CN1248796A - Method for making film resistor - Google Patents
Method for making film resistor Download PDFInfo
- Publication number
- CN1248796A CN1248796A CN 98119374 CN98119374A CN1248796A CN 1248796 A CN1248796 A CN 1248796A CN 98119374 CN98119374 CN 98119374 CN 98119374 A CN98119374 A CN 98119374A CN 1248796 A CN1248796 A CN 1248796A
- Authority
- CN
- China
- Prior art keywords
- thin film
- layer
- insulated substrate
- film resistor
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The method for making a film resistor includes the following steps: firstly, forming a conductive layer defined with pattern on an insulating base plate with prescratching, then using a covering layer to cover the surface which will not form resistance layer, then forming a film resistance material on the nude portion, finally removing the covering layer so as to obtain several film resistor arrays formed on the insulating base plate and possessing pattern defined film resistance layer and conductive layer respectively, then utilizing a multi-beam energy etching process to finish film resistor, and utilizing a physical breaking mode which has no need of cutting insulating base plate to obtain separated film wafer resistors.
Description
The invention relates to a kind of manufacture method that is used in the thin film resistor of microelectronic product, and particularly a kind of for example being used in hybrid circuit (hybridcircuit) microelectronic product, be mainly used in sticking work technology (the Surface Mount Technology in surface, SMT) thin film resistor element, for example diaphragm resistance (thin film chip resistor) or film multiple wafer are arranged the manufacture method of resistance (thin film chip resistor array).
Thin film resistor generally is to be used for microelectronic product, as the usefulness of (passive) electronic circuit component passive in the circuit and/or carrying (load bearing) electronic circuit component, the microelectronic product that is adopted includes integrated circuit microelectronic product and hybrid circuit microelectronic product.
If with regard to the processing procedure of the used thin film resistor of hybrid circuit microelectronic product, traditional methods is in an insulated substrate, for example on a glass insulation substrate or the ceramic insulation substrate, after forming the covering of a film resistor and conductor material, define (pattern) resistance material and conductive pattern in little shadow photoetch (photolithography) mode, afterwards again with focussed laser beam finishing (trim) resistance material, make the resistance value can more accurate control, cut insulated substrate then and form discrete thin film wafers resistance (discrete thin film chip resistor).
Yet above-mentioned known thin film resistor formation method has its shortcoming: plurality of patterns layer or area of the pattern are to form in little shadow photoetch mode in the discrete thin film wafers resistance that makes, and include (1) one pattern definition thin film resistive layer; And (2) a pair of pattern definition conductor layer that is formed at the contact of pattern definition thin film resistive layer.The pattern definition of this resistive layer and conductor layer is that the optical lithography with the photoetch of similar manufacture of semiconductor forms, so, known little shadow photoetch equipment and the material of utilizing finished the definition of pattern than inefficiency, relatively just increase manufacturing cost, owing to need a large amount of chemicals that use, increased the cost of waste water treatment and environmental pollution simultaneously.
Moreover, on be set forth in insulated substrate and use little shadow photoetch mode to form pattern definition resistive layer and conductor layer, again insulating film substrate is separately formed the method for discrete thin film wafers resistance afterwards, its quality requirements to insulated substrate is quite high, must provide surface flatness and fineness goodish insulated substrate, so that follow-up little shadow photoetch equipment can correctly align, generally need utilize the aluminum oxide substrate of 99.6% purity, and need through polishing polishing increasing its flatness and fineness, and the insulated substrate of high flat degree and fineness will increase many costs.
Therefore, the inventor ponders over the method for solution, except making its making that can be applicable to the thin film wafers resistance in the hybrid circuit microelectronic product, more can: (1) is avoided commonly using when forming discrete film resistor wafer, with relevant processing procedure costs such as little shadow equipment that little shadow mode was increased, materials; And (2) are avoided providing the cost of high flat degree with the relevant increases such as insulated substrate of fineness because of need.
The present invention proposes a kind of method of making discrete thin film resistor, and (1) needing to be avoided with relevant processing procedure cost such as follow-up little formed film resistor of shadow photoetch program defining and conductor layer pattern; (2) adopt multi beam (multi-beam) energy etching method finishing resistive layer, the time that the acceleration finishing is spent is to improve production capacity; And (3) adopt the insulated substrate do not need the surface rubbing polishing, and are cheap.
Therefore, purpose of the present invention is the manufacture method that a kind of discrete thin film resistor is provided, to reduce production costs and to improve production capacity.
At first, aspect reducing cost: tradition defines the technology of resistance and conductor material layer in little shadow photoetch mode, the insulated substrate of splendid flatness and surface cleanliness need be provided, so essential insulated substrate that uses high-purity and process surface grinding, and little shadow optical lithography needs to be coated with through photoresistance, exposure, develop, the program of relevant complexity such as etching, need to use photoresistance, (etching of part resistance material need be used very strong chemical agent to chemical agents such as development and etching material, even can't etching), need to use the high dust free room (generally need reach more than the class100) of cleanliness factor, a large amount of waste water treatments and bigger equipment investment and space.Moreover cutting apart of substrate needs with cost higher diamond cutting (dicingsaw) or laser cutting.And the present invention chooses the insulated substrate of the pre-indentation of tool, with shade (mask) and multi beam energy etching method definition resistance material and conductive pattern, can address the above problem in the lump.
