CN1254959C - Light mechanical type microbeam array heating type infrared image sensor - Google Patents
Light mechanical type microbeam array heating type infrared image sensor Download PDFInfo
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- CN1254959C CN1254959C CN 200310112820 CN200310112820A CN1254959C CN 1254959 C CN1254959 C CN 1254959C CN 200310112820 CN200310112820 CN 200310112820 CN 200310112820 A CN200310112820 A CN 200310112820A CN 1254959 C CN1254959 C CN 1254959C
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Abstract
The present invention relates to an optical-mechanical microbeam array heating type infrared image sensor used for obtaining and converting infrared signals, which comprises microbeam elements distributed in arrays, wherein each microbeam element comprises an infrared absorption plate and two groups of heat-deformation mechanisms which are symmetrically connected to both sides of the infrared absorption plate. The present invention is characterized in that the whole microbeam element has a bottomless single layer plane structure in lateral support; the heat-deformation mechanisms are distributed in a fold type by heat shield beams and deformation beams; the infrared absorption plate is connected with the deformation beam, and a supporting beam is connected with a heat shield high beam; each group of heat-deformation mechanisms is composed of at least one heat shield beam and at least one deformation beam; the microbeam elements form arrays in an order procumbent mode. The present invention has the advantages of simple process realization, no adhesion of devices, no easy failure or destruction, and low requirements to the vacuum degree of devices. A part without a silicon substrate reflects infrared, and more energy directly reaches a detection unit, so the detection is more sensitive.
Description
One, technical field
The present invention relates to a kind of sensing element that is used to obtain and change infrared signal, relate in particular to a kind of micro-beam array pattern of fever infrared imagery transducer.
Two, background technology
The infrared detective device is used for sightless infrared radiation is converted into visible image.According to the difference of detection principle, can roughly be divided into two classes to traditional infrared detective device: quantum type and infrared radiation detector pattern of fever.
The infrared radiation detector of quantum type is the energy of electronics with the Conversion of energy of infrared photon.Because the energy that the electronics warm-up movement produces under the energy of the excited electron of the infrared photon of 8-14 micron and the room temperature is suitable, therefore the temperature maintenance of detector need be suppressed the electronics warm-up movement in liquid nitrogen temperature (about 77K), the infrared detective device that makes quantum type is heaviness but also cost an arm and a leg not only.
Traditional heat type infrared radiation detector absorbs the infrared energy of incident, and the probe unit temperature is risen, and detects the thermoelectric effect of the temperature rise initiation of detector again by integrated circuit, such as resistivity and changes in capacitance etc., obtains the information of infrared radiation.Thermoelectric effect is read from each detector cells with integrated circuit in traditional pattern of fever Infrared Detectors, because the electric current input can produce additional heat on detector cells, so this mode is difficult to detect exactly the infrared radiation of incident.Link to each other by the good plain conductor of heat conductivility between detector cells and the substrate simultaneously, make hot isolation become very difficult, seriously limited the temperature rise performance.Thermoelectric effect is all very faint in addition, and for detectable signal, integrated circuit will have quite high signal to noise ratio and very strong gain.This has not only increased the design difficulty of detector and reading circuit, has improved the price of complete machine of the infrared detective device of pattern of fever simultaneously, is not easy to it and uses widely.
Sensing unit based on the heat type infrared radiation detector of the micro-cantilever unit of light-mechanical (or being called for short micro-joist unit) is a bi-material microcantilevel.The infrared luminous energy of incident is detected the heat energy that is converted into cantilever beam after the unit absorbs, cause cantilever beam and produce heat deformation,, non-contactingly detect deformation again by optical pickup system, the for example amount of deflection of cantilever beam or corner etc. just can obtain the thermal radiation information of testee.The infrared radiation detector of this pattern of fever can be worked under the condition that does not need to freeze, and the mode that optics is read can not produce additional heat on detector, need not plain conductor and connect, be easier between probe unit and substrate, realize good heat isolation.In addition, general micro fabrication has been adopted in the making of detector sensing unit, with existing IC manufacture craft compatibility, has reduced exploitation and cost of manufacture widely.Therefore based on the Infrared Detectors of this light-mechanical micro-cantilever unit, be expected to develop more high performance heat type infrared radiation sniffer.
