CN1166061A - Method for making film resistance device - Google Patents

Abstract

A method for manufacturing thin-film resistor includes providing insulating substrate, forming a thin-film resistance layer on the substrate, removing part of the resistance layer by ablation to form shaped thin-film resistor layer, and printing conducting leading wire. Or part of the resistance layer is removed after the conducting leading wire is formed. Or, the substrate is scratched before or after the thin-film resistance layer is formed to form connected but insulated chips, on which shaped thin-film resistor and leading wine are formed, and the chipsare separated physically from each other to obtain discrete thin-film resistor.

Description

The manufacture method of thin film resistor

The present invention relates to the manufacture method and the material of used thin film resistor in a kind of electronic products, refer in particular to can with effectively with conform with economic mode to the microelectronics goods, such as but not limited to the film resistor parts of hybrid circuit microelectronics goods, such as but not limited to the manufacture method and the material of used thin film resistor in the film resistor sheet.

Microelectronics manufacturing skill typical thin films resistance is as passive electric circuit element in the circuit and/or carries circuit elements.The thin resistor of film can be used to the microelectronics goods, includes but not limited in the circuit of integrated circuit microelectronics goods and hybrid circuit microelectronics goods.

As when being used among the integrated circuit microelectronics goods, the method of commonly using with present technique normally, on the semiconductor-based end, form insulation, again to the film resistor material cover layer that forms on the insulating barrier with the moulding of photoetch mode, thereby, form thin film resistor, and then each part at these semiconductor-based ends is separated, to form discrete integrated circuit (IC) wafer.Similarly, if when being used among the hybrid circuit microelectronics goods, the method of commonly using with present technique normally, to dielectric base, such as but not limited to the film resistor material cover layer that forms in glass insulation substrate and the ceramic insulation substrate with the moulding of photoetch mode, thereby, form thin film resistor, then, again each part of these dielectric base is separated, to form discrete film resistor wafer.

When forming the used thin film resistor of integrated circuit microelectronics goods or hybrid circuit microelectronics goods, correlation technique often is behind one film resistor material photoetch shape layer of formation, just repair each part of the photoetch shape layer of this film resistor material with the laser focusing light beam, so that make this film resistor material form the photoetch shape layer of finishing together and moulding, again by it form an integrated thin-film resistor in an integrated circuit (IC) wafer or a discrete thin film resistor in a discrete film resistor wafer thereafter.

Form discrete thin film resistor in dielectric base with the photoetch method of forming and laser reconditioning method, again dielectric base separated for the usage that form the discrete film resistor wafer that can in hybrid circuit microelectronics goods use thereafter, though become hybrid circuit microelectronics goods technology common usage, this usage is not without a doubt.When especially comparing with integrated circuit article technology, the latter is except one form film resistive layer of meeting formation in an integrated circuit, usually also can utilize the photoetch method of forming in this integrated circuit, to form some shape layers or shaping area in addition, so in forming hybrid circuit microelectronics goods, during used discrete film resistor wafer, utilize the formed shape layer of photo-engraving process often to have only: (1). one form film resistive layer; (2). a pair of moulding lead wire of conductor layer that contacts with this form film resistive layer.Therefore, when making discrete film resistor wafer, often photoetch device and material can not be used for forming discrete film resistor wafer effectively, so that can increase the manufacturing cost of these discrete thin film wafers at last.

On dielectric base, use photo-engraving process to form moulding thin film resistive layer and moulding lead wire of conductor layer, again these dielectric base separately formed the usage of discrete film resistor wafer thereafter, its another result is that dielectric base must improve its surface flatness and fineness usually, so that these dielectric base can correctly be alignd in the photoetch device of commonly using, subsequently, again with its moulding lead wire of conductor layer that forms the moulding thin film resistive layer and contact with these thin film resistive layers.Improve the flatness and the fineness of dielectric base, also can increase to commonly use the manufacturing cost that photoetch method and device form discrete film resistor wafer.

Therefore, the target that reaches is the formation method that a kind of discrete thin film resistor is provided, except it be can be used for the discrete film resistor wafer used in the hybrid circuit microelectronics goods, can also: (1). exempt photoetch method, the material of being commonly used with these discrete film resistor wafers of formation and install relevant manufacturing cost; (2). exempt and form discrete thin resistor for being used for dielectric base that discrete film resistor wafer commonly used in its surface flatness of raising manufacturing cost relevant with fineness.

