419876 A7 經濟部智慧財產局員工消費合作社印製 B7__ 五、發明說明（！） 一種用於產生氣體離子化所需的高電壓的裝置，這是 用#微構造化的構件及構造組製造，安裝及品管時，特別 是用在製造晶圓（Wafer)及微電子構件及構造組。 在微構造技術產品的製造及操作時，靜電式充電作用 會造成損壞。一方面，在失控的放電作用時，這些構造受 到過度電負載而破壞或損壞（EOS)。如果構件在除塵室 條件下操作，亦即它們對灰塵的損害很敏感，則靜電荷由 於庫倫力（會吸附灰塵）可造成許多不想要的灰塵粒子沈 積，特別是在半導體構件生產時，硬碟（Festplatte)製造 時以及扁平面板顯示器（Flatpartel Display)製造時，以及 在作光學施覆，以及在上感光漆時，靜電荷係不希望有者 〇 爲了靜電產生，故在此生產區域內的所有東西，都用 導材料製造且適當地接地。但往往並不能全面地做到此點 。因此一部分需有強的抗化學品的抵抗性，它們只能用聚 氟塑膠製成，其表面電阻很大；或者須用絕緣材料，且往 往產品本身也是高度絕緣者。然而却因此不得不受到充電 的危害。 在此區域中，靜電式充電情事只能利用空氣供應電荷 載體而中和掉。空氣離子化器產生被空氣攜帶的電荷載體 (呈離子形式）。這種離子化器藉著施高電壓在尖端、銳 緣，或金屬絲上造成氣體放電。在此氣體放電區（ Townsend放電）中，空氣呈離子化狀態存在，各依高電的 極性而定，這些對應極性的離子受電場力從氣體放電區被 3 (請先間讀背面之注意事項再填寫本頁) 本紙張尺度適用f國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 419876 五、發明說明（>") 壓出’並呈自由離子（主要爲氮正離子及氧負離子）形式 運動，受電場或空氣流驅動而經過空氣運動。 此過程係已長時習知，在文獻中提到，且這種離子化 的實施方面有一連串的專利（歐洲專利EP 0448 929A1、德 專利 DE 3543618 Al、DE 3603947 A：l、DE 3522881C1、美 專利US 4,477,263、國際專利PCT WO 96/02966、美專利 US 4,872,083、國際專利 PCT WO 92/03863、美專利 US 5,153,811 ' US 4,542,434 ' 4,117,332 ' 4,956,582 ' 4,809,127 、3,711,743、國際專利 PCT WO 87/04873 等）。 現代的除塵室技術漸漸不再用大型大廳式的除塵室（ 其中製造區域與人員區域互相只略作不明顯的分隔）而係 朝向在除塵室技術上封艙式的機器以及小型之生產區域（ SMIF Technik, 300mm Wafer Technolqgie, Minienvironments) 。背景技術的離子化器需要變壓器或所謂瀑布（級聯式） 電路以產生高電壓。這些系統的體積偏大。這些系統在小 的除塵室（MinienviiOnments)由於後者狹窄故不可能或很 難放入。如果電壓供應系統一起整合進去，則又損失許多 空間，而如果電壓供應系統裝設在Minienvironments處， 則必須配設高電電纜，因此也會有高壓電纜的危險性或者 要裝必需的安全設備。 因此需要有具有整合之高電壓源的小型式小型化的離 子化系統。 此外，在美專利US 4620262發表了高溫電能轉換器， 它可直接將熱能有效地轉換成電能，而不須經由機械運動 4 本紙張尺度適用中國舀家標準（CNS)A4規格（210 X 297公釐） — — — — — — — — — — — — — ^ ·1111111 « — — — llllt I (請先閱讀背面之注意事項再填寫本頁) 413S7G A7 ______B7______ 五、發明說明（> ) 的轉換路徑。 習知者另一缺點爲，這些傳統之離子化器由於其構形 的緣故’因而引起較寬（幾十公分）的電的交流場或直流 場’這些電場受到所要中和的物體中的影響而造成不想要 的電位或電荷移動。因此需要有繞射場儘量小的離子化器 〇 本發明的目的在將習知背景技術的缺點除去並提供一 種裝置’用於在微構造化構件及構造組製造、安裝、及品 管時（特別是在製造晶圓與微電子構件及構造組時）產生 氣體離子化所需的高電壓，它可直接用在具有整合之高壓 電源的小型或小型化的離子化系統之中或之上，且只產生 很小的繞射場。 依本發明，這種目的係利用申請專利範圍主項的特徵 點達成。本發明有利的進一步特色係見於申請專利範圍副 項。 要產生局電壓，係利用在具有儘量大的焦電係數的結 晶上的焦電效應。 本發明在以下利用實施例詳細說明，並在圖式中顯示 0 圖式中： 第一圖係一離子化裝置的示意構造， 第二圖係在一介電質中的第一圖的離子化裝置。 〔圖號說明〕 (ΙΑ) P--半導體 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱請背面之注意事項再填寫本貝)419876 A7 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7__ V. Description of the Invention (!) A device for generating high voltage required for gas ionization, which is manufactured and installed with # 微 结构 化 的 结构 与 建筑 组When it comes to quality control, it is especially used in manufacturing wafers and microelectronic components and structural groups. During the manufacture and operation of microstructured technology products, electrostatic charging can cause damage. On the one hand, these structures are destroyed or damaged (EOS) by excessive electrical loads during uncontrolled discharge. If the components are operated under the conditions of a dedusting chamber, that is, they are sensitive to the damage of dust, the electrostatic charge can cause the deposition of many unwanted dust particles due to the Coulomb force (which will adsorb dust), especially during the production of semiconductor components. When manufacturing (Festplatte) and flat panel display (Flatpartel Display), optical coating, and photosensitive coating, the electrostatic charge is not desirable. For the generation of static electricity, all Everything is made