CN1208814C - 一种带有导热套管的rf探头 - Google Patents
一种带有导热套管的rf探头 Download PDFInfo
- Publication number
- CN1208814C CN1208814C CNB021224528A CN02122452A CN1208814C CN 1208814 C CN1208814 C CN 1208814C CN B021224528 A CNB021224528 A CN B021224528A CN 02122452 A CN02122452 A CN 02122452A CN 1208814 C CN1208814 C CN 1208814C
- Authority
- CN
- China
- Prior art keywords
- heat conduction
- power
- sleeve pipe
- interface
- conduction material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000523 sample Substances 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims description 35
- 238000001514 detection method Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 238000010248 power generation Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 7
- 239000004809 Teflon Substances 0.000 description 9
- 229920006362 Teflon® Polymers 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/874,439 US6559650B2 (en) | 2001-06-05 | 2001-06-05 | RF power probe head with a thermally conductive bushing |
US09/874,439 | 2001-06-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1404108A CN1404108A (zh) | 2003-03-19 |
CN1208814C true CN1208814C (zh) | 2005-06-29 |
Family
ID=25363772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021224528A Expired - Fee Related CN1208814C (zh) | 2001-06-05 | 2002-06-04 | 一种带有导热套管的rf探头 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6559650B2 (zh) |
EP (1) | EP1265267B1 (zh) |
JP (1) | JP4809567B2 (zh) |
KR (1) | KR20020092833A (zh) |
CN (1) | CN1208814C (zh) |
DE (1) | DE60237492D1 (zh) |
TW (1) | TW563162B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7319316B2 (en) * | 2005-06-29 | 2008-01-15 | Lam Research Corporation | Apparatus for measuring a set of electrical characteristics in a plasma |
US7479207B2 (en) * | 2006-03-15 | 2009-01-20 | Lam Research Corporation | Adjustable height PIF probe |
WO2008091808A2 (en) * | 2007-01-22 | 2008-07-31 | National Consolidated Technologies, Llc | Automated system and method for medical care selection |
EP2597481A1 (en) * | 2011-11-22 | 2013-05-29 | Koninklijke Philips Electronics N.V. | RF-safe interventional or non-interventional instrument for use in an MRI apparatus |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2628510B2 (ja) * | 1988-04-08 | 1997-07-09 | 新日本製鐵株式会社 | BN−AlN系複合焼結体の製造方法 |
JPH0648839A (ja) * | 1992-07-31 | 1994-02-22 | Kurosaki Refract Co Ltd | 窒化ホウ素焼結体の製造方法 |
US5837621A (en) * | 1995-04-25 | 1998-11-17 | Johns Manville International, Inc. | Fire resistant glass fiber mats |
JP3461651B2 (ja) * | 1996-01-24 | 2003-10-27 | 電気化学工業株式会社 | 六方晶窒化ほう素粉末及びその用途 |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US5770922A (en) * | 1996-07-22 | 1998-06-23 | Eni Technologies, Inc. | Baseband V-I probe |
US5867020A (en) * | 1996-10-31 | 1999-02-02 | Sematech, Inc. | Capacitively coupled RF voltage probe having optimized flux linkage |
US6239587B1 (en) * | 1997-01-03 | 2001-05-29 | Texas Instruments Incorporated | Probe for monitoring radio frequency voltage and current |
US6449568B1 (en) * | 1998-02-27 | 2002-09-10 | Eni Technology, Inc. | Voltage-current sensor with high matching directivity |
JP3497092B2 (ja) * | 1998-07-23 | 2004-02-16 | 名古屋大学長 | プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置 |
JP2001085369A (ja) * | 1999-09-13 | 2001-03-30 | Hitachi Ltd | チャ−ジングダメ−ジ計測電極およびチャ−ジングダメ−ジ計測装置 |
JP2001237097A (ja) * | 2000-02-21 | 2001-08-31 | Hitachi Ltd | プラズマ計測方法および計測装置 |
-
2001
- 2001-06-05 US US09/874,439 patent/US6559650B2/en not_active Expired - Lifetime
-
2002
- 2002-05-21 TW TW091110663A patent/TW563162B/zh not_active IP Right Cessation
- 2002-05-31 EP EP02011999A patent/EP1265267B1/en not_active Expired - Lifetime
- 2002-05-31 DE DE60237492T patent/DE60237492D1/de not_active Expired - Lifetime
- 2002-06-04 KR KR1020020031328A patent/KR20020092833A/ko active IP Right Grant
- 2002-06-04 JP JP2002163223A patent/JP4809567B2/ja not_active Expired - Fee Related
- 2002-06-04 CN CNB021224528A patent/CN1208814C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1404108A (zh) | 2003-03-19 |
JP4809567B2 (ja) | 2011-11-09 |
US6559650B2 (en) | 2003-05-06 |
EP1265267A2 (en) | 2002-12-11 |
US20020180450A1 (en) | 2002-12-05 |
JP2002367961A (ja) | 2002-12-20 |
DE60237492D1 (de) | 2010-10-14 |
EP1265267B1 (en) | 2010-09-01 |
TW563162B (en) | 2003-11-21 |
KR20020092833A (ko) | 2002-12-12 |
EP1265267A3 (en) | 2006-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: MKS EQUIPMENT CO.,LTD. Free format text: FORMER OWNER: ENI TECHNOLOGY CO.,LTD. Effective date: 20090710 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090710 Address after: Massachusetts USA Patentee after: MKS Instruments Inc. Address before: American New York Patentee before: ENI Technology Co. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050629 Termination date: 20140604 |