CN1226128A

CN1226128A - Apparatus and method for producing high voltage for gas ionization

Info

Publication number: CN1226128A
Application number: CN 98120164
Authority: CN
Inventors: 托马斯·西博尔德
Original assignee: Individual
Current assignee: Individual
Priority date: 1997-10-14
Filing date: 1998-10-13
Publication date: 1999-08-18
Also published as: GB9822323D0; ITMI982192A1; GB2330456B; FR2769758B1; DE19745316A1; IT1302653B1; KR19990037076A; TW419876B; FR2769758A1; DE19745316C2; GB2330456A; JPH11195386A

Abstract

This invention relates an ion emitter with a high voltage generator, consisting of the combination of a Peltier heating and cooling member (1a, 1b, 1c) and a member with pyro-electric properties (2), as well as an electrode arrangement (3 and 4). By varying the current intensity and/or current direction at the Peltier member, a temperature variation is produced which is transmitted to the pyro-electric member. Electric potential differences are thus produced on two opposite surfaces of the member. Suitable electrodes of non-insulating materials are connected to these surfaces.

Description

Generation is used for the apparatus and method of the high pressure of gas ionization

The present invention relates to make, produce when assembling and quality test the device of the high pressure that is used for gas ionization, the particularly preparation of wafer and micro structural component and set of devices at microstructure device and set of devices.

When making and handle the microstructure technology product, electrostatic charge will work the mischief.On the one hand structure can be damaged or damages (EOS) because of the electric charge overload when the discharge that can not control.As long as under the purification indoor conditions, device is handled, promptly there is the threat of dust, because Coulomb force static can increase the deposition of not wishing the particulate that occurs, especially producing semiconductor device, when preparation hard disk and flat-panel screens, but when being also included within optical coating, and static does not wish to occur in the dipping lacquer workshop.

For avoiding the appearance of static, all article in these production divisions as possible, are all made by electric conducting material and it are carried out ground connection targetedly.But adopt the not all place of above-mentioned method all to be suitable for.So need high chemical impedance, this impedance to be realized sometimes by poly-fluoroplastics with high sheet resistance, perhaps must adopt insulator and usually product itself also be high-insulation.But certainly will follow the danger of charging thereupon.

Only can be at these field static by joining airborne charge carrier neutralization.The charge carrier that the air of air ionizer generation ionic species carries.This electro-dissociator produces gas discharge by high pressure being added on top rib portion or the line.(Townsend discharge) has the air that is ionized in these gas-discharge zones.Look the polarity of high pressure, the ion of corresponding polarization is released by the gas-discharge zone by field intensity and is moved as free ion (mainly being positive nitrogen ion and negative oxonium ion), is passed air by electric field or air stream drives.

Fully known and illustrate in the literature to these processes, there are a plurality of patents all to relate to and implement this electro-dissociator (EP 0448929A1, DE 3543618A1, DE3603947A1, DE3522881C1, US4477263; PCT WO96/02966; US4872083; PCTWO92/03863; US5153811; US4542434; 4117332; 4956582; 4809127; 3711743; PCT WO87/04873 etc.).

Modern better purifying space technology is by beginning the mutual separated hall in production area and personnel district type better purifying space, developed into the machine of better purifying space technology cover cap and small-sized production area (SMIF technology, 300 millimeters substrate technology, miniature environment).The electro-dissociator that conforms to prior art needs transformer or so-called cascade circuit for producing high pressure.These systems take up space bigger.So these systems will be installed in the small-sized better purifying space (miniature environment) since narrow be impossible or very difficult.If voltage source is installed together, then can lose many spaces, if voltage source is installed in outside the miniature environment, then must lay high-tension cable, and the risky or safety problem of these high-tension cables.So have the demand of the small-sized and microminiaturized ionization system that has the high-voltage power supply that is installed together.

U.S. Pat 4,620,262 disclose a kind of thermoelectric power conversion equipment, and it does not need by mechanical movement, can make heat energy be converted into electric energy effectively.

Another deficiency is, common electro-dissociator extends the high changed electric field or the permanent electric field of (tens centimetres) far away because its frame mode will produce, this electric field owing to the induction in the field of waiting to neutralize will cause do not wish the current potential and the charge displacement that occur.So exist demand to the electro-dissociator that has as far as possible little stray magnetic field.

The objective of the invention is to overcome the deficiencies in the prior art, the device that produces the high pressure that is used for gas ionization in a kind of production in microstructure device and set of devices, assembling and the quality test process is provided, be particularly related to the production of wafer and microelectronic element, it makes a small-sized or miniature ionization system can directly be equipped with a high-voltage power supply, and stray magnetic field is minimum.

Purpose according to the present invention is realized by appended independent claims.Others of the present invention are embodied by dependent claims.

Utilization has electrical effect that the crystal of big as far as possible thermoelectrical efficiency produces to produce high pressure.

By following embodiment the present invention is described by accompanying drawing.

Fig. 1 is the ionization device structural representation;

Fig. 2 is the insulation of ionization device shown in Figure 1.

In Fig. 1, be a kind of ionization device reduced graph.

Described ionization device serves as that the basis is by producing high potential (reaching 1000 volts) being connected of heating element and cooling element with " Pa Er card " effect, the semiconductor that just mixing (Fig. 1-1A) and the negative semiconductor that mixes (Fig. 1-1C) and lead (Fig. 1-1B) is wherein arranged, and the thermoelectric material (Fig. 1-2) with high thermoelectric constant, for example lithium niobate (LiNbO ₃), lithium tantalate (LiTaO ₃) or even poly-fluorine hydrocarbon.

Peltier element cooling or heat hot electric material, the outer surface of thermoelectric material is because inner charge displacement is polarized.If eight ground connection with in two planes of polarization then will obtain high voltage on another plane of polarization, the height and the polarity of this voltage depend on temperature.If with this voltage be added in by as on high-tension side by most advanced and sophisticated (Fig. 1-3), rib or line and be close on the electrode system that ground connection counterelectrode that the former is provided with constitutes, then on high-field electrode, will produce ion, and because the physical dimension between high-field electrode and ground connection reverse electrode is very little, thereby produce do not wish that the electric interfering field that occurs is very little, and it is also very short to extend into the distance in space.

By changing the polarity of the supply voltage on the Peltier element (Fig. 1-5), pyroelectric crystal is cooled respectively or heats and so alternation generation cation and anion.Because being an electrical insulator and two polarization surfaces, crystal can be regarded as capacitor, by identical cation and the anion of total amount that produces in the approximate next time automatic adjustment of the situation of the internal resistance of ignoring.Should automatically adjust the generation ion that meets equilibrium to avoid the requirement of unipolarity space charge.The supply voltage of the effective Peltier element of technology is several volts (0.2～10 volts).Xiang Guan wiring can be very well harmonious with modern better purifying space technology therewith.

Adopt monocrystalline, preferably adopt lithium tantalate, its specification is that 5mm * 5mm * 0.5mm can produce sufficient charge carrier, so as to realize to the electrostatic charge technology effectively in and the time (＜20 seconds).Thereby a whole set of band high-voltage power supply and the electro-dissociator of electrode system just can be installed in less than one cubic centimetre volume.

The present invention is because a little less than the little and interference field of size, thereby is suitable for being installed in the miniature environment very much.

Fig. 2 shows in the device according to Fig. 1 and has introduced dielectric 6, if this complete ionization module is bumped into (Fig. 2-6) in the dielectric, then this unit is easy to clean, and even also can in etching medium, use, these some fields for semiconductor processing technology are useful.

Claims

1. be used to produce the device of gas ion, constitute, it is characterized in that: produce high pressure by heating and cooling to thermoelectric material by emission of ions electrode, counterelectrode and high pressure generator.

2. be used to produce the device of gas ion, be made of emission of ions electrode, counterelectrode and high pressure generator, it is characterized in that: electrode directly is connected with high pressure generator.

3. according to the device that is used to produce gas ion of claim 1 and 2, it is characterized in that: adopt Peltier element that thermoelectric material is carried out heating and cooling.

4. according to the device that is used to produce gas ion of claim 1 and 2, it is characterized in that: the employing heating resistor heats and cools off by convection current in gas or the heat conduction on solid.

5. according to the device that is used to produce gas ion of claim 3, it is characterized in that: the heating and cooling of the conversion performance period by polar cycle in the electric current of the Peltier element of flowing through, thus realize the conversion of the same period of emission electrode polarity and ion polarity.

6. according to the device that is used to produce gas ion of claim 1 to 5, it is characterized in that: emission electrode has tip or rib.

7. according to the device that is used to produce gas ion of claim 1 to 6, it is characterized in that: electrode all is bumped in the dielectric.

8. according to the device that is used to produce gas ion of claim 1 to 7, it is characterized in that: the emission electrode that adopts the corresponding utmost point periodically is as counterelectrode.

9. according to the device that is used to produce gas ion of claim 1 to 8, it is characterized in that: the in parallel or series connection of the Peltier element of reversed polarity.

10. according to the device that is used to produce gas ion of claim 1 to 9, it is characterized in that: for the ionic weight of launching is adjusted the change variations in temperature.

11. the device that is used to produce gas ion according to claim 1 to 10 is characterized in that: for the ionic weight of launching being adjusted the bias voltage that changes counterelectrode.