The novel micro-cantilever unit component (as accompanying drawing 1) that Univ California-Berkeley designs and produces, device is made of hot isolation beams 2, variable shaped beam 3, INFRARED ABSORPTION plate 1 and anchor pin 6, silicon substrate 7, hot isolation beams, variable shaped beam and INFRARED ABSORPTION plate are distributed in two-layer, and unsettled the standing on the silicon substrate of anchor pin by standing.Whole micro-joist unit is a three-decker.The thermal-induced deformation amount is the acoplanarity displacement of the INFRARED ABSORPTION plate of tested micro-joist unit front end.And in order to improve detectivity, hot isolation beams and variable shaped beam all adopt the elongated straight-bar of trying one's best, and make apart from each other between INFRARED ABSORPTION plate and the anchor pin and produce bigger thermal-induced deformation amount.Therefore, will adopt the nested mode of multilevel-cell structure to avoid the idle and waste (as accompanying drawing 2) of large tracts of land that causes thus.
The technical thought of existing micro-joist unit structure all is to grow the formed film of material (such as phosphorosilicate glass, polysilicon, high polymer, photoresist etc.) that one deck can be removed by follow-up operation on silicon face, as sacrifice layer, subsequently after making the required device structure on the sacrifice layer, remove sacrifice layer again, obtain standing in the unsettled device of multilayer on lower floor's silicon substrate.
Owing to due to technology and the nested structure, kept silicon substrate in the above structure.When infrared ray through silicon substrate former and later two surperficial the time, reflex can take place, about 40% infrared ray can't arrive on the sensitive detection parts, just makes ultrared absorptivity seriously descend, and has reduced the sensitivity of sensitive detection parts.And plating anti-reflection film technology particularly is difficult to realize for the coating process of the wavelength period of the such broad of 8～14um, coating process not only causes device to destroy easily, and owing to can only in former and later two surfaces, not have a surface coating of device, so can't effectively eliminate all reflections.
In addition, owing to be subjected to process technology limit, above-mentioned sacrificial layer thickness is difficult to surpass 2～3 microns, and like this, the distance of probe unit and silicon substrate is also just several microns (especially the distance of multilevel-cell nested structure is littler); Distance between the front end INFRARED ABSORPTION plate of each unit and the rear end anchor pin then can reach tens of even hundreds of microns, and is again the cantilever beam device that an end props up admittedly, belongs to weak structure.Thus, the power that variation of temperature on the probe unit array or other reason cause may cause that all little beam front end touches silicon substrate because of distortion, make little beam front end tightly stick on the silicon substrate, can not recover to lose efficacy, thereby reduced the dependability of the temperature-measuring range and the device of sensitive detection parts because of the effect of surface force.And owing to only there is several microns gap between substrate and hanging structure, the existence of air can cause the heat dissipation of structure to substrate, so the vacuum degree of device is proposed very high requirement, such as 0.1Pa, makes it to be difficult to obtain practical application.
The existence of silicon substrate has also brought the complexity of removing sacrifice layer process, and device is also as easy as rolling off a log in the technical process of removing sacrifice layer sticks together, and causes component failure even destruction, and rate of finished products is low.Also increased simultaneously the inconsistency between the different components, brought difficulty to a series of follow-up problems such as demarcation.
Adopt nested configuration also can bring some other problem: at first, to exist nested against one another between unit and the unit and part that cover, make that the position of the position of incident infrared light and sensitive detection parts imaging is inconsistent, can produce the aliasing of image.For fear of this situation, prior art has adopted the shading diaphragm of Pt layer as infrared light, will bring the incident infrared light reflection of aliasing to go back.But this design just makes that the infrared ray that has passed through silicon substrate further loses, and makes the energy that finally detects decline to a great extent.Secondly, the nested complex structure that makes has also just further strengthened the complexity and the limitation of technology.Simultaneously, the inefficacy of a part of unit can directly cause or accelerate the inefficacy of adjacent with it unit, makes rate of finished products lower.
Three, technology contents
The object of the present invention is to provide a kind of light-mechanical micro-beam array pattern of fever infrared imagery transducer, this transducer can overcome the device adhesion problems, has improved rate of finished products and reliability, has reduced the infrared reflection loss simultaneously, improves detectivity.