In present technique, can find the design of all and thin film resistor and make relevant public technology, more modal film resistor material and these films resistance materials of use of all being meant are made the method for thin film resistor, wherein formed thin film resistor all shows and has given improvement and controlled character, such as but not limited to electrical sheet resistance, thermal resistance coefficient (TCR) and thermal stability etc.For further details, please refer to, for example: (1). award to the 4th, 042, No. 479 United States Patent (USP)s (the improved thin film resistor that forms with the tantalum nitride aluminium film resistor material) of people such as Yamazaki; (2). award to the 4th, 063, No. 211 United States Patent (USP)s (the improved thin film resistor that forms with silicon tantalum films resistance material) of people such as Yamazaki; (3). award to the 4th, 338, No. 145 United States Patent (USP)s (the improved thin film resistor that forms with tantalum evanohm film resistor material) of people such as Yamazaki; (4). award to the 4th, 510, No. 178 United States Patent (USP)s (the improved thin film resistor that forms with silicon tantalum/tantalum nitride membrane resistance material) of people such as Pau-lson; (5). award to the 5th, 023, No. 589 United States Patent (USP)s (closing the improved thin film resistor that film resistor material forms) of Hall with the gold doping nickel chromium triangle; (6). award to the 4th, 987, No. 010 patent of the U.S. (the improved thin film resistor that the platinum thin film resistance material that is coated with electricity slurry enhanced chemical vapor deposition (PECVD) super large forms) of people such as Krause.

The present invention also wants to find out other method and material, for forming the discrete thin film resistor that can in hybrid circuit microelectronics goods, use in the used discrete film resistor wafer, wherein except can forming these discrete thin film resistors, can also: (1). avoid adopting method, material and the device of various photoetchs; (2). avoid using press polished dielectric base; Reach aforementioned each target for asking, propose the present invention hereby, and possess following characteristic and effect.

1. can be used for a kind of film resistor parts used in the hybrid circuit microelectronics goods, in a kind of discrete film resistor wafer.

2. when forming discrete thin film resistor, can also avoid using various photoetch methods, material and device.

3. need not use press polished dielectric base just can form discrete thin film resistor.

4. the invention provides a kind of method that is easy to make discrete thin film resistor.

According to aforementioned each characteristic of the present invention, when implementing method of the present invention, be that a kind of dielectric base is provided earlier, utilize the thin film deposition method on this dielectric base, to form one the cover film resistive layer again, then, utilize a kind of non-photoetch ablation method to remove the some of this cover film resistive layer, so that in the aforementioned dielectric substrate, form one form film resistive layer, at last, utilize a kind of non-photoetch print process on this form film resistive layer, to form one moulding lead wire of conductor layer, perhaps, can be after forming moulding lead wire of conductor layer on the aforementioned cover film resistive layer, just the aforementioned part of this cover film resistive layer is removed, for forming aforementioned form film resistive layer, in addition, also can be to this dielectric base line before or after forming the cover film resistive layer on the aforementioned dielectric substrate, so that form a continuous dielectric base wafer, and form aforesaid form film resistive layer and moulding lead wire of conductor layer thereon, thereby in this dielectric base, form a continuous film resistor wafer, then, can utilize failure mode, under the situation that does not cut this dielectric base, tell aforesaid continuous film resistor wafer from this dielectric base, and form a discrete film resistor wafer.

The invention provides a kind of formation method of separating film resistor, for being used in a kind of thin film resistor parts, such as but not limited to a kind of discrete film resistor wafer used in the hybrid circuit microelectronics goods, wherein: (1). when forming this discrete thin film resistor, avoided adopting method, material and the device of various photoetchs; (2). when forming this discrete thin film resistor, do not use press polished dielectric base; Method of the present invention is utilization: (1). a kind of energy beam ablation method of non-photoetch forms one used discrete thin film resistor form film resistive layer from one cover film resistive layer according to this; (2). a kind of print process of non-photoetch so that form one used moulding lead wire of conductor layer in one thin film resistor on cover film resistive layer or form film resistive layer, thereby reaches aforementioned target; Because when utilizing method of the present invention in discrete thin film resistor, to form moulding resistive layer and moulding lead wire of conductor layer, can avoid adopting method, material and the device of various photoetchs, so when forming discrete thin film resistor, can avoid adopting press polished dielectric base; Therefore, the invention provides a kind of formation method of separating film resistor, for being used in a kind of thin film resistor parts, such as but not limited to a kind of discrete film resistor wafer used in the hybrid circuit microelectronics goods, wherein: (1). when forming this discrete thin film resistor, avoided adopting method, material and the device of various photoetchs; (2). when forming this discrete thin film resistor, do not use press polished dielectric base.

Method of the present invention is easy to make; Method of the present invention is used (1). a kind of energy beam ablation method of non-photoetch, form the form film resistive layer one from one cover film resistive layer according to this, for being used in the discrete thin film resistor, one used form film resistive layer in the discrete thin film resistor wherein arranged, and it was to utilize a kind of photo-engraving process and formed from one cover film resistance in the past; (2). a kind of print process of non-photoetch, so that on cover film resistive layer or the form film resistive layer that forms by this cover film resistive layer, form moulding lead wire of conductor layer one, a discrete thin film resistor is wherein arranged, and is to utilize a kind of photo-engraving process to be formed in the past equally; Non-photoetch energy beam ablation method and non-photoetch print process and the available material of institute thereof are generally known in the resistor manufacturing technology.Therefore, method of the present invention is easy to make.

Brief Description Of Drawings of the present invention is as follows:

Fig. 1-the 1st, the perspective view of a used line dielectric base in the preferable implementation method of the present invention.

