CN107863285B - A kind of reactive ion etching method and equipment - Google Patents
A kind of reactive ion etching method and equipment Download PDFInfo
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- CN107863285B CN107863285B CN201711060051.3A CN201711060051A CN107863285B CN 107863285 B CN107863285 B CN 107863285B CN 201711060051 A CN201711060051 A CN 201711060051A CN 107863285 B CN107863285 B CN 107863285B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3347—Problems associated with etching bottom of holes or trenches
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Abstract
This application discloses a kind of reactive ion etching method and equipment.This method for the plasma of reactive ion etching is generated based on pulse laser induced mode, rather than what the mode based on radio frequency discharge generated.Because voltage it is certain in the case where, compared to radio frequency discharge, pulse laser focusing is easier inducing gas and generates plasma, and degree of ionization is higher, therefore, in the case where voltage is certain, compared to radio frequency discharge mode, the plasma density that pulse laser induced mode can generate is bigger, and the plasma initial kinetic energy of formation is bigger.Therefore, it can be conducive to improve reactive ion etching rate using pulse laser mode, be particularly conducive to the bottom etching of deep hole or deep trouth.Moreover, the plasma density and plasma initial kinetic energy because of generation are bigger, therefore, performed etching using the plasma which generates, be conducive to the selectivity for improving anisotropic etching, is conducive to improve etch topography.
Description
Technical field
This application involves reactive ion etching technology field more particularly to a kind of reactive ion etching method and equipment.
Background technique
Reactive ion etching method mainly pass through the living radical of directed movement in plasma to medium carry out physics and
Chemical reaction, to realize rapidly anisotropic etching.
Existing reactive plasma mainly includes with Types Below: inductively coupled plasma body (Inductively
Coupled Plasma, ICP), capacitance coupling plasma (Capacitively Coupled Plasma, CCP) and electronics
Cyclotron resonance plasma (Electron Cyclotron Resonance, ECR).The plasma of these types is to be based on
The plasma (Discharge Produced Plasma, DPP) that radio frequency discharge mode generates, plasma density is usual
It is 1010~1012cm-3。
It is living according to the etching mechanism of reactive ion it is found that the plasma density in reactive ion body etching process is bigger
Free love base is more, is more conducive to improve etch rate.And it is based on existing plasma producing method, if you need to further increase
Plasma density then needs higher discharge voltage, in this way, plasma generates the radio frequency power output of equipment, heat is born
The requirements such as lotus are higher, and equipment volume is bigger.
In addition, the plasma kinetic energy for the deep hole or deep etching of high-aspect-ratio, in conventional reactive ion etching
It is relatively small, it is difficult to reach deep hole or deep trouth bottom and continues quickly to etch downwards.
Summary of the invention
In view of this, this application provides a kind of reactive ion etching method and equipment, under conditions of voltage is certain,
Reactive ion etching rate is improved, and is suitable for the bottom etching of deep hole or deep trouth.
In order to solve the above-mentioned technical problem, the application adopts the technical scheme that
A kind of reactive ion etching method, comprising:
Substrate to be etched is put into reactive ion etching chamber；
Reaction gas is passed through into reactive ion etching chamber；
Using pulsed-laser-induced reactive method gas, plasma is generated；
The direction of motion for adjusting plasma keeps the direction of motion of plasma consistent and keeps the direction of motion of plasma vertical
In substrate surface direction to be etched；
Reactive ion etching is carried out to substrate to be etched using plasma.
Optionally, the direction of motion of the adjustment plasma, specifically: the direction of motion for collimating plasma makes
The direction of motion of plasma is consistent.
Optionally, it is described adjustment plasma the direction of motion, further includes: collimation plasma the direction of motion it
Before, filter out the plasma along direction of laser propagation expansion.
Optionally, after the direction of motion of the collimation plasma, before carrying out reactive ion etching to substrate to be etched,
Further include:
The emittance area for adjusting plasma, so that the etching surface face of the emittance area of plasma and substrate to be etched
Product is adapted.
Optionally, when the etch areas surface area of substrate to be etched is greater than the emittance area of plasma, the method
Further include:
The mobile substrate to be etched of step-by-step movement, makes the surface to be etched of substrate to be etched gradually by plasma etching.
