CN1207944C - High power microwave plasma torch - Google Patents
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- CN1207944C CN1207944C CN 02144899 CN02144899A CN1207944C CN 1207944 C CN1207944 C CN 1207944C CN 02144899 CN02144899 CN 02144899 CN 02144899 A CN02144899 A CN 02144899A CN 1207944 C CN1207944 C CN 1207944C
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Abstract
The present invention relates to a high power microwave plasma torch which comprises a tunable coaxial resonant cavity and a rectangular waveguide, wherein a waveguide / coaxial converting device is arranged in the rectangular waveguide. The waveguide / coaxial converting device is a door twisting structure formed from a door twisting block and a medium single wire which are buckled up and down, and the waveguide / coaxial converting device is respectively connected with the upper surface and the lower surface of the rectangular waveguide in a close contact mode. The tunable coaxial resonant cavity is composed of an upper cavity, a lower cavity and the waveguide / coaxial converting device, wherein the upper cavity and the lower cavity are positioned on the upper side and the lower side of the waveguide, and are coaxial with the waveguide / coaxial converting device. One end of an inner conductor is inserted in the lower cavity. The other end of the inner conductor penetrates through the medium single wire, the door twisting block and the upper cavity in sequence. A short-circuiting piston of the resonant cavity is arranged between the inner conductor and an outer conductor of the upper cavity in an axis direction. A microwave source is arranged on one end of the rectangular waveguide, and a waveguide short-circuiting piston is arranged on the other end of the rectangular waveguide. The present invention solves the problems that an excitation maintenance mechanism has the disadvantages of complication, inconvenient regulation, low power level, etc.; thus, the present invention can be applied to gas phase chemical reaction, the synthesis and the processing of materials, etc.
Description
Technical field
The present invention relates to the plasmatorch field, be specially a kind of HIGH-POWERED MICROWAVES plasma torch.
Background technology
Plasma can be divided into conventional direct current (interchange) plasma, high frequency or radio frequency plasma, microwave induced plasma, laser plasma and thermal excitation plasma according to the method that excites.Plasma technique is widely used at the aspects such as processing of the preparation processing of material, thermonuclear reaction, poisonous waste.Exciting of conventional direct current (interchange) plasma is to make gas breakdown by forming strong electric field strength (is the 3000V/ millimeter for air) between pair of electrodes.In actual applications, there is the shortcoming that electrode life is short and have the electrode fouling that causes owing to the electrode high-temperature evaporation in conventional direct current (interchange) plasma.Though can improve electrode life (reaching hundreds of hours at present) by Forced water cooling, because electrode fouling has still limited the range of application of direct current (interchange) plasma.High frequency (radio frequency) plasma is electrodless discharge, the problem that does not have electrode fouling, be applied in the cleaning of material preparation (as the etching of large scale integrated circuit, vapour deposition etc.) field, but the electrical efficiency of high frequency (radio frequency) plasma is very low, can only be coupled the at most radio-frequency (RF) energy of 40-50% of plasma, and radio-frequency power is high more, and energy efficiency is low more.The energy of radio-frequency power supply also causes environment electromagnetics to pollute to empty radiation in addition, in use must take the corresponding protection measure.Though laser induced plasma also is the electrodless discharge process, equipment manufacturing cost height, the low feasibility that has also limited large-scale application of energy utilization efficiency.