Fig. 1-2～Fig. 7 is a succession of profile, demonstrates the result who utilizes the preferable implementation method of the present invention to form each procedure of processing of an a succession of discrete thin film resistor and a discrete film resistor wafer on insulating substrate shown in Fig. 1-1 respectively.

Fig. 8 is a perspective view, wherein has partly corresponding with profile shown in Figure 4.

Provide a preferred embodiment of the present invention according to Fig. 1-1～Fig. 8 below, and describe in detail, so that ins and outs of the present invention further are provided.

The invention provides a kind of formation method of separating film resistor, for being used in a kind of film resistor parts, such as but not limited to the used a kind of discrete film resistor wafer of various hybrid circuit microelectronics goods, wherein when forming this thin film resistor, can avoid: (1). adopt method, material and the device of various photoetchs; (2). use press polished dielectric base.Method of the present invention is utilization: (1). a kind of energy beam ablation method of non-photoetch forms one used discrete thin film resistor form film resistive layer from one cover film resistive layer according to this; (2). a kind of print process of non-photoetch, so that on cover film resistive layer or form film resistive layer, form one used moulding lead wire of conductor layer in one thin film resistor, thereby, reach aforementioned target; Because when utilizing method of the present invention in discrete thin film resistor, to form layout resistive layer and layout lead wire of conductor layer, can avoid adopting method, material and the device of various photoetchs, so, when forming discrete thin film resistor, just can avoid adopting press polished dielectric base; Similarly, when forming discrete thin film resistor,, thereby when forming discrete thin film resistor, can use the line dielectric base because method of the present invention avoids having adopted press polished dielectric base; Thin film resistor of the present invention is being made a kind of film resistor parts, during such as but not limited to a kind of discrete film resistor wafer, used the line dielectric base still can bring into play other advantage.

Though preferable implementation method of the present invention has illustrated how to form a discrete thin film resistor in a discrete film resistor wafer, for being used in the hybrid circuit microelectronics goods, but consummate present technique person all understands, and method of the present invention also can be used for forming the interior discrete film resistor wafer of the hybrid circuit microelectronics goods used discrete film resistor wafer of other film resistor parts in addition; Therefore, method of the present invention can be used to form various thin film resistors, for being used for resistance component, include but not limited to the discrete film resistor wafer in the hybrid circuit microelectronics goods, discrete film resistor array chip and discrete film resistor networking wafer use the film resistor parts with the formed discrete thin film resistor of method of the present invention, though be not to specialize in, all be to be used for making and to be used as surface adhering film resistor parts usually.

Now see also Fig. 1-1～Fig. 7, a succession of schematic diagram shown in it, demonstrate preferable implementation method of the present invention respectively and form in the process of a succession of discrete film resistor sheet, on a dielectric base, form the result in each stage of a succession of thin film resistor gradually; Be the perspective view of dielectric base before forming a succession of discrete thin film resistor shown in Fig. 1-1, then form a succession of discrete thin film resistor profile before shown in Fig. 1-2 for dielectric base.

Shown in the perspective view of Fig. 1-1, marking multiple tracks on a slice dielectric base 10 keeps the line of vertical direction (that is: to utilize horizontal line 11b ' each other, 11b "; 11b , 11b ' and 11b ", and vertical line 11a ', 11a " and 11a ),, on this two-way island array, form two-way discrete array of thin film with method of the present invention again so that in this dielectric base 10, form two-way island array; As Figure 1-1, each island in the two-way island array on the dielectric base 10, its width is W1, this width W 1 is usually and should be between 0.8～6.5 centimetre.Similarly, in addition as Figure 1-1, each island in the two-way island array on the dielectric base 10, its length then be L1, this length L 1 is usually and than should be between 0.4～3.5 centimetre; At last, as Figure 1-1, dielectric base 10 also has a thickness T 1, and this thickness T 1 usually and should be between 0.2～2.0 centimetre; Yet if when desiring to form the discrete thin film resistor of irregular size or film resistor parts with method of the present invention, method of the present invention also can be used instead at W1, and aspects such as L1 and T1 are the dielectric base of other size of tool in addition.

Now see also Fig. 1-2, the profile of the shown dielectric base that is Fig. 1-1 10.At a succession of vertical line 11a ' shown in Fig. 1-2,11a " and 11a ; define the some of the two-way island array in the dielectric base 10 shown in Fig. 1-1, " and 11a (and horizontal line 11b ' at this a succession of vertical line 11a ', 11a, 11b "; 11b , 11b ' and 11b " series) each line in, width on dielectric base 10 is W2, and this width W 2 should be between 10～150 microns.Similarly, the vertical line of this series 11a ', 11a " and 11a , (and horizontal line 11b ', 11b ", 11b , 11b ' and 11b " series) in each line, the degree of depth in dielectric base 10 then is T2, this degree of depth T2 is than should be between 20～200 microns; Shown in the profile of Fig. 1-2, this a succession of vertical line 11a ', 11a " and 11a (and horizontal line 11b ', 11b ", 11b , 11b ' and 11b " series) in each line, its section shape is preferably V-arrangement; but have the line of other section shape; such as but not limited to straight flange and flat groove type person, no matter in mode of the present invention or preferable enforcement method of the present invention, all can use.