Optionally, the reaction gas contains CF4、CH2F2、C4F6、C4F8、NH3、SF6、Cl2And O2One of or it is a variety of
Gas.
A kind of reactive ion etching equipment, comprising:
Pulsed laser source, condenser lens, reaction gas nozzle and plasma motion direction adjust component；
Wherein, pulsed laser source is for generating pulse laser；
The reaction that condenser lens is used to that the pulse laser focusing generated by pulsed laser source to be made to spray to reaction gas nozzle
On gas；
Plasma motion direction adjustment component makes plasma motion direction one for adjusting plasma motion direction
It causes and makes the direction of motion of plasma perpendicular to substrate surface direction to be etched.
Optionally, the pulsed laser source, condenser lens, reaction gas nozzle and plasma motion direction adjust component
Axis overlapping.
Optionally, the plasma motion direction adjustment component includes: ion deflecting magnetic lenses, for collimating plasma
The direction of motion of body keeps the direction of motion of plasma consistent.
Optionally, the plasma motion direction adjustment component further includes the first ion fence, the first ion grid
Column be used for ion deflecting magnetic lenses collimation plasma the direction of motion before, filter out along direction of laser propagation expansion etc.
Gas ions.
Optionally, the reactive ion etching equipment further include: the second ion fence, after adjusting direction of motion collimation
Plasma emittance area.
Optionally, the reactive ion etching equipment further include: control the mobile component of substrate step-by-step movement to be etched.
Compared to the prior art, the application has the advantages that
Based on above technical scheme it is found that in reactive ion etching method provided by the present application, carved for reactive ion
The plasma of erosion is generated based on pulse laser induced mode, rather than what the mode based on radio frequency discharge generated.Cause
In the case that voltage is certain, radio frequency discharge is compared, pulse laser focusing is easier inducing gas and generates plasma, and ionizes journey
Du Genggao, therefore, in the case where voltage is certain, compared to radio frequency discharge mode, what pulse laser induced mode can generate
Plasma density is bigger, and the plasma initial kinetic energy of formation is bigger.Therefore, can be conducive to mention using pulse laser mode
High reactive ion etching rate is particularly conducive to the bottom etching of deep hole or deep trouth.Moreover, because generation plasma density and
Plasma initial kinetic energy is bigger, therefore, is performed etching using the plasma which generates, and is conducive to improve anisotropy
The selectivity of etching is conducive to improve etch topography.
Detailed description of the invention
In order to which the specific embodiment of the application is expressly understood, used when the application specific embodiment is described below
Attached drawing do a brief description.
Fig. 1 is the operation principle schematic diagram of reactive ion etching equipment provided by the embodiments of the present application；
Fig. 2 is reactive ion etching method flow diagram provided by the embodiments of the present application.
Appended drawing reference:
100: reactive ion etching equipment,
11: pulsed laser source,
12: condenser lens,
13: reaction gas nozzle,
14: ion deflecting magnetic lenses,
15: the first ion fence,
16: the second ion fence,
20: Cathode plasma explosion region,
30: substrate to be etched.
Specific embodiment
The specific embodiment of the application is described in detail with reference to the accompanying drawing.
The specific of the reactive ion etching equipment for realizing reactive ion etching method provided by the present application is introduced first
Embodiment.
Referring to Figure 1.The reactive ion etching equipment 100 includes: pulsed laser source 11, condenser lens 12, reaction gas
Nozzle 13 and ion deflecting magnetic lenses 14.
Wherein, pulsed laser source 11 is for generating pulse laser；As one specific embodiment of the application, in order to improve reaction
The initial kinetic energy of the ionization degree of gas, the density of the plasma of generation and plasma, pulsed laser source 11 can be height
Frequency pulse laser source.As an example, the frequency of the pulsed laser source 11 can be greater than 10kHz.As an example, the pulsed laser source
11 can be high frequency ps pulsed laser and ns pulsed laser source, be based on the high frequency ps pulsed laser and ns pulsed laser source, the pulse laser of generation can be nanosecond
Pulse laser.In general, the plasma density that nanometer pulsed-laser-induced reactive method gas generates can achieve 1012~1019cm-3。
Condenser lens 12 is for spraying the pulse laser focusing generated by pulsed laser source 11 to reaction gas nozzle 13
Reaction gas on, so that reaction gas is occurred ionization under the action of pulse laser, generate plasma.In this way, condenser lens
12 focal point forms Cathode plasma explosion region.