Aspect the raising production capacity:, more, improve trimming speed with the multi beam energy etching mode finishing pattern definition thin film resistive layer of non-little shadow photoetch (non-photolithography) except that the aforementioned means that adopted that reduce cost also can partly improve the production capacity.
For reaching the main purpose of the invention described above, a kind of manufacture method of thin film resistor is provided, comprise that step has: provide a surface to form impressed insulated substrate; Form a flatness layer on insulated substrate; Form a discontinuous pattern definition conductor layer in insulated substrate; Form a mask layer in insulated substrate and conductor layer surface, and make part in order to forming the insulated substrate surface of resistive layer, and the part that can expose with the conductor layer that resistive layer electrically contact, and electrically contact with the conductor layer that exposes; Remove mask layer, to form a pattern definition thin film resistive layer; Multi beam energy etching mode finishing pattern with a non-little shadow photoetch defines thin film resistive layer to improve resistance value, and the multiplying power that improves is then decided on the last resistance value of product; And with the last accurately resistance value of the energy beam etching mode refine pattern definition thin film resistive layer of non-little shadow photoetch.Wherein this insulated substrate is one of insulated substrate of forming for a glass insulation substrate and a ceramic insulation substrate.Wherein this insulated substrate is an aluminium oxide (alunina) ceramic insulation substrate, and its alumina composition is about 94%-99.6%.More be contained in before wherein this conductor layer forms and form flatness layer (leveling layer) on this insulated substrate with this insulated substrate of planarization.One of depositional mode of being formed for the shallow plating method of the auxiliary vapour deposition method of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method and physical vapour deposition (PVD) of the depositional mode of this flatness layer wherein.Wherein this flatness layer is the insulating barrier that a silicon dioxide, silicon nitride are formed.Wherein this conductor layer is that mode of printing with a kind of non-little shadow photoetch forms discontinuous pattern.Wherein the mode of printing of this non-little shadow photoetch is one of mode of printing of being formed of screen painting (screenprint) and energy beam induction printing (energy beam induced print).Wherein the mode of printing of this non-little shadow photoetch be utilization in the screen painting mode of a conductor paste, this conductor paste is one of conductor of forming of silver, silver alloy, gold, billon, copper, copper alloy, palladium (palladium), palldium alloy, nickel, nickel alloy.Wherein this mask layer is the mode of printing formation with a kind of non-little shadow photoetch.Wherein this film resistor material is to form in a kind of thin film deposition mode.One of depositional mode of being formed for the shallow plating method of the auxiliary vapour deposition method of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method and physical vapour deposition (PVD) of this thin film deposition mode wherein.Wherein this film resistor material layer is tantalum nitride resistance material, tantalum silicide resistance material, tantalum evanohm resistance material, nichrome resistance material, chromium silicide resistance material and one of high resistance material of being formed of more aforementioned resistance material ordinal number (order).Wherein more be included in the step that this insulated substrate forms indentation, the substrate wafer with definition one adjacent continuous on this insulated substrate by being formed with this pattern definition thin film conductor layer resistive layer on this substrate wafer, makes this substrate wafer form a thin film wafers resistance.The step that wherein forms this indentation is to finish before this conductor layer forms.The step that wherein forms this indentation is finished after this conductor layer forms.Wherein this adjacent films resistance wafer can need not cut off just and can be separated into one discrete (discrete) thin film wafers resistance by this insulated substrate in the physical rupture mode.More comprise the following steps: to utilize a kind of multi beam (multi-beam) energy etching mode of non-little shadow photoetch to repair (trim) this pattern definition thin film resistive layer after wherein removing this mask layer; And this pattern definition thin film resistive layer of energy beam etching mode refine (finetrim) that utilizes a kind of non-little shadow photoetch, to adjust its resistance value.Wherein the employed energy beam of multi beam energy etching mode of this non-little shadow photoetch is one of multi beam energy etching mode of forming of laser beam, focused ion beam and focused beam.Wherein the multi beam energy etching mode of this non-little shadow photoetch is to use ripple to be longer than 532-1064nm, and the energy density of projection beam is 0.1-8.0 watt, and beam diameter is 1.0-100 μ m, and the beam number is the laser beam of 1-31.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Fig. 1 illustrates usedly in the preferred embodiment of the present invention has a perspective view that pre-indentation insulated substrate is arranged;
Fig. 2 to Figure 12 illustrates the profile that utilizes preferred embodiment method of the present invention to form the fabrication steps of discrete thin film resistor on insulated substrate shown in Figure 1;
Figure 13 illustrates the relevant perspective view of corresponding processing procedure profile shown in Figure 4;
Figure 14 illustrates the relevant perspective view of corresponding processing procedure profile shown in Figure 5; And
Figure 15 illustrates the relevant perspective view of counterpart processing procedure profile shown in Figure 8.