Utilize wherein any method of the known ruling of dielectric base, all can on dielectric base, form these vertical and horizontal line, these methods include but not limited to utilize the actual method of scoring of scribing or other cutting tool, and utilize the ablation method that includes but not limited to laser beam, focused beam and focused ion beam and so on energy beam; If when wanting that formed bidirectional thin resistor array on the two-way island array in the dielectric base 10 made a succession of discrete film resistor wafer, had in this insulation wafer 10 vertical and laterally rule and concerning method of the present invention, have advantage; When on dielectric base 10, making the bidirectional thin resistor array, though can be during the late stages of developmet again to these dielectric base 10 line, for example but do not limit on dielectric base 10 next stage that forms one cover film resistive layer, but the used dielectric base 10 of method of the present invention is preferably given line earlier before forming the bidirectional thin resistor array on this dielectric base 10 being ready for, and so could reach the manufacturing of value-for-money with method of the present invention.

Though in the profile of the perspective view of Fig. 1-1 and Fig. 1-2 is not specifically to show, but dielectric base 10 should use a kind of insulating material to constitute, and form and this dielectric base 10 that this insulating material should have suitable insulating properties, be easy to rule, be easy to make dielectric base 10 must keep stable to degradation subsequently in the thin film resistor manufacture process; The common insulating material that meets these standards includes but not limited to glass insulating material and the ceramic insulating material that melting temperature is high; In preferable implementation method of the present invention, dielectric base 10 should be selected a kind of alumina-based ceramic dielectric base for use, and wherein the composition of aluminium oxide is between 96～99.6%; Yet other insulating material also can be used to form dielectric base 10.

Shown in the profile of the perspective view of Fig. 1-1 or Fig. 1-2, in the method for the invention, dielectric base 10 need commonly not used photo-engraving process required and used high polish surface usually when making the microelectronics goods; Used high polish surface in the microelectronics goods, its surface roughness are usually less than 500 dusts (peak-to-peak); In preferable implementation method of the present invention, to get rid of vertical and laterally line, the surface roughness of dielectric base 10 should be between 1000 to 3000 dusts (peak-to-peak).

At last, do not show though give in the perspective view of Fig. 1-1 or the cross section view of Fig. 1-2, but in preferable implementation method of the present invention, before forming the bi-directional discrete array of thin film on the two-way island array of dielectric base 10, should earlier this dielectric base 10 be cleaned.When cleaning this dielectric base 10 in advance, should be under the environment of dry air (being that moisture content is lower than 10ppm), with the temperature of 800～900 degree Celsius, 5～30 minutes time of annealing in process.

Now see also the profile of Fig. 2, shown in it is the result of dielectric base 10 after further processing of Fig. 1-2; Fig. 2 is a profile of dielectric base shown in Fig. 1-2 10, but forms a cover film resistive layer 12 in its surface in addition; This cover film resistive layer 12 can form with the known wherein any resistance material of thin film resistor manufacturing process, includes but not limited to the alloy of tantalum nitride resistance material, silicon tantalum resistance material, tantalum evanohm resistance material, nichrome resistance material, silicon chromium resistance material and the higher ordinal number of aforementioned resistance material; Similarly, cover film resistive layer 12 also can be formed with the known wherein any thin film deposition method of film resistor manufacturing technology, include but not limited to hot assisted evaporative method, electron beam assisted evaporative method, chemical vapor deposition method (CVD), electricity slurry enhanced chemical vapor deposition (PECVD) method, and physical vapor deposition (PVD) sputtering method.In preferable implementation method of the present invention, formed cover film resistive layer 12 on dielectric base 10, its thickness should be between 0.05～1.0 micron.

Now see also the profile of Fig. 3, shown in it is the result of dielectric base 10 after further processing of Fig. 2; Have as can be seen from Figure 3: (1). formed a succession of moulding upper conductor trace layer 14a ' on the exposed surface that covers resistive layer 12,14a ", 14b ', 14b " and, 14c ', 14c ", 14d ' and 14d "; And (2) are at the moulding lower conductor trace layer 16a ' that covers formed a succession of correspondence on the lower surface of resistive layer 12,16a ", 16b ', 16b ", 16c ', 16c " and, 16d ' and 16d "; In the method for the invention, this a succession of moulding upper conductor trace layer 14a ', 14a ", 14b ', 14b " and, 14c ', 14c ", 14d ' and 14d "; And moulding lower conductor trace layer series 16a ', 16a ", 16b ', 16b " and, 16c ', 16c ", 16d ' and 16d "; The two all is to adopt a kind of print process of non-photoetch to form; Though these non-photoetch print processes can include but not limited to non-photoetch screen painting method and non-photoetch energy beam induction print process (such as but not limited to the laser beam induction print process of utilization gaseous conductor fertile material), a kind of non-photoetch screen painting method used of preferable implementation method of the present invention but, should use earlier screen painting, to include but not limited to silver again, silver alloy, gold, billon, copper, copper alloy, palladium, palldium alloy, nickel, selected a kind of conductor paste sintering in the conductor paste group of nickel alloy and form a succession of moulding upper conductor trace layer 14a ', 14a "; 14b '; 14b ", 14c ', 14c ", 14d ' and 14d "; And a succession of moulding lower conductor trace layer 16a ', 16a ", 16b ', 16b " and, 16c ', 16c ", 16d ' and 16d "; This conductor paste usually and should be under the temperature conditions of 400～600 degree Celsius, 5～10 minutes time of sintering.In addition, conductor paste applied thickness when being preferably sintering, ", 14b ', 14b " at this a succession of moulding upper conductor trace layer 14a ', 14a, 14c ', 14c ", 14d ' and 14d "; And this a succession of moulding lower conductor trace layer 16a ', the thickness of each the moulding conductor layer among 16a ", 16b ', 16b ", 16c ', the 16c ", 16d ' and 16d " is between 8～10 microns.