The present invention adopts following technical scheme to solve its technical problem:
A kind of light-mechanical micro-beam array pattern of fever infrared imagery transducer that is used to obtain and change infrared signal, comprise micro-joist unit by array distribution, comprise thermal deformation mechanism and INFRARED ABSORPTION plate in the micro-joist unit, thermal deformation mechanism is the both sides that two groups and symmetry are connected in the INFRARED ABSORPTION plate, and key of the present invention is: whole micro-joist unit is the no bill kept on file layer plane structure of lateral support; Thermal deformation mechanism constitutes the formula of turning back by hot isolation beams and variable shaped beam and distributes; The INFRARED ABSORPTION plate is connected with variable shaped beam, and brace summer is connected with hot isolation beams; Every group of thermal deformation mechanism is made up of at least one hot isolation beams and at least one variable shaped beam; The mode forming array that described micro-joist unit employing is tiled in proper order.
The thermal deformation mechanism of above-mentioned light-mechanical micro-beam array pattern of fever infrared imagery transducer can also constitute the formula of turning back by hot isolation beams, variable shaped beam and heat conduction beam and distribute.
The thermal deformation mechanism of above-mentioned light-mechanical micro-beam array pattern of fever infrared imagery transducer is symmetrically distributed in the both sides of INFRARED ABSORPTION plate.
The micro-joist unit of above-mentioned light-mechanical micro-beam array pattern of fever infrared imagery transducer is by having the thin-film material of absorption to make to infrared; Adhesion metal film on the optical detection face of INFRARED ABSORPTION plate; Adhesion metal film on the one side of variable shaped beam, heat conduction beam and brace summer.
The INFRARED ABSORPTION plate of above-mentioned light-mechanical micro-beam array pattern of fever infrared imagery transducer, the thickness of heat conduction beam are between 1～3um, and the thickness of hot isolation beams and variable shaped beam is between 0.3～2um.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts the no bill kept on file layer plane structure of lateral support in concrete design, at first direct growth is made the required film of device architecture, is utilized the pattern etching legal system to make device architecture on silicon substrate, the silicon substrate of hot isolation beams, variable shaped beam, INFRARED ABSORPTION plate place part in the removal devices structure then, the silicon substrate that only keeps brace summer place part improves its heat conductivility simultaneously to strengthen the support strength of brace summer.Because no silicon substrate, avoided infrared ray through former and later two surperficial situations generations of silicon substrate, make infrared ray can be directly to reach the surface of INFRARED ABSORPTION plate to have overcome the infrared ray loss, significantly improved the sensitivity of sensitive detection parts.And avoided adopting complicated plating anti-reflection film technology.In addition, because the probe unit of device is unsettled fully, there is not the silicon substrate at a distance of several microns in its below, so can not cause that little beam front end touches other parts because of distortion owing to the influence of variation of temperature on the detection array or impulsive force, thereby the inefficacy of having avoided adhesion to cause has improved the dependability of the temperature-measuring range and the device of sensitive detection parts.And, substitute the complexity that sacrifice layer process has also been simplified technology greatly with the technology of removing silicon substrate, make easier the obtaining of consistency between the device to have alleviated a series of follow-up the complex natures of the problem such as demarcation greatly.So compared with prior art, the present invention has the advantage of the following aspects:
Because whole micro-joist unit is single layer device, not only technology realizes simply, and device do not stick together, is not easy to lose efficacy and destroyed, and the vacuum degree of device is required also significantly to reduce.
No silicon substrate partial reflection infrared ray, more energy directly arrives probe unit, makes detection sensitiveer.
The formula of turning back design by hot isolation beams and variable shaped beam, not only increased the total length of hot isolation beams and variable shaped beam greatly, and help the INFRARED ABSORPTION plate and form long narrow rectangular configuration, the INFRARED ABSORPTION plate is in because on the maximum direction of the angular deflection due to the deformation angle stack, to obtain the peak response in the optical measurement.Thereby improved the thermal deformation sensitivity of probe unit.
Because the formula of turning back of hot isolation beams and variable shaped beam design, its both sides or two ends at the INFRARED ABSORPTION plate are closely arranged, therefore, improved the plane utilance greatly, the mode that each unit can employing tiles in proper order constitutes detection array, large-area free time and waste can not occur, thereby avoid the defective that adopts the multilevel-cell nested configuration and cause thus.
Four, description of drawings
Fig. 1 is the micro-cantilever cellular construction sketch (end view) of Berkeley.
Fig. 2 is a plurality of unit of the micro-cantilever of a Berkeley nested structure schematic diagram (vertical view).
Fig. 3, the 4th, the structural representation (vertical view and profile thereof) of one of embodiment of the present invention (every group of thermal deformation mechanism is made up of a hot isolation beams and a variable shaped beam).
