CN1200463C - Organic LED and its making process - Google Patents
Organic LED and its making process Download PDFInfo
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- CN1200463C CN1200463C CNB011107103A CN01110710A CN1200463C CN 1200463 C CN1200463 C CN 1200463C CN B011107103 A CNB011107103 A CN B011107103A CN 01110710 A CN01110710 A CN 01110710A CN 1200463 C CN1200463 C CN 1200463C
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Abstract
The present invention relates to an organic LED and a manufacturing method thereof. The organic LED is supported by a glass base coated with an indium / tin oxide layer. The organic LED comprises an amorphous silicon impedance layer covering the glass base coated with the indium / tin oxide layer, a polyaniline layer covering the amorphous silicon impedance layer, an organic luminous layer coated above a PANI layer and a conductor electrode layer covering above the luminous layer. In a better embodiment, the amorphous silicon impedance layer serves as a current limitation layer and is used for limiting the current density between the glass base coated with the indium / tin oxide layer and the conductor electrode layer below the permissible maximum current density 1000 mA/cm<2>. The organic LED disclosed by the present invention has an inorganic layer which serves as a current limitation layer.
Description
Technical field
The present invention relates to a kind of Organic Light Emitting Diode and manufacture method, particularly a kind of improved film layer structure and make a method that can be applicable to the Organic Light Emitting Diode assembly of flat display apparatus.
Background technology
Because the Organic Light Emitting Diode long term reliability is still not enough, makes the manufacturing of flat display apparatus still suffer from difficulty.For forming an Organic Light Emitting Diode, organic cold light layer of an activation is to be clipped between a transparent anode and the low workfunction metal.Transparent anode is as an indium tin oxide (ITO) layer, and as a hole-emission contact, low workfunction metal is as electronics-emission contact, as the following explanation that is presented among Fig. 1.The organic layer of activation can be a conducting polymer.Yet, because general Organic Light Emitting Diode deficiency in useful life makes Organic Light Emitting Diode be applied in and still suffers from difficulty on the display unit.Because film layer structure is difficult to completely, after organic luminescent assembly uses a limiting time, easily causes display quality to go down and brightness deterioration, will further specify as after.
Figure 1A shows the film layer structure of traditional light-emitting diode.One organic luminous layer 3 is deposited on the substrate of glass 1 that is coated with indium tin oxide (ITO) layer 2.Indium tin oxide (ITO) layer 2 is as an anode and a metal level 4 covers on the organic luminous layer 3 as a cathode electrode and is connected to one negative voltage-3V to the-9V lighting function with induction organic luminous layer 3.Organic luminous layer 3 can be a single film layer structure or the THIN COMPOSITE rete structure of thickness less than 100nm.Because this very little thickness, when impurity particle is fallen on the organic luminous layer 3 or it can produce the manufacturing defect of pin hole down or is damaged by accident.When pin hole appears at organic luminous layer 3, anode electrode, promptly ITO layer 2 is to be short-circuited to cathode electrode metal level 4.For being familiar with manufacturing display unit professional and technical personnel, utilize the light-emitting diode of organic luminous layer to make display unit with very little thickness, the fault of luminous flat device is still insoluble problem.
People such as Zhang are at United States Patent (USP) 5,798,170, title " Long Operating Life forPolymer Light Emitting Diodes " the improved anti-patience of bluring, disperse, failing when disclosing a kind of Organic Light Emitting Diode and having long-time the use.Shown in Figure 1B and Fig. 1 C, this patent disclosure a kind of polymer LED assembly 20, it comprises electron emitting cathode contact 12, the electron emitting cathode contact can be the metal such as the calcium of low work function relatively.Negative electrode contact 12 is to be configured on the polymeric layer 14 of semiconductor and cold light combination to be supported by a substrate 18.Substrate 18 is that part is coated with transparent conductive layer 16, and transparent conductive layer 16 has high work function, and promptly high ionization potential is with the anode electrode as ejected electron.Afterwards, light-emitting diode structure is to contain polyaniline by putting a thin layer 15, and promptly PANI improves between grandmother's viridin salt (emeraldinesalt) insertion cold light layer 14 and the electrode 16.Figure 1B shows another available embodiment of patent assembly 10, uses the anode electrode of PANI layer 15 as ejected electron, and wherein PANI layer 15 contains grandmother's viridin salt (emeraldine salt) of high conduction.Can stabilizing component usefulness reach the anti-decline that terminates in loss in efficiency in the dark non-launch point of formation owing to the thin layer 15 that contains grandmother's viridin salt has particular patch resistance, thereby can reach effect than the long life.