Microwave induced plasma is another electrodless discharge process.Existing microwave discharge structure summarize can be divided into following several: the exciting technique (CMP) of (1) capacitive coupling microwave plasma; (2) exciting technique (Surfatron) of coaxial base table ground roll microwave plasma; (3) exciting technique of waveguide-based surface wave microwave plasma (Surfaguide); (4) TM
010The exciting technique of resonant cavity (MIP) microwave plasma.The excitation mechanism of these plasmas all is to work under small-power (≤1 kilowatt) condition usually, present plasma source mainly as spectrum analysis.Along with plasma technique in the clean processing of material, poisonous waste is handled and plasma chemistry compound probability demands of applications constantly strengthens, the microwave plasma torch that research is fit to various working gas media, high-power, high capacity usage ratio becomes the general interested problem of industrial quarters.From microwave plasma excitated principle, exciting of present most microwave plasma is the method that adopts microwave cavity, resonance by the microwave applications device, thereby the regional area in the microwave applications device forms very high electric field strength, utilize the high electric field of regional area that gas medium is punctured, form plasma.Owing to be to adopt microwave cavity principle design plasma exciatiaon mechanism, after plasma forms, must cause that the pay(useful) load amount of microwave cavity and the resonance frequency of microwave cavity cavity change.After making the generation microwave plasma, the coupling of the impedance matching of whole microwave system and cavity resonant frequency and microwave source frequency must have an effective regulating measure that cavity is regulated.Recently engineering college adopts that two cover microwave systems realize microwave plasma in the masschusetts, u.s.a stablely excites and keeps.One cover microwave system is a microwave cavity, is responsible for exciting of plasma; Another set of microwave system is the microwave travelling-wave cavity, be responsible for keeping plasma, optimum organization by two cover microwave systems makes the capacity usage ratio of microwave bring up to 95%, and this system can be fit to all gases working media and high-power system work (greater than 4 kilowatts).The Britain auxilliary university of sharp thing has reported a kind of excitation apparatus of HIGH-POWERED MICROWAVES plasma.This device adopts the method on compression square type Narrow Wall of Waveguide limit to make and form local high electric field strength zone in waveguide, make the field intensity at gas nozzle place reach maximum by the degree of adjustment waveguide compression and the position of plasma exciatiaon gas nozzle, (1-6 kilowatt) makes excited gas ionization form plasma under certain microwave power.Utilize high velocity air that plasma is gone out narrow slit on the microwave waveguide broadside.Comprehensive existing HIGH-POWERED MICROWAVES excitation device, ubiquity excite keeps mechanism's complexity, regulates inconvenient shortcoming, and the present in addition power level that reaches is lower.
Summary of the invention
The purpose of this invention is to provide a kind of can the solution and excite the HIGH-POWERED MICROWAVES plasma torch of keeping problems such as mechanism's complexity, adjusting is inconvenient, power level is low.
Technical scheme of the present invention is:
A kind of HIGH-POWERED MICROWAVES plasma torch, it is characterized in that: comprise tunable coaxial resonant cavity, rectangular waveguide, establish waveguide/coaxial conversion equipment in the described rectangular waveguide, described waveguide/coaxial conversion equipment is turned round the door kink structure that piece and medium single line fasten up and down for door, described waveguide/coaxial conversion equipment closely contacts with the rectangular waveguide upper and lower surface respectively and is connected, described tunable coaxial resonant cavity by be positioned at waveguide up and down both sides and with waveguide/coaxial epicoele of coaxial conversion equipment, cavity of resorption, and waveguide/coaxial conversion equipment constitutes jointly, on, cavity of resorption is coaxial with outer conductor and inner wire, inner wire one end is plugged in cavity of resorption, the other end runs through the medium single line successively, door is turned round piece, epicoele, be provided with the resonant cavity short-circuit plunger along axis direction between the internal and external conductor of epicoele, described rectangular waveguide one side is provided with microwave source, and another side is provided with the waveguide short piston;
Described medium single line is made of inner wire and the dielectric around it, and the DIELECTRIC CONSTANT of dielectric material is less than or equal to 10;
Described dielectric material is one of air, boron nitride, polytetrafluoroethylene, aluminium oxide, quartz or its complex;
The frequency of described microwave source is 2450MHz, 915MHz or 314MHz; When the frequency of microwave source is 2450MHz, when its medium single line medium material adopted boron nitride, the key dimension of plasmatorch device was: inner conductor outer diameter D