Reaction gas nozzle 13 and the reservoir for holding reaction gas.As an example, in order to improve the reaction gas of ejection
The uniformity that body is distributed above the etch areas of substrate to be etched, the reaction gas nozzle 13 can be annular gas nozzle.
In the embodiment of the present application, reaction gas can contain CF4、CH2F2、C4F6、C4F8、NH3、SF6、Cl2And O2One of or it is more
Kind gas.In addition, a certain proportion of inert gas such as Ar and He etc. can also be mixed with, in reaction gas to improve reaction
The diffusivity of gas.
In the embodiment of the present application, the pulse laser that pulsed laser source 11 generates along reaction gas nozzle center normal incidence,
And reaction gas induced reaction gas below reaction gas nozzle is made to generate plasma.
Because the plasma that reaction gas generates under the action of pulse laser be it is isotropic, in order to realize reaction from
The anisotropy of son etching, needs to adjust the direction of motion of plasma.Based on this, in order to realize the movement side of plasma
To adjustment, reactive ion etching equipment provided by the embodiments of the present application further include:
Ion deflecting magnetic lenses 14, the ion deflecting magnetic lenses 14 are used to collimate the direction of motion of plasma, make etc. from
The direction of motion of daughter is consistent.That is, ion deflecting magnetic lenses 14 is for moving plasma in the same direction.Into one
Step ground, ion deflecting magnetic lenses 14 can also make the direction of motion via the plasma of ion deflecting magnetic lenses 14 perpendicular to
Etch the etching surface of substrate.
As the specific example of the application, in order to preferably make ion deflecting magnetic lenses 14 faster, preferably collimation etc.
The direction of motion of gas ions, reactive ion etching equipment provided by the embodiments of the present application can also include:
First ion fence 15, the first ion fence 15 are used to collimate the fortune of plasma in ion deflecting magnetic lenses 14
Before dynamic direction, the plasma along direction of laser propagation expansion is filtered out, and the plasma expanded along other directions is isolated.
Because the first ion fence 15 in advance gets rid of the plasma expanded along other directions, therefore, 14 energy of ion deflecting magnetic lenses
Enough collimations that plasma motion direction can be completed in a relatively short period of time, thus, the setting of the first ion fence 15, favorably
In the efficiency for improving the collimation of ion deflecting magnetic lenses 15 plasma motion direction.
When reactive ion etching equipment provided by the embodiments of the present application includes the first ion fence 15, ion deflecting magnetic is saturating
The plasma that mirror 14 collimates is via the plasma after the screening of the first ion fence 15.
It is to be appreciated that in the embodiment of the present application, ion deflecting magnetic lenses 14 and the first ion fence 15 are only plasmas
One example of body direction of motion adjustment component.It should be appreciated that the component for adjusting plasma motion direction is not limited to this
Ion deflecting magnetic lenses 14 and the first ion fence 15 can also can adjust plasma motion side including other types of
To component.
In addition, when the etching surface area of substrate to be etched is smaller, in order to enable the emittance area of plasma with to
The etching surface area for etching substrate is adapted, and reactive ion etching equipment provided by the embodiments of the present application can also include second
Ion fence 16.The second ion fence 16 is used for after the direction of motion that ion deflecting magnetic lenses 14 collimates plasma,
The emittance area for adjusting plasma is adapted the area in itself and the region to be etched of substrate to be etched.It is adjusted it is equal from
The emittance area of daughter can be square millimeter magnitude.
From the foregoing, it will be observed that by above-mentioned first ion fence 14, ion deflecting magnetic lenses 15 and the second ion fence 16
Effect can make the direction of motion of the plasma projected via the second ion fence 16 consistent, and perpendicular to base to be etched
The etching surface of piece, and enable to the emittance area and substrate to be etched of the plasma projected from the second ion fence 16
Region to be etched area be adapted.