Contain grandmother's viridin salt (emeraldine salt) of impedance in various degree as the disclosed effective use one polyaniline layer of people such as Zhang, yet the PANI layer is not suitable as the intermediate layer, and causes the restriction of this application.The thickness of PANI layer and density distribution can't be controlled accurately and obtain uniformity highly is the difficulty place of this restriction, and the problem that pin hole damages still takes place.Because these difficulties, even the PANI layers that the people proposed such as application Zhang, the problem of short circuit and component faults still can't solve fully between anode electrode and the cathode electrode.
Therefore, utilize Organic Light Emitting Diode to design and the technology of making flat display apparatus still has and need improve part.Moreover particularly, this technology still has need provide an Organic Light Emitting Diode with film layer structure, and this film layer structure can lower the defective of pin hole problem.This film layer structure also need provide a current limit function to avoid being damaged because of the big electric current between anode and the negative electrode with the protection assembly.In addition, luminescence component also need a current distribution layer can be reduced by the components performance decline that uneven electric current distribution was caused to lower like this making of uneven electric current distribution.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a kind of Organic Light Emitting Diode and manufacture method thereof, adopt new film layer structure after, this Organic Light Emitting Diode can use for a long time and can be not on the decline.
Another object of the present invention is to provide a kind of Organic Light Emitting Diode and manufacture method thereof, its improved film layer structure has a new middle inorganic layer, and inorganic layer damages for the caused thin layer of fine particle and has stronger impedance and so make this improved film layer structure can reduce the shortcoming of pin hole problem in the middle of this.
Another object of the present invention is to provide a kind of Organic Light Emitting Diode and manufacture method thereof, this Organic Light Emitting Diode uses an improved film layer structure, have an inorganic intermediate layer as a current-limiting layer, can prevent because electric current surpasses the assembly damage that a maximum current density is caused.
Another object of the present invention is to provide a kind of Organic Light Emitting Diode and manufacture method thereof, this Organic Light Emitting Diode uses an improved film layer structure, and have an inorganic intermediate layer as a current distribution layer, can lower on the whole surface of light-emitting diode because the assembly that uneven electric current distribution the caused decline after the long period of operation by more uniform electric current distribution.
In order to achieve the above object, Organic Light Emitting Diode of the present invention (LED) is supported by a substrate of glass that is coated with indium tin oxide (ITO) layer, comprising:
One amorphous silicon (α silicon) barrier layer covers on this substrate of glass that is coated with indium tin oxide (ITO) layer;
One polyaniline (PANI) layer covers on this amorphous silicon (α silicon) barrier layer and an organic luminous layer covers on this PANI layer; And
One conductor electrode layer covers on this luminescent layer.
Organic Light Emitting Diode of the present invention (LED) comprising: an inorganic layer is as the function of a current-limiting layer.
The present invention also provides the manufacture method of a kind of Organic Light Emitting Diode (LED), and this Organic Light Emitting Diode (LED) is formed on one and is coated with on the substrate of glass of indium tin oxide (ITO) layer, comprising:
Forming an amorphous silicon (α silicon) barrier layer covers on this substrate of glass that is coated with indium tin oxide (ITO) layer;
Forming a polyaniline (PANI) layer covers on this amorphous silicon (α silicon) barrier layer and an organic luminous layer covers on this PANI layer; And
Forming a conductor electrode layer covers on this luminescent layer.
The present invention also provides the manufacture method of OLED (LED), comprising: form an inorganic layer as a current-limiting layer in this Organic Light Emitting Diode.