Please refer to Fig. 1 to shown in Figure 12, in the discrete thin film wafers resistance manufacturing process for a preferred embodiment of the present invention, on an insulated substrate, form the result in each stage of a continuous film resistor gradually.
As shown in Figure 1, it forms the preceding perspective view of a continuous discrete thin film resistor for insulated substrate.Forming multiple tracks on an insulated substrate 10 is vertical indentation each other, promptly forms respectively from groove b
1, b
2, b
3, b
4, with horizontal groove a
1, a
2, a
3,, form two-way discrete array of thin film with manufacture method of the present invention in this two-way island array again on insulated substrate 10, to cut apart the structure that forms a two-way island array (bidirectional array ofislands).Among Fig. 1, the length on each island is L in the two-way island array on the insulated substrate 10, is preferably between 0.8-6.5mm; Width is W, is preferably between 0.4-3.5mm; And thickness is T, is preferably between 0.2-2.0cm.Yet,, also can use the insulated substrate that has other size in directions such as W, L and T instead if when desiring to form the discrete thin film resistor of irregular size or thin film resistor element with method of the present invention.
Please refer to Fig. 2, shown horizontal groove a
1, a
2, a
3, be the part indentation of the two-way island array that defines insulated substrate 10 shown in Figure 1.Horizontal groove a
1, a
2, a
3(and vertical groove b
1, b
2, b
3, b
4) in each indentation, its width on insulated substrate 10 is W, is preferably between 10-150 μ m; The degree of depth is t, and is preferable between 20-200 μ m; Section shape is preferably V-type, but has the indentation of other section shape, for example is that straight flange or flat bottomed recess pattern person also can.
Draw any method of indentation in the prior art, all can be applicable to the horizontal stroke of aforementioned dielectric substrate and the vertically formation of groove, for example utilize scriber (scribe) or other cutting tool of physics mode, also or use energy beam (energybeam) as etching methods such as laser beam, focused beam or focused ion beam.For the purpose of the present invention, provide the insulated substrate of the pre-indentation of tool, make it make a continuous discrete thin film wafers resistance and have many advantages, in successive process steps, set forth from the bidirectional thin resistor array that two-way island array forms.Though, also can be during the late stages of developmet again to 10 strokes of indentations of insulated substrate, for example after forming a conductor layer on the insulated substrate 10, form indentation again, but used insulated substrate 10 preferable being still of the inventive method are drawn indentation earlier in conductor layer forms before, so just can reach and conform with cost-effective manufacturing most.
Though there is no the material of concrete demonstration insulated substrate 10 in perspective view in Fig. 1 and the profile of Fig. 2, its insulation material has suitable insulating properties, be easy to draw to go up an indentation but should be, be easy to make the material of insulated substrate 10, and can be suitable for the fabrication process of follow-up film resistor, the customary insulation material that meets above-mentioned condition comprises the glass insulating material of high melting temperature and ceramic insulating material etc.In the middle of present embodiment, insulated substrate 10 is preferable should select a kind of ceramic insulation substrate of aluminium oxide that is for use, and wherein the composition of its aluminium oxide is about between the 94-99.6%.
In addition, the used insulated substrate 10 of the present invention needn't for commonly use with the little mode of shadow required the high polish surface.The high polish surface of commonly using, its surface roughness usually need less than 500 (peak separation from), and in preferred embodiment of the present invention, remove horizontal and groove longitudinally, and the surface roughness of insulated substrate 10 is preferable can be between 1000-3000 (peak separation from).
At last, though the profile of the perspective view of Fig. 1 and Fig. 2 does not show, in the embodiments of the invention method, before insulated substrate 10 forms conductor layers and resistive layer, preferablely should clean insulated substrate 10 earlier.Clean insulated substrate 10 in advance and be preferably under dry air (being that aqueous vapor is lower than 10ppm) environment,, carry out annealing in process (the about 5-20min of annealing in process) with 800-900 ℃ temperature.
Please refer to shown in Figure 3, be on insulated substrate 10, to form a flatness layer (leveling layer) 12, mainly act on the summary planarization and replenish the hole of insulated substrate 10, for example be with known any membrane deposition method, comprise the formed silicon dioxide (SiO of shallow plating (sputtering) method of the auxiliary vapour deposition method (thermal assisted evaporation) of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique (CVD), plasma enhanced chemical vapor deposition method and physical vapor deposition (PVD)
2) layer or silicon nitride (Si
3N
4) layer.Though forming the program of this flatness layer 12 is not absolute demand, but increase insulated substrate 10 flatnesses and reduce the substrate porosity to promote the quality of obtained discrete thin film resistor if consider, then in the method for the embodiment of the invention, be preferably flatness layer 12 with the about 100-5000 of shallow plating mode deposition of thick of physical vapour deposition (PVD).