Through screen painting and a succession of moulding upper conductor trace layer 14a ' that the conductor paste sintering is formed, 14a ", 14b ', 14b ", 14c ', 14c " and, 14d ' and 14d "; And a succession of moulding lower conductor trace layer 16a ', 16a "; 16b ', 16b ", 16c ', 16c "; 16d ' and 16d " afterwards, then should allow dielectric base 10 carry out thermal anneal process, make the thermal resistance coefficient (TCR) of cover film resistive layer 12 stable, this dielectric base 10 should be under the temperature conditions of 200～600 degree Celsius, 1～20 hour time of annealing in process.

Consummate technology and technology person all understand, and the conductive paste of screen printing can form a succession of moulding upper conductor trace layer 14a ', 14a through sintering ", 14b ', 14b ", 14c ', 14c " and, 14d ' and 14d "; And a succession of moulding lower conductor trace layer 16a ', 16a "; 16b '; 16b ", 16c ', 16c "; 16d ' and 16d ", if this moment is identical with suitable part condition and the demand of thermal annealing, so, can be simultaneously with dielectric base 10 annealing and make the thermal resistance coefficient (TCR) of cover film resistive layer 12 stable.

Now see also the profile of Fig. 4, shown in it is the result of dielectric base 10 after further processing of Fig. 3; Following as can be seen from Figure 3 processing result: (1). cover film resistive layer 12 is given moulding and form a bidirectional thin resistive layer array, wherein each the form film resistive layer in this bidirectional thin resistive layer array is to be placed in the island of vertical line in the dielectric base 10 and the formed two-way island array of horizontal line; (2). the form film resistive layer on finishing dielectric base 10 each island, so that form the thin film resistive layer 12a ' of a series of finishings and moulding, 12a "; 12b ', 12b ", 12c ', 12c "; 12d ' and 12d ", that shown in Figure 8 is the perspective view of dielectric base 10 somes of method formation according to this, comprising moulding upper conductor trace layer 14a ' and 14a ".

As shown in Figure 8, dielectric base 10 ' within formed one with island that a pair of horizontal line and a pair of vertical line defined, on this island, then form one thin film resistive layer 12a through finishing and moulding, this resistive layer 12a is provided with a succession of perforation breach 13a that dielectric base 10 is exposed, 13b and 13c, other has that to forming moulding upper conductor trace layer 14a ' and 14b ' thereon; As shown in Figure 8, formed with spiral pattern, be easy to adjust this resistance through the thin film resistive layer 12a of finishing and moulding through the thin film resistive layer 12a of finishing and moulding.

Similarly, for forming a succession of moulding upper conductor trace layer 14a ', 14a "; 14b ', 14b ", 14c ', 14c ", 14d ' and 14d ", and a succession of moulding lower conductor trace layer 16a ', 16a "; 16b ', 16b ", 16c ', this non-photoetch print process of 16c "; 16d ' and 16d " can be used to that cover film resistive layer 12 shown in Figure 3 is given moulding and repairs (or finishing reshaping) earlier again, so that utilize a kind of ablation method of non-photoetch to form as shown in Figure 4 a succession of finishing and form film resistive layer 12a ', 12a "; 12b ', 12b ", 12c ', 12c ", 12d ' and 12d ".The ablation method of this non-photoetch is preferably a kind of uses energy beam, such as but not limited to the non-photoetch energy beam ablation method of laser beam, focused ion beam or focused beam; Especially, this non-photoetch energy beam ablation method preferably uses a kind of wavelength between 532～1064nm, the laser beam of the energy density of every square centimeter of projecting beam size between 0.1～10 watt; In that being given moulding, cover film resistive layer 12 forms when the thin film resistive layer of moulding is serial, the width of laser beam should be between 30～200 microns, form a succession of finishing and form film resistive layer 12a ' at this a succession of form film resistance of finishing in addition, 12a "; 12b ', 12b ", 12c ', 12c ", 12d ' and 12d "; The time, the laser beam diameter should be between 10～100 microns.