Fig. 5 is the structural representation (vertical view) of two (every group of thermal deformation mechanism is made up of a hot isolation beams of turning back and a variable shaped beam) of embodiment of the present invention.
Fig. 6 is the structural representation (vertical view) of three (every group of thermal deformation mechanism is made up of two hot isolation beams and two variable shaped beams) of embodiment of the present invention.
Fig. 7 is the structural representation (vertical view) of four (every group of thermal deformation mechanism is made up of a hot isolation beams, two variable shaped beams and a heat conduction beam) of embodiment of the present invention.
Fig. 8 is the structural representation (vertical view) of five (thermal deformation mechanism is positioned at the end of INFRARED ABSORPTION plate) of embodiment of the present invention.
Fig. 9 is an angular deflection deflection schematic diagram of the present invention.
Figure 10, the 11st, deformation angle stack schematic diagram of the present invention.When thermal deformation took place, the distortion situation was as follows.Figure 10: hot isolation beams 2a is not crooked, and it is θ 1 (corner of variable shaped beam 3a self bending) that variable shaped beam 3a bending obtains corner endways; Figure 11: hot isolation beams 2b is not crooked, and corner remains θ 1 endways, variable shaped beam 3b bending, and rotational angle theta 2 (corner of variable shaped beam 3b self bending) is that θ 1 superposes with the corner of variable shaped beam 3a, is θ 1+ θ 2 in the terminal size of variable shaped beam 3b; Because baffle is out of shape hardly, so the corner that obtains on baffle is θ 1+ θ 2.
Figure 12 is an array tiling schematic diagram of the present invention.
Five, specific embodiments
A kind of light-mechanical micro-beam array pattern of fever infrared imagery transducer that is used to obtain and change infrared signal, comprise micro-joist unit by array distribution, micro-joist unit is made up of thermal deformation mechanism and INFRARED ABSORPTION plate 1, brace summer 4, thermal deformation mechanism is formed (a described continuous part that is meant between this member and the two ends that other members link to each other) by a hot isolation beams 2 and variable shaped beam 3, INFRARED ABSORPTION plate 1 is connected with an end of variable shaped beam 3, the variable shaped beam other end is connected with hot isolation beams 2, and the other end of hot isolation beams 2 is located at (referring to Fig. 3,4) on the brace summer 4.That is whole micro-joist unit is the no bill kept on file layer plane structure of lateral support, each member all is positioned at one deck but not different layers (described layer is meant the structure sheaf of member, but not the composite bed of the composition material of member, be that some member is metal and nonmetal being composited, but structurally be called same one deck), the below of thermal deformation mechanism and INFRARED ABSORPTION plate 1 does not have silicon substrate, and brace summer 4 is positioned at the side direction of thermal deformation mechanism and INFRARED ABSORPTION plate 1, the anchor pin of not standing.Hot isolation beams 2 and variable shaped beam 3 constitute the formula of turning back and distribute, and instant heating isolation beams 2 and variable shaped beam 3 are positioned at the both sides of INFRARED ABSORPTION plate 1 turns back back and forth, and be also isometric with it with the parallel longitudinal of INFRARED ABSORPTION plate 1, forms compact, well-behaved planar structure.The length of hot isolation beams 2 can also be increased, promptly every hot isolation beams 2 itself can form one or many and turns back (referring to Fig. 5), to increase the effect that heat is isolated.INFRARED ABSORPTION plate 1 is connected with variable shaped beam 3, brace summer 4 is connected with hot isolation beams 2, and the present invention is the variations in temperature (referring to Fig. 9) that reflects infrared imagery by the angular deflection deflection of measuring INFRARED ABSORPTION plate 1.Perhaps, can also between hot isolation beams 2 and variable shaped beam 3, increase a pair of or more hot isolation beams 2 and variable shaped beam 3 and be spaced, promptly form thermal deformation mechanism (referring to Fig. 6) by two or more hot isolation beams 2 and variable shaped beam 3; On this basis, can also between hot isolation beams 2 and variable shaped beam 3, set up heat conduction beam 5 (referring to Fig. 7), heat conduction beam 5 and variable shaped beam 3 are spaced, be every heat conduction beam 5 (can also between variable shaped beam 3 and the INFRARED ABSORPTION plate 1, between variable shaped beam 3 and the hot isolation beams 2) between two variable shaped beams 3, like this, the final angle deflection distortion amount of INFRARED ABSORPTION plate 1 can further improve (because of the deformation angle of many variable shaped beams can produce Overlay, referring to Figure 10,11).When adopting the heat conduction beam, because the good heat conductivity of heat conduction beam is indeformable, make that the temperature of the variable shaped beam that two ends connect is identical, thereby improve the overall deformation effect of member.The micro-joist unit that said structure constitutes is the direct mode forming array (as Figure 12) that tiles in proper order of employing just, the array that obtains closely, rule, unanimity, non-nesting.Thermal deformation mechanism can also be positioned at the end (referring to Fig. 8) of INFRARED ABSORPTION plate, or is positioned at the both sides and the end of INFRARED ABSORPTION plate simultaneously.