Now please refer to shown in Figure 4, has: (1) forms upper conductor layer (upper conductor lead layer) 14a, 14b, 14c on the surface that flatness layer 12 exposes; And (2) form corresponding lower wire layer 16a, 16b, 16c on insulated substrate 10 bottom surface.Corresponding perspective view shown in Figure 13 can further be understood the pattern of the conductor layer of formation, and upper conductor layer 14a, 14b, 14c are discontinuous strip pattern, that is only forms respectively and span by vertical groove b
1, b
2, b
3, b
4The horizontal groove a of the island array of being separated
1, a
2, a
3On.In the methods of the invention, these pattern definition conductor layers 14a, 14b, 14c, 16a, 16b, 16c adopt a kind of mode of printing of non-little shadow photoetch to form.Though the non-little shadow photoetch print process of this kind can comprise the screen painting method of a non-little shadow photoetch and energy beam induction printing (energy beam induc ed print) method (for example laser beam of using gases conductor material (gaseous conductor precursor naterial) induction print process) of a non-little shadow photoetch, the screen painting method of the employed non-little shadow photoetch of preferred embodiment but of the present invention, be preferably with screen painting, again by comprising silver, silver alloy, gold, billon, copper, copper alloy, palladium (palladiun), palldium alloy, nickel, choose a conductor paste sintering (firing) in the conductor paste that nickel alloy is formed (conductor paste) and go out pattern definition conductor layer 14a, 14b, 14c, 16a, 16b, 16c.In addition, conductor paste is preferably under 400-900 ℃ of temperature, sintering 5-10min, and the thickness of coating is between 0.1-10 μ m.
Now please refer to shown in Figure 5, be to form a mask layer (mask) 18 to cover on insulated substrate 10 and pattern definition conductor layer 14a, 14b, the 14c, feasible part is used to form the insulated substrate surface of the resistive layer of follow-up formation, and can expose out with the upper conductor layer that the resistive layer of follow-up formation contacts.Corresponding perspective view shown in Figure 14 can further understand formation the pattern of mask layer, mask layer 18 only is formed on the vertical groove b of upper conductor layer 14a, 14b, 14c surface and insulated substrate 10
1, b
2, b
3, b
4Surface, the mask layer 18 of formation mainly are the patterns that is used for defining the resistive layer of follow-up formation, as long as therefore can cover the part that the resistive layer of the not follow-up formation of desire covers, are not limited to present embodiment mask layer pattern shown in Figure 14.In the methods of the invention, mask layer 18 also adopts a kind of mode of printing of non-little shadow photoetch to form, be preferably with the screen painting method, use the printing material to clean as available water or general olein, acetone equal solvent resin.
Now please refer to shown in Figure 6, is to form a thin film resistive layer 20 that covers in the surface, and it can use any resistance material in the known technology, comprises tantalum nitride (Ta
2N) resistance material, tantalum silicide resistance material, tantalum evanohm resistance material, each golden resistance material of nickel chromium triangle, chromium silicide constant resistance material or the high resistance material of more aforementioned resistance material ordinal number (order).Similarly, thin film resistive layer 20 also can utilize any Film forming method formation in the known thin film resistor manufacturing technology, comprise the auxiliary vapour deposition method of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique, the sedimentation that the sputtering method of plasma enhanced chemical vapor deposition method (PECVD) or physical vapour deposition (PVD) etc. is formed.In preferred embodiment of the present invention, formed thin film resistive layer 20 its thickness are preferably between 100-1000 .
Please refer to shown in Figure 7 at last, be that the part resistive layer that will cover on mask layer 18 and the mask layer is removed, to form the bidirectional thin resistive layer array of define pattern, wherein each pattern definition resistive layer 20a, 20b, 20c, the 20d in this bidirectional thin resistive layer array is placed in respectively, in the insulated substrate 10 in the island of horizontal groove and the formed two-way island array of vertical groove.Is to remove with ultrasonic waves or hairbrush and remove mask layer with the method that forms bidirectional thin resistive layer array, and employed removing solvent is olein, acetone equal solvent.
Form pattern definition lead 14a, 14b, 14c through screen painting and sintering conductor paste, 16a, 16b, 16c, and form after the pattern definition thin film resistive layer, be preferably insulated substrate 10 is carried out an annealing in process, make thin film resistive layer thermal resistance coefficient (Thernal Coefficient of Resistivity, TCR) stable.Be preferably temperature conditions annealing in process (the about 1-20hr of annealing in process) in 200-600 ℃.
Next how the further processing procedure of warp is to form discrete thin film wafers in explanation.
Please refer to shown in Figure 8ly, mainly is to carry out the pattern definition thin film resistive layer 20a on insulated substrate 10 each island, 20b, 20c, 20d are done finishing (trim), so that form the pattern definition thin film resistive layer of finishing.