0=4～30mm, medium single line outer diameter D
1=14～100mm, inner wire are plugged in the length L in the cavity of resorption
1=30～300mm, the medium single line is along the plasmatorch axial length L
4=20～54.6mm, door is turned round piece thickness L
5=0-34.6mm; When the frequency of microwave source is 2450MHz, when its medium single line medium material adopted aluminium oxide, the key dimension of plasmatorch device was: inner conductor outer diameter D
0=4～30mm, medium single line outer diameter D
1=10～60mm, inner wire are plugged in the length L in the cavity of resorption
1=30～300mm, the medium single line is along the plasmatorch axial length L
4=15～40mm, door is turned round piece thickness L
5=14～40mm; When the frequency of microwave source is 2450MHz, when its medium single line medium material adopted polytetrafluoroethylene, the key dimension of plasmatorch device was: inner conductor outer diameter D
0=4～30mm, medium single line outer diameter D
1=18～108mm, inner wire are plugged in the length L in the cavity of resorption
1=30～300mm, the medium single line is along the plasmatorch axial length L
4=30～54.6mm, door is turned round piece thickness L
5=0～24.6mm; When the frequency of microwave source is 2450MHz, its medium single line medium material adopts quartzy, and the key dimension of plasmatorch device is: inner conductor outer diameter D
0=4～30mm, medium single line outer diameter D
1=14～90mm, inner wire are plugged in the length L in the cavity of resorption
1=30～300mm, the medium single line is along the plasmatorch axial length L
4=25～54.6mm, door is turned round piece thickness L
5=0～30mm; When the frequency of microwave source is 915MHz, its medium single line medium material adopts boron nitride, and the key dimension of plasmatorch device is: inner conductor outer diameter D
0=12～50mm, medium single line outer diameter D
1=60～220mm, inner wire are plugged in the length L in the cavity of resorption
1=100～1200mm, medium single line length L
4=40～124mm, door is turned round piece thickness L
5=0～84mm.
The invention has the beneficial effects as follows:
1. excite and keep that mechanism is simple, easy to adjust, the microwave incident power is big.The present invention learns principle according to microwave, on the basis of analyzing existing excitation device, has designed a kind of new microwave plasma excitated scheme.Utilize tunable coaxial resonant cavity to realize the adjustment with the resonance frequency of plasma generation rear chamber of exciting of plasma, utilize the waveguide short piston to regulate and solve the unmatched problem of impedance that causes owing to plasma generation, two cover governor motions work alone separately, do not disturb each other.Adopted the waveguide/coaxial conversion equipment and the gas sealing structure of door kink structure for the needs that are fit to high-power and various working gas media applications, this device can be under 20 kilowatts power long-term stable operation, utilize the medium single line to realize that the energy of the rectangular waveguide/tunable coaxial resonant cavity of microwave is coupled and the sealing of gas, make this device can be under high-power condition steady operation, be suitable for carrying out the operational environment of non-oxygen atmosphere simultaneously.
2. utilize tunable coaxial resonant cavity to obtain the characteristics of high quality factor resonant cavity easily, adopt tunable coaxial resonant cavity can realize the exciting of microwave plasma of any working gas.Because the drift of the cavity resonant frequency that the generation of plasma causes is revised in real time, the resonance frequency that makes tunable coaxial resonant cavity matches with the operating frequency of microwave power supply the short-circuit plunger that utilizes tunable coaxial resonant cavity all the time to the resonance frequency of resonant cavity.
3. the efficient of utilizing the short-circuit plunger of tunable coaxial resonant cavity can regulate waveguide/coaxial conversion, the width on the narrow limit by the suitable compressed rectangular waveguide of door kink structure, for the close coupling of device in cold conditions provides safeguard, door kink structure cooperates with the short-circuit plunger of rectangular waveguide, the energy coupling that can guarantee whole system before and after the plasma exciatiaon reaches higher efficient, can realize making microwave to go the mode of ripple attitude to the plasma energy supply under limiting case.
4. design of the present invention is fit to the microwave system of any frequency.
5. this device can be applicable to gas-phase chemical reaction (as: switching through of natural gas straight system ethene, acetylene, the purification of poisonous and harmful industrial waste gas etc.), chemical vapour deposition (CVD) (as the deposition of diamond film etc.), the processing of synthetic and processing of material (plasma as metal, ceramic particle is synthetic, the plasma cutting of material, boring etc.) and solid waste (as house refuse, nuke rubbish etc.).