Consummate present technique person all understands, section dielectric base 10 as shown in Figure 4 also can utilize with aforementioned preferable implementation method of the present invention in the another kind of order of the thin film resistor fabrication schedule that proposed to form, especially, though the disclosed content of preferable implementation method of the present invention is to be formed into earlier a succession of moulding upper conductor trace layer on a cover film resistive layer, then again this cover film resistive layer is given moulding and finishing, for the thin film resistive layer that forms a succession of finishing and moulding, but as earlier the cover film resistive layer being given moulding and/or finishing with method of the present invention, again at the form film resistive layer, the finishing thin film resistive layer, or form a succession of moulding upper conductor trace layer on finishing and the form film resistive layer, also can form thin film resistor with identical function; Method of the present invention does not have strict requirement for following processing sequence: (1). the moulding of cover film resistive layer; (2). the finishing of cover film resistive layer; (3). the formation of moulding upper conductor trace layer and lower conductor trace layer.

Now see also the profile of Fig. 5, shown in it is the result of dielectric base 10 after further processing of Fig. 4; All the dielectric base 10 with Fig. 4 is identical in others for the dielectric base 10 of Fig. 5, but its whole surface has formed a succession of and finishing and form film resistive layer 12a '/12a "; 12b '/12b ", the a part of corresponding super large coated and molded sealant layer 18a of 12c '/12c " and 12d '/12d ", 18b, 18c and 18d are so that with these finishing and form film resistive layer 12a '/12a "; 12b '/12b ", these of 12c '/12c " and 12d '/12d " are partly sealed.These super large cloth of coating-type moulding sealant layers 18a, 18b, 18c and 18d can be formed with any encapsulant of being used always in the film resistor wafer fabrication, include but not limited to epoxy sealent, carbamate sealant and silicone sealant etc.; In preferable implementation method of the present invention, with aforementioned a succession of moulding upper conductor trace layer 14a ', 14a ", 14b ', 14b ", 14c ', 14c " and, 14d ' and 14d "; And a succession of moulding lower conductor trace layer 16a ', 16a "; 16b '; 16b ", 16c ', 16c ", 16d ' and 16d " similar, these super large cloth of coating-type moulding sealant layers 18a, 18b, 18c and 18d also can utilize a kind of non-photoetch print process, but should be formed with a kind of non-photoetch stencil printing, for forming this kind super large cloth of coating-type moulding sealant layer 18a, 18b, the sealant material that 18c and 18d are used should be selected for use when allowing dielectric base expose carrying out subsequent process steps, is difficult for taking place the material of degradation; Especially, these super large cloth of coating-type moulding sealant layers 18a, 18b, 18c and 18d preferably form with the epoxy sealing agent material that prints off with the screen painting mode on dielectric base 10, so that make these super large cloth of coating-type moulding sealant layers 18a, 18b, 18c and 18d respectively have 10～30 microns thickness.

See also the profile of Fig. 6, shown in it is the result of dielectric base 10 after further processing of Fig. 5; The profile of Fig. 6 and broadly similar shown in Figure 5, but dielectric base 10 wherein also has been divided into some dielectric base bar 10a, 10b, 10c and 10d are because there is the vertical line 11a ' of the some that defines each island in this dielectric base 10,11a "; and 11a , so need not cut this dielectric base 10, just can utilize the physics failure mode that it is separately formed dielectric base bar 10a; 10b, 10c and 10d.This physics failure mode, suitable first dielectric base 10 is fixed on about 1～5 centimeter cylinder of radius, on this cylinder, dielectric base 10 is applied sufficient pressure again, so that cause that this kind physics breaks, yet other can be divided into dielectric base 10 dielectric base bar 10a, 10b, the mode of 10c and 10d all can adopt.

See also the profile of Fig. 7, shown in it is the result of dielectric base bar 10a after further processing of Fig. 6; Fig. 7 is the profile of the dielectric base bar 10a of Fig. 6, but in a pair of opposite edges of this dielectric base bar 10a, on each edge, all form a succession of conductor layer in totally three roads, three road formula conductor layers of this two consecutive comprise: (1). a pair of moulding bridge conductor trace layer 20a ' and 20a "; for being bridged to corresponding moulding upper conductor trace layer 14a ' or 14a ", moulding lower conductor trace layer 16a ' and 16a with correspondence ", (2). the moulding bridge conductor trace layer 20a ' of correspondence and 20a " on form a pair of forming terminal conductor layer 22a ' and 22a "; And (3). at this to forming terminal conductor layer 22a ' and 22a " on a pair of moulding weld layer that forms.Though each conductor layer of three road formula conductor layers of aforementioned that two consecutive can form with film resistor wafer fabrication known any method and material, but this is to moulding bridge conductor trace layer 20a ' and 20a " should form with a kind of non-photoetch screen painting method; and this screen painting method and that are to moulding upper conductor trace layer 14a ' and 14a ", and that is to moulding lower conductor trace layer 16a ' and 16a " used non-photoetch screen painting method is similar or identical; Therefore, should use screen painting, to include but not limited to silver again, silver alloy, gold, billon, copper, copper alloy, palladium, palldium alloy, nickel, selected a kind of conductor paste sintering in the conductor paste group of nickel alloy and form this kind moulding bridge conductor trace layer 20a ' and 20a "; this conductor paste is usually and should be under the temperature conditions of 400～600 degree Celsius; 5～10 minutes time of sintering; in addition; conductor paste applied thickness when being preferably sintering, can form 5～20 microns thickness at that to moulding bridge conductor trace layer 20a ' and 20a " in respectively this moulding bridge conductor trace layer 20a ' and 20a " is principle.