In order to simplify the structure of reactive ion etching equipment, above-mentioned pulsed laser source 11, condenser lens 12, reaction gas spray
Mouth 13 and ion deflecting magnetic lenses 14, the first ion fence 15 and the second ion fence 16 can be coaxially disposed.I.e. pulse swashs
Light source 11, condenser lens 12, reaction gas nozzle 13 and ion deflecting magnetic lenses 14, the first ion fence 15 and the second ion
The axis of fence 16 is overlapped, and the axis of above-mentioned each component is same axis.
In addition, be once only capable of generating plasma in little space because in the way of plasma generation with laser,
Therefore, the plasma of pulse laser induced generation is only capable of performing etching the region to be etched of very little area, if base to be etched
When the etching surface area of piece is larger, such as 8 inch wafers, 12 inch wafers, need gradually to the different zones of substrate to be etched into
Row etching is just able to achieve.Based on this, reactive ion etching equipment provided by the embodiments of the present application can also include: that control is to be etched
The mobile component (not shown in figure 1) of substrate step-by-step movement.The mobile component of control substrate step-by-step movement to be etched can control to
It is mobile to etch substrate step-by-step movement in etching process, to realize the etching to full wafer substrate to be etched.Control base to be etched
The mobile mode of piece step-by-step movement is identical as the stepper progress mode of photoetching process.
In addition, in the embodiment of the present application, the working environment of reactive ion etching equipment is vacuum environment.
The working principle of reactive ion etching equipment described in above-described embodiment is as shown in Figure 1, its is specific as follows:
Pulsed laser source 11 generates pulse laser, after pulse laser is focused via condenser lens 12, by pulse laser focusing
To 13 lower space of gas nozzle, after reaction gas is sprayed via gas nozzle 13, laser energy direct ionization generation etc. is absorbed
Gas ions, and continue to absorb the plasma that laser energy forms high speed expansion within the pulse duration, to be sprayed in gas
13 lower zone of mouth forms Cathode plasma explosion region 20.The expanding plasma of generation is filtered out via the first ion fence 15
It is then, swollen along direction of laser propagation after 14 pairs of ion deflecting magnetic lenses screenings along the plasma of direction of laser propagation expansion
Swollen plasma carries out the collimation of the direction of motion, to keep the direction of motion of plasma consistent.Then, when plasma is transported
It moves to after the second ion fence 16, the emittance area of 16 plasma of the second ion fence is adjusted.Finally, plasma
It projects, is incident on the surface of substrate 30 to be etched from the second ion fence 16, physics is occurred with 30 surface of substrate to be etched, is changed
Effect, realizes the reactive ion etching to substrate 30 to be etched.
In the embodiment of the present application, it can be controlled by adjusting the throughput out of laser single-pulse energy and reaction gas
Make the density and kinetic energy of the plasma projected from the second ion fence 16.
Based on reactive ion etching equipment provided by the embodiments of the present application carry out reactive ion etching when, be used for react from
The plasma of son etching is to be generated based on pulse laser induced mode, rather than the mode based on radio frequency discharge generates
's.Because voltage it is certain in the case where, compare radio frequency discharge, pulse laser focusing be easier inducing gas generate plasma, and
Degree of ionization is higher, and therefore, in the case where voltage is certain, compared to radio frequency discharge mode, pulse laser induced mode can
The plasma density of generation is bigger, and the plasma initial kinetic energy of formation is bigger.Therefore, by the way of pulse laser induced
It can be conducive to improve reactive ion etching rate, be particularly conducive to the bottom etching of deep hole or deep trouth.Moreover, because generation etc.
Plasma density and plasma initial kinetic energy are bigger, therefore, are performed etching, are conducive to using the plasma which generates
The selectivity for improving anisotropic etching is conducive to improve etch topography.
The reactive ion etching equipment provided based on the above embodiment, the embodiment of the present application also provides a kind of reactive ions
Lithographic method.Referring specifically to following embodiment.
Fig. 2 is reactive ion etching method flow diagram provided by the embodiments of the present application.As shown in Fig. 2, the reaction from
Sub- lithographic method includes:
S21: substrate to be etched is put into reactive ion etching chamber.
It is to be appreciated that in the embodiment of the present application, reactive ion etching process carries out in vacuum environment.Therefore, it reacts
Ion etching chamber is vacuum environment in etching process.
The bogey for carrying substrate to be etched, generally plummer are provided in reactive ion etching chamber.