In brief, in a preferred embodiment, the present invention includes an Organic Light Emitting Diode (LED), following explanation is to represent with numeric character, and it is to be indicated among Fig. 2 to be described as follows.Organic Light Emitting Diode is supported by a substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110.Organic Light Emitting Diode comprises that an amorphous silicon (α silicon) barrier layer 115 covers on the substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110.Organic Light Emitting Diode is also drawn together a polyaniline (PANI) layer 120 and is covered on amorphous silicon (α silicon) barrier layer 115 and an organic luminous layer 125 is to be plated on the PANI layer 120.Moreover Organic Light Emitting Diode also has a conductor electrode layer 130 and covers on the luminescent layer 125.In a preferred embodiment, amorphous silicon (α silicon) barrier layer 115 is to conduct in the substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110 and the current density between the conductor electrode layer 130 at a maximum admissible current density 1000mA/cm in order to restriction as current-limiting layer
2Under.In another preferred embodiment, amorphous silicon (α silicon) barrier layer 115 is to conduct between the substrate of glass 105 and conductor electrode layer 130 that are coated with indium tin oxide (ITO) layer 110 in order to distributed current as current distribution layer.Make that so the difference between high current density and the minimum electrical current density is at a maximum admissible current density difference 1000mA/cm
2Under.In gross, the invention discloses a kind of Organic Light Emitting Diode (LED) 100 and have the function of an inorganic layer 115 as current-limiting layer.
Owing to adopted such scheme, the present invention to have following beneficial effect: this Organic Light Emitting Diode assembly has long useful life and reliable luminous efficacy.After adopting new film layer structure, this Organic Light Emitting Diode can use for a long time and can be not on the decline.Its improved film layer structure has a new middle inorganic layer, and inorganic layer damages for the caused thin layer of fine particle and has stronger impedance and so make this improved film layer structure can reduce the shortcoming of pin hole problem in the middle of this.Because this Organic Light Emitting Diode uses an improved film layer structure, has an inorganic intermediate layer as a current-limiting layer, can prevent because electric current surpasses the assembly damage that a maximum current density is caused.This Organic Light Emitting Diode uses an improved film layer structure, and have an inorganic intermediate layer as a current distribution layer, can lower on the whole surface of light-emitting diode because the assembly that uneven electric current distribution the caused decline after the long period of operation by more uniform electric current distribution.
Description of drawings
The present invention is described in detail below in conjunction with accompanying drawing:
Figure 1A shows the profile of traditional Organic Light Emitting Diode;
Figure 1B, Fig. 1 C show the profile of the Organic Light Emitting Diode of two prior aries;
Fig. 2 shows the profile of Organic Light Emitting Diode of the present invention;
Fig. 3 A to 3D shows the manufacturing process profile of the Organic Light Emitting Diode of shop drawings 2;
Fig. 4 shows another Organic Light Emitting Diode profile of the present invention;
Fig. 5 A to 5E shows the manufacturing process profile of the Organic Light Emitting Diode of shop drawings 4.
Symbol description among the figure:
100,200 Organic Light Emitting Diodes
105,205 substrate of glass
110,210 indium tin oxides (ITO) layer
115,215 inorganic barrier layers
120,220 polyanilines (PANI) layer
125,230 organic luminous layers
225 ITO islands
130,235 conductor electrode layers
Embodiment
Embodiment
Fig. 2 shows the profile of a kind of Organic Light Emitting Diode 100 of the present invention.Organic Light Emitting Diode 100 is formed on the substrate of glass 105, one indium tin oxide (ITO) layer 110 is formed on the substrate of glass 105, one inorganic barrier layer 115 covers ITO layer 110, this inorganic barrier layer 115 covers ITO layer 110, one PANI fully or a PEDT/PSS (polyethylene sulphur dioxide fen polystyrene sulphur ester) layer 120 is formed on the inorganic barrier layer 115.Then, an organic luminous layer 125 is to be plated on the PANI layer 120 and to cover and as the function of an electrode of light-emitting diode with one calcium/aluminium or magnesium/silver layer 130.
