CN1227730C - Processing method of nano level saphire substrate and its special polishing liquid - Google Patents
Processing method of nano level saphire substrate and its special polishing liquid Download PDFInfo
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- CN1227730C CN1227730C CNB031143504A CN03114350A CN1227730C CN 1227730 C CN1227730 C CN 1227730C CN B031143504 A CNB031143504 A CN B031143504A CN 03114350 A CN03114350 A CN 03114350A CN 1227730 C CN1227730 C CN 1227730C
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Abstract
The present invention relates to a processing method of a sapphire substrate used for a tube core of a high-brightness light-emitting diode (HB-LED), which belongs to the technical field of processing methods of semiconductor devices. The present invention also relates to a polishing liquid especially used for the processing method of the sapphire substrate used for a tube core of a high-brightness light-emitting diode (HB-LED), wherein the processing method of the sapphire substrate is composed of the steps of sheet sticking, coarse grinding, fine grinding, coarse polishing and fine polishing; the nano polishing liquid is composed of nano silicon powder, glycol, glycerol, ethanolamine and deionized water. When the processing steps and the nano polishing liquid are matched for used, the sapphire substrate has the advantages of high surface smoothness, low surface roughness, stress elimination and mirror polish effect, and thus, a cutter has the advantages of low loss, long service life, low production cost and high qualification rate of products. In addition, compared with common micrometer polishing liquids, the nano polishing liquid can greatly shorten a polishing period, and thus, the purpose of raising labor productivity is achieved.
Description
Technical field:
The present invention relates to the processing method technical field of semiconductor device, the processing method of the Sapphire Substrate that especially a kind of high-brightness blue light-emitting diode (HB-LED) tube core is used.
Background technology:
High brightness LED because have the electro-optical efficiency height, advantage such as power consumption is low, the life-span is long, shock-resistant (no filament), luminescent spectrum monochrome performance is good, visual performance is good and can work in adverse circumstances and being used widely at the industry-by-industry of national economy.In high brightness LED, tube core is again one of most important device of using as luminous, demonstration etc.Present a kind of blue high brightness LED newly developed, the processing method of its tube core is at first to utilize the epitaxial structure of MOCAD technology growth CaN system on Sapphire Substrate, afterwards, the Sapphire Substrate of long good device is carried out attenuated polishing, at last, adopt scribing, sliver technology to be cut to required tube core again.Because the thickness and the surface smoothness (fineness, transparency) of Sapphire Substrate are the key factors that influences rate of finished products, simultaneously also will directly have influence on the life-span of scribing machine and diamond cutter, therefore, before cutting, the thickness of Sapphire Substrate and surface smoothness controlled and just seem extremely important.But at present, Sapphire Substrate had only attenuate and two rough steps of polishing before cutting, and, used polishing fluid is common micron order polishing fluid in polishing process, make that not only process time is longer, and the surface smoothness of the Sapphire Substrate that obtains poor (generally more than 40 nanometers), fineness are also bad, do not reach mirror effect.Cause the life-span of the rate of finished products of follow-up cutting technique and incisory diamond cutter all lower, increased the production cost of producer.
Summary of the invention:
Purpose of the present invention proposes a kind of processing method that can obtain any surface finish, stressless Sapphire Substrate with regard to being at the weak point of the processing method of existing Sapphire Substrate.
For realizing purpose of the present invention, the Sapphire Substrate processing method may further comprise the steps: 1. and bonding die, according to the characteristics of Sapphire Substrate, utilize bonding die equipment longly to have the one side of device to stick on the sheet glass it, so that vacuum suction guarantees the stability of die bonding on bistrique when grinding; 2. corase grind is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, utilize kibbling mill with the thickness of Sapphire Substrate by 330～450 microns be thinned to about 120 microns, roughness is about 2.0 microns; 3. fine grinding is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, and utilizing atomizer mill is about 0.5 micron with Sapphire Substrate by 120 microns reduced thickness to 90～95 micron, roughness, and thickness evenness is in 2.0 microns; 4. thick the throwing is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, to utilize thick throwing machine and nanometer burnishing liquid that Sapphire Substrate is polished, and its roughness is reached about 0.1 micron, and the uniformity of thickness is in 1.0 microns; 5. smart the throwing is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, to utilize precision polisher and nanometer burnishing liquid that Sapphire Substrate is polished, and makes the surface roughness of Sapphire Substrate reach that 20 nanometers are following, mirror effect, unstressed.
Described nanometer burnishing liquid is made of nano silica fume, ethylene glycol, glycerine, ethanol ammonia and deionized water, its pH value is between 9～11, wherein, the content of nano silica fume is 20～25%, ethylene glycol is 8～15%, glycerine is 3～5%, and ethanol ammonia is 0.1～0.3%, and deionized water is 60～65%.
When above-mentioned procedure of processing and nanometer burnishing liquid are used, can improve greatly Sapphire Substrate surface smoothness, reduce its surface roughness, eliminate stress, reach the mirror finish effect, thereby reduce the cutter loss, improve the useful life of cutter, save production cost and improve the qualification rate of product.In addition, nanometer burnishing liquid is compared with common micron order polishing fluid, also can shorten polishing cycle greatly, from and reach the purpose of raising labour productivity.
Description of drawings:
The present invention is described further below in conjunction with accompanying drawing:
Accompanying drawing 1 is the processing process figure of Sapphire Substrate
Accompanying drawing 2 is under the different polishing fluid conditions, the surface roughness of Sapphire Substrate and the relation curve of polishing time
Embodiment:
See that shown in the accompanying drawing 1, the procedure of processing of Sapphire Substrate is as follows:
1.wafer the sheet bonding die according to the characteristics of Sapphire Substrate, utilizes bonding die equipment long to have the one side of device to stick on the sheet glass it, so that vacuum suction guarantees the stability of die bonding on bistrique when grinding;
2. corase grind is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, utilize kibbling mill with the thickness of Sapphire Substrate by 330～450 microns be thinned to about 120 microns, roughness is about 2.0 microns;
3. fine grinding is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, utilize atomizer mill with Sapphire Substrate by about 120 microns reduced thickness to 90～95 micron, roughness is about 0.5 micron, thickness evenness is in 2.0 microns;
4. thick the throwing is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, to utilize thick throwing machine and nanometer burnishing liquid that Sapphire Substrate is polished, and its roughness is reached about 0.1 micron, and the uniformity of thickness is in 1.0 microns;
5. smart the throwing, at pressure is 1.5Kg～4.5Kg, temperature is under 22 ℃ ± 2 ℃ the condition, to utilize precision polisher and nanometer burnishing liquid that Sapphire Substrate is polished, and makes that the surface roughness of Sapphire Substrate reaches that 20 nanometers are following, mirror effect, unstressed (promptly do not have warpage, do not have distortion).
The composition of used nanometer burnishing liquid is in the above-mentioned procedure of processing: nano silica fume, ethylene glycol, glycerine, ethanol ammonia and deionized water constitute, its pH value is controlled between 9～11, wherein, the content of nano silica fume is 20～25%, ethylene glycol is 8～15%, glycerine is 3～5%, and ethanol ammonia is 0.1～0.3%, and deionized water is 60～65%.It should be noted, must be after the nanometer burnishing liquid configuration finishes through strict filtration treatment.
Below be two specific embodiments of nanometer burnishing liquid:
One of embodiment: the content of nano silica fume is 20%, and ethylene glycol is 13%, and glycerine is 4%, and ethanol ammonia is 0.2%, and deionized water is 62.8%.
Two of embodiment: the content of nano silica fume is 23%, and ethylene glycol is 10%, and glycerine is 3.5%, and ethanol ammonia is 0.3%, and deionized water is 63.2%.
The nanometer burnishing liquid of these two kinds of prescriptions is that 1.5～4.5Kg, temperature are when being used with above-mentioned procedure of processing under 22 ℃ ± 2 ℃ the condition at pressure, shown in the roughness of comparing resulting Sapphire Substrate when common micron order polishing fluid cooperates with conventional polishing technology sees the following form: unit: nanometer
| Sample number into spectrum | 1 | 2 | 3 | 4 | 5 |
| Conventional | 63.2 | 42.2 | 39.7 | 45.6 | 48.8 |
| Prescription 1 | 15.3 | 18.1 | 16.5 | 18.9 | 13.2 |
| Prescription 2 | 16.2 | 17.3 | 15.2 | 17.8 | 12.8 |
As seen from the above table, when the processing method of Sapphire Substrate of the present invention and nanometer burnishing liquid are used, thereby the surface roughness that can significantly reduce Sapphire Substrate really reaches the technique effect of mirror effect and unstressed (promptly do not have warpage, do not have distortion).
Accompanying drawing 2 is depicted as under the different polishing fluid conditions, the surface roughness of Sapphire Substrate and the relation curve of polishing time, from this curve as can be seen, reach identical surface roughness, use the obviously required time of required time of nanometer burnishing liquid short than common micron order polishing fluid, from and labor productivity is greatly improved.
Claims (2)
1. the processing method of a nanoscale Sapphire Substrate, it is characterized in that: it is made of following steps:
(1) bonding die according to the characteristics of Sapphire Substrate, utilizes bonding die equipment long to have the one side of device to stick on the sheet glass it, so that vacuum suction guarantees the stability of die bonding on bistrique when grinding;
(2) corase grind is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, utilize kibbling mill with the thickness of Sapphire Substrate by 330～450 microns be thinned to about 120 microns, roughness is about 2.0 microns;
(3) fine grinding is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, and utilizing atomizer mill is about 0.5 micron with Sapphire Substrate by 120 microns reduced thickness to 90～95 micron, roughness, and thickness evenness is in 2.0 microns;
(4) the thick throwing is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, to utilize thick throwing machine and nanometer burnishing liquid that Sapphire Substrate is polished, and its roughness is reached about 0.1 micron, and the uniformity of thickness is in 1.0 microns;
(5) the smart throwing is 1.5Kg～4.5Kg at pressure, and temperature is under 22 ℃ ± 2 ℃ the condition, to utilize precision polisher and nanometer burnishing liquid that Sapphire Substrate is polished, and makes the surface roughness of Sapphire Substrate reach that 20 nanometers are following, mirror effect, unstressed.
2. the processing method of the nanoscale Sapphire Substrate described in claim 1, it is characterized in that: described nanometer burnishing liquid is made of nano silica fume, ethylene glycol, glycerine, ethanol ammonia and deionized water, its pH value is between 9～11, wherein, the content of nano silica fume is 20～25%, and ethylene glycol is 8～15%, and glycerine is 3～5%, ethanol ammonia is 0.1～0.3%, and deionized water is 60～65%.
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| CNB031143504A CN1227730C (en) | 2003-04-30 | 2003-04-30 | Processing method of nano level saphire substrate and its special polishing liquid |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100581731C (en) * | 2007-06-15 | 2010-01-20 | 中国科学院大连化学物理研究所 | Surface processsing method of white gem crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100581731C (en) * | 2007-06-15 | 2010-01-20 | 中国科学院大连化学物理研究所 | Surface processsing method of white gem crystal |
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