of conductive material and properly grounded. But often this cannot be done comprehensively. Therefore, some of them need to be highly resistant to chemicals. They can only be made of fluoroplastics and have a high surface resistance. Or they must be made of insulating materials, and the products themselves are also highly insulated. However, they have to be harmed by charging. In this area, electrostatic charging can only be neutralized by using air to supply charge carriers. Air ionizers generate charge carriers (in the form of ions) carried by the air. This ionizer causes a gas discharge on the tip, sharp edge, or wire by applying a high voltage. In this gas discharge area (Townsend discharge), the air exists in an ionized state, each of which depends on the polarity of the high electricity. These ions of corresponding polarity are removed from the gas discharge area by the electric field force 3 (Please read the precautions on the back first) (Fill in this page again.) This paper size applies to National Standards (CNS) A4 (210 X 297 mm). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 419876 V. Description of Invention (> ") It moves in the form of free ions (mainly nitrogen positive ions and oxygen negative ions), and is driven by the electric field or air flow to move through the air. This process has long been known and mentioned in the literature, and there is a series of patents on the implementation of this ionization (European patent EP 0448 929A1, German patent DE 3543618 Al, DE 3603947 A: 1, DE 3522881C1, US Patent US 4,477,263, International Patent PCT WO 96/02966, US Patent US 4,872,083, International Patent PCT WO 92/03863, US Patent US 5,153,811 'US 4,542,434' 4,117,332 '4,956,582' 4,809,127, 3,711,743, International Patent PCT WO 87/04873, etc.) . Modern dust room technology is gradually no longer using large hall-type dust rooms (where the manufacturing area and the personnel area are only slightly indistinguishable from each other), and is instead oriented to cabin-type machines and small production areas in the dust room technology ( SMIF Technik, 300mm Wafer Technolqgie, Minienvironments). BACKGROUND Ionizers require transformers or so-called waterfall (cascade) circuits to generate high voltages. These systems are bulky. These systems are not possible or difficult to put in small dust removal rooms (MinienviiOnments) due to the latter's narrowness. If the voltage supply system is integrated together, it will lose a lot of space, and if the voltage supply system is installed in the Minienvironments, it must be equipped with high-voltage cables, so there will be danger of high-voltage cables or necessary safety equipment. Therefore, there is a need for a compact, miniaturized ionization system with an integrated high voltage source. In addition, the US patent US 4620262 has published a high-temperature electrical energy converter, which can directly convert thermal energy into electrical energy without mechanical movement. 