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the physical dimension schematic diagram of each several part among Fig. 1.
Fig. 3 is the schematic equivalent circuit of Fig. 1.
Fig. 4 is the energy efficiency of microwave and the relation curve schematic diagram of short-circuit plunger and impedance matching adjusting device position.
Embodiment
Involved in the present invention to be a kind of high-power, the efficient microwave plasma excitation means, Fig. 1 is the structural representation of this device, comprise tunable coaxial resonant cavity 1, rectangular waveguide 2, establish waveguide/coaxial conversion equipment 12 in the described rectangular waveguide 2, described waveguide/coaxial conversion equipment 12 is turned round door that piece 121 and medium single line 122 fasten the up and down structure of twisting together for door, described waveguide/coaxial conversion equipment 12 closely contacts with rectangular waveguide 2 upper and lower surfaces respectively and is connected, described tunable coaxial resonant cavity 1 is by being positioned at waveguide both sides and epicoele 11 coaxial with waveguide/coaxial conversion equipment 12 about in the of 2, cavity of resorption 15, and waveguide/coaxial conversion equipment 12 constitutes jointly, on, cavity of resorption is coaxial with outer conductor 13 and inner wire 14, inner wire 14 1 ends are plugged in cavity of resorption 15, the other end runs through medium single line 122 successively, door is turned round piece 121, epicoele 11, be provided with resonant cavity short-circuit plunger 111 along axis direction between the internal and external conductor of epicoele 11, described rectangular waveguide 2 one sides are provided with microwave source, and another side is provided with waveguide short piston 21 and carries out the impedance matching adjusting.
Fig. 2 is the physical dimension mark schematic diagram of each several part among Fig. 1.Wherein L1 is that inner wire 14 is plugged in the length in the cavity of resorption 15, L2 is the spacing of resonant cavity short-circuit plunger 111 to waveguide 2 upper surfaces, L3 is the centre-to-centre spacing of waveguide short piston 21 to inner wire 14, L4 is that medium single line 122 is along the plasmatorch axial length, L5 turns round piece 121 thickness for door, D0 is inner wire 14 external diameters, and D1 is medium single line 122 external diameters.
Fig. 3 is the equivalent electric circuit of this device, promptly tunable coaxial resonant cavity/waveguide quadrature coupling plasma torch equivalent electric circuit.G wherein
R1Be the open end of tunable coaxial resonant cavity 1, by the radiation conductance that the circle cut-off waveguide surrounds, G when not discharging
R2Very little, after strengthening, discharge progressively increases; G
R2It is radiation conductance to the rear portion waveguide; G
pBe that plasma electrically after plasma causes is led, along with plasma strengthens and increases; JX
pBe the plasma reactance after plasma causes, along with plasma strengthens and increases; JZ
01Cot β l
1It is the reactance amount of tunable coaxial resonant cavity 1 open end; JZ
02Tan β l
2It is the reactance amount of resonant cavity short-circuit plunger end; JZ
0Tan β
wl
3Be the reactance of waveguide short piston 21 in waveguide; JX
DIt is a reactance that the kink structure presents in waveguide 2; Rr is the impedance of back Wave guide system; Label 3 is a microwave source, and label 4 is the coupled structure of tunable coaxial resonant cavity, and label 5 is the coupled structure of back Wave guide system, Closing Switch K, and expression has produced discharge, forms and strengthen plasma;
Exciting of plasma is by forming the resonance with certain quality factor in the tunable coaxial resonant cavity 1, at the terminal plasma that causes of the open circuit of tunable coaxial resonant cavity 1, the resonance frequency of tunable coaxial resonant cavity 1 can be regulated by the position (changing L3) of resonant cavity short-circuit plunger 111, regulating resonant cavity short-circuit plunger 111 before causing plasma makes the resonance frequency of tunable coaxial resonant cavity 1 identical with the frequency of microwave power supply, after the plasma generation, the resonance frequency of cavity must be drifted about, the size of frequency drift is relevant with the plasma state state in the cavity, can make the resonance frequency of tunable coaxial resonant cavity 1 consistent with supply frequency all the time according to the state real-time tracking of plasma by resonant cavity short-circuit plunger 111.
