroluminescence with top lighting structure, the luminous efficiency deterioration that this display of organic electroluminescence can avoid total reflection to cause, and can increase light source purity and GTG efficient.
For realizing above-mentioned purpose of the present invention, the invention provides a kind of display of organic electroluminescence, comprise a substrate from the bottom to top, be the insulation layer that the array shape distributes, be positioned on substrate and the insulation layer and have the cathode layer of well shape side, be positioned at the insulating barrier on insulation layer and the cathode layer, be positioned at luminous sandwich construction of OLED and anode layer on the resulting structures.Wherein this insulation layer and substrate have a predetermined angle, make the cathode layer that forms on insulation layer have the well shape side of a predetermined angle.The cathode layer with well shape side that the light of launching from the luminous sandwich construction of OLED can be positioned under it reflects, therefore preferable upwards luminous efficiency is arranged and avoid the total reflection problem, the angle that should be scheduled to can be looked design requirement and change, and for example can be 90 degree angles.
Because this display of organic electroluminescence with top lighting structure adopts top lighting structure, therefore substrate can be any smooth printing opacity/light tight, soft/hard substrate, can make the direct film forming of this organic electroluminescent part on TFT, to promote the display of organic electroluminescence aperture opening ratio.Moreover can on resulting structures, add a cloudy surface light polarizing film, to increase the visual angle.
For realizing above-mentioned purpose of the present invention, the invention provides a kind of display of organic electroluminescence manufacture method, comprise the following step: prepare a substrate; Make some insulation layers on substrate, wherein this insulation layer and substrate have a predetermined angle; On resulting structures, make cathode layer; On resulting structures, make insulating barrier; On resulting structures, make the luminous sandwich construction of OLED; Reach and on resulting structures, make anode layer.
Wherein the some insulation layer steps of this making comprise coating polyimides materials such as (Polyimide) earlier, utilize micro-photographing process again, make insulation layer.This is made some insulation layer steps and can also utilize micro image etching procedure to make insulation layer again with modes such as PVD, CVD grow up silica (SiOx), silicon nitride (SiNx), silicon oxynitride inoranic membranes such as (SiOxNy).This making insulating barrier step comprises coating polyimides materials such as (Polyimide) earlier in addition, utilizes micro-photographing process to make insulating barrier again.
Description of drawings
Fig. 1 is the end view of a traditional bottom-emission (Bottom emission) Organic Light Emitting Diode assembly.
Fig. 2 A is the vertical view of another traditional Organic Light Emitting Diode assembly.
Fig. 2 B is the end view along Fig. 2 A center line 2B-2B.
Fig. 3 A is the vertical view of another traditional Organic Light Emitting Diode assembly.
Fig. 3 B is the end view along Fig. 3 A center line 3B-3B.
Fig. 4 A is the vertical view according to the display of organic electroluminescence of the specific embodiment of the invention.
Fig. 4 B is the end view along Fig. 4 A center line 4B-4B.
Fig. 5 A to Fig. 5 F illustrates the organic electroluminescent part manufacture method according to specific embodiments of the invention.
Fig. 6 is the end view according to the display of organic electroluminescence of another specific embodiment of the present invention.
Fig. 7 illustrates the display of organic electroluminescence with top lighting structure according to another specific embodiment of the present invention.
Fig. 8 A to Fig. 8 G is a flow chart of making display of organic electroluminescence according to another specific embodiment of the present invention.
Fig. 9 is the end view of another traditional Organic Light Emitting Diode assembly.
Embodiment
Reach technology, means and the effect that predetermined purpose is taked in order to make the auditor can further understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Fig. 4 A is the vertical view according to the display of organic electroluminescence 30 with high-luminous-efficiency and high gray contrast of instantiation of the present invention, Fig. 4 B then is the end view along Fig. 4 A center line 4B-4B, this display of organic electroluminescence 30 comprises a substrate 300 from the bottom to top, be the insulation layer 360 that the array shape distributes, be positioned on substrate 300 and the insulation layer 360 and have the cathode layer 322 of well shape side, mainly be positioned at the insulating barrier 350 on insulation layer 360 and the cathode layer 322, and be positioned at luminous sandwich construction 340 of OLED and anode layer 320 on the resulting structures.Wherein this insulation layer and substrate have a predetermined angle theta, make the cathode layer that forms on insulation layer have the well shape side of a predetermined angle.Again referring to Fig. 4 B, the cathode layer 322 that the light that is sent from the luminous sandwich construction 340 of OLED can be had well shape side reflects, and therefore can avoid the total reflection problem, increases the luminous efficiency of this display of organic electroluminescence 30.