Substrate to be etched can be put on the indoor bogey of reactive ion etching chamber by the embodiment of the present application by mechanical hand.
Preferable anisotropic etching is realized to substrate to be etched in order to realize, it is indoor to be placed on reactive ion etching chamber
The surface to be etched of substrate to be etched is opposite with the exit portal of plasma.
S22: reaction gas is passed through into reactive ion etching chamber.
It is passed through reaction gas into reactive ion etching chamber by reaction gas nozzle 13, which can contain
CF4、CH2F2、C4F6、C4F8、NH3、SF6、Cl2And O2One of or multiple gases.In addition, can also be mixed in reaction gas
There are a certain proportion of inert gas such as Ar and He etc., to improve the diffusivity of reaction gas.
S23: utilizing pulsed-laser-induced reactive method gas, generates plasma.
Pulsed laser source 11 generates pulse laser, and the pulse laser of the generation is via the focussing force of condenser lens 12
Afterwards, reaction gas is directly acted on, so that reactant gas molecules is absorbed laser energy direct ionization and forms plasma, and in pulse
Continue to absorb the plasma that laser energy forms high speed expansion in duration.
S24: the plasma along direction of laser propagation expansion is filtered out.
In order to preferably adjust the direction of motion of plasma, realizes preferable anisotropic etching, can use first
Ion fence 15 filters out the plasma along direction of laser propagation expansion, and the plasma expanded along other directions is isolated.
S25: collimating the direction of motion of plasma, keeps the direction of motion of plasma consistent and makes the direction of motion of plasma
Perpendicular to substrate surface direction to be etched.
In order to further adjust the direction of motion of plasma, better anisotropic etching, the embodiment of the present application are realized
Can use the direction of motion that ion deflecting magnetic lenses 14 collimates plasma, keep the direction of motion of plasma consistent and make etc. from
To be etched surface direction of the direction of motion of son perpendicular to substrate to be etched.
S26: the emittance area of plasma is adjusted.
In order to enable the etching surface of the emittance area of plasma and substrate to be etched product is adapted, the embodiment of the present application
It can use the emittance area of the second ion fence 16 adjustment plasma.
S27: reactive ion etching is carried out to substrate to be etched using plasma.
In order to realize reactive ion etching, better anisotropic etching, the embodiment of the present application be can use via first
The plasma of ion fence 15, ion deflecting magnetic lenses 14 and the second ion fence 16 to substrate to be etched reacted from
Son etching.
It is to be appreciated that in the embodiment of the present application, the direction of motion for the plasma that the second ion of reason fence 16 projects
Perpendicular to the surface direction to be etched of substrate to be etched, therefore, the plasma projected from the second ion fence 16 can be to be etched
It loses substrate and carries out anisotropic etching.Again because being taught by the density and initial kinetic energy of the plasma of pulse laser induced generation
It leads, therefore, the anisotropy of etching is preferable, and can relatively easily reach deep hole or deep trouth bottom and continue quick downwards
Etching.
The above are the specific embodiments of reactive ion etching method provided by the embodiments of the present application.In the specific embodiment party
In formula, using plasma be rather than the mode based on radio frequency discharge based on generating by the way of pulse laser induced
It generates.Because voltage it is certain in the case where, compare radio frequency discharge, pulse laser focusing be easier inducing gas generate plasma
Body, and degree of ionization is higher, therefore, in the case where voltage is certain, compared to radio frequency discharge mode, pulse laser induced mode
The plasma density that can be generated is bigger, and the plasma initial kinetic energy of formation is bigger.Therefore, using pulse laser mode energy
Enough be conducive to improve reactive ion etching rate, be particularly conducive to the bottom etching of deep hole or deep trouth.Moreover, because generation it is equal from
Daughter density and plasma initial kinetic energy are bigger, therefore, are performed etching using the plasma which generates, are conducive to mention
The selectivity of high anisotropy etching is conducive to improve etch topography.