4 The paper size is in accordance with the Chinese Standard (CNS) A4 (210 X 297 mm). Li) — — — — — — — — — — — — — — ^ · 1111111 «— — — llllt I (Please read the notes on the back before filling out this page) 413S7G A7 ______B7______ 5. Conversion of the description of the invention (>) path. Another disadvantage of the learner is that these traditional ionizers, due to their configuration, 'cause a wide (tens of centimeters) electric AC or DC field'. These electric fields are affected by the object to be neutralized This results in unwanted potential or charge movement. Therefore, an ionizer with a diffraction field as small as possible is required. The object of the present invention is to remove the disadvantages of the conventional background technology and provide a device 'for the manufacture, installation, and quality control of microstructured components and structural groups (particularly It is used to produce the high voltage required for gas ionization when manufacturing wafers and microelectronic components and structural groups. It can be directly used in or on a small or miniaturized ionization system with an integrated high-voltage power supply, and Only a small diffraction field is generated. According to the present invention, this object is achieved by using the feature points of the main item of the patent application scope. Further advantageous features of the present invention are found in the sub-item of the scope of patent application. To generate a local voltage, the pyroelectric effect is used on a crystal with a maximum pyroelectric coefficient. The present invention is described in detail in the following using examples, and is shown in the drawing. In the drawing, the first diagram is a schematic structure of an ionization device, and the second diagram is the ionization of the first diagram in a dielectric. Device. [Illustration of drawing number] (ΙΑ) P--semiconductor 5 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling in this shell)
•-------訂111!11* I 經濟部智慧財產局員工消費合作社印製 419$7δ Α7 Β7 經濟部智慧財產局員工消費合作杜印製 五、發明說明（％ ) (1C) η-半導體 (2) 焦電性材料 (3) 尖端 (4) 對立電極 (5 ) Peltier 元件 (6)介電質 在第一圖中顯示簡化形式的一個離化裝置。 此離子化裝置可以使高電位（高達10000V)藉著以 Peltier效應爲基礎的熱與冷元件的連接而產生，其中，摻 雜成P型的半導體（1A)與摻雜成n型的半導體（1C)經 一導體與一種焦電性材料（2)〔具高焦電性常數者〕連接 ，其材料例子如：鈮酸鉀（LiNbCh)，鉬酸鉀（LiTaOO 或聚氟化烴。 此Peltier元件將焦電材料冷却或加熱，焦電材料的外 表面亦受內部電荷移動而極化。如果把二個極化面之一接 地’則在另一面得到高電壓，其大小及極性與溫度有關。 如果將此電壓導至一個電極系統，該系統由尖端（3)、銳 緣或金屬絲（當作高電壓端）及一個緊密設置的接地對立 電極（4)構成，則在高電壓電極上產生離子，而且由於高 電壓電極與接地之對立電極間的幾何度量很小，因此不會 有或只有少許不想要的電干擾場會進入除塵室中。 藉著改變peltier元件（5)的供應電壓的極性，該焦 電結晶會冷却或變熱，並因而產生交替地呈正及負的離子 ，由於結晶的性屬電絕緣體，且因而二個極化面可視爲電 -------------,4 --------訂-------- r I (請先閱讀背面之注意事項再填寫本頁)• ------- Order 111! 11 * I Printed 419 $ 7δ Α7 Β7 Intellectual Property Bureau Employees 'Cooperatives of the Ministry of Economic Affairs Printed by the Ministry of Economic Affairs Intellectual Property Bureau's Employees' Cooperatives V. Invention Description (%) (1C) η-semiconductor (2) Pyroelectric material (3) Tip (4) Counter electrode (5) Peltier element (6) The dielectric in the first figure shows a simplified form of an ionization device. This ionization device can generate high potential (up to 10000V) through the connection of hot and cold elements based on the Peltier effect. Among them, a semiconductor doped into a P-type (1A) and a semiconductor doped into an n-type ( 1C) is connected to a pyroelectric material (2) [those with a high pyroelectric constant] via a conductor. Examples of materials are: potassium niobate (LiNbCh), potassium