The luminous sandwich construction 340 of OLED that the luminous sandwich construction 340 of this OLED can be a multicolour, as the luminous sandwich construction 340R of red OLED, luminous sandwich construction 340G of green OLED and the luminous sandwich construction 340B of blue OLED can reach full-color effect.
This has the cathode layer 322 definable picture element light-emitting zones of well shape side, avoid organic light source to around non-display area ease penetrate and lose, and its light source is effectively utilized.When using the luminous sandwich construction 340 of different colours OLED, this cathode layer 322 can increase the readability at light source color purity and GTG efficient and increase visual angle.Moreover this cathode layer 322 can make this display of organic electroluminescence 30 not be subjected to external interference of light sources, can increase its analytic ability to light source.This cathode layer 322 can make source reflection, and then only allows light source to penetrate from transparency electrode display surfaces such as ITO.
In above-mentioned specific embodiment, this insulation layer 360 is insulation materials, for example can be silica (SiOx), silicon nitride (SiNx), silicon oxynitride inoranic membrane materials such as (SiOxNy).This cathode layer 322 can use the material of high perveance and high reflectance to make; For example: material or MULTILAYER COMPOSITE high conductive materials such as gold, silver, aluminium, copper and chromium.This insulating barrier 350 can be silica (SiOx), silicon nitride (SiNx), silicon oxynitride high light transmittance materials such as (SiOxNy), and thickness can be 0.5～5 μ m.This anode layer 320 can be transparent electrode thin films such as ITO, IZO or IWO.
Because display of organic electroluminescence 30 of the present invention is top lighting structures, so substrate 300 can be any smooth printing opacity/light tight, soft/hard substrate.Display of organic electroluminescence 30 of the present invention directly film forming helps to promote aperture opening ratio on thin-film transistor (TFT).
Moreover, because bottom cathode layer 322 is helped to prolong assembly life-span by the luminous sandwich construction 340 of the OLED on upper strata, and anode layer 320 protection.
Fig. 5 A to Fig. 5 F illustrates organic electroluminescent part 30 manufacture methods according to specific embodiments of the invention, and this method comprises the following step:
Step S500: preparing a substrate 300, for example can be a glass substrate 300, also cleans this glass substrate 300 (Fig. 5 A) with liquid such as cleaning agent or deionized waters in this step.
Step S510: on substrate 300, make some insulation layers 360, for example can be coated with polyimides materials such as (Polyimide) earlier, utilize micro-photographing process again, make insulation layer 360; Or, utilize micro image etching procedure to make insulation layer 360 (Fig. 5 B) again with PVD, the CVD mode inoranic membranes such as SiOx, SiNx, SiOxNy of growing up.
Step S520: on resulting structures, make cathode layer 322, can use processing procedure growth metallic films such as sputter, evaporation, electron beam or plating earlier, utilize micro image etching procedure again, make metallic cathode layer 322 pattern (Fig. 5 C).
Step S530: on resulting structures, make insulating barrier 350, can be coated with polyimides materials such as (Polyimide) earlier, utilize micro-photographing process again, make insulating barrier 350; Or utilizing method growth inoranic membrane such as high light transmittance materials such as SiOx, SiNx, SiOxNy such as PVD, CVD, thickness is about 0.5～5 μ m, utilizes micro image etching procedure again, makes insulating barrier 350 (Fig. 5 D).
Step S540: on resulting structures, make the luminous sandwich construction 340 of OLED, for example can be with the evaporation mode luminous sandwich construction 340 of OLED (Fig. 5 E) of growing up.
Step S550: on resulting structures, make anode layer 320, the transparent electrode thin films (Fig. 5 F) such as ITO, IZO or IWO of can growing up with modes such as sputters.