Similarly, any material that can form these forming terminal conductor layers and moulding weld layer during the discrete film resistor wafer of the available manufacturing of though forming terminal conductor layer 22a ' and 22a "; and moulding weld layer 24a ' and 24a " forms, but with regard to preferable implementation method of the present invention, should form moulding terminal conductor layer 20a ' and 20a with nickel or nickel alloy conductor material "; form moulding weld layer 24a ' and 24a with the terne metal welding material in addition ", this material wherein should contain 5～50% plumbous composition if be as the criterion with weight.Use nickel or nickel alloy material to form moulding terminal conductor layer 20a ' and 20a "; and use the terne metal welding material to form moulding weld layer 20a ' and 24a ", can allow discrete film resistor wafer in hybrid circuit microelectronics goods, have best corrosion resistance and caking property usually.Similarly, any method that can form these forming terminal conductor layers and moulding weld layer during the discrete film resistor wafer of the available manufacturing of though forming terminal conductor layer 22a ' and 22a "; and moulding weld layer 24a ' and 24a " forms, but should form with galvanoplastic, so that can allow forming terminal conductor layer 22a ' and 22a in the mode of tool efficient ", and moulding weld layer 24a ' and 24a " have best corrosion resistance and caking property in hybrid circuit microelectronics goods.

Though not giving tool among Fig. 7 originally shows; but dielectric base bar 10a can be separated subsequently usually; so that form a succession of discrete dielectric base wafer from this dielectric base bar 10a; and also form a succession of discrete thin film resistor as shown in Figure 7 on it; thereby form a succession of discrete film resistor wafer; be divided into dielectric base bar 10a as dielectric base 10; these discrete dielectric base wafers also should adopt similar method to be divided into by dielectric base bar 10a; especially; need not cut dielectric base bar 10a, should use the physics failure mode instead along remaining horizontal line is divided into the dielectric base wafer with this dielectric base bar 10a.

Do not show though give specifically among Fig. 7, but dielectric base bar 10a can be divided into some discrete film resistor wafers, these film resistor wafers comprise some discrete dielectric base wafers again, and also be formed with some discrete thin film resistors on it, it is formed before or after these thin film resistors are to form that to forming terminal conductor layer 22a ' and 22a on dielectric base wafer 10a ", and that is to moulding weld layer 24a ' and 24a ".In preferable implementation method of the present invention, should utilize non-photoetch screen painting method to form moulding conductor electric bridge layer 20a ' and 20a " afterwards; and utilize galvanoplastic formation moulding terminal conductor layer 22a ' and 22a " and moulding weld layer 24a ' and 24a " before; dielectric base bar 10a is divided into a succession of dielectric base wafer that has been formed with a succession of thin film resistor on it; in preferable implementation method of the present invention, should take this processing sequence; " so that can more effectively use non-photoetch screen painting method to form moulding bridge conductor trace layer 20a ' and 20a, avoid damageeing forming terminal conductor layer 22a ' and 22a simultaneously ", and moulding weld layer 24a ' and 24a ".

When insulation strip 10a shown in Figure 7 being divided into a discrete dielectric base wafer that is formed with a discrete thin film resistor on it, be and utilize method of the present invention to form a kind of discrete film resistor wafer that is available among the hybrid circuit microelectronics goods, when forming this discrete film resistor wafer, be in (1). avoid using under the situation of photoetch method, material and device forming discrete film resistor wafer; (2). avoid using under the situation of high polish dielectric base forming discrete film resistor wafer.

Above illustrated embodiment only in order to explanation the present invention, rather than is used for limiting the scope of the invention.Such as consummate the inventive method person does not disobey many variations and the modification that spirit of the present invention is engaged in, and all belongs to the scope of the present patent application patent.

Claims (22)

1. the formation method of a thin film resistor, it comprises:

A kind of dielectric base (10) is provided;

On said dielectric base (10), utilize a kind of thin film deposition method to form one cover film resistive layer (12);

Utilize a kind of non-photoetch energy beam ablation method to remove the some of said cover film resistive layer (12), so that go up formation one form film resistive layer (12a) in said dielectric base (10); And

Utilize a kind of non-photoetch print process to go up and form one moulding lead wire of conductor layer (16a) at said form film resistive layer (12a).

2. the formation method of thin film resistor according to claim 1 is characterized in that said dielectric base (10) is selected a kind of dielectric base (10) from the group of glass insulation substrate and ceramic insulation substrate formation.