In a preferred embodiment, inorganic barrier layer 115 can be an amorphous silicon layer, and this inorganic barrier layer also can be a noncrystal indium tin oxide (ITO) layer or indium/Zirconium oxide (IZO) layer, or the film barrier layer of other pattern, and its sheet resistor is between 10
3Ohms/cm
2To 10
8Ohms/cm
2One sputter-deposited, plasma gas phase deposition (PVD) or a plasma enhanced chemical vapor deposition (PECVD) program can be applicable to form film barrier layer 115.The purpose that adds this inorganic barrier layer is will limit electric current with the protection assembly, and this electric current is to be limited in when short circuit to occur in a maximum admissible electric current under the situation between anode electrode and cathode electrode.By the barrier layer of this restriction electric current, be to be shorted to cathode electrode even work as an anode electrode, because short circuit current is to be limited under the maximum admissible electric current, therefore can prevent the damage of the part of light-emitting diode.Simultaneously, be to be limited under the maximum admissible electric current when electric current passes short dot, so will not have adverse influence for display brightness and uniformity.Moreover barrier layer 115 is also improved electric current as the function of protecting and can be uniformly distributed between anode electrode and cathode electrode.Can reach the whole surface of more uniform electric current distribution by this inorganic barrier layer as electric current restriction and distribution layer in the LED assembly.Owing to reach more uniform electric current distribution, can improve the uniformity of demonstration.Moreover the useful life of LED assembly is also improved and prolonged to more uniform electric current distribution, and this is because of reaching because of the caused display dot of uneven electric current distribution ongoing operation decays by reducing.
According to Fig. 2, the invention discloses a kind of Organic Light Emitting Diode (LED), Organic Light Emitting Diode is supported by a substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110.Organic Light Emitting Diode comprises that an amorphous silicon (α silicon) barrier layer 115 covers on the substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110.Organic Light Emitting Diode comprises that also a polyaniline (PANI) layer 120 covers on amorphous silicon (α silicon) barrier layer 115 and an organic luminous layer 125 is to be plated on the PANI layer 120.Moreover Organic Light Emitting Diode also has a conductor electrode layer 130 and covers on the luminescent layer 125.In a preferred embodiment, amorphous silicon (α silicon) barrier layer 115 is to conduct in the substrate of glass 105 that is coated with indium tin oxide (ITO) layer 110 and the current density between the conductor electrode layer 130 at a maximum admissible current density 1000mA/cm in order to restriction as current-limiting layer
2Under.In another preferred embodiment, amorphous silicon (α silicon) barrier layer 115 is to conduct between the substrate of glass 105 and conductor electrode layer 130 that are coated with indium tin oxide (ITO) layer 110 in order to distributed current as current distribution layer.Make that so the difference between maximum current density and the minimum electrical current density is at a maximum admissible current density difference 1000mA/cm
2Under.In gross, the invention discloses a kind of Organic Light Emitting Diode (LED) 100 and have the function of an inorganic layer 115 as current-limiting layer.
Fig. 3 A to 3E shows the manufacturing step of the light-emitting diode of shop drawings 2.In Fig. 3 A, an ITO layer 110 is formed on the substrate of glass 105 by using sputter deposition process.Afterwards, in Fig. 3 B, a plasma vapour deposition (PVD) or a plasma enhanced chemical vapor deposition (PECVD) program are to be used for forming inorganic α silicon layer 115 on ITO layer 110.One to revolve coating process be to be used for forming PANI layer 120 on inorganic α silicon layer 115.Shown in Fig. 3 C, in the process that forms PANI layer 120, owing to the pollution of impurity particle 123 forms an aperture 122.And then use one to revolve coating process and form an organic luminous layer 125, shown in Fig. 3 D.Extra aperture is formed in the process that forms organic luminous layer 125.A metallic cathode layer 130 is to form by the vacuum vapor deposition method afterwards.The metallic cathode layer can be inserted in the aperture 122 and the inorganic α silicon layer of contact, inorganic α silicon layer 115 have specific electrical resistance therefore as a current-limiting layer in order to the restriction electric current under a maximum current, so can prevent the damage of light-emitting diode and can solve as the particle contamination problems of icon.
Fig. 4 shows the profile of a kind of Organic Light Emitting Diode 200 of another preferred embodiment of the present invention.The basal layer structure is identical with the illustrated structure of Fig. 2 substantially, and unique difference is to be to have a lot of ITO island to be formed on the inorganic amorphous silicon layer.Organic Light Emitting Diode 200 is formed on the substrate of glass 205, and an indium tin oxide (ITO) layer 210 is formed on the substrate of glass 205, and an inorganic α silicon barrier layer 215 covers ITO layer 210, and this inorganic barrier layer 215 covers ITO layer 210 fully.Afterwards, a plurality of ITO island 225 is formed on the inorganic α silicon barrier layer, and a PANI or a PEDT/PSS (polyethylene sulphur dioxide fen polystyrene sulphur ester) layer 220 is formed on the ITO island and between the ITO island.Then, an organic luminous layer 230 is to be plated on the PANI layer 220 and to cover and as the function of an electrode of light-emitting diode with one calcium/aluminium or magnesium/silver layer 235.