Referring to Fig. 6, wherein this insulation layer and substrate have a predetermined angle theta, make the cathode layer that forms on insulation layer have the well shape side of a predetermined angle, and the angle that should be scheduled to can be looked design requirement and change, for example can be 90 degree angles, with effective reduction total reflection.Moreover can on resulting structures, add a cloudy surface light polarizing film (not shown), to increase the visual angle.
Figure 7 shows that the ORGANIC ELECTROLUMINESCENCE DISPLAYS with top lighting structure 30 according to another specific embodiment of the present invention '.As shown in Figure 7, from the bottom to top a substrate 300 of this display of organic electroluminescence 30 ' have ', be the insulation layer 360 that the array shape distributes ', be positioned at insulation layer 360 ' on reflective metal layer 370 ', be positioned at reflective metal layer 370 ' on and the anode layer 320 of the insulation layer 360 that distributed by the array shape ' separate ', be positioned at anode layer 320 ' on and mainly be distributed in insulation layer 360 ' on insulating barrier 350 ', be positioned at anode layer 320 ' and insulating barrier 350 ' on the luminous sandwich construction 340 of OLED ' and be positioned at transparent cathode 322 on the total '.
Wherein reflective metal layer 370 ' be adopts the metal material with high reflectance, for example can adopt metal materials such as silver.This transparent cathode 322 ' can adopt to have the high-penetrability metal material for example can adopt metal materials such as aluminium, silver.And substrate 300 ', insulation layer 360 ', anode layer 320 ', insulating barrier 350 ', and the luminous sandwich construction 340 of OLED ' can adopt and the similar material of corresponding assembly shown in Fig. 4 B.
Fig. 8 A to Fig. 8 G be according to another specific embodiment of the present invention make display of organic electroluminescence 30 ' flow chart.
Step S800: prepare a substrate 300 ', for example can be a glass substrate 300 ', also clean this glass substrate 300 ' (Fig. 8 A) in this step with liquid such as cleaning agent or deionized waters.
Step S810: substrate 300 ' on make some insulation layers 360 ', for example can be coated with polyimides materials such as (Polyimide) earlier, utilize micro-photographing process again, make insulation layer 360 '; Or, utilize micro image etching procedure to make insulation layer 360 ' (Fig. 8 B) again with PVD, the CVD mode inoranic membranes such as SiOx, SiNx, SiOxNy of growing up.
Step S820: utilize processing procedure growth metallic films such as sputter, evaporation, electron beam or plating, utilize micro image etching procedure again, make reflective metal layer 370 ' pattern, material can be silver or other highly reflective metal material (Fig. 8 C).
Step S830: making anode layer 320 on resulting structures ', the transparent electrode thin films such as ITO, IZO or IWO of can growing up with modes such as sputters utilize micro image etching procedure again, make anode layer 320 ' (Fig. 8 D).
Step S840: making insulating barrier 350 on resulting structures ', can be coated with polyimides materials such as (Polyimide) earlier, utilize micro-photographing process again, making insulating barrier 350 '; Or utilizing method growth inoranic membrane such as high light transmittance materials such as SiOx, SiNx, SiOxNy such as PVD, CVD, thickness is about 0.5～5 μ m, utilizes micro image etching procedure again, makes insulating barrier 350 ' (Fig. 8 E).
Step S850: on resulting structures, make the luminous sandwich construction 340 of OLED ', for example can be with the evaporation mode luminous sandwich construction 340 of OLED ' (Fig. 8 F) that grow up.
Step S860: making transparent cathode 322 on resulting structures ', depositing metal films: utilize processing procedure growth light-permeable metallic films such as sputter, evaporation, electron beam or plating, utilize micro image etching procedure again, make transparent cathode 322 ' pattern, material can be aluminium, silver or other high-penetrability metal material (Fig. 8 G).
Therefore, the present invention is the above-mentioned disclosed technology of energy mat really, provides a kind of far different in traditional design, can improve whole use value, and be not published in publication or public use before its application,, propose application for a patent for invention in accordance with the law so met the important document of patent of invention.
But, above-mentioned disclosed accompanying drawing, explanation, only be embodiments of the invention, one of ordinary skill in the art can be made other all improvement according to above-mentioned explanation, and these changes still belong in invention spirit of the present invention and the following claim that is defined.