3. the formation method of thin film resistor according to claim 1 is characterized in that said cover film resistive layer (12) is that a kind of resistance material of selecting for use forms from the group that the higher ordinal number alloy of tantalum nitride resistance material, silicon tantalum resistance material, tantalum evanohm resistance material, nichrome resistance material, silicon chromium resistance material and aforementioned resistance material constitutes.

4. the formation method of thin film resistor according to claim 1 is characterized in that said non-photoetch energy beam ablation method is selected a kind of ablation method from the group that laser beam ablation method, focused beam ablation method and focused ion beam ablation method constitute.

5. the formation method of thin film resistor according to claim 1 is characterized in that said non-photoetch print process is selected a kind of print process from the group of screen painting method and energy beam induction print process formation.

6. the formation method of thin film resistor according to claim 1, it is characterized in that said non-photoetch print process is the screen painting method of a kind of conductor paste of utilization, this conductor paste then is select for use from the group that silver, silver alloy, gold, billon, copper, copper alloy, palladium, palldium alloy, nickel, nickel alloy conductor paste constitute a kind of.

7. the formation method of thin film resistor according to claim 1, its feature also is to comprise rules said dielectric base (10), so that in this dielectric base (10), form a continuous base wafer, and form said form film resistive layer (12a) and moulding lead wire of conductor layer (16a) on the base wafer that should link to each other, thereby form the continuous film resistor wafer of a slice by this continuous base wafer.

8. the formation method of thin film resistor according to claim 7 is characterized in that said dielectric base (10) is to form said cover film resistive layer (12) to be rule earlier before on this insulating substrate.

9. the formation method of thin film resistor according to claim 7 is characterized in that said dielectric base (10) is to form said cover film resistive layer (12) just to be rule afterwards on this insulating substrate.

10. the formation method of thin film resistor according to claim 7, it is characterized in that said continuous film resistor wafer is to tell from this insulating substrate with the physics failure mode of said insulating substrate, thereby under the situation that need not cut this insulating substrate, form the discrete film resistor wafer of formation a slice of thin film resistor.

11. the formation method of thin film resistor according to claim 1, it is characterized in that said thin film resistor be formed a kind of by the film resistor wafer, selected a kind of film resistor parts in the film resistor parts group that film resistor array chip and film resistor networking wafer constitute.

12. the formation method of a thin film resistor, it comprises:

A kind of dielectric base (10) is provided;

Go up formation one cover film resistive layer (12) in said dielectric base (10);

Utilize a kind of non-photoetch print process on said form film resistive layer, to form one moulding lead wire of conductor layer (16a); And

Utilize a kind of non-photoetch energy beam ablation method to remove the some of said cover film resistive layer (12), so that on said dielectric base, form one form film resistive layer (12a).

13. the formation method of thin film resistor according to claim 12 is characterized in that said dielectric base (10) is selected a kind of dielectric base (10) from the group of glass insulation substrate and ceramic insulation substrate formation.

14. the formation method of thin film resistor according to claim 12 is characterized in that said cover film resistive layer (12) is that a kind of resistance material of selecting for use forms from the group that the higher ordinal number alloy of tantalum nitride resistance material, silicon tantalum resistance material, tantalum evanohm resistance material, nichrome resistance material, silicon chromium resistance material and aforementioned resistance material constitutes.

15. the formation method of thin film resistor according to claim 12 is characterized in that said non-photoetch print process is selected a kind of print process from the group of screen painting method and energy beam induction print process formation.

16. the formation method of thin film resistor according to claim 12, it is characterized in that said non-photoetch print process is the screen painting method of a kind of conductor paste of utilization, this conductor paste then is select for use from the group that silver, silver alloy, gold, billon, copper, copper alloy, palladium, palldium alloy, nickel, nickel alloy conductor paste constitute a kind of.

17. the formation method of thin film resistor according to claim 12 is characterized in that said non-photoetch energy beam ablation method is selected a kind of ablation method from the group that laser beam ablation method, focused beam ablation method and focused ion beam ablation method constitute.

18. the formation method of thin film resistor according to claim 12, its feature also is also to comprise rules said dielectric base (10), so that in this dielectric base (10), form a continuous base wafer, and form said form film resistive layer and moulding lead wire of conductor layer on the base wafer that should link to each other, thereby form the continuous film resistor wafer of a slice by this continuous base wafer.

19. the formation method of thin film resistor according to claim 18 is characterized in that said dielectric base (10) is to form said cover film resistive layer (12) to be rule earlier before on this insulating substrate.

20. the formation method of thin film resistor according to claim 18 is characterized in that said dielectric base (10) is to form said cover film resistive layer (12) just to be rule afterwards on this insulating substrate.

21. the formation method of thin film resistor according to claim 18, it is characterized in that said continuous film resistor wafer is to tell from this insulating substrate with the physics failure mode of said insulating substrate, thereby under the situation that need not cut this insulating substrate, form the discrete film resistor wafer of a slice.

22. the formation method of thin film resistor according to claim 12, it is characterized in that said thin film resistor be formed a kind of by the film resistor wafer, selected a kind of film resistor parts in the film resistor parts group that film resistor array chip and film resistor networking wafer constitute.

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