According to above-mentioned explanation, the invention also discloses and a kind ofly be coated with the method that forms an Organic Light Emitting Diode (LED) on the substrate of glass of indium tin oxide (ITO) layer one, the method comprises that step a) forms amorphous silicon (α silicon) barrier layer and covers on the substrate of glass that is coated with indium tin oxide (ITO) layer; B) forming a polyaniline (PANI) layer covers on amorphous silicon (α silicon) barrier layer and an organic luminous layer is to cover on the PANI layer; And c) forming a conductor electrode layer covers on the luminescent layer.In a preferred embodiment, the step that forms amorphous silicon (α silicon) barrier layer comprises that forming amorphous silicon (α silicon) barrier layer conducts in the substrate of glass and the step of the current density between the conductor electrode layer under a maximum admissible current density that are coated with indium tin oxide (ITO) layer in order to restriction as current-limiting layer.In another preferred embodiment, the step that forms amorphous silicon (α silicon) barrier layer comprises that formation conducts in substrate of glass that is coated with indium tin oxide (ITO) layer and the step between the conductor electrode layer in order to distributed current as current distribution layer, makes that so the difference between high current density and the minimum electrical current density is under a maximum admissible current density difference.In another preferred embodiment, form amorphous silicon (α silicon) barrier layer and comprise that as the step of a current-limiting layer forming amorphous silicon (α silicon) barrier layer conducts in the substrate of glass that is coated with indium tin oxide (ITO) layer and the current density between the conductor electrode layer at a maximum admissible current density 1000mA/cm in order to restriction as current-limiting layer
2Under step.In another preferred embodiment, the step that forms amorphous silicon (α silicon) barrier layer comprises that formation conducts in substrate of glass that is coated with indium tin oxide (ITO) layer and the step between the conductor electrode layer in order to distributed current as current distribution layer, makes that so the difference between high current density and the minimum electrical current density is at a maximum admissible current density difference 1000mA/cm
2Under.In another preferred embodiment, the method also is included in and forms the step that one second indium tin oxide (ITO) layer becomes not continuous island and covers with a polyaniline (PANI) layer on amorphous silicon (α silicon) barrier layer.
In a preferred embodiment, inorganic barrier layer 215 can be an amorphous silicon layer, and this barrier layer also can be a noncrystal indium tin oxide (ITO) layer or indium/Zirconium oxide (IZO) layer, or the film barrier layer of other pattern, and its sheet resistor is between 10
3Ohms/cm
2To 10
8Ohms/cm
2The ITO island can be square or hexagon.The thickness range of ITO island layer is between 10 to 100 microns.Distance between adjacent island is 10 times of thickness of α silicon barrier layer 215 or bigger.
Fig. 5 A to 5E shows the manufacturing step of the light-emitting diode of shop drawings 4.In Fig. 5 A, an ITO layer 210 is formed on the substrate of glass 205 by using sputter deposition process.Afterwards, in Fig. 5 B, a plasma vapour deposition (PVD) or a plasma enhanced chemical vapor deposition (PECVD) program are to be used for forming inorganic α silicon layer 215 on ITO layer 210.In Fig. 5 C, an ITO layer 225 is to be formed on the inorganic α silicon layer 215 and ITO layer 225 is that patterning is to form a plurality of ITO island.In Fig. 5 D, one to revolve coating process be to be used for forming PANI layer 220 on ITO island 225.Also shown in Fig. 3 C, in the process that forms PANI layer 120, because the pollution of impurity particle forms aperture (demonstration especially).And then use one to revolve coating process and form an organic luminous layer 230 (not shown)s.Form a metallic cathode layer 235 by the vacuum vapor deposition method afterwards.The metallic cathode layer can be inserted in the aperture and the inorganic α silicon layer 215 of contact, and inorganic α silicon layer has specific electrical resistance and can be used as a current-limiting layer in order to limit electric current under a maximum current, so can prevent the damage of light-emitting diode.The ITO layer have than the big work function of α silicon layer and work function that therefore need be big for the hole-emission to the PANI layer from the ITO layer.Therefore, the ITO layer is to form to compensate poor in hole-emission work function.