Claims (31)
1. display of organic electroluminescence comprises from the bottom to top:
One substrate;
Be the insulation layer that the array shape distributes, and each insulation layer has an angle of being scheduled to substrate;
Be positioned on substrate and the insulation layer and have the cathode layer of well shape side; And
Be positioned at luminous sandwich construction of OLED and anode layer on the resulting structures.
2. display of organic electroluminescence as claimed in claim 1, wherein this substrate is a glass substrate.
3. display of organic electroluminescence as claimed in claim 1, wherein this insulation layer is silica (SiOx), silicon nitride (SiNx), silicon oxynitride inoranic membrane materials such as (SiOxNy).
4. display of organic electroluminescence as claimed in claim 1, wherein this cathode layer uses the material of high perveance and high reflectance.
5. display of organic electroluminescence as claimed in claim 4, wherein this cathode layer is material or MULTILAYER COMPOSITE high conductive materials such as gold, silver, aluminium, copper and chromium.
6. display of organic electroluminescence as claimed in claim 1, wherein this insulating barrier is silica (SiOx), silicon nitride (SiNx), silicon oxynitride high light transmittance materials such as (SiOxNy).
7. display of organic electroluminescence as claimed in claim 1, wherein this thickness of insulating layer can be 0.5 μ m～5 μ m.
8. display of organic electroluminescence as claimed in claim 1, wherein this anode layer can be transparent electrode thin films such as ITO, IZO or IWO.
9. display of organic electroluminescence as claimed in claim 1, wherein this substrate can be any smooth printing opacity/light tight, soft/hard substrate.
10. display of organic electroluminescence as claimed in claim 1 should predetermined angle be 90 degree angles wherein.
11. display of organic electroluminescence as claimed in claim 1 also is included in the cloudy surface light polarizing film on the resulting structures.
12. a display of organic electroluminescence manufacture method comprises the following step;
Prepare a substrate;
On substrate, make some insulation layers, and each insulation layer has an angle of being scheduled to substrate;
On resulting structures, make cathode layer;
On resulting structures, make insulating barrier;
On resulting structures, make the luminous sandwich construction of OLED;
On resulting structures, make anode layer.
13. display of organic electroluminescence manufacture method as claimed in claim 12, wherein the some insulation layer steps of this making comprise:
Coating polyimides materials such as (Polyimide) utilizes micro-photographing process to make insulation layer more earlier.
14. display of organic electroluminescence manufacture method as claimed in claim 12, wherein the some insulation layer steps of this making comprise:
With PVD, CVD mode grow up silica (SiOx), silicon nitride (SiNx), silicon oxynitride inoranic membranes such as (SiOxNy); And
Utilize micro image etching procedure to make insulation layer.
15. display of organic electroluminescence manufacture method as claimed in claim 12, wherein this making cathode layer step comprises:
Earlier with processing procedure growth metallic films such as sputter, evaporation, electron beam or plating; And
Utilize micro image etching procedure to make the metallic cathode layer pattern.
16. display of organic electroluminescence manufacture method as claimed in claim 12, wherein this making insulating barrier step comprises:
Coating polyimides materials such as (Polyimide) reaches earlier
Utilize micro-photographing process to make insulating barrier.
17. display of organic electroluminescence manufacture method as claimed in claim 12, wherein this making insulating barrier step comprises:
Utilize methods such as PVD, CVD to grow up as silica (SiOx), silicon nitride (SiNx), silica high light transmittance materials such as (SiOxNy), thickness is about 0.5～5 μ m; And
Utilize micro image etching procedure, make insulating barrier.
18. display of organic electroluminescence manufacture method as claimed in claim 12, wherein the luminous sandwich construction step of this making OLED is with the evaporation mode luminous sandwich construction of OLED of growing up.
19. display of organic electroluminescence manufacture method as claimed in claim 12, wherein this making anode layer step is the transparent electrode thin films such as ITO, IZO or IWO of growing up with modes such as sputters.
20. display of organic electroluminescence manufacture method as claimed in claim 12, wherein this insulation layer is the structure of squaring up, to form the metallic cathode layer of peupendicular hole shape.
21. display of organic electroluminescence manufacture method as claimed in claim 12 also is included in and adds a cloudy surface light polarizing film on the resulting structures.