The microwave energy of tunable coaxial resonant cavity 1 is by running through waveguide 2 middle positions, and the extension inner wire that stands on the outer conductor 13 obtains to pick up electromotive force in rectangular waveguide 2, on inner wire 14, set up induced current, thereby encouraged power delivery in the tunable coaxial resonant cavity 1.In order to realize the isolation of working gas and outside air, utilize low-loss dielectric material and tunable coaxial resonant cavity to constitute medium single line 122, medium single line 122 is key structure unit of this structural design, it has the effect of following several respects:
(1) energy of bearing from waveguide to tunable coaxial resonant cavity 1 is coupled;
(2) constitute tunable coaxial resonant cavity 1 with upper and lower chamber;
(3) can utilize it to carry out the sealing of gas.
Size (the D1 of medium single line, L4) select and employed microwave frequency (f), impedance (Z) designs of kind of dielectric material (ε) and tunable coaxial resonant cavity 1 etc. are relevant, the principle of design is to guarantee that the medium single line equals the 0.25n (n=1 of microwave source 3 operation wavelengths along plasmatorch axial length L 4,2,3, ... .) doubly, the medium internal diameter of medium single line 122 is identical with inner wire 14 diameters of tunable coaxial resonant cavity 1, the selection of overall diameter D1 is to keep the impedance phase coupling of impedance and tunable coaxial resonant cavity 1, and the degree of coupling of waveguide and coaxial system is relevant with the span of medium single line 122 in waveguide.
The main effect that door is turned round piece 121 is the controlled microwave system reduces rectangular waveguide/tunable coaxial resonant cavity under the cold conditions situation the degree of coupling, be convenient to set up the needs of the needed high electric field strength of plasma exciatiaon, the thickness L5 that door is turned round piece 121 equals the length that waveguide 2 narrow limit sizes deduct medium single line 122 according to the size Selection on the narrow limit of the length of medium single line 122 and waveguide 2 on the numerical value.
The effect of waveguide short piston 21 is impedance matchings of regulating system cold conditions and hot (before and after the plasma generation).In door kink structure, the theory coupling amount of the span decision waveguide/coaxial coupling of medium single line in rectangular waveguide, but,, directly influence the efficient of waveguide/coaxial coupling before and after pdp body excites owing to the mismatch of impedance because the load impedance of system changes a lot.Adopt the adjusting of waveguide short piston can impedance after the reactance of waveguide segment, make the impedance before and after the plasma exciatiaon reach optimum Match, thus reach microwave energy all coupling give plasma.
In this structure, change waveguide short piston 21 positions, can change degree of conversion, just use this degree of conversion, can be used as a kind of method that changes the waveguide and the coaxial system degree of coupling.
If, change the degree of coupling to change the method for waveguide short piston 21 positions, change over the less degree of coupling and do not accomplish, can change the degree of coupling with the way of constraint medium single line span.
The operation principle of whole device is as follows: by waveguide/coaxial conversion equipment 12 microwave energy is coupled to the tunable coaxial resonant cavity 1 from rectangular waveguide 2 transmission systems, utilize suitable medium single line 122 length to reduce the coupling of cold conditions waveguide/coaxial conversion, make tunable coaxial resonant cavity 1 form necessary high Q resonance condition at the initial stage of causing, accumulation energy, and cause the discharge of working gas; Along with the continuation and the reinforcement of plasma, adjust because the drift of the resonance frequency that the existence of plasma causes makes the resonance frequency of tunable coaxial resonant cavity 1 consistent with the operating frequency of microwave source 3 by resonant cavity short-circuit plunger 111; The degree of coupling by the waveguide/coaxial conversion after the waveguide short piston 21 adjusting plasma generation makes system progressively be transformed into low Q resonance condition, and then is transformed into the operating state of capable ripple.Realize exciting and keeping of high-power, high efficiency plasma by this a series of adjustment process.