Because in the way of plasma generation with laser, being once only capable of generating plasma in little space, therefore,
The plasma that pulsatile once induced with laser generates, is only capable of performing etching the region to be etched of very little area, if base to be etched
When the etching surface area of piece is larger, such as 8 inch wafers, 12 inch wafers, need by by gradually to substrate to be etched not
It performs etching with region and is just able to achieve.Another kind based on this, as reactive ion etching method provided by the embodiments of the present application
Specific implementation, on the basis of above-mentioned steps can with the following steps are included: the mobile substrate to be etched of step-by-step movement, make to
The region to be etched of substrate is etched gradually by plasma etching.
It is to be appreciated that in the embodiment of the present application, the mode of the mobile substrate to be etched of step-by-step movement and stepper
Step-by-step movement move mode is identical.
The above are the specific embodiments of the application.
Claims (8)
1. a kind of reactive ion etching method characterized by comprising
Substrate to be etched is put into reactive ion etching chamber；
Reaction gas is passed through into reactive ion etching chamber；
Using pulsed-laser-induced reactive method gas, plasma is generated；
Filter out the plasma along direction of laser propagation expansion；
The direction of motion for adjusting plasma, keep the direction of motion of plasma consistent and make the direction of motion of plasma perpendicular to
Etching substrate surface direction, the direction of motion of the adjustment plasma, specifically: the direction of motion for collimating plasma makes
The direction of motion of plasma is consistent；
Reactive ion etching is carried out to substrate to be etched using plasma.
2. the method according to claim 1, wherein it is described adjustment plasma the direction of motion after, to be etched
Erosion substrate carries out before reactive ion etching, further includes:
The emittance area for adjusting plasma, so that the etching surface area phase of the emittance area of plasma and substrate to be etched
It adapts to.
3. method according to claim 1 or 2, which is characterized in that when the etch areas surface area of substrate to be etched is greater than
When the emittance area of plasma, the method also includes:
The mobile substrate to be etched of step-by-step movement, makes the surface to be etched of substrate to be etched gradually by plasma etching.
4. method according to claim 1 or 2, which is characterized in that the reaction gas contains CF4、CH2F2、C4F6、C4F8、
NH3、SF6、Cl2And O2One of or multiple gases.
5. a kind of reactive ion etching equipment characterized by comprising
Pulsed laser source, condenser lens, reaction gas nozzle and plasma motion direction adjust component；
Wherein, pulsed laser source is for generating pulse laser；
The reaction gas that condenser lens is used to that the pulse laser focusing generated by pulsed laser source to be made to spray to reaction gas nozzle
On；
Plasma motion direction adjustment component for adjusting plasma motion direction, keep plasma motion direction consistent and
Make the direction of motion of plasma perpendicular to substrate surface direction to be etched；
The plasma motion direction adjustment component includes: ion deflecting magnetic lenses, for collimating the movement side of plasma
To keeping the direction of motion of plasma consistent；
It further include the first ion fence, the first ion fence is used for the movement in ion deflecting magnetic lenses collimation plasma
Before direction, the plasma along direction of laser propagation expansion is filtered out.
6. reactive ion etching equipment according to claim 5, which is characterized in that the pulsed laser source, condenser lens,
The axis overlapping of reaction gas nozzle and plasma motion direction adjustment component.
7. reactive ion etching equipment according to claim 5 or 6, which is characterized in that the reactive ion etching equipment
Further include: the second ion fence, for adjusting the emittance area of the plasma after the direction of motion collimates.
8. reactive ion etching equipment according to claim 5 or 6, which is characterized in that the reactive ion etching equipment
Further include: control the mobile component of substrate step-by-step movement to be etched.
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| CN109262147A (en) * | 2018-09-29 | 2019-01-25 | 北京工业大学 | A kind of Ceramic Reinforced MMCs pulse laser lithography method |
| CN109411321B (en) * | 2018-10-29 | 2021-02-12 | 中国船舶重工集团公司第七0七研究所 | Device and method applied to ion beam etching sputtering protection |
| JP7289046B2 (en) | 2021-11-02 | 2023-06-09 | 株式会社三友製作所 | Plasma processing apparatus, plasma processing method, and plasma processing method |
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| CN1503614A (en) * | 2002-11-22 | 2004-06-09 | 中国科学院金属研究所 | High power microwave plasma torch |
| CN101641646A (en) * | 2007-03-23 | 2010-02-03 | Asml荷兰有限公司 | Contamination prevention system, lithographic apparatus, radiation source and device manufacturing method |
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