According to above-mentioned explanation, the invention also discloses the method for a kind of manufacturing one Organic Light Emitting Diode (LED), the method is included in and forms an inorganic layer in the Organic Light Emitting Diode (LED) as a current-limiting layer.In a preferred embodiment, the step that forms inorganic layer comprises the step that forms amorphous silicon (α silicon) barrier layer work.In another preferred embodiment, the method comprises that also forming one is coated with the substrate of glass of indium tin oxide (ITO) layer to be supported with the step of OLED, moreover the formation inorganic layer covers the step on the substrate of glass that is coated with indium tin oxide (ITO) layer.In another preferred embodiment, the method comprises that also forming a polyaniline (PANI) layer covers the step that reaches on the inorganic layer on the organic luminous layer covering PANI layer.With form a conductor electrode layer and cover step on the luminescent layer.In another preferred embodiment, the method also is included in and forms the step that one second indium tin oxide (ITO) layer becomes not continuous island and covers with a polyaniline (PANI) layer on the inorganic layer.
Inorganic α silicon barrier layer be in order to the restriction electric current with the protection assembly, this electric current is to be limited in when short circuit to occur in a maximum admissible electric current under the situation between anode electrode and cathode electrode.By the barrier layer of this restriction electric current, be to be shorted to cathode electrode even work as an anode electrode, because short circuit current is to be limited under the maximum admissible electric current, therefore can prevent the damage of the part of light-emitting diode.Simultaneously, be to be limited under the maximum admissible electric current when electric current passes short dot, so will not have adverse influence for display brightness and uniformity.Moreover barrier layer youngster 5 also improves electric current as the function of protecting and can be uniformly distributed between anode electrode and cathode electrode.Can reach the whole surface of more uniform electric current distribution by this inorganic barrier layer as electric current restriction and distribution layer at the LED assembly.Owing to reach more uniform electric current distribution, can improve the uniformity of demonstration.Moreover the useful life of LED assembly is also improved and prolonged to more uniform electric current distribution, and this is because of reaching because of the caused display dot of uneven electric current distribution ongoing operation decays by reducing.The benefit of ITO/ α silicon barrier layer/ITO structure is to make work function can be matched with between α silicon and the organic material to reduce operating voltage.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is as the criterion with the content of claims, specification and Figure of description.
Claims (14)
1. an Organic Light Emitting Diode is supported by a substrate of glass that is coated with indium tin oxide layer, comprising:
One amorphous silicon barrier layer covers on this substrate of glass that is coated with indium tin oxide layer;
One polyaniline layer covers on this amorphous silicon barrier layer and an organic luminous layer covers on this polyaniline layer; And
One conductor electrode layer covers on this luminescent layer.
2. Organic Light Emitting Diode according to claim 1 is characterized in that: this amorphous silicon barrier layer is conducted in this in order to restriction as a current-limiting layer and is coated with the substrate of glass of indium tin oxide layer and the current density between this conductor electrode layer under the maximum admissible current density.
3. Organic Light Emitting Diode according to claim 1 is characterized in that: this amorphous silicon barrier layer is conducted to be coated with between the substrate of glass of indium tin oxide layer and this conductor electrode layer in this in order to distributed current as a current distribution layer and is made that so the difference between maximum current density and the minimum electrical current density is under maximum admissible current density difference.
4. Organic Light Emitting Diode according to claim 1 is characterized in that: this Organic Light Emitting Diode also comprises, one second indium tin oxide layer becomes the island that do not link to each other and is distributed on this amorphous silicon barrier layer and with this polyaniline layer and covers.