1. be the microwave of 2450MHz for operating frequency, when medium single line medium material adopted boron nitride, the key dimension of plasmatorch device was: D
0=17mm, D
1=57mm, L
1=165mm, L
4=37mm, L
5=17mm.
2. be the microwave of 915MHz for operating frequency, when medium single line medium material adopted boron nitride, the key dimension of plasmatorch device was: D
0=31mm, D
1=140mm, L
1=650mm, L
4=82mm, L
5=42mm.
3. be the microwave of 2450MHz for operating frequency, when medium single line medium material adopted aluminium oxide, the key dimension of plasmatorch device was: D
0=17mm, D
1=35mm, L
1=165mm, L
4=28mm, L
5=27mm.
4. be the microwave of 2450MHz for operating frequency, when medium single line medium material adopted polytetrafluoroethylene, the key dimension of plasmatorch device was: D
0=17mm, D
1=63mm, L
1=165mm, L
4=42mm, L
5=12mm.
5. be the microwave of 2450MHz for operating frequency, when medium single line medium material adopted quartz, the key dimension of plasmatorch device was: D
0=17mm, D
1=52mm, L
1=165mm, L
4=40mm, L
5=15mm.
6. after microwave plasma excitated, adjust L
2And L
3Size, the variation of microwave energy coupling efficiency as shown in Figure 4, the microwave incident power is 1000～6000W (present embodiment is 4000W) in the experiment, the working gas medium is a hydrogen, utilizes reflection and incident microwave energy to calculate the microwave energy coupling efficiency.
Claims (9)
1. HIGH-POWERED MICROWAVES plasma torch, it is characterized in that: comprise tunable coaxial resonant cavity (1), rectangular waveguide (2), establish waveguide/coaxial conversion equipment (12) in the described rectangular waveguide (2), the structure of twisting together that described waveguide/coaxial conversion equipment (12) turns round for door that piece (121) and medium single line (122) fasten up and down, described waveguide/coaxial conversion equipment (12) closely contacts with rectangular waveguide (2) upper and lower surface respectively and is connected, described tunable coaxial resonant cavity (1) is by being positioned at waveguide (2) both sides and the epicoele (11) coaxial with waveguide/coaxial conversion equipment (12) up and down, cavity of resorption (15), and the common formation of waveguide/coaxial conversion equipment (12), on, cavity of resorption is coaxial with outer conductor (13) and inner wire (14), inner wire (14) one ends are plugged in cavity of resorption (15), the other end runs through medium single line (122) successively, door is turned round piece (121), epicoele (11), be provided with resonant cavity short-circuit plunger (111) along axis direction between the internal and external conductor of epicoele (11), described rectangular waveguide (2) one sides are provided with microwave source, and another side is provided with waveguide short piston (21).
2. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 1, it is characterized in that: described medium single line (122) is made of inner wire (14) and its dielectric on every side, and the DIELECTRIC CONSTANT of dielectric material is less than or equal to 10.
3. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 2, it is characterized in that: described dielectric material is one of air, boron nitride, polytetrafluoroethylene, aluminium oxide, quartz or its complex.
4. according to claim 1 or 2 described HIGH-POWERED MICROWAVES plasma torchs, it is characterized in that: the frequency of described microwave source is 2450MHz, 915MHz or 314MHz.
5. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 4, it is characterized in that: the frequency of described microwave source is 2450MHz, and its medium single line (122) medium material adopts boron nitride, inner wire (14) outer diameter D
0=4～30mm, medium single line (122) outer diameter D
1=14～100mm, inner wire (14) is plugged in the length L in the cavity of resorption (15)
1=30～300mm, medium single line (122) is along the plasmatorch axial length L
4=20～54.6mm, door is turned round piece (121) thickness L
5=0～34.6mm.
6. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 4, it is characterized in that: the frequency of described microwave source is 2450MHz, and its medium single line (122) medium material adopts aluminium oxide, inner wire (14) outer diameter D
0=4～30mm, medium single line (122) outer diameter D
1=10～60mm, inner wire (14) is plugged in the length L in the cavity of resorption (15)
1=30～300mm, medium single line (122) is along the plasmatorch axial length L
4=15～40mm, door is turned round piece (121) thickness L
5=14～40mm.
7. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 4, it is characterized in that: the frequency of described microwave source is 2450MHz, and its medium single line (122) medium material adopts polytetrafluoroethylene, inner wire (14) outer diameter D
0=4～30mm, medium single line (122) outer diameter D
1=18～108mm, inner wire (14) is plugged in the length L in the cavity of resorption (15)
1=30～300mm, medium single line (122) is along the plasmatorch axial length L
4=30～54.6mm, door is turned round piece (121) thickness L
5=0～24.6mm.
8. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 4, it is characterized in that: the frequency of described microwave source is 2450MHz, and its medium single line (122) medium material adopts quartzy, inner wire (14) outer diameter D
0=4～30mm, medium single line (122) outer diameter D
1=14～90mm, inner wire (14) is plugged in the length L in the cavity of resorption (15)
1=30～300mm, medium single line (122) is along the plasmatorch axial length L
4=25～54.6mm, door is turned round piece (121) thickness L
5=0～30mm.
9. according to the described HIGH-POWERED MICROWAVES plasma torch of claim 4, it is characterized in that: the frequency of described microwave source is 915MHz, and its medium single line (122) medium material adopts boron nitride, inner wire (14) outer diameter D
0=12～50mm, medium single line (122) outer diameter D
1=60～220mm, inner wire (14) is plugged in the length L in the cavity of resorption (15)
1=100～1200mm, medium single line (122) is along the plasmatorch axial length L
4=40～124mm, door is turned round piece (121) thickness L
5=0～84mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02144899 CN1207944C (en) | 2002-11-22 | 2002-11-22 | High power microwave plasma torch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02144899 CN1207944C (en) | 2002-11-22 | 2002-11-22 | High power microwave plasma torch |
Publications (2)
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| CN1503614A CN1503614A (en) | 2004-06-09 |
| CN1207944C true CN1207944C (en) | 2005-06-22 |
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| CN 02144899 Expired - Fee Related CN1207944C (en) | 2002-11-22 | 2002-11-22 | High power microwave plasma torch |
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| US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
| CN102291922B (en) * | 2011-07-22 | 2013-03-20 | 中国科学院空间科学与应用研究中心 | Ion generating device |
| CN102510654A (en) * | 2011-10-18 | 2012-06-20 | 大连理工大学 | Atmospheric-pulse-modulated microwave plasma generation device |
| CN103269559B (en) * | 2013-05-03 | 2016-04-20 | 大连海事大学 | A kind of enhancement mode microwave discharge in water plasma producing apparatus |
| CN105136749B (en) * | 2015-08-20 | 2017-12-22 | 浙江全世科技有限公司 | A kind of microwave plasma torch atomic emission spectrometer |
| CN106053956A (en) * | 2016-07-19 | 2016-10-26 | 电子科技大学 | Material dielectric constant testing system and testing method based on same |
| CN106099301B (en) * | 2016-07-19 | 2019-08-09 | 电子科技大学 | A kind of coaxial resonant cavity and its application |
| CN107863285B (en) * | 2017-11-01 | 2019-08-27 | 长江存储科技有限责任公司 | A kind of reactive ion etching method and equipment |
| CN108931538A (en) * | 2018-06-29 | 2018-12-04 | 中国科学院合肥物质科学研究院 | A kind of experimental provision for carrying out rock-boring research using microwave |
| CN110267425B (en) * | 2019-06-21 | 2020-08-25 | 电子科技大学 | Combined type double coaxial line atmospheric pressure low temperature microwave plasma jet source |
| CN111465161B (en) * | 2020-03-18 | 2023-06-02 | 苏州迈微能等离子科技有限公司 | Normal pressure self-ignition type microwave plasma torch and microwave plasma generation system |
| CN113382528A (en) * | 2021-05-21 | 2021-09-10 | 清华大学 | Electron linear accelerator |
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2002
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