CN121908660A - 图像传感器 - Google Patents

图像传感器

Info

Publication number
CN121908660A
CN121908660A CN202511954957.4A CN202511954957A CN121908660A CN 121908660 A CN121908660 A CN 121908660A CN 202511954957 A CN202511954957 A CN 202511954957A CN 121908660 A CN121908660 A CN 121908660A
Authority
CN
China
Prior art keywords
photoelectric conversion
isolation trench
conversion portion
image sensor
ground region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202511954957.4A
Other languages
English (en)
Chinese (zh)
Inventor
朴海龙
崔性洙
朴钟银
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020210125031A external-priority patent/KR102956641B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN121908660A publication Critical patent/CN121908660A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN202511954957.4A 2021-09-17 2022-09-15 图像传感器 Pending CN121908660A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2021-0125031 2021-09-17
KR1020210125031A KR102956641B1 (ko) 2021-09-17 이미지 센서
CN202211121673.3A CN115831990A (zh) 2021-09-17 2022-09-15 图像传感器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202211121673.3A Division CN115831990A (zh) 2021-09-17 2022-09-15 图像传感器

Publications (1)

Publication Number Publication Date
CN121908660A true CN121908660A (zh) 2026-04-21

Family

ID=85523625

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202511954957.4A Pending CN121908660A (zh) 2021-09-17 2022-09-15 图像传感器
CN202211121673.3A Pending CN115831990A (zh) 2021-09-17 2022-09-15 图像传感器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202211121673.3A Pending CN115831990A (zh) 2021-09-17 2022-09-15 图像传感器

Country Status (3)

Country Link
US (2) US12557417B2 (https=)
JP (2) JP2023044647A (https=)
CN (2) CN121908660A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12317625B2 (en) * 2021-10-21 2025-05-27 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
WO2024195698A1 (ja) 2023-03-20 2024-09-26 株式会社Ihi 取外し装置および本体から部品を取り外す方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390089B2 (en) 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
JP6363857B2 (ja) * 2014-03-24 2018-07-25 キヤノン株式会社 撮像素子、撮像装置、画像処理方法、並びにプログラム
KR102268714B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP6738200B2 (ja) * 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
KR102563588B1 (ko) 2016-08-16 2023-08-03 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102551489B1 (ko) 2017-10-13 2023-07-04 삼성전자주식회사 이미지 센서
US10498947B2 (en) * 2017-10-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor including light shielding layer and patterned dielectric layer
US11075242B2 (en) 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
KR102531355B1 (ko) 2018-03-20 2023-05-10 삼성전자주식회사 이미지 센서
KR102639539B1 (ko) 2018-11-05 2024-02-26 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR102710378B1 (ko) 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서
KR102818280B1 (ko) * 2019-12-13 2025-06-11 삼성전자주식회사 이미지 센서
US11955496B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Back-side deep trench isolation structure for image sensor
KR20230001778A (ko) * 2021-06-29 2023-01-05 삼성전자주식회사 더블 트렌치를 포함하는 픽셀 분리 구조물을 포함하는 이미지 센서
US12294011B2 (en) * 2021-07-28 2025-05-06 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12382740B2 (en) * 2021-12-30 2025-08-05 Omnivision Technologies, Inc. Image sensor for infrared sensing and fabrication thereof

Also Published As

Publication number Publication date
JP2026035852A (ja) 2026-03-04
US20230092590A1 (en) 2023-03-23
KR20230041427A (ko) 2023-03-24
US12557417B2 (en) 2026-02-17
JP2023044647A (ja) 2023-03-30
US20260107598A1 (en) 2026-04-16
CN115831990A (zh) 2023-03-21

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