Yet the mode that the present invention repairs above-mentioned pattern definition thin film resistive layer 20b has and differs from known skill.Known formation cut channel 22a, 22b, 22c be the single energy beam etching that utilizes traditional little shadow optical lithography or non-little shadow when 24a, 24b, 24c, and as described above, no matter all not good on cost and production efficiency traditional little shadow optical lithography is.Though use a kind of etching of non-little shadow photoetch, be preferably for example etching mode of laser beam, focused ion beam or focused beam of a kind of uses energy bundle, but all be to utilize the single energy bundle to finish the etching of cut channel, therefore for present embodiment, be heavily cover carry out six times the energy beam etching, cause the time of cost that production capacity can't be promoted.For solving this problem, the present invention adopts a kind of multi beam (multi-beam) energy etching mode finishing pattern definition thin film resistive layer, with regard to this preferred embodiment, if the energy beam etching that makes the apparatus three beam forms cut channel 22a, 22b, 22c respectively simultaneously and in time forms cut channel 24a, 24b, 24c then as long as implement twice.Utilize the multi beam energy, when for example using the laser beam etching, the energy beam number how much be to decide according to the resistance value height, resistance value heals, and the energy beam number needs the more when high, be preferably and use the laser of wavelength between 532-1064nm, the energy density that can throw beam is that beam diameter is 1.0-100 μ m in 0.1-8.0 watt, and the beam number is the laser beam of 1-31.
Now please refer to shown in Figure 9, again the pattern definition thin film resistive layer of repairing on insulated substrate 10 each island is done more accurate finishing (finetrim), to obtain more accurate resistance value, on the pattern definition thin film resistive layer 20a that repairs, 20b, 20c, 20d, respectively to form same cut channel 26a, 26b, 26c, 26d.The perspective view that is insulated substrate 10 parts after refine shown in Figure 15.
As shown in figure 15, form one in the insulated substrate 10 with a pair of vertical groove b
1, b
2With a pair of horizontal groove a
1, a
2The island of being defined then is formed with a pair of horizontal groove a that is formed on this island
1, a
2On, and with the contacted upper conductor 14a of pattern definition thin film resistive layer 20b, the 14b that have repaired, then form cut channel (kerf) 22a, 22b, 22c and 24a, 24b, 24c and the 26b etc. that insulated substrate 10b is exposed on the resistive layer 20b.As shown in the figure, constituted with spiral pattern through the pattern definition thin film resistive layer 20b of refine, reason is the adjustment that is easy to the controlling resistance value, and the lifting multiplying power of resistance value is higher.
Can adjust each other resistance value of bidirectional thin resistor array more subtly by refine, make the resistance value of the brilliant resistance wafer of discrete film that makes meet required.Be the etching that utilizes a kind of non-little shadow photoetch equally, for example laser beam, focused ion beam or focused electron beam energy etching mode are finished refine, be preferably a kind of wavelength of utilization between 532-1064nm, the every square centimeter of energy density that can throw beam dimensions is 0.1-8.0 watt, and beam diameter is the laser beam etching of 1.0-100 μ m.
Now please refer to shown in Figure 10, on whole surface, form pattern definition thin film resistive layer 20a, 20b, 20c, the pattern definition sealant 28a of 20d, 28b, 28c, the 28d of a corresponding finishing, so that pattern definition thin film resistive layer 20a, 20b, 20c, 20d are sealed up.These a little pattern definition sealant 28a, 28b, 28c, 28d can known thin film wafers resistance manufacturing skill in arbitrary encapsulant commonly used form, comprise epoxy radicals sealant (epoxy sealant), amido formate sealant (urethane sealant) and silicone encapsulant (siliconse alant) etc.With the generation type of aforementioned conductor layer, the pattern definition sealant 28a in the preferred embodiment of the present invention, 28b, 28c, 28d also can utilize a kind of print process of non-little shadow photoetch, but the preferable screen painting method that adopts non-little shadow photoetch that is still.As forming this pattern definition sealant 28a, 28b, 28c, the used sealant material of 28d, the preferable material that should select difficult decay (degradation) when in successive process steps, exposing insulated substrate for use.Especially pattern definition sealant 28a, 28b, 28c, 28d form the epoxy radicals sealant layer of the about 10-30 μ of thickness m preferably in the screen painting mode on insulated substrate 10.
Now please refer to shown in Figure 11, and it is divided into insulated substrate 10a, 10b, 10c, 10d and pattern definition conductor layer 14a, 14b, the 14c of some strips, the pattern definition conductor layer 14a that 16a, 16b, 16c are divided into two for the insulated substrate 10 of Figure 10
1, 14a
2, 14b
1, 14b
2, 14c
1, 14c
2With 16a
1, 16a
2, 16b
1, 16b
2, 16c
1, 16c
2Because the insulated substrate 10 that is provided forms the indentation that defines two-way island array already, so do not need to cut insulated substrate 10, just can comply with horizontal groove a again
1, a
2, a
3, its fracture is separated in the mode of physics.The fracture mode of this physics, be preferably insulated substrate 10 is fixed on earlier on the cylinder of the about 1-5cm of a radius, in this cylinder insulation is applied sufficient pressure with substrate 10 again, cause insulated substrate 10 minutes insulated substrate 10a, 10b, 10c, 10d into strips, and pattern definition conductor layer 14a, 14b, 14c, be divided into 14a
1, 14a
2, 14b
1, 14b
2, 14c
1, 14c
2, pattern definition lower wire layer 16a, 16b, 16c are divided into 16a
1, 16a
2, 16b
1, 16b
2, 16c
1, 16c
2Yet, do not limit the fracture mode of this kind physics, other any mode that insulated substrate can be separated all can adopt.