molybdate (LiTaOO or polyfluorinated hydrocarbon. This Peltier The element cools or heats the pyroelectric material, and the outer surface of the pyroelectric material is also polarized by the internal charge movement. If one of the two polarization planes is grounded, a high voltage is obtained on the other plane, and its size and polarity are related to temperature. If this voltage is led to an electrode system consisting of a tip (3), a sharp edge or a wire (as a high-voltage end) and a closely placed grounded counter electrode (4), then on the high-voltage electrode Ions are generated, and because the geometrical metric between the high-voltage electrode and the opposite electrode to ground is small, no or only a few unwanted electrical interference fields will enter the dust removal chamber. By changing the supply voltage of the peltier element (5) of Nature, the pyroelectric crystal will cool or become hot, and thus produce positive and negative ions alternately. Because the nature of the crystal is an electrical insulator, and therefore the two polarization planes can be regarded as electrical --------- ----, 4 -------- Order -------- r I (Please read the notes on the back before filling this page)
五、發明說明（<) 谷器，故忽略掉內電阻做一次趨近的自動調節，可經常產 生一樣多的正或負離子。這種自動調節和傳統那種需要抵 消式產生離子以避免單極式的空間電荷不同β技術上適用 之Peltier元件的供應電在爲幾伏特（〇.2V〜10V)，與它 連接的電線可以很適當地配合現代除塵室需求而統一。 利用大小5mmX5mmX〇.5nm的焦電單晶（且宜爲钽 酸鋰）可產生充分的電荷載體，以達到靜電荷之工程可用 中和時間（<20秒）。如此，可將具有高電壓供應系統及 電極系統的完整離子化器構建在一立方公分以體的體積中 〇 由於尺寸小且干擾場小，故本發明可用於構建到 Minienviroments 中。 在第二圖中，第一圖的整個離子化裝置埋設到一種介 電質（6) (Dielektnkum)中。因此造成之單元很容易淸 洗，它也可用到侵蝕性的介質中，這點對於半導體加工技 術的某些範圍是很有利的。 (請先閱讀背面之注意事項再填寫本頁) 訂---------線· 經濟部智慧財產局員工消費合作社印製 7 本纸張尺度適用t國固家標準（CNS)A4規格（210 X 297公釐）5. Description of the invention (<) The valley device, so ignore the internal resistance and make an approaching automatic adjustment, which can often produce as many positive or negative ions. This kind of automatic adjustment and the traditional type that needs to cancel the generation of ions to avoid unipolar space charges are different. The Peltier element that is technically applicable is powered by several volts (0.2V ~ 10V), and the wires connected to it can Very suitable to meet the needs of modern dust room and unified. Using a pyroelectric single crystal with a size of 5mmX5mmX0.5nm (and preferably lithium tantalate) can generate a sufficient charge carrier to achieve the engineering neutralization time (< 20 seconds) available for electrostatic charge. In this way, a complete ionizer with a high voltage supply system and an electrode system can be built in a volume of one cubic centimeter. Because of its small size and small interference field, the present invention can be used to build Minienviroments. In the second figure, the entire ionization device of the first figure is buried in a dielectric (6) (Dielektnkum). The resulting unit is easy to clean, and it can also be used in aggressive media, which is advantageous for certain areas of semiconductor processing technology. (Please read the precautions on the back before filling out this page) Order --------- Line · Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 7 This paper standard is applicable to China National Standard (CNS) A4 Specifications (210 X 297 mm)