5. Organic Light Emitting Diode, this Organic Light Emitting Diode also comprises:
One is coated with the substrate of glass of indium tin oxide layer in order to support this Organic Light Emitting Diode;
One inorganic barrier layer covers on this substrate of glass that is coated with indium tin oxide layer, and this inorganic layer barrier layer is noncrystal indium tin oxide layer or indium/Zirconium oxide layer, or sheet resistor is between 10
3Ohms/cm
2To 10
8Ohms/cm
2Film barrier layer, with function as a current-limiting layer;
One polyaniline layer covers on this inorganic barrier layer and an organic luminous layer covers on this polyaniline layer; And
One conductor electrode layer covers on this luminescent layer.
6. Organic Light Emitting Diode according to claim 5 is characterized in that: comprise that one second indium tin oxide layer becomes the island that links to each other and is distributed on this inorganic barrier layer and with this polyaniline layer and covers.
7. the manufacture method of an Organic Light Emitting Diode (LED), this Organic Light Emitting Diode is formed on one and is coated with on the substrate of glass of indium tin oxide layer, comprising:
Forming an amorphous silicon barrier layer covers on this substrate of glass that is coated with indium tin oxide layer;
Form that a polyaniline layer covers on this amorphous silicon barrier layer and an organic luminous layer covers on this polyaniline layer; And
Forming a conductor electrode layer covers on this luminescent layer.
8. manufacture method according to claim 7 is characterized in that: the step that forms this amorphous silicon barrier layer comprises that forming this amorphous silicon barrier layer conducts in this in order to restriction as a current-limiting layer and be coated with the substrate of glass of indium tin oxide layer and the step of current density under a maximum admissible current density between this conductor electrode layer.
9. manufacture method according to claim 7 is characterized in that: the step that forms this amorphous silicon barrier layer comprises that formation conducts to be coated with between the substrate of glass of indium tin oxide layer and this conductor electrode layer in this in order to distributed current as a current distribution layer makes that so the difference between high current density and the minimum electrical current density is under a maximum admissible current density difference.
10. manufacture method according to claim 8 is characterized in that: form this amorphous silicon barrier layer and comprise that as the step of a current-limiting layer forming this current-limiting layer conducts in this in order to restriction and be coated with the substrate of glass of indium tin oxide layer and the current density between this conductor electrode layer at a maximum admissible current density 1000mA/cm
2Under step.
11. manufacture method according to claim 9 is characterized in that: the step that forms this amorphous silicon barrier layer comprises that formation conducts to be coated with between the substrate of glass of indium tin oxide layer and this conductor electrode layer in this in order to distributed current as a current distribution layer makes that so the difference between high current density and the minimum electrical current density is at a maximum admissible current density difference 1000mA/cm
2Under.
12. manufacture method according to claim 7 is characterized in that: this method also comprises, forming one second indium tin oxide layer becomes the island that do not link to each other and be distributed on this amorphous silicon barrier layer and with this polyaniline layer and cover.
13. the manufacture method of an Organic Light Emitting Diode comprises: in this Organic Light Emitting Diode, form an inorganic layer as a current-limiting layer;
Form one and be coated with the substrate of glass of indium tin oxide layer in order to support this Organic Light Emitting Diode;
Form an inorganic barrier layer and cover on this substrate of glass that is coated with indium tin oxide layer, this inorganic layer barrier layer is noncrystal indium tin oxide layer or indium/Zirconium oxide layer, or sheet resistor is between 10
3Ohms/cm
2To 10
8Ohms/cm
2Film barrier layer, with function as a current-limiting layer;
Form that a polyaniline layer covers on the inorganic barrier layer and an organic luminous layer covers on this polyaniline layer; And
Forming a conductor electrode layer covers on this luminescent layer.
14. manufacture method according to claim 13 is characterized in that: this method also comprises, forming one second indium tin oxide layer becomes the island that do not link to each other and be distributed on this inorganic barrier layer and with this polyaniline layer and cover.
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|---|---|---|---|
| CNB011107103A CN1200463C (en) | 2001-04-13 | 2001-04-13 | Organic LED and its making process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011107103A CN1200463C (en) | 2001-04-13 | 2001-04-13 | Organic LED and its making process |
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| CN1200463C true CN1200463C (en) | 2005-05-04 |
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| CN100342563C (en) * | 2003-02-20 | 2007-10-10 | 友达光电股份有限公司 | Packaging method for organic LED |
| US7564182B2 (en) * | 2005-06-29 | 2009-07-21 | Eastman Kodak Company | Broadband light tandem OLED display |
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