Above-mentioned INFRARED ABSORPTION plate 1 is by infrared ray being had the thin-film material of strong absorption effect (as SiN
x, SiO
2, polysilicon etc.) to make, absorption area should be big as much as possible, to increase the heat that absorbs.And, on the sensitive direction of angular deflection, the length of optical detection sensitivity and INFRARED ABSORPTION plate is directly proportional, so in limited zone, long narrow rectangular configuration (the present invention just in time helps this) should be designed to as much as possible, higher optical detection sensitivity can be obtained.With SiN
xBe example, infrared ray is approximately 1um to its penetration depth, and the system thermal capacity of considering crosses conference and slow down system to infrared thermal response speed, so the film optimum thickness should be between 1～3um, make infrared ray fully to be absorbed, have higher thermal response speed simultaneously.But this thickness is not enough to absorb whole incident infrareds, in order to reach best assimilation effect, can utilize the metallic film that adheres on the optical detection face of INFRARED ABSORPTION plate as reflecting surface, makes incident infrared pass SiN
xAfter, unabsorbed part reflects after arriving metal level, passes through SiN for the second time along the opposite direction of incident direction
xFilm, be absorbed once more.Hot isolation beams is by the little material of conductive coefficient (SiN for example
x, SiO
2, polysilicon, high polymer etc.) constitute, for simplified processing process, can adopt the material same with INFRARED ABSORPTION plate 1.Be generally the film beam of square-section, satisfying under the prerequisite of support strength, littler cross-sectional area and longer beam length can obtain better effect of heat insulation.Variable shaped beam is a double-material beam, and the selection of two kinds of materials should consider that thermal coefficient of expansion differs as far as possible big and Young's modulus differs as far as possible little.Generally can adopt metal and nonmetallic combination (for example metal being attached on the nonmetal film), such as Au, Al and SiN
x, SiO
2Combination.Select at the thickness of two kinds of materials of variable shaped beam, thereby obtain maximum sensitivity in order to make beam reach maximum distortion, the two layers of material thickness ratio should be near the inverse ratio square root of corresponding young modulus of material, and the gross thickness of beam should be as far as possible little under the prerequisite that satisfies process conditions and supporting condition.The thickness of hot isolation beams and variable shaped beam is between 0.3～2um.The heat conduction beam is that the little structure of good heat conductivity and thermal deformation constitutes, and for simplified processing process, can adopt the nonmetal beam that adheres to thin metal layer (metal layer thickness is not enough to cause considerable thermal deformation) to constitute.The brace summer material that rigidity is big by good heat conductivity constitutes (for example metal and monocrystalline silicon), to guarantee that each unit is in identical support and heat conduction state, and has consistency preferably, for simplified processing process, can adopt with the same material of hot isolation beams and be processed into one with it, then in the position of brace summer adhesion metal film and reserve part monocrystalline substrate to increase heat conductivility and support strength.The thickness of heat conduction beam is between 1～3um.Whole micro-joist unit is generally square or rectangle, and length of side size is in the scope of 30～200um.
Embodiments of the invention are: the INFRARED ABSORPTION plate is the SiN of 2um by thickness
xConstitute with the Au laminated film of 0.1um, variable shaped beam is the SiN of 0.5um by thickness
xConstitute with the Au laminated film of 0.4um, hot isolation beams is the SiN of 0.5um by thickness
xSingle film constitutes, and the heat conduction beam is the SiN of 2um by thickness
xConstitute with the Au laminated film of 0.1um, brace summer is the SiN of 2um by thickness
xConstitute with the Au laminated film of 0.5um, the below has kept silicon substrate.
Claims (6)
1, a kind of light-mechanical micro-beam array pattern of fever infrared imagery transducer that is used to obtain and change infrared signal, comprise micro-joist unit by array distribution, comprise thermal deformation mechanism and INFRARED ABSORPTION plate in the micro-joist unit, thermal deformation mechanism is the both sides that two groups and symmetry are connected in the INFRARED ABSORPTION plate, and it is characterized in that: whole micro-joist unit is the no bill kept on file layer plane structure of lateral support; Thermal deformation mechanism constitutes the formula of turning back by hot isolation beams and variable shaped beam and distributes; The INFRARED ABSORPTION plate is connected with thermal deformation mechanism, and thermal deformation mechanism is connected with brace summer; Every group of thermal deformation mechanism is made up of at least one hot isolation beams and at least one variable shaped beam; The mode forming array that described micro-joist unit employing is tiled in proper order.
2, light-mechanical micro-beam array pattern of fever infrared imagery transducer according to claim 1 is characterized in that described thermal deformation mechanism constitutes the formula of turning back by hot isolation beams, variable shaped beam and heat conduction beam and distributes.
3, light-mechanical micro-beam array pattern of fever infrared imagery transducer according to claim 1 and 2 is characterized in that described micro-joist unit is by having the thin-film material of absorption to make to infrared; Adhesion metal film on the optical detection face of INFRARED ABSORPTION plate; Adhesion metal film on the one side of variable shaped beam, heat conduction beam and brace summer.
4, light-mechanical micro-beam array pattern of fever infrared imagery transducer according to claim 3 is characterized in that described micro-joist unit is by having the thin-film material of absorption to make to infrared; Adhesion metal film on the optical detection face of INFRARED ABSORPTION plate; Adhesion metal film on the one side of variable shaped beam, heat conduction beam and brace summer.
5, light-mechanical micro-beam array pattern of fever infrared imagery transducer according to claim 4, the thickness that it is characterized in that described INFRARED ABSORPTION plate, heat conduction beam is between 1～3um, and the thickness of hot isolation beams and variable shaped beam is between 0.3～2um.
6, light-mechanical micro-beam array pattern of fever infrared imagery transducer according to claim 5, the thickness that it is characterized in that described INFRARED ABSORPTION plate, heat conduction beam is between 1～3um, and the thickness of hot isolation beams and variable shaped beam is between 0.3～2um.
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| CN 200310112820 CN1254959C (en) | 2003-12-31 | 2003-12-31 | Light mechanical type microbeam array heating type infrared image sensor |
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| CN 200310112820 CN1254959C (en) | 2003-12-31 | 2003-12-31 | Light mechanical type microbeam array heating type infrared image sensor |
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| CN1254959C true CN1254959C (en) | 2006-05-03 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100391238C (en) * | 2006-04-12 | 2008-05-28 | 中国科学技术大学 | Optical reading type thermal infrared image sensor |
| CN100453443C (en) * | 2006-12-01 | 2009-01-21 | 中国科学技术大学 | Glass substrate optical display infra-red sensor |
| CN100581986C (en) * | 2007-01-24 | 2010-01-20 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN100594175C (en) * | 2007-01-24 | 2010-03-17 | 中国科学院微电子研究所 | Optical-mechanical double-layer structural uncooled infrared imaging focal plane array detector |
| CN101446758B (en) * | 2007-11-28 | 2011-05-11 | 中国科学院微电子研究所 | Method for improving smoothness of reflector in micro-mechanical non-refrigeration infrared imaging chip |
| US20110279680A1 (en) * | 2010-05-13 | 2011-11-17 | Honeywell International Inc. | Passive infrared imager |
| CN102012270B (en) * | 2010-09-15 | 2013-03-06 | 昆山光微电子有限公司 | High-performance thermal deformation beam for optical-mechanical thermal infrared sensor and applications thereof |
| CN102510450A (en) * | 2011-10-17 | 2012-06-20 | 北京瑞澜联合通信技术有限公司 | Image sensor, pick-up device and image data generation method |
| CN107328747B (en) * | 2017-07-24 | 2022-12-09 | 京东方科技集团股份有限公司 | Detection chip and detection method using same |
| CN108562360B (en) * | 2018-03-20 | 2020-11-27 | 上海集成电路研发中心有限公司 | Novel infrared sensor structure |
| CN113532655B (en) * | 2021-07-02 | 2023-04-18 | 北京安酷智芯科技有限公司 | Infrared thermal imaging sensor pixel and infrared thermal imaging sensor |
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