22. a display of organic electroluminescence comprises from the bottom to top:
One substrate;
Be positioned on this substrate and be the insulation layer that the array shape distributes;
Be positioned at the reflective metal layer on this insulation layer;
An anode layer that is positioned on this reflective metal layer and is separated by this insulation layer;
Be positioned at the insulating barrier on this anode layer;
Be positioned at the luminous sandwich construction of an OLED on this anode layer and this insulating barrier; And
Be positioned at the transparent cathode on the total.
23. display of organic electroluminescence as claimed in claim 22, wherein this reflective metal layer is the high-reflectivity metal material that comprises silver.
24. display of organic electroluminescence as claimed in claim 22, wherein this transparent cathode layer is the high-penetrability metal material that comprises metals such as silver or aluminium.
25. display of organic electroluminescence as claimed in claim 22 also is included in the cloudy surface light polarizing film on the resulting structures.
26. a display of organic electroluminescence manufacture method comprises the following step:
Prepare a substrate;
Making has the insulation layer of predetermined pattern;
Make a reflective metal layer on resulting structures;
Make a transparent anode layer on resulting structures;
Make an insulating barrier on resulting structures;
Make the luminous sandwich construction of an OLED on resulting structures; And
Make a transparent cathode layer on resulting structures.
27. display of organic electroluminescence manufacture method as claimed in claim 26, wherein this reflective metal layer step is to utilize processing procedure growth metallic films such as sputter, evaporation, electron beam or plating, utilizes micro image etching procedure again, makes the reflective metals layer pattern.
28. display of organic electroluminescence manufacture method as claimed in claim 26, wherein this reflective metal layer is the high-reflectivity metal material that comprises silver.
29. display of organic electroluminescence manufacture method as claimed in claim 26, wherein this transparent cathode making step is to utilize processing procedure growth light-permeable metallic films such as sputter, evaporation, electron beam or plating, utilize micro image etching procedure again, make the transparent cathode pattern.
30. display of organic electroluminescence manufacture method as claimed in claim 26, wherein this transparent cathode material can be aluminium, silver or other high-penetrability metal material.
31. display of organic electroluminescence manufacture method as claimed in claim 26 also comprises:
On resulting structures, form a cloudy surface light polarizing film.
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| CN 200510077204 CN1882208A (en) | 2005-06-16 | 2005-06-16 | Organic electroluminescence display with top lighting structure |
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| CN 200510077204 CN1882208A (en) | 2005-06-16 | 2005-06-16 | Organic electroluminescence display with top lighting structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937285A (en) * | 2010-09-29 | 2011-01-05 | 彩虹集团公司 | Touch panel and display screen integrated OLED display device |
| CN103311449A (en) * | 2012-03-08 | 2013-09-18 | 群康科技(深圳)有限公司 | Display device and production method thereof |
| CN105977390A (en) * | 2015-03-11 | 2016-09-28 | 吴忠帜 | Electroluminescent device |
| US10680208B2 (en) | 2015-03-11 | 2020-06-09 | National Taiwan University | Electroluminescent device and display pixel structure using the same |
-
2005
- 2005-06-16 CN CN 200510077204 patent/CN1882208A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937285A (en) * | 2010-09-29 | 2011-01-05 | 彩虹集团公司 | Touch panel and display screen integrated OLED display device |
| CN101937285B (en) * | 2010-09-29 | 2012-11-28 | 彩虹集团公司 | Touch panel and display screen integrated OLED display device |
| CN103311449A (en) * | 2012-03-08 | 2013-09-18 | 群康科技(深圳)有限公司 | Display device and production method thereof |
| CN103311449B (en) * | 2012-03-08 | 2016-02-24 | 群康科技(深圳)有限公司 | Display unit and manufacture method thereof |
| CN105977390A (en) * | 2015-03-11 | 2016-09-28 | 吴忠帜 | Electroluminescent device |
| CN105977390B (en) * | 2015-03-11 | 2019-01-01 | 吴忠帜 | Electro photo-luminescent apparatus |
| US10483496B2 (en) | 2015-03-11 | 2019-11-19 | National Taiwan University | Electroluminescent devices with improved optical out-coupling efficiencies |
| US10680208B2 (en) | 2015-03-11 | 2020-06-09 | National Taiwan University | Electroluminescent device and display pixel structure using the same |
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