Please refer to shown in Figure 12ly at last, is to form totally three layers conductor layer on the corresponding both sides of strip insulated substrate 10b.Comprise: (1) a pair of pattern definition bridging conductor layer 30a, 30b, in order to the pattern definition upper conductor layer 14a of bridge joint correspondence
2, 14b
1With pattern definition lower wire layer 16a
2, 16b
1(2) in pattern definition bridging conductor layer 30a, 30b; And (3) are in pattern definition terminal conductor layer 32a, a pair of pattern definition weld layer of the last formation of 32b.Though three layers of above-mentioned conductor layer all can use any method of known making thin film wafers resistance skill and material to form respectively, but to pattern definition bridge conductor layer 30a, 30b, be preferably with a kind of screen painting method of non-little shadow photoetch and form, and with Fig. 4 step in to form the used method of pattern definition conductor layer similar or identical.Therefore, be preferably, choose a conductor paste sintering in the conductor paste that silver, silver alloy, gold, billon, copper, copper alloy, palladium, palldium alloy, nickel, nickel alloy forms and form pattern definition bridging conductor layer 30a, 30b by comprising again with screen painting.In addition, conductor paste is preferably under 150-350 ℃ of temperature, sintering 5-10min, and the thickness of coating is between 2-20 μ m.
Similarly, though pattern definition terminal conductor layer 32a, 32b, and pattern definition weld layer 34a, 34b can use any material of known making film resistor wafer skill to form, but with regard to embodiments of the invention, be preferably with nickel or nickel alloy and form pattern definition terminal conductor layer 32a, 32b, form pattern definition weld layer 34a, 34b with the terne metal that contains the about 5-50% of weight in addition, in the hybrid circuit microelectronic product, have best corrosion resistance and bond with the discrete thin film wafers resistance of obtaining formation.Moreover, though pattern definition terminal conductor layer 32a, 32b, and pattern definition weld layer 34a, 34b can use any method of known making thin film wafers resistance skill to form, form but be preferably with galvanoplastic, so that can allow pattern definition terminal conductor layer 32a, 32b in the mode of tool efficient, and pattern definition weld layer 34a, 34b have best corrosion resistance and bond in the hybrid circuit microelectronic product.
Though do not show among Figure 12 that strip insulated substrate 10b can be separated subsequently usually, so that form most discrete thin film wafers resistance.Be divided into the mode of strip insulated substrate 10b as insulated substrate 10, discrete thin film wafers resistance is preferable also to adopt similar mode to be told by strip insulated substrate 10b.Especially do not need to be preferably along having vertical groove, change with physics mode and fragment into prosperous of insulated substrate through cutting strip insulated substrate 10b.
Though show among Figure 12 that the some discrete thin film wafers resistance that is divided into by strip insulation board 10b comprises: elder generation or back form pattern definition terminal conductor layer 32a, 32b before forming upright insulated substrate wafer, with pattern definition weld layer 34a, 34b.Yet, in the good embodiment of reality of the present invention, be preferably after pattern definition bridging conductor layer 30a, 30b form, and before pattern definition terminal conductor layer 32a, 32b and pattern definition weld layer 34a, 34b form, strip insulated substrate 10b be divided into insulated substrate wafer with thin film resistor.Such process sequence can more effectively use non-little screen painting that influences photoetch to form pattern definition bridging conductor layer 30a, 30b, can avoid damaging to pattern definition terminal conductor layer 32a, 32b and pattern definition weld layer 34a, 34b simultaneously.
The present invention adopts and forms the process sequence that the line layer forms thin film resistive layer more earlier, the high temperature sintering when forming owing to the not anti-conductor of the resistance material that forms, thus form conductor layer earlier, so can be applicable to production than the thin film wafers resistance of low-resistance value.And (1) avoid processing procedure with little shadow photoetch method, material and device.(2) avoid using press polished insulated substrate; And (3) adopt multi beam energy processing procedure to carry out finishing process, to reach the method that the present invention could reduce production costs and improve production capacity.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (21)
1, a kind of manufacture method of thin film resistor is characterized in that, comprises the following steps:
One insulated substrate is provided;
Form a pattern definition (patterned) conductor layer in this insulated substrate;
Form a mask layer in this insulated substrate and this conductor layer surface, make the insulated substrate surface of part in order to the formation resistive layer, and can be exposed with the conductor layer that resistive layer electrically contacts;
Form a film resistor material in the exposed part of this insulated substrate, and electrically contact with this exposed conductor layer; And
Remove this mask layer, to form a pattern definition (patterned) thin film resistive layer.
2, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, wherein this insulated substrate is one of insulated substrate of forming for a glass insulation substrate and a ceramic insulation substrate.
3, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, wherein this insulated substrate is an aluminium oxide (alunina) ceramic insulation substrate, and its alumina composition is about 94%-99.6%.
4, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, more is contained in before wherein this conductor layer forms to form flatness layer (leveling layer) on this insulated substrate with this insulated substrate of planarization.
5, the manufacture method of thin film resistor as claimed in claim 4, it is characterized in that, wherein one of depositional mode of being formed for the shallow plating method of the auxiliary vapour deposition method of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method and physical vapour deposition (PVD) of the depositional mode of this flatness layer.
6, the manufacture method of thin film resistor as claimed in claim 4 is characterized in that, wherein this flatness layer is the insulating barrier that a silicon dioxide, silicon nitride are formed.
7, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, wherein this conductor layer is that mode of printing with a kind of non-little shadow photoetch forms discontinuous pattern.
8, the manufacture method of thin film resistor as claimed in claim 7, it is characterized in that wherein the mode of printing of this non-little shadow photoetch is one of mode of printing of being formed of screen painting (screenprint) and energy beam induction printing (energy beam induced print).
9, the manufacture method of thin film resistor as claimed in claim 7, it is characterized in that, wherein the mode of printing of this non-little shadow photoetch be utilization in the screen painting mode of a conductor paste, this conductor paste is one of conductor of forming of silver, silver alloy, gold, billon, copper, copper alloy, palladium (palladium), palldium alloy, nickel, nickel alloy.
10, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, wherein this mask layer is the mode of printing formation with a kind of non-little shadow photoetch.
11, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, wherein this film resistor material is to form in a kind of thin film deposition mode.
12, the manufacture method of thin film resistor as claimed in claim 11, it is characterized in that, wherein one of depositional mode of being formed for the shallow plating method of the auxiliary vapour deposition method of heat, the auxiliary vapour deposition method of electron beam, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method and physical vapour deposition (PVD) of this thin film deposition mode.
13, the manufacture method of thin film resistor as claimed in claim 11, it is characterized in that wherein this film resistor material layer is tantalum nitride resistance material, tantalum silicide resistance material, tantalum evanohm resistance material, nichrome resistance material, chromium silicide resistance material and one of high resistance material of being formed of more aforementioned resistance material ordinal number (order).
14, the manufacture method of thin film resistor as claimed in claim 1, it is characterized in that, wherein more be included in the step that this insulated substrate forms indentation, substrate wafer with definition one adjacent continuous on this insulated substrate, by being formed with this pattern definition thin film conductor layer resistive layer on this substrate wafer, make this substrate wafer form a thin film wafers resistance.
15, the manufacture method of thin film resistor as claimed in claim 14 is characterized in that, the step that wherein forms this indentation is to finish before this conductor layer forms.
16, the manufacture method of thin film resistor as claimed in claim 14 is characterized in that, the step that wherein forms this indentation is finished after this conductor layer forms.
17, the manufacture method of thin film resistor as claimed in claim 14 is characterized in that, wherein this adjacent films resistance wafer can need not cut off just and can be separated into one discrete (discrete) thin film wafers resistance by this insulated substrate in the physical rupture mode.
18, the manufacture method of thin film resistor as claimed in claim 1 is characterized in that, more comprises the following steps: after wherein removing this mask layer
Utilize multi beam (multi-beam) energy etching mode finishing (trim) this pattern definition thin film resistive layer of a kind of non-little shadow photoetch; And
Utilize this pattern definition thin film resistive layer of energy beam etching mode refine (finetrim) of a kind of non-little shadow photoetch, to adjust its resistance value.
19, the manufacture method of thin film resistor as claimed in claim 18, it is characterized in that wherein the employed energy beam of multi beam energy etching mode of this non-little shadow photoetch is one of multi beam energy etching mode of forming of laser beam, focused ion beam and focused beam.
20, the manufacture method of thin film resistor as claimed in claim 18, it is characterized in that, wherein the multi beam energy etching mode of this non-little shadow photoetch is to use ripple to be longer than 532-1064nm, the energy density of projection beam is 0.1-8.0 watt, beam diameter is 1.0-100 μ m, and the beam number is the laser beam of 1-31.
21, a kind of manufacture method of thin film resistor is characterized in that, comprises the following steps:
Provide a surface to form impressed insulated substrate;
Form a flatness layer in this insulated substrate;
Form a discontinuous pattern definition conductor layer in this insulated substrate;
Form a mask layer in this insulated substrate and this conductor layer surface, and make the insulated substrate surface of part in order to the formation resistive layer, and can be exposed with the conductor layer that resistive layer electrically contacts;
Form a film resistor material in the exposed part of this insulated substrate, and electrically contact with this exposed conductor layer;
Remove this mask layer, to form a pattern definition thin film resistive layer;
Multi beam energy etching mode finishing pattern definition thin film resistive layer with a non-little shadow photoetch; And
This pattern definition thin film resistive layer of energy beam etching mode refine with a non-little shadow photoetch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98119374 CN1248796A (en) | 1998-09-23 | 1998-09-23 | Method for making film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98119374 CN1248796A (en) | 1998-09-23 | 1998-09-23 | Method for making film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1248796A true CN1248796A (en) | 2000-03-29 |
Family
ID=5226354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98119374 Pending CN1248796A (en) | 1998-09-23 | 1998-09-23 | Method for making film resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1248796A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399102A (en) * | 2007-09-28 | 2009-04-01 | 贺利氏传感技术有限公司 | Sheath wire and sheet resistance |
| CN101162705B (en) * | 2006-10-13 | 2010-05-26 | 光环科技股份有限公司 | Multifunctional filmistor-electric capacity array |
| CN103441102A (en) * | 2013-08-23 | 2013-12-11 | 华东光电集成器件研究所 | Method for repairing thick film hybrid integrated circuit with ceramic thick film resistor unit |
| CN108987010A (en) * | 2018-07-10 | 2018-12-11 | 广东风华高新科技股份有限公司 | A kind of oil level resistor disc and its manufacturing method |
| CN109786055A (en) * | 2017-11-13 | 2019-05-21 | 德克萨斯仪器股份有限公司 | The Temperature-sensing resistor device and its manufacturing method constructed vertically |
-
1998
- 1998-09-23 CN CN 98119374 patent/CN1248796A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101162705B (en) * | 2006-10-13 | 2010-05-26 | 光环科技股份有限公司 | Multifunctional filmistor-electric capacity array |
| CN101399102A (en) * | 2007-09-28 | 2009-04-01 | 贺利氏传感技术有限公司 | Sheath wire and sheet resistance |
| CN103441102A (en) * | 2013-08-23 | 2013-12-11 | 华东光电集成器件研究所 | Method for repairing thick film hybrid integrated circuit with ceramic thick film resistor unit |
| CN103441102B (en) * | 2013-08-23 | 2015-08-26 | 华东光电集成器件研究所 | Ceramic thick film resistor device unit is utilized to repair the method for thick film hybrid integrated circuit |
| CN109786055A (en) * | 2017-11-13 | 2019-05-21 | 德克萨斯仪器股份有限公司 | The Temperature-sensing resistor device and its manufacturing method constructed vertically |
| CN109786055B (en) * | 2017-11-13 | 2022-05-10 | 德克萨斯仪器股份有限公司 | Vertically configured temperature sensing resistor and method of making same |
| CN108987010A (en) * | 2018-07-10 | 2018-12-11 | 广东风华高新科技股份有限公司 | A kind of oil level resistor disc and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100521860B1 (en) | Electronic component and its manufacturing method | |
| US4623751A (en) | Photovoltaic device and its manufacturing method | |
| US5254212A (en) | Method of fabricating electrostrictive-effect device | |
| JP2002515178A (en) | Manufacturing method of electronic multilayer device | |
| CN1459809A (en) | Metal insulating layer-metal capacitance structure and its manufacturing method | |
| RU97107096A (en) | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE | |
| CN1725396A (en) | Thin film multi-layered ceramic capacitor and method of manufacturing the same | |
| CN1518091A (en) | Manufacturing method of inlaid metal and its structure | |
| CN112864024A (en) | Ceramic circuit board and manufacturing method thereof | |
| CN1239318A (en) | Flatening method for forming dielectric layer between layers | |
| JPH02263445A (en) | Aluminum nitride substrate and semiconductor using same | |
| CN1248796A (en) | Method for making film resistor | |
| KR100652244B1 (en) | a Electrostatic Chuck with the elix-shape electrode and a method for manufacturing thereof | |
| US20050074627A1 (en) | Ceramic substrate for thin film electronic component, production method for the same and thin film electronic component using the same | |
| KR100807217B1 (en) | Ceramic component and Method for the same | |
| IL110431A (en) | Method of manufacturing a composite structure for use in electronic device and structure manufactured by said method | |
| US7180155B2 (en) | Method for manufacturing thin-film multilayer electronic component and thin-film multilayer electronic component | |
| US4632845A (en) | Process for the fabrication of thermal printing boards in multilayer thick-film technology | |
| CN1778993A (en) | High-precision dry etching method for thick aluminum | |
| CN1367531A (en) | Interlayer dielectric layer flatening method | |
| JP2002008939A (en) | Method of manufacturing ceramic body by selective coating | |
| JP4479302B2 (en) | Heater unit and apparatus equipped with the same | |
| TW379337B (en) | Method for fabrication of thin film resistor | |
| CN1166061A (en) | Method for making film resistance device | |
| JP3112460B2 (en) | Manufacturing method